TWI564413B - Backing plate, target assembly and target for supporting - Google Patents

Description

Support plate, target assembly and target for sputtering

The present invention relates to a support plate, a target assembly, and a sputtering target having high adhesion to a bonding material (weld material).

As a technique for forming a thin film on a substrate, a sputtering method is known. Since the target for sputtering is heated by the sputtering action of ions in the plasma, it is used in a state of being joined to the support plate for cooling. Brazing is widely used for bonding the target of the support plate.

The target used in the sputtering is required to withstand the temperature rise or thermal stress at the time of film formation, and the amount of released gas is small. In particular, the heat resistance of the target requires high adhesion to the target and the support plate. Therefore, it is required to have sufficient wettability with the target material and the support plate, and the metallization by the plating, vapor deposition, and flux is conventionally performed as the underlayer treatment of the joint surface between the target and the support plate. (metallized) processing (refer to, for example, Patent Document 1).

[Previous Technical Literature] (Patent Literature)

Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-257510

However, by metallization treatment of electroplating, vapor deposition, or fluxing, since the surface of the base material is coated with a metallized layer, the adhesion to the base material is poor, and there is a problem of peeling. In addition, the metallization treatment by plating or flux coating requires a disposal cost of the waste liquid and a large environmental load. In addition, the flux has a problem of releasing gas, and it is difficult to form a film of high quality.

In view of the above, it is an object of the present invention to provide a support plate, a target assembly, and a sputtering target which are excellent in adhesion to a bonding material.

In order to achieve the above object, a support plate according to an aspect of the present invention includes a support plate body and an adhesion layer.

The support plate body has a first surface facing the sputtering target and is formed of a first metal material.

The adhesion layer has a second surface coated with a bonding material made of indium, tin or an alloy thereof, and includes a second metal material having higher wettability with respect to the bonding material than the first metal material. And formed on the first surface.

Further, a target assembly according to an aspect of the present invention includes a target for sputtering, a support plate body, a bonding layer, and an adhesion layer.

The support plate system includes a first surface facing the target and is formed of a first metal material.

The bonding layer is provided between the target and the first surface, and is formed of a bonding material.

The adhesion layer includes a second surface to which the bonding material is applied, and a second metal material having higher wettability with respect to the bonding material than the first metal material, and the first surface is formed.

Moreover, the target for sputtering of one embodiment of the present invention includes a target body and a metallization layer.

The target material system includes a joint surface on which a bonding material made of indium, tin or an alloy thereof is applied, and is formed of a first metal material.

The metallization layer is formed on the joint surface and is composed of an alloy phase of the first metal material and the second metal material, and the second metal material is higher than the first metal material for the joint material. Wettability.

[Best Mode for Carrying Out the Invention]

A support plate according to an embodiment of the present invention includes a support plate body and an adhesion layer.

The support plate system has a first surface facing the sputtering target and is formed of a first metal material.

The adhesion layer includes a second surface to which a bonding material made of an alloy of indium, tin or the like is applied, and a second metal material having higher wettability to the bonding material than the first metal material. And formed on the first surface described above.

In the above-mentioned support plate, since the adhesion layer is formed of a material having a higher wettability to the bonding material than the constituent material of the support plate body, high adhesion can be obtained between the bonding material and the bonding material.

The adhesion layer may be formed of a metallization layer formed by an alloy phase of the first metal material and the second metal material.

Thereby, the metallization layer can be integrated with the first surface of the support plate main body, and the metallization layer can be prevented from being peeled off from the first surface. Further, since the above alloy phase contains a metal material having high wettability to the bonding material, the adhesion to the bonding material can be improved.

The first metal material and the second metal material forming the metallization layer of the support plate are not particularly limited and may be arbitrarily selected. For example, examples of the first metal material include copper, aluminum, titanium, molybdenum, or an alloy thereof, or stainless steel. Examples of the second metal material include copper, nickel, aluminum, and tin. , indium, gold, silver, or alloys of these. Among them, for example, the first metal material is molybdenum or an alloy thereof, and the second metal material is a combination of nickel or an alloy thereof.

