KR20190010701A - Laminate wiring layer for an electronic component and a sputtering target material for forming a coating layer - Google Patents

Abstract

The present invention provides a laminate wiring layer for an electronic component, having a conductive layer consisting of Al and Al alloy and a novel coating layer capable of securing adhesiveness, corrosion resistance and oxidation resistance and conducting stably accurate wet etching on a coating layer coating at least one side of the conductive layer, and a sputtering target material for forming a coating layer. Provided is a laminate wiring layer for an electronic component, having a conductive layer consisting of Al and Al alloy and a coating layer coating at least one side of the conductive layer, wherein the coating layer contains 30 to 75 atom% of Ni and one or more element selected from Mn and Cu, and the remainder consists of Mo and inevitable impurities. Also, the sputtering target material for forming a coating layer contains 30 to 75 atom% of Ni and one or more element selected from Mn and Cu, and the remainder consists of Mo and inevitable impurities.

Description

TECHNICAL FIELD [0001] The present invention relates to a laminated wiring film for electronic parts, and a sputtering target material for forming a coating layer. BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

The present invention relates to a sputtering target material for forming, for example, a lamination wiring film for electronic parts applicable to a touch panel or the like and a coating layer covering the conductive layer of the lamination wiring film for electronic parts.

Description of the Related Art [0002] In recent years, flat display devices (flat panel displays, liquid crystal display devices, and the like) such as liquid crystal displays (hereinafter referred to as "LCDs") for forming thin film devices on glass substrates, electrophoretic displays used for organic EL displays, Flat panel display (hereinafter referred to as " FPD "), a smart phone or a tablet PC, which is a new portable terminal device that combines touch panels capable of giving direct operability while viewing the screen.

Indium tin oxide (hereinafter referred to as " ITO "), which is a transparent conductive film, is generally used for the sensor film as the position detecting electrode of these touch panels. As the metal wiring film having a lower electrical resistance value (hereinafter referred to as low resistance) for the bridge wiring and the lead wiring, for example, an Al or Al alloy of a conductive layer and a pure Mo or Mo alloy A laminated wiring film is used.

As a method for forming the above-described laminated wiring film, a sputtering method using a sputtering target material is most suitable. The sputtering method is one of the physical vapor deposition methods, and is a method capable of easily forming a large-area film as compared with other vacuum deposition or ion plating, and is an effective method in which a compositional variation is small and an excellent thin film layer can be obtained. In addition, the thermal influence on the substrate is small, and this method is also applicable to the resin film substrate.

As a means for improving the properties of pure Mo, the present inventors have proposed a Mo alloy film which is excellent in corrosion resistance, heat resistance and adhesion to a substrate, and has a low resistance, in which V or Nb is added to Mo in an amount of 3 to 50 atomic% ( Patent Document 1).

The present inventors have also found that a conductive layer made of Al and at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Cu, Si, (See Patent Document 2), it is possible to suppress the hillock of Al and improve the heat resistance by combining a Ni-alloy having a face-centered cubic lattice structure containing 30 atomic% in the underlying film.

Further, the inventor of the present invention has found that Mo or Mo (Mo) can be obtained by adopting Mo _100-xy -Ni _x -Ti _y , 10? _X? 30 and 3? _Y? 20 Mo alloy as a coating layer on a conductive layer containing Al as a main component. And that oxidation resistance and moisture resistance can be improved more than -Nb (see Patent Document 3).

Japanese Patent Application Laid-Open No. 2002-190212 Japanese Patent Laid-Open No. 2006-279022 Japanese Patent Application Laid-Open No. 2013-60655

In order to reduce the thickness of the portable terminal device such as a smart phone or a tablet PC, the above-mentioned substrate of the touch panel uses a resin film substrate that can be made thinner than a glass substrate. The coating layer also has adhesiveness to the resin film substrate It is becoming necessary.

