CN103210116A - Backing plate, target assembly, and sputtering target - Google Patents

Backing plate, target assembly, and sputtering target Download PDF

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Publication number
CN103210116A
CN103210116A CN2011800536422A CN201180053642A CN103210116A CN 103210116 A CN103210116 A CN 103210116A CN 2011800536422 A CN2011800536422 A CN 2011800536422A CN 201180053642 A CN201180053642 A CN 201180053642A CN 103210116 A CN103210116 A CN 103210116A
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CN
China
Prior art keywords
metallic substance
backing plate
target
alloy
main body
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Pending
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CN2011800536422A
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Chinese (zh)
Inventor
田屋和美
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Ulvac Inc
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Ulvac Inc
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Publication of CN103210116A publication Critical patent/CN103210116A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Abstract

To provide a backing plate having excellent adhesion to a joining material. [Solution] The backing plate (1) includes a backing plate body (11) and a metallization layer (12). The backing plate body (11) is made of a first metal material and has a joining surface (11a) to which a joining material made of indium, tin, or an alloy thereof is applied. The metallization layer (12) is formed on the joining surface (11a) and is made of an alloy phase of said first metal material and a second metal material having higher wettability to the joining material compared to the first metal material. In this way, the metallization layer (12) is integrated with the joining surface (11a) of the backing plate body (11), and thus, the peeling of the metallization layer (12) from the joining surface (11a) is prevented. Also, because the alloy phase contains a metal material having high wettability to the joining material, the adhesion to the joining material can be improved.

Description

Backing plate, target assembly and sputtering target
Technical field
The present invention relates to a kind of backing plate, target assembly and the sputtering target higher with adhesivity grafting material (braze material).
Background technology
As film forming technology on substrate, known have a sputtering method.Therefore sputtering target uses under the state on the backing plate that joins cooling usefulness to owing to heat up under the sputter effect of the ion in plasma body.Target is being engaged on the backing plate, is extensively adopting soldering.
Temperature rising when sputtering target requires to bear film forming or thermal stresses, release gas are less etc.Particularly, the heat-resistant quality of target adhesivity that target and backing plate are had relatively high expectations.Therefore, require abundant wettability with braze material for target and backing plate, in the past, as the surface treatment on each junction surface of target and backing plate, utilize the metalized (for example with reference to patent documentation 1) of plating, evaporation, solder flux.
Patent documentation 1: TOHKEMY 2006-25710 communique
Yet, utilize the metalized of plating, evaporation, solder flux owing to be to use metal layer to apply the processing on mother metal surface, therefore with the adhesivity of mother metal a little less than, have the problem of peeling off.In addition, the metalized of utilizing plating or solder flux to apply needs cost in liquid waste disposal, and carrying capacity of environment is bigger simultaneously.And there is the problem that discharges gas in solder flux, is difficult to form high-quality film.
Summary of the invention
In view of the foregoing, the object of the present invention is to provide a kind of backing plate, target assembly and sputtering target of adhesivity excellence of and grafting material.
To achieve these goals, an embodiment of the invention provide a kind of backing plate, comprising: backing plate main body and adhesion layer.
Above-mentioned backing plate main body has and the sputtering target opposite first, is formed by first metallic substance.
Above-mentioned adhesion layer has the second surface that is coated with the grafting material that is formed by indium, tin or their alloy, includes second metallic substance higher than above-mentioned first metallic substance to the wettability of above-mentioned grafting material, is formed on the above-mentioned first surface.
In addition, an embodiment of the invention provide a kind of target assembly, comprising: sputtering target, backing plate main body, knitting layer and adhesion layer.
Above-mentioned backing plate main body has and above-mentioned target opposite first, is formed by first metallic substance.
Above-mentioned knitting layer is arranged between above-mentioned target and the above-mentioned first surface, is formed by grafting material.
Above-mentioned adhesion layer has the second surface that is coated with above-mentioned grafting material, includes second metallic substance higher than above-mentioned first metallic substance to the wettability of above-mentioned grafting material, is formed on the above-mentioned first surface.
In addition, an embodiment of the invention provide a kind of sputtering target, comprising: target main body and metal layer.
Above-mentioned target main body has the junction surface that is coated with the grafting material that is formed by indium, tin or their alloy, is formed by first metallic substance.
