TWI564413B - Backing plate, target assembly and target for supporting - Google Patents
Backing plate, target assembly and target for supporting Download PDFInfo
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- TWI564413B TWI564413B TW100141772A TW100141772A TWI564413B TW I564413 B TWI564413 B TW I564413B TW 100141772 A TW100141772 A TW 100141772A TW 100141772 A TW100141772 A TW 100141772A TW I564413 B TWI564413 B TW I564413B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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Description
本發明係有關與接合材(焊材)之密著性高的支承板、靶材總成(assembly)及濺鍍用靶材。The present invention relates to a support plate, a target assembly, and a sputtering target having high adhesion to a bonding material (weld material).
就在基板上形成薄膜之技術而言,已知有濺鍍法。濺鍍用的靶材,由於在電漿中離子之濺鍍作用而升溫,故係在與冷卻用的支承板接合的狀態下使用。對支承板之靶材的黏結(bonding),廣泛採用焊接(brazing)。As a technique for forming a thin film on a substrate, a sputtering method is known. Since the target for sputtering is heated by the sputtering action of ions in the plasma, it is used in a state of being joined to the support plate for cooling. Brazing is widely used for bonding the target of the support plate.
濺鍍中使用的靶材,係要求能承受成膜時之溫度上升或熱應力,放出氣體量少等。尤其靶材的耐熱特性,係對靶材與支承板要求有高的密著性。因此對靶材與支承板要求與焊材有充分的潤濕性,就以往作為靶材與支承板各自之接合面的底層處理而言,係藉由電鍍、蒸鍍、助熔劑來進行金屬化(metallized)處理(參照例如專利文獻1)。The target used in the sputtering is required to withstand the temperature rise or thermal stress at the time of film formation, and the amount of released gas is small. In particular, the heat resistance of the target requires high adhesion to the target and the support plate. Therefore, it is required to have sufficient wettability with the target material and the support plate, and the metallization by the plating, vapor deposition, and flux is conventionally performed as the underlayer treatment of the joint surface between the target and the support plate. (metallized) processing (refer to, for example, Patent Document 1).
專利文獻1:日本特開2006-257510號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-257510
然而,藉由電鍍、蒸鍍、或助熔劑的金屬化處理,由於係以金屬化層被覆母材表面,故與母材之密著性不佳,而有剝離之問題。此外,藉由電鍍或助熔劑的塗布所進行之金屬化處理,需要廢液之處理成本,同時對環境負荷很大。此外,助熔劑有放出氣體之問題,難以進行成高品質之成膜。However, by metallization treatment of electroplating, vapor deposition, or fluxing, since the surface of the base material is coated with a metallized layer, the adhesion to the base material is poor, and there is a problem of peeling. In addition, the metallization treatment by plating or flux coating requires a disposal cost of the waste liquid and a large environmental load. In addition, the flux has a problem of releasing gas, and it is difficult to form a film of high quality.
有鑑於如上述之情事,本發明之目的係提供一種與接合材的密著性佳的支承板、靶材總成及濺鍍用靶材。In view of the above, it is an object of the present invention to provide a support plate, a target assembly, and a sputtering target which are excellent in adhesion to a bonding material.
為了達成上述目的,本發明之一形態的支承板係具備支承板本體與密著層。In order to achieve the above object, a support plate according to an aspect of the present invention includes a support plate body and an adhesion layer.
上述支承板本體具有與濺鍍用之靶材相對向之第1之面,且由第1金屬材料所形成。The support plate body has a first surface facing the sputtering target and is formed of a first metal material.
上述密著層係具有塗布有以銦、錫或此等之合金所形成的接合材之第2面,且含有對於上述接合材比上述第1金屬材料具有更高潤濕性的第2金屬材料,且形成在上述第1面。The adhesion layer has a second surface coated with a bonding material made of indium, tin or an alloy thereof, and includes a second metal material having higher wettability with respect to the bonding material than the first metal material. And formed on the first surface.
此外,本發明之一形態的靶材總成,具備濺鍍用之靶材、支承板本體、接合層、及密著層。Further, a target assembly according to an aspect of the present invention includes a target for sputtering, a support plate body, a bonding layer, and an adhesion layer.
上述支承板本體係具備與上述靶材相對向之第1面,且由第1金屬材料所形成。The support plate system includes a first surface facing the target and is formed of a first metal material.
上述接合層係設置在上述靶材與上述第1面之間,且由接合材所形成。The bonding layer is provided between the target and the first surface, and is formed of a bonding material.
上述密著層係具備塗布有上述接合材之第2面,且含有對於上述接合材比上述第1金屬材料具有更高潤濕性的第2金屬材料,且形成上述第1面。The adhesion layer includes a second surface to which the bonding material is applied, and a second metal material having higher wettability with respect to the bonding material than the first metal material, and the first surface is formed.
此外,本發明之一形態之濺鍍用靶材係具備靶材本體、與金屬化層。Moreover, the target for sputtering of one embodiment of the present invention includes a target body and a metallization layer.
上述靶材本體係具備塗布有以銦、錫或此等之合金所形成的接合材之接合面,且由第1金屬材料所形成。The target material system includes a joint surface on which a bonding material made of indium, tin or an alloy thereof is applied, and is formed of a first metal material.
上述金屬化層係形成在上述接合面,且由上述第1金屬材料與第2金屬材料之合金相所構成,而第2金屬材料係對於上述接合材,比上述第1金屬材料具有更高的潤濕性。The metallization layer is formed on the joint surface and is composed of an alloy phase of the first metal material and the second metal material, and the second metal material is higher than the first metal material for the joint material. Wettability.
本發明之一實施形態的支承板係具備支承板本體與密著層。A support plate according to an embodiment of the present invention includes a support plate body and an adhesion layer.
上述支承板本體係具有與濺鍍用靶材相對向之第1面,且由第1金屬材料所形成。The support plate system has a first surface facing the sputtering target and is formed of a first metal material.
上述密著層係具備塗布有以銦、錫或此等之合金所形成的接合材之第2面,且含有對上述接合材比上述第1金屬材料具有更高潤濕性的第2金屬材料,且形成在上述第1的面。The adhesion layer includes a second surface to which a bonding material made of an alloy of indium, tin or the like is applied, and a second metal material having higher wettability to the bonding material than the first metal material. And formed on the first surface described above.
