CN105908139A - Laminated wiring film for electronic components and sputtering target material for forming coating layer - Google Patents
Laminated wiring film for electronic components and sputtering target material for forming coating layer Download PDFInfo
- Publication number
- CN105908139A CN105908139A CN201610105605.6A CN201610105605A CN105908139A CN 105908139 A CN105908139 A CN 105908139A CN 201610105605 A CN201610105605 A CN 201610105605A CN 105908139 A CN105908139 A CN 105908139A
- Authority
- CN
- China
- Prior art keywords
- atom
- coating
- sputtering target
- target material
- aforementioned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/002—Alloys based on nickel or cobalt with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/005—Alloys based on nickel or cobalt with Manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a laminated wiring layer for an electronic component having a new coating layer and a sputtering target material for forming a coating layer, capable of stably performing wet etching with high accuracy while ensuring adhesion, weatherability, and oxidation resistance. The laminated wiring film for an electronic component includes a conductive layer containing Ag or an Ag alloy and a coating layer covering at least one surface of the conductive layer, the coating layer containing 1 to 25 atomic% of Mn, 4 to 40 atomic% of Mo, a total of 60 atomic% or less of the Mn and the Mo and at least one element selected from the group consisting of Cu and Fe, and the balance being Ni and unavoidable impurities. The coating layer may be formed of a sputtering target as follows: 1 to 25 atomic% of Mn, 4 to 40 atomic% of Mo, and a total of 60 atomic% or less of the Mn, the Mo and one or more elements selected from Cu or Fe, the balance being Ni and unavoidable impurities, with Curie point below normal temperature.
Description
Technical field
The present invention relates to can be used in the electronic component-use stacking wiring membrane of such as touch panel etc.；Be used for
Forming the sputtering target material of coating, described coating covers the conduction of this electronic component-use stacking wiring membrane
Layer.
Background technology
In recent years, the liquid crystal display (Liquid being formed with thin-film device on the glass substrate has been carried out
Crystal Display: hereinafter referred to as " LCD "), organic el display, electricity for Electronic Paper etc.
The flat display apparatus such as swimming escope (flat faced display, Flat Panel Display: hereinafter referred to as
" FPD ") upper combination has and can watch its picture limit and give touch panel new of direct operability in limit
Pocket terminal i.e. smart mobile phone, the goods of flat board PC etc..Position as these touch panels is examined
The sensor film surveying electrode generally uses indium-tin-oxide (the Indium Tin as nesa coating
Oxide: hereinafter referred to as " ITO ").And in its bridge joint wiring, lead-out wiring, as having more
The metal line film of low resistance value (hereinafter referred to as low resistance), such as employ be laminated with Mo,
The stacking wiring membrane of Mo alloy and Al, Al alloy.
In recent years, the large screen of LCD, FPD etc. of using in smart mobile phone, flat board PC etc., high-precision
Refinement, high-speed responsiveization advance the most rapidly, and this sensor film and metal line film require the lowest
Resistance.Therefore, it is proposed to following sensor film: low-resistance metal level shape will be in a ratio of with ITO
Become netted metal nethike embrane mode etc..
Have studied and apply Cu, Ag the lowest for resistance ratio Al as a result, Cu is at oxytolerant in this metal nethike embrane
The property changed, adaptation and the moisture-proof as one of against weather have problems, and therefore, have operating difficulties
Problem.On the other hand, costliness compared with Ag with Cu, but oxidative resistance than Cu, excellent moisture resistance,
Therefore it is likely.But, Ag is low with the adaptation of substrate and is easily peeled off, so easily and chlorine,
Reaction of Salmon-Saxl, therefore has problems in terms of against weather.Therefore, in order to solve adaptation, against weather
The distinctive problem of so Ag, it is proposed that the Ag coating formed by other metals is coated to.
It addition, for the substrate of touch panel, for the slimming of smart mobile phone, flat board PC etc., also profit
With use compared with glass substrate can the mode of the resin film substrate of slimming further, above-mentioned quilt
Coating is also required to and the adaptation of resin film substrate.
As forming above-mentioned metal line film, the maneuver of coating, the sputtering method using sputtering target material is
Good.Sputtering method is one of physical vapor deposition, compared with other vacuum evaporations, ion plating, for holding
The easily method of large area film forming, and for the effective hands of the few excellent thin layer of component fluctuation can be obtained
Method.It addition, for the heat affecting of substrate less, also be able to the maneuver for resin film substrate.
Present inventors have proposed, by be formed as being laminated with the adaptation of glass etc. low comprise Cu,
The conductive layer of Ag and comprising based on Mo and the stacking of coating of Mo alloy containing V and/or Nb
Wiring membrane, such that it is able to maintain the low resistance that had of Cu, Ag, and improve corrosion resistance, thermostability,
Adaptation (with reference to patent documentation 1) with glass substrate.This technology is for the TFT being formed on glass substrate
Wiring membrane be effective technology.
It addition, present inventors have proposed following stacking wiring membrane: on the conductive layer upper strata comprising Ag, Cu
Being laminated with coating, described coating comprises: the Cu of 1～25 atom %, 1～25 atom % selected from Ti, Zr,
Element in Hf, V, Nb, Ta, Cr, Mo, W and addition add up to 35 below atom %
Ni alloy (with reference to patent documentation 2).The coating proposed in this patent documentation 2 is added with rule by employing
The Ni alloy of the transition metal such as quantitative Ti, V, Cr, such that it is able to reach weak magnetization, makes utilization
The film forming of sputtering can be stablized and long-time aspect is useful technology.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2004-140319 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2006-310814 publication
Summary of the invention
The problem that invention is to be solved
As described above, the high-precision refinement of FPD in recent years advances rapidly, therefore in touch panel, also
Expect to be etched well processing with narrower wiring width precision.
But, for Ag, it is not easy to carry out the precision i.e. dry-etching of high etching method, mainly use
Wet-type etching.It addition, resin film substrate has poisture-penetrability, therefore, coating with the conductive layer stacking of Ag
Layer requires than against weather the highest when being formed on glass substrate.