In addition, the operation panel of the cooking appliance, the remote controller, etc., which are household appliances, are operated by wet hands or the operation panel of the industrial device or the vehicle-mounted device is used for a long period of time in addition to being operated under high temperature and high humidity. Particularly, since the vehicle-mounted apparatus is parked outdoors even when the person is not operating, the laminated wiring film is required to be further improved in corrosion resistance, because the laminated wiring film may be left in a high temperature condition or an extreme situation for a long time.

On the other hand, in manufacturing the above-described touch panel, the laminated wiring film formed on the substrate may be left in the air for a long time when moving to the next step. Further, when the signal line cable is provided to the terminal portion of the FPD or the like, it may be heated in the atmosphere. As a result, the laminated wiring film is required to have improved oxidation resistance.

In addition, with the high definition of the LCD as a display device, a metal wiring film for a touch panel is also required to have a small width and high etching accuracy for processing according to display pixels.

According to the study by the present inventors, when the Mo-V, Mo-Nb alloy or pure Mo of Patent Document 1 described above is applied to the coating layer, adhesion and oxidation resistance with the flexible substrate and the like are insufficient, It is confirmed that there is a case in which a problem of discoloration is caused. In addition, it has been confirmed that there is a problem in long-term reliability of corrosion resistance in a vehicle-mounted device, in particular, in a case where the retained lubricant or salt remaining after contact with a person is left in a high temperature and high humidity atmosphere for a long period of time.

The coating layer made of the Ni alloy described in Patent Document 2 is susceptible to occurrence of etching unevenness in the substrate surface depending on the added element when performing wet etching for processing into narrow or long pads or rectangular pads, It is confirmed that there is a new problem that it is difficult to stably obtain a wiring film of a recent narrow width.

Further, the laminated wiring film of Patent Document 3 may be corroded if it is left in a high-temperature and high-humidity atmosphere for a long period of time in a state where the adhered fines or salts remain after human contact, and in particular, Respectively.

It is an object of the present invention to provide an electronic device having a novel coating layer capable of ensuring adhesion, corrosion resistance and oxidation resistance of a coating layer covering at least one of conductive layers made of Al or an Al alloy, A laminated wiring film for parts and a sputtering target material for forming a coating layer.

In view of the above-described problems, the inventors of the present invention have extensively studied the alloy composition of the coating layer laminated on the conductive layer made of Al or an Al alloy. As a result, we found a new coating layer capable of securing adhesion, corrosion resistance, oxidation resistance, and stable and high-precision wet etching by adding an element specific to Mo, and reached the present invention.

That is, the present invention is a laminated wiring film for electronic parts having a conductive layer made of Al or an Al alloy and a covering layer covering at least one surface of the conductive layer, wherein the covering layer contains 30 to 75 atomic% of Ni, Cu, and the balance of Mo and inevitable impurities.

It is preferable that the coating layer contains 30 to 75 atomic% of Ni and 3 to 25 atomic% of Mn, and further contains the total of Ni and Mn in an amount of less than 80 at%.

It is preferable that the coating layer contains 30 to 65 atomic% of Ni and 5 to 25 atomic% of Cu and further contains the total of Ni and Cu in an amount of less than 75 at%.

It is preferable that the coating layer contains the Mn and the Cu in a total amount of 5 to 40 atomic%, and further contains the total of Cu, Mn and Ni in an amount of less than 75 at%.

It is more preferable that the coating layer is at least one element selected from the group consisting of Ti, V, Nb, Ta, Cr, and W and that the Mo is substituted in a total amount of 1 to 15 atomic percent based on the coating layer.

The present invention is a sputtering target material for forming a coating layer covering a conductive layer made of Al or an Al alloy in a laminated wiring film for electronic parts, and is a sputtering target material containing 30 to 75 atom% Ni, one or more elements selected from Mn and Cu And the remainder is composed of Mo and inevitable impurities. The present invention relates to a sputtering target material for forming a coating layer.