The method of forming the above metallization layer is also not particularly limited, and for example, a metallization layer can be formed by discharge treatment. Thereby, the metallization layer can be easily formed.

The adhesion layer may be formed of a metal plate formed of the second metal material and bonded to the first surface.

The metal plate is joined to the first surface of the support plate body to form a metallization layer of the support plate body. Since the metal plate is formed of a material having a higher wettability to the bonding material than the constituent material of the support plate body, high adhesion can be obtained between the metal plate and the bonding material. Further, since the metal plate is integrally joined to the support plate body, a high peeling strength to the support plate body can be obtained.

The joining method of the metal plate to the support plate body is not particularly limited, and for example, explosive joining, diffusion bonding, welding, or the like can be applied. Thereby, it is possible to avoid the problem of the disposal of the waste liquid or the generation of the released gas.

The first metal material forming the support plate main body and the second metal material forming the metal plate are not particularly limited and may be arbitrarily selected. For example, as the first metal material, Ti (titanium), a Ti alloy or stainless steel can be used, and in the case of the second metal material, Cu (copper), Ni (nickel), Al (aluminum) or the like can be used. Alloys.

Since the support plate made of Ti (titanium), Ti alloy or stainless steel as a base material has a large Young's modulus and high strength, the expansion due to water pressure is small. Therefore, such a support plate is used, for example, in a target having high brittleness like a sintered target. Since Ti and Ti alloys have a small thermal expansion coefficient, such a material as a support plate for a substrate is, for example, ITO (Indium Tin Oxide), GZO (Gallium-doped Zinc Oxide), or the like. Used in low thermal expansion targets. Since Ti, Ti alloy, stainless steel, etc. have low wettability with a bonding material such as In (indium) or Sn (tin), a metal plate formed of Cu, Ni, Al or the like is formed on the joint surface, and it is ensured. Good adhesion to the above bonding material.

The metal plate may be divided into a plurality of divided pieces and joined to the first surface. Thereby, warpage or deformation of the support plate due to the difference in thermal expansion coefficient between the support plate main body and the metal plate can be suppressed.

A target assembly according to an embodiment of the present invention includes a target for sputtering, a support plate body, a bonding layer, and an adhesion layer.

The support plate system has a first surface facing the target and is formed of a first metal material.

The bonding layer is provided between the target and the first surface, and is formed of a bonding material.

The adhesion layer has a second surface to which the bonding material is applied, and a second metal material having a higher wettability to the bonding material than the first metal material, and is formed on the first surface.

In the above target assembly, the adhesion layer is formed of a material having a higher wettability to the bonding material than the constituent material of the support plate body. Therefore, high adhesion can be obtained between the bonding material and the bonding material.

A target for sputtering according to an embodiment of the present invention includes a target body and a metallization layer.

The above target system has a joint surface coated with a bonding material formed of indium, tin or an alloy thereof, and is formed of a first metal material.

The metallization layer is formed on the joint surface and is composed of an alloy phase of the first metal material and the second metal material, and the second metal material has a higher pressure than the first metal material for the joint material. Wet.

The metallization layer is composed of an alloy phase of the first and second metal materials. Thereby, the joint surface of the metallized layer and the target body can be integrated, and the metallized layer can be prevented from peeling off from the joint surface. Further, since the above alloy phase contains a metal material having high wettability to the bonding material, the adhesion to the bonding material can be improved.

The first metal material and the second metal material forming the metallization layer of the target are not particularly limited and may be arbitrarily selected. For example, examples of the first metal material include copper, aluminum, titanium, molybdenum, or an alloy thereof, or stainless steel. Examples of the second metal material include copper, nickel, aluminum, and tin. Indium, gold, silver, or alloys of these. Among them, for example, a first metal material is molybdenum or an alloy thereof, and a second metal material is a combination of nickel or an alloy thereof.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First embodiment> [Target assembly]

Fig. 1 is a cross-sectional view schematically showing a target assembly according to an embodiment of the present invention. The target assembly 10 of the present embodiment includes a support plate body 1, a target 2, and a bonding layer 3.