According to the research of the present inventor, being laminated with disclosed in patent documentation 1 is comprised to the conductive layer of Ag
With in the stacking wiring membrane of the coating comprising Mo alloy, confirm and sometimes send out on resin film substrate
Raw corrosion.The present inventor confirms, and the electrode potential of the Ag of conductive layer is high, therefore, low with electrode potential
Mo, above-mentioned Mo alloy stacking time, in the resin film substrate having poisture-penetrability, due to cell reaction
And easily make Mo, Mo alloy corrosion, have problems in terms of long reliability.
It addition, the present inventor confirms, to coating using compared with Mo electrode potential closer to Ag
The stacking wiring membrane of Ni alloy carry out Wet-type etching in the case of, there is the etching of coating in real estate
Become generation inequality uneven, easy, wiring width produces the situation of fluctuation, side etching quantitative change is big
, there is the problem that the wiring membrane being difficult to stably obtain the narrow width expected from now on is the newest in situation.
It is an object of the invention to, it is provided that using low-resistance Ag or Ag alloy as conductive layer, there is energy
Enough guarantee adaptation, against weather, oxidative resistance and stably carry out the new of high-precision Wet-type etching
The electronic component-use stacking wiring membrane of coating and coating formation sputtering target material.
For solving the scheme of problem
The present inventor in view of above-mentioned problem, to the conductive layer stacking comprising low-resistance Ag or Ag alloy
Coating alloy composition conduct in-depth research.Itself found that by Ni add Mn, Mo,
The such specific element of Cu and Fe so that it is addition optimization such that it is able to guarantee adaptation, gasproof
Hou Xing, oxidative resistance and stably carry out the new coating of high-precision Wet-type etching, complete this
Invention.
That is, the present invention is the invention of a kind of electronic component-use stacking wiring membrane, including: comprise Ag or Ag
The coating at least one face of the conductive layer of alloy and this conductive layer of covering, it is former that this coating contains 1～25
The Mn of sub-%, 4～40 Mo of atom %, containing adding up to the aforementioned Mn of 60 below atom %, aforementioned Mo
With more than one elements in Cu or Fe, surplus is made up of Ni and inevitable impurity.
It addition, aforementioned coating preferably comprises the aforementioned Mo and aforementioned Mn adding up to 20～50 atom %.
It addition, aforementioned coating more preferably contains the aforementioned Mo of 10～40 atom %, adds up to 30 atom %
Following aforementioned Cu and aforementioned Mn.
It addition, aforementioned coating more preferably contains the aforementioned Mo of 10～40 atom %, adds up to 30 atom %
Following aforementioned Cu and aforementioned Mn, the aforementioned Fe of 5 below atom %.
It addition, aforementioned coating further preferably contains the aforementioned Mn of 6～20 atom %, 15～40 atom %
Aforementioned Mo, 1～25 aforementioned Cu of atom %, and containing adding up to the aforementioned Mn of 35～60 atom %, front
Stating Mo, aforementioned Cu and aforementioned Fe, surplus is made up of Ni and inevitable impurity.
It addition, aforementioned coating further preferably contains the aforementioned Mn of 6～20 atom %, 15～40 atom %
Aforementioned Mo, 1～25 aforementioned Cu, aforementioned Fe of 3 below atom % of atom %, and containing adding up to
The aforementioned Mn of 35～60 atom %, aforementioned Mo, aforementioned Cu and aforementioned Fe, surplus is by Ni and inevitable
Impurity composition.
It addition, the present invention is for forming the aforementioned coating covering the conductive layer comprising Ag or Ag alloy
The invention of sputtering target material, described sputtering target material contains the Mn of 1～25 atom %, 4～40 Mo of atom %,
Containing adding up to the aforementioned Mn of 60 below atom %, aforementioned Mo and more than one yuan in Cu and Fe
Element, surplus is made up of Ni and inevitable impurity, and the curie point of described sputtering target material is below room temperature.
It addition, aforementioned sputtering target material preferably comprises the aforementioned Mo and aforementioned Mn adding up to 20～50 atom %.
It addition, aforementioned sputtering target material more preferably contains the aforementioned Mo of 10～40 atom %, adds up to 30 atom %
Following aforementioned Cu and aforementioned Mn.
It addition, aforementioned sputtering target material more preferably contains the aforementioned Mo of 10～40 atom %, adds up to 30 atom %
Following aforementioned Cu and aforementioned Mn, the aforementioned Fe of 5 below atom %.
It addition, aforementioned sputtering target material further preferably contains the aforementioned Mn of 6～20 atom %, 15～40 atom %
Aforementioned Mo, 1～25 aforementioned Cu of atom %, and containing adding up to the aforementioned Mn of 35～60 atom %, front
Stating Mo, aforementioned Cu and aforementioned Fe, surplus is made up of Ni and inevitable impurity.
It addition, aforementioned sputtering target material further preferably contains the aforementioned Mn of 6～20 atom %, 15～40 atom %
Aforementioned Mo, 1～25 aforementioned Cu, aforementioned Fe of 3 below atom % of atom %, and containing adding up to
The aforementioned Mn of 35～60 atom %, aforementioned Mo, aforementioned Cu and aforementioned Fe, surplus is by Ni and inevitable
Impurity composition.
The effect of invention
The present invention can obtain being laminated with the conductive layer of low-resistance Ag or Ag alloy and being able to ensure that this is led
The adaptation of electric layer, against weather, and for high oxidative resistance with stable high-precision wet type can be carried out
The new electronic component-use stacking wiring membrane of the coating of etching, and this coating can be provided to form use
Sputtering target material.Thus, become various electronic units, be such as formed at the touch on resin film substrate
Panel, flexible technology highly useful for FPD, greatly facilitate the stable manufacture of electronic unit, reliable
Property improve.
