CN103579036B - The method for evaluating quality of the target assembly that the formation of the semiconductor layer film of thin-film transistor uses - Google Patents
The method for evaluating quality of the target assembly that the formation of the semiconductor layer film of thin-film transistor uses Download PDFInfo
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- CN103579036B CN103579036B CN201310300303.0A CN201310300303A CN103579036B CN 103579036 B CN103579036 B CN 103579036B CN 201310300303 A CN201310300303 A CN 201310300303A CN 103579036 B CN103579036 B CN 103579036B
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Abstract
The method for evaluating quality of the target assembly that the formation evaluating the semiconductor layer film of the thin-film transistor of the quality of target assembly simply uses.This evaluation method comprises: the first operation, prepares target assembly, and this target assembly configures multiple oxide target component with gap by vacating by bond material on backboard and forms; Second operation, sputters target assembly and forms film; 3rd operation, to the area illumination exciting light comprising the seam portion corresponding with the gap of target assembly and the microwave of film, after the maximum of the reflected wave from seam portion of the microwave changed in the irradiation be measured to according to exciting light, stop the irradiation of exciting light, the change of the reflectivity stopping the reflected wave from seam portion of the postradiation microwave of exciting light is measured, calculates until reflectivity becomes the life value τ 1 of time as the seam portion of film of 1/e; 4th operation, the quality based on life value τ 1 pair of target assembly of seam portion is evaluated.
Description
Technical field
This granting is bright relates to the method evaluated the quality of the target assembly that the formation of the semiconductor layer film of thin-film transistor (TFT) uses.Specifically, relate to when the quality (using this target assembly whether can form quality as the useful film of the semiconductor layer of TFT) to above-mentioned target assembly is evaluated, the TFT that even if unactual use sputtering target utilizes sputtering method to be made into by this film is located at semiconductor layer and specially evaluate its characteristic (degree of excursion, TFT characteristic), the life-span measuring this film by utilizing microwave photoconduction electric attenuation method also can simply and evaluate the quality of target assembly accurately.
Background technology
As noncrystalline (noncrystalline) film that the semiconductor layer of TFT is used, except general amorphous silicon (a-Si), nearest use such as comprises the oxide of at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn) etc.The oxide semiconductor thin-film oxide of the latter being used for the semiconductor layer of TFT not only has the characteristic of semiconductor of field-effect mobility (degree of excursion) more high excellence, due to can with film formation at low temp and also optical band gap larger, therefore, also having can to the advantage of plastic base, film substrate film forming etc.
When using such film as TFT semiconductor layer use, in order to obtain, mobility is higher, the film of TFT excellent, from the view point of boosting productivity, in the manufacturing process of display etc., the characteristic of the semiconductive thin film of film forming is evaluated, and by its result feedback, thus the management that adjustment manufacturing condition carries out film quality is very important.
As the evaluation method of the characteristic of semiconductive thin film in the past, usually on semiconductive thin film, form gate insulating film, passivation dielectric film after supplemantary electrode, the characteristic of mobility, threshold value etc. being measured, but in the assay method of contact-type needing supplemantary electrode, cost is used for time, the cost of supplemantary electrode.In addition, due to supplemantary electrode, thus there is the possibility producing new defect on semiconductive thin film, and from the view point of raising fabrication yield, also seek the establishment of the assay method of the non-contact type not needing supplemantary electrode.
In view of such situation, the applicant of the application proposes the evaluation method (patent documentation 1 and 2) evaluated based on the microwave photoconduction electric attenuation method employing laser and microwave (μ-PCD method) as the method evaluated with the characteristic of non-contact type to semiconductive thin film.Wherein, patent documentation 1 is in order to propose the crystallinity evaluation of the quasi-crystalline semiconductive thin films such as polysilicon, by to define above-mentioned quasi-crystalline semiconductive thin film test portion irradiating laser, the change with the reflectivity being irradiated the microwave that the excess carrier that encourage correspondingly change by this laser is measured, the crystallinity of semiconductive thin film is evaluated.
In addition, patent documentation 2 is the technology improved the technology of above-mentioned patent documentation 1 to evaluate the characteristic of amorphous oxide semiconductor thin-film, sets the illuminate condition of the exciting light being suitable for this oxide semiconductor thin-film.Specifically, the relation of the characteristic of oxide semiconductor thin-film and the measurement result in life-span is carefully studied, result draws following opinion: the mobility of (a) oxide semiconductor thin-film and life value (1/e of reflectivity change) have higher dependency relation, life value can be evaluated the mobility of oxide semiconductor thin-film simply by inquiry, and the mobility of (b) oxide semiconductor thin-film and the peak value of reflectivity have higher dependency relation, peak value is investigated by replacing life value, also can evaluate the mobility of oxide semiconductor thin-film simply.Based on these opinions, Patent Document 2 discloses following method: (a) irradiates exciting light and microwave to the test portion being formed with oxide semiconductor thin-film, detect the illumination variations according to exciting light microwave the reflected wave from oxide semiconductor thin-film maximum (peak value) after, stop the irradiation of exciting light, the change of the reflectivity stopping the reflected wave from oxide semiconductor thin-film of the postradiation microwave of exciting light is measured, life value (1/e of reflectivity change) is calculated according to the value determined, thus judge the mobility of oxide semiconductor thin-film, and (b) irradiates exciting light and microwave to the test portion being formed with oxide semiconductor thin-film, the maximum (peak value) of the reflected wave from oxide semiconductor thin-film of the microwave of the illumination variations according to exciting light is measured, thus judge the mobility of oxide semiconductor thin-film.
