CN102712997B - Divided sputtering target and method for producing same - Google Patents
Divided sputtering target and method for producing same Download PDFInfo
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- CN102712997B CN102712997B CN201180005295.6A CN201180005295A CN102712997B CN 102712997 B CN102712997 B CN 102712997B CN 201180005295 A CN201180005295 A CN 201180005295A CN 102712997 B CN102712997 B CN 102712997B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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Abstract
The present invention provides a divided sputtering target obtained by joining a plurality of target members, whereby it is possible to effectively prevent contamination of the formed thin formed by the constituent material of the backing plate, as a result of sputtering. The present invention is a divided sputtering target obtained by joining a plurality of target materials on a backing plate by means of low-temperature soldering, wherein a protective member is provided to the backing plate along the gap formed between the joined target members.
Description
Technical field
The present invention relates to engage a plurality of target structures and cut apart sputter target, relate in particular to the sputter target of cutting apart being suitable for when being formed by oxide semiconductor at target structure.
Background technology
In recent years, sputtering method is used a lot when the various electronic components such as manufacturing information machine, AV machine, family's electrical article, for example, in the display unit of liquid crystal indicator etc., the semiconductor subassembly of thin film transistor (being called for short TFT) etc. forms by sputtering method exactly.Because sputtering method is very effectively will to form the film of transparent electrode layer etc., the method for making forming with big area, high precision.
Yet, in nearest semiconductor subassembly, for the oxide semiconductor with IGZO (In-Ga-Zn-O) representative replaces amorphous silicon (amorphous silicon), very gazed at.So, relate to this oxide semiconductor, be also put into and utilize sputtering method to carry out in planning of oxide semiconductor thin-film film forming.Yet the sputter target of the oxide semiconductor using during sputter, because its material is pottery, therefore be difficult to form large-area target with a slice target structure.Therefore, prepare the oxide semiconductor target member that multi-disc has certain degree size, and engage having on the supporting plate of desired area, to manufacture large-area oxide semiconductor sputter target (for example, with reference to patent documentation 1).
The supporting plate of this sputter target, is used supporting plate made of copper conventionally, described supporting plate and target structure engage the eutectic solder that uses thermal conduction good, for example metal of In system.For example, when manufacturing big area, tabular oxide semiconductor sputter target, prepare large-area copper supporting plate, this supporting plate surface is divided into a plurality of regions, prepare the oxide semiconductor target member that multi-disc meets described region area.So, on supporting plate, configure a plurality of target structures, by In, be or Sn is the eutectic solder of metal that whole target structures is engaged on supporting plate.During joint, consider the thermal expansion difference of Cu and oxide semiconductor, between the target structure of adjacency, can form the mode in 0.1mm to 1.0mm gap when the room temperature, adjust configuration.
Use the sputter target of cutting apart so a plurality of oxide semiconductor target members joints being obtained, and while making forming thin film form semiconductor subassembly by sputter, in sputter is processed, from the gap between target structure, make the constituent material Cu of supporting plate also by sputter, have what is called to sneak into the doubt of the problem in the oxide semiconductor thin-film of formation.Though the Cu in film only has the mixed volume of several ppm degree, but the impact on oxide semiconductor is very big, for example, electric field effect movability (field-effect mobility) in TFT component characteristic, at the formed semiconductor subassembly of interstitial site (sneaking into the film of Cu) being equivalent between target structure, compare with the semiconductor subassembly of other parts, have the tendency of step-down, ON/OFF is than also there being the tendency of step-down.Improper phenomenon like this, is scolded that requirement at present improves technology rapidly into the main stopping cause that big areaization is inclined in the past.Moreover, so cut apart the problem of sputter target, even during the material beyond target structure is oxide semiconductor, also there is the possibility that produces same improper phenomenon, in order to promote the big area of sputter target, be the essential problem solving.
