JPH10121232A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPH10121232A JPH10121232A JP8270784A JP27078496A JPH10121232A JP H10121232 A JPH10121232 A JP H10121232A JP 8270784 A JP8270784 A JP 8270784A JP 27078496 A JP27078496 A JP 27078496A JP H10121232 A JPH10121232 A JP H10121232A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- sputtering
- plate
- blocks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は薄膜形成を行なうた
めのスパッタリング装置用のスパッタリングターゲット
に関する。詳しくは複数個に分割されたターゲットを組
合せてバッキングプレートに接合して用いる分割接合型
のスパッタリングターゲットに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target for a sputtering apparatus for forming a thin film. More particularly, the present invention relates to a split-joining type sputtering target used by combining a plurality of split targets and joining them to a backing plate.
【0002】[0002]
【従来の技術】従来より、基板上に薄膜を形成させる方
法としてマグネトロン型スパッタリング装置が広く用い
られている。マグネトロン型スパッタリング装置は、真
空槽中に不活性カズ、例えばArガス等の希ガスを導入
し、ターゲットに負電位を与えてグロー放電を発生さ
せ、真空槽中で生成したAr+ イオンをターゲットに衝
突させてターゲットをスパッタリングし、これにより放
出される被スパッタ粒子を、ターゲットと対向して設け
た(陽極上の)基板上に成膜(堆積)させて薄膜を形成
させる成膜装置である。2. Description of the Related Art Conventionally, a magnetron type sputtering apparatus has been widely used as a method for forming a thin film on a substrate. The magnetron type sputtering apparatus introduces an inert gas, for example, a rare gas such as Ar gas into a vacuum chamber, applies a negative potential to the target to generate a glow discharge, and uses the Ar + ions generated in the vacuum chamber as a target. This is a film forming apparatus in which a target is sputtered by collision, and particles to be sputtered are formed (deposited) on a substrate (on an anode) provided facing the target to form a thin film.
【0003】マグネトロンスパッタリング装置におい
て、金属材料ターゲットは通常、バッキングプレート
(主に銅、Al、SUS等からなる)に接着剤(In、
Sn等)でボンディングされた構造とされている。昨今
の被膜材料の面積の拡大に伴い、スパッタリング装置が
益々大型化し、それに用いるスパッタリングターゲット
も大型化しているのが現状であり、ターゲットが大きく
なるにつれターゲットを分割し、分割したブロックをバ
ッキングプレート上にタイル状に並べて接着する分割接
合型ターゲットが採用されるようになった。In a magnetron sputtering apparatus, a metallic material target is usually attached to a backing plate (mainly made of copper, Al, SUS, etc.) with an adhesive (In, In).
Sn, etc.). With the recent increase in the area of the coating material, the sputtering equipment has become larger and larger, and the sputtering target used for it has also become larger.The target is divided as the target becomes larger, and the divided blocks are placed on the backing plate. In this case, a split junction type target that is arranged in a tile shape and adhered has been adopted.
【0004】[0004]
【発明が解決しようとする課題】分割接合型ターゲット
を用いてスパッタリングを行なった際、スパッタリング
を継続すると、ターゲット材のエロージョンの進行によ
り、ターゲットブロックの接合部で、下地のバッキング
プレートが露出し、スパッタされてしまうことが懸念さ
れ、そのためにターゲットブロックの接合部に角度を設
けオーバーラップするような形で下地の露出を防止する
タイプも採用されている(図2、図3参照)。しかし、
このような対策を行なっても十分な解決策とは云えなか
った。When sputtering is performed using a split junction type target, if sputtering is continued, the backing plate of the base is exposed at the junction of the target block due to the progress of erosion of the target material. There is a concern that the substrate may be sputtered. For this reason, a type that prevents the exposure of the base by overlapping the target block at an angle is used (see FIGS. 2 and 3). But,
Even if such measures were taken, it was not a sufficient solution.