On the other hand, when forming semiconductive thin film, the sputtering method that the sputtering target with this film same composition is sputtered preferably is used.In sputtering method, while import the inactive gass such as Ar gas while to applying high voltage between substrate and target structure in vacuum, Ionized inactive gas and target structure are collided, the constitute of the target structure of upspringing because of this collision is piled up on substrate and forms film.The film utilizing sputtering method to be formed is compared with the film utilizing ion plating method, vacuum vapour deposition, e-beam evaporation to be formed, and the one-tenth with face direction (face in) is grouped into, the inner evenness of thickness etc. is excellent, can be formed and advantage that film that sputtering target identical component forms is such.
The sputtering target that sputtering method uses uses generally be engaged in the state on the backboard (supporting mass) of metal member at use bond material under, and such sputtering target is also referred to as target conjugant.The Cu of the general thermal endurance of backboard, conductivity, heat conductivity excellence, uses with the form of fine copper or copper alloy.As bond material, interchangeable heat conductibility and the good low melting point soldering tin material (such as the material of In system, Sn system) of conductivity.
In recent years, utilize sputtering method to large substrate film forming need increase, the size of sputtering target also maximizes thereupon.Also there is according to sputtering target is different the situation being difficult to maximize, therefore, as shown in Fig. 1, Fig. 2 described later, be used on a backboard and vacate the target structure arranging multiple small pieces with gap, the target assembly utilizing bond material target structure and backboard to be engaged.Contact due to the flexure of backboard each other in order to avoid adjacent target thus produce defect, when adjustment is configured to room temperature between adjacent target structure, occurring the gap of roughly 0.1 ~ 1.0mm.In addition, in order to avoid bond material spills from above-mentioned gap, the lining component (also referred to as copper coin) of banded sheet etc. of macromolecule heat-resistant sheet, conductive sheet, pure Cu or Cu alloy is also set at the dorsal part (in conjunction with side, the side relative with backboard) in above-mentioned gap usually.
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2008-191123 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2012-33857 publication
When manufacturing target assembly, as described above gap being set between multiple target structure, therefore can invading the inactive gas of ionization from this gap in sputtering.Its result, the backboard being configured at the Cu under target structure is also sputtered, and when being mixed into Cu in the semiconductive thin film formed, TFT characteristic reduces.That is, when using target assembly film forming semiconductive thin film, with the gap of each target structure corresponding with above-mentioned gap portion when manufacturing for cause, producing the mixing phenomena that Cu mixes in film, causing TFT characteristic to reduce.The reduction of TFT characteristic becomes the main cause of image inequality when making display, causes quality to be significantly deteriorated.When particularly not only backboard uses Cu system, lining component also uses Cu, the mixing phenomena of Cu more significantly, therefore, not preferably.
In the past, when the reduction of the TFT characteristic that the clearance portion judged when being manufactured by such target assembly causes, if unactual use target assembly forms semiconductive thin film, makes TFT to semiconductive thin film supplemantary electrode, can not evaluate, but when being judged to be bad after making TFT, need again to make target assembly from the beginning, cause productivity ratio and cost significantly to reduce.
Summary of the invention
The present invention makes in view of the foregoing, its object is to be provided in quality to target assembly (use this target assembly whether can film forming as the quality of the useful film of the semiconductor layer of TFT) when evaluating, the TFT that even if unactual use sputtering target utilizes sputtering method to be made into by this film is located at semiconductor layer and specially evaluate its characteristic (mobility, TFT characteristic), also can simply and accurately to the method that the quality of target assembly is evaluated.
Will being intended to of the method that the quality of the target assembly that the formation that can realize the semiconductor layer film to thin-film transistor of the present invention of above-mentioned problem uses is evaluated, it comprises: the first operation, prepare target assembly, this target assembly configures multiple oxide target component with gap by vacating by bond material on backboard and forms; Second operation, sputters described target assembly and forms film; 3rd operation, to the area illumination exciting light comprising the seam portion A corresponding with the gap of described target assembly and the microwave of described film, after the maximum of the reflected wave from described seam portion A of the described microwave changed in the irradiation be measured to according to described exciting light, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described seam portion A of the postradiation described microwave of described exciting light is measured, calculates until reflectivity becomes the life value τ 1 of time as the described seam portion A of described film of 1/e; 4th operation, the quality based on life value τ 1 pair of target assembly of described seam portion A is evaluated.
In addition, achieve will being intended to of another target assembly method for evaluating quality of the present invention of above-mentioned problem, it comprises: the first operation, prepares target assembly, and this target assembly configures multiple oxide target component with gap by vacating by bond material on backboard and forms, second operation, sputters described target assembly and forms film, 3rd operation, to the area illumination exciting light comprising the seam portion A corresponding with the gap of described target assembly and the microwave of described film, after the maximum of the reflected wave from described seam portion A of the described microwave changed in the irradiation be measured to according to described exciting light, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described seam portion A of the postradiation described microwave of described exciting light is measured, calculates until reflectivity becomes the life value τ 1 of time as the described seam portion A of described film of 1/e, 5th operation, to the area illumination exciting light comprising the non-seam portion B corresponding with the non-gap portion of described target assembly and the microwave of described film, after the maximum of the reflected wave from described non-seam portion B of the described microwave changed in the irradiation be measured to according to described exciting light, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described non-seam portion B of the postradiation described microwave of described exciting light is measured, calculate until reflectivity becomes the life value τ 2 of time as the described non-seam portion B of described film of 1/e, 6th operation, evaluates based on the ratio of the life value τ 2 of the life value τ 1 of the described seam portion A of described film and the described non-seam portion B of described film and the quality of τ 1/ τ 2 pairs of target assemblies.
In the preferred embodiment of the present invention, above-mentioned film is sull.