It is preferable that the sputtering target for forming a coating layer contains 30 to 75 atomic% of Ni and 3 to 25 atomic% of Mn, and the total amount of Ni and Mn is less than 80 atomic%.

It is preferable that the sputtering target for forming a coating layer contains 30 to 65 atomic percent of Ni and 5 to 25 atomic percent of Cu and further contains the total of Ni and Cu in an amount of less than 75 atomic%.

It is preferable that the sputtering target for forming a coating layer contains 5 to 40 atomic% of the total of Mn and Cu, and the total amount of Cu, Mn and Ni is less than 75 at%.

The sputtering target material for forming a coating layer is at least one element selected from the group consisting of Ti, V, Nb, Ta, Cr, and W, and the total amount of the Mo is in a range of 1 to 15 atomic% based on the sputtering target for forming a coating layer. Is more preferable.

The present invention relates to a novel laminated wiring film for an electronic part in which a coating layer excellent in adhesion, corrosion resistance and oxidation resistance and capable of stably and precisely performing wet etching is laminated with a conductive layer made of Al or an Al alloy, Of the sputtering target material. This makes it a very useful technique for various electronic components, for example, a touch panel formed on a resin film substrate, and contributes greatly to the stable manufacturing and reliability improvement of electronic components.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing an example of a cross-sectional view of a laminated wiring film for electronic parts of the present invention. Fig.

Fig. 1 shows an example of a cross-sectional view of a laminated wiring film for electronic parts of the present invention. The multilayer wiring film for electronic parts of the present invention has a conductive layer 3 made of Al or an Al alloy and a covering layer covering at least one of the conductive layers 3 and is formed on the substrate 1 . In Fig. 1, the covering layer (the base layer 2 and the cap layer 4) is formed on both surfaces of the conductive layer 3, and either the base layer 2 or the cap layer 4 may be formed, . When only one surface of the conductive layer is covered with the coating layer of the present invention, the other surface of the conductive layer may be covered with a coating layer having a composition different from that of the present invention, depending on the use of the electronic component.

An important feature of the present invention is that by adding Ni, Mn and Cu to Mo in the multilayer wiring film for electronic parts shown in Fig. 1, adhesion, corrosion resistance and oxidation resistance are ensured, and unevenness occurs during wet etching It is difficult to find a coating layer. Hereinafter, the laminated wiring film for electronic parts of the present invention will be described in detail.

In the following description, " adhesion property " means difficulty in peeling from a glass substrate or a resin film substrate, and can be evaluated by peeling in an adhesive tape. "Corrosion resistance" refers to difficulty in deterioration of electrical contact property due to surface alteration under a high temperature and high humidity environment, and can be confirmed by discoloration of the wiring film and quantitatively evaluated by, for example, reflectance. The "oxidation resistance" refers to the difficulty in deteriorating the electrical contact property accompanying surface oxidation when heated in an atmosphere containing oxygen, and can be confirmed by discoloration of the wiring film. For example, it can be evaluated quantitatively by reflectance .

The present invention is a coating layer covering at least one surface of an Al or Al alloy conductive layer, wherein the coating layer contains at least one element selected from the group consisting of 30 to 75 atomic% of Ni, Mn and Cu, It is characterized by being made of impurities.

The Mo contained in the coating layer of the present invention is an element having an excellent electrical contact with the ITO film as the transparent conductive film, wet etching property and uniformity thereof, but is inferior in corrosion resistance and oxidation resistance.

In the present invention, at least 30 atom% of Ni is required to ensure corrosion resistance and oxidation resistance. On the other hand, if Ni exceeds 75 atomic%, Ni is likely to be thermally diffused into Al of the conductive layer, thereby increasing the electrical resistance value of the laminated wiring film and also reducing the wet etching property. Therefore, the amount of Ni added to the coating layer of the present invention is 30 to 75 atomic%.

