CN107039097B - Sputtering target material is used in electronic component-use wiring multilayer film and coating formation - Google Patents
Sputtering target material is used in electronic component-use wiring multilayer film and coating formation Download PDFInfo
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- CN107039097B CN107039097B CN201610866976.6A CN201610866976A CN107039097B CN 107039097 B CN107039097 B CN 107039097B CN 201610866976 A CN201610866976 A CN 201610866976A CN 107039097 B CN107039097 B CN 107039097B
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- 238000000576 coating method Methods 0.000 title claims abstract description 84
- 239000011248 coating agent Substances 0.000 title claims abstract description 83
- 238000005477 sputtering target Methods 0.000 title claims abstract description 45
- 239000013077 target material Substances 0.000 title claims abstract description 41
- 230000015572 biosynthetic process Effects 0.000 title description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 14
- 238000002310 reflectometry Methods 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 238000006467 substitution reaction Methods 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 30
- 229910052748 manganese Inorganic materials 0.000 abstract description 28
- 230000007797 corrosion Effects 0.000 abstract description 22
- 238000005260 corrosion Methods 0.000 abstract description 22
- 230000006978 adaptation Effects 0.000 abstract description 21
- 238000001039 wet etching Methods 0.000 abstract description 21
- 230000003078 antioxidant effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 74
- 239000010949 copper Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 34
- 239000000843 powder Substances 0.000 description 23
- 229910052759 nickel Inorganic materials 0.000 description 21
- 239000000203 mixture Substances 0.000 description 20
- 238000005530 etching Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 229910052750 molybdenum Inorganic materials 0.000 description 16
- 229910045601 alloy Inorganic materials 0.000 description 15
- 239000000956 alloy Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 238000005266 casting Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011435 rock Substances 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005275 alloying Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 230000003796 beauty Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 241001232787 Epiphragma Species 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910017318 Mo—Ni Inorganic materials 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910003286 Ni-Mn Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 231100000740 envenomation Toxicity 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 208000021760 high fever Diseases 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009617 vacuum fusion Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/14—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by a layer differing constitutionally or physically in different parts, e.g. denser near its faces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B1/00—Layered products having a general shape other than plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/061—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
Abstract
Electronic component-use wiring multilayer film is provided and coating forms and uses sputtering target material, it has the novel coating of the conductive layer formed by Al or Al alloy and at least side for covering the conductive layer, it is ensuring adaptation, corrosion resistance, antioxidative meanwhile, it is capable to steadily carry out high-precision wet etching.Electronic component-use wiring multilayer film, it has the coating in the face of the conductive layer formed by Al or Al alloy and at least side for covering the conductive layer, aforementioned covering layer contains the Ni selected from one or more of Mn and Cu element and 30~75 atom %, and surplus is made of Mo and inevitable impurity；And coating forms and uses sputtering target material, contains the Ni selected from one or more of Mn and Cu element and 30~75 atom %, surplus is made of Mo and inevitable impurity.
Description
Technical field
The present invention relates to be applicable to the electronic component-use wiring multilayer film such as touch panel and be used to form this
The sputtering target material of the coating of the covering conductive layer of electronic component-use wiring multilayer film.
Background technique
In recent years, on the glass substrate formed thin-film component liquid crystal display (Liquid Crystal Display: with
Under, referred to as " LCD "), organic el display, in Electronic Paper etc. using the flat display apparatus such as electrophoretic display device (EPD) (flat-panel monitor,
Flat Panel Display: hereinafter referred to as " FPD ") in be combined with and can assign direct operability when seeing its picture
Touch panel, smart phone, tablet computer as novel portable terminal etc. are by commercialization.
For the sensing membrane of the position detection electrode as these touch panels, it is typically used as transparent conductive film
Indium-tin-oxide (Indium Tin Oxide: hereinafter referred to as " ITO ").Moreover, making for the wiring of its bridge-type, lead-out wiring
Be used as with more low-resistance value (hereinafter referred to as low resistance) metal line film, for example by Al the or Al alloy of conductive layer
With the wiring multilayer film of pure Mo, Mo alloy stacking as coating.
As the method for forming above-mentioned wiring multilayer film, it is most suitable for having used the sputtering method of sputtering target material.Sputtering method
It is one kind of physical vapor deposition, compared with other vacuum evaporations, ion plating, can be easily formed a film as the side of large area
Method and be that composition changes effective method small, that can obtain excellent film layer.In addition, being the heat affecting to substrate
Method small, that resin film substrate can also be suitable for.
