JPH069735B2 - Method for producing target for sputtering - Google Patents

Method for producing target for sputtering

Info

Publication number
JPH069735B2
JPH069735B2 JP17494486A JP17494486A JPH069735B2 JP H069735 B2 JPH069735 B2 JP H069735B2 JP 17494486 A JP17494486 A JP 17494486A JP 17494486 A JP17494486 A JP 17494486A JP H069735 B2 JPH069735 B2 JP H069735B2
Authority
JP
Japan
Prior art keywords
target
bonding
backing plate
sputtering
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17494486A
Other languages
Japanese (ja)
Other versions
JPS6333174A (en
Inventor
弘之 毛塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Priority to JP17494486A priority Critical patent/JPH069735B2/en
Publication of JPS6333174A publication Critical patent/JPS6333174A/en
Publication of JPH069735B2 publication Critical patent/JPH069735B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、スパッタリング用ターゲットの製造方法に関
する。
TECHNICAL FIELD The present invention relates to a method for manufacturing a sputtering target.

(従来の技術) 従来、スパッタリング用ターゲットを製造するには、第
2図に示す如くターゲット材料1とバッキングプレート
2とをメタルボンディング材3にて接合している。
(Prior Art) Conventionally, in order to manufacture a sputtering target, a target material 1 and a backing plate 2 are joined by a metal bonding material 3 as shown in FIG.

(発明が解決しようとする問題点) ところで、ターゲット材料1は、メタルボンディング材
3からの拡散による汚染を防ぐ為、バリアー層が必要で
あり、またそのバリアー層は濡れ性が良くなくては接合
が不十分となる。また、バッキングプレート2もステン
レス鋼の場合は、濡れ性を改善する層が必要となる。
(Problems to be Solved by the Invention) By the way, the target material 1 needs a barrier layer in order to prevent contamination due to diffusion from the metal bonding material 3, and the barrier layer must have a good wettability for bonding. Is insufficient. If the backing plate 2 is also made of stainless steel, a layer that improves wettability is required.

従来、ターゲット材料1のバリアー層及びバッキングプ
レート2の濡れ性改善層をCu層となしていたが、メタ
ルボンディング材3がInの場合は良いが、Pb−Sn
(半田)を使用した場合は、拡散によりCu層がくわれ
てしまう。
Conventionally, the barrier layer of the target material 1 and the wettability improving layer of the backing plate 2 are made of Cu layers. However, when the metal bonding material 3 is In, it is good, but Pb-Sn.
When (solder) is used, the Cu layer is broken due to diffusion.

また前記バリアー層及び濡れ性改善層をNi層とする
と、メタルボンディング材3がPb−Sn(半田)の場
合は良いが、Inを使用した場合は、Ni層にInが濡
れにくい為、良好な接合ができない。
Further, when the barrier layer and the wettability improving layer are Ni layers, it is preferable when the metal bonding material 3 is Pb-Sn (solder), but when In is used, it is difficult to wet In to the Ni layer, which is preferable. Cannot be joined.

従って、ターゲット材料1のバリアー層及びバッキング
プレート2の濡れ性改善層を、Pb−Sn(半田)、I
nに共有の単一層では形成出来ない為、Ni(バリアー
層)+Cu(濡れ性改善層)の二層等の多層構造にしな
ければならないという問題点がある。
Therefore, the barrier layer of the target material 1 and the wettability improving layer of the backing plate 2 are formed of Pb-Sn (solder), I
Since a single layer shared by n cannot be formed, there is a problem that a multilayer structure such as two layers of Ni (barrier layer) + Cu (wettability improving layer) must be formed.

そこで本発明は、ターゲット材料のバリアー層及びバッ
キングプレートの濡れ性改善層を一層コーティングする
だけでターゲットを作ろうとするものである。
Therefore, the present invention is intended to make a target by only coating a barrier layer of a target material and a wettability improving layer of a backing plate.

(問題点を解決するための手段) 上記問題点を解決するための本発明の技術的手段は、タ
ーゲット材料の接合面及びバッキングプレートの接合面
に、Cuを基合金としてこれにCr、Co、Ni、Fe
の少なくとも一種を添加して成る合金を、夫々コーティ
ングし、然る後ターゲット材料とバッキングプレートの
コーティングした接合面をボンディング材にて接合し
て、ターゲットを作るものである。
(Means for Solving Problems) The technical means of the present invention for solving the above problems is to use a Cu-based alloy containing Cr, Co, and Co as a base alloy on the bonding surface of the target material and the bonding surface of the backing plate. Ni, Fe
Each of the alloys containing at least one of the above is coated, and then the target material and the backing plate coated joint surface are joined by a bonding material to form a target.

