CN103567130A - Method for controlling film thickness of adhesive coating layer on high-voltage diode chip - Google Patents
Method for controlling film thickness of adhesive coating layer on high-voltage diode chip Download PDFInfo
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- CN103567130A CN103567130A CN201310563935.6A CN201310563935A CN103567130A CN 103567130 A CN103567130 A CN 103567130A CN 201310563935 A CN201310563935 A CN 201310563935A CN 103567130 A CN103567130 A CN 103567130A
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- diode chip
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- voltage diode
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Abstract
The invention discloses a method for controlling the film thickness of an adhesive coating layer on a high-voltage diode chip, and relates to the field of electronic component production. After the sintered high-voltage diode chip is chemically cleaned and dried, the surface of a diode core is coated with a polyamide adhesive (adhesive coating) according to the technological requirement, then the high-voltage diode chip is placed in a ladder-type program control drying oven to be dried (polyamide adhesive passivation), one component is extracted from the dried production batch and placed on a testing table of a metallographic microscope, a coarse tuning rotary knob and a fine tuning rotary knob of the microscope are adjusted, the surface of a passivation layer and the surface of the chip are respectively positioned, and the film thickness of the passivation layer can be measured. The method for controlling the film thickness of the adhesive coating layer on the high-voltage diode chip has the advantages of being high in measuring accuracy and improving the yield of finished products.
Description
Technical field
The present invention relates to a kind of high-voltage diode die surfaces passivation layer film thickness monitoring and the measuring method in Electronic Components Manufacturing field.
Background technology
In semiconductor components and devices is produced, for high-voltage diode, at chip-lead-in wire assembling sintering, go forward side by side after line pipe wicking surface cleaning treatment, carry out gluing coating to tube core (chip) surface, tube core is protected to (protective layer is also called passivation layer).Chip surface protection is the important engineering that improves high tension apparatus electrical property; surface coating material is polyphosphazene polymer acid imide; gluing thickness has direct impact to device electrical performance and reliability; glue-line is too thin, and device passivation layer surface insulation intensity is lower, and surface breakdown easily occurs device in the course of the work; glue-line is too thick; device reverse breakdown characteristics is deteriorated, and reverse leakage current increases, and yield rate is reduced.Therefore be necessary chip surface passivation layer thickness to test, according to test result, go to adjust the viscosity of polyimides glue, thereby guarantee that die surfaces coating gluing thickness meets technological requirement, and uniformity is good.
Summary of the invention
The object of this invention is to provide a kind of film thickness monitoring of diode chip surface passivation layer and measuring method for diode production.
Its goal of the invention is the method for testing of seeking a kind of Measurement accuracy high-voltage diode chip surface passivation layer (gluing overlay) thickness, by controlling passivation layer thickness technological specification, improve the reverse breakdown characteristics of device, thereby be conducive to improve the reliability of product test yield rate and device.