上述支承板中,密著層由於係以對接合材具有比支承板本體之構成材料更高潤濕性的材料所形成,故在與接合材之間可以得到高的密著性。In the above-mentioned support plate, since the adhesion layer is formed of a material having a higher wettability to the bonding material than the constituent material of the support plate body, high adhesion can be obtained between the bonding material and the bonding material.
上述密著層也可以由上述第1金屬材料與上述第2金屬材料之合金相所成的金屬化層所形成。The adhesion layer may be formed of a metallization layer formed by an alloy phase of the first metal material and the second metal material.
藉此,可以將金屬化層與支承板本體的第1面一體化,且可以防止金屬化層自該第1面剝離。此外,上述合金相因為含有對接合材具有高潤濕性之金屬材料,故可提升與接合材之密著性。Thereby, the metallization layer can be integrated with the first surface of the support plate main body, and the metallization layer can be prevented from being peeled off from the first surface. Further, since the above alloy phase contains a metal material having high wettability to the bonding material, the adhesion to the bonding material can be improved.
形成支承板的金屬化層之第1金屬材料及第2金屬材料皆無特別限定,可以任意地選擇。例如,就第1金屬材料而言,可以列舉:銅、鋁、鈦、鉬、或此等之合金、或是不鏽鋼等,就第2金屬材料而言,可以列舉:銅、鎳、鋁、錫、銦、金、銀、或此等之合金。其中,可以適合使用例如:第1金屬材料為鉬或其合金,第2金屬材料為鎳或其合金的組合。The first metal material and the second metal material forming the metallization layer of the support plate are not particularly limited and may be arbitrarily selected. For example, examples of the first metal material include copper, aluminum, titanium, molybdenum, or an alloy thereof, or stainless steel. Examples of the second metal material include copper, nickel, aluminum, and tin. , indium, gold, silver, or alloys of these. Among them, for example, the first metal material is molybdenum or an alloy thereof, and the second metal material is a combination of nickel or an alloy thereof.
形成上述金屬化層的方法也無特別限定,例如,可以藉由放電處理而形成金屬化層。藉此,可以容易地形成金屬化層。The method of forming the above metallization layer is also not particularly limited, and for example, a metallization layer can be formed by discharge treatment. Thereby, the metallization layer can be easily formed.
上述密著層也可以由以上述第2金屬材料所形成且接合在第1面上之金屬板所形成。The adhesion layer may be formed of a metal plate formed of the second metal material and bonded to the first surface.
上述金屬板係接合在支承板本體之第1面,而構成支承板本體之金屬化層。上述金屬板由於係以對接合材具有比支承板本體之構成材料更高潤濕性的材料所形成,故在與接合材之間可以得到高的密著性。此外,由於金屬板係與支承板本體一體接合,故可以得到對支承板本體較高的剝離強度。The metal plate is joined to the first surface of the support plate body to form a metallization layer of the support plate body. Since the metal plate is formed of a material having a higher wettability to the bonding material than the constituent material of the support plate body, high adhesion can be obtained between the metal plate and the bonding material. Further, since the metal plate is integrally joined to the support plate body, a high peeling strength to the support plate body can be obtained.
金屬板對於支承板本體之接合方法並無特別限定,例如,可以適用爆炸接合、擴散接合或焊接等。藉此,就可以避開廢液之處理或放出氣體之產生的問題。The joining method of the metal plate to the support plate body is not particularly limited, and for example, explosive joining, diffusion bonding, welding, or the like can be applied. Thereby, it is possible to avoid the problem of the disposal of the waste liquid or the generation of the released gas.
形成支承板本體之第1金屬材料及形成金屬板之第2金屬材料皆無特別限定,可以任意地選擇。例如,就第1金屬材料而言,可以使用:Ti(鈦)、Ti合金或不鏽鋼,就第2金屬材料而言,可以使用:Cu(銅)、Ni(鎳)、Al(鋁)或此等之合金。The first metal material forming the support plate main body and the second metal material forming the metal plate are not particularly limited and may be arbitrarily selected. For example, as the first metal material, Ti (titanium), a Ti alloy or stainless steel can be used, and in the case of the second metal material, Cu (copper), Ni (nickel), Al (aluminum) or the like can be used. Alloys.
以Ti(鈦)、Ti合金或不鏽鋼作為基材之支承板,由於楊氏係數大、強度高,故因水壓產生之膨脹少。因此,例如在燒結靶般脆性高的靶中係使用此種支承板。由於Ti及Ti合金之熱膨脹係數小,以此等材料作為基材之支承板,例如係在ITO(Indium Tin Oxide;銦錫氧化物)、GZO(Gallium-doped Zinc Oxide;鎵鋅氧化物)等之低熱膨脹靶中使用。Ti、Ti合金及不鏽鋼等由於與In(銦)或Sn(錫)等之接合材的潤濕性低,故以Cu、Ni、Al等所形成的金屬板會形成在接合面,而可以確保與上述接合材的良好密著性。Since the support plate made of Ti (titanium), Ti alloy or stainless steel as a base material has a large Young's modulus and high strength, the expansion due to water pressure is small. Therefore, such a support plate is used, for example, in a target having high brittleness like a sintered target. Since Ti and Ti alloys have a small thermal expansion coefficient, such a material as a support plate for a substrate is, for example, ITO (Indium Tin Oxide), GZO (Gallium-doped Zinc Oxide), or the like. Used in low thermal expansion targets. Since Ti, Ti alloy, stainless steel, etc. have low wettability with a bonding material such as In (indium) or Sn (tin), a metal plate formed of Cu, Ni, Al or the like is formed on the joint surface, and it is ensured. Good adhesion to the above bonding material.
上述金屬板也可以分割為複數個分割片而接合在上述第1面。藉此,可以抑制起因於支承板本體與金屬板的熱膨脹係數差的支承板之翹曲或變形。The metal plate may be divided into a plurality of divided pieces and joined to the first surface. Thereby, warpage or deformation of the support plate due to the difference in thermal expansion coefficient between the support plate main body and the metal plate can be suppressed.
本發明之一實施形態的靶材總成係具備濺鍍用之靶材、支承板本體、接合層、及密著層。A target assembly according to an embodiment of the present invention includes a target for sputtering, a support plate body, a bonding layer, and an adhesion layer.