Invention effect
The method for evaluating quality of target assembly of the present invention is not actually as in the past carry out TFT characteristic test to judge the quality of the quality of target assembly, but by measuring the quality of the quality judging target assembly to the life value of the semiconductive thin film utilizing target assembly film forming.Therefore, if use method of the present invention, the TFT that even if unactual use sputtering target utilizes sputtering method to be made into by this film is located at semiconductor layer and specially evaluate its characteristic (mobility, TFT characteristic), also can simply and accurately the quality of target assembly is evaluated.Its result, can shorten from during making target assembly to quality evaluation, can go far towards the shortening of development time, the raising of productivity ratio, the reduction etc. of cost.
It should be noted that, method of the present invention is useful as the method evaluated the quality of target assembly, but also useful as the method for evaluating quality of the film utilizing target assembly to be formed (corresponding with junction surface, in the film the jointed film of tool).Namely, according to method of the present invention, in the manufacturing line of liquid crystal indicator etc., can evaluate the electrical characteristics of the semiconductive thin film using target assembly film forming at short notice online, and can carry out in a non contact fashion, therefore, rate of finished products etc. can be improved and boost productivity, can simply and suitably carry out the quality evaluation of target assembly.
Accompanying drawing explanation
Fig. 1 is the vertical view of the structure representing target assembly.
Fig. 2 is that the A-A line of Fig. 1 amplifies longitudinal section.
Fig. 3 is the skeleton diagram of biometrics device.
Fig. 4 is the figure of the example representing the decay waveform obtained by biometrics.
Fig. 5 is the figure of the measurement result of the life value represented when to use target assembly 1 in Production Example 1.
Fig. 6 is the figure of the measurement result of the life value represented when to use target assembly 2 in Production Example 1.
Fig. 7 is the schematic diagram of the TFT component structure used in embodiment 1.
Fig. 8 is the I representing the TFT using target assembly 1 to be made in embodiment 1
d-V
gthe figure of characteristic.
Fig. 9 is the I representing the TFT using target assembly 2 to be made in embodiment 1
d-V
gthe figure of characteristic.
Symbol description
1: pulse laser (light source of exciting light); 2: microwave oscillator; 3: directivity colligator; 4: magic T (magicT); 5a: first wave conduit (signal waveguide); 5b: Second Wave conduit (reference waveguide); 6: frequency mixer; 7: signal processing apparatus; 8: computer; 9: workbench controller; 10: test portion platform; 11:X-Y workbench; 12: board holder; 13: speculum; 14: collector lens; 20: test portion substrate; 20a: film test portion; 20b: substrate; 21: target assembly; 22: sputtering target; 23: backboard; 24a ~ 24d: oxide target component; 25: lining component; 31a, 31b, 31c: low melting point scolding tin bond material; 32: separator; T: gap; Q: part immediately below the T of gap.
Embodiment
The present inventor is studied based on the microwave photoconduction electric attenuation method of patent documentation 1 and 2 record when evaluating the quality of target assembly simply.The life value that utilizes the method for patent documentation 2 to calculate (1/e of reflectivity change) has good dependency relation with the mobility of the semiconductive thin film of oxide semiconductor thin-film etc., become for TFT characteristic is evaluated indirectly and the good index of precision.On the other hand, in target assembly, clearance portion when manufacturing with this target assembly is as described above for cause, and larger change occurs TFT characteristic, therefore, the life value that the present inventor is conceived to the seam portion of the film corresponding with the clearance portion of target assembly is studied.Its result, the mobility of the life value (τ 1) having found the seam portion of the film corresponding with the clearance portion of target assembly and the semiconductive thin film of oxide semiconductor thin-film etc. and SS (SubthresholdSwing, subthreshold swing, drain current improve the grid voltage needed for 1) value, I
d-V
gthe TFT characteristics such as characteristic have good dependency relation, become the indirect and good index for evaluating TFT characteristic.And, find that the ratio (τ 1/ τ 2) of the life value (τ 2) of the life value (τ 1) of the seam portion of the film corresponding with the clearance portion of target assembly and the non-seam portion of the film corresponding with the non-gap portion of target assembly also has good dependency relation with the TFT characteristic such as mobility and SS value of the semiconductive thin film of oxide semiconductor thin-film etc., if use above-mentioned ratio, no matter then there is the advantage how material forming target assembly can carry out evaluating etc., thus complete the present invention.
Like this, characteristic of the present invention is to evaluate the quality of target assembly according to the life value (τ 1) of the seam portion of the film corresponding with the gap of target assembly.The calculation method of life value this be documented in patent documentation 2, can reference, but do not have completely about the record of target assembly in patent documentation 2, above-mentioned characteristic is not also recorded in patent documentation 2.Specifically, recommend the ratio (τ 1/ τ 2) of the life value (τ 2) of the non-seam portion of above-mentioned life value (τ 1) and the film corresponding with the non-gap portion of target assembly to use as the index being used for target assembly quality evaluation.
That is, the feature of the method for evaluating quality of target assembly of the present invention is to comprise: the first operation, prepares target assembly, and this target assembly configures multiple oxide target component with gap by vacating by bond material on backboard and forms; Second operation, sputters described target assembly and forms film; 3rd operation, to the area illumination exciting light comprising the seam portion A corresponding with the gap of described target assembly and the microwave of described film, after the maximum of the reflected wave from described seam portion A of the described microwave changed in the irradiation be measured to according to described exciting light, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described seam portion A of the postradiation described microwave of described exciting light is measured, calculates until reflectivity becomes the life value τ 1 of time as the described seam portion A of described film of 1/e; 4th operation, the quality according to life value τ 1 pair of target assembly of described seam portion A is evaluated (the first execution mode).