The present invention seeks to be achieved through the following technical solutions:
1. a high-voltage diode chip upper glue layer film thickness monitoring method, is characterized in that: high-voltage diode chip gluing coating process step is as follows:
1) model of pressing diode chip for backlight unit is installed navigation mould, coating wheel, recycling round and the material alms bowl of dimension at gluing machine corresponding position;
2) open four heaters on gluing machine, Temperature Setting is followed successively by: 75 ℃ of the first order, 60 ℃ of the second level, 50 ℃ of the third level, 60 ℃ of the fourth stages;
3) gluing machine line speed is 6.0 ~ 6.5 meter per seconds, in material alms bowl, adds appropriate polyamide glue coating;
4) by diode chip for backlight unit-lead-in wire sintered component that gluing to be applied is housed by moving on to gluing machine top work top in nitrogen Storage Cabinets, diode chip for backlight unit is contained in mould, every batch of ten moulds;
5) upper glue process indoor temperature is set as 25 ± 5 ℃, and humidity is≤39%;
6) part mold that gluing to be applied is housed is placed on comb bin, with saw blade mould by be processed one by one, by under mould order comb, be put on gluing machine conveyer belt, regulate the width of navigation mould, coating wheel, recycling round, highly, speed, the diode chip for backlight unit of gluing to be applied occupy coating wheel recycling round central authorities;
7) aluminium box is placed on coating machine end workbench, moves down the diode chip for backlight unit-lead-in wire sintered component being coated with on conveyer belt, put into aluminium box, every aluminium box is filled after 18 saw blade moulds, and cover lid is put into N2 keeping car;
8), after mounted box finishes by the gross, with N2 keeping car, will make together with aluminium box and move into specially
In the program control drying box of staged, drying process standard:
80℃×1?h→110℃×（1±1/6）h→180℃×1.5?h
→260℃×10h；
9) from be coated with dried production criticize extraction one root part measure passivation film thickness,
Mensuration is clipped on the testboard that is placed in metallographic microscope on special fixture with parts;
10) thickness measure: the lamp switch of opening metallographic microscope
adjust microscope focal length coarse adjustment knob, make parts high-visible, regulate testboard left and right before and after specify screw, goods chip after gluing is placed on to the center line in the visual field, regulates microscope focal length fine tuning knob, make respectively painting layer surface, corresponding silicon chip surface consistent with the center line in field of microscope, write down two numerical value, it is poor is passivation film thickness measure numerical value; High-voltage diode chip gluing coating thickness technology controlling and process standard is 20 ~ 25 μ m.
The present invention has following beneficial effect:
1. certainty of measurement is high;
2. improve the qualification rate of finished product.
Accompanying drawing explanation
The high-voltage diode chip gluing schematic diagram of filming.
In figure: high-voltage diode chip 1 and gluing film layer 2.
The specific embodiment
Below in conjunction with accompanying drawing, content of the present invention is described further:
As shown be the high-voltage diode chip gluing schematic diagram of filming,
To carrying out die surfaces coating polyamide glue (gluing) through the dried sintering of Chemical cleaning high-voltage diode chip according to technological requirement, then be put in staged program-control baking oven and be dried (passivation of polyamide glue).From dried production is criticized, extraction one root part, is placed on the testboard of metallographic microscope, adjusts the coarse adjustment of microscope focal length, vernier knob, respectively passivation layer surface, chip surface is positioned, and can measure the thickness of passivation layer.
With metallographic microscope, can accurately measure the thickness of chip passivation layer, test number is accurate to 1 μ m, realize after the chip passivation film thickness method of testing of high-voltage diode, targetedly passivation film thickness is controlled, yield rate improves 8.2% more before this, and the crash rate of device reaches seven grades following (being originally six grades).
Claims (2)
1. a high-voltage diode chip upper glue layer film thickness monitoring method, is characterized in that: high-voltage diode chip gluing coating process step is as follows:
1) model of pressing diode chip for backlight unit is installed navigation mould, coating wheel, recycling round and the material alms bowl of dimension at gluing machine corresponding position;
2) open four heaters on gluing machine, Temperature Setting is followed successively by: 75 ℃ of the first order, 60 ℃ of the second level, 50 ℃ of the third level, 60 ℃ of the fourth stages;