The bonding layer 3 is formed by bonding a bonding material of the support plate main body 1 and the target material 2, for example, a welding material composed of In, Sn, or the like.

The target assembly 10 is provided in a sputtering apparatus (not shown). The support plate 1 is connected to a direct current, alternating current or RF power source, and the target 2 is disposed to face the substrate surface in the vacuum chamber at a predetermined interval. The target assembly 10 has a structure cooled by, for example, cooling water, and the water-cooled support plate 1 prevents excessive temperature rise of the target 2 during sputtering, and prevents peeling of the target 2 due to melting of the bonding layer 3. Wait. The target assembly 10 is combined with a magnetic field unit (not shown) to constitute a magnetron sputtering cathode.

[support plate]

Fig. 2 is a cross-sectional view of the support plate 1. The support plate 1 has a metal support plate body 11 and a metallization layer 12 (first metallization layer).

The support plate body 11 has a joint surface 11a. The target 2 is joined to the joint surface 11a via the joint layer 3. Various metal materials are used for the metal material (first metal material) forming the support plate main body 11, and examples thereof include Cu, Al, Ti, Mo, or alloys thereof, or stainless steel.

The support plate main body 11 has a circulation passage through which cooling water is not shown. The support plate main body 11 is not limited to the structure having the above-described circulation passage therein, and may be a cooling surface that is in contact with the cooling water on the surface opposite to the joint surface 11a. Further, the support plate main body 11 is not limited to an example in which a simple plate shape is formed. For example, as shown in Fig. 3, a cross-sectional shape called a so-called hat type may be used.

The metallization layer 12 is formed on the joint surface 11a. The metallization layer 12 is a metal material (the first metal material) constituting the support plate main body 11 and a metallization metal having a higher wettability than the metal material (In, Sn, etc.) constituting the bonding layer 3 than the metal material. The alloy phase of the (second metal material) is formed. The metallization layer 12 functions as an adhesion layer that enhances the adhesion between the support plate main body 11 and the bonding layer 3.

Examples of the metal material having high wettability with respect to the bonding material of In, Sn, and the like include Cu, Ni, Al, Sn, In, Au, Ag, or the like, in order to constitute the metal of the support plate body 11. Choose the right type of material. In the present embodiment, the support plate main body 11 is made of Mo, and the metallized metal is made of Ni.

Fig. 4 is a schematic view showing a method of forming the metallization layer 12. The metallization layer 12 is formed by a discharge process. As shown in Fig. 4, the electrode rod 15 for discharge is disposed to face the joint surface 11a with a predetermined gap therebetween. The electrode rod 15 is formed of a metallized metal (in this example, Ni). At the metallization metal treatment of the joint surface 11a, a discharge is generated between the tip end of the electrode rod 15 and the joint surface 11a by applying a predetermined voltage between the electrode rod 15 and the support plate body 11. Thereby, the base material (Mo) forming the joint surface 11a is alloyed by the Ni particles scattered from the electrode rod 15. The electrode rod 15 is moved on the joint surface 11a, whereby the metallization layer 12 is formed on the entire surface of the joint surface 11a.

The metallization metal treatment conditions of the joint surface 11a are not particularly limited, and for example, a pulse power source having a voltage of 150 V and a capacitor capacity of 40 μF or a pulse power source having a voltage of 100 V and a capacitor capacity of 10 μF can be used as the power source. The thickness of the metallization layer 12 is not particularly limited as long as the surface layer of the joint surface 11a can be metalized.