Further, Mn is excellent in adhesion to a glass substrate or a resin film substrate and has an effect of improving the wet etching property, while it is an element that lowers the oxidation resistance when the addition amount is increased.

Further, Cu can improve the adhesion to the ITO film and the wet etching property, while if the amount is large, the adhesion to the glass substrate is lowered and the oxidation resistance is lowered. Further, Cu is easily diffused thermally to Al of the conductive layer like Ni, thereby making it easy to increase the electrical resistance value of the multilayer wiring film.

The coating layer of the present invention contains at least one element selected from Mn and Cu in addition to Mo and Ni to improve the adhesion to the glass substrate, the resin film substrate or the ITO film, and the wet etching property after securing the oxidation resistance . The reason why Mn and Cu are selected will be described below.

First, the case where Mn is selected as an element to be added in addition to Mo and Ni constituting the coating layer of the present invention will be described. The adhesiveness of Mn and the improvement effect of wet etchability are revealed from 3 atom%. On the other hand, when Mn exceeds 25 at%, oxidation resistance may be lowered. For this reason, the amount of Mn added to the coating layer is preferably 3 to 25 atomic%. And more preferably 7 to 20 atomic%. Further, in order to ensure the contact with the ITO film of Mo and the uniformity of the wet etching, it is preferable that the sum of Ni and Mn is less than 80 at% in total.

Next, the case where Cu is selected as an element to be added in addition to Mo and Ni constituting the coating layer of the present invention will be described. The adhesion of Cu with the ITO film and the improvement effect of the wet etchability are revealed from 5 atom%. On the other hand, when Cu exceeds 25 at%, adhesion to the glass substrate is lowered, oxidation resistance is lowered, and the etchant is more easily wetted, the amount of side etching is increased, and the wet etching precision is lowered . For this reason, the amount of Cu added to the coating layer is preferably 5 to 25 atomic%. And more preferably 10 to 20 atomic%. At this time, in consideration of thermal diffusion of the conductive layer with Al, the amount of Ni added is preferably 65 atomic% or less. Further, in order to ensure the uniformity of the wet etching that Mo has, it is preferable that the sum of Ni and Cu is less than 75 at%.

Next, a case where Mn and Cu are selected as elements to be added in addition to Mo and Ni constituting the coating layer of the present invention will be described. By setting the total amount of Mn and Cu in the coating layer to 5 atomic% or more, it is possible to suppress the adhesion and the deterioration of the wet etching property. On the other hand, if the total of Mn and Cu in the coating layer exceeds 40 at%, the oxidation resistance and the adhesion property may be lowered. Therefore, it is preferable that the total of Mn and Cu is 5 to 40 atomic%, and that the total of Ni, Mn and Cu is less than 75 atomic% in total. In order to ensure higher wet etchability, the total amount of Mn and Cu is more preferably 20 atomic% or more. The total of Ni, Mn and Cu is more preferably 50 atomic% or more.

In the coating layer of the present invention, a part of the Mo may be substituted with at least one element selected from Ti, V, Nb, Ta, Cr and W. These selective elements are elements having a high effect of improving the corrosion resistance, but they sometimes lower the etching rate. Therefore, the amount to be substituted is preferably in the range of 1 to 15 atomic% in total based on the coating layer.

In order to stably obtain the low resistance and the corrosion resistance and the oxidation resistance of the laminated wiring film for electronic parts of the present invention, it is preferable that the film thickness of the conductive layer made of Al or Al alloy is 100 to 1000 nm. If the thickness of the conductive layer is smaller than 100 nm, the electric resistance value tends to increase due to the scattering of electrons peculiar to the thin film. On the other hand, if the thickness of the conductive layer is thicker than 1000 nm, it takes time to form a film, or warpage tends to occur in the substrate due to film stress. A more preferable range of the film thickness of the conductive layer is 200 to 500 nm.