Accompanying drawing explanation
Fig. 1 is an example of the schematic cross-section of the electronic component-use stacking wiring membrane of the present invention.
Description of reference numerals
1. substrate
2. coating (basal layer)
3. conductive layer
4. coating (top layer)
Detailed description of the invention
It is illustrated in Fig. 1 by the one of the schematic cross-section of the electronic component-use stacking wiring membrane of the present invention.This
Bright electronic component-use stacking wiring membrane includes: the conductive layer 3 comprising Ag or Ag alloy and this conduction of covering
The coating 2,4 at least one face of layer 3, and be formed on substrate 1.In Fig. 1, at the two of conductive layer 3
Coating 2,4 is formed but it also may only form coating (basal layer) 2 or coating in one side on face
Any one in (top layer) 4, can suitably select.It should be noted that only by the one of conductive layer
When the coating of the individual face present invention covers, it is also possible to according to the purposes of electronic unit, another at conductive layer
Cover with the coating of the composition different from the present invention on one face.
Find: the important feature of the present invention is, the electronic component-use stacking wiring membrane shown in Fig. 1
In coating, by adding the element in Ni, Mn, Mo, Cu and Fe of specified quantitative, thus shape
Become the coating guaranteeing to be not likely to produce inequality when adaptation, against weather, oxidative resistance and Wet-type etching.
Hereinafter, the electronic component-use wiring membrane of the present invention is described in detail.
It should be noted that in the following description, " adaptation " refers to, it is difficult to and glass substrate, tree
Membrane of lipoprotein strippable substrate, can by peeling off adhesive tape time evaluate with or without the stripping of wiring membrane.It addition,
" against weather " refers to, the deterioration of the electrical contact that the envenomation under hot and humid environment causes
Difficulty, can be confirmed by the variable color of wiring membrane, such as, can be commented quantitatively by reflectance
Valency.It addition, " oxidative resistance " refers to, along with surface when heating in the atmosphere containing aerobic
The difficulty of the deterioration of the electrical contact of oxidation, can be confirmed by the variable color of wiring membrane, the most permissible
It is evaluated quantitatively by reflectance.
Coating in the electronic component-use stacking wiring membrane of the present invention has the following characteristics that containing 1～25 former
The Mn of sub-%, 4～40 Mo of atom %, containing adding up to the aforementioned Mn of 60 below atom %, aforementioned Mo
With more than one elements in Cu or Fe, surplus is made up of Ni and inevitable impurity.
As the Ni of one of the chief elements, for compared with Ag with glass substrate, as nesa coating
ITO, and then against weather, oxidative resistance high as the adaptation of the oxide etc. of insulating protective film are also
Excellent element, for by the coating conductive layer comprising Ag or Ag alloy such that it is able to obtain adaptation,
Against weather, the element improving effect of oxidative resistance.Conversely, for Ni, it is impossible to utilize Ag,
The etchant that Ag alloy is used is etched, it is therefore desirable to improve etching.
In the present invention, element M n in addition to Ni, Mo, Cu and Fe contained in coating are respectively provided with
Improve the effect of etching speed.Improving effect for it, Mo is the highest, is next Mn, Fe, Cu.
And, this improvement effect increase addition time can improve further, but addition total over 60
During atom %, Ni against weather inherently is greatly reduced.Therefore, by Mn, Mo, Cu and Fe
Total is set to 60 below atom %.
Mn necessary in the coating of the present invention is the element of oxidation easier than Ni, adds 1 in coating
During the Mn of more than atom %, at glass substrate, as the ITO of nesa coating, as insulating protective film
The interface of oxide etc. and coating easily form oxide, have and can improve adaptation further
Effect.On the other hand, when adding the Mn more than 25 atom % in coating, oxidative resistance reduces sometimes.
Therefore, in the present invention, the Mn added in coating is set to 1～25 atom %.Become apparent to obtain
The effect above, preferably the addition of Mn is set to the scope of 6～20 atom %.
It addition, the Ag forming conductive layer is not have solid solution region with Ni, Mo, Fe and also will not give birth to
Become the separated element of compound.Herein, the Ni-Mo-Fe alloy without Mn in the coating formed,
Sometimes the adaptation with the Ag of conductive layer reduces.On the other hand, Mn is to have the unit in solid solution region with Ag
Element, is the important element of the effect also with the adaptation improving the Ag with conductive layer.
Mo is to have solid solution region and can easily and the element of Ni alloying for Ni at high-temperature area.
When adding Mo in coating, there is the effect improving etching speed, and it is uniform to go far towards it
The improvement of property.And then, Mo is the element of the effect with the oxidative resistance improving Ni, is for this
Element necessary for bright coating.It improves effect and adds the Mo of 4 more than atom % in coating
Shi Tixian.On the other hand, when adding the Mo more than 40 atom % in coating, against weather reduces.
Therefore, in the present invention, in coating, the scope with 4～40 atom % adds Mo.
It addition, the raising effect of oxidative resistance based on Mo becomes brighter when adding 10 more than atom %
Aobvious, the improvement effect of etch uniformity becomes apparent when adding 15 more than atom %.Therefore, in the present invention
Coating in add Mo be more preferably 10 more than atom %, more preferably 15 more than atom %.
When adding Cu in the coating of the present invention, the improvement effect of etching speed can be obtained.This improvement
Effect embodies when adding the Cu of 1 more than atom % in coating, but when adding more than 25 atom %, close
Conjunction reduces, and oxidative resistance also reduces, and easily produces inequality during etching, the uniformity fall of etching
Low.During it addition, add the Cu more than 25 atom % in coating, etching speed reduces on the contrary sometimes.
Therefore, in the present invention, preferably with the scope interpolation Cu of 1～25 atom % in coating.
During it addition, the present invention adds Fe in coating, the improvement effect of etching, phase can be obtained
Anti-against weather reduces.Therefore, in the present invention, in coating, preferably add the Fe of 5 below atom %,
More preferably 3 below atom %.It should be noted that in the present invention, when improving against weather further,
Fe can not also be added in coating.