As the method for the characteristic for improving pure Mo, present inventors have proposed corrosion resistances, the adaptation of heat resistance and substrate
The Mo alloy film (referring to patent document 1) of V, Nb excellent, low-resistance, that 3~50 atom % are added in Mo.
In addition, present inventors have proposed contain 7~30 atom % by the conductive layer formed by Al and as coating
The one kind or two or more element in Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Cu, Si, Ge centroid cubic lattice structure
Ni alloy combination into basilar memebrane, so as to inhibit Al hillock, improve heat resistance.(referring to patent document 2).
In turn, present inventors have proposed use, to Al conductive layer as main component with Mo100-x-y-Nix-Tiy(10
≤ x≤30,3≤y≤20) shown in Mo alloy as coating, so that inoxidizability, resistance to can be improved by Mo, Mo-Nb
Moist (referring to patent document 3).
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2002-190212 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2006-279022 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2013-60655 bulletin
Summary of the invention
Problems to be solved by the invention
For the slimming of the portable terminal devices such as smart phone, tablet computer, the substrate of above-mentioned touch panel uses glass
The mode of glass substrate and the resin film substrate that can be further thinned, also needs above-mentioned coating and resin film
The adaptation of substrate.
In addition, operation panel, the remote controler etc. of the culinary art household electrical appliances as household electrical appliance are operated by wet hand or industry is set
Standby, mobile unit operation panel is operated under high temperature and humidity, and by longer-term is used compared with portable terminal device.
In particular, mobile unit also stops without during people does not operate, can also be placed for a long time in high fever situation, under extremely cold situation, because
This requires wiring multilayer film to further increase highly corrosion resistant.
On the other hand, in the manufacture of above-mentioned touch panel, the wiring multilayer film that is formed on substrate be moved to it is next
When process, it is placed in atmosphere for a long time sometimes.In addition, in the upper installation signal line cable such as portion of terminal of FPD, sometimes big
It is heated in gas.Therefore, wiring multilayer film is required to improve inoxidizability.
In addition, also requiring to use with metal line film for touch panel with the High precision of the LCD as display device
In the etching processed along display pixel with thin width and high-precision.
The research of people according to the present invention, it is thus identified that be suitable for by Mo-V, Mo-Nb alloy of above patent document 1, pure Mo
It is insufficient with the adaptation and inoxidizability of flexible base board etc. when coating, therefore occur the surface of coating sometimes because of oxygen
The problem of changing and leading to discoloration.In addition, it is thus identified that remain people contact after adhere to grease, salt in the case where, in high temperature height
When being placed for a long time in wet atmosphere, corrode sometimes, especially mobile unit is deposited in terms of the long-term reliability of corrosion resistance
In project.
In addition, it is thus identified that, the coating formed by Ni alloy recorded in patent document 2 carry out it is elongated for being processed into
Wiring, square gasket wet etching when, according to the difference of addition element, be easy to produce in real estate etching not
, wiring width generates deviation, therefore there is the new project for the wiring membrane for being difficult to stably obtain narrow width in recent years.
In addition, it is thus identified that, the wiring multilayer film of patent document 3 is after people's contact, the case where remaining grease, the salt of attachment
Under, when being placed for a long time in high temperature and humidity atmosphere, corrode sometimes, especially mobile unit the long-term of corrosion resistance can
By property aspect, there are projects.
The object of the present invention is to provide the coverings of at least side for covering the conductive layer formed by Al or Al alloy
Layer, have can steadily be carried out while ensuring adaptation, corrosion resistance, inoxidizability high-precision wet etching,
Sputtering target material is used in electronic component-use wiring multilayer film and the coating formation of novel coating.
The solution to the problem
Alloy of the present inventor in view of the above subject, to the coating being laminated on the conductive layer formed by Al or Al alloy
Composition has made intensive studies.Finally, it is found that can ensure adaptation, corrosion resistant and adding specific element in Mo
The novel coating that high-precision wet etching is steadily carried out while corrosion, inoxidizability, completes the present invention.
That is, the present invention is a kind of electronic component-use wiring multilayer film, have by conductive layer that Al or Al alloy is formed with
And the coating in the face of at least side of the conductive layer is covered, aforementioned covering layer contains selected from one or more of Mn and Cu element
And 30~75 atom % Ni, surplus is made of Mo and inevitable impurity.