Pure Al capable of obtaining a low resistance is suitable for the conductive layer of the present invention. In addition to the above-mentioned corrosion resistance and oxidation resistance, an Al alloy in which transition metal, semimetal, or the like is added to Al in consideration of reliability such as heat resistance May be used. At this time, in order to obtain a low resistance as much as possible, it is preferable that the additive elements are added in a total amount of 5 atomic% or less.

The laminated wiring film for electronic parts of the present invention preferably has a coating thickness of 10 to 100 nm in order to stably obtain low resistance, corrosion resistance and oxidation resistance. When the coating layer is applied as a base layer, the adhesion to the substrate can be improved by setting the film thickness to 10 nm or more. When the coating layer is applied as a cap film, if the film thickness is 20 nm or more, defects such as defects in the coating layer are sufficiently eliminated and the corrosion resistance and oxidation resistance can be improved.

On the other hand, if the thickness of the coating layer exceeds 100 nm, the electrical resistance value of the coating layer becomes high, and when the conductive layer is laminated, it becomes difficult to obtain a low resistance as a laminated wiring film for electronic parts. For this reason, it is more preferable that the thickness of the coating layer is 20 to 100 nm.

In order to form each layer of the multilayer wiring film for electronic parts of the present invention, a sputtering method using a sputtering target is optimum. The coating layer may be formed by, for example, a method of forming a film using a sputtering target having the same composition as that of the coating layer, or a method of forming a sputtering target of each element, or a method of forming a sputtering target of Mo, a Mo-Ni alloy, a Ni- A sputtering target material such as a sputtering target material may be used to form a film by sputtering.

It is more preferable to form the sputtering target using a sputtering target having the same composition as that of the coating layer from the viewpoint of simplicity of setting the conditions of sputtering and easy obtaining of a coating layer having a desired composition.

The present invention is a sputtering target material for forming a coating layer containing at least one element selected from the group consisting of Ni and 30 to 75 atomic% of Mn and Cu and the balance of Mo and inevitable impurities.

Ni is a magnetic substance in the constituent elements Mo, Ni, Mn and Cu of the present invention. However, in the composition range of the present invention, the Curie temperature of the sputtering target for forming a coating layer of the present invention is not higher than room temperature (25 캜) , It is possible to easily perform sputtering with a general magnetron sputterer. The sputtering target material for forming a coating layer of the present invention contains 30 to 75 atomic% of Ni and 3 to 25 atomic% of Mn, further contains less than 80 atomic% of Ni and Mn in total, and the remainder contains Mo and inevitable impurities .

The sputtering target for forming a coating layer of the present invention contains 30 to 65 atomic% of Ni and 5 to 25 atomic% of Cu, further contains Ni and Cu in a total amount of less than 75 atomic%, the remainder being Mo and inevitable impurities .

The sputtering target material for forming a coating layer of the present invention preferably contains 5 to 40 atomic% of Mn and Cu in total, further contains less than 75 atom% of Ni, Mn and Cu in total, and the balance of Mo and inevitable impurities .

In the sputtering target material for forming a coating layer of the present invention, a part of the Mo may be substituted with at least one element selected from Ti, V, Nb, Ta, Cr and W. The amount to be substituted is preferably in the range of 1 to 15 atomic% in total based on the sputtering target material for forming a coating layer.

In the equilibrium state, Mo and Ni do not have almost a solid solution region on the Mo side but are elements having a wide solid solution region on the Ni side and exhibit a large number of intermetallic compounds in the intermediate composition. Mo and Mn are elements having a wide solid solution area on the Mo side and a wide solid solution area on the Mn side. Mo and Cu are elements having almost no employment region on both the Mo side and the Cu side.

Ni and Mn, Ni and Cu, and Mn and Cu are elements having a wide employment region. Ni and Cu are elements that are electrically charged, and Ni, Mn, Mn and Cu are also alloying elements which are rapidly charged in the high temperature region. However, when Mn is included, intermetallic compounds are likely to be generated in the low temperature region due to the phase transformation.