上述支承板本體係具有與上述靶材相對向之第1面,且由第1金屬材料所形成。The support plate system has a first surface facing the target and is formed of a first metal material.
上述接合層係設置在上述靶材與上述第1面之間,且由接合材所形成。The bonding layer is provided between the target and the first surface, and is formed of a bonding material.
上述密著層係具有塗布有上述接合材之第2面,含有對上述接合材具有比上述第1金屬材料更高潤濕性的第2金屬材料,且形成在上述第1的面。The adhesion layer has a second surface to which the bonding material is applied, and a second metal material having a higher wettability to the bonding material than the first metal material, and is formed on the first surface.
上述靶材總成中,密著層係由對接合材具有比支承板本體之構成材料更高潤濕性的材料所形成。因此,在與接合材之間可以得到高的密著性。In the above target assembly, the adhesion layer is formed of a material having a higher wettability to the bonding material than the constituent material of the support plate body. Therefore, high adhesion can be obtained between the bonding material and the bonding material.
本發明之一實施形態之濺鍍用靶材係具備靶材本體、及金屬化層。A target for sputtering according to an embodiment of the present invention includes a target body and a metallization layer.
上述靶材本體係具有塗布有以銦、錫或此等之合金所形成的接合材之接合面,且由第1金屬材料所形成。The above target system has a joint surface coated with a bonding material formed of indium, tin or an alloy thereof, and is formed of a first metal material.
上述金屬化層係形成在上述接合面,且由上述第1金屬材料及第2金屬材料之合金相所構成,而第2金屬材料係對於上述接合材具有比上述第1金屬材料更高的潤濕性。The metallization layer is formed on the joint surface and is composed of an alloy phase of the first metal material and the second metal material, and the second metal material has a higher pressure than the first metal material for the joint material. Wet.
上述金屬化層係由上述第1及第2金屬材料之合金相所構成。藉此可以將金屬化層與靶材本體的接合面一體化,且可以防止金屬化層自接合面剝離。此外,上述合金相係因為含有對接合材具有高潤濕性之金屬材料,故可提升與接合材之密著性。The metallization layer is composed of an alloy phase of the first and second metal materials. Thereby, the joint surface of the metallized layer and the target body can be integrated, and the metallized layer can be prevented from peeling off from the joint surface. Further, since the above alloy phase contains a metal material having high wettability to the bonding material, the adhesion to the bonding material can be improved.
形成靶材的金屬化層之第1金屬材料及第2金屬材料皆無特別限定,可以任意地選擇。例如,就第1金屬材料而言,可以列舉:銅、鋁、鈦、鉬、或此等之合金、或不鏽鋼等,就第2金屬材料而言,可以列舉:銅、鎳、鋁、錫、銦、金、銀、或此等之合金。其中,可以適合使用例如:第1金屬材料為鉬或其合金、第2金屬材料為鎳或其合金的組合。The first metal material and the second metal material forming the metallization layer of the target are not particularly limited and may be arbitrarily selected. For example, examples of the first metal material include copper, aluminum, titanium, molybdenum, or an alloy thereof, or stainless steel. Examples of the second metal material include copper, nickel, aluminum, and tin. Indium, gold, silver, or alloys of these. Among them, for example, a first metal material is molybdenum or an alloy thereof, and a second metal material is a combination of nickel or an alloy thereof.
以下,一面參考圖式,一面說明本發明之實施形態。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第1圖係示意表示本發明的一實施形態之靶材總成的剖面圖。本實施形態之靶材總成10係有支承板本體1、靶材2、及接合層3。Fig. 1 is a cross-sectional view schematically showing a target assembly according to an embodiment of the present invention. The target assembly 10 of the present embodiment includes a support plate body 1, a target 2, and a bonding layer 3.
接合層3係接合支承板本體1與靶材2的接合材,例如,以In、Sn或此等之合金所構成的焊材來形成。The bonding layer 3 is formed by bonding a bonding material of the support plate main body 1 and the target material 2, for example, a welding material composed of In, Sn, or the like.
靶材總成10係設置在未圖示的濺鍍裝置。支承板1係與直流、交流或RF電源連接,靶材2係與真空室內之基板表面隔開預定之間隔而相對向配置。靶材總成10具有例如藉由冷卻水冷卻的構造,藉由水冷支承板1而防止濺鍍時的靶材2之過度升溫,且防止因接合層3的熔融所造成之靶材2之剝離等。靶材總成10係與未圖示的磁場單元組合,而構成為磁控管型濺鍍陰極。The target assembly 10 is provided in a sputtering apparatus (not shown). The support plate 1 is connected to a direct current, alternating current or RF power source, and the target 2 is disposed to face the substrate surface in the vacuum chamber at a predetermined interval. The target assembly 10 has a structure cooled by, for example, cooling water, and the water-cooled support plate 1 prevents excessive temperature rise of the target 2 during sputtering, and prevents peeling of the target 2 due to melting of the bonding layer 3. Wait. The target assembly 10 is combined with a magnetic field unit (not shown) to constitute a magnetron sputtering cathode.
第2圖係支承板1的剖面圖。支承板1具有金屬製的支承板本體11及金屬化層12(第1金屬化層)。Fig. 2 is a cross-sectional view of the support plate 1. The support plate 1 has a metal support plate body 11 and a metallization layer 12 (first metallization layer).
支承板本體11係具有接合面11a。在接合面11a隔著接合層3接合有靶材2。在形成支承板本體11之金屬材料(第1金屬材料)係使用各種之金屬材料,例如,可以列舉:Cu、Al、Ti、Mo、或此等之合金或是不鏽鋼等。The support plate body 11 has a joint surface 11a. The target 2 is joined to the joint surface 11a via the joint layer 3. Various metal materials are used for the metal material (first metal material) forming the support plate main body 11, and examples thereof include Cu, Al, Ti, Mo, or alloys thereof, or stainless steel.
支承板本體11係在內部具有未圖示冷卻水的循環通路。支承板本體11並不限定於在內部具有上述循環通路之構造,也可以為與接合面11a相反側之面與冷卻水接觸之冷卻面。此外,支承板本體11並不限定在形成單純之板形狀的例,例如,亦可如第3圖所示為稱為所謂之帽子型的剖面形狀。The support plate main body 11 has a circulation passage through which cooling water is not shown. The support plate main body 11 is not limited to the structure having the above-described circulation passage therein, and may be a cooling surface that is in contact with the cooling water on the surface opposite to the joint surface 11a. Further, the support plate main body 11 is not limited to an example in which a simple plate shape is formed. For example, as shown in Fig. 3, a cross-sectional shape called a so-called hat type may be used.