Aforementioned covering layer preferably comprises the aforementioned Mn of the aforementioned Ni and 3~25 atom % of 30~75 atom %, and contains
Amount to the aforementioned Ni and aforementioned Mn less than 80 atom %.
Aforementioned covering layer preferably comprises the aforementioned Cu of the aforementioned Ni and 5~25 atom % of 30~65 atom %, and contains
Amount to the aforementioned Ni and aforementioned Cu less than 75 atom %.
Aforementioned covering layer preferably comprises the aforementioned Mn and aforementioned Cu of 5~40 atom % of total, and containing total less than 75
Aforementioned Cu, aforementioned Mn and the aforementioned Ni of atom %.
A part of the more preferably aforementioned Mo of aforementioned covering layer in the range of amounting to 1~15 atom % by selected from Ti, V, Nb,
One or more of Ta, Cr, W element substitution.
The present invention is that coating forms and uses sputtering target material, be used to form covering in electronic component-use wiring multilayer film by
The coating for the conductive layer that Al or Al alloy is formed, the sputtering target material contain selected from one or more of Mn and Cu element and
The Ni of 30~75 atom %, surplus are made of Mo and inevitable impurity.
Before aforementioned covering layer formation preferably comprises the aforementioned Ni and 3~25 atom % of 30~75 atom % with sputtering target material
Mn is stated, and contains the aforementioned Ni and aforementioned Mn amounted to less than 80 atom %.
Before aforementioned covering layer formation preferably comprises the aforementioned Ni and 5~25 atom % of 30~65 atom % with sputtering target material
Cu is stated, and contains the aforementioned Ni and aforementioned Cu amounted to less than 75 atom %.
Aforementioned covering layer formation preferably comprises the aforementioned Mn and aforementioned Cu of 5~40 atom % of total with sputtering target material, and
Contain the aforementioned Cu, aforementioned Mn and aforementioned Ni amounted to less than 75 atom %.
Aforementioned covering layer formation is with a part of the more preferably aforementioned Mo of sputtering target material in the range of amounting to 1~15 atom %
By selected from one or more of Ti, V, Nb, Ta, Cr, W element substitution.
The effect of invention
The present invention, which is capable of providing, to be laminated with adaptation, corrosion resistance, excellent in oxidation resistance and can steadily carry out high-precision
The novel electronic component-use wiring multilayer film of the coating of the wet etching of degree and the conductive layer formed by Al or Al alloy and
Sputtering target material is used in the formation of its coating.Accordingly, for various electronic components, for example the touch surface formed on resin film substrate
Become highly useful technology for plate, can substantially facilitate electronic component stablizes manufacture, reliability raising.
Detailed description of the invention
Fig. 1 is an example of the schematic cross-section of electronic component-use wiring multilayer film of the invention.
Description of symbols
1. substrate
2. basal layer (coating)
3. conductive layer
4. cap rock (coating)
Specific embodiment
Fig. 1 shows an example of the schematic cross-section of electronic component-use wiring multilayer film of the invention.Electricity of the invention
Subassembly wiring multilayer film has the conductive layer 3 that is formed by Al or Al alloy and at least side for covering the conductive layer 3
The coating in face can be formed on such as substrate 1.In Fig. 1, coating (basal layer 2, cap rock are formed on the two sides of conductive layer 3
4) it, at this point, any one of basal layer 2 or cap rock 4 can also be formed only, can properly select.It should be noted that with this
It, can also be in the other of conductive layer according to the purposes of electronic component when the coating of invention only covers the face of the side of conductive layer
The coating different from composition of the invention is covered on face.
Important feature of the invention is, for electronic component-use wiring multilayer film shown in FIG. 1, by adding in Mo
Ni, Mn, Cu, it was found that while ensuring adaptation, corrosion resistance, inoxidizability, be not susceptible to unevenness in wet etching
Coating.Hereinafter, being explained in detail to electronic component-use wiring multilayer film of the invention.
It should be noted that " adaptation " refers to the removing difficulty or ease with glass substrate, resin film substrate in following explanation
Degree, can be evaluated by the removing of adhesive tape." corrosion resistance " refers to caused by the envenomation under hot and humid environment
The deterioration difficulty of electrical contact can be confirmed by the discoloration of wiring membrane, such as can quantitatively be commented by reflectivity
Valence.In addition, " inoxidizability " refers to, it is difficult with the deterioration of the electrical contact of surface oxidation when being heated under the atmosphere containing oxygen
Yi Du can be confirmed by the discoloration of wiring membrane, such as can quantitatively be evaluated by reflectivity.