【0005】[0005]
【課題を解決するための手段】本発明者等は上記した分
割接合型ターゲットの問題点に鑑み、ターゲットブロッ
クの接合部における下地のバッキングプレート材が露出
せず、従ってバッキングプレートのスパッタされること
のない分割結合型ターゲットにつき鋭意検討を重ねた結
果、ターゲットブロックとターゲットブロックとの継ぎ
目部分を特殊な構造とすることにより問題点が解決でき
ることを見出し、本発明を完成した。本発明の要旨は、
複数個のターゲットブロックを接着剤によりバッキング
プレートに接合した分割接合型スパッタリングターゲッ
トにおいて、ターゲットブロックとターゲットブロック
との継ぎ目のバッキングプレート上面に電気絶縁性物質
又はターゲットと同質の金属材料からなる保護材を設け
たことを特徴とする分割接合型スパッタリングターゲッ
トに存する。以下、本発明の一例につき図面を用いて説
明する。SUMMARY OF THE INVENTION In view of the above-mentioned problems of the split junction type target, the present inventors have found that the underlying backing plate material at the joining portion of the target block is not exposed, and that the backing plate is sputtered. As a result of intensive studies on a split-connection type target having no structure, it was found that the problem could be solved by forming a special joint at the joint between the target blocks, and the present invention was completed. The gist of the present invention is:
In a split-joining type sputtering target in which a plurality of target blocks are joined to a backing plate with an adhesive, a protective material made of an electrically insulating substance or a metal material of the same quality as the target is provided on the upper surface of the backing plate at the joint between the target blocks. A split junction type sputtering target is provided. Hereinafter, an example of the present invention will be described with reference to the drawings.
【0006】図1〜図3は本発明の分割接合型スパッタ
リングターゲットの一例を示すものであり、1はターゲ
ットブロック、2はバッキングプレート、3はターゲッ
トブロックとバッキングプレートを接合するのに用いら
れる接着剤、4は保護材をそれぞれ示す。ターゲットブ
ロック1としては、スパッタリングによって基板上に成
膜する膜質の種類によって種々の金属材料が選択され、
その金属の種類は特に限定されるものではなく、例えば
Al、Ti、V、Cr、Mn、Fe、Co、Ni、C
u、Zn、Ge、Zr、Nb、Mo、Ru、Rh、P
d、Ag、Hf、Ta、W、Re、Os、Ir、Pt、
Au、Thなどの金属、C、Si、Se、Te、Geな
どの非金属、及びそれらの化合物が挙げられる。バッキ
ングプレート2上に接合するターゲットブロック1同志
の継ぎ合わせは同一種類(同じ金属材質)のターゲット
ブロック1を複数個継ぎ合わせて接合してもよいし、ま
た異なった種類(異なった金属材質)のターゲットブロ
ック1をバッキングプレート2上に継ぎ合わせて接合し
てもよい。FIGS. 1 to 3 show an example of a split junction type sputtering target of the present invention, wherein 1 is a target block, 2 is a backing plate, and 3 is an adhesive used for joining the target block and the backing plate. Agent 4 indicates a protective material. Various metal materials are selected for the target block 1 depending on the type of film quality to be formed on the substrate by sputtering.
The type of the metal is not particularly limited. For example, Al, Ti, V, Cr, Mn, Fe, Co, Ni, C
u, Zn, Ge, Zr, Nb, Mo, Ru, Rh, P
d, Ag, Hf, Ta, W, Re, Os, Ir, Pt,
Examples include metals such as Au and Th, nonmetals such as C, Si, Se, Te, and Ge, and compounds thereof. The target blocks 1 to be joined on the backing plate 2 may be joined together by joining a plurality of target blocks 1 of the same type (the same metal material) or different types (different metal materials). The target block 1 may be joined and joined on the backing plate 2.
【0007】また、バッキングプレート2としては熱伝
導率の大きい材質のものが用いられ、例えば純銅、銅と
亜鉛、ニッケル、マンガン等の合金、ステンレス等があ
げられる。バッキングプレート2の形状としては特に制
限を設けるものではないが、一般に角形、丸形等の形状
のものが好適に用いられる。接着剤(ボンディング材)
3としてはインジウム、スズ等の低融点金属、半田のよ
うな合金、ロウ材、樹脂などが用いられる。保護材4と
してはスパッタリングされ難い物質であるガラス、陶
板、セラミックス板等の無機質の電機絶縁性物質、テフ
ロンやポリイミドのような耐熱性のある樹脂シートなど
の有機質の電機絶縁性物質が好適に用いられるが、スパ
ッタリングされても問題の少ないターゲットと同質の金
属材料でも良い。The backing plate 2 is made of a material having a high thermal conductivity, for example, pure copper, an alloy of copper and zinc, nickel, manganese or the like, stainless steel or the like. The shape of the backing plate 2 is not particularly limited, but generally a square or round shape is suitably used. Adhesive (bonding material)
As 3, a low melting point metal such as indium or tin, an alloy such as solder, a brazing material, a resin, or the like is used. As the protective material 4, inorganic electric insulating materials such as glass, porcelain plate and ceramics plate, which are hardly sputtered, and organic electric insulating materials such as heat-resistant resin sheets such as Teflon and polyimide are preferably used. However, a metal material of the same quality as the target which causes few problems even if sputtered may be used.