Patent documentation 1: TOHKEMY 2005-232580 communique
Summary of the invention
[problem that invention wish solves]
The present invention is the person of one-tenth under as the background of above thing, take and provide a kind of sputter target of cutting apart as object, for thering is large-area sputter target, by a plurality of target structures being engaged to the sputter target of cutting apart obtaining, while forming film via sputter, can effectively prevent that the constituent material of supporting plate from sneaking in the film of film forming.
[solving the means of problem]
In order to solve described problem, of the present invention being characterized as on supporting plate, engages by eutectic solder cutting apart in sputter target that a plurality of target structures form, along formed gap between the target structure engaging, protective is set on supporting plate.According to the present invention, formed gap between the target structure engaging on supporting plate, does not expose supporting plate surface, and the structured material that can effectively prevent supporting plate is by sputter.
Protective in the present invention, for referring to cover the supporting plate surface person that between the target structure having engaged on supporting plate, formed gap location exposes, refers to have to make that the film of film forming is had to dysgenic material, can't help the actor of gap generation when sputter.As protective so, on supporting plate surface, configure banded protection member, or by becoming the material of protective, by methods such as coating, plating, sputters, arrange, to be oxidized the surface formation oxide film thereon of supporting plate itself and to arrange.Especially, in the present invention, protective is that to configure banded protection member be good.
As the material of protective like this, even if sneak in the film of film forming, can not invest dysgenic material yet, for example, can use in the component that forms target structure all or part of, the alloy that contains these elements or oxide compound etc.
As other material person, for suppressing the material of the sputter phenomenon of inside, gap when the sputter, for example, can use the material that its volume resistance is larger than target structure, namely using high resistance material as protective again.Using high resistance material like this, when protective is used, the volume specific resistance of high resistance material (Ω cm) be take the material of the 10 times of above values of volume specific resistance with target structure as good.
Again, relate to the material of described protective, the chemical constitution of this material is substantially different person with the chemical constitution of the eutectic solder using in order to engage with supporting plate.For example, using indium metal, when eutectic solder is used, protective now refers to the meaning that is not indium metal.Again, the gap between target structure, though there is the situation of the indium metal of residual eutectic solder, when the residual indium of gap solidifies during this time, its surface can oxidation.The indium metal of the eutectic solder using in so engaging curing situation in gap, on described indium surface owing to being difficult to form uniform oxide film, therefore can not bring into play the effect same with high resistance material as described protective of the present invention.
The sputter target of cutting apart in the present invention is usingd tabular, cylindric person as object.Tabular sputter target is on tabular supporting plate, and after having a plurality of tabular target structure planar configuration of square face, bonder is as object.Again, sputter target cylindraceous is on cylindric supporting plate, a plurality of cylindrical target members (hollow circuit cylinder) are penetrated, cylinder axis direction at cylindric supporting plate is configured to multistage shape and bonder, or, the bending target structure that hollow circuit cylinder is longitudinally cut off along cylinder axis direction, toward the outer side of cylindric supporting plate, a plurality of side by side and be object through bonder at circumferential direction.This sputter target of cutting apart tabular or cylindraceous is used a lot in large-area sputtering apparatus.Again, though the present invention is usingd shape tabular, cylindraceous as object, do not hinder the application of cutting apart sputter target to other shapes, relevant target structure does not limit shape for this reason.Therefore, relate to the composition of target structure, also can be suitable for the metals such as the oxide semiconductors such as IGZO or ZTO or transparency electrode (ITO) or Al, the composition aspect of target structure is not restriction also.
Protective in the present invention is preferably Zn, Ti, any tinsel of Sn, or contains any above tinsel in more than 80 quality % Zn, Ti, Sn, or ceramic sheet or polymer sheets.So long as so tinsel or ceramic sheet, with In system or Sn be that the reactivity of eutectic solder of metal is low, the situation of oxide semiconductor film forming, even if sneak in the oxide semiconductor thin-film of film forming micro-ly, with Cu comparison, on the impact of TFT component characteristic, also can tail off.