It is a feature of the present invention that the coating in the face in at least side for covering the conductive layer formed by Al or Al alloy
In containing the Ni selected from one or more of Mn and Cu element and 30~75 atom %, surplus is by Mo and inevitable impurity
Composition.
The Mo that coating of the invention includes is the electrical contact and wet etching with the ito film as transparent conductive film
And its element of excellent in uniformity, it is on the other hand the element of corrosion resistance, inoxidizability difference.
In the present invention, in order to ensure corrosion resistance and inoxidizability, needing Ni is 30 atom % or more.On the other hand, Ni
When greater than 75 atom %, Ni is easy thermal expansion and is dissipated in conductive layer Al, while increasing the resistance value of wiring multilayer film, reduces wet
Formula etching.Therefore, the Ni for being added to coating of the invention is set as 30~75 atom %.
In addition, Mn be with glass substrate, the excellent adhesion of resin film substrate, the improvement of wet etching it is high,
But additive amount reduces antioxidative element when increasing.
In addition, Cu can improve the adaptation and wet etching with ito film, and reduced and glass base when additive amount
The adaptation of plate and also reduction inoxidizability.In turn, Cu easy thermal expansion in the same manner as Ni is dissipated in conductive layer Al, is easy to increase
The resistance value of wiring multilayer film.
Coating of the invention is by containing Mo, Ni and being selected from one or more of Mn and Cu element, thus ensuring
On the basis of inoxidizability, it can be improved and glass substrate, resin film substrate, the adaptation of ito film, wet etching.With
Under, the reasons why selection Mn and Cu, is illustrated.
Firstly, to selecting Mn to carry out as the case where element added in addition to Mo, Ni for constituting coating of the invention
Explanation.The improvement of adaptation and wet etching that Mn has shows since 3 atom %.On the other hand, Mn is greater than 25
When atom %, inoxidizability is reduced sometimes.Therefore, the additive amount of the Mn in coating is preferably 3~25 atom %.More preferably
7~20 atom %.In addition, the uniformity with ito film contact and wet etching that is having in order to ensure Mo, preferably by Ni and
Mn is set as amounting to less than 80 atom %.
Then, the case where element of the coating for selecting Cu of the invention as composition added in addition to Mo, Ni, is carried out
Explanation.What Cu had shows since 5 atom % with the adaptation of ito film and the improvement of wet etching.On the other hand,
When Cu is greater than 25 atom %, not only reduced with the adaptation of glass substrate, but also inoxidizability also reduces, and is easily wetted erosion
Agent is carved, lateral etch amount increases, and wet etching precision reduces sometimes.Therefore, the additive amount of the Cu in coating is preferably 5~25
Atom %.More preferably 10~20 atom %.At this point, the additive amount of Ni is preferred when considering the thermal diffusion with the Al of conductive layer
It is set as 65 atom % or less.In addition, preferably Ni and Cu are set as amounting to small in order to ensure the uniformity of the Mo wet etching having
In 75 atom %.
Then, to select Mn and Cu as the feelings of the element of addition other than Mo, the Ni for constituting coating of the invention
Condition is illustrated.The total of the Mn of coating and Cu is set as 5 atom % or more, so as to inhibit adaptation and wet etching
The reduction of property.On the other hand, when the total of the Mn and Cu of coating are greater than 40 atom %, inoxidizability, adaptation are reduced sometimes.
It is therefore preferable that containing the Mn and Cu that amount to 5~40 atom %, and contain Ni, Mn, the Cu amounted to less than 75 atom %.In turn
In order to ensure high wet type etching, the total amount of Mn and Cu are more preferably 20 atom % or more.Moreover, the total of Ni, Mn, Cu are into one
Step is preferably 50 atom % or more.
It, can be by a part of above-mentioned Mo with one in Ti, V, Nb, Ta, Cr, W in addition, for coating of the invention
Kind or more element replaced.These selection elements are the high elements of the effect of improvement corrosion resistance, can reduce etching sometimes
Speed.Therefore, displaced amount is preferably set to the range of 1~15 atom % of total.