Above-mentioned metal layer is formed on the above-mentioned junction surface, is made of above-mentioned first metallic substance and alloy phase to the wettability of above-mentioned grafting material second metallic substance higher than above-mentioned first metallic substance.
Description of drawings
Fig. 1 is the sectional view that has schematically shown the target assembly structure that an embodiment of the invention relate to;
Fig. 2 is the sectional view that has schematically shown the backing plate structure of an embodiment of the invention;
Fig. 3 is the sectional view that has schematically shown the variation of the backing plate structure that an embodiment of the invention relate to;
Fig. 4 is the synoptic diagram that the manufacture method of backing plate that an embodiment of the invention are related to describes;
Fig. 5 is the sectional view that has schematically shown the target structure that an embodiment of the invention relate to;
Fig. 6 is the sectional view that has schematically shown the target assembly structure that another embodiment of the present invention relates to;
Fig. 7 is the view sub-anatomy that has schematically shown the backing plate structure that another embodiment of the present invention relates to;
Fig. 8 is the sectional view that has schematically shown the variation of the backing plate that another embodiment of the present invention relates to;
Fig. 9 is the synoptic diagram that the manufacture method of backing plate that another embodiment of the present invention is related to describes;
Figure 10 is the figure of the variation of the backing plate that relates to of expression another embodiment of the present invention, (A) is vertical view, (B) is side-view;
Figure 11 is the figure of another variation of the backing plate that relates to of expression another embodiment of the present invention, (A) is vertical view, (B) is side-view.
Embodiment
The backing plate that an embodiment of the invention relate to comprises: backing plate main body and adhesion layer.
Above-mentioned backing plate main body has and the sputtering target opposite first, is formed by first metallic substance.
Above-mentioned adhesion layer has the second surface that is coated with the grafting material that is formed by indium, tin or their alloy, includes second metallic substance higher than above-mentioned first metallic substance to the wettability of above-mentioned grafting material, is formed on the above-mentioned first surface.
In above-mentioned backing plate, adhesion layer is by forming the wettability of the grafting material material higher than the constituent material of backing plate main body, therefore and grafting material between can obtain higher adhesivity.
The metal layer that above-mentioned adhesion layer also can be made of the alloy phase of above-mentioned first metallic substance and above-mentioned second metallic substance forms.
Thus, can make the first surface of metal layer and backing plate main body integrated, and can prevent that metal layer from peeling off from this first surface.In addition, therefore above-mentioned alloy phase can improve the adhesivity with knitting layer owing to include the metallic substance higher to the wettability of grafting material.
First metallic substance and second metallic substance that form the metal layer of backing plate all are not particularly limited, and can select arbitrarily.For example, as first metallic substance, can enumerate: copper, aluminium, titanium, molybdenum or their alloy or stainless steel etc., as second metallic substance, can enumerate: copper, nickel, aluminium, tin, indium, gold and silver or their alloy.Wherein, for example can use first metallic substance to be molybdenum or its alloy, second metallic substance is the combination of nickel or its alloy.
The formation method of above-mentioned metal layer also is not particularly limited, and for example can form metal layer by discharge process.Thus, can easily form metal layer.
Above-mentioned adhesion layer is formed by the metal sheet that above-mentioned second metallic substance formed and be engaged in above-mentioned first surface.
Above-mentioned metal sheet is by being engaged in the first surface of backing plate main body, thereby constitutes the metal layer of backing plate main body.Above-mentioned metal sheet is by forming the wettability of the grafting material material higher than the constituent material of backing plate main body, therefore and grafting material between can obtain higher adhesivity.In addition, metal sheet is engaged on the backing plate main body integratedly, therefore can obtain higher stripping strength for the backing plate main body.
The method of joining of metal sheet and backing plate main body is not particularly limited, for example, and applicable explosive welding, diffusion bond or soldering etc.Thus, the problem that can avoid liquid waste disposal or release gas to produce.
Form first metallic substance of backing plate main body and second metallic substance of formation metal sheet and all be not particularly limited, can select arbitrarily.For example, as first metallic substance, use Ti (titanium), Ti alloy or stainless steel, as second metallic substance, use Cu (copper), Ni (nickel), Al (aluminium) or their alloy.