Because polymer sheets is high resistance material, therefore when sputter, can suppress sputter phenomenon in the gap between target structure, can prevent the detrimentally affect to the film of film forming again.As ceramic sheet person, the thin slice that can use aluminum oxide or silicon oxide to be.As the material person of polymer sheets in the present invention, can enumerate: the synthetic resins materials such as phenol resins, U.S. resistance to ware (trimeric cyanamide) resin, epoxy resin, urea-formaldehyde resin, ethylene chloride resin, polyethylene, polypropylene; Or polyethylene, poly-ethylene chloride, polypropylene, polystyrene etc. are general with plastic material; Polyvinyl acetate (PVA), ABS resin, AS resin, acrylic resin etc. are accurate general with plastic material etc.Moreover, also can use the engineering plastics such as polyoxymethylene, polycarbonate, upgrading polyphenylene ether (PPE), polybutyl terapthalate; Or the super engineering plastics such as poly-aryl acid esters (Polyarylate), polysulfones, polyphenylene sulfide, polyether-ether-ketone, polyimide resin, fluoroplast.Especially, polyimide resin etc. is also banded material, because thermotolerance, insulativity are also high, therefore for being applicable to present inventor.
Tinsel or ceramic sheet or the thickness of polymer sheets is preferably 0.0001mm to 1.0mm.Tinsel or the width of ceramic sheet are preferably and the identical or width more than this in formed gap between target structure, and while considering workability etc., width is preferably 5.0mm to 20mm.Again, on supporting plate, configure arbitrary tinsel of Zn, Ti, Sn, or any the above Alloy Foil that contains more than 80 quality % Zn, Ti, Sn, or when ceramic sheet or polymer sheets, can use eutectic solder or electroconductibility two sides adhesive tape etc. to be pasted.
Protective in the present invention; be preferably to have by the 1st protection member of band shape the lamination structure with the 2nd protection member of band shape; when lamination has the structure of so banded protection member; can easily manufacture the sputter target of cutting apart that the present invention is correlated with, can coordinate the material of target structure or supporting plate suitably to select the 1st protection member and the 2nd to protect the material of member.This 1st protection member protects the band widish of member to equate with the 2nd, also can be different.Again, the protective of this lamination structure, for making the 1st protection member protect member at the state of supporting plate side in target structure side, the 2nd, along formed gap configuration between the target structure engaging.
The situation that protective in the present invention arranges by banded protection member, the 2nd protection member of the 1st protection member of the narrow width of lamination and wide cut, can make the structure of exposing the 2nd protection member in the both end sides of the 1st protection member.In this structure, become in wide cut the 2nd protection member the narrow width of upper lamination the 1st protection member two-layer structure.Though target structure carries out with engaging by eutectic solders such as In or Sn of supporting plate, the heat treated in the time of can envisioning by joint, protection member reacts and alloying with eutectic solder.Eutectic solder for this joint of Reusability; when frequency of utilization uprises, by the alloying with protection member, the composition of eutectic solder can produce change; target structure becomes insufficient with engaging of supporting plate, and being considered to has bad impact to bond strength or bonding area.At this; select with the nonreactive material of eutectic solder as the 2nd protection member; by the 1st protection member with the easy reaction material of eutectic solder is set thereon, can suppress contacting of the 1st protection member and eutectic solder, can prevent the component fluctuation of eutectic solder.
In the present invention, lamination banded protection member and the situation of protective is set, the thickness of the 1st protection member is preferably 0.0001mm to 0.3mm, and the thickness of the 2nd protection member is to be preferably 0.1mm to 0.7mm.The aggregate thickness of the 1st protection member and the 2nd protection member is preferably 0.3mm to 1.0mm.Again, when lamination is protected member with the 1st protection member and the 2nd of width, the width of protection member is preferably 5mm to 30mm.During the 2nd protection member of the 1st protection member and wide cut of the narrow width of lamination, the 1st to protect the width of member to be preferably identical with the gap forming between target structure or than this large width, considers while making Cong Xing etc., is preferably 5mm to 20mm.The width of the 2nd protection member of wide cut is preferably than the wide 3mm to 10mm of width of the 1st protection member.