金屬化層12係形成在接合面11a。金屬化層12係以構成支承板本體11之母材(第1金屬材料)、與對於構成接合層3之接合材(In、Sn等)比該金屬材料具有更高潤濕性的金屬化金屬(第2金屬材料)之合金相所形成。金屬化層12係發揮作為提升支承板本體11與接合層3之間之密著性的密著層之功能。The metallization layer 12 is formed on the joint surface 11a. The metallization layer 12 is a metal material (the first metal material) constituting the support plate main body 11 and a metallization metal having a higher wettability than the metal material (In, Sn, etc.) constituting the bonding layer 3 than the metal material. The alloy phase of the (second metal material) is formed. The metallization layer 12 functions as an adhesion layer that enhances the adhesion between the support plate main body 11 and the bonding layer 3.
就對於In、Sn等之接合材具有高潤濕性的金屬材料而言,可以列舉:Cu、Ni、Al、Sn、In、Au、Ag或此等之合金,因應構成支承板本體11的金屬材料種類而適當選擇。在本實施形態中,支承板本體11係由Mo所構成,金屬化金屬係使用Ni。Examples of the metal material having high wettability with respect to the bonding material of In, Sn, and the like include Cu, Ni, Al, Sn, In, Au, Ag, or the like, in order to constitute the metal of the support plate body 11. Choose the right type of material. In the present embodiment, the support plate main body 11 is made of Mo, and the metallized metal is made of Ni.
第4圖係說明金屬化層12之形成方法的示意圖。金屬化層12係藉由放電處理而形成。如第4圖所示,放電用之電極棒15為隔著預定間隙而與接合面11a相對向配置。電極棒15係由金屬化金屬(本例由為Ni)所形成。在接合面11a之金屬化金屬處理之際,藉由在電極棒15與支承板本體11之間施加預定之電壓,而在電極棒15的前端與接合面11a之間產生放電。藉此,形成接合面11a的母材(Mo)為藉由從電極棒15飛散之Ni粒子而合金化。電極棒15係在接合面11a上移動,藉此在接合面11a整面上形成金屬化層12。Fig. 4 is a schematic view showing a method of forming the metallization layer 12. The metallization layer 12 is formed by a discharge process. As shown in Fig. 4, the electrode rod 15 for discharge is disposed to face the joint surface 11a with a predetermined gap therebetween. The electrode rod 15 is formed of a metallized metal (in this example, Ni). At the metallization metal treatment of the joint surface 11a, a discharge is generated between the tip end of the electrode rod 15 and the joint surface 11a by applying a predetermined voltage between the electrode rod 15 and the support plate body 11. Thereby, the base material (Mo) forming the joint surface 11a is alloyed by the Ni particles scattered from the electrode rod 15. The electrode rod 15 is moved on the joint surface 11a, whereby the metallization layer 12 is formed on the entire surface of the joint surface 11a.
接合面11a之金屬化金屬處理條件並無特別限定,可以使用例如電壓150V、電容器容量40μF之脈衝電源,或是電壓100V、電容器容量10μF之脈衝電源作為電源。金屬化層12之厚度並無特別限定,只要使接合面11a之表層可以金屬化之厚度即可。The metallization metal treatment conditions of the joint surface 11a are not particularly limited, and for example, a pulse power source having a voltage of 150 V and a capacitor capacity of 40 μF or a pulse power source having a voltage of 100 V and a capacitor capacity of 10 μF can be used as the power source. The thickness of the metallization layer 12 is not particularly limited as long as the surface layer of the joint surface 11a can be metalized.
由於金屬化層12係與支承板本體11之接合面11a一體地形成,故防止金屬化層12從接合面11a剝離。此外構成金屬化層12的合金相,由於含有對於接合材具有高潤濕性的金屬材料(金屬化金屬),故可以提升與接合材的密著性。Since the metallization layer 12 is integrally formed with the joint surface 11a of the support plate main body 11, the metallization layer 12 is prevented from being peeled off from the joint surface 11a. Further, since the alloy phase constituting the metallization layer 12 contains a metal material (metallized metal) having high wettability with respect to the bonding material, adhesion to the bonding material can be improved.
第5圖係靶材2的剖面圖。靶材2具有金屬製的靶材本體21及金屬化層22(第2金屬化層)。Fig. 5 is a cross-sectional view of the target 2. The target 2 has a metal target body 21 and a metallization layer 22 (second metallization layer).
靶材本體21係具有接合面21a。在接合面21a隔著接合層3而接合有支承板本體1。在形成靶材本體21之金屬材料(第1金屬材料)係使用各種之金屬材料,例如,可以列舉:Cu、Al、Ti、Mo、或此等之合金或不鏽鋼等。The target body 21 has a joint surface 21a. The support plate main body 1 is joined to the joint surface 21a via the joint layer 3. Various metal materials are used for the metal material (first metal material) forming the target body 21, and examples thereof include Cu, Al, Ti, Mo, or alloys thereof, stainless steel, and the like.
靶材本體21也可以是原料金屬之鑄造體,也可以是原料粉末的燒結體。靶材本體21係可以分別調整成適合濺鍍用途之大小、厚度、形狀、組織。The target body 21 may be a cast body of a raw material metal or a sintered body of a raw material powder. The target body 21 can be individually adjusted to suit the size, thickness, shape, and texture of the sputtering application.
金屬化層22係形成在接合面21a。金屬化層22係由構成靶材本體21之母材(第1金屬材料)、及對於構成接合層3之接合材(In、Sn等)比該金屬材料具有更高潤濕性的金屬化金屬(第2金屬材料)之合金相所形成。金屬化層22係具有發揮提升支承板本體11與接合層3之間之密著性的密著層之功能。The metallization layer 22 is formed on the joint surface 21a. The metallization layer 22 is made of a base material (first metal material) constituting the target body 21 and a metallization metal having higher wettability with respect to the metal material constituting the bonding material 3 (In, Sn, etc.). The alloy phase of the (second metal material) is formed. The metallization layer 22 has a function of an adhesion layer that enhances the adhesion between the support plate main body 11 and the bonding layer 3.