From the above, although the sputtering target for forming a coating layer of the present invention contains Mo and Cu which are difficult to alloy, it can be alloyed depending on the composition by containing Ni or Mn. In the present invention, an optimal manufacturing method of the sputtering target material can be selected by the composition adjusted to the film characteristics of the coating layer which is required. Hereinafter, a method for producing a sputtering target material for forming a coating layer of the present invention will be described.

As a method for producing a sputtering target material for forming a coating layer of the present invention, for example, a method of producing a sputtering target material by machining an ingot produced by dissolving a raw material adjusted to a predetermined composition, and a powder sintering method are also applicable. In the powder sintering method, it is possible to use, for example, a raw powder by preparing an alloy powder by the gas atomization method, or a mixed powder obtained by mixing a plurality of alloy powder or pure metal powder so as to have the final composition of the present invention .

As the sintering method of the raw material powder, it is possible to use pressure sintering such as hot isostatic pressing, hot press, discharge plasma sintering, extrusion press sintering and the like. In the present invention, in addition to Mo and Cu which are hard to alloy as described above, the intermetallic compound is easily expressed by the composition ratio of Mo and Ni and the plastic workability is lowered. Therefore, for example, In order to stably produce the sputtering target material, a manufacturing method of press-sintering the alloy powder as the final composition is suitable.

Further, in order to contain Ni as a magnetic material, the sputtering target material for forming a coating layer of the present invention is preferably such that an element to be added is selected and the alloy powder having a Curie point at room temperature or lower is pressed and sintered. At this time, the alloy powder can be easily obtained by the atomization method of the alloy melt adjusted to the final composition. Alloying with Mo by the atomization method is effective for making the Curie point into an alloy powder at room temperature or lower.

As the alloy powder, it is also possible to produce the alloy ingot by pulverizing the ingot. In addition, a method of mixing various Ni alloy powders with an Mo powder, or a method of preparing various alloy powders and mixing them so as to have a final composition can be applied.

If the average particle diameter of the alloy powder is less than 5 占 퐉, impurities in the resulting sputtering target material are increased. On the other hand, when the average particle diameter of the alloy powder exceeds 300 탆, it becomes difficult to obtain a high-density sintered body. Therefore, the average particle size of the alloy powder is preferably 5 to 300 mu m. The average particle diameter in the present invention is represented by a spherical equivalent diameter determined by a light scattering method using laser light, as defined in JIS Z 8901.

The content of inevitable impurities other than Mo, Ni, Mn and Cu, which are the main constituent elements, in the sputtering target material for forming a coating layer of the present invention is preferably small, and the content of oxygen, nitrogen, Fe, Al, Si, or the like. Here, the main constituent elements are expressed in atomic% with respect to the total of the main constituent elements, and the inevitable impurities other than the main elements are expressed in terms of ppm by mass in the whole sputtering target material. For example, oxygen and nitrogen are each preferably not more than 1000 mass ppm, carbon is not more than 200 mass ppm, and Al and Si are not more than 100 mass ppm. The purity of the entire metal component in the sputtering target material for forming a coating layer of the present invention is preferably 99.9 mass% or more.

[Example 1]

First, a sputtering target for forming the coating layer shown in Table 1 was prepared. In addition, No. 4, No. 5 and No. 8 were obtained by weighing electrolytic Ni and massive Mo raw material, block of oxygen-free copper, Mn flake and Ti block in a predetermined amount, and then ingot was produced by melt casting in a vacuum melting furnace Respectively.

In addition, the atomized powder of Ni-30 atomic% Mo, which is non-magnetic, the Mo powder and the Cu powder, which are No. 1 to No. 3, No. 6, No. 7, No. 9, No. 9, , Mn powder, and Ti powder were mixed so as to have a predetermined composition, filled in a can of soft drawn steel, and then vacuum-evacuated and sealed by heating. Then, the sealed can was placed in a hot isostatic pressing apparatus and sintered under the conditions of 900 DEG C and 100 MPa for 3 hours to prepare a sintered body.