Since the metallization layer 12 is integrally formed with the joint surface 11a of the support plate main body 11, the metallization layer 12 is prevented from being peeled off from the joint surface 11a. Further, since the alloy phase constituting the metallization layer 12 contains a metal material (metallized metal) having high wettability with respect to the bonding material, adhesion to the bonding material can be improved.

[target]

Fig. 5 is a cross-sectional view of the target 2. The target 2 has a metal target body 21 and a metallization layer 22 (second metallization layer).

The target body 21 has a joint surface 21a. The support plate main body 1 is joined to the joint surface 21a via the joint layer 3. Various metal materials are used for the metal material (first metal material) forming the target body 21, and examples thereof include Cu, Al, Ti, Mo, or alloys thereof, stainless steel, and the like.

The target body 21 may be a cast body of a raw material metal or a sintered body of a raw material powder. The target body 21 can be individually adjusted to suit the size, thickness, shape, and texture of the sputtering application.

The metallization layer 22 is formed on the joint surface 21a. The metallization layer 22 is made of a base material (first metal material) constituting the target body 21 and a metallization metal having higher wettability with respect to the metal material constituting the bonding material 3 (In, Sn, etc.). The alloy phase of the (second metal material) is formed. The metallization layer 22 has a function of an adhesion layer that enhances the adhesion between the support plate main body 11 and the bonding layer 3.

The metallized metal is exemplified by Cu, Ni, Al, Sn, In, Au, Ag, or the like, and is appropriately selected depending on the kind of the metal material constituting the target body 21. In the present embodiment, the target body 21 is made of Mo, and the metallized metal is made of Ni. The metallization layer 22 is formed by the same discharge treatment as the method of forming the metallization layer 12 of the joint surface 11a of the support plate main body 11.

Since the metallization layer 22 is integrally formed with the joint surface 21a of the target body 21, the metallization layer 22 is prevented from being peeled off from the joint surface 21a. Further, since the alloy phase constituting the metallization layer 22 contains a metal material (metallized metal) having high wettability with respect to the bonding material, adhesion to the bonding material can be improved.

The support plate main body 1 and the target material 2, which are configured as described above, are adhered to each other via the bonding material in a molten state in a state in which the respective joint faces 11a and 21a are opposed to each other. At this time, since the metallized layers 12 and 22 are formed on the respective joint faces 11a and 21a, it is possible to ensure good wettability with the joint material over the entire joint surface. Therefore, the bonding layer 3 formed by curing the bonding material can provide good adhesion to both the support plate main body 1 and the target material 2.

Further, according to the present embodiment, since the metallization layers 12 and 22 are formed by the discharge treatment, since the waste liquid treatment is not required unlike the plating or the flux treatment, the load on the environment is small. In addition, the metallization metallization by the discharge treatment does not cause a problem of gas evolution, so that a high-quality sputtering film can be formed.

<Second embodiment> [Target assembly]

Fig. 6 is a schematic cross-sectional view showing a target assembly according to another embodiment of the present invention. The target assembly 30 of the present embodiment has a support plate 31, a target 32, and a bonding layer 33.

The bonding layer 33 is formed by bonding a bonding material of the support plate 31 and the target 32, for example, a consumable material composed of In, Sn, or the like.

The target assembly 30 is provided in a sputtering apparatus (not shown). The support plate 31 is connected to a direct current, alternating current or RF power source, and the target 32 is disposed to face the substrate surface in the vacuum chamber at a predetermined interval. The target assembly 30 has a structure cooled by cooling water, for example, and the support plate 31 is water-cooled to prevent excessive temperature rise of the target 32 during sputtering, and the target 32 is peeled off by melting of the bonding layer 33. The target assembly 30 is combined with a magnetic field unit (not shown) to constitute a magnetron-type sputtering cathode.

[support plate]

Fig. 7 is an exploded cross-sectional view of the support plate 31. The support plate 31 has a structure in which a metal support plate body 311 and a metal plate 312 are laminated.