With Ti, Ti alloy or stainless steel be the backing plate of base material because Young's modulus is big, intensity is high, therefore the expansion that causes owing to hydraulic pressure is less.Therefore, use this backing plate for the such high fragility target of for example sintering target.Because Ti and Ti alloy thermal expansivity are less, be that the backing plate of base material for example is used for ITO (indium tin oxide), GZO low-thermal-expansion targets such as (zinc oxide of doped gallium) with these materials therefore.Because Ti, Ti alloy and stainless steel etc. are lower with the wettability of In (indium) or Sn (tin) grafting material of etc.ing, so by will being formed on the junction surface by the metal sheet that Gu, Ni, Al etc. form, thereby can guarantee good adhesion with above-mentioned grafting material.
Above-mentioned metal sheet also can be divided into a plurality of cutting plates and be engaged on the above-mentioned first surface.Thus, can suppress because warpage or the distortion of the backing plate that the difference of the thermal expansivity between backing plate main body and the metal sheet causes.
The target assembly that another embodiment of the present invention relates to possesses: sputtering target, backing plate main body, knitting layer and adhesion layer.
Above-mentioned backing plate main body has and above-mentioned target opposite first, is formed by first metallic substance.
Above-mentioned knitting layer is arranged between above-mentioned target and the above-mentioned first surface, is formed by grafting material.
Above-mentioned adhesion layer has the second surface that is coated with above-mentioned grafting material, includes second metallic substance higher than above-mentioned first metallic substance to the wettability of above-mentioned grafting material, is formed on the above-mentioned first surface.
In above-mentioned target assembly, adhesion layer is by the wettability of the grafting material material higher than the constituent material of backing plate main body formed.Therefore, and grafting material between can obtain higher adhesivity.
The sputtering target that an embodiment of the invention relate to comprises: target main body and metal layer.
Above-mentioned target main body has the junction surface that is coated with the grafting material that is formed by indium, tin or their alloy, is formed by first metallic substance.
Above-mentioned metal layer is formed on the above-mentioned junction surface, is made of above-mentioned first metallic substance and alloy phase to the wettability of above-mentioned grafting material second metallic substance higher than above-mentioned first metallic substance.
Above-mentioned metal layer is made of the alloy phase of above-mentioned first metallic substance and above-mentioned second metallic substance.Thus, can make the junction surface of metal layer and target main body integrated, and can prevent that metal layer from peeling off from the junction surface.In addition, above-mentioned alloy phase includes the metallic substance higher to the wettability of grafting material, therefore can improve and grafting material between adhesivity.
First metallic substance and second metallic substance that form the metal layer of target all are not particularly limited, and can select arbitrarily.For example, as first metallic substance, can enumerate: copper, aluminium, titanium, molybdenum or their alloy or stainless steel etc., as second metallic substance, can enumerate: copper, nickel, aluminium, tin, indium, gold and silver or their alloy.Wherein, for example can use first metallic substance to be molybdenum or its alloy, second metallic substance is the combination of nickel or its alloy.
Below, with reference to accompanying drawing, embodiments of the present invention are described.
＜the first embodiment 〉
[target assembly]
Fig. 1 is the sectional view that has schematically shown the target assembly that an embodiment of the invention relate to.The target assembly 10 of present embodiment has: backing plate 1, target 2 and knitting layer 3.
Knitting layer 3 is the grafting materials that engage backing plate 1 and target 2, and for example the braze material that is made of In, Sn or their alloy forms.
Target assembly 10 is arranged on the not shown sputter equipment.Backing plate 1 is connected in direct current, interchange or RF power supply.The surface of the substrate in target 2 and the vacuum chamber is with relative configuration the in interval of regulation.Target assembly 10 for example has the cooling structure that utilizes water coolant, and by backing plate 1 is carried out water-cooled, thereby target 2 excessively heats up when preventing sputter, because the fusion of knitting layer 3 causes that target 2 is peeled off etc.Target assembly 10 by with not shown magnet unit, thereby constitute magnet controlled sputter cathode.
[backing plate]
Fig. 2 is the sectional view of backing plate 1.Backing plate 1 has: metal backing plate main body 11 and metal layer 12 (first metal layer).
Backing plate main body 11 has junction surface 11a.Junction surface 11a is engaged in target 2 via knitting layer 3.The metallic substance (first metallic substance) that forms backing plate main body 11 can use various metallic substance, for example, can enumerate: Cu, Al, Ti, Mo or their alloy or stainless steel etc.
