JP6823799B2 - Laminated wiring film for electronic components and sputtering target material for coating layer formation - Google Patents

Description

The present invention relates to a laminated wiring film for electronic components applicable to, for example, a touch panel, and a sputtering target material for forming a coating layer covering the conductive layer of the laminated wiring film for electronic components.

In recent years, flat-panel display devices (flat panel displays) such as liquid crystal displays (Liquid Crystal Display: hereinafter referred to as "LCD") that form thin film devices on a glass substrate, and electrophoretic displays used for organic EL displays and electronic paper. , Flat Panel Display: (hereinafter referred to as "FPD") has been commercialized as a new portable terminal device such as a smartphone or tablet PC that combines a touch panel that can give direct operability while looking at the screen. There is.
Indium tin oxide (hereinafter referred to as "ITO"), which is a transparent conductive film, is generally used for the sensor film as the position detection electrode of these touch panels. The bridge wiring and the lead-out wiring are provided with a metal wiring film having a lower electric resistance value (hereinafter referred to as low resistance), for example, an Al or Al alloy of a conductive layer and a pure Mo or Mo alloy as a coating layer. A laminated wiring film in which the above is laminated is used.

As a method for forming the above-mentioned laminated wiring film, a sputtering method using a sputtering target material is optimal. The sputtering method is one of the physical vapor deposition methods, and is a method that can easily form a large area as compared with other vacuum vapor deposition and ion plating, and has less composition variation, and an excellent thin film layer can be obtained. It is an effective method to be used. In addition, the heat effect on the substrate is small, and this method can be applied to a resin film substrate.

As a means for improving the characteristics of pure Mo, the present inventor has provided a Mo alloy film in which 3 to 50 atomic% of V or Nb is added to Mo, which has excellent corrosion resistance, heat resistance and adhesion to a substrate, and has low resistance. It has been proposed (see Patent Document 1).
In addition, the present inventor has one or more selected from a conductive layer made of Al and Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Cu, Si, and Ge as a coating layer. It is proposed that by combining a Ni alloy having a face-centered cubic lattice structure containing 7 to 30 atomic% of the above elements with the base film, it is possible to suppress the hillock of Al and improve the heat resistance. (See Patent Document 2).
Further, the present inventor has a Mo alloy represented by Mo _100-xy- Ni _x- Ti _y , 10 ≦ x ≦ 30, 3 ≦ y ≦ 20 as a coating layer on a conductive layer containing Al as a main component. It is proposed that the oxidation resistance and moisture resistance can be improved more than Mo and Mo-Nb by adopting. (See Patent Document 3).

JP-A-2002-190212 Japanese Unexamined Patent Publication No. 2006-279022 Japanese Unexamined Patent Publication No. 2013-60655

As the above-mentioned touch panel substrate, a method using a resin film substrate that can be made thinner than the glass substrate is also used in order to make the portable terminal device such as a smartphone or tablet PC thinner, and the coating layer is used. Adhesion with the resin film substrate is also required.
In addition, the operation panels and remote controls of cooking equipment, which are home appliances, can be operated with wet hands, and the operation panels of industrial equipment and in-vehicle equipment can be operated under high temperature and high humidity, as well as for mobile terminal equipment. It is used for a long time in comparison. In particular, in-vehicle devices may be parked outdoors even when not operated by humans and may be left for a long period of time in a high heat condition or an extremely cold condition. Therefore, the laminated wiring film is required to have higher corrosion resistance.
On the other hand, in the above-mentioned manufacturing of the touch panel, the laminated wiring film formed on the substrate may be left in the atmosphere for a long time when moving to the next step. Further, when the signal line cable is attached to the terminal portion of the FPD or the like, it may be heated in the atmosphere. Therefore, the laminated wiring film is required to have improved oxidation resistance.
Further, with the increase in definition of LCD, which is a display device, the metal wiring film for a touch panel is also required to have an etching property for processing with a narrow width along the display pixel and with high accuracy.