Again, the protective in the present invention, can be also by arranged side by side the 2nd three array structures of protecting member to become of configuration of the 1st protection member and both end sides at the 1st protection member.So, in the both sides of the 1st protection member side by side during configuration the 2nd protection member, become with the protective of the two-layer structure of the protection member of narrow width and wide cut described in lamination and bring into play effect same.Again, the both end sides of the 1st protection member refers to the both sides of protecting the length direction of member to extend in the 1st of band shape.While making the protective of this three array structure, the thickness of the 1st protection member and the 2nd protection member is to take 0.0001mm to 1.0mm as good.Again, the width of the 1st protection member is identical with the gap forming between target structure or is good than this large width, while considering workability etc., take 5mm to 20mm as good.The width of the 2nd protection member is to take 3mm to 10mm as good.
In the present invention, protective makes the situation of described two-layer structure or three array structures; the 2nd protection member is made to the tinsel being become by any single metal of Cu, Al, Ti, Ni, Zn, Cr, Fe or any alloy that contains these metals; by the 1st protection member, be preferably more than one single metal or alloy or the stupalith former of containing the contained element of target structure.In the present invention, target structure is when being consisted of oxide semiconductor, and a kind of the become single metal or alloy or the stupalith that are preferably the contained element of oxide semiconductor that forms target structure form the 1st protection member.
Protective in the present invention makes the situation of described two-layer structure or three array structures, and the 1st protection member is preferably by any above oxide compound that contains In, Zn, Al, Ga, Zr, Ti, Sn, Mg or the stupalith that nitride becomes and forms.So long as these stupaliths, owing to having same composition with target structure, or the composition of a part is identical with target structure, therefore even sneak in film when film forming, also little on the impact of TFT component characteristic.Again, as long as be ZrO
2, Al
2o
3deng stupalith, because resistance is high, in the time of can being suppressed at sputter, the plasma of partitioning portion (plasma) is entered, can effectively prevent the sputter of Zr or Al.As described stupalith person, for example, can enumerate In
2o
3, ZnO, Al
2o
3, ZrO
2, TiO
2, IZO, IGZO etc.; Or ZrN, TiN, AlN, GaN, ZnN, InN etc.Again, these stupaliths, make as the paper tinsel as metal owing to being difficult to processing, therefore utilize vapour deposition method, sputtering method, plasma spray method, coating method etc. to form the 1st protection member, go for the present invention.
The situation that in the present invention, target structure is oxide semiconductor, described oxide semiconductor can be used any above oxide compound person of one-tenth in containing In, Zn, Ga.On concrete, can enumerate IGZO (In-Ga-Zn-O), GZO (Ga-Zn-O), IZO (In-Zn-O), ZnO.
Again, the situation that in the present invention, target structure is oxide semiconductor, described oxide semiconductor can be used any above oxide compound person of one-tenth in containing Sn, Ti, Ba, Ca, Zn, Mg, Ge, Y, La, Al, Si, Ga.On concrete, can enumerate Sn-Ba-O, Sn-Zn-O, Sn-Ti-O, Sn-Ca-O, Sn-Mg-O, Zn-Mg-O, Zn-Ge-O, Zn-Ca-O, Zn-Sn-Ge-O or, the Ge of these oxide compounds is altered to the oxide compound of Mg, Y, La, Al, Si, Ga.
Therefore, the situation that in the present invention, target structure is oxide semiconductor, described oxide semiconductor can be used by any above oxide compound person of one-tenth of containing Cu, Al, Ga, In.On concrete, can enumerate: Cu
2o, CuAlO
2, CuGaO
2, CuInO
2.
[invention effect]
According to the present invention, a plurality of target structures are engaged and cutting apart in sputter target of obtaining, by sputter, can prevent that the structured material of supporting plate from sneaking in the film of film forming effectively.