Backing plate main body 11 has the circulation path of water coolant in inside, though not shown.Backing plate main body 11 is not limited to the structure that inside has above-mentioned circulation path, also can be the cooling surface of face for contacting with water coolant of the opposition side of junction surface 11a.In addition, backing plate main body 11 is not limited to form simple tabular example, for example also can be such section shape that is called as so-called shape for hat shown in Figure 3.
Metal layer 12 is formed on the 11a of junction surface.Metal layer 12 is formed by the mother metal that constitutes backing plate main body 11 (first metallic substance) and alloy phase to the wettability of the grafting material (In, Sn etc.) that the constitutes knitting layer 3 metallization metal (second metallic substance) higher than this metallic substance.Metal layer 12 plays adhesion layer, and this adhesion layer improves the adhesivity between backing plate main body 11 and the knitting layer 3.
As the metallic substance higher to the wettability of grafting materials such as In, Sn, can enumerate: Cu, Ni, Al, Sn, In, Au, Ag or their alloy, can be suitably selected according to the metallic substance kind that constitutes backing plate 11.In the present embodiment, backing plate main body 11 is made of Mo, and the metallization metal uses Ni.
Fig. 4 is the synoptic diagram that the formation method to metal layer 12 describes.Metal layer 12 is formed by discharge process.As shown in Figure 4, the electrode bar 15 of discharge usefulness disposes so that specified gap is relative with junction surface 11a.Electrode bar 15 is formed by metallization metal (being Ni in this example).When junction surface 11a is carried out metalized, by between electrode bar 15 and backing plate main body 11, applying assigned voltage, produce discharge thereby make between the top of electrode bar 15 and the junction surface 11a.Thus, form the Ni particle alloying that the mother metal (Mo) of junction surface 11a is dispersed from electrode bar 15.Electrode bar 15 is mobile at junction surface 11a, thus, forms metal layer 12 on the whole surface of junction surface 11a.
The metalized condition of junction surface 11a is not particularly limited, and for example as power supply, can use the pulse power of voltage 150V, condenser capactiance 40 μ F, or the pulse power of voltage 100V, condenser capactiance 10 μ F.The thickness of metal layer 12 is not particularly limited, so long as the metallized thickness in the top layer of junction surface 11a is got final product.
Metal layer 12 forms with the junction surface 11a of backing plate main body 11, prevents that therefore metal layer 12 from peeling off from junction surface 11a.In addition, the alloy phase that constitutes metal layer 12 comprises the metallic substance higher to the wettability of grafting material (metallization metal), therefore can improve and grafting material between adhesivity.
[sputtering target]
Fig. 5 is the sectional view of target 2.Target 2 has metal target main body 21 and metal layer 22 (second metal layer).
Target main body 21 has junction surface 21a.Junction surface 21a is engaged in backing plate 1 via knitting layer 3.The metallic substance (first metallic substance) that forms target main body 21 can use various metallic substance, for example, can enumerate: Cu, Al, Ti, Mo or their alloy or stainless steel etc.
Target main body 21 also can be the cast body of feed metal, also can be the sintered compact of raw material powder.Target main body 21 can be adjusted into size, thickness, shape, the tissue that is fit to the sputter purposes respectively.
Metal layer 22 is formed on the 21a of junction surface.Metal layer 22 is formed by the mother metal that constitutes target main body 21 (first metallic substance) and alloy phase to the wettability of the grafting material (In, Sn etc.) that the constitutes knitting layer 3 metallization metal (second metallic substance) higher than this metallic substance.Metal layer 22 plays adhesion layer, and this adhesion layer improves the adhesivity between backing plate main body 11 and the knitting layer 3.
As the metallization metal, can enumerate: Cu, Ni, Al, Sn, In, Au, Ag or their alloy, can be suitably selected according to the kind of the metallic substance that constitutes target main body 21.In the present embodiment, target main body 21 is made of Mo, and the metallization metal uses Ni.Metal layer 22 forms by being formed on the identical discharge process of method on the junction surface 11a of above-mentioned backing plate main body 11 with metal layer 12.
Metal layer 22 forms with the junction surface 21a of target main body 21, prevents that therefore metal layer 22 from peeling off from junction surface 21a.In addition, the alloy phase that constitutes metal layer 22 comprises the metallic substance higher to the wettability of grafting material (metallization metal), therefore can improve and grafting material between adhesivity.