According to the study by the present inventor, when the Mo-V, Mo-Nb alloy or pure Mo of Patent Document 1 described above is applied to the coating layer, the adhesion and oxidation resistance to the flexible substrate and the like are not sufficient. , It was confirmed that the problem that the surface of the coating layer is discolored due to oxidation may occur. In addition, it may corrode when left in a high-temperature and high-humidity atmosphere for a long period of time in a state where oils and fats and salts attached after being touched by a person remain, and there is a problem in long-term reliability related to corrosion resistance, especially in in-vehicle equipment. It was confirmed.
Further, the coating layer made of Ni alloy described in Patent Document 2 is likely to cause etching unevenness in the substrate surface depending on the added element when performing wet etching for processing into elongated wiring or a square pad. It was confirmed that there is a new problem that it is difficult to stably obtain a wiring film having a narrow width in recent years because the wiring width varies.
Further, the laminated wiring film of Patent Document 3 may be corroded if it is left in a high temperature and high humidity atmosphere for a long period of time in a state where oils and fats and salts adhering to it after being touched by a person remain, which is particularly related to corrosion resistance in in-vehicle devices. It was confirmed that there is a problem with long-term reliability.

An object of the present invention is to ensure adhesion, corrosion resistance, and oxidation resistance of a coating layer covering at least one of a conductive layer made of Al or an Al alloy, and to enable stable and highly accurate wet etching. It is an object of the present invention to provide a laminated wiring film for electronic parts having a novel coating layer and a sputtering target material for forming a coating layer.

In view of the above problems, the present inventor has diligently studied the alloy composition of the coating layer laminated on the conductive layer made of Al or Al alloy. As a result, we have found a new coating layer that can secure adhesion, corrosion resistance, and oxidation resistance by adding a specific element to Mo, and can perform stable and highly accurate wet etching. The invention has been reached.

That is, according to the present invention, in a laminated wiring film for electronic components having a conductive layer made of Al or an Al alloy and a coating layer covering at least one surface of the conductive layer, the coating layer contains 30 to 75 atomic% of Ni. It is an invention of a laminated wiring film for an electronic component which contains one or more elements selected from Mn and Cu, and the balance is Mo and unavoidable impurities.
The coating layer preferably contains 30 to 75 atomic% of Ni, 3 to 25 atomic% of Mn, and less than 80 atomic% of Ni and Mn in total.
The coating layer preferably contains 30 to 65 atomic% of Ni, 5 to 25 atomic% of Cu, and less than 75 atomic% of Ni and Cu in total.
The coating layer preferably contains the Mn and the Cu in a total of 5 to 40 atomic%, and the Cu, the Mn, and the Ni in a total of less than 75 atomic%.
In the coating layer, it is more preferable that a part of Mo is substituted with one or more elements selected from Ti, V, Nb, Ta, Cr, and W in a total range of 1 to 15 atomic%.

The present invention is a sputtering target material for forming a coating layer covering a conductive layer made of Al or Al alloy in a laminated wiring film for electronic parts, and Ni is selected from 30 to 75 atomic%, Mn and Cu. It is an invention of a sputtering target material for forming a coating layer, which contains one or more elements and the balance is Mo and unavoidable impurities.
The sputtering target material for forming a coating layer preferably contains 30 to 75 atomic% of Ni, 3 to 25 atomic% of Mn, and less than 80 atomic% in total of Ni and Mn.
The sputtering target material for forming a coating layer preferably contains the Ni in an amount of 30 to 65 atomic%, the Cu in an amount of 5 to 25 atomic%, and the Ni and the Cu in a total amount of less than 75 atomic%.
The sputtering target material for forming a coating layer preferably contains the Mn and the Cu in a total of 5 to 40 atomic%, and the Cu, the Mn, and the Ni in a total of less than 75 atomic%.
In the sputtering target material for forming a coating layer, a part of Mo is substituted with one or more elements selected from Ti, V, Nb, Ta, Cr, and W in a total range of 1 to 15 atomic%. Is more preferable.

The present invention is a new laminated wiring for electronic parts in which a coating layer having excellent adhesion, corrosion resistance, and oxidation resistance and capable of performing stable and highly accurate wet etching is laminated with a conductive layer made of Al or an Al alloy. A sputtering target material for forming a film and a coating layer thereof can be provided. This makes it a very useful technique for various electronic components, for example, a touch panel formed on a resin film substrate, and can greatly contribute to stable production and reliability improvement of electronic components.