就金屬化金屬而言,可以列舉:Cu、Ni、Al、Sn、In、Au、Ag或此等之合金,因應構成靶材本體21的金屬材料之種類而適當地選擇。在本實施形態中,靶材本體21係由Mo所構成,金屬化金屬係使用Ni。金屬化層22係藉與對上述支承板本體11的接合面11a之金屬化層12的形成方法同樣之放電處理而形成。The metallized metal is exemplified by Cu, Ni, Al, Sn, In, Au, Ag, or the like, and is appropriately selected depending on the kind of the metal material constituting the target body 21. In the present embodiment, the target body 21 is made of Mo, and the metallized metal is made of Ni. The metallization layer 22 is formed by the same discharge treatment as the method of forming the metallization layer 12 of the joint surface 11a of the support plate main body 11.
由於金屬化層22係與靶材本體21之接合面21a一體地形成,因而防止金屬化層22自接合面21a剝離。此外,由於構成金屬化層22的合金相含有對於接合材具有高潤濕性的金屬材料(金屬化金屬),故可提升與接合材的密著性。Since the metallization layer 22 is integrally formed with the joint surface 21a of the target body 21, the metallization layer 22 is prevented from being peeled off from the joint surface 21a. Further, since the alloy phase constituting the metallization layer 22 contains a metal material (metallized metal) having high wettability with respect to the bonding material, adhesion to the bonding material can be improved.
如以上方式構成之支承板本體1及靶材2,係在使各個之接合面11a、21a互相對向之狀態下,隔著熔融狀態之接合材而黏貼。此時,由於在各接合面11a、21a形成金屬化層12、22,故能確保在接合面之全區域與接合材的良好潤濕性。因此,使接合材硬化而形成的接合層3,係可對於支承板本體1及靶材2雙方得到良好之密著性。The support plate main body 1 and the target material 2, which are configured as described above, are adhered to each other via the bonding material in a molten state in a state in which the respective joint faces 11a and 21a are opposed to each other. At this time, since the metallized layers 12 and 22 are formed on the respective joint faces 11a and 21a, it is possible to ensure good wettability with the joint material over the entire joint surface. Therefore, the bonding layer 3 formed by curing the bonding material can provide good adhesion to both the support plate main body 1 and the target material 2.
此外依據本實施形態,因為金屬化層12、22係藉由放電處理而形成,且由於與電鍍或助熔劑處理不同而不需要廢液處理,因此對環境之負荷小。此外,藉由放電處理所進行之金屬化金屬化也沒有放出氣體之問題,因而可形成高品質的濺鍍膜。Further, according to the present embodiment, since the metallization layers 12 and 22 are formed by the discharge treatment, since the waste liquid treatment is not required unlike the plating or the flux treatment, the load on the environment is small. In addition, the metallization metallization by the discharge treatment does not cause a problem of gas evolution, so that a high-quality sputtering film can be formed.
第6圖係表示本發明的其他實施形態之靶材總成的示意剖面圖。本實施形態之靶材總成30具有支承板31、靶材32、及接合層33。Fig. 6 is a schematic cross-sectional view showing a target assembly according to another embodiment of the present invention. The target assembly 30 of the present embodiment has a support plate 31, a target 32, and a bonding layer 33.
接合層33係接合支承板31與靶材32的接合材,例如,以In、Sn或此等之合金所構成的焊材來形成。The bonding layer 33 is formed by bonding a bonding material of the support plate 31 and the target 32, for example, a consumable material composed of In, Sn, or the like.
靶材總成30係設置在未圖示的濺鍍裝置。支承板31係與直流、交流或RF電源連接,靶材32係與真空室內之基板表面隔開預定之間隔而相對向配置。靶材總成30具有例如藉由冷卻水冷卻的構造,藉由將支承板31水冷而防止濺鍍時的靶材32之過度升溫、因接合層33的熔融而剝離靶材32等。靶材總成30係與未圖示的磁場單元組合,而構成為磁控管型濺鍍陰極。The target assembly 30 is provided in a sputtering apparatus (not shown). The support plate 31 is connected to a direct current, alternating current or RF power source, and the target 32 is disposed to face the substrate surface in the vacuum chamber at a predetermined interval. The target assembly 30 has a structure cooled by cooling water, for example, and the support plate 31 is water-cooled to prevent excessive temperature rise of the target 32 during sputtering, and the target 32 is peeled off by melting of the bonding layer 33. The target assembly 30 is combined with a magnetic field unit (not shown) to constitute a magnetron-type sputtering cathode.
第7圖係支承板31的分解剖面圖。支承板31具有積層金屬製的支承板本體311及金屬板312之構造。Fig. 7 is an exploded cross-sectional view of the support plate 31. The support plate 31 has a structure in which a metal support plate body 311 and a metal plate 312 are laminated.
支承板本體311具有接合面311a(第1面)。在接合面311a係隔著接合層33而接合有靶材32。形成支承板本體311之金屬材料(第1金屬材料)係使用各種之金屬材料,例如可列舉Cu、Al、Ti、Mo、或此等合金或是不鏽鋼等。在本實施形態中,支承板本體311係以Ti、Ti合金或不鏽鋼等所形成。The support plate body 311 has a joint surface 311a (first surface). The target 32 is joined to the joint surface 311a via the joint layer 33. The metal material (first metal material) forming the support plate main body 311 is made of various metal materials, and examples thereof include Cu, Al, Ti, Mo, or alloys thereof, or stainless steel. In the present embodiment, the support plate main body 311 is formed of Ti, a Ti alloy, stainless steel or the like.
Ti、Ti合金及不鏽鋼的楊氏係數大、強度高。因此將Ti、Ti合金或不鏽鋼當作基材之支承板,其因水壓而產生之膨脹少。因此,例如燒結靶材般之高脆性靶係使用此種的支承板。此外,由於Ti及Ti合金的熱膨脹係數小,因此將此等的材料當作基材之支承板,係使用在例如ITO(Indium Tin Oxide;銦錫氧化物)、GZO(Gallium-doped Zinc Oxide;鎵鋅氧化物)等熱膨脹小的靶材。Ti, Ti alloy and stainless steel have large Young's modulus and high strength. Therefore, Ti, Ti alloy or stainless steel is used as the support plate of the substrate, and the expansion due to the water pressure is small. Therefore, a highly brittle target such as a sintered target uses such a support plate. Further, since Ti and Ti alloys have a small coefficient of thermal expansion, these materials are used as a support plate for a substrate, for example, ITO (Indium Tin Oxide), GZO (Gallium-doped Zinc Oxide; Gallium zinc oxide) and other targets with small thermal expansion.