Accompanying drawing explanation
Fig. 1 represents to cut apart sputter target approximate three-dimensional map.
Fig. 2 represents the general view of the supporting plate of this example.
Fig. 3 represents to configure the summary sectional view of the protective of individual layer.
Fig. 4 represents to configure the summary sectional view of the protective of two-layer structure.
Fig. 5 represents the summary sectional view by the protective of the protection member configuration two-layer structure of different in width.
Fig. 6 represents to configure the summary sectional view of the protective of three array structures.
Primary clustering nomenclature
10 supporting plates
20 target structures
30 gaps
50 protectives
51 the 1st protection members
52 the 2nd protection members
60 eutectic solders.
Embodiment
[optimal morphology carrying out an invention]
Below, with reference to the relevant example of the present invention of drawing explanation.
The tabular sputter target of this example, as shown in Figure 1, on Cu supporting plate 10 processed, configures a plurality of target structures 20 and through bonder.These target structure mutual between, form the gap 30 of 0.1mm to 1.0mm.
As shown in Figure 2, on the surface of supporting plate 10, being equivalent to the target structure interstitial site of formation each other, paste protective 50.Protective is to use eutectic solder or electroconductibility two sides adhesive tape, and can paste on supporting plate 10 surfaces.
6 target structures are used the eutectic solder of In or Sn, as shown in Figure 1 general configuration joint.This engages as by supporting plate and target structure are heated to preset temperature simultaneously, at the eutectic solder (In or Sn) of supporting plate surface coated melting, target structure is configured on described eutectic solder to the also mode of cool to room temperature and carries out.
Fig. 3 represents to use the cross section sketch chart of the protective of individual layer.The protective 50 of individual layer, thickness is 0.0001mm to 1.0mm, with arbitrary tinsel of Zn, Ti, Sn, any above Alloy Foil of Zn, Ti, Sn containing more than 80 quality %, forms.In the both end sides of the protective 50 of described individual layer, form the state of the eutectic solder 60 that has In.
Fig. 4 represents that lamination is with the cross section sketch chart of the protective of the two-layer structure of the band shape protection member of width.The protective 50 of two-layer structure is consisted of the 1st protection member 51 and the 2nd protection member 52.Therefore, described the 1st protection member 51 and the 2nd is protected the width of member 52, considers workability etc. and is set as 5mm to 20mm.In the both end sides of described the 1st protection member 51 and the 2nd protection member 52, form the state of the eutectic solder 60 that has In again.
Fig. 5 represents the protective cross section sketch chart of two-layer structure of the protection member of lamination different in width.The protective 50 of two-layer structure is consisted of the 1st protection member 51 and the 2nd protection member 52.Therefore, the width of described the 1st protection member 51, considers workability etc. and is set as 5mm to 20mm, the width of the 2nd protection member 52 is to be set as 8mm to 30mm, compared with the 1st protection member, and the wider width of the 2nd protection member.Therefore,, by almost centre configuration the 1st protection member 51 at the 2nd protection member, the both end sides that is formed on the 1st protection member is exposed the state of the 2nd protection member 52.The width of described exposed portions serve, one-sided at each of both end sides is 1.5mm to 5mm.In the both end sides of the 1st protection member 51 and the 2nd protection member 52, form the state of the eutectic solder 60 that has In again.
Shown in Fig. 4 and Fig. 5 the 2nd protects member 52, and thickness is 0.1mm to 0.7mm, with arbitrary tinsel of Cu, Al, Ti, Ni, Zn, Cr, Fe, contain these any above Alloy Foil and formed.Shown in Fig. 4 and Fig. 5 the 1st protects member 51, and thickness is 0.0001mm to 0.3mm, by by form the element of target structure 20 a kind of single metal of one-tenth, contain more than one alloy or the In at the contained element of target structure
2o
3, ZnO, Al
2o
3, ZrO
2, TiO
2, IZO, IGZO any stupalith form.