This is an example of a schematic cross-sectional view of the laminated wiring film for electronic components of the present invention.

FIG. 1 shows an example of a schematic cross-sectional view of the laminated wiring film for electronic components of the present invention. The laminated wiring film for electronic components of the present invention has a conductive layer 3 made of Al or an Al alloy and a coating layer covering at least one surface of the conductive layer 3, and is formed on, for example, a substrate 1. In FIG. 1, where the coating layers (base layer 2 and cap layer 4) are formed on both surfaces of the conductive layer 3, only one of the base layer 2 and the cap layer 4 may be formed and can be appropriately selected. When only one surface of the conductive layer is covered with the coating layer of the present invention, the other surface of the conductive layer is covered with a coating layer having a composition different from that of the present invention depending on the use of the electronic component. You can also.

An important feature of the present invention is that in the laminated wiring film for electronic components shown in FIG. 1, by adding Ni, Mn, and Cu to Mo, adhesion, corrosion resistance, and oxidation resistance are ensured, and unevenness occurs during wet etching. The point is that we have found a coating layer that is less likely to cause. Hereinafter, the laminated wiring film for electronic components of the present invention will be described in detail.
In the following description, "adhesion" refers to the difficulty of peeling from a glass substrate or a resin film substrate, and can be evaluated by peeling with an adhesive tape. "Corrosion resistance" refers to the difficulty of deterioration of electrical contact property due to surface deterioration in a high temperature and high humidity environment, which can be confirmed by discoloration of the wiring film, and can be quantitatively evaluated by, for example, reflectance. In addition, "oxidation resistance" refers to the difficulty in deterioration of electrical contact properties due to surface oxidation when heated in an oxygen-containing atmosphere, which can be confirmed by discoloration of the wiring film, and is quantified by, for example, reflectance. Can be evaluated.

In the present invention, in a coating layer covering at least one surface of a conductive layer made of Al or an Al alloy, Ni is contained in an amount of 30 to 75 atomic%, one or more elements selected from Mn and Cu, and the balance is Mo and unavoidable. It is characterized by being composed of target impurities.

Mo contained in the coating layer of the present invention is an element having excellent electrical contact property and wet etching property with an ITO film which is a transparent conductive film, and its uniformity, but is inferior in corrosion resistance and oxidation resistance. ..
In the present invention, Ni is required to be 30 atomic% or more in order to secure corrosion resistance and oxidation resistance. On the other hand, when Ni exceeds 75 atomic%, Ni tends to be thermally diffused into Al of the conductive layer, increasing the electric resistance value of the laminated wiring film and lowering the wet etching property. Therefore, the amount of Ni added to the coating layer of the present invention is 30 to 75 atomic%.
Further, Mn is an element that has excellent adhesion to a glass substrate or a resin film substrate and has a high effect of improving wet etching properties, but decreases oxidation resistance as the amount added increases.
Further, while Cu can improve the adhesion to the ITO film and the wet etching property, if the amount added is large, the adhesion to the glass substrate is lowered and the oxidation resistance is also lowered. Further, Cu easily diffuses heat into Al of the conductive layer like Ni, and easily increases the electric resistance value of the laminated wiring film.
The coating layer of the present invention contains one or more elements selected from Mn and Cu in addition to Mo and Ni to ensure oxidation resistance, and is used with a glass substrate, a resin film substrate, or an ITO film. Adhesion and wet etching properties can be improved. The reason for selecting Mn and Cu will be described below.

First, a case where Mn is selected as an element to be added in addition to Mo and Ni constituting the coating layer of the present invention will be described. The effect of improving the adhesion and wet etching property of Mn appears from 3 atomic%. On the other hand, if Mn exceeds 25 atomic%, the oxidation resistance may decrease. Therefore, the amount of Mn added to the coating layer is preferably 3 to 25 atomic%. More preferably, it is 7 to 20 atomic%. Further, in order to ensure the contact property of Mo with the ITO film and the uniformity of wet etching, it is preferable that Ni and Mn are less than 80 atomic% in total.