As above the backing plate 1 of Gou Chenging and target 2 make under each junction surface 11a, the 21a state respect to one another, fit via the grafting material of molten state.At this moment, be formed with metal layer 12,22 at each junction surface 11a, 21a, therefore guarantee the good wettability with grafting material in the whole zone on junction surface.Therefore, can both obtain good adhesivity by the knitting layer 3 that solidifies grafting material formation for backing plate 1 and target 2 both sides.
In addition, according to present embodiment, because metal layer 12,22 is therefore different with plating or solder flux processing by discharge process formation, do not need liquid waste disposal, so carrying capacity of environment is less.In addition, there is not the problem that discharges gas in the metallization that utilizes discharge process to carry out yet, thus, can form high-quality sputtered film.
＜the second embodiment 〉
[target assembly]
Fig. 6 is the sectional view that has schematically shown the target assembly of another embodiment of the present invention.The target assembly 30 of present embodiment has: backing plate 31, target 32 and knitting layer 33.
Knitting layer 33 is the grafting materials that engage backing plate 31 and target 32, and for example the braze material that is made of In, Sn or their alloy forms.
Target assembly 30 is arranged on the not shown sputter equipment.Backing plate 31 is connected in direct current, interchange or RF power supply, and the substrate surface in target 32 and the vacuum chamber is with relative configuration the in interval of regulation.Target assembly 30 for example has the cooling structure that utilizes water coolant, by backing plate 31 is carried out water-cooled, when preventing sputter target 32 excessively heat up, since the fusion of knitting layer 33 cause that target is peeled off etc.Target assembly 30 is by combined with not shown magnet unit, thereby constitutes magnet controlled sputter cathode.
[backing plate]
Fig. 7 is the view sub-anatomy of backing plate 31.Backing plate 31 has the stepped construction of metal backing plate main body 311 and metal sheet 312.
Backing plate main body 311 has junction surface 311a (first surface).Junction surface 311a is engaged in target 32 via knitting layer 33.The metallic substance (first metallic substance) that forms backing plate main body 311 can use various metallic substance, for example, can enumerate: Cu, Al, Ti, Mo or their alloy or stainless steel etc.In the present embodiment, backing plate main body 11 is formed by Ti, Ti alloy or stainless steel.
Ti, Ti alloy and stainless Young's modulus are big, the intensity height.Therefore be that the backing plate of base material is because the expansion that hydraulic pressure causes is less with Ti, Ti alloy or stainless steel.Therefore, for example use this backing plate for the such high fragility target of sintering target.In addition, because the thermal expansivity of Ti and Ti alloy is less, therefore for example be used for ITO (indium tin oxide), the GZO less targets of thermal expansion such as (zinc oxide of doped gallium) with these materials as the backing plate of base material.
Backing plate main body 311 has the circulation path of water coolant in inside.Backing plate main body 311 is not limited to the structure that inside has above-mentioned circulation path, also can be the cooling surface of face for contacting with water coolant of the opposition side of junction surface 311a.In addition, backing plate main body 311 is not limited to form simple tabular example, for example also can be the section shape that is called as so-called shape for hat as shown in Figure 8.
Metal sheet 312 has junction surface 312a (second surface).Junction surface 312a forms the opposite face of the one side relative with backing plate main body 311.Be coated with the grafting material that constitutes knitting layer 33 on the 312a of junction surface.
Thereby metal sheet 312 is by being engaged in the metal layer of junction surface 311a formation backing plate main body 311.Metal sheet 312 is by the metal base that constitutes backing plate main body 311 (first metallic substance) and metallization metal (second metallic substance) formation high than this metallic substance to the wettability of the grafting material (In, Sn etc.) that constitutes knitting layer 33.Metal sheet 312 plays adhesion layer, and this adhesion layer improves the adhesivity between backing plate main body 311 and the knitting layer 33.The thickness of metal sheet 312 is not particularly limited, and for example is below the above 1.0mm of 0.1mm.
As the metallic substance higher to the wettability of grafting materials such as In, Sn, can enumerate: Cu, Ni, Al, Sn, In, Au, Ag or their alloy, can be suitably selected according to the metallic substance kind that constitutes backing plate main body 11.In the present embodiment, form metal sheet 312 by Cu, Ni, Al or their alloy.
In the present embodiment, the constituent material of backing plate main body 311 uses Ti, Ti alloy or stainless steel.Therefore wettability between Ti, Ti alloy, stainless steel etc. and the grafting materials such as In or Sn is lower, by will being formed on the 311a of junction surface by the metal sheet 312 that Cu, Ni, Al etc. form, thereby can guarantee good adhesion with grafting material.