ターゲット材料及びバッキングプレートの接合面にコー
ティングする合金を、Cu基合金としてこれにCr、C
o、Ni、Feの少なくとも一種を添加して成る合金と
した理由は、Pb−Sn(半田)、Inのいずれのボン
ディング材に対しても濡れ性が良く、ボンディング材の
拡散を防止できて、くわれることがないからである。
The alloy for coating the target material and the bonding surface of the backing plate is a Cu-based alloy, and Cr, C
The reason why the alloy is formed by adding at least one of o, Ni, and Fe is that it has good wettability with respect to any bonding material of Pb-Sn (solder) and In, and can prevent diffusion of the bonding material. Because you will not be hurt.

(作用) このようにCuを基合金としてこれにCr、Co、N
i、Feの少なくとも一種を添加して成る合金を、ター
ゲット材料及びバッキングプレートの接合面にコーティ
ングした上で、両者をボンディング材にて接合すると、
前記合金層がボンディング材の拡散を防止するので、タ
ーゲット材料の汚染が防止され、また前記合金層はボン
ディング材との濡れ性が良好であるので、ターゲット材
料及びバッキングプレートの接合が良好に行われる。
(Function) As described above, using Cu as a base alloy, Cr, Co, N
When an alloy formed by adding at least one of i and Fe is coated on the bonding surfaces of the target material and the backing plate, and then both are bonded by a bonding material,
Since the alloy layer prevents the diffusion of the bonding material, the target material is prevented from being contaminated, and the alloy layer has good wettability with the bonding material, so that the target material and the backing plate are bonded well. .

(実施例) 本発明のスパッタリング用ターゲットの製造方法の一実
施例を図によって説明すると、第1図aに示す如く直径
130mm、厚さ1.6mmのPtより成るターゲット材料1の接
合面に、下記の表の左欄に示す成分組成、厚さの合金4
をスパッタリングによりコーティングし、また第1図b
に示す如く直径168mm、厚さ10mmのステンレス鋼より成
るバッキングプレート2の接合面に、前記と同じ成分組
成及び厚さの合金4をスパッタリングによりコーティン
グし、然る後第1図cにしめす如くターゲット材料1と
バッキングプレート2に合金4をコーティングした接合
面を、Pb−Sn(半田)及びInより成るボンディン
グ材3にて接合して、スパタリング用ターゲット5を製
造した。
(Example) An example of a method for manufacturing a sputtering target of the present invention will be described with reference to the drawings. As shown in FIG.
On the joint surface of the target material 1 made of Pt having a thickness of 130 mm and a thickness of 1.6 mm, the alloy 4 having the composition and thickness shown in the left column of the table below is used.
Was coated by sputtering, and FIG.
As shown in Fig. 1, the backing plate 2 made of stainless steel with a diameter of 168 mm and a thickness of 10 mm is coated with an alloy 4 having the same composition and thickness as the above by sputtering, and then the target as shown in Fig. 1c. The sputtering target 5 was manufactured by bonding the bonding surface of the material 1 and the backing plate 2 coated with the alloy 4 with the bonding material 3 made of Pb-Sn (solder) and In.

こうして製造したこのスパッタリング用ターゲット5と
従来例のスパッタリング用ターゲットにおけるターゲッ
ト材料1とバッキングプレート2との接合部の内部組織
を検査し、接合面積を線透過試験にて測定した処、下記
の表の右欄に示すような結果を得た。
The internal structure of the joint between the target material 1 and the backing plate 2 in the sputtering target 5 thus manufactured and the sputtering target of the conventional example was inspected, and the joint area was measured by the line transmission test. The results shown in the right column were obtained.