Next, a case where Cu is selected as an element to be added in addition to Mo and Ni constituting the coating layer of the present invention will be described. The effect of improving the adhesion of Cu to the ITO film and the wet etching property appears from 5 atomic%. On the other hand, when Cu exceeds 25 atomic%, the adhesion to the glass substrate is lowered, the oxidation resistance is also lowered, the etchant is easily wetted, the side etching amount is increased, and the wet etching is performed. Accuracy may decrease. Therefore, the amount of Cu added to the coating layer is preferably 5 to 25 atomic%. More preferably, it is 10 to 20 atomic%. At this time, considering the thermal diffusion of the conductive layer with Al, the amount of Ni added is preferably 65 atomic% or less. Further, in order to ensure the uniformity of wet etching possessed by Mo, it is preferable that Ni and Cu are less than 75 atomic% in total.

Next, a case where Mn and Cu are selected as elements to be added in addition to Mo and Ni constituting the coating layer of the present invention will be described. By setting the total amount of Mn and Cu in the coating layer to 5 atomic% or more, deterioration of adhesion and wet etching property can be suppressed. On the other hand, if the total amount of Mn and Cu in the coating layer exceeds 40 atomic%, the oxidation resistance and adhesion may decrease. Therefore, the total content of Mn and Cu is preferably 5 to 40 atomic%, and the total content of Ni, Mn, and Cu is preferably less than 75 atomic%. In order to secure even higher wet etching properties, the total amount of Mn and Cu is more preferably 20 atomic% or more. The total of Ni, Mn, and Cu is more preferably 50 atomic% or more.
Further, in the coating layer of the present invention, a part of the above-mentioned Mo can be replaced with one or more elements selected from Ti, V, Nb, Ta, Cr and W. These selective elements are elements that are highly effective in improving corrosion resistance, but may reduce the etching rate. Therefore, the amount of substitution is preferably in the range of 1 to 15 atomic% in total.

In the laminated wiring film for electronic components of the present invention, the thickness of the conductive layer made of Al or an Al alloy is preferably 100 to 1000 nm in order to stably obtain low resistance, corrosion resistance and oxidation resistance. When the film thickness of the conductive layer is thinner than 100 nm, the electric resistance value tends to increase due to the influence of electron scattering peculiar to the thin film. On the other hand, when the film thickness of the conductive layer is thicker than 1000 nm, it takes time to form the film, and the substrate tends to warp due to the film stress. A more preferable range of the film thickness of the conductive layer is 200 to 500 nm.
Pure Al, which can obtain low resistance, is suitable for the conductive layer of the present invention. However, in addition to the above-mentioned corrosion resistance and oxidation resistance, in consideration of reliability such as heat resistance, transition metals and Al are used. An Al alloy to which a metalloid or the like is added may be used. At this time, it is preferable that the total amount of added elements is in the range of 5 atomic% or less so that the lowest possible resistance can be obtained.

In the laminated wiring film for electronic components of the present invention, the film thickness of the coating layer is preferably 10 to 100 nm in order to stably obtain low resistance, corrosion resistance and oxidation resistance. When the coating layer is applied as the base layer, the adhesion to the substrate can be improved by setting the film thickness to 10 nm or more. Further, when the coating layer is applied as a cap film, by setting the film thickness to 20 nm or more, defects and the like in the coating layer can be sufficiently eliminated, and corrosion resistance and oxidation resistance can be improved.
On the other hand, if the film thickness of the coating layer exceeds 100 nm, the electric resistance value of the coating layer becomes high, and when laminated with the conductive layer, it becomes difficult to obtain low resistance as a laminated wiring film for electronic components. Therefore, the film thickness of the coating layer is more preferably 20 to 100 nm.

A sputtering method using a sputtering target is optimal for forming each layer of the laminated wiring film for electronic components of the present invention. When forming the coating layer, for example, a method of forming a film using a sputtering target having the same composition as the coating layer, a sputtering target of each element, Mo, Mo-Ni alloy, Ni-Cu alloy, etc. A method of forming a film by co-sputtering using a sputtering target material such as a Ni—Mn alloy can also be applied.
From the viewpoint of easy setting of sputtering conditions and easy acquisition of a coating layer having a desired composition, it is more preferable to carry out a sputtering film formation using a sputtering target having the same composition as the coating layer.