The method of joining of metal sheet and backing plate main body is not particularly limited, and adopts the explosive welding connection in the present embodiment.
The explosive welding connection is the method that a kind of high-energy of the utmost point in the short period of time that produces during with gunpowder explosion is used for intermetallic joint, is also referred to as blast welding or explosion crimping.Fig. 9 is the synoptic diagram that the method for joining that utilizes backing plate main body 311 that explosive welding obtains and metal sheet 312 is described.Shown in Fig. 9 (A), the relative configuration of junction surface 311a of metal sheet 312 and backing plate main body 311.Go up in the rear side (upper surface side among the figure) of metal sheet 312 and to be provided with gunpowder layer 342 via cushioning material 341, at the end (left end among the figure) of gunpowder layer 342 detonator 343 is installed.And, shown in Fig. 9 (B), make gunpowder layer 342 right-hand blast successively in the figure by detonating primer 343.312 one-tenth predetermined angulars of metal sheet and junction surface 311a collision, the metal jet that utilization produces from impact point is removed the oxide film of metallic surface etc.Like this, successively metal sheet 312 is bonded with each other with clean Surface with junction surface 311a from impact point.
Engaging in the operation of backing plate main body 311 and metal sheet 312, except above-mentioned, can also adopt other solid phase bonding methods such as the method for being frictionally engaged or diffusion bond method, also can adopt the soldering welding process that uses braze material.
[target]
Target 32 also can be the cast body of feed metal, also can be the sintered compact of raw material powder.In the present embodiment, the sintered compact that is made of transparent conductive oxides such as ITO, GZO of target 32 forms.Target 32 is adjusted into size, thickness, shape, the tissue that is fit to the sputter purposes respectively.
As above the backing plate 31 of Gou Chenging and target 32 make under the state relative to each other of each junction surface, fit via the grafting material of molten state.At this moment, the good wettability with grafting material is guaranteed by the wettability of the grafting material metal sheet 312 higher than the constituent material of backing plate main body 311 covered in the junction surface of backing plate 31 sides therefore in the whole zone of junction surface 312a.Knitting layer 33 forms by making the grafting material sclerosis.
Like this, according to present embodiment, can obtain the good adhesivity between backing plate 31 and the knitting layer 33.In addition, metal sheet 312 is bonded on the backing plate main body 311 integratedly, therefore can obtain higher stripping strength for backing plate main body 311.
In addition, according to present embodiment, engage integratedly with backing plate main body 311 owing to form the metal sheet 312 of metal layer, therefore different with plating or solder flux processing, do not need liquid waste disposal, and carrying capacity of environment is also less.In addition, there is not the problem that discharges gas yet, therefore can forms high-quality sputtered film.
In addition, according to present embodiment, owing to backing plate main body 311 is formed by the less Ti of thermal expansivity, therefore owing to heat the warpage that causes or be out of shape less.Therefore, even target 32 such high hard brittle material that is the ITO sintered compact also can stably keep target 32 can not produce cracking or fracture.
Tentative calculation according to the inventor, engage the ITO target of wide 200mm, long 2700mm, thick 8mm and in the target assembly that obtains at the tabular backing plate of wide 200mm, long 3000mm, thick 16mm, amount of warpage at the target of Cu backing plate processed is under the situation of 4.3mm, and the amount of warpage of the target of Ti backing plate processed can reduce to 1.0mm.
More than, be illustrated at embodiments of the present invention, but the present invention is not limited thereto, also can implement various distortion based on technological thought of the present invention.
For example in above embodiment, backing plate and target are formed by metallic substance of the same race respectively, but are not limited thereto, and also can be formed by the different kinds of metals material respectively.
In addition, constituting the alloy that metal layer 12,22 alloy phase are not limited in mother metal and metallization metal, also can be its mixed phase, compound phase, also can be the metallization metal single phase.
In addition, metal sheet 312 is engaged in the whole zone of junction surface 311a of backing plate main body 311, but is not limited thereto, and as shown in figure 10, metal sheet 312 also can be engaged in a part of zone of junction surface 311a.