Above-mentioned defining carries out evaluating such characteristic of the present invention according to life value (τ 1) quality to target assembly of the seam portion of the film corresponding with the junction surface of target assembly, and the ratio (τ 1/ τ 2) particularly using the life value (τ 2) of the non-seam portion of life value (τ 1) and the film corresponding with the non-gap portion of target assembly calculated based on above-mentioned 3rd operation is effective as its index.At this, above-mentioned life value τ 2 can be calculated by the 5th operation, 5th operation is: to the area illumination exciting light comprising the non-seam portion B corresponding with the non-gap portion of described target assembly and the microwave of described film, be measured to the illumination variations according to described exciting light described microwave the reflected wave from described non-seam portion B maximum after, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described non-seam portion B of the postradiation described microwave of described exciting light is measured, calculate until reflectivity becomes the life value τ 2 (second execution mode) of time as the described non-seam portion B of described film of 1/e.
If as above-mentioned second execution mode useful life value ratio, no matter then how material can be evaluated the quality of target assembly.Namely, in the method only based on the life value τ 1 of seam portion A as above-mentioned first execution mode, different according to material, the value of usual τ 1 diminishes or becomes large on the contrary, therefore must by the threshold value of material pre research as qualified benchmark, on the other hand, if use above-mentioned ratio, then can obtain the index of the impact of the clearance portion representing target, therefore, not need by the threshold value of investigation of materials as qualified benchmark.
Below, each operation of the method for evaluating quality of the target assembly of first and second execution mode of the present invention is explained with reference to accompanying drawing.Fig. 1 is the vertical view of target assembly used in the present invention, and Fig. 2 is that the A-A line of Fig. 1 amplifies longitudinal section.But the target assembly of Fig. 1 and Fig. 2 is an example preferred embodiment of the present invention, and the present invention is never defined in this.Such as, in following figure, represent OBL sputtering target, but be not limited to this, such as, also can use discoid sputtering target.In addition, below use sull to illustrate, but be not limited to this, such as, also can use amorphous silicon membrane.
(1) about the first execution mode
(the first operation)
First, as shown in Figures 1 and 2, configure multiple oxide target component 24a ~ 24d on backboard 23 by bond material 31a ~ 31c target assembly 21 with vacating gap T is prepared.Target assembly 21 shown in Fig. 1 and Fig. 2 comprises: by 4 target structure 24a ~ 24d along respectively arranging two and the sputtering target 22 formed, the backboard 23 being used for fixing (supporting) this sputtering target 22 and the low melting point scolding tin bond material 31a ~ 31c engaged with backboard 3 by multiple target structure 24a ~ 24d all around.Lining component 25 is provided with in the mode blocking gap T at the dorsal part (low melting point scolding tin bond material 31a side) of the gap T of adjacent multiple target structure 24a ~ 24d.So that the mode configuration isolation part 32 (Cu line) in uniform gap can be formed between target structure 24a ~ 24d and backboard 23.
As target structure 24a ~ 24d, such as, enumerate the silicon such as amorphous silicon, polysilicon class and oxide.Preferred target structure is amorphous material.The thickness of above-mentioned film is preferably about roughly tens nm ~ 100nm.
As above-mentioned oxide, as long as the semiconductor layer of TFT is usually used, be not particularly limited, such as, use by from the amorphous oxide semiconductor be made up of the combination more than at least one selected in the group that In, Ga, Zn and Sn are formed.Specifically, In oxide, In-Sn oxide, In-Zn oxide, In-Sn-Zn oxide, In-Ga oxide, Zn-Ga oxide, In-Ga-Zn oxide, Zn oxide is such as enumerated.The ratio of each element is suitably determined according to the composition of the sull in the upper film forming of substrate (not shown in Fig. 1, Fig. 2).
Configure with vacating gap T between target structure 24a ~ 24d.The width of gap T preferably suitably sets according to the target structure used, the size of low melting point scolding tin bond material 31a ~ 31c and the size etc. of backboard 23, is preferably roughly 0.2mm ~ 1.0mm.
In Fig. 1 and Fig. 2, target structure 24a ~ 24d is made up of rectangular sheet material, but is not limited to this, also can be usually shape (such as discoid) used.In addition, thickness, the size of target structure 24a ~ 24d are also not particularly limited, and can select normally used thickness, size in the field of target assembly.
Backboard 23 is made up of pure Cu or the Cu alloy of thermal endurance, conductivity, heat conductivity excellence.As long as the backboard of Cu is normally used in the field of sputtering target, can use.
As low melting point scolding tin bond material 31a ~ 31c, enumerate In sill or Sn sill typically.Its kind is not particularly limited, as long as normally used in the field of sputtering target, can use.As In sill, such as, enumerate In-Ag alloy etc.As Sn sill, such as, enumerate Sn-Zn alloy etc.Preferably In sill.In fig. 2, symbol 31a ~ 31c can use identical or different low melting point scolding tin bond material, but when considering operating efficiency etc., preferably uses identical material.
Separator 32 configures in the mode that can form uniform gap between oxide target component 24a ~ 24d and backboard 23.As long as the component of separator conductivity, heat conductivity excellence, is not particularly limited, as long as normally used in the field of sputtering target, can use.As separator 12, such as, enumerate Cu line etc.It should be noted that, in Fig. 1 and Fig. 2, the separator being formed as ring-type is shown, but is not limited to this shape.
Gap in order to avoid bond material from each target structure spills, and the dorsal part (in conjunction with side, the side relative with backboard) of gap T is located at by lining component 25.As lining component 25, conductivity, heat conductivity are excellent, can be used in normally used component in the field of sputtering target.Specifically, as shown in Figure 2, lining component 25 is engaged by low melting point scolding tin bond material 31b with backboard 23, and lining component 25 is engaged by low melting point scolding tin bond material 31a with oxide target component 24a, 24b.Part Q immediately below the T of gap, low melting point scolding tin bond material 21 is not existed by clawing, and therefore, does not directly engage at lining component 25 via low melting point scolding tin bond material 31a with target structure 24a, 24b.