It addition, Mo and Mn added in coating is to have the element of relatively Important Relations with etching, if uncommon
The etchant that prestige Ag, Ag alloy is used carries out precision more well, evenly and stably to stacked film
Etching, then preferably comprise the Mo and Mn adding up to 20 more than atom %.It addition, Mo's and Mn is total
When meter is more than 50 atom %, against weather reduces sometimes.Therefore, the preferred Mo of the coating of the present invention and
Amounting to of Mn is added with the scope of 20～50 atom %.
It addition, Mn and Cu is the element reducing oxidative resistance, Mn and Cu totals over 30 atom %
Time, oxidative resistance reduces sometimes.Therefore, the total of preferred Mn and Cu of the coating of the present invention is former with 30
The scope of sub-below % is added.
For the electronic component-use stacking wiring membrane of the present invention, in order to stably obtain low resistance, weatherability
Property, oxidative resistance, be preferably set to 100～1000nm by the thickness of the conductive layer comprising Ag or Ag alloy.
When the thickness of conductive layer is less than 100nm, due to the distinctive electronics of thin film the impact of scattering and resistance value is held
Easily increase.On the other hand, when the thickness of conductive layer is more than 1000nm, forms film and expend the time, or by
On substrate, warpage is easily produced in membrane stress.The thickness of conductive layer more preferably in the range of
200～500nm.
In the conductive layer of the present invention, it is possible to the pure Ag obtaining low resistance value is preferred, but on considering
State against weather, the raising of oxidative resistance and then the reliability such as thermostability, corrosion resistance, it is possible to so that
It is used in Ag the Ag alloy being added with transition metal, semimetal etc..Now, in order to obtain as far as possible
Low resistance, the addition element in Ag preferably amounts to the scope of 5 below atom % to be added.
For the electronic component-use stacking wiring membrane of the present invention, in order to stably obtain low resistance, weatherability
Property, oxidative resistance, be preferably set to 10～100nm by the thickness of coating.Coating is used as basal layer
Time, by thickness is set to more than 10nm, the adaptation with substrate can be improved.It addition, by coating
During as top layer, by thickness is set to more than 20nm, the disappearance of the defect etc. of coating is abundant, permissible
Improve against weather, oxidative resistance.
On the other hand, when the thickness of coating is more than 100nm, the resistance value of coating uprises, with conduction
During layer stackup, it is difficult to obtain low resistance as electronic component-use stacking wiring membrane.Therefore, more preferably will be by
The thickness of coating is set to 20～100nm.
When forming each layer of electronic component-use stacking wiring membrane of the present invention, use the sputtering method of sputtering target material
It is optimal.When forming coating, such as, can apply: use consists of same composition with coating
The sputtering target material method that carries out film forming；The sputtering target material using each element carries out film forming by cosputtering
Method.Furthermore it is also possible to application: use the sputtering target material such as Ni-Mo alloy, Ni-Mn alloy by altogether
The method that sputtering carries out film forming.
The simplification set from the condition of sputtering, the aspect of coating being readily obtained expectation composition,
The sputtering target material consisting of same composition with coating is more preferably used to carry out spatter film forming.
It addition, in sputtering method, the sputtering good and stable in order to carry out efficiency, it is necessary to using sputtering target
It is non magnetic under the room temperature of material, curie point will be set to below room temperature.It should be noted that in the present invention,
" curie point is below room temperature " refers to, when measuring the magnetic characteristic of sputtering target material under room temperature (25 DEG C) is
Non magnetic.
The Ni of one of the main component of coating formation sputtering target material as the present invention is magnetic, because of
This sputtering good and stable in order to carry out efficiency, it is necessary to adjust the kind of addition element and addition so that
Curie point becomes below room temperature.
When only adding Mn in Ni, occupy i.e. to about 15 atom % in Mn scope of solid solution in Ni
In point reduce.On the other hand, when Mn addition in Ni exceedes about 20 atom %, curie point uprises,
During more than 25 atom %, generating compound phase due to phase transformation, curie point is higher than pure Ni, and sputtering target
Material becomes fragile, it is difficult to carries out the such problem of stable processing and also becomes obvious.Therefore, in the present invention, will
The upper limit of the addition of Mn is set to 25 atom %.
During it addition, only add Mn in Ni, it is impossible to making curie point is below room temperature, stable in order to carry out
Sputtering, need the thickness of thinning sputtering target material, produce production efficiency and reduce such new problem.Cause
This, in the present invention, in order to curie point is set to below room temperature, combination is added effective to unmagnetize
The element of Mo, Cu etc and Mn.
In the coating formation sputtering target material of the present invention, for reducing the curie point of the Ni as magnetic
Effect, the Mo as nonmagnetic elements is the highest, when Ni adds the Mo of 4 atom %, curie point become
Below room temperature.It addition, the Ni Mo of solid solution about 30 atom %, solid solution in low temperature region in high-temperature area
Amount reduces.And, when the addition of Mo is more than 30 atom %, generate compound phase, the addition of Mo
When exceeding about 40 atom %, compound increases the most further, and sputtering target material becomes fragile, it is difficult to carry out stable
Processing.It addition, in the characteristic of above-mentioned coating, when the addition of Mo is more than 40 atom %, against weather
Also it is easily reduced.Therefore, in the present invention, the upper limit of the addition of Mo is set to 40 atom %.
Cu is the element of solid solution complete with Ni, and the effect reducing curie point is less than Mo, by adding about 30
Atom %, curie point becomes below room temperature, but in the characteristic of above-mentioned coating, oxidative resistance reduces, because of
The interpolation of this Cu ranges preferably from 1～25 atom %.