SmCo magnets were brought close to each ingot and each sintered body obtained, and it was confirmed that they were not attached to magnets. Each ingot obtained in the above manner and a part of each sintered body were placed in a case for measurement of magnetic properties and measured at room temperature (25 占 폚) using a vibrating sample type magnetometer (model number: VSM-5) manufactured by Riken Denshi Co., The magnetic properties were measured, and it was confirmed that the magnet was visceral.

These ingots and sintered bodies were machined to produce a sputtering target material having a diameter of 100 mm and a thickness of 5 mm. As the sputtering target material of pure Al for forming the conductive layer, a material having a purity of 4N manufactured by Mitsubishi Materials Corporation was used.

Subsequently, the above-mentioned sputtering targets for forming coating layers were brazed to a backing plate made of copper, and then the sputtering targets were placed in a sputtering apparatus (model number: CS-200) manufactured by ULVAC, When the sputtering test was performed under the condition of the electric power of 500 W, it was possible to sputter any sputtering target material.

Subsequently, a 25 mm x 50 mm glass substrate (product number: EagleXG) made by Corning Inc. was placed on the substrate holder of the sputtering apparatus, and a base film having a thickness of 50 nm, a conductive layer of Al having a thickness of 300 nm, Cap layers were sequentially formed to prepare samples, and the adhesion and oxidation resistance were evaluated. Also, for the film substrate and the ITO film-adhered film substrate, samples were prepared in the same manner as for the glass substrate.

The adhesion was evaluated on a glass substrate by the method prescribed in JIS K5400. First, on the surface of the coating layer formed above, a square lattice pattern with a side of 2 mm was inserted into a cutter knife, and a transparent adhesive tape (trade name: transparent off-white) manufactured by Sumitomo 3M Ltd. was attached, , And the presence or absence of the coating layer was evaluated. The peeling of the coating layer was evaluated as?, The peeling of 1 to 10 gratings was evaluated as?, And the peeling of 11 gratings or more was evaluated as?. In the film substrate and the ITO film-adhered film substrate, a transparent adhesive tape (trade name: transparent off-white color) was stuck to the surface of the film and then the transparent adhesive tape was peeled off. &Amp; cir &, and peeled areas exceeding 10% were evaluated as & cir &

In the evaluation of the oxidation resistance, each sample was subjected to a heat treatment for 30 minutes at a temperature of 150 ° C to 300 ° C in an air atmosphere, and the reflectance and the electrical resistance value were measured. The reflectance was measured using a spectroscopic colorimeter (Model No. CM2500d) manufactured by Konica Minolta Corporation. The electrical resistance was measured using a thin film resistivity meter (model number: MCP-T400) of the fourth terminal of the diaphragm. The evaluation results are shown in Table 1.

As shown in Table 1, Sample No. 1, which is a comparative example, had low adhesiveness on the film substrate and the ITO-adhered film substrate, and film peeling occurred. Sample No. 3, which was a comparative example, partially peeled off on the glass substrate and the film substrate.

On the other hand, it was confirmed that the laminated wiring films of samples Nos. 4 to 9, in which a coating layer containing a predetermined amount of Ni, Mn and Cu was used for the underlying film of Mo as an example of the present invention, had no peeling and had high adhesion.

It was also found that the samples Nos. 2, 3, 10, 11, 12, 14 and 17, which are comparative samples, . In the samples No. 3, No. 10, No. 11, and No. 17, the electrical resistance value was increased by heating at 300 ° C.

On the other hand, it was confirmed that the samples No. 4 to No. 9, No. 13, No. 15, and No. 16, which are examples of the present invention, exhibited less decrease in reflectance and increase in electrical resistance, .