The support plate body 311 has a joint surface 311a (first surface). The target 32 is joined to the joint surface 311a via the joint layer 33. The metal material (first metal material) forming the support plate main body 311 is made of various metal materials, and examples thereof include Cu, Al, Ti, Mo, or alloys thereof, or stainless steel. In the present embodiment, the support plate main body 311 is formed of Ti, a Ti alloy, stainless steel or the like.

Ti, Ti alloy and stainless steel have large Young's modulus and high strength. Therefore, Ti, Ti alloy or stainless steel is used as the support plate of the substrate, and the expansion due to the water pressure is small. Therefore, a highly brittle target such as a sintered target uses such a support plate. Further, since Ti and Ti alloys have a small coefficient of thermal expansion, these materials are used as a support plate for a substrate, for example, ITO (Indium Tin Oxide), GZO (Gallium-doped Zinc Oxide; Gallium zinc oxide) and other targets with small thermal expansion.

The support plate main body 311 has a circulation passage of cooling water (not shown) inside. The support plate main body 311 is not limited to the structure having the above-described circulation passage therein, and may be a cooling surface that is in contact with the cooling water on the surface opposite to the joint surface 311a. Further, the support plate main body 311 is not limited to an example in which a simple plate shape is formed, and may be a cross-sectional shape called a hat type as shown in Fig. 8.

The metal plate 312 has a joint surface 312a (second surface). The joint surface 312a is formed on the opposite side of the surface opposite to the support plate body 311. A bonding material constituting the bonding layer 33 is applied to the bonding surface 312a.

The metal plate 312 is joined to the joint surface 311a to form a metallization layer of the support plate body 311. The metal plate 312 is made of a metal substrate (first metal material) constituting the support plate main body 311 and a metallized metal having high wettability with respect to the metal material (In, Sn, etc.) constituting the bonding layer 33 ( The second metal material is composed of. The metal plate 312 functions as an adhesive layer that enhances the adhesion between the support plate main body 311 and the bonding layer 33. The thickness of the metal plate 312 is not particularly limited, and is, for example, 0.1 mm or more and 1.0 mm or less.

The metal material having high wettability with respect to the bonding material such as In, Sn, etc., may be exemplified by Cu, Ni, Al, Sn, In, Au, Ag or the like, in order to constitute the metal material of the support plate body 311. Choose the appropriate type. In the present embodiment, the metal plate 312 is formed of Cu, Ni, Al or the like.

In the present embodiment, the constituent material of the support plate main body 311 is Ti, a Ti alloy or stainless steel. Since Ti, Ti alloy, stainless steel, and the like have low wettability with a bonding material such as In or Sn, the metal plate 321 formed of Cu, Ni, Al, or the like is formed on the bonding surface 311a, thereby ensuring good adhesion to the bonding material. Sexuality.

The method of joining the metal sheets to the support plate body is not particularly limited, and in the present embodiment, the explosion bonding method is employed.

The blast bonding method is a method in which high energy generated in a very short time when a gunpowder erupts is utilized for bonding between metals, which is also called burst welding or burst crimping. Fig. 9 is a view showing a method of joining the support plate body 311 and the metal plate 312 by explosion bonding. As shown in Fig. 9(A), a metal plate 312 is disposed opposite to the joint surface 311a of the support plate main body 311. A gunpowder layer 342 is provided on the back side (upper side in the drawing) of the metal plate 312 via the cushioning material 341, and a detonator 343 is attached to one end of the gunpowder layer 342 (left end in the drawing). As shown in Fig. 9(B), the detonator 343 is detonated and the gunpowder layer 342 is sequentially ejected to the right in the figure. The metal plate 312 is formed at a predetermined angle to collide with the joint surface 311a, and the oxide film or the like on the metal surface is removed by the metal jet generated from the collision point. The surfaces of the metal plate 312 and the joint surface 311a are sequentially joined to each other from the collision point in the above manner.