The protective of two-layer structure shown in Fig. 4 and Fig. 5, for example, can pass through plasma spray, by Al
2o
3, ZrO
2pottery blow and pay to the Cu paper tinsel of 0.3mm thickness and make.Use commercially available gas plasma meltallizing device, on the Cu of thickness 0.3mm paper tinsel surface, with the ZrO of median size 200 μ m
2powder, as raw material, can form the ZrO that 0.0001mm is thick
2ceramic layer.Again, Al
2o
3situation also can make equally.
Cross section sketch chart when Fig. 6 represents to use the protective of three array structures.The protective 50 of three array structures, the both sides on the limit, two ends that the length direction of serving as reasons at the 1st protection member 51 extends, with the 2nd protection member 52 side by side the structure of configuration become.Now, the width of the 1st protection member 51, considers workability etc. and is set as 5mm to 20mm, the width of the 2nd protection member 52 is 3mm to 10mm.As shown in Figure 6, be formed on two ends configuration the 2nd protection member of the 1st protection member 51, at a distolateral state that has the eutectic solder 60 of In of described the 2nd protection member 52.Again, the thickness of the 1st protection member and the 2nd protection member is 0.0001mm to 1.0mm.
In Fig. 3 to Fig. 6, use high resistance material as the situation of protective, form by high resistance material and form the protective 50 of Fig. 3, the 1st protection member 51 in Fig. 4 to Fig. 6.In a word, in Fig. 3 to Fig. 6, in target structure, supporting plate, eutectic solder, protective (the 1st protection member), protective (the 1st protection member) has maximum volume resistance value to become emphasis.Use high resistance material like this protective cut apart sputter target, in the either method of DC sputtering method, high frequency sputtering method, all can bring into play effect, in DC sputtering method, be especially appropriate ones.
Embodiment
Specific embodiment is below described.That makes cuts apart sputter target, for by anaerobic supporting plate made of copper (width 30mm, vertical 630mm, horizontal 710mm), engages and makes with IGZO target structure processed of 6 (width 6mm, indulge 210mm, horizontal 355mm).The eutectic solder that engages use is to use In.Again, the gap between target structure is 0.5mm.
IGZO target structure processed is weighing In
2o
3, Ga
2o
3, ZnO each raw material powder with the ratio of 1mol:1mol:2mol, by 20 hours combination treatment of ball mill grinding.Then, using the polyvinyl alcohol water solution that is diluted to 4 quality % as sticking agent, take with respect to powder total amount after 8 quality % add and mix, at 500kgf/cm
2forming under the pressure.In atmosphere, through 1450 ℃, 8 hours, burn till subsequently processing and obtain tabular sintered compact.Then, this sintered compact is ground two sides by plane grinder, make the IGZO target structure processed of thickness 6mm, vertical 210mm, horizontal 355mm.
As the protective person of individual layer, the 2 kind tinsels of the Zn of used thickness 0.3mm, Ti.Protective person as the two-layer structure of the protection member of lamination different in width, uses using the Cu tinsel of thickness 0.3mm, width 20mm as the 2nd protection member, and the Zn paper tinsel of thickness 0.1mm, width 15mm is as the 1st banded protection member and through lamination person.Again; the protective person of the two-layer structure of another the protection member as lamination different in width; use is on the 2nd banded protection member of the Cu tinsel of thickness 0.3mm, width 20mm; use the alloys target that atomic ratio is In:Ga:Zn=1:1:1, and by sputter, the IGZ film of 0.0001mm thickness (width 15mm) is used as to the 1st protection member and former.Moreover, as the two-layer structure protective person of the protection member of lamination same widths, use the Cu tinsel of thickness 0.3mm, width 20mm as the 2nd protection member, by the ZrO of thickness 100 μ m
2be used as the 1st protection member, by sputter by the 2nd protection member overall with covering person.Also can use with Al again,
2o
3replace ZrO
2and covering person.