支承板本體311在內部具有未圖示之冷卻水之循環通路。支承板本體311係並不限定於在內部具有上述循環通路之構造,也可以為與接合面311a相反側之面與冷卻水接觸之冷卻面。此外,支承板本體311並不限定於形成單純之板形狀的例子,也可以為如第8圖所示之稱為所謂帽子型的剖面形狀。The support plate main body 311 has a circulation passage of cooling water (not shown) inside. The support plate main body 311 is not limited to the structure having the above-described circulation passage therein, and may be a cooling surface that is in contact with the cooling water on the surface opposite to the joint surface 311a. Further, the support plate main body 311 is not limited to an example in which a simple plate shape is formed, and may be a cross-sectional shape called a hat type as shown in Fig. 8.
金屬板312係具有接合面312a(第2面)。接合面312a係形成在與支承板本體311相對向之面的相反側之面。在接合面312a塗布有構成接合層33的接合材。The metal plate 312 has a joint surface 312a (second surface). The joint surface 312a is formed on the opposite side of the surface opposite to the support plate body 311. A bonding material constituting the bonding layer 33 is applied to the bonding surface 312a.
金屬板312係接合在接合面311a而構成支承板本體311之金屬化層。金屬板312係由構成支承板本體311之金屬基材(第1金屬材料)、及對於構成接合層33之接合材(In、Sn等)比該金屬材料具有高潤濕性的金屬化金屬(第2金屬材料)所構成。金屬板312係發揮作為提升支承板本體311與接合層33之間之密著性的密著層之功能。金屬板312之厚度並無特別限定,例如係在0.1mm以上1.0mm以下。The metal plate 312 is joined to the joint surface 311a to form a metallization layer of the support plate body 311. The metal plate 312 is made of a metal substrate (first metal material) constituting the support plate main body 311 and a metallized metal having high wettability with respect to the metal material (In, Sn, etc.) constituting the bonding layer 33 ( The second metal material is composed of. The metal plate 312 functions as an adhesive layer that enhances the adhesion between the support plate main body 311 and the bonding layer 33. The thickness of the metal plate 312 is not particularly limited, and is, for example, 0.1 mm or more and 1.0 mm or less.
就對於In、Sn等接合材具有高潤濕性的金屬材料而言,可以列舉:Cu、Ni、Al、Sn、In、Au、Ag或此等之合金,因應構成支承板本體311的金屬材料種類而適當選擇。在本實施形態中,係以Cu、Ni、Al或此等之合金來形成金屬板312。The metal material having high wettability with respect to the bonding material such as In, Sn, etc., may be exemplified by Cu, Ni, Al, Sn, In, Au, Ag or the like, in order to constitute the metal material of the support plate body 311. Choose the appropriate type. In the present embodiment, the metal plate 312 is formed of Cu, Ni, Al or the like.
在本實施形態中,支承板本體311的構成材料係使用Ti、Ti合金或不鏽鋼。由於Ti、Ti合金、不鏽鋼等與In或Sn等接合材的潤濕性低,故將由Cu、Ni、Al等所形成的金屬板321形成在接合面311a,即可確保與接合材的良好密著性。In the present embodiment, the constituent material of the support plate main body 311 is Ti, a Ti alloy or stainless steel. Since Ti, Ti alloy, stainless steel, and the like have low wettability with a bonding material such as In or Sn, the metal plate 321 formed of Cu, Ni, Al, or the like is formed on the bonding surface 311a, thereby ensuring good adhesion to the bonding material. Sexuality.
對支承板本體接合金屬板之方法並無特別限定,在本實施形態係採用爆炸接合法。The method of joining the metal sheets to the support plate body is not particularly limited, and in the present embodiment, the explosion bonding method is employed.
爆炸接合法係將當火藥爆發時在極短時間內產生之高能量利用在金屬間之接合的方法,也稱為爆發熔接或是爆發壓接。第9圖說明藉由爆炸接合接合支承板本體311與金屬板312之方法的示意圖。如第9圖(A)所示,在支承板本體311之接合面311a,對向配置有金屬板312。在金屬板312之背面側(圖中上面側)係隔著緩衝材341設置有火藥層342,在火藥層342之一端(圖中左端)安裝有雷管343。如第9圖(B)所示,使雷管343起爆而使火藥層342向圖中右方依序爆發。金屬板312係形成預定角度而與接合面311a碰撞,藉由自碰撞點產生之金屬噴流而去除金屬表面之氧化被膜等。如上述方式自碰撞點依序地在金屬板312與接合面311a清淨之表面彼此相接合。The blast bonding method is a method in which high energy generated in a very short time when a gunpowder erupts is utilized for bonding between metals, which is also called burst welding or burst crimping. Fig. 9 is a view showing a method of joining the support plate body 311 and the metal plate 312 by explosion bonding. As shown in Fig. 9(A), a metal plate 312 is disposed opposite to the joint surface 311a of the support plate main body 311. A gunpowder layer 342 is provided on the back side (upper side in the drawing) of the metal plate 312 via the cushioning material 341, and a detonator 343 is attached to one end of the gunpowder layer 342 (left end in the drawing). As shown in Fig. 9(B), the detonator 343 is detonated and the gunpowder layer 342 is sequentially ejected to the right in the figure. The metal plate 312 is formed at a predetermined angle to collide with the joint surface 311a, and the oxide film or the like on the metal surface is removed by the metal jet generated from the collision point. The surfaces of the metal plate 312 and the joint surface 311a are sequentially joined to each other from the collision point in the above manner.
在支承板本體311與金屬板312之接合步驟中,係除了上述以外,也可以採用摩擦接合法或擴散接合法等其他固相接合法,也可以採用使用焊材之焊接法。In the joining step of the support plate main body 311 and the metal plate 312, in addition to the above, other solid phase joining methods such as a friction bonding method or a diffusion bonding method may be employed, or a welding method using a welding material may be employed.