In order to stably obtain low resistance and corrosion resistance, inoxidizability, electronic component-use multilayer wiring of the invention
The film thickness of the conductive layer formed by Al or Al alloy is preferably set as 100~1000nm by film.The film thickness of conductive layer becomes to be thinner than
When 100nm, due to the influence of the distinctive electron scattering of film, resistance value is easy to increase.On the other hand, the film thickness of conductive layer becomes
When being thicker than 1000nm, the elapsed time for formation film, or warpage is easy to happen in substrate due to membrane stress.The film of conductive layer
Thick preferred range is 200~500nm.
For conductive layer of the invention, when being preferably capable obtaining low-resistance pure Al, it is contemplated that above-mentioned corrosion resistance resists
Oxidisability, and then in view of reliabilities such as heat resistances, it also can be used in Al and be added to transition metal, metalloid
(metalloid) the Al alloy such as.At this point, preferably addition element is set as to amount to 5 originals in order to obtain low resistance as much as possible
Sub- % range below.
In order to stably obtain low resistance and corrosion resistance, inoxidizability, electronic component-use multilayer wiring of the invention
The film thickness of coating is preferably set as 10~100nm by film.When coating is used as basal layer, film thickness is set as 10nm or more, from
And the adaptation with substrate can be improved.In addition, film thickness is set as 20nm or more when coating is used as epiphragma, so as to
The defect etc. for making coating fully disappears, and can be improved corrosion resistance, inoxidizability.
On the other hand, when the film thickness of coating is greater than 100nm, the resistance value of coating is caused to get higher, is laminated with conductive layer
When, it is difficult to obtain low resistance as electronic component-use wiring multilayer film.Therefore, the film thickness of coating is more preferably set as 20~
100nm。
In order to form each layer of electronic component-use wiring multilayer film of the invention, it is most suitable for having used the sputtering method of sputtering target
Suitable.When forming coating, such as following method can also be applicable in: using the sputtering with the composition same composition of coating
The method that target forms a film；Using the sputtering target of each element, Mo, Mo-Ni alloy, Ni-Cu alloy, Ni-Mn alloy etc. splash
The method that material of shooting at the target is formed a film by cosputtering.
From the viewpoint of the condition of sputtering set simplicity, be easy to get expectation composition coating, more preferably use
Spatter film forming is carried out with the sputtering target of the composition same composition of coating.
The present invention is coating formation sputtering target material, in order to obtain above-mentioned coating, and the sputtering target material, which contains, to be selected from
The Ni of one or more of Mn and Cu element and 30~75 atom %, surplus are made of Mo and inevitable impurity.
In Mo, Ni, Mn, Cu as constitution element of the invention, Ni is magnetic substance, but if composition model of the invention
Enclose, then the Curie temperature of coating formation sputtering target material of the invention be room temperature (25 DEG C) below, as non magnetic, therefore energy
Enough common magnetron sputterings are easy to carry out sputtering.Moreover, coating formation of the invention preferably comprises 30 with sputtering target material
The atom % of Ni, Mn3~25 of~75 atom %, and containing amounting to Ni and Mn less than 80 atom %, surplus is by Mo and can not
The impurity composition avoided.
In addition, coating formation of the invention preferably comprises the atom of Ni30~65 original of % and Cu5~25 with sputtering target material
Sub- %, and Ni and Cu are set as amounting to less than 75 atom %, surplus is made of Mo and inevitable impurity.
In addition, coating formation of the invention preferably comprises the Mn and Cu of 5~40 atom % of total with sputtering target material, and
Containing Ni, Mn, the Cu amounted to less than 75 atom %, surplus is made of Mo and inevitable impurity.
In addition, a part of the above-mentioned Mo in coating formation sputtering target material of the invention can also by selected from Ti, V,
One or more of Nb, Ta, Cr, W element substitution.It is preferred that replacement amount to be set as to the range of 1~15 atom % of total.
In equilibrium state diagram, Mo and Ni are that hardly have solution area in the side Mo Ni and have wide solution area in the side Ni
Element, in centre, a large amount of intermetallic compound is presented in composition.In addition, Mo and Mn are in the side Mo with wide solution area and in the side Mn
Also there is the element of wide solution area in high-temperature region.Mo and Cu is in the side Mo, the side Cu hardly with the element of solution area.
In turn, Ni and Mn, Ni and Cu, Mn and Cu are the elements for all having wide solution area.Moreover, Ni and Cu is unlimited solid
Molten, Ni and Mn, Mn and Cu are also the element for the easy alloying being infinitely dissolved in high-temperature region, when including Mn, by phase transformation low
Warm area is easy that intermetallic compound is presented.