When adding the Fe as magnetic, curie point is substantially increased.It addition, Fe with Mo, Mn easily give birth to
Become compound, make sputtering target material brittle, it is therefore preferable that disclosure satisfy that electronic component-use stacking wiring membrane
Etching scope add.Therefore, in the present invention, the Fe added in sputtering target material is preferably set to
5 below atom %, more preferably 3 below atom %.It should be noted that in the present invention, suppression sputtering
The machining of target, ruptured, in the case of breakage by what process caused, it is also possible to do not contain Fe.
More than by, for the coating formation sputtering target material of the present invention, Mn containing 1～25 atom %,
The Mo of 4～40 atom %, containing add up to the aforementioned Mn of 60 below atom %, aforementioned Mo and selected from Cu and
More than one elements in Fe, surplus is made up of Ni and inevitable impurity, curie point is set to room temperature
Below.Thus, the coating formation sputtering target material of the present invention can stably sputter formation coating.
It addition, the kind of addition element and addition are the most, the growing amount of the compound phase in sputtering target material
More increase, machining, joint during owing to manufacturing the large-scale sputtering target material required by FPD purposes and
Easily crack.Therefore, in the present invention, the total amount of Mn and Mo is preferably 20～50 atom %.Wherein,
For reason similar to the above, the total amount that Mo is more preferably set to 10～40 atom %, Cu and Mn is
30 below atom %, Fe are set to the scope of 5 below atom %.It addition, for reason similar to the above,
And it is former further preferably aforementioned Mn, aforementioned Mo, aforementioned Cu and aforementioned Fe to be set to add up to 35～60
The scope of sub-%.
As the manufacture method of the coating formation sputtering target material of the present invention, such as, can also apply as follows
Method: the melting sources of the composition of regulation will be adjusted to and the ingot casting that makes carries out plastic working and forms plate
Shape, implements machining and the method that manufactures sputtering target material；Powder sintering.In powder sintering, example
Material powder is formed as gas atomization can be utilized to manufacture alloy powder；By to be formed as the present invention
The mode of composition is mixed with multiple alloy powder eventually, the mixed-powder of pure metal powder is used as material powder.
As powder sintering, such as can use high temperature insostatic pressing (HIP), hot pressing, discharge plasma sintering,
The pressure sinterings such as extrusion compacting sintering.The coating formation of the present invention with sputtering target material as described above,
The addition of Mn, Mo is many, and plastic working reduces, therefore to stably manufacture the large-scale of FPD
Sputtering target material, the method that the alloy powder with final composition carries out pressure sintering is preferred.
Further, since containing as the Ni of magnetic, it is therefore preferable that to have selected the element of interpolation, occupy
In point carry out pressure sintering for the alloy powder below room temperature.Curie point is that the alloy powder of below room temperature can
It is readily obtained being adjusted to the atomization of the alloy of final composition by use.Alternatively, it is also possible to will fusing
Ingot casting pulverize and make alloy powder.Furthermore it is also possible to application manufactures various alloy powders, to become
The method mixed for the mode of final composition.
During it addition, the mean diameter of alloy powder is less than 5 μm, the impurity in gained sputtering target material increases.
On the other hand, when the mean diameter of alloy powder is more than 300 μm, it is difficult to obtain densely sintered body.
Therefore, the mean diameter of alloy powder is preferably set to 5～300 μm.It should be noted that institute in the present invention
Meaning mean diameter is with based on ball that specify in JIS Z 8901, that obtained by the light scattering method using laser beam
Equivalent diameter represents.
The coating formation sputtering target material of the present invention on the basis of Ni, Mn, Mo of essential elements,
Preferably few except the content as the inevitable impurity in addition to Cu, Fe of addition element, do not damaging this
In the range of the effect of invention, it is also possible to comprise oxygen, nitrogen, carbon, Cr, Ti, Al, Si etc. unavoidably
Impurity.Such as, oxygen, nitrogen are respectively below 1000 mass ppm, and carbon is below 200 mass ppm, Cr,
Ti is below 200 mass ppm, and Al, Si are that 100 mass ppm are such as the following, pure as except gas componant
Degree, more than preferably 99.9 mass %.
Embodiment 1
First, the coating of the sample No.1～12 shown in preparation table 1, sample No.14 composition is formed with spattering
Shoot at the target material.Utilize vacuum fusion method, in the way of becoming each composition, weigh raw material, in vacuum fusion stove
Ingot casting is made by melt-casting legal system.Ingot casting is not carried out plastic working and carry out machining, make straight
Footpath 100mm, the sputtering target material of thickness 5mm.It addition, it is former to utilize same maneuver also to make Ni-16
The sputtering target material of sub-%Mn.
It addition, weigh purity 99.99%, the Mo powder of mean diameter 6 μm and the Ni of mean diameter 70 μm
Powder, utilize cross rotary mixer to carry out being mixed to get mixed-powder, be subsequently filled to internal diameter
133mm, external diameter 139mm, highly 30mm mild steel container in.Further, soft to this at 450 DEG C
Steel vessel carries out the heating of 10 hours, is de-gassed process, then seals, by high temperature insostatic pressing (HIP) (HIP)
Device, 1180 DEG C, 148MPa, be sintered under conditions of 3 hours.It is cooled to, then from HIP
Device takes out, dismantles mild steel container by machining, make diameter 100mm, thickness 5mm
The sputtering target material of Mo-20 atom %Ni.
It addition, the sputtering target material of pure Ag prepares the purity that Mitsubishi Materials Corporation manufactures
Sputtering target material for 4N.
Making each sputtering target material obtained above near SmCo Magnetitum, results verification, except Ni-16 is former
It is not attached to Magnetitum, for non magnetic beyond the sputtering target material of sub-%Mn and Mo-20 atom %Ni.And then,
A part of No.1～No.12 obtained above, the ingot casting of No.14 is put in the case that magnetic characteristic measures,
Use vibration sample type magnetometer (model number: VSM-5) that Riken Densi K. K. manufactures,
Measuring magnetic characteristic under room temperature (25 DEG C), results verification is for non magnetic.