In the joining step of the support plate main body 311 and the metal plate 312, in addition to the above, other solid phase joining methods such as a friction bonding method or a diffusion bonding method may be employed, or a welding method using a welding material may be employed.

[target]

The target 32 may be a cast body of a raw material metal or a sintered body of a raw material powder. The target material 32 of the present embodiment is formed of a sintered body made of a transparent conductive oxide such as ITO or GZO. The target 32 is individually sized to suit the size, thickness, shape, and texture of the sputtering application.

The support plate 31 and the target member 32, which are configured as described above, are adhered to each other via a bonding material in a molten state in a state in which the respective bonding faces are opposed to each other. At this time, the joint surface on the support plate 31 side is covered by the metal plate 312 which is made of a material having a higher wettability with respect to the constituent material of the support plate main body 311, so that the joint surface 312a can be secured. Good wettability of the whole area and the joint material. The bonding layer 33 is formed by hardening a bonding material.

According to the above embodiment, good adhesion between the support plate 31 and the bonding layer 33 can be obtained. Further, since the metal plate 312 is integrally joined to the support plate main body 311, high peel strength can be obtained for the support plate main body 311.

Further, according to the present embodiment, since the metal plate 312 forming the metallization layer is integrally joined to the support plate main body 311, it is different from the plating or flux treatment without requiring waste liquid treatment, and the load on the environment is also small. In addition, since there is no problem of gas evolution, a high quality sputter film can be formed.

Further, according to the present embodiment, since the support plate main body 311 is formed of Ti having a small thermal expansion coefficient, warpage or deformation due to heat is relatively small. Therefore, even if the target material 32 is a material having high brittleness like the ITO sintered body, cracking or cracking does not occur, and the target 32 can be stably maintained.

According to the estimation by the inventors of the present invention, in a plate-shaped support plate having a width of 200 mm, a length of 3000 mm, and a thickness of 16 mm, a target assembly of an ITO target having a width of 200 mm, a length of 2700 mm, and a thickness of 8 mm is bonded, and a Cu-made support plate is used. When the amount of warpage of the target is 4.3 mm, the amount of warpage of the target of the Ti-supported plate can be reduced to 1.0 mm.

The embodiments of the present invention have been described above, but the present invention is not limited to the embodiments, and various modifications can be made based on the technical idea of the present invention.

For example, in the above embodiment, the support plate and the target are formed of the same metal material, but the invention is not limited thereto, and may be formed of a different metal material.

Further, the alloy phase constituting the metallization layers 12 and 22 is not limited to an alloy of a base material and a metallization metal, and may be a mixed phase or a compound phase or a metallized metal single phase.

Further, the metal plate 312 is joined to the entire area of the joint surface 311a of the support plate main body 311, but the present invention is not limited thereto, and the metal plate 312 shown in Fig. 10 may be joined to a part of the joint surface 311a. .

Further, as shown in Fig. 11, the metal plate 312 may be divided into a plurality of divided pieces 121 and joined to the joint surface 311a. Thereby, warping or deformation of the support plate due to a difference in thermal expansion coefficient between the support plate main body 311 and the metal plate 312 can be suppressed. The shape and size of each of the divided pieces 121 may be the same or different. The arrangement interval of the divided pieces 121 is not particularly limited, and may be, for example, 1 mm or less. Thereby, warping or deformation of the support plate 31 due to a difference in thermal expansion coefficient can be continuously prevented, and high adhesion to the bonding layer 33 can be ensured.

1, 31. . . Support plate

2, 32. . . Target

3, 33. . . Bonding layer

10, 30. . . Target assembly

11, 311. . . Support plate body

11a, 21a, 311a. . . Joint surface

12, 22. . . Metallization layer

15. . . Electrode rod

twenty one. . . Target body

312. . . Metal plate

Fig. 1 is a cross-sectional view schematically showing the configuration of a target assembly according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view schematically showing the configuration of a support plate according to an embodiment of the present invention.