But in the present invention, at least at the dorsal part configuration lining component of gap T, the existence form of lining component is not limited to the form of Fig. 2.In addition, preferably there is not low melting point scolding tin bond material 31a in part Q immediately below the T of gap as illustrated in fig. 2, this be due to: when Q part exists low melting point scolding tin bond material, can be heated in sputtering, bond material stripping and produce paradoxical discharge, produces particulate, splash.When particularly bond material rises gradually along gap, such phenomenon becomes remarkable, therefore, in order to avoid this phenomenon, preferably immediately below part Q there is not bond material as far as possible.
(the second operation)
Then, above-mentioned target assembly sputtered and form film.Sputtering condition is not particularly limited, and selects suitable condition to form the film of expectation.
(the 3rd operation)
Then, to the area illumination exciting light comprising the seam portion A corresponding with the gap of target assembly and the microwave of above-mentioned film, be measured to the illumination variations according to described exciting light described microwave the reflected wave from described seam portion A maximum after, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described seam portion A of the postradiation described microwave of described exciting light is measured, calculates until reflectivity becomes the life value τ 1 of time as the described seam portion A of described film of 1/e.The invention is characterized in, to the area illumination exciting light and the microwave that comprise the seam portion A corresponding with the gap of target assembly, calculate the life value τ 1 of the seam portion A of film, the detailed computational methods of life value τ 1 are recorded in patent documentation 1, can with reference to patent documentation 1, therefore, in this manual, omit the explanation of detailed assay method, its outline is (following Fig. 3 and Fig. 4 is the figure extracted out from patent documentation 2) as described below.
Specifically, the biometrics device (identical with Fig. 1 that patent documentation 2 is recorded) using Fig. 3 to record irradiates exciting light and microwave to the measurement site of test portion (semiconductive thin film) 20a, detects the reflection intensity of wave from test portion of the microwave of the illumination variations according to this exciting light.The determinator of Fig. 3 possesses: pulse laser 1, microwave oscillator 2, directivity colligator 3, magic T (4), first wave conduit (signal waveguide) 5a, Second Wave conduit (reference waveguide) 5b, frequency mixer 6, signal processing apparatus 7, computer 8, workbench controller 9, test portion platform 10, X-Y table 11, board holder 12, speculum 13 and collector lens 14 etc.
The exciting light exported from pulse laser 1 to be reflected by speculum 13 and to be assembled by collector lens 14 (light concentrating components), by being located at the minute opening 5c of first wave conduit 5a, and irradiate the measurement site (such as the point of diameter about 5 ~ 10 μm) in film test portion 20a by the end (peristome) close with film test portion 20a of this first wave conduit 5a.Like this, the exciting light exported from pulse laser 1 is assembled and guides to film test portion 20a by speculum 13 and collector lens 14.Thus, stimulated carrier is produced at the small exciting light irradiation area (measurement site) of film test portion 20a.
As mentioned above, the carrier mobility of the crystalloid semiconductive thin film of oxide etc. and life value, charge carrier peak value (peak value of=reflectivity) have dependency relation, therefore, by calculating life value, peak value, evaluation can be carried out to the carrier mobility of oxide semiconductor thin-film simply and judging.
Fig. 4 (identical with Fig. 2 that patent documentation 2 is recorded) is the figure (curve represents carrier density) of the situation of the change of the excess carrier density representing microwave photoconduction electric attenuation method.The exciting light oxide semiconductive thin film of oxide semiconductor thin-film test portion irradiation is absorbed and generates excess carrier (stimulated carrier), increase along with excess carrier density increases its disappearance speed, when carrier injection speed is equal with disappearance speed, excess carrier density becomes constant peak value.And saturated and maintain constant value when the generation of these excess carrier is equal with the speed of disappearance, when stopping the irradiation of exciting light, due to the combining again of excess carrier, disappear, excess carrier reduce, and finally return the value before irradiating exciting light.
In the present invention, as said determination position, use the region comprising the seam portion A of the film corresponding with the gap of target assembly.The gap of target assembly is corresponding with the gap between target structure when manufacturing, and roughly has the width of 0.3 ~ 1.0mm.The width of the seam portion A of the film corresponding with above-mentioned gap is roughly 3.5 ~ 18.0mm, and recommendation comprises the region of this seam portion A at interior roughly 50.0mm × 20.0mm ~ 100.0mm × 60.0mm as measurement site.
In addition, the period of life value τ 1 measuring the seam portion A of film carries out after can forming semiconductive thin film on substrate in the same manner as patent documentation 2 immediately, also can carry out after above-mentioned semiconductive thin film is heat-treated utilizing such as oxygen, steam, or can carry out before formation passivation dielectric film, can measure after each operation.But, consider the evaluation of the target self except the impact of technique and shortening until time of evaluating, be recommended in after forming semiconductive thin film and measure life value τ 1 immediately.In addition, distribute in the face that also can be measured oxide semiconductor thin-film by the multiple points measured on base material.
(the 4th operation)
Then, the quality of life value τ 1 pair of target assembly of the seam portion A of based thin film is evaluated.The life value τ 1 that there is seam portion A is larger, possess the also higher tendency of the mobility of the TFT of the film using above-mentioned target assembly to obtain, therefore, the threshold value (correspondingly changing with target material) such as whether exceeding regulation by τ 1 can judge the quality of the quality of each target.
(2) about the second execution mode
In the first above-mentioned execution mode, the method that the quality describing life value τ 1 pair of target assembly of the seam portion A of based thin film is evaluated, but as recorded in the second execution mode, the ratio (τ 1/ τ 2) of the life value τ 2 of the life value τ 1 of the seam portion A of based thin film and the non-seam portion B of film also can be evaluated the quality of target assembly.In this second embodiment, the first ~ three operation is identical with the first execution mode, therefore, below the 5th operation and the 6th operation is described.