In the present invention, in order to obtain the above-mentioned coating layer, Ni is contained in 30 to 75 atomic%, one or more elements selected from Mn and Cu, and the balance is Mo and unavoidable impurities. It is a target material.
In Mo, Ni, Mn, and Cu, which are the constituent elements of the present invention, Ni is a magnetic substance, but within the composition range of the present invention, the Curie temperature of the sputtering target material for forming a coating layer of the present invention is room temperature (25). Since it is below ° C.), that is, it is non-magnetic, it can be easily sputtered by general magnetron sputtering. The sputtering target material for forming a coating layer of the present invention contains 30 to 75 atomic% of Ni and 3 to 25 atomic% of Mn, and contains less than 80 atomic% of Ni and Mn in total, and the balance is Mo and It preferably consists of unavoidable impurities.
Further, the sputtering target material for forming a coating layer of the present invention contains 30 to 65 atomic% of Ni and 5 to 25 atomic% of Cu, and contains less than 75 atomic% of Ni and Cu in total, and the balance is Mo and unavoidable. It is preferably composed of target impurities.
Further, the sputtering target material for forming a coating layer of the present invention contains 5 to 40 atomic% of Mn and Cu in total, and contains less than 75 atomic% of Ni, Mn and Cu in total, and the balance is Mo and inevitable. It preferably consists of impurities.
Further, in the sputtering target material for forming a coating layer of the present invention, a part of the above Mo may be replaced with one or more elements selected from Ti, V, Nb, Ta, Cr and W. The amount to be substituted is preferably in the range of 1 to 15 atomic% in total.

In the equilibrium phase diagram, Mo and Ni are elements in which Ni has almost no solid solution region on the Mo side but has a wide solid solution region on the Ni side, and expresses many intermetallic compounds in the intermediate composition. Further, Mo and Mn are elements having a wide solid solution region on the Mo side and a wide solid solution region on the Mn side in a high temperature region. Mo and Cu are elements that have almost no solid solution region on both the Mo side and the Cu side.
Further, Ni and Mn, Ni and Cu, and Mn and Cu are all elements having a wide solid solution range. Ni and Cu are completely solid-dissolved, and Ni and Mn and Mn and Cu are also elements that are easily alloyed in a high-temperature range. However, when Mn is contained, intermetallic elements are present due to phase transformation. The compound is easily expressed.
From the above, although the sputtering target material for forming a coating layer of the present invention contains Mo and Cu which are difficult to alloy, it can be alloyed depending on the composition by containing Ni and Mn. Is. In the present invention, the optimum production method of the sputtering target material can be selected by the composition adjusted according to the required film characteristics of the coating layer. Hereinafter, a method for producing the sputtering target material for forming a coating layer of the present invention will be described.

Examples of the method for producing a sputtering target material for forming a coating layer of the present invention include a method for producing a sputtering target material by machining an ingot produced by melting a raw material adjusted to a predetermined composition and a powder sintering method. Applicable. In the powder sintering method, for example, an alloy powder is produced by a gas atomization method to obtain a raw material powder, or a mixed powder obtained by mixing a plurality of alloy powders or pure metal powders so as to have the final composition of the present invention is used as a raw material powder. It is possible.
As a method for sintering the raw material powder, it is possible to use pressure sintering such as hot hydrostatic pressure pressing, hot pressing, discharge plasma sintering, and extrusion press sintering. In addition to containing Mo and Cu that are difficult to alloy as described above, the present invention easily expresses intermetallic compounds due to the composition ratio of Mo and Ni and reduces plastic workability. Therefore, for example, large-scale sputtering for a touch panel In order to stably produce the target material, a production method in which the alloy powder having the final composition is pressure-sintered is preferable.
Further, since the sputtering target material for forming a coating layer of the present invention contains Ni, which is a magnetic material, it is preferable to select an element to be added and pressure-sinter the alloy powder having a Curie point of room temperature or lower. .. At this time, the alloy powder can be easily obtained by an atomizing method in a molten alloy having a final composition. Then, alloying with Mo by the atomizing method is effective for making an alloy powder having a Curie point of room temperature or lower.
Further, as the alloy powder, it is also possible to produce by pulverizing the melted ingot. Further, a method of mixing various Ni alloy powders and Mo powders and a method of producing various alloy powders and mixing them so as to have a final composition can also be applied.
If the average particle size of the alloy powder is less than 5 μm, impurities in the obtained sputtering target material will increase. On the other hand, if the average particle size of the alloy powder exceeds 300 μm, it becomes difficult to obtain a high-density sintered body. Therefore, the average particle size of the alloy powder is preferably 5 to 300 μm. The average particle size referred to in the present invention is represented by the equivalent sphere diameter by the light scattering method using laser light specified in JIS Z 8901.