上記の表で明らかなように実施例1〜7のスパッタリン
グ用ターゲットは、ターゲット材料1及びバッキングプ
レート2のコーティング層にボンディング材3の拡散が
無く、濡れが良好であるので、ターゲット材料1とバッ
キングプレート2との接合が良好に行われ、接合面積も
十分大きいものであった。然るに従来例1のスパッタリ
ング用ターゲットはコーティング層に対するボンディン
グ材3の濡れは良いが、拡散があって、コーティング層
がくわれてしまい、ターゲット材料への汚染があり、従
来例2のスパッタリング用ターゲットはコーティング層
に対応するボンディング3の拡散は無いが、濡れが悪
く、接合不可能であった。
As is clear from the above table, the sputtering targets of Examples 1 to 7 have good diffusion and no wetting of the bonding material 3 in the coating layers of the target material 1 and the backing plate 2 and therefore have good wetness. The bonding with the plate 2 was performed well, and the bonding area was sufficiently large. Therefore, in the sputtering target of Conventional Example 1, the wetting of the bonding material 3 with respect to the coating layer is good, but since the coating layer is broken due to diffusion, the target material is contaminated, and the sputtering target of Conventional Example 2 is coated. Although there was no diffusion of the bonding 3 corresponding to the layer, the wetting was poor and the bonding was impossible.

(発明の効果) 以上の説明で判るように本発明によるスパッタリング用
ターゲットの製造方法によれば、ターゲット材やバッキ
ングプレートの接合面にコーティングした合金層はボン
ディング材による拡散が無くボンディング材との濡れが
良好であるので、ターゲット材料はボンディング材によ
り汚染されることなく、バッキングプレートと良好に接
合されて、面積の十分大きいスパッタリング用ターゲッ
トが得られるという効果がある。
(Effects of the Invention) As can be seen from the above description, according to the method for manufacturing a sputtering target according to the present invention, the target material and the alloy layer coated on the bonding surface of the backing plate are not diffused by the bonding material and wet with the bonding material. Is favorable, the target material is not contaminated by the bonding material, is well bonded to the backing plate, and the sputtering target having a sufficiently large area can be obtained.

【図面の簡単な説明】 第1図a、b、cは本発明のスパッタリング用ターゲッ
トの製造方法の工程を示す図、第2図は従来の一般的な
スパッタリング用ターゲットの製造方法を示す図であ
る。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A, FIG. 1B, and FIG. 1C are diagrams showing steps of a method for producing a sputtering target of the present invention, and FIG. 2 is a diagram showing a conventional method for producing a general sputtering target. is there.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ターゲット材料の接合面及びバッキングプ
レートの接合面に、Cuを基合金としてこれにCr、C
o、Ni、Feの少なくとも一種を添加して成る合金
を、夫々コーティングし、然る後ターゲット材料とバッ
キングプレートのコーティングした接合面をボンディン
グ材にて接合するスパッタリング用ターゲットの製造方
法。
1. A base alloy of Cu is used as a base alloy on the bonding surface of a target material and the bonding surface of a backing plate, and Cr and C are added thereto.
A method for producing a sputtering target, which comprises coating an alloy formed by adding at least one of O, Ni, and Fe, and then joining the target material and the coated joint surface of the backing plate with a bonding material.
JP17494486A 1986-07-25 1986-07-25 Method for producing target for sputtering Expired - Lifetime JPH069735B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17494486A JPH069735B2 (en) 1986-07-25 1986-07-25 Method for producing target for sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17494486A JPH069735B2 (en) 1986-07-25 1986-07-25 Method for producing target for sputtering

Publications (2)

Publication Number Publication Date
JPS6333174A JPS6333174A (en) 1988-02-12
JPH069735B2 true JPH069735B2 (en) 1994-02-09

Family

ID=15987460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17494486A Expired - Lifetime JPH069735B2 (en) 1986-07-25 1986-07-25 Method for producing target for sputtering

Country Status (1)

Country Link
JP (1) JPH069735B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6858102B1 (en) 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
US6774339B1 (en) * 1999-11-09 2004-08-10 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
WO2001039250A2 (en) 1999-11-24 2001-05-31 Honeywell International Inc. Conductive interconnection
JPWO2012066764A1 (en) * 2010-11-17 2014-05-12 株式会社アルバック Backing plate, target assembly and sputtering target

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677805B2 (en) * 1986-07-10 1994-10-05 株式会社神戸製鋼所 Bonding method for targets for sputtering

Also Published As

Publication number Publication date
JPS6333174A (en) 1988-02-12

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