Then, by above-mentioned each sputtering target material solder brazing on backing plate made of copper.It should be noted that sample
The ingot casting of the composition of No.14 cracks when machining, pastes the part ruptured and carries out on backing plate
Solder brazing and use.
On the sputter equipment (model number: CS-200) that ULVAC, Inc. manufacture, installation is above-mentioned respectively spatters
Shoot at the target material, under conditions of Ar atmosphere, pressure 0.5Pa, electric power 500W, implement sputtering test.The most true
Accept, for the sputtering target material of No.14, produce paradoxical discharge, but other any sputtering target materials are the most permissible
Stably sputter.
By Corning Incorporated manufacture 25mm × 50mm glass substrate (goods number:
EagleXG) it is installed on the substrate holder of above-mentioned sputter equipment, forms the coating of thickness 100nm, comment
Valency adaptation and etching.It addition, for sample No.13, former to Ni-16 atom %Mn and Mo-20
The sputtering target material of sub-%Ni carries out cosputtering and forms coating.
The evaluation of adaptation utilizes the method for regulation in JIS K 5400 to carry out.First, in above-mentioned formation
The transparent adhesion band (goods name: transparent beauty) that surface mount Sumitomo 3M Co., Ltd. of coating manufactures,
It is cut into the square square of 2mm with cutter, peels off transparent adhesion band, enter with the presence or absence of the residual of coating
Row is evaluated.The situation that 1 piece of coating is not the most stripped is evaluated as zero, 1～10 piece of situation about being stripped
Be evaluated as △, more than 11 pieces situations about being stripped be evaluated as ×.
In the evaluation of etching, as the etchant of Ag, use nitric acid, phosphoric acid, acetic acid and water mixing
Material.The coating few in order to form side etching, needs to suppress the inequality of etching period, subtracts
Few overetch time, and the suitably suppression wettability to etchant.Each sample be impregnated in above-mentioned etching
Agent, using until whole of coating completely through till the spent time carry out as the suitableeest etching period
Measure.It addition, limit is to be visually confirmed to be etching inequality, limit measure time of passing through of a part of coating with
The time difference of the suitableeest etching period is more clearly to distinguish.It means that time difference the least etching inequality is more
Few.It addition, drip above-mentioned etchant 20 μ l on coating surface, the deployment diameter after measuring 2 minutes.
It means that deployment diameter is the least, more can suppress side etching, more can carry out the etching that precision is high.
The result of evaluation is shown in table 1.
[table 1]
The most like that, as sample No.1, the coating of sample No.2 and the sample of comparative example
The adaptation of the Ag layer of No.17 is low.In addition we know, as the sample No.3 of comparative example by containing 3%
Mn and make adaptation improve, but the most insufficient.
On the other hand, it is thus identified that, the adaptation of the coating of the present invention is greatly improved.
It addition, for etching, the Ag layer as the sample No.17 of comparative example launched less with 43 seconds
By uniform etching.It addition, as sample No.1～No.3 of comparative example, No.15 using Ni-Cu as master
The alloy of body, sample No.16 the coating of Ni-Mo system alloy in the situation of etchant using Ag
The lower time needing more than 100 seconds till etching terminates.In addition understand, as the sample of comparative example
No.1～No.3, the alloy using Ni-Cu as main body of No.15, the Ni-Mo system alloy of sample No.16
Coating is etched into island in the fast part of etching and slow part, produces inequality, therefore, time difference
Also big, etchant is readily expanded.Thus, it can be known that be difficult to etch uniformly, and then side etching becomes
Greatly, the etching that precision is high it is unsuitable for.
On the other hand, may validate that the coating of the present invention was etched equably with less than 60 seconds, etching
Time film few through the time difference started and terminate, the deployment diameter of etchant is the least, and etching is uneven and side
Facet etch is few, can carry out the etching that precision is high.
By estimating above: the coating of the present invention has a high adaptation, and with the Ag of conductive layer
In the case of thin layer stacking, use the etchant of Ag can also carry out thin space and etch uniformly.
Embodiment 2
Using each sputtering target material made in embodiment 1, making film forming the most successively has thickness
The basal layer of 50nm, the Ag conductive layer formed of thickness 200nm, the stacking of top layer of thickness 50nm
The sample of wiring membrane.Further, the adaptation of each sample is evaluated, as the moisture-proof of one of against weather.
It should be noted that above-mentioned basal layer and the layer of coating material that top layer is table 2 composition.
Evaluating of adaptation utilizes method similarly to Example 1 to carry out.Then, 1 piece is not the most shelled
From situation be evaluated as zero, 1～10 piece of situation about being stripped and be evaluated as △, more than 11 pieces situations about being stripped
Be evaluated as ×.
It addition, in the evaluation of moisture-proof, by the stacking wiring membrane made at temperature 85 DEG C, relative humidity
The atmosphere of 85% is placed 100,200,300 hours, measures reflectance.It should be noted that reflection
Rate uses the spectral photometric colour measuring meter (model number: CM2500d) that Konica Minolta, Inc. manufacture.To comment
Valency result is shown in table 2.
[table 2]
The most like that, for sample No.1 and sample No.2 as comparative example, from glass substrate
Face produces film stripping with coating, coating with both interfaces of the Ag layer of conductive layer.It addition, conduct
The sample No.3 of comparative example comprises Mn, and therefore coating is improved with the adaptation of the Ag layer of conductive layer,
But it is peeling between coating and glass substrate face.
On the other hand, may validate that the glass substrate of the electronic component-use stacking wiring membrane of the present invention and lead
The Ag layer both of which of electric layer has high adaptation.
It addition, for moisture-proof, as sample No.1, No.14 of comparative example and sample No.16 along with time
Between process, reflectance reduction.
By may validate that the electronic component-use stacking wiring membrane of the present invention is by the Ag with conductive layer above
Layer stackup, thus have high adaptation and the moisture-proof as one of against weather concurrently.