(the 5th operation)
At this, using the region comprising the non-seam portion B of the film corresponding with the non-gap portion of target assembly as measuring region, calculating the life value τ 2 of the non-seam portion B of film in the same manner as the 3rd operation.
At this, the non-gap portion of target assembly refers to the region beyond the gap T of target assembly, comprise the region of the non-seam portion B of the film corresponding with above-mentioned non-gap portion, specifically refer to the substantial middle of the part except seam, the part of approximate distance seam portion 20mm.
In addition, the period measuring the life value τ 2 of the non-seam portion B of film is identical with the situation of aforesaid life value τ 1, carry out immediately after can forming semiconductive thin film on substrate, also can carry out after above-mentioned semiconductive thin film is heat-treated utilizing such as oxygen, steam, or also can carry out before formation passivation dielectric film, can measure after each operation.But, consider the evaluation of the target self except the impact of technique and shortening until time of evaluating, be recommended in after forming semiconductive thin film and measure life value τ 2 immediately.
(the 6th operation)
Based on calculate via above-mentioned 3rd operation, the life value τ 1 of the seam portion A of film and calculate via above-mentioned 5th operation, the ratio (τ 1/ τ 2) of the life value τ 2 of the non-seam portion B of film evaluates the quality of target assembly.Such as, this is 1 refer to that the clearance portion of target does not have baneful influence completely than (τ 1/ τ 2), than for a lot of value less of 1, this refers to that the baneful influence of the clearance portion of target is larger.By using above-mentioned ratio, the impact that target material produces is excluded, therefore, utilize this than the value threshold value (not relying on target material) that whether exceedes regulation the quality of the quality of target assembly can be judged.
Method of the present invention relates to the method evaluated the quality of target assembly, but also useful as the method for evaluating quality of the film formed by above-mentioned target assembly (corresponding with the gap between target structure, film in the jointed film of tool).Therefore, by method of the present invention being applied to arbitrary operation of forming the manufacturing process after semiconductive thin film on substrate and evaluating the characteristic of the semiconductive thin film formed by target assembly, and by its result feedback, thus adjustment manufacturing condition can carry out the evaluation of film quality, therefore, the quality evaluation of semiconductive thin film can suitably be carried out.
Embodiment
Below, exemplify embodiment and further illustrate the present invention, but the present invention does not limit by following embodiment certainly, certainly also suitably can apply to implement with changing in the scope that can be applicable to aforementioned purport described later, they are all contained within the technical scope of the present invention.
First, manufacture target assembly 1 ~ 6 as described below, the life value of the oxide semiconductor thin-film using the target manufactured to be formed is measured.
(manufacture of target assembly 1)
Target assembly 1 (not process) manufactures as in the following manner.First, backboard is filled the bond material of In sill, being heated to more than fusing point becomes molten condition.Then, vacate multiple oxide target component that is arranged with gap together with separator, and cool.Target consists of InGaZnO
4(In: Ga: Zn=1: 1: 1, atom % than).Gap between target structure is 0.8mm.Do not use lining component.
(manufacture of target assembly 2)
Except the gap between target structure is this point of 0mm (gapless), manufacture target assembly 2 in the same manner as target assembly 1.
(manufacture of target assembly 3)
Except using, the angle on top, top is carried out, except the target structure of the chamfering of about 1mm, manufacturing target assembly 3 in the same manner as target assembly 1.
(manufacture of target assembly 4)
Target assembly 4 manufactures as described below.First, backboard is filled the bond material of In sill, being heated to more than fusing point becomes molten condition.Then, after configuring the lining component be made up of separator and pure Cu, vacate multiple oxide target component that is arranged with gap thereon, and cool.Target consists of InGaZnO
4(In: Ga: Zn=1: 1: 1, atom % than).Lining component is configured at suitable position, gap between target structure.Gap between target structure is 0.5mm.
(manufacture of target assembly 5)
Except using the lining component, the gap between target structure that are made up of polyimide film (Kapton) to be except 0.6mm, manufacture target assembly 5 in the same manner as target assembly 4.
(manufacture of target assembly 6)
Except using the lining component, the gap between target structure that are made up of Ni to be except 0.3mm, manufacture target assembly 6 in the same manner as target assembly 4.
(mensuration of film forming and life value)
On glass substrate (Corning Incorporated EAGLEXG, diameter 100mm × thickness 0.7mm), the target assembly 1 ~ 6 that use table 1 is recorded utilizes sputtering film-forming oxide semiconductor thin-film [IGZO (In: Ga: Zn: O (atom % than)=1: 1: 1: 4))] (thickness: 200nm) under following sputtering condition.
Substrate temperature: room temperature
Partial pressure of oxygen: O
2/ (Ar+O
2)=4%
After forming oxide semiconductor thin-film as described above, in order to improve film quality, at steam atmosphere (H
2o/O
2=50%) at 350 DEG C, carry out the pre-anneal treatment of 1 hour in.After pre-anneal treatment, (Japanese kobe steel section develops: LAT-1820SP) utilize the change of microwave photoconduction electric attenuation method to reflectivity to measure, and measures the life value τ 1 of seam portion of film and the life value τ 2 of the non-seam portion of film to use the device with the structure shown in Fig. 3 under the following conditions.
Optical maser wavelength: 349nm (ultraviolet light)
Pulse duration: 15ns
Pulse energy: 1 μ J/pulse
Beam diameter:
Umber of pulse=64 pulse measured for 1 time
Specifically, the line (position from the high order end of substrate near 100mm) for the non-seam portion of the seam portion and film that comprise film measures life value, measures the seam portion X of film
1life value τ 1 and the non-seam portion X of film
2(distance seam portion X
1point enough far away) life value τ 2, calculate their ratio (τ 1/ τ 2).At this, each life value measures immediately after preannealing.
The above results is shown in Table 1.