【0008】保護材4の大きさとしてはバッキングプレ
ート2がターゲットブロックの継ぎ合わせ接合面から露
出しない大きさであれば特に制限されるものではなく、
通常5〜30mm幅の板状又はシート状のものが用いら
れる。また保護材4の厚みもスパッタリング中にバッキ
ングプレート2がその表面に露出しない厚さであれば特
に制限されるものではないが、通常50μm以上、望ま
しくは100μm〜1000μmの範囲である。また、
その取付構造も、図に示すようにバッキングプレート2
の表面に埋設するもの(図1)、ターゲットブロック間
に挟むもの(図2)、ターゲットブロック1とバッキン
グプレート2との間に挟持するもの(図3)等任意であ
る。保護材4のバッキングプレート上面への取り付けは
通常、接着剤や螺子等により行なわれる。この場合の接
着剤や螺子も電気絶縁性物質、例えばアルミナペースト
等からなる接着剤やセラミックからなる螺子等、もしく
はターゲットと同質の金属材料からなる螺子等が好適に
用いられる。また、接着剤や螺子等による取りつけ手段
のほか、電気絶縁性物質を液状とし、塗布した後固化さ
せて被覆する手段を用いても良い。The size of the protective material 4 is not particularly limited as long as the size of the backing plate 2 is not exposed from the jointing surface of the target block.
Usually, a plate or sheet having a width of 5 to 30 mm is used. The thickness of the protective material 4 is not particularly limited as long as the backing plate 2 is not exposed to the surface during sputtering, but is usually 50 μm or more, preferably 100 μm to 1000 μm. Also,
As shown in the figure, the mounting structure of the backing plate 2
, Embedded between the target blocks (FIG. 1), interposed between the target blocks (FIG. 2), and interposed between the target block 1 and the backing plate 2 (FIG. 3). The attachment of the protection member 4 to the upper surface of the backing plate is usually performed with an adhesive or a screw. In this case, an adhesive or a screw made of an electrically insulating material, for example, an adhesive made of an alumina paste or the like, a screw made of a ceramic, or a screw made of a metal material of the same quality as the target is preferably used. In addition to the mounting means using an adhesive, a screw, or the like, a means may be used in which the electrically insulating substance is made into a liquid state, applied, solidified, and covered.
【0009】[0009]
実施例1 寸法130mm×300mm(厚さ6mm)のターゲッ
トブロックを2枚継ぎ、寸法150mm×650mm
(厚さ10mm)の銅のバッキングプレートに図1に示
す構造で接合し、寸法130mm×600mm(厚さ6
mm)の分割接合型ターゲットを作成した。なお、保護
材4は幅10mm、厚さ1mmのガラスを使用した。ボ
ンディング材(接着剤)としてはインジウムを用いた。
上記の分割接合型ターゲットを用いてスパッタリング成
膜を行なったところ下地のバッキングプレートの露出が
なくなったので従来の場合、約50%しか使用できなか
ったターゲットが約80%まで使用可能となりターゲッ
トの使用効率が向上した。Example 1 Two target blocks each having a size of 130 mm × 300 mm (thickness: 6 mm) were joined, and a size of 150 mm × 650 mm was connected.
(Thickness 10 mm) was bonded to a copper backing plate with the structure shown in FIG.
mm). In addition, the protective material 4 used glass 10 mm in width and 1 mm in thickness. Indium was used as a bonding material (adhesive).
When a sputtering film was formed using the above-mentioned split junction type target, the underlying backing plate was no longer exposed. In the conventional case, only about 50% of the target could be used. Efficiency improved.
【図1】本発明のターゲットの一例を示す縦断面図。FIG. 1 is a longitudinal sectional view showing an example of a target of the present invention.
【図2】本発明のターゲットの一例を示す縦断面図。FIG. 2 is a longitudinal sectional view showing an example of the target of the present invention.
【図3】本発明のターゲットの一例を示す縦断面図。FIG. 3 is a longitudinal sectional view showing an example of the target of the present invention.