By above, although Mo and Cu of the coating formation sputtering target material of the invention comprising being difficult to alloying, pass through
Containing Ni, Mn, can also be alloyed according to composition.In the present invention, adjusted by the membrane property of coating needed for adapting to
Composition, can select the optimal manufacturing method of sputtering target material.Hereinafter, to the system of coating formation sputtering target material of the invention
The method of making is illustrated.
As the manufacturing method of coating formation sputtering target material of the invention, such as also can be used to will be adjusted to advise
Surely the melting sources that form and the ingot casting made implements machining to manufacture method, the powder sintering of sputtering target material.Powder
In sintering process, such as gas atomization can be used to manufacture alloy powder as raw material powder；By multiple alloy powders, pure metal powder
End using become it is of the invention finally form in the way of be obtained by mixing mixed-powder as raw material powder.
As the sintering method of raw material powder, hot isostatic pressing can be used, hot pressing, discharge plasma sintering, squeeze sintering
Equal pressure sinterings.The present invention on the basis of Mo and Cu comprising being difficult to alloying in order to as described above by utilizing Mo and Ni
Composition ratio and easily embody intermetallic compound, reduce plastic processing, such as in order to steadily manufacture touch panel
Large-scale sputtering target material, preferably to the manufacturing method for the alloy powder progress pressure sintering finally formed.
In addition, coating formation of the invention uses sputtering target material due to containing the Ni as magnetic substance, preferably to choosing
The element of addition is determined and curie point room temperature alloy powder below is made to carry out pressure sintering.At this point, above-mentioned alloy powder can
It is readily derived the alloy molten metal finally formed is adjusted to by atomization.Moreover, using atomization with Mo's
Alloying is effective for making the curie point room temperature of alloy powder or less.
In addition, alloy powder can also crush the ingot casting of fusing to make.Alternatively, it is also possible to use various Ni alloys
The method of powder and the mixing of Mo powder；Various alloy powders are manufactured, the method mixed in the way of becoming and finally form.
When the average grain diameter of alloy powder is less than 5 μm, the impurity in gained sputtering target material is caused to increase.On the other hand, it closes
When the average grain diameter at bronze end is greater than 300 μm, it is difficult to obtain highdensity sintered body.It is therefore preferable that being averaged alloy powder
Partial size is set as 5~300 μm.It should be noted that so-called average grain diameter is indicated by providing in JIS Z 8901 in the present invention
The equivalent spherical diameter obtained using the light scattering method of laser.
Can not keep away other than Mo, Ni, Mn, Cu of the preferred main composition element of coating formation sputtering target material of the invention
The content for the impurity exempted from is few, is not damaging in sphere of action of the invention, also can wrap oxygen-containing, nitrogen, carbon, Fe, Al, Si etc. can not
The impurity avoided.Herein, each main composition element is indicated with the atom % relative to main composition element totality, essential element with
Outer inevitable impurity is indicated with the quality ppm of sputtering target material totality.For example, it is preferable to which oxygen, nitrogen are set to 1000 matter
Amount ppm is hereinafter, be set as 200 mass ppm for carbon hereinafter, that Al, Si are set as 100 mass ppm is such as the following.Moreover, of the invention covers
The purity of the metal component totality of cap rock formation sputtering target material is preferably 99.9 mass % or more.
Embodiment 1
Firstly, production is used to form the sputtering target of coating shown in table 1.It should be noted that for No.4, No.5,
No.8, after weighing electrolysis Ni and block-like Mo raw material, oxygen-free copper block, Mn thin slice, Ti block with specified amount, in vacuum fusion furnace
Make ingot casting by melt-casting legal system.
In addition, for No.1~No.3, No.6, No.7, No.9, No.10, No.11, it will be former for nonmagnetic Ni-30
Atomized powder, Mo powder, Cu powder, Mn powder, the Ti powder of sub- % and Mo is mixed in a manner of becoming composition requirement, is filled out
It is charged in the tank of mild steel, is then vacuum-evacuated while heating and is sealed.Then, the tank of sealing is put into heat
In isopressing device, it is sintered under conditions of 900 DEG C, 100MPa, 3 hours and sintered body is made.
With SmCo magnetite close to obtained each ingot casting and each sintered body, as a result confirmed to be not adhered on magnetite.In addition,
A part is put into magnetic characteristic measurement case by each ingot casting obtained above and each sintered body, uses Riken Densi K. K.