Table 1
Fig. 5 and Fig. 6 represents result when measuring when using target assembly 1 and target assembly 2, from the high order end of substrate to assigned position life value, for reference.X in figure
1the seam portion of film, X
2it is the non-seam portion of film.It should be noted that, in Fig. 5 (using target assembly 1), X
1=43mm, X
2=77mm.In Fig. 6 (using target assembly 2), X
1=41mm, X
2=58mm.Each value of target assembly other than the above is as shown below, for reference.
Target assembly 3:X
1=27, X
2=6
Target assembly 4:X
1=33, X
2=6
Target assembly 5:X
1=31, X
2=8
Target assembly 6:X
1=40, X
2=4
According to the above results, the quality of the target assembly 1 that the value of τ 1 or τ 1/ τ 2 is less is bad, and target assembly 2 ~ 6, the particularly quality of target assembly 2,6 that the value of τ 1 or τ 1/ τ 2 is larger are better.
(mensuration of TFT characteristic)
Then, in order to verify that whether above-mentioned evaluation appropriate, to use aforesaid target assembly 1,2 and 6 as described below construction drawing 7 record TFT time, transistor characteristic, mobility and SS value measure.
First, on glass substrate (Corning Incorporated EAGLEXG, diameter 100mm × thickness 0.7mm) successively film forming as the Mo film 100nm of gate electrode and gate insulating film SiO
2(200nm).Gate electrode uses the sputtering target of pure Mo to utilize DC sputtering method at film-forming temperature: film forming under the condition of room temperature, film forming power: 300W, carrier gases: Ar, gas pressure: 2mTorr.In addition, gate insulating film uses plasma CVD method in carrier gases: SiH
4and N
2the mist of O, film forming power: 100W, film-forming temperature: film forming under the condition of 300 DEG C.
Then, sull (thickness 40nm) is formed in the same manner as aforesaid Production Example.
After forming oxide semiconductor thin-film as described above, photoetching process and Wet-type etching is utilized to carry out pattern formation.As Wet-type etching liquid, use Northeast chemistry system " ITO-07N ".
After oxide semiconductor thin-film having been carried out to pattern and having been formed, in order to improve film quality, carry out pre-anneal treatment.Preannealing carries out 1 hour in steam atmosphere at 350 DEG C.In addition, utilize plasma CVD method film forming for the protection of the etch stop (100nm) of oxide semiconductor thin-film during source-drain electrode etching described later, carry out pattern formation by dry-etching.The condition of plasma CVD method is at formation SiO
2n is used during film
2o and SiH
4mist.Film forming power is 100W, and film-forming temperature is 230 DEG C, and the condition of dry-etching uses Ar, CHF
3mist, pressure is 6Pa, and power is 150W.
Then, pure Mo is used to form source-drain electrode.Specifically, same with aforesaid gate electrode utilize the pure Mo film of DC sputtering film-forming (thickness 100nm) after, utilize photoetching process and Wet-type etching to carry out pattern formation.Wet-type etching liquid is " AC101 ", relative to etchant stoste 1, dilutes with the pure water of the ratio of 0.75.Etch under liquid temperature is room temperature.The passage length of TFT is 10 μm, and channel width is 25 μm.In order to reliably carry out pattern formation, prevent short circuit, within the time being equivalent to 20%, add dipping (excessive erosion) in above-mentioned Wet-type etching liquid (AC101) relative to the thickness of source-drain electrode.
After so forming source-drain electrode, form the diaphragm for the protection of oxide semiconductor.As diaphragm, use SiO
2the stacked film (adding up to thickness 250nm) of (thickness 200nm) and SiN (thickness 150nm).Above-mentioned SiO
2and the formation of SiN uses Pehanorm agree system " PD-220NL " and use plasma CVD method to carry out.In the present embodiment, N is utilized
2o gas forms SiO after carrying out plasma treatment successively
2and SiN film.At formation SiO
2n is used during film
2o and SiH
4mist, formed SiN film time, use SiH
4, N
2, NH
3mist.Film forming power is 100W, and film-forming temperature is 150 DEG C.
Then, photoetching process and dry-etching is utilized to be formed on diaphragm for the contact hole of transistor characteristic evaluation inspection and are made into TFT.
About each TFT so obtained, obtain transistor characteristic (Drain current-Gate Voltage characteristic, I as described below
d-V
gcharacteristic), SS value and mobility (field-effect mobility μ FE).It should be noted that, target assembly 1,2 is carried out to the mensuration of transistor characteristic.
(1) mensuration of transistor characteristic
Transistor characteristic (I
d-V
gcharacteristic) use the semiconductor parameter analyzer of NationalInstruments Inc. " 4156C ".Detailed condition determination as shown below.
Source voltage: 0V
Drain voltage: 10V
Grid voltage :-30V ~ 30V (measuring interval: 1V)
(2) SS value
The minimum value making drain current increase the grid voltage needed for is SS value.
(3) mobility [mu] FE
Field-effect mobility μ FE according to TFT characteristic at V
g> V
d-V
thlinear areas derive.In linear areas, V
g, V
dbe respectively grid voltage, drain voltage, V
thfor drain current is more than voltage during 1nA, I
dfor drain current, L, W are respectively passage length, the channel width of TFT element, and Ci is the static capacity of gate insulating film, and μ FE is field-effect mobility.μ FE derives from following formula.In the present embodiment, according to the Drain current-Gate Voltage characteristic (I near the grid voltage meeting linear areas
d-V
gcharacteristic) tendency derive field-effect mobility μ FE.
Formula 1
The above results is shown in table 2 and Fig. 8 and Fig. 9.
Table 2
The TFT using the less target assembly 1 of the value of τ 1 and τ 1/ τ 2 to be made into as shown in Figure 8 transistor characteristic is deteriorated, and mobility as shown in table 2 also reduces, and SS value also uprises.