1 ターゲットブロック 2 バッキングプレート 3 接着剤 4 保護プレート 1 Target block 2 Backing plate 3 Adhesive 4 Protection plate
Claims (1)
よりバッキングプレートに接合した分割接合型スパッタ
リングターゲットにおいて、ターゲットブロックとター
ゲットブロックとの継ぎ目のバッキングプレート上面に
電気絶縁性物質又はターゲットと同質の金属材料からな
る保護材を設けたことを特徴とする分割接合型スパッタ
リングターゲット。1. A split bonding type sputtering target in which a plurality of target blocks are bonded to a backing plate with an adhesive, an electrically insulating substance or a metal material of the same quality as the target is formed on the upper surface of the backing plate at the joint between the target blocks. A split junction type sputtering target characterized by comprising a protective material comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8270784A JPH10121232A (en) | 1996-10-14 | 1996-10-14 | Sputtering target |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8270784A JPH10121232A (en) | 1996-10-14 | 1996-10-14 | Sputtering target |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10121232A true JPH10121232A (en) | 1998-05-12 |
Family
ID=17490957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8270784A Pending JPH10121232A (en) | 1996-10-14 | 1996-10-14 | Sputtering target |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10121232A (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003027227A (en) * | 2001-07-23 | 2003-01-29 | Dainippon Printing Co Ltd | Sputtering target |
EP1728892A2 (en) * | 2005-05-31 | 2006-12-06 | Applied Materials, Inc. | Bonding of sputtering target to target holder |
JP2006328522A (en) * | 2005-05-24 | 2006-12-07 | Applied Materials Inc | Multiple target tiles with complementary beveled edges forming slanted gap therebetween |
WO2006127221A3 (en) * | 2005-05-24 | 2007-02-01 | Applied Materials Inc | Sputtering target tiles having structured edges separated by a gap |
WO2006132916A3 (en) * | 2005-06-06 | 2007-12-06 | Thermal Conductive Bonding Inc | Large area elastomer bonded sputtering target and method for manufacturing |
JP2011190527A (en) * | 2010-02-17 | 2011-09-29 | Tosoh Corp | Sputtering target |
WO2012063524A1 (en) * | 2010-11-08 | 2012-05-18 | 三井金属鉱業株式会社 | Divided sputtering target and method for producing same |
WO2012063523A1 (en) * | 2010-11-08 | 2012-05-18 | 三井金属鉱業株式会社 | Divided sputtering target and method for producing same |
GB2485603A (en) * | 2010-11-22 | 2012-05-23 | Plastic Logic Ltd | Segmented target for vapour deposition process |
WO2012121028A1 (en) * | 2011-03-04 | 2012-09-13 | シャープ株式会社 | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
JP2013185160A (en) * | 2012-03-06 | 2013-09-19 | Jx Nippon Mining & Metals Corp | Sputtering target |
CN103403217A (en) * | 2011-03-03 | 2013-11-20 | 应用材料公司 | Method and apparatus for forming a cylindrical target assembly |
US20130306466A1 (en) * | 2012-05-18 | 2013-11-21 | Samsung Display Co., Ltd. | Target for sputtering and apparatus including the same |
WO2014014091A1 (en) * | 2012-07-20 | 2014-01-23 | 株式会社コベルコ科研 | Target assembly |
JP2014114498A (en) * | 2012-12-12 | 2014-06-26 | Ulvac Japan Ltd | Sputtering apparatus |
JP2014129559A (en) * | 2012-12-28 | 2014-07-10 | Tosoh Corp | Multi-divided sputtering target and manufacturing method of the same |
US10615011B2 (en) * | 2011-06-30 | 2020-04-07 | View, Inc. | Sputter target and sputtering methods |
EP2883644B1 (en) * | 2012-09-07 | 2020-04-29 | Mitsubishi Heavy Industries Machine Tool Co., Ltd. | Normal temperature bonding device and normal temperature bonding method |
CN112111718A (en) * | 2020-09-10 | 2020-12-22 | 深圳市华星光电半导体显示技术有限公司 | Target device and preparation method and application thereof |
CN114901857A (en) * | 2020-02-06 | 2022-08-12 | 三井金属矿业株式会社 | Sputtering target |
-
1996
- 1996-10-14 JP JP8270784A patent/JPH10121232A/en active Pending
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003027227A (en) * | 2001-07-23 | 2003-01-29 | Dainippon Printing Co Ltd | Sputtering target |