Make and respectively cut apart after sputter target, carry out sputter evaluation test.This sputter evaluation test, is used sputtering apparatus (SMD-450B, Ulvac company system), at the upper IGZO film that forms thickness 14 μ m of alkali-free glass substrate (NEG company system).Then, the substrate to this film forming, cuts the direct upper substrate of the gap portion that is equivalent to cut apart sputter target and the substrate beyond gap portion, and to the substrate cutting out, the mixed volume of measuring Cu in IGZO film by atomic absorption analysis carries out sputter assessment.Result represents in table 1.Again, to gap portion not configuration protection body cut apart sputter target, carry out too sputter evaluation test as comparison.
Table 1
As shown in table 1, the situation of protective is set, the mixed volume of the copper of IGZO film is not reached to 2ppm (detection limit of atomic absorption analysis is following).With respect to this, the situation of protective is not set, to the mixed volume of the copper of IGZO film, at gap portion, be 19ppm.
[the possible usability in industry]
The present invention, when use is cut apart sputter target and formed large-area film, can prevent that impurity from sneaking in the film of film forming effectively.
Claims (5)
1. cut apart a sputter target, on supporting plate, a plurality of oxide semiconductor target members being engaged to former by eutectic solder, it is characterized in that, along formed gap between the oxide semiconductor target member engaging, protective is set on supporting plate;
Protective comprises the 1st banded protection member and the 2nd banded protection member, and the 2nd protection member is disposed at supporting plate side, and on the 2nd protection member, lamination has the 1st protection member;
The 1st protection member is to comprise oxide compound or the stupalith of nitride forms;
The 2nd protection member in Cu, Al, Ti, Ni, Zn, Cr, Fe any one single metal or contain the tinsel that in these metals, the alloy of any one becomes.
2. the sputter target of cutting apart according to claim 1, is characterized in that, protective is by the 1st protection member of same widths and the 2nd protection former of member institute.
3. the sputter target of cutting apart according to claim 1, is characterized in that, protective is by the 2nd protection member lamination person of forming of the 1st protection member and wide cut of narrow width, and the both end sides that is formed on the 1st protection member is exposed the 2nd structure of protecting member.
4. according to the sputter target of cutting apart described in any one of claims 1 to 3, it is characterized in that, the stupalith of the 1st protection member is to contain any above oxide compound or nitride in In, Zn, Al, Ga, Zr, Ti, Sn, Mg.
5. a manufacture method of cutting apart sputter target; for being manufactured on the method for cutting apart sputter target described in any one that on supporting plate, a plurality of oxide semiconductor target members is engaged to the claim 1 to 4 forming by eutectic solder; it is characterized in that; along formed gap between the oxide semiconductor target member engaging; the protective that lamination has the 1st banded protection member to form with the 2nd banded protection member is set on supporting plate
And a plurality of oxide semiconductor target members are bonded on to person on supporting plate by eutectic solder.