The sputtering target material for forming a coating layer of the present invention preferably contains a small amount of unavoidable impurities other than the main constituent elements Mo, Ni, Mn, and Cu, and oxygen and nitrogen are not impaired within the range of the action of the present invention. , Carbon, Fe, Al, Si and the like may be contained. Here, each major constituent element is represented by atomic% with respect to the entire major constituent elements, and unavoidable impurities other than the major constituent elements are represented by mass ppm in the entire sputtering target material. For example, it is preferable that oxygen and nitrogen are 1000 mass ppm or less, carbon is 200 mass ppm or less, Al and Si are 100 mass ppm or less, and the like. The purity of the entire metal component in the sputtering target material for forming the coating layer of the present invention is preferably 99.9% by mass or more.

First, a sputtering target for forming the coating layer shown in Table 1 was prepared. In addition, No. 4, No. 5, No. In No. 8, an electrolytic Ni, a massive Mo raw material, an oxygen-free copper block, an Mn flake, and a Ti block were weighed to a predetermined amount, and then an ingot was prepared by a melting casting method in a vacuum melting furnace.
In addition, No. 1-No. 3, No. 6, No. 7, No. 9, No. 10, No. No. 11 is a mixture of non-magnetic Ni-30 atomic% Mo atomized powder, Mo powder, Cu powder, Mn powder, and Ti powder so as to have a predetermined composition, filled in a mild steel can, and then heated. While vacuum exhausting, it was sealed. Next, the sealed can was placed in a hot hydrostatic pressure press device and sintered at 900 ° C., 100 MPa for 3 hours to prepare a sintered body.
When the SmCo magnet was brought close to each of the obtained ingots and each sintered body, it was confirmed that the SmCo magnet did not adhere to the magnet. In addition, each ingot and a part of each sintered body obtained above are placed in a case for measuring magnetic characteristics, and a vibrating sample magnetometer (model number: VSM-5) manufactured by Riken Denshi Co., Ltd. is used. When the magnetic characteristics were measured at room temperature (25 ° C.), it was confirmed that the magnetism was non-magnetic.
These ingots and sintered bodies were machined to prepare a sputtering target material having a diameter of 100 mm and a thickness of 5 mm. Further, as the pure Al sputtering target material for forming the conductive layer, a material having a purity of 4N manufactured by Mitsubishi Materials Corporation was used.