JP2006328522A (en) * | 2005-05-24 | 2006-12-07 | Applied Materials Inc | Multiple target tiles with complementary beveled edges forming slanted gap therebetween |
WO2006127221A3 (en) * | 2005-05-24 | 2007-02-01 | Applied Materials Inc | Sputtering target tiles having structured edges separated by a gap |
US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
EP1728892A2 (en) * | 2005-05-31 | 2006-12-06 | Applied Materials, Inc. | Bonding of sputtering target to target holder |
EP1728892A3 (en) * | 2005-05-31 | 2007-08-29 | Applied Materials, Inc. | Bonding of sputtering target to target holder |
US7550055B2 (en) | 2005-05-31 | 2009-06-23 | Applied Materials, Inc. | Elastomer bonding of large area sputtering target |
WO2006132916A3 (en) * | 2005-06-06 | 2007-12-06 | Thermal Conductive Bonding Inc | Large area elastomer bonded sputtering target and method for manufacturing |
JP2011190527A (en) * | 2010-02-17 | 2011-09-29 | Tosoh Corp | Sputtering target |
CN102686766A (en) * | 2010-11-08 | 2012-09-19 | 三井金属矿业株式会社 | Divided sputtering target and method for producing same |
JP4961513B1 (en) * | 2010-11-08 | 2012-06-27 | 三井金属鉱業株式会社 | Split sputtering target and manufacturing method thereof |
JP4961514B1 (en) * | 2010-11-08 | 2012-06-27 | 三井金属鉱業株式会社 | Split sputtering target and manufacturing method thereof |
JP2012127005A (en) * | 2010-11-08 | 2012-07-05 | Mitsui Mining & Smelting Co Ltd | Split sputtering target and method for producing the same |
WO2012063523A1 (en) * | 2010-11-08 | 2012-05-18 | 三井金属鉱業株式会社 | Divided sputtering target and method for producing same |
WO2012063524A1 (en) * | 2010-11-08 | 2012-05-18 | 三井金属鉱業株式会社 | Divided sputtering target and method for producing same |
TWI403605B (en) * | 2010-11-08 | 2013-08-01 | Mitsui Mining & Smelting Co | Divided sputtering target and method of producing the same |
US9556509B2 (en) | 2010-11-22 | 2017-01-31 | Flexenable Limited | Vapour deposition |
GB2485603A (en) * | 2010-11-22 | 2012-05-23 | Plastic Logic Ltd | Segmented target for vapour deposition process |
GB2485603B (en) * | 2010-11-22 | 2017-06-14 | Flexenable Ltd | Segmented target for vapour deposition process |
GB2498909B (en) * | 2010-11-22 | 2017-04-26 | Flexenable Ltd | Segmented target for vapour deposition process |
CN107365966A (en) * | 2011-03-03 | 2017-11-21 | 应用材料公司 | For forming the method and device of cylindrical target component |
CN107365966B (en) * | 2011-03-03 | 2023-04-07 | 应用材料公司 | Method and apparatus for forming cylindrical target assemblies |
CN103403217A (en) * | 2011-03-03 | 2013-11-20 | 应用材料公司 | Method and apparatus for forming a cylindrical target assembly |
WO2012121028A1 (en) * | 2011-03-04 | 2012-09-13 | シャープ株式会社 | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
US10615011B2 (en) * | 2011-06-30 | 2020-04-07 | View, Inc. | Sputter target and sputtering methods |
JP2013185160A (en) * | 2012-03-06 | 2013-09-19 | Jx Nippon Mining & Metals Corp | Sputtering target |
US20130306466A1 (en) * | 2012-05-18 | 2013-11-21 | Samsung Display Co., Ltd. | Target for sputtering and apparatus including the same |
JP2014019930A (en) * | 2012-07-20 | 2014-02-03 | Kobelco Kaken:Kk | Target assembly |
WO2014014091A1 (en) * | 2012-07-20 | 2014-01-23 | 株式会社コベルコ科研 | Target assembly |
EP2883644B1 (en) * | 2012-09-07 | 2020-04-29 | Mitsubishi Heavy Industries Machine Tool Co., Ltd. | Normal temperature bonding device and normal temperature bonding method |
JP2014114498A (en) * | 2012-12-12 | 2014-06-26 | Ulvac Japan Ltd | Sputtering apparatus |
JP2014129559A (en) * | 2012-12-28 | 2014-07-10 | Tosoh Corp | Multi-divided sputtering target and manufacturing method of the same |
CN114901857A (en) * | 2020-02-06 | 2022-08-12 | 三井金属矿业株式会社 | Sputtering target |
CN114901857B (en) * | 2020-02-06 | 2024-06-25 | 三井金属矿业株式会社 | Sputtering target |
CN112111718A (en) * | 2020-09-10 | 2020-12-22 | 深圳市华星光电半导体显示技术有限公司 | Target device and preparation method and application thereof |
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