靶材32也可以為原料金屬之鑄造體,也可以為原料粉末的燒結體。本實施形態的靶材32係由ITO、GZO等透明導電性氧化物所成之燒結體來形成。靶材32係分別調整成適於濺鍍用途之大小、厚度、形狀、組織。The target 32 may be a cast body of a raw material metal or a sintered body of a raw material powder. The target material 32 of the present embodiment is formed of a sintered body made of a transparent conductive oxide such as ITO or GZO. The target 32 is individually sized to suit the size, thickness, shape, and texture of the sputtering application.
如以上所構成的支承板31及靶材32,係在使各個之接合面互相對向之狀態下,隔著熔融狀態的接合材而黏貼。此時之支承板31側的接合面,由於係由對於接合材比支承板本體311之構成材料具有更高潤濕性的材料所構成的金屬板312來覆蓋,故能確保在接合面312a之全域與接合材之良好的潤濕性。接合層33係以硬化接合材來形成。The support plate 31 and the target member 32, which are configured as described above, are adhered to each other via a bonding material in a molten state in a state in which the respective bonding faces are opposed to each other. At this time, the joint surface on the support plate 31 side is covered by the metal plate 312 which is made of a material having a higher wettability with respect to the constituent material of the support plate main body 311, so that the joint surface 312a can be secured. Good wettability of the whole area and the joint material. The bonding layer 33 is formed by hardening a bonding material.
依據以上之本實施形態,可以得到支承板31與接合層33之良好的密著性。此外,由於金屬板312與支承板本體311一體化接合,故對於支承板本體311可得到高的剝離強度。According to the above embodiment, good adhesion between the support plate 31 and the bonding layer 33 can be obtained. Further, since the metal plate 312 is integrally joined to the support plate main body 311, high peel strength can be obtained for the support plate main body 311.
此外依據本實施形態,由於形成金屬化層的金屬板312係與支承板本體311一體化接合,故與電鍍或助熔劑處理不同而不需要廢液處理,對環境之負荷亦小。此外,由於沒有放出氣體之問題,故可以形成高品質之濺鍍膜。Further, according to the present embodiment, since the metal plate 312 forming the metallization layer is integrally joined to the support plate main body 311, it is different from the plating or flux treatment without requiring waste liquid treatment, and the load on the environment is also small. In addition, since there is no problem of gas evolution, a high quality sputter film can be formed.
再者,依據本實施形態,由於支承板本體311為以熱膨脹係數較小的Ti來形成,故因熱而引起之翹曲或變形比較少。因此,靶材32即使如ITO燒結體般為脆性高的材料,也不會產生破裂或龜裂,可以穩定地來維持靶材32。Further, according to the present embodiment, since the support plate main body 311 is formed of Ti having a small thermal expansion coefficient, warpage or deformation due to heat is relatively small. Therefore, even if the target material 32 is a material having high brittleness like the ITO sintered body, cracking or cracking does not occur, and the target 32 can be stably maintained.
依據本發明人等的估算,在寬200mm、長度3000mm、厚度16mm的板狀支承板上,黏接寬度200mm、長度2700mm、厚度8mm的ITO靶材之靶材總成中,Cu製支承板的靶材之翹曲量為4.3mm時,則Ti製支承板的靶材之翹曲量可以降低到1.0mm為止。According to the estimation by the inventors of the present invention, in a plate-shaped support plate having a width of 200 mm, a length of 3000 mm, and a thickness of 16 mm, a target assembly of an ITO target having a width of 200 mm, a length of 2700 mm, and a thickness of 8 mm is bonded, and a Cu-made support plate is used. When the amount of warpage of the target is 4.3 mm, the amount of warpage of the target of the Ti-supported plate can be reduced to 1.0 mm.
以上,雖說明有關本發明之實施形態,但本發明並沒有限定在此等實施形態,可根據本發明的技術思想而進行各種之變形。The embodiments of the present invention have been described above, but the present invention is not limited to the embodiments, and various modifications can be made based on the technical idea of the present invention.
例如在以上之實施形態中,支承板及靶材係分別以同種之金屬材料來形成,但並不限定此等,也可以分別以異種之金屬材料來形成。For example, in the above embodiment, the support plate and the target are formed of the same metal material, but the invention is not limited thereto, and may be formed of a different metal material.
此外,構成金屬化層12、22的合金相並不僅限定母材及金屬化金屬之合金,也可以為此等之混合相、化合物相,也可為金屬化金屬單相。Further, the alloy phase constituting the metallization layers 12 and 22 is not limited to an alloy of a base material and a metallization metal, and may be a mixed phase or a compound phase or a metallized metal single phase.
再者,金屬板312係與支承板本體311之接合面311a之全區域接合,但並不限定於此,也可以如第10圖所示之金屬板312接合在接合面311a之一部份區域。Further, the metal plate 312 is joined to the entire area of the joint surface 311a of the support plate main body 311, but the present invention is not limited thereto, and the metal plate 312 shown in Fig. 10 may be joined to a part of the joint surface 311a. .
此外,如第11圖所示,金屬板312亦可分割成複數個分割片121而接合在接合面311a。藉此,可以抑制起因於支承板本體311與金屬板312的熱膨脹係數差所導致之支承板的翹曲或變形。各分割片121的形狀及大小可以為相同者,也可以為相異者。分割片121的配置間隔並無特別限定,例如可以在1mm以下。藉此,可以持續防止起因於熱膨脹係數差所導致之支承板31的翹曲或變形,且可以確保與接合層33的高密著性。Further, as shown in Fig. 11, the metal plate 312 may be divided into a plurality of divided pieces 121 and joined to the joint surface 311a. Thereby, warping or deformation of the support plate due to a difference in thermal expansion coefficient between the support plate main body 311 and the metal plate 312 can be suppressed. The shape and size of each of the divided pieces 121 may be the same or different. The arrangement interval of the divided pieces 121 is not particularly limited, and may be, for example, 1 mm or less. Thereby, warping or deformation of the support plate 31 due to a difference in thermal expansion coefficient can be continuously prevented, and high adhesion to the bonding layer 33 can be ensured.