On the other hand, the TFT using the larger segmentation sputtering target 2,6 of the value of τ 1 and τ 1/ τ 2 to be made into shows good transistor characteristic as shown in Figure 9, and as shown in table 2, mobility is also higher, and SS value is also lower.
According to above result, by utilizing microwave photoconduction electric attenuation method to measure the life value of film, can simply and accurately judgements evaluation is carried out to the quality of target assembly.
Claims (3)
1. a method for evaluating quality for target assembly, the quality of the target assembly that the formation of the method to the semiconductor layer film of thin-film transistor uses is evaluated, and it is characterized in that, comprising:
First operation, prepares target assembly, and this target assembly configures multiple oxide target component with gap by vacating by bond material on backboard and forms;
Second operation, sputters described target assembly and forms film;
3rd operation, to the area illumination exciting light comprising the seam portion (A) corresponding with the gap of described target assembly and the microwave of described film, after the maximum of the reflected wave from described seam portion (A) of the described microwave changed in the irradiation be measured to according to described exciting light, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described seam portion (A) of the postradiation described microwave of described exciting light is measured, calculate until reflectivity becomes the life value τ 1 of time as the described seam portion (A) of described film of 1/e,
4th operation, the quality based on life value τ 1 pair of target assembly of described seam portion (A) is evaluated.
2. a method for evaluating quality for target assembly, the quality of the target assembly that the formation of the method to the semiconductor layer film of thin-film transistor uses is evaluated, and it is characterized in that, comprising:
First operation, prepares target assembly, and this target assembly configures multiple oxide target component with gap by vacating by bond material on backboard and forms;
Second operation, sputters described target assembly and forms film;
3rd operation, to the area illumination exciting light comprising the seam portion (A) corresponding with the gap of described target assembly and the microwave of described film, after the maximum of the reflected wave from described seam portion (A) of the described microwave changed in the irradiation be measured to according to described exciting light, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described seam portion (A) of the postradiation described microwave of described exciting light is measured, calculate until reflectivity becomes the life value τ 1 of time as the described seam portion (A) of described film of 1/e,
And, the method also comprises: to the area illumination exciting light comprising the non-seam portion (B) corresponding with the non-gap portion of described target assembly and the microwave of described film, after the maximum of the reflected wave from described non-seam portion (B) of the described microwave changed in the irradiation be measured to according to described exciting light, stop the irradiation of described exciting light, the change of the reflectivity stopping the reflected wave from described non-seam portion (B) of the postradiation described microwave of described exciting light is measured, calculate until reflectivity becomes the operation of time as the life value τ 2 of the described non-seam portion (B) of described film of 1/e, and
Based on the operation that the ratio of life value τ 2 and the quality of τ 1/ τ 2 pairs of target assemblies of the life value τ 1 of the described seam portion (A) of described film and the described non-seam portion (B) of described film are evaluated.
3. the method for evaluating quality of target assembly according to claim 1 and 2, is characterized in that,
Described film is sull.
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| JP2012162138A JP5759425B2 (en) | 2012-07-20 | 2012-07-20 | Quality evaluation method of target assembly used for forming thin film for semiconductor layer of thin film transistor |
| JP2012-162138 | 2012-07-20 |
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| JP6152348B2 (en) | 2013-01-11 | 2017-06-21 | 株式会社神戸製鋼所 | Evaluation method of oxide semiconductor thin film and quality control method of oxide semiconductor thin film |
| JP2016066788A (en) | 2014-09-19 | 2016-04-28 | 株式会社半導体エネルギー研究所 | Method of evaluating semiconductor film, and method of manufacturing semiconductor device |
| CN105154836A (en) * | 2015-09-18 | 2015-12-16 | 有研亿金新材料有限公司 | High-performance ferromagnetic sputtering target material |
| CN106884147A (en) * | 2017-03-22 | 2017-06-23 | 中山市博顿光电科技有限公司 | A kind of utilization rate ion gun sputtering target device high and its application method |
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| CN101681928A (en) * | 2007-05-31 | 2010-03-24 | 佳能株式会社 | Manufacturing method of thin film transistor using oxide semiconductor |
| CN102313849A (en) * | 2010-06-30 | 2012-01-11 | 株式会社神户制钢所 | The evaluation method of oxide semiconductor thin-film and the method for quality control of oxide semiconductor thin-film |
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| JP2005038996A (en) | 2003-07-18 | 2005-02-10 | Toshiba Corp | Method of manufacturing semiconductor device |
| JP2008191123A (en) * | 2007-02-08 | 2008-08-21 | Kobe Steel Ltd | Crystallinity measuring instrument for thin film semiconductor, and method therefor |
| WO2009134211A1 (en) * | 2008-04-29 | 2009-11-05 | Agency For Science, Technology And Research | Inorganic graded barrier film and methods for their manufacture |
| US8894458B2 (en) * | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
| JP5814558B2 (en) * | 2010-06-30 | 2015-11-17 | 株式会社神戸製鋼所 | Evaluation method of oxide semiconductor thin film and quality control method of oxide semiconductor thin film |
| CN102712997B (en) * | 2010-11-08 | 2014-03-19 | 三井金属矿业株式会社 | Divided sputtering target and method for producing same |
| CN102686767B (en) * | 2010-11-08 | 2014-05-28 | 三井金属矿业株式会社 | Divided sputtering target and method for producing same |
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| CN101681928A (en) * | 2007-05-31 | 2010-03-24 | 佳能株式会社 | Manufacturing method of thin film transistor using oxide semiconductor |
| CN102313849A (en) * | 2010-06-30 | 2012-01-11 | 株式会社神户制钢所 | The evaluation method of oxide semiconductor thin-film and the method for quality control of oxide semiconductor thin-film |
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