Embodiment 3
Use the sample of the stacking wiring membrane made in embodiment 2, carry out the evaluation of oxidative resistance.Will be each
Sample carries out the heat treated of 30 minutes in air atmosphere, at a temperature of 200 DEG C～300 DEG C, with reality
Execute example 2 and similarly measure reflectance.Evaluation result is shown in table 3.
[table 3]
On film substrate, need the oxidative resistance to 250 DEG C.The most like that, it is thus identified that,
For sample No.1～sample No.3 and No.14 as comparative example, more than 250 DEG C, reflectance starts
Reduce.
On the other hand, it is known that, for the electronic component-use stacking wiring membrane of the present invention, until 250 DEG C are
Only maintain the high reflectance of more than 50%, there is high oxidative resistance.And then, at 300 DEG C of high temperature,
For the total amount of Mn and Cu sample No.6, the sample No.10 more than 30%, reflectance reduction, therefore,
In order to obtain higher oxidative resistance, the total amount of Mn and Cu is preferably less than 30%.
May insure that from the above, it was confirmed that the stacking wiring membrane of the present invention can be stably formed and conduct electricity
The adaptation of Ag layer of layer, against weather, oxidative resistance, and can the coating of stably Wet-type etching.
Claims (12)
1. an electronic component-use stacking wiring membrane, it is characterised in that including: comprise Ag or Ag alloy
Conductive layer and cover the coating at least one face of this conductive layer, this coating contains 1～25 atom %
Mn, 4～40 Mo of atom %, and containing adding up to the described Mn of 60 below atom %, described Mo
With more than one elements in Cu or Fe, surplus is made up of Ni and inevitable impurity.
Electronic component-use stacking wiring membrane the most according to claim 1, it is characterised in that described quilt
Coating contains the described Mo and described Mn adding up to 20～50 atom %.
Electronic component-use stacking wiring membrane the most according to claim 1, it is characterised in that described quilt
Described Mo that coating contains 10～40 atom %, add up to the described Cu and described Mn of 30 below atom %,
Surplus is made up of Ni and inevitable impurity.
Electronic component-use stacking wiring membrane the most according to claim 1, it is characterised in that described quilt
Described Mo that coating contains 10～40 atom %, add up to 30 below atom % described Cu and described Mn,
The described Fe of 5 below atom %, surplus is made up of Ni and inevitable impurity.
Electronic component-use stacking wiring membrane the most according to claim 1, it is characterised in that described quilt
Coating contains the described Mn of 6～20 atom %, 15～40 described Mo, 1～25 atom % described of atom %
Cu, and containing adding up to the described Mn of 35～60 atom %, described Mo, described Cu and described Fe.
Electronic component-use stacking wiring membrane the most according to claim 1, it is characterised in that described quilt
Coating contains the described Mn of 6～20 atom %, 15～40 described Mo, 1～25 atom % described of atom %
Cu, the described Fe of 3 below atom %, and containing add up to the described Mn of 35～60 atom %, described Mo,
Described Cu and described Fe, surplus is made up of Ni and inevitable impurity.
7. a coating formation sputtering target material, it is characterised in that it is used for being formed coating, described
Coating covers and comprises the conductive layer of Ag or Ag alloy, described sputtering target material contain 1～25 atom % Mn,
The Mo of 4～40 atom %, and containing adding up to the described Mn of 60 below atom %, described Mo and selected from Cu
With more than one elements in Fe, surplus is made up of Ni and inevitable impurity, curie point be room temperature with
Under.
Coating formation sputtering target material the most according to claim 7, it is characterised in that containing total
It is calculated as the described Mo and described Mn of 20～50 atom %.
Coating formation sputtering target material the most according to claim 7, it is characterised in that contain
The described Mo of 10～40 atom %, add up to the described Cu and described Mn of 30 below atom %, surplus by
Ni and inevitable impurity composition.
Coating formation sputtering target material the most according to claim 7, it is characterised in that contain
The described Mo of 10～40 atom %, add up to the described Cu and described Mn of 30 below atom %, 5 atom %
Following described Fe, surplus is made up of Ni and inevitable impurity.
11. coating formation sputtering target materials according to claim 7, it is characterised in that contain
The described Mn of 6～20 atom %, 15～40 described Mo, 1～25 described Cu of atom % of atom %, and contain
Have and add up to the described Mn of 35～60 atom %, described Mo, described Cu and described Fe, surplus by Ni and
Inevitably impurity composition.