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| JP2010249780 | 2010-11-08 | ||
| JP2010-249780 | 2010-11-08 | ||
| PCT/JP2011/065951 WO2012063524A1 (en) | 2010-11-08 | 2011-07-13 | Divided sputtering target and method for producing same |
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| JP (2) | JP4961514B1 (en) |
| KR (1) | KR101227607B1 (en) |
| CN (1) | CN102712997B (en) |
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| JP2013185160A (en) * | 2012-03-06 | 2013-09-19 | Jx Nippon Mining & Metals Corp | Sputtering target |
| JP6059460B2 (en) * | 2012-07-20 | 2017-01-11 | 株式会社コベルコ科研 | Target assembly |
| JP5759425B2 (en) * | 2012-07-20 | 2015-08-05 | 株式会社神戸製鋼所 | Quality evaluation method of target assembly used for forming thin film for semiconductor layer of thin film transistor |
| JP6079228B2 (en) * | 2012-12-28 | 2017-02-15 | 東ソー株式会社 | Multi-sputtering target and method for manufacturing the same |
| JP6492877B2 (en) * | 2015-03-30 | 2019-04-03 | 東ソー株式会社 | Oxide sintered body and manufacturing method thereof |
| JP2017014562A (en) * | 2015-06-30 | 2017-01-19 | 株式会社コベルコ科研 | Sputtering target assembly |
| CN106711196B (en) * | 2016-10-20 | 2019-11-19 | 浙江大学 | A kind of p-type ZnGeSnO amorphous oxide semiconductor film and preparation method thereof |
| JP6960989B2 (en) * | 2017-03-31 | 2021-11-05 | 三井金属鉱業株式会社 | Split sputtering target |
| AT16261U1 (en) * | 2018-04-20 | 2019-05-15 | Plansee Se | Composite body and method of making a composite body |
| JP7311290B2 (en) * | 2019-03-27 | 2023-07-19 | Ｊｘ金属株式会社 | Segmented sputtering target and manufacturing method thereof |
| JP6968300B2 (en) * | 2019-06-10 | 2021-11-17 | 株式会社アルバック | Sputtering target and manufacturing method of sputtering target |
| KR102376281B1 (en) * | 2019-06-10 | 2022-03-17 | 가부시키가이샤 아루박 | Sputtering target and manufacturing method of sputtering target |
| CN113811633A (en) * | 2019-08-08 | 2021-12-17 | 三井金属矿业株式会社 | Segmented sputter target |
| CN114630921A (en) * | 2019-11-01 | 2022-06-14 | 三井金属矿业株式会社 | Gap arrangement member |
| WO2021157112A1 (en) * | 2020-02-06 | 2021-08-12 | 三井金属鉱業株式会社 | Sputtering target |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2280717Y (en) * | 1996-08-27 | 1998-05-06 | 深圳市创益科技发展有限公司 | Flat magnetic-control sputter target board of transparent conductive film |
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| JP2939751B2 (en) * | 1989-03-28 | 1999-08-25 | 株式会社高純度化学研究所 | Split sputtering target |
| JP3618005B2 (en) * | 1994-08-23 | 2005-02-09 | 三井金属鉱業株式会社 | Manufacturing method of sputtering target for rotating cathode |
| JPH10121232A (en) * | 1996-10-14 | 1998-05-12 | Mitsubishi Chem Corp | Sputtering target |
| JP3759673B2 (en) * | 1998-01-12 | 2006-03-29 | 三井金属鉱業株式会社 | Sputtering target and manufacturing method thereof |
| JP4427831B2 (en) * | 1998-06-08 | 2010-03-10 | 東ソー株式会社 | Sputtering target and manufacturing method thereof |
| JP2004270019A (en) * | 2003-03-10 | 2004-09-30 | Kojundo Chem Lab Co Ltd | Division-type sputtering target |
| JP2006263504A (en) * | 2005-03-22 | 2006-10-05 | Hitachinaka Techno Center:Kk | Tantalum oxide-based photocatalyst and manufacturing method therefor |
| US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
| JP2009084657A (en) * | 2007-10-02 | 2009-04-23 | Mitsubishi Materials Corp | Sputtering target and target assembly |
| JP2009161819A (en) * | 2008-01-08 | 2009-07-23 | Fuji Electric Holdings Co Ltd | Sputtering system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2280717Y (en) * | 1996-08-27 | 1998-05-06 | 深圳市创益科技发展有限公司 | Flat magnetic-control sputter target board of transparent conductive film |
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| Publication number | Publication date |
|---|---|
| CN102712997A (en) | 2012-10-03 |
| TW201237203A (en) | 2012-09-16 |
| JP2012127005A (en) | 2012-07-05 |
| KR20120094057A (en) | 2012-08-23 |
| JP4961514B1 (en) | 2012-06-27 |
| JPWO2012063524A1 (en) | 2014-05-12 |
| KR101227607B1 (en) | 2013-01-30 |
| TWI403605B (en) | 2013-08-01 |
| WO2012063524A1 (en) | 2012-05-18 |
| JP5711172B2 (en) | 2015-04-30 |
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