The vibration sample type magnetometer (model: VSM-5) of manufacture, measures magnetic characteristic under room temperature (25 DEG C), as a result confirmed to be non-magnetic
Property.
These ingot castings and sintered body are made up to the sputtering target material of diameter 100mm, thickness 5mm of machining.In addition, with
In the purity that the sputtering target material for the pure Al for forming conductive layer has used Mitsubishi Materials Corporation to manufacture
The sputtering target material of 4N.
Then, above-mentioned each coating formation is soldered on backboard made of copper with sputtering target material, is then mounted to ULVAC
The sputtering equipment (model: CS-200) of Co., Ltd.'s manufacture, implements under conditions of Ar atmosphere, pressure 0.5Pa, electrical power 500W
Sputtering test, as a result any sputtering target material is able to carry out sputtering.
Then, the glass substrate (product type: EagleXG) of 25mm × 50mm Corning Co., Ltd. manufactured is pacified
It is attached on the substrate holder of above-mentioned sputtering equipment, sequentially forms the basilar memebrane of thickness 50nm, the conductive layer of the Al of thickness 300nm, thickness
It spends the cap rock of 50nm and makes sample, evaluate adaptation and inoxidizability.In addition, to film substrate and with the film of ito film
Substrate also makes sample with method same as glass substrate.
The evaluation of adaptation is that the method as defined in JIS K 5400 carries out on the glass substrate.Firstly, being existed with cutter
It is divided into the square of 2mm square by the surface of the coating of above-mentioned formation, pastes the transparent of Sumitomo 3M Limited manufacture
Adhesive tape (ProductName: transparent beauty), transparent adhesion band is removed, and with coating remaining, whether there is or not evaluated.1 piece is covered
What cap rock was not also stripped is evaluated as zero, will be stripped 1~10 piece and be evaluated as △, will be stripped 11 pieces or more and is evaluated as
×.In film substrate and film substrate with ito film, transparent adhesion band (ProductName: transparent beauty) is pasted in film surface,
Thereafter, transparent adhesion band is removed, is evaluated as zero for what is be absolutely not stripped, the evaluation of 10% area below will be stripped
For △, will be stripped being evaluated as of area greater than 10% ×.
In addition, for antioxidative evaluation, by each sample in air atmosphere, 150 DEG C~300 DEG C at a temperature of into
Row heat treatment in 30 minutes measures reflectivity and resistance value.Reflectivity uses Konica Minolta, the light splitting of Inc. manufacture
Colorimeter (model: CM2500d) is measured.In addition, resistance value is manufactured using Dia Instruments Co., Ltd.
4 terminals film resiativity meter (model: MCP-T400) measurement.Result after evaluation is shown in table 1.
Table 1
As shown in table 1, as the sample No.1 of comparative example, adaptation is low on film substrate, the film substrate with ITO,
Film stripping occurs.In addition, the sample No.3 as comparative example is partly peeling-off on glass substrate, film substrate.
On the other hand, it is able to confirm that, will be used as the coating of Ni, Mn, Cu containing specified amount in the Mo of example of the present invention
It is not removed in the wiring multilayer film of sample No.4~No.9 of basilar memebrane, there is high adhesion.
In addition we know, as sample No.2, No.3, No.10, No.11, No.12, No.14, No.17 of comparative example, 250
DEG C or more when reflectivity reduce, inoxidizability is poor.In addition, carrying out 300 DEG C for sample No.3, No.10, No.11, No.17
Heating when resistance value increase.
In contrast, the reflection of the sample No.4~No.9, No.13, No.15, No.16 as example of the present invention are able to confirm that
Rate reduction is small, and the increase of resistance value is also small, has high antioxidant.
Embodiment 2
Then, the evaluation of corrosion resistance is carried out using each sample made in embodiment 1.Evaluation for corrosion resistance,
Each sample is placed to 100 hours, 200 hours, 300 hours at 85 DEG C of temperature, in the atmosphere of relative humidity 85%, with implementation
The same method of example 1 measures reflectivity.It the results are shown in table 2.
Table 2
It confirmed as shown in table 2, as sample No.No.1~No.3 of comparative example, No.12, No.14, No.17 in high temperature
When placing 100 hours or more in high wet atmosphere, reflectivity is greatly reduced, poor corrosion resistance.
In contrast, it is able to confirm that, even if sample No.4~No.9, No.13, No.15, No.16 as example of the present invention
It is exposed in high temperature and humidity atmosphere and changes colour also less, also maintain high reflectance after 300 hours, there is highly corrosion resistant.