Fig. 3 is a cross-sectional view showing a modification of the configuration of the support plate according to the embodiment of the present invention.

Fig. 4 is a schematic view showing a method of manufacturing a support plate according to an embodiment of the present invention.

Fig. 5 is a cross-sectional view showing the configuration of a target according to an embodiment of the present invention.

Fig. 6 is a cross-sectional view schematically showing the configuration of a target assembly according to another embodiment of the present invention.

Fig. 7 is an exploded cross-sectional view showing the structure of a support plate according to another embodiment of the present invention.

Fig. 8 is a cross-sectional view schematically showing a modification of the support plate according to another embodiment of the present invention.

Fig. 9 (A) and (B) are views showing a method of manufacturing a support plate according to another embodiment of the present invention.

Fig. 10 is a view showing a modification of the support plate according to another embodiment of the present invention, wherein (A) is a plan view and (B) is a side view.

Fig. 11 is a view showing another modification of the support plate according to another embodiment of the present invention, wherein (A) is a plan view and (B) is a side view.

11. . . Support plate body

11a. . . Joint surface

12. . . Metallization layer

Claims (18)

A support plate having a support plate body having a first surface facing a sputtering target and being formed of a first metal material, and an adhesion layer coated with indium, tin or the like The second surface of the bonding material formed of the alloy, and the second metal material having higher wettability with respect to the bonding material than the first metal material, and formed on the first surface. The support plate according to claim 1, wherein the adhesion layer is formed of a metallization layer formed by an alloy phase of the first metal material and the second metal material. The support plate according to claim 2, wherein the metallization layer is formed by a discharge treatment. The support plate according to claim 2, wherein the first metal material is molybdenum or a molybdenum alloy, and the second metal material is nickel or a nickel alloy. The support plate according to claim 1, wherein the adhesion layer is formed of a metal plate formed of the second metal material and bonded to the first surface. The support plate according to claim 5, wherein the metal plate is joined by explosion bonding, diffusion bonding or welding of the first surface. The support plate according to claim 5, wherein the first metal material is titanium, titanium alloy or stainless steel. The second metal material is copper, nickel, aluminum or an alloy thereof. The support plate according to claim 5, wherein the metal plate is divided into a plurality of divided pieces and joined to the first surface. A target assembly includes: a target for sputtering; a support plate body having a first surface facing the target and formed of a first metal material; and a bonding layer provided on the target and the aforementioned The first surface is formed of a bonding material; and the adhesion layer includes a second surface to which the bonding material is applied, and includes a second material having higher wettability with respect to the bonding material than the first metal material. A metal material is formed on the first surface. The target assembly according to claim 9, wherein the adhesion layer is formed of a metallization layer formed by an alloy phase of the first metal material and the second metal material. The target assembly according to claim 9 or 10, wherein the bonding material is formed of indium, tin or an alloy thereof. The target assembly according to claim 9 or 10, wherein the first metal material is molybdenum or a molybdenum alloy, and the second metal material is nickel or a nickel alloy. The target assembly according to claim 9, wherein the adhesion layer is formed of a metal plate formed of the second metal material and bonded to the first surface. The target assembly of claim 13, wherein the foregoing The bonding material is a support plate formed of indium, tin or alloys thereof. The target assembly according to claim 9, wherein the first metal material is titanium, a titanium alloy or stainless steel, and the second metal material is copper, nickel, aluminum or the like. Alloy. A target for sputtering includes a target body including a bonding surface coated with a bonding material formed of an alloy of indium, tin, or the like, and formed of a first metal material, and a metallized layer formed The joint surface is composed of the first metal material and an alloy phase of the second metal material having a higher wettability than the first metal material. The target for sputtering according to claim 16, wherein the metallization layer is formed by a discharge treatment. The target for sputtering according to claim 16, wherein the first metal material is molybdenum or a molybdenum alloy, and the second metal material is nickel or a nickel alloy.