In addition, as shown in figure 11, metal sheet 312 also can be divided into a plurality of cutting plates 121 and be engaged in junction surface 311a.Thus, can suppress because backing plate warpage or the distortion that the difference of the thermal expansivity of backing plate main body 311 and metal sheet 312 causes.The shape of each cutting plate 121 and size also can be identical, also can be different.The configuration space of cutting plate 121 is not particularly limited, and for example is below the 1mm.Thus, can prevent because warpage or the distortion of the backing plate 31 that causes of thermal expansion rate variance, guarantee simultaneously and knitting layer 33 between high-adhesiveness.
Nomenclature
1,31... backing plate
2,32... target
3,33... knitting layer
10,30... target assembly
11,311... backing plate main body
11a, 21a, 311a... junction surface
12,22... metal layer
21... target main body
312... metal sheet

Claims (18)

1. backing plate comprises:
The backing plate main body has and the sputtering target opposite first, is formed by first metallic substance; And
Adhesion layer has the second surface that is coated with the grafting material that is formed by indium, tin or their alloy, includes second metallic substance higher than described first metallic substance to the wettability of described grafting material, is formed on the described first surface.
2. backing plate according to claim 1, wherein, described adhesion layer is formed by the metal layer that the alloy phase of described first metallic substance and described second metallic substance constitutes.
3. backing plate according to claim 2, wherein, described metal layer forms by discharge process.
4. according to claim 2 or 3 described backing plates, wherein, described first metallic substance is molybdenum or molybdenum alloy, and described second metallic substance is nickel or nickelalloy.
5. backing plate according to claim 1, wherein, described adhesion layer is formed by the metal sheet that described second metallic substance formed and be engaged in described first surface.
6. backing plate according to claim 5, wherein, described metal sheet is engaged in described first surface by explosive welding, diffusion bond or soldering.
7. according to claim 5 or 6 described backing plates, wherein, described first metallic substance is titanium, titanium alloy or stainless steel, and described second metallic substance is copper, nickel, aluminium or their alloy.
8. according to each described backing plate in the claim 5～7, wherein, described metal sheet is divided into a plurality of cutting plates and is engaged in described first surface.
9. target assembly comprises:
Sputtering target;
The backing plate main body has and described target opposite first, is formed by first metallic substance;
Knitting layer is arranged between described target and the described first surface, is formed by grafting material; And
Adhesion layer has the second surface that is coated with described grafting material, includes second metallic substance higher than described first metallic substance to the wettability of described grafting material, is formed on the described first surface.
10. target assembly according to claim 9, wherein, described adhesion layer is formed by the metal layer that the alloy phase of described first metallic substance and described second metallic substance constitutes.
11. according to claim 9 or 10 described target assemblies, wherein, described grafting material is formed by indium, tin or their alloy.
12. according to each described target assembly in the claim 9～11, wherein, described first metallic substance is molybdenum or molybdenum alloy, described second metallic substance is nickel or nickelalloy.
13. target assembly according to claim 9, wherein, described adhesion layer is formed by the metal sheet that described second metallic substance formed and be engaged in described first surface.
14. target assembly according to claim 13, wherein, described grafting material is formed by indium, tin or their alloy.
15. according to claim 9,13 or 14 described target assemblies, wherein, described first metallic substance is titanium, titanium alloy or stainless steel, described second metallic substance is copper, nickel, aluminium or their alloy.
16. a sputtering target comprises:
The target main body has the junction surface that is coated with the grafting material that is formed by indium, tin or their alloy, is formed by first metallic substance; And
Metal layer is formed on the described junction surface, is made of described first metallic substance and alloy phase to the wettability of described grafting material second metallic substance higher than described first metallic substance.
17. sputtering target according to claim 16, wherein, described metal layer forms by discharge process.
18. sputtering target according to claim 16, wherein, described first metallic substance is molybdenum or molybdenum alloy, and described second metallic substance is nickel or nickelalloy.
CN2011800536422A 2010-11-17 2011-11-14 Backing plate, target assembly, and sputtering target Pending CN103210116A (en)

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CN106536787A (en) * 2014-07-31 2017-03-22 捷客斯金属株式会社 Backing plate with diffusion bonding of anticorrosive metal and Mo or Mo alloy and sputtering target-backing plate assembly provided with said backing plate
CN107771224A (en) * 2015-03-18 2018-03-06 尤米科尔公司 The method for forming rotary sputtering target
CN111411329A (en) * 2019-01-08 2020-07-14 天津中能锂业有限公司 Method and apparatus for manufacturing planar lithium target assembly

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KR20130099109A (en) 2013-09-05

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