3) gluing machine line speed is 6.0 ~ 6.5 meter per seconds, in material alms bowl, adds appropriate polyamide glue coating;
4) by diode chip for backlight unit-lead-in wire sintered component that gluing to be applied is housed by moving on to gluing machine top work top in nitrogen Storage Cabinets, parts are contained in mould of plastics, every batch of ten moulds;
5) upper glue process indoor temperature is set as 25 ± 5 ℃, and humidity is≤39%;
6) part mold that gluing to be applied is housed is placed on comb bin, with saw blade mould by be processed one by one, by under mould order comb, be put on gluing machine conveyer belt, regulate the width of navigation mould, coating wheel, recycling round, highly, speed, the diode chip for backlight unit of gluing to be applied occupy coating wheel recycling round central authorities;
7) aluminium box is placed on coating machine end workbench, moves down the diode chip for backlight unit-lead-in wire sintered component being coated with on conveyer belt, put into aluminium box, every aluminium box is filled after 18 saw blade moulds, and cover lid is put into N2 keeping car;
8), after mounted box finishes by the gross, with N2 keeping car, will make together with aluminium box and move into specially
In the program control drying box of staged, drying process standard:
80℃×1?h→110℃×（1±1/6）h→180℃×1.5?h
→260℃×10h；
From be coated with dried production criticize extraction one root part measure passivation film thickness,
Mensuration is clipped on the testboard that is placed in metallographic microscope on special fixture with parts;
Thickness measure: the lamp switch of opening metallographic microscope
adjust microscope focal length coarse adjustment knob, make parts high-visible, regulate testboard left and right before and after specify screw, goods chip after gluing is placed on to the center line in the visual field, regulates microscope focal length fine tuning knob, make respectively painting layer surface, corresponding silicon chip surface consistent with the center line in field of microscope, write down two numerical value, it is poor is passivation film thickness measure numerical value.
2. a high-voltage diode chip upper glue layer film thickness monitoring method, is characterized in that: high-voltage diode chip gluing coating thickness technology controlling and process standard is 20 ~ 25 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310563935.6A CN103567130B (en) | 2013-11-14 | 2013-11-14 | Method for controlling film thickness of adhesive coating layer on high-voltage diode chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310563935.6A CN103567130B (en) | 2013-11-14 | 2013-11-14 | Method for controlling film thickness of adhesive coating layer on high-voltage diode chip |
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| CN103567130A true CN103567130A (en) | 2014-02-12 |
| CN103567130B CN103567130B (en) | 2015-07-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105043276A (en) * | 2015-07-15 | 2015-11-11 | 浙江华电器材检测研究所 | Layered thickness determination method of fiber composite mandrel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050263706A1 (en) * | 2004-05-25 | 2005-12-01 | Hyundai Heavy Industries Co., Ltd. | Method of measuring thickness of thin film using infrared thermal imaging system |
| CN101123284A (en) * | 2006-08-09 | 2008-02-13 | 刘胜 | Encapsulation method for high-brightness white light LED |
| CN101290958A (en) * | 2007-04-20 | 2008-10-22 | 亿光电子工业股份有限公司 | Encapsulation construction of light emitting diode |
| CN103311381A (en) * | 2012-03-13 | 2013-09-18 | 展晶科技(深圳)有限公司 | Production method for packaging structures of light-emitting diode |
-
2013
- 2013-11-14 CN CN201310563935.6A patent/CN103567130B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050263706A1 (en) * | 2004-05-25 | 2005-12-01 | Hyundai Heavy Industries Co., Ltd. | Method of measuring thickness of thin film using infrared thermal imaging system |
| CN101123284A (en) * | 2006-08-09 | 2008-02-13 | 刘胜 | Encapsulation method for high-brightness white light LED |
| CN101290958A (en) * | 2007-04-20 | 2008-10-22 | 亿光电子工业股份有限公司 | Encapsulation construction of light emitting diode |
| CN103311381A (en) * | 2012-03-13 | 2013-09-18 | 展晶科技(深圳)有限公司 | Production method for packaging structures of light-emitting diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105043276A (en) * | 2015-07-15 | 2015-11-11 | 浙江华电器材检测研究所 | Layered thickness determination method of fiber composite mandrel |
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Effective date of registration: 20210902 Address after: 226503 No. 82, Zhongshan West Road, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Jiangsu Gaoxin Electronics Co.,Ltd. Address before: 226502 No. 82, Zhongshan West Road, Rucheng, Rugao, Nantong, Jiangsu Patentee before: NANTONG GAOXIN ELECTRONICS Co.,Ltd. |