1、31...支承板1, 31. . . Support plate
2、32...靶材2, 32. . . Target
3、33...接合層3, 33. . . Bonding layer
10、30...靶材總成10, 30. . . Target assembly
11、311...支承板本體11, 311. . . Support plate body
11a、21a、311a...接合面11a, 21a, 311a. . . Joint surface
12、22...金屬化層12, 22. . . Metallization layer
15...電極棒15. . . Electrode rod
21...靶材本體twenty one. . . Target body
312...金屬板312. . . Metal plate
第1圖係示意表示本發明的一實施形態之靶材總成構成的剖面圖。Fig. 1 is a cross-sectional view schematically showing the configuration of a target assembly according to an embodiment of the present invention.
第2圖係示意表示本發明的一實施形態之支承板構成的剖面圖。Fig. 2 is a cross-sectional view schematically showing the configuration of a support plate according to an embodiment of the present invention.
第3圖係示意表示本發明的一實施形態之支承板構成的變形例之剖面圖。Fig. 3 is a cross-sectional view showing a modification of the configuration of the support plate according to the embodiment of the present invention.
第4圖係說明本發明的一實施形態之支承板製造方法的示意圖。Fig. 4 is a schematic view showing a method of manufacturing a support plate according to an embodiment of the present invention.
第5圖係示意表示本發明的一實施形態之靶材構成之剖面圖。Fig. 5 is a cross-sectional view showing the configuration of a target according to an embodiment of the present invention.
第6圖係示意表示本發明的其他實施形態之靶材總成構成的剖面圖。Fig. 6 is a cross-sectional view schematically showing the configuration of a target assembly according to another embodiment of the present invention.
第7圖係示意表示本發明的其他實施形態之支承板構成的分解剖面圖。Fig. 7 is an exploded cross-sectional view showing the structure of a support plate according to another embodiment of the present invention.
第8圖係示意表示本發明的其他實施形態之支承板變形例的剖面圖。Fig. 8 is a cross-sectional view schematically showing a modification of the support plate according to another embodiment of the present invention.
第9圖(A)及(B)係說明本發明的其他實施形態之支承板製造方法的示意圖。Fig. 9 (A) and (B) are views showing a method of manufacturing a support plate according to another embodiment of the present invention.
第10圖係表示本發明的其他實施形態之支承板的變形例之圖,(A)係平面圖、(B)係側面圖。Fig. 10 is a view showing a modification of the support plate according to another embodiment of the present invention, wherein (A) is a plan view and (B) is a side view.
第11圖係表示本發明的其他實施形態之支承板的其他變形例之圖,(A)係平面圖、(B)係側面圖。Fig. 11 is a view showing another modification of the support plate according to another embodiment of the present invention, wherein (A) is a plan view and (B) is a side view.
11...支承板本體11. . . Support plate body
11a...接合面11a. . . Joint surface
12...金屬化層12. . . Metallization layer
Claims (18)
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KR (1) | KR20130099109A (en) |
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CN104711525B (en) * | 2013-12-13 | 2018-01-26 | 吉坤日矿日石金属株式会社 | Sputtering target and its manufacture method |
KR101923292B1 (en) * | 2014-07-31 | 2018-11-28 | 제이엑스금속주식회사 | BACKING PLATE WITH DIFFUSION BONDING OF ANTICORROSIVE METAL AND Mo OR Mo ALLOY AND SPUTTERING TARGET-BACKING PLATE ASSEMBLY PROVIDED WITH SAID BACKING PLATE |
US10384417B2 (en) * | 2015-01-20 | 2019-08-20 | Sharp Kabushiki Kaisha | Deposition mask and manufacturing method |
JP2016160522A (en) * | 2015-03-05 | 2016-09-05 | 日立金属株式会社 | Target |
KR20220153675A (en) * | 2015-03-18 | 2022-11-18 | 유미코아 | Lithium-containing transition metal oxide target |
JP6689309B2 (en) * | 2018-03-26 | 2020-04-28 | Jx金属株式会社 | Sputtering target member, sputtering target assembly, and method for manufacturing sputtering target member |
CN109136868A (en) * | 2018-09-13 | 2019-01-04 | 先导薄膜材料(广东)有限公司 | The binding method of ITO target or other ceramic targets |
CN111411329A (en) * | 2019-01-08 | 2020-07-14 | 天津中能锂业有限公司 | Method and apparatus for manufacturing planar lithium target assembly |
JP7376742B1 (en) | 2023-05-22 | 2023-11-08 | 株式会社アルバック | Target assembly and target assembly manufacturing method |
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JPS51107251A (en) * | 1975-03-19 | 1976-09-22 | Oki Electric Ind Co Ltd | Handazuke moshikuha rozukejinoshitajishorihoho |
JPS5935990B2 (en) * | 1978-08-15 | 1984-08-31 | 株式会社井上ジャパックス研究所 | Electric discharge coating processing equipment |
JPS60224779A (en) * | 1984-04-20 | 1985-11-09 | Seiko Epson Corp | Bonding method of sputtering target |
JPH0230382B2 (en) * | 1985-04-26 | 1990-07-05 | Mitsubishi Metal Corp | REIKYAKUITATSUKITAAGETSUTONOSEIZOHOHO |
JPS6267168A (en) * | 1985-09-19 | 1987-03-26 | Toshiba Corp | Target parts |
JPS62267067A (en) * | 1986-05-13 | 1987-11-19 | Kobe Steel Ltd | Brazing method of target for sputtering |
JPH069735B2 (en) * | 1986-07-25 | 1994-02-09 | 田中貴金属工業株式会社 | Method for producing target for sputtering |
JPS63160038A (en) * | 1986-12-22 | 1988-07-02 | Inoue Japax Res Inc | Manufacture of magneto-optical recording material |
JPH06158298A (en) * | 1992-11-17 | 1994-06-07 | Mitsubishi Electric Corp | Plasma treating device |
JPH06228746A (en) * | 1993-02-05 | 1994-08-16 | Tokyo Tungsten Co Ltd | High melting point metallic sputtering target |
JP3554737B2 (en) * | 1997-04-16 | 2004-08-18 | 株式会社小松製作所 | Backing plate for sputtering target and sputtering target |
JP3967067B2 (en) * | 1999-06-15 | 2007-08-29 | 東ソー株式会社 | Sputtering target |
US6376281B1 (en) * | 2000-10-27 | 2002-04-23 | Honeywell International, Inc. | Physical vapor deposition target/backing plate assemblies |
KR101335158B1 (en) * | 2005-12-28 | 2013-12-02 | 플란제 에스이 | Sputtering target structure |
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