[Example 2]

Then, each of the samples produced in Example 1 was used to evaluate the corrosion resistance. In the evaluation of the corrosion resistance, the reflectance was measured in the same manner as in Example 1, with each sample being left for 100 hours, 200 hours, and 300 hours in an atmosphere at a temperature of 85 DEG C and a relative humidity of 85%. The results are shown in Table 2.

As shown in Table 2, when the samples No.1 to No.3, No.12, No.14 and No.17 which were Comparative Examples were left in a high-temperature and high-humidity atmosphere for 100 hours or more, the reflectance was greatly lowered, .

On the other hand, samples No. 4 to No. 9, No. 13, No. 15 and No. 16, which are examples of the present invention, exhibited low discoloration even after exposure to a high temperature and high humidity atmosphere, maintained high reflectance even after 300 hours passed, And it was confirmed that it has corrosion resistance.

[Example 3]

Then, using a sputtering target material for forming a coating layer prepared in Example 1, a single-layer film of a coating layer was formed on a glass substrate, and the wet etchability was evaluated. As the etchant, an etchant mixed with nitric acid, phosphoric acid, acetic acid and water used for the Al film was used. In order to form a coating layer with a small side etching, it is necessary to suppress the unevenness of the etching time, to reduce the overetching time, and to appropriately suppress the wettability to the etchant. Each sample was immersed in an etchant solution, and the time taken until the entire surface of the coating layer was completely permeated was measured as a just etch time. In order to obtain a clearer difference while confirming the etching irregularity with the naked eye, the time difference between the time when a part of the film passed through and the just etching time was measured. This means that the smaller the time difference is, the smaller the etching unevenness is.

Further, 20 탆 of an etchant was dropped onto the film surface of the coating layer, and an enlarged diameter after 2 minutes was measured. This means that as the enlarged diameter is smaller, side etching can be suppressed and wet etching with high precision can be performed. The evaluation results of the wet etching of each sample are shown in Table 3.

Regarding the wet etchability, the Al film of the sample No. 11, which is a comparative example, was uniformly etched with a small diameter enlarged at 200 seconds. On the other hand, the sample No. 1 as a comparative example was able to be etched in a short time of 35 seconds while bubbling. In Sample No. 10, which is a comparative example, etching time was longer than that of the other coating layers in 156 seconds, and the etching was quick and slow because of unevenness in etching, and thus the time gap was large and the etchant was liable to be widened . As a result, uniform etching is difficult to perform, and it is not suitable for etching with high precision.

On the other hand, samples No. 4 to No. 9, No. 13, No. 15, and No. 16, which are examples of the present invention, can be subjected to wet etching in 75 seconds or less, .

From the above, it was confirmed that the coating layer of the present invention has less etching unevenness and side etching, and can perform etching with high precision.

1: substrate
2: base layer (coating layer)
3: conductive layer
4: cap layer (coating layer)

Claims (4)

A1 A multilayer wiring film for electronic parts having a conductive layer made of Al or an Al alloy and a covering layer covering at least one surface of the conductive layer, the covering layer comprising 30 to 35 atomic% Ni, 3 to 25 atomic% Mn, , And the balance of Mo and unavoidable impurities, and the reflectance is 36% to 61%. The coating layer according to claim 1, wherein the coating layer contains at least one element selected from the group consisting of Ti, V, Nb, Ta, Cr, and W in a proportion of 1 to 15 atomic% Wherein the laminated wiring film for electronic parts comprises: A sputtering target material for covering a conductive layer made of Al or an Al alloy in a laminated wiring film for electronic parts to form a coating layer having a reflectance of 36% to 61%, wherein the sputtering target material contains 30 to 35 atomic% of Ni, 25 atomic%, and the balance of Mo and inevitable impurities. 4. The method according to claim 3, wherein a part of the Mo is at least one element selected from Ti, V, Nb, Ta, Cr and W, and the total amount of the Mo is in the range of 1 to 15 atomic% based on the sputtering target for forming a coating layer Wherein the sputtering target material is substituted with a rare earth element.

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