Embodiment 3
Then, coating is formed on the glass substrate with sputtering target material using the coating formation made in embodiment 1
Monofilm carries out the evaluation of wet etching.As etchant, mixing nitric acid, phosphoric acid, acetic acid and water for Al film is used
The etchant of conjunction.In order to which the few coating of lateral etch is made, needs to inhibit the unevenness of etching period, reducing the overetch time
While suitably inhibit wetability for etchant.Each sample is impregnated in etchant liquid, it will be up to completely through covering
Time consumed by cap rock whole face is measured as accurate etching period (just etching time).In addition, for etching
Unevenness, with visual confirmation and then in order to obtain more specific difference, when measurement penetrates the time of a part of film with accurate etching
Between time difference.This indicates that the time difference is smaller, and etching is uneven fewer.
In addition, the etchant of 20 μm of the film surface dropwise addition in coating, expanding after measurement 2 minutes.This indicates expanding and gets over
It is small, it is more able to suppress lateral etch, is more able to carry out wet etching with high accuracy.By the evaluation result of the wet etching of each sample
It is shown in table 3.
Table 3
About wet etching, for the Al film of the sample No.11 as comparative example at 200 seconds, extension was also small, by equably
Etching.On the other hand, it blisters, and can be etched with 35 seconds short time as the sample No.1 of comparative example.In addition, energy
Enough confirmations, the sample No.10 as comparative example is compared with other coatings, and etching period is up to 156 seconds, and there are the fast of etching
Part and slow part, it is uneven to generate etching, therefore the time difference is also big, etchant is easy extension.It may thus be appreciated that, it is difficult to carry out
Uniform etching, is not suitable for etching with high accuracy.
In contrast, it is known that, sample No.4~No.9, No.13, No.15, No.16 as example of the present invention can be with 75
Second or less carry out wet etching, the time difference is also small, expanding also small.
By being able to confirm that above, the etching unevenness and lateral etch of coating of the invention are few, are able to carry out with high accuracy
Etching.
Claims (4)
1. a kind of electronic component-use wiring multilayer film has the conductive layer formed by Al or Al alloy and covers the conductive layer
At least side face coating, which is characterized in that the Mn and 30~35 that the coating contains 3~25 atom % is former
The Ni of sub- %, surplus are made of Mo and inevitable impurity, and the reflectivity of the coating is 36%~61%.
2. electronic component-use wiring multilayer film according to claim 1, which is characterized in that the Mo's of the coating
A part is in the range for amounting to 1~15 atom % by selected from one or more of Ti, V, Nb, Ta, Cr, W element substitution.
3. a kind of coating, which is formed, uses sputtering target material, which is characterized in that it is used to form in electronic component-use wiring multilayer film
Conductive layer that covering is formed by Al or Al alloy, reflectivity are 36%~61% coating, and the sputtering target material contains 3~25
The Ni of the Mn of atom % and 30~35 atom %, surplus are made of Mo and inevitable impurity.
4. coating according to claim 3, which is formed, uses sputtering target material, which is characterized in that a part of the Mo is amounting to
The range of 1~15 atom % is by selected from one or more of Ti, V, Nb, Ta, Cr, W element substitution.
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| JP7110749B2 (en) * | 2017-07-05 | 2022-08-02 | 日立金属株式会社 | MoNb target material |
| TWI641001B (en) * | 2018-01-22 | 2018-11-11 | 國立屏東科技大學 | Alloy thin film resistor |
| KR102474944B1 (en) * | 2020-04-08 | 2022-12-06 | 주식회사 큐프럼 머티리얼즈 | Manufacturing method of wiring film, wiring film and display device using the same |
| WO2023145440A1 (en) * | 2022-01-31 | 2023-08-03 | 株式会社プロテリアル | Method for producing film wire |
| CN114855131A (en) * | 2022-05-23 | 2022-08-05 | 安泰天龙(北京)钨钼科技有限公司 | Preparation method of molybdenum alloy target, molybdenum alloy target and application |
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| JP6361957B2 (en) * | 2013-03-22 | 2018-07-25 | 日立金属株式会社 | Laminated wiring film for electronic parts and sputtering target material for coating layer formation |
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| CN107039097A (en) | 2017-08-11 |
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| KR102032085B1 (en) | 2019-10-14 |
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| JP6823799B2 (en) | 2021-02-03 |
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