Next, after each of the above-mentioned sputtering target materials for forming a coating layer was brazed to a copper backing plate, it was attached to a sputtering apparatus (model number: CS-200) manufactured by ULVAC Co., Ltd., and Ar atmosphere, pressure 0.5 Pa, When the sputtering test was carried out under the condition of a power of 500 W, it was possible to sputter any sputtering target material.
Next, a 25 mm × 50 mm glass substrate (product number: EagleXG) manufactured by Corning Inc. was attached to the substrate holder of the sputtering apparatus, and a base film having a thickness of 50 nm, a conductive layer of Al having a thickness of 300 nm, and a thickness of 50 nm were attached. A sample was prepared by sequentially forming the cap layers of the above, and the adhesion and oxidation resistance were evaluated. For the film substrate and the film substrate with ITO film, samples were prepared in the same manner as the glass substrate.
The adhesion was evaluated on the glass substrate by the method specified by JIS K 5400. First, a 2 mm square square is inserted into the surface of the coating layer formed above with a cutter knife, a transparent adhesive tape (product name: transparent beauty color) manufactured by Sumitomo 3M Ltd. is attached, and the transparent adhesive tape is peeled off. , The presence or absence of residual coating layer was evaluated. Those in which the coating layer was not peeled off by 1 square were evaluated as ◯, those in which 1 to 10 squares were peeled off were evaluated as Δ, and those in which 11 or more squares were peeled off were evaluated as ×. For film substrates and film substrates with ITO film, a transparent adhesive tape (product name: transparent beauty color) is attached to the film surface, and then the transparent adhesive tape is peeled off, and those that did not peel off at all are ○, area of 10% or less. Those with peeled off were evaluated as Δ, and those with an area of more than 10% peeled off were evaluated as ×.
In the evaluation of oxidation resistance, each sample was heat-treated at a temperature of 150 ° C. to 300 ° C. for 30 minutes in an air atmosphere, and the reflectance and electrical resistance were measured. The reflectance was measured using a spectrocolorimeter (model number: CM2500d) manufactured by Konica Minolta Co., Ltd. The electrical resistivity value was measured using a 4-terminal thin film resistivity meter (model number: MCP-T400) manufactured by Dia Instruments. The evaluation results are shown in Table 1.

As shown in Table 1, the sample No. which serves as a comparative example. In No. 1, the adhesion was low on the film substrate and the film substrate with ITO, and the film peeled off. In addition, Sample No. 3, which is a comparative example, was partially peeled off on the glass substrate and the film substrate.
On the other hand, Sample No. using a coating layer containing a predetermined amount of Ni, Mn, and Cu in Mo, which is an example of the present invention, as the base film. 4 to No. It was confirmed that the laminated wiring film of No. 9 did not peel off and had high adhesion.
In addition, sample No. which is a comparative example. 2. No. 3, No. 10, No. 11, No. 12, No. 14, No. At 17, it can be seen that the reflectance decreases at 250 ° C. or higher, and the oxidation resistance is inferior. In addition, sample No. 3, No. 10, No. 11, No. In No. 17, the electric resistance value increased when heating at 300 ° C. was performed.
On the other hand, the sample No. which is an example of the present invention. 4 to No. 9, No. 13, No. 15, No. It was confirmed that No. 16 had high oxidation resistance with little decrease in reflectance and little increase in electrical resistance value.

Next, the corrosion resistance was evaluated using each sample prepared in Example 1. For the evaluation of corrosion resistance, each sample was left in an atmosphere having a temperature of 85 ° C. and a relative humidity of 85% for 100 hours, 200 hours, and 300 hours, and the reflectance was measured by the same method as in Example 1. The results are shown in Table 2.

As shown in Table 2, the sample Nos. No. 1-No. 3, No. 12, No. 14, No. It was confirmed that when the product 17 was left in a high temperature and high humidity atmosphere for 100 hours or more, the reflectance was greatly reduced and the corrosion resistance was inferior.
On the other hand, the sample No. which is an example of the present invention. 4 to No. 9, No. 13, No. 15, No. It was confirmed that No. 16 had little discoloration even when exposed to a high temperature and high humidity atmosphere, maintained a high reflectance even after 300 hours, and had high corrosion resistance.

Next, using the sputtering target material for forming a coating layer produced in Example 1, a single-layer film of the coating layer was formed on a glass substrate, and the wet etching property was evaluated. As the etchant, the nitric acid, phosphoric acid, acetic acid and water used for the Al film were mixed. In order to obtain a coating layer with less side etching, it is necessary to suppress uneven etching time, reduce over-etching time, and appropriately suppress wettability to etchant. Each sample was immersed in the etchant solution, and the time required for the entire surface of the coating layer to completely permeate was measured as the just etching time. Further, the etching unevenness was visually confirmed, and the time difference between the time when a part of the film was permeated and the just etching time was measured in order to make the difference clearer. This means that the smaller the time difference, the smaller the etching unevenness.
In addition, 20 μl of etchant was added dropwise to the film surface of the coating layer, and the spread diameter after 2 minutes was measured. This means that the smaller the spread diameter, the more the side etching can be suppressed, and the more accurate the wet etching can be performed. Table 3 shows the evaluation results of wet etching of each sample.

Regarding the wet etching property, the sample No. which is a comparative example. The Al film of No. 11 was uniformly etched in 200 seconds with little spread. On the other hand, the sample No. which is a comparative example. No. 1 was capable of etching in a short time of 35 seconds while foaming. In addition, sample No. which is a comparative example. In No. 10, it was confirmed that the etching time was 156 seconds, which was longer than that of the other coating layers, and that there were early and late etching portions, and etching unevenness occurred, so that the time difference was large and the etchant was likely to spread. Therefore, it is difficult to perform uniform etching, and it can be seen that it is not suitable for highly accurate etching.
On the other hand, the sample No. which is an example of the present invention. 4 to No. 9, No. 13, No. 15, No. It can be seen that 16 can be wet-etched in 75 seconds or less, the time difference is small, and the spread diameter is small.
From the above, it was confirmed that the coating layer of the present invention has less etching unevenness and side etching, and can perform highly accurate etching.

1. 1. Board 2. Underlayer (coating layer)
3. 3. Conductive layer 4. Cap layer (coating layer)

Claims (8)

In a laminated wiring film for electronic components having a conductive layer made of Al or an Al alloy and a coating layer covering at least one surface of the conductive layer, the coating layer contains 30 to 75 atomic% of Ni and 3 to 25 atoms of Mn. A laminated wiring film for electronic components , which contains less than 80 atomic% of Ni and Mn in total, and the balance is composed of Mo and unavoidable impurities. In a laminated wiring film for electronic components having a conductive layer made of Al or an Al alloy and a coating layer covering at least one surface of the conductive layer, the coating layer contains 30 to 65 atomic% of Ni and 5 to 25 atoms of Cu. A laminated wiring film for electronic components, which contains less than 75 atomic% of Ni and Cu in total, and the balance is composed of Mo and unavoidable impurities. In a laminated wiring film for electronic components having a conductive layer made of Al or an Al alloy and a coating layer covering at least one surface of the conductive layer, the coating layer contains Mn and Cu in a total amount of 5 to 40 atomic%. A laminated wiring film for electronic components, which contains the Cu, the Mn, and Ni in a total of less than 75 atomic%, and the balance is composed of Mo and unavoidable impurities. The coating film is characterized in that a part of Mo is substituted with one or more elements selected from Ti, V, Nb, Ta, Cr, and W in a total range of 1 to 15 atomic%. The laminated wiring film for electronic components according to any one of claims 1 to 3 . A sputtering target material for forming a coating layer covering a conductive layer made of Al or Al alloy in a laminated wiring film for electronic parts, which contains 30 to 75 atomic% of Ni and 3 to 25 atomic% of Mn, and A sputtering target material for forming a coating layer , which contains the Ni and Mn in a total of less than 80 atomic%, and the balance is composed of Mo and unavoidable impurities. A sputtering target material for forming a coating layer covering a conductive layer made of Al or Al alloy in a laminated wiring film for electronic parts, which contains 30 to 65 atomic% of Ni and 5 to 25 atomic% of Cu, and A sputtering target material for forming a coating layer, which contains the Ni and the Cu in a total of less than 75 atomic%, and the balance is composed of Mo and unavoidable impurities. A sputtering target material for forming a coating layer covering a conductive layer made of Al or Al alloy in a laminated wiring film for electronic parts, which contains 5 to 40 atomic% of Mn and Cu in total, and the Cu, said. A sputtering target material for forming a coating layer, which comprises less than 75 atomic% of Mn and Ni in total, and the balance is composed of Mo and unavoidable impurities. Some of the Mo is, Ti, V, Nb, Ta , Cr, one or more elements selected from W, claim 5 or claims characterized in that it is replaced by a range of total 15 atomic% Item 7. The sputtering target material for forming a coating layer according to any one of Items 7 .