12. coating formation sputtering target materials according to claim 7, it is characterised in that contain
The described Mn of 6～20 atom %, 15～40 described Mo, 1～25 described Cu, 3 former of atom % of atom %
The described Fe of sub-below %, and containing adding up to the described Mn of 35～60 atom %, described Mo, described Cu
With described Fe, surplus is made up of Ni and inevitable impurity.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-034793 | 2015-02-25 | ||
| JP2015034793 | 2015-02-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105908139A true CN105908139A (en) | 2016-08-31 |
| CN105908139B CN105908139B (en) | 2018-06-29 |
Family
ID=56745135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610105605.6A Active CN105908139B (en) | 2015-02-25 | 2016-02-25 | Wiring membrane and coating formation sputtering target material is laminated in electronic component-use |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6681019B2 (en) |
| KR (1) | KR101804660B1 (en) |
| CN (1) | CN105908139B (en) |
| TW (1) | TWI583801B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108242276A (en) * | 2016-12-27 | 2018-07-03 | 日立金属株式会社 | Wiring membrane and its manufacturing method and Mo alloy sputtering targets is laminated |
| CN111788332A (en) * | 2018-03-01 | 2020-10-16 | 三菱综合材料株式会社 | Cu-Ni alloy sputtering target |
| CN115637412A (en) * | 2022-09-27 | 2023-01-24 | 芜湖映日科技股份有限公司 | Molybdenum alloy target material and manufacturing process thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018207770A1 (en) * | 2017-05-09 | 2018-11-15 | 三菱マテリアル株式会社 | CuNi ALLOY SPUTTERING TARGET AND CuNi ALLOY POWDER |
| WO2019167564A1 (en) * | 2018-03-01 | 2019-09-06 | 三菱マテリアル株式会社 | Cu-Ni ALLOY SPUTTERING TARGET |
| JP7385370B2 (en) * | 2019-05-07 | 2023-11-22 | 山陽特殊製鋼株式会社 | Ni-based sputtering target and magnetic recording medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1763616A (en) * | 2004-10-12 | 2006-04-26 | 精工爱普生株式会社 | Method of forming a pattern, method of forming wiring, semiconductor device, tft device, electro-optic device |
| JP2006310814A (en) * | 2005-03-29 | 2006-11-09 | Hitachi Metals Ltd | Thin film wiring layer |
| JP2011052304A (en) * | 2009-09-04 | 2011-03-17 | Daido Steel Co Ltd | NiCu ALLOY TARGET MATERIAL FOR Cu ELECTRODE PROTECTIVE FILM |
| CN102956158A (en) * | 2011-08-19 | 2013-03-06 | 日立金属株式会社 | Electronic components using cascading wiring membrane and overlay layer formed by sputtering target material |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6478895B1 (en) * | 2001-04-25 | 2002-11-12 | Praxair S.T. Technology, Inc. | Nickel-titanium sputter target alloy |
| JP2004061844A (en) * | 2002-07-29 | 2004-02-26 | Hitachi Metals Ltd | Ag ALLOY FILM FOR DISPLAY DEVICE, Ag ALLOY REFLECTING FILM FOR DISPLAY DEVICE, FLAT PANEL DISPLAY DEVICE AND SPUTTERING TARGET MATERIAL FOR Ag ALLOY FILM DEPOSITION |
| JP4496518B2 (en) | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | Thin film wiring |
| JP2005079130A (en) * | 2003-08-28 | 2005-03-24 | Hitachi Metals Ltd | Thin film wiring layer |
| WO2005041290A1 (en) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
| JP4730662B2 (en) * | 2005-03-02 | 2011-07-20 | 日立金属株式会社 | Thin film wiring layer |
| WO2010013636A1 (en) * | 2008-07-29 | 2010-02-04 | 株式会社アルバック | Wiring film, thin film transistor, target, wiring film formation method |
| JP5203908B2 (en) * | 2008-12-04 | 2013-06-05 | 新日鉄住金マテリアルズ株式会社 | Ni-Mo alloy sputtering target plate |
| JP2013038393A (en) * | 2011-07-13 | 2013-02-21 | Hitachi Metals Ltd | Multilayer wiring film for electronic component |
-
2016
- 2016-01-19 JP JP2016007880A patent/JP6681019B2/en active Active
- 2016-02-15 TW TW105104218A patent/TWI583801B/en active
- 2016-02-22 KR KR1020160020430A patent/KR101804660B1/en active IP Right Grant
- 2016-02-25 CN CN201610105605.6A patent/CN105908139B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1763616A (en) * | 2004-10-12 | 2006-04-26 | 精工爱普生株式会社 | Method of forming a pattern, method of forming wiring, semiconductor device, tft device, electro-optic device |
| JP2006310814A (en) * | 2005-03-29 | 2006-11-09 | Hitachi Metals Ltd | Thin film wiring layer |
| JP2011052304A (en) * | 2009-09-04 | 2011-03-17 | Daido Steel Co Ltd | NiCu ALLOY TARGET MATERIAL FOR Cu ELECTRODE PROTECTIVE FILM |
| CN102956158A (en) * | 2011-08-19 | 2013-03-06 | 日立金属株式会社 | Electronic components using cascading wiring membrane and overlay layer formed by sputtering target material |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108242276A (en) * | 2016-12-27 | 2018-07-03 | 日立金属株式会社 | Wiring membrane and its manufacturing method and Mo alloy sputtering targets is laminated |
| CN111788332A (en) * | 2018-03-01 | 2020-10-16 | 三菱综合材料株式会社 | Cu-Ni alloy sputtering target |
| CN111788332B (en) * | 2018-03-01 | 2021-08-06 | 三菱综合材料株式会社 | Cu-Ni alloy sputtering target |
| CN115637412A (en) * | 2022-09-27 | 2023-01-24 | 芜湖映日科技股份有限公司 | Molybdenum alloy target material and manufacturing process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6681019B2 (en) | 2020-04-15 |
| TWI583801B (en) | 2017-05-21 |
| TW201631172A (en) | 2016-09-01 |
| JP2016157925A (en) | 2016-09-01 |
| CN105908139B (en) | 2018-06-29 |
| KR101804660B1 (en) | 2017-12-04 |
| KR20160103933A (en) | 2016-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105908139A (en) | Laminated wiring film for electronic components and sputtering target material for forming coating layer | |
| KR101613001B1 (en) | METHOD OF MANUFACTURING Mo ALLOY SPUTTERING TARGET MATERIAL AND Mo ALLOY SPUTTERING TARGET MATERIAL | |
| CN107039097B (en) | Sputtering target material is used in electronic component-use wiring multilayer film and coating formation | |
| CN103173728B (en) | The manufacture method of Mo alloy sputtering target and Mo alloy sputtering target | |
| CN104425416A (en) | Stacked wiring film and manufacturing method thereof, and Ni alloy sputtering target material | |
| CN105986233B (en) | Wiring membrane and coating formation sputtering target material is laminated in electronic component-use | |
| CN104212997B (en) | The film build method of Cu Mn alloy films and Cu Mn alloy sputtering targets and Cu Mn alloy films | |
| JP6292471B2 (en) | Metal thin film for electronic parts and Mo alloy sputtering target material for metal thin film formation | |
| CN104419903B (en) | Coating formation sputtering target material and its manufacture method | |
| KR101597018B1 (en) | METAL THIN FILM AND Mo ALLOY SPUTTERING TARGET MATERIAL FOR FORMING METAL THIN FILM | |
| KR101421881B1 (en) | Membrane laminated wiring for electronic components |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |