JP6689309B2 - Sputtering target member, sputtering target assembly, and method for manufacturing sputtering target member - Google Patents

Description

  The present invention relates to a sputtering target member, a sputtering target assembly, and a method for manufacturing a sputtering target member.

  Usually, a sputtering target (hereinafter, also simply referred to as “target”) is bonded by a brazing material to a backing plate (including a tubular shape) made of a material having good thermal conductivity such as copper, This backing plate is cooled by means such as water cooling to indirectly cool the sputtering target. Further, since the backing plate is reused in many cases, the sputtering target and the backing plate are joined with a low melting point brazing material or the like so that the sputtering target can be replaced.

  When applying the brazing material, the work piece such as the sputtering target or backing plate is heated, the molten brazing material (indium, etc.) is placed on it, and the tool horn of the ultrasonic welder is contacted from above to melt it. Apply as indium. After that, the sputtering target and the backing plate were attached to each other in a state where the indium was applied, and then cooled to bond the sputtering target and the backing plate.

Brazing material application using such an ultrasonic welder causes distortion and fine cracks in the workpiece due to contact with the tool horn and ultrasonic vibration generated from the tool horn. There is concern that problems such as deformation, cracking, and peeling of the target may be caused by the origin of strain and minute cracks when receiving mechanical / thermal stress. For example, cracks may occur from the brazing material application surface of the workpiece due to thermal stress during sputtering.
From the above, it is difficult to apply the low melting point brazing material uniformly and maintaining the strength of the workpiece by the brazing material application method using the ultrasonic welder.

  It should be noted that Patent Documents 1 and 2 disclose a method of uniformly applying a low melting point brazing material to a large-area workpiece such as a sputtering target. However, these are coating methods using ultrasonic waves. Further, Patent Document 3 discloses that after forming an underlayer on the outer peripheral surface of a cylindrical supporting base material, the bonding material is solidified to bond the cylindrical ceramic target.

JP 2001-340959A JP, 2004-322109, A JP, 2012-132065, A

  The present invention has been made in view of such circumstances, and a sputtering target member capable of being bonded to a backing member while suppressing a decrease in mechanical strength of the target material, and such a sputtering target. An object of the present invention is to provide a sputtering target assembly including a member and a method for manufacturing a sputtering target member.

As a result of diligent studies by the present inventors, it has been found that the above problem can be solved by providing a specific underlayer and a bonding layer on the surface of the target material. That is, the present invention is specified as follows.
(1) Sputtering in which a target material made of an oxide ceramics sintered body, a base layer made of an In—Ni alloy, and a bonding layer containing 50% by mass or more of indium are sequentially provided on at least one surface of the target material. Target member.
(2) The sputtering target member according to (1), wherein the underlayer made of the In—Ni alloy has a thickness of 0.2 to 10 μm.
(3) The sputtering target member according to (1) or (2), which has a surface roughness Rz of 15 μm or less.
(4) The sputtering target member according to any one of (1) to (3), which has a surface roughness Rz of 0.8 or more and 7 μm or less.
(5) The sputtering target member according to any one of (1) to (4), wherein the underlayer made of the In-Ni alloy contains 10 to 80% by mass of Ni.
(6) The target material contains at least one selected from In, Zn, Al, Ga, Zr, Ti, Sn, Mg, Ta and Si. (1) to (5) The sputtering target member according to.
(7) The sputtering target member according to any one of (1) to (6), wherein the content of Sn is 1 to 10% by mass of ITO in terms of SnO ₂ .
(8) 10 to 60 wt% content of In in the In ₂ O ₃ in terms of 10 to 60 mass% content of Ga is in terms _of Ga ₂ O _3, 10 to 60 mass% content of Zn is in terms of ZnO The sputtering target member according to any one of (1) to (6), which is IGZO.
(9) The sputtering target member according to any one of (1) to (6), wherein the Al content is 0.1 to 5 mass% AZO in terms of Al ₂ O ₃ .
(10) The sputtering target member according to any one of (1) to (6), wherein the content of Zn is 1 to 15 mass% of IZO in terms of ZnO.
(11) A sputtering target assembly in which the sputtering target member according to any one of (1) to (10) and a backing member are bonded together via the underlayer and the bonding layer.
(12) The method for manufacturing a sputtering target member according to any one of (1) to (10), wherein nickel and indium are sequentially formed on the surface of the target material made of an oxide ceramics sintered body by an ion plating method. After the deposition, the nickel and indium are alloyed by heating at 200 to 250 ° C. on a hot plate to form a base layer made of an In—Ni alloy, and a brazing material containing 50% by mass or more of indium is applied. The manufacturing method of the sputtering target member characterized by including the process of performing.
(13) The method for producing a sputtering target member according to (12), wherein the surface roughness Rz of the target material is 0.8 μm or more and 15 μm or less.
(14) The method for producing a sputtering target member according to (12) or (13), wherein the surface roughness Rz of the sputtering target member is 0.8 μm or more and 15 μm or less.

  According to the present invention, it is possible to bond a target material with a backing member while suppressing a decrease in mechanical strength.

FIG. 3 is a mapping diagram showing the relationship between the heating temperature of a hot plate and the formation of an underlayer made of an In—Ni alloy. It is another figure which shows the relationship between the heating temperature of a hot plate, and formation of the base layer which consists of In-Ni alloys. It is a figure which shows the bending strength of the sputtering target member of an Example of this invention and a prior art. It is a figure which shows the analysis image after the FIB of the structure | tissue of the sputtering target member of an Example of this invention and a prior art.

<Target material>
In one embodiment of the present invention, the target material may be made of an oxide ceramics sintered body, and its composition is not particularly limited.
Examples of the ceramics forming the target material include oxides containing at least one of In, Zn, Al, Ga, Zr, Ti, Sn, Mg, Ta and Si. Specifically, the content of Sn is 1 to 10 mass% of ITO (In ₂ O ₃ —SnO ₂ ) in terms of SnO ₂ , the content of In is 10 to 60 mass% in terms of In ₂ O ₃ , and Ga of IGZO (In ₂ O ₃ —Ga ₂ O ₃ —ZnO) having a content of 10 to 60 mass% in terms of Ga ₂ O ₃ and a Zn content of 10 to 60 mass% in terms of ZnO, and the content of Al being Al content of 0.1 to 5 wt% of AZO (Al ₂ O ₃ -ZnO), and Zn is exemplified such as 1 to 15% by weight of IZO (in ₂ O ₃ -ZnO) in terms of ZnO at ₂ O ₃ in terms of However, it is not limited to these.
The shape of the target material is not particularly limited, and may be a cylindrical shape or a plate shape. The target material is usually subjected to processing such as surface grinding after sintering.

<Underlayer made of In-Ni alloy>
An underlayer made of an In—Ni alloy is formed on at least one surface of the target material.
In order to avoid the drawbacks of the brazing material application using the ultrasonic welder as described above, it is considered to deposit nickel and indium in order by the ion plating method and then apply a brazing material containing 50 mass% or more of indium. To be Here, nickel adheres strongly to the ceramics agent, and indium grows in an island shape on nickel, so that subsequent brazing material application becomes easy and the sputtering target member and the backing member are easily joined. If In is not deposited during ion plating, wettability is poor and bonding is not performed even if an In brazing material is applied after ion plating.

  However, even if the brazing material is applied onto the indium grown in the shape of islands, voids are created between them, which may result in poor brazing material applicability and poor adhesion. The nickel and indium are alloyed to form a base layer made of an In-Ni alloy. Thereby, the gap between the underlayer and the brazing material can be reduced, the wettability with the brazing material is good, and the adhesion state between the target and the backing member is improved. Then, if the adhesion state between the target and the backing member is improved, the heat conduction is improved, so that the occurrence of cracks can be suppressed.

The thickness of the underlayer made of an In—Ni alloy is not limited, but from the viewpoint of uniformity of thickness and workability, it is preferably 0.2 to 10.0 μm, and 0.5 to 5.0 μm. Is more preferable and 1 to 2 μm is more preferable.
The thickness is measured by, for example, a FIB (focused ion beam processing observation device), and a surface perpendicular to the thickness direction of the target / bonding layer after applying the brazing material of indium is processed with an ion beam to a width of 30 μm, and SIM ( Scanning Ion Microscope) image is observed. The thickness can be measured by observing the SIM image, and 5 points are measured from 3 fields of view, and an average value is calculated to obtain the thickness.

  The composition of the underlayer made of an In-Ni alloy is not limited, but for example, from the viewpoint of alloying, Ni is preferably contained in an amount of 10 to 80% by mass, more preferably 20 to 50% by mass.

<Joining layer>
A bonding layer containing 50% by mass or more of indium is further formed on the base layer made of the In—Ni alloy. If the content of indium is 50% by mass or more, the wettability with the backing member can be secured. The content of indium is, for example, preferably 80% by mass or more, more preferably 90% by mass or more, and further preferably 100% by mass.
For example, as the bonding layer containing 50% by mass or more, there are In-52 wt% Sn-48 wt%, In alone, and the like.

  The bonding layer can be applied, for example, by rubbing an In brazing material with cotton or the like.

<Sputtering target member>
The sputtering target member in the present embodiment sequentially includes a base layer made of the above In—Ni alloy and a bonding layer containing 50% by mass or more of the indium.

  Generally, in ceramics, the surface condition greatly affects the mechanical strength. This is because minute irregularities on the surface start as cracks and grow into cracks, and there is a large correlation between surface roughness and mechanical strength. Therefore, also in this embodiment, the surface roughness of the target surface immediately after processing such as surface grinding is compared with the surface roughness of the target surface after ion plating or welding treatment and acid cleaning.

  As shown in the background art of Paragraph 0005, when a brazing material is applied to the target surface of a sputtering target by ultrasonic welding, fine scratches are caused due to contact of the horn and ultrasonic oscillation. The fine scratches increase the surface roughness of the surface of the target material. Therefore, when the brazing material is applied by ultrasonic welding and then the brazing material is removed with an acid, and the surface roughness of the target material is measured, the surface roughness increases as compared to immediately after processing such as surface grinding. It is normal to

  In the present embodiment, since it is not necessary to apply the brazing material to the surface of the target material using the ultrasonic welder, mechanical damage such as minute cracks on the surface can be reduced, and an increase in surface roughness can be suppressed. Compared to immediately after processing such as surface grinding, when the surface roughness Rz is measured again after removing In and Ni by acid cleaning such as nitric acid after the treatment such as ion plating, the surface roughness Rz before and after that is measured. The increase is preferably 15% or less, more preferably 10% or less, still more preferably 5% or less.

From the above viewpoint, regarding the surface roughness Rz of the target material, which is provided with an underlayer made of an In-Ni alloy and a bonding layer containing 50% by mass or more of indium in order, the surface roughness Rz of the target material is too rough. Therefore, Rz is preferably 15 μm or less from the viewpoint that the strength of the material decreases so that the strength does not differ between welding and ion plating. If the surface roughness Rz of the target material is too low, the adhesion of the Ni layer during ion plating may be deteriorated. Therefore, Rz is preferably 0.8 μm or more. The surface roughness Rz of the target material referred to here means the surface roughness Rz of the target material immediately after processing such as surface grinding and before providing the underlayer and the bonding layer. The target material having such a surface roughness Rz can be suitably used for manufacturing the sputtering target member of the present invention.
Further, as a method for measuring the surface roughness Rz of the target material, the surface roughness Rz is measured with a surface roughness meter (for example, Surftest SJ-301 manufactured by Mitutoyo Corporation). At this time, the measurement is performed parallel to the grinding streaks after the surface grinding.

The surface roughness Rz of the sputtering target member after providing the base layer and the bonding layer on the target material depends on the surface roughness Rz immediately after processing such as surface grinding. The mechanical strength of the material can be maintained because the surface roughness Rz after applying the In brazing material does not change (does not increase) with the surface roughness Rz immediately after processing such as surface grinding. The upper limit of the surface roughness Rz after providing the underlayer and the bonding layer is preferably 15.0 μm or less, and more preferably 7.0 μm or less. By setting the surface roughness Rz after providing the underlayer and the bonding layer to 15.0 μm or less, it is possible to prevent an excessive decrease in mechanical strength regardless of whether it is ion plating or welding. Further, the reason why it is more preferable to set the surface roughness Rz after providing the underlayer and the bonding layer to 7.0 μm or less is that it is effective to further maintain the mechanical strength (15 μm and 7 μm, (There is a difference between # 80 finish and # 400 finish, and the strength changes drastically). Further, the surface roughness Rz after providing the base layer and the bonding layer is more preferably 0.8 μm or more. By setting the surface roughness after the treatment to 0.8 μm or more, the processing time required for the surface finish does not become excessively long.
In the present invention, when simply referring to “surface roughness Rz of sputtering target member”, it means surface roughness Rz of the sputtering target member after the above-mentioned base layer and bonding layer are provided.
As a method for measuring the surface roughness Rz of the sputtering target member, after washing the underlayer and the bonding layer with an acid such as concentrated nitric acid, a surface roughness meter (for example, Surftest SJ-301 manufactured by Mitutoyo Corporation) is used. The surface roughness Rz is measured. At this time, the measurement is performed in parallel with the grinding line of the surface grinding. When the sputtering target member and the backing member are bonded to each other to form a sputtering target assembly, the surface roughness Rz of the sputtering target member is determined by removing the backing member and further cleaning the base layer and the bonding layer by acid cleaning. Measure after removing.

  The fact that In and Ni are alloyed can be confirmed by X-ray diffraction measurement and FE-EPMA. There are two types of methods: a method of measuring the sputtering target member after ion plating from the normal direction, or a method of measuring the vicinity of the target / deposited layer / brazing material interface in the cross section in the thickness direction of the sputtering target member. The latter can be measured in any state as long as it is after ion plating and heating. In fact, alloying can be confirmed by the disappearance of either the diffraction peak of metal In or metal Ni by X-ray diffraction measurement, and Ni and In are solid-solved by elemental mapping of FE-EPMA. You can also confirm from what you are doing.

  Further, as a method for evaluating the mechanical strength of the target, the bending strength of the target alone is evaluated (strength A) prior to the bonding work of the present invention, and the bending strength of the target after the bonding layer is removed after bonding. Is evaluated (strength B). This (strength A-strength B) / strength A × 100% is evaluated as the strength reduction rate. The bending strength was evaluated by a 3-point bending test, and an average value of 10 points was evaluated (strength measurement uses the same Lot sample. Although cutting positions are different, it can be assumed that the strengths are generally the same). Further, the removal of the bonding layer is performed by acid cleaning.

<Sputtering target assembly>
The sputtering target member and the backing member may be bonded to each other via the base layer and the bonding layer to form a sputtering target assembly. A method for joining the sputtering target member and the backing member will be described later.
The composition of the backing member is not particularly limited, but, for example, one made of copper, titanium or an alloy thereof can be used.

<Method for manufacturing sputtering target member>
In the present embodiment, the surface of the target material is not directly coated with the brazing material using the ultrasonic welder as described above. First, nickel and indium are sequentially deposited by the ion plating method, and then a hot plate or the like is used for 200 to 250. By heating at ° C, nickel and indium are alloyed to form a base layer made of an In-Ni alloy.

  Here, it is important to deposit nickel first and then indium by the ion plating method. If this order is reversed, indium does not adhere strongly to the target. The vapor deposition conditions of nickel and indium are not particularly limited, but Ni: 2.0 kÅ and In: 4.5 kÅ can be set as targets (the film thickness deposited by a crystal vibrating film thickness meter can be measured).

  In addition, it is important to set the heating temperature to 200 to 250 ° C. If the heating temperature is less than 200 ° C., the In brazing material is difficult to melt depending on the target size, and if it exceeds 250 ° C., the handling during bonding becomes poor. From this viewpoint, the heating temperature is preferably 200 to 250 ° C, more preferably 210 to 240 ° C.

  After forming a base layer made of an In—Ni alloy, a brazing material containing 50 mass% or more of indium is further applied to form a bonding layer. Further, the sputtering target assembly can be obtained by joining the backing member through the underlayer and the joining layer. Although the bonding conditions are not limited, for example, the bonding may be such that the brazing material thickness is 0.5 mm.

  Hereinafter, description will be made based on examples. It should be noted that the present embodiment is merely an example for facilitating understanding and is not limited to this example. That is, the present invention is limited only by the claims, and includes various modifications other than the embodiments described in the present invention.

(Example)
A plate-shaped sintered body sputtering target material having the composition shown in Table 1 was prepared. Nickel and indium were sequentially deposited on the surface of this target material under the conditions of aiming at Ni: 2.0 kÅ and In: 4.5 kÅ. Next, the target material was heated at a temperature shown in Table 1 on a hot plate to alloy nickel with indium to form a base layer made of an In-Ni alloy. Further, a brazing material containing 100% by mass of indium was applied at 200 ° C. using cotton.

(Comparative example)
A plate-shaped sintered body sputtering target material having the composition shown in Table 1 was prepared. The underlayer shown in Table 1 was deposited on the surface of this target material. Next, the target material was heated at a temperature shown in Table 1 on a hot plate to alloy nickel with indium to form an underlayer made of an In-Ni alloy. Further, a brazing material containing 100% by mass of indium was applied at 200 ° C. using cotton.

Nickel and indium are sequentially deposited on the surface of a sputtering target member made of the same material as in Example 1 under the conditions of Ni: 2.0 kÅ and In: 4.5 kÅ, and 150 ° C, 200 ° C, 250 ° C, 300 ° C. Was heated at a temperature of 1 to alloy nickel and indium to form a base layer made of an In-Ni alloy. Further, a brazing material containing 100% by mass of indium was applied at 200 ° C. using cotton.
Each sputtering target member was subjected to elemental mapping by FE-EPMA and X-ray diffraction (XRD) analysis under the conditions of 30 to 60 ° and 5 ° / min, and the results are shown in FIGS. 1 and 2, respectively.
From FIGS. 1 and 2, it can be seen that In is a state where In is deposited on the Ni film in an island shape at 150 ° C. heating, and the shape is maintained at 200 ° C., but In and Ni start to react. Upon heating at 250 ° C., the island shape of In is completely collapsed and the whole is alloyed. A schematic diagram of alloying is shown at the bottom of FIG.

Moreover, about the target material of each Example and a comparative example, the surface roughness Rz was measured by the surface roughness meter (Surftest SJ-301 manufactured by Mitutoyo Corporation), and for the sputtering target member, the underlayer and the bonding layer were concentrated nitric acid. The surface roughness Rz was measured with a surface roughness meter (Surftest SJ-301 manufactured by Mitutoyo Co., Ltd.), the rate of increase in the surface roughness Rz was calculated, and the results are shown in Table 1. The negative increase rate of the surface roughness means that the surface roughness Rz has decreased.
From Table 1, it can be seen that the sample treated by ion plating is suppressed in the increase of the surface roughness Rz. The suppression of the increase in surface roughness means that the unevenness of the surface is small and the occurrence of cracks can be suppressed.

The bending strength of each of the sputtering target members of Examples and Comparative Examples was measured by a three-point bending test, and the results are shown in Table 1 and FIG.
It is known that the bending strength of ceramic materials generally follows Weibull statistics. It can be seen from FIG. 3 that the sample treated by ion plating has a higher average intensity than the sample treated by welding. Further, when analyzed by Weibull statistics, the probability of destruction at a certain strength (cumulative destruction probability) is higher in the sample subjected to the welding process. From this, it can be seen that the crack generation from the bonding surface in the actual product is suppressed. The reason why the strength is lowered by the welding treatment is that fine scratches are generated on the surface and cracks are generated from the scratches, and as shown in Table 1, the surface roughness appears.

  The bonding state of the indium brazing material and the target material was measured by a cross cut test. As a method, 1 mm square and 5 × 5 grids were cut with a cutter knife, the tape was attached and then the tape was peeled off, and the degree of peeling of the indium brazing material was confirmed. As an evaluation method, 25 squares were peeled off at four places, and the number of squares peeled out of 100 squares was compared. The ratio of the mass in which peeling occurred is shown as "Peeling rate" in Table 1.

* 1 Measures the surface roughness Rz of the target material before providing the underlayer and / or the bonding layer.
* 2 Measured for the surface roughness Rz of the sputtering target member after providing the underlayer and / or the bonding layer.

Regarding Examples 1 to 3, it can be seen that even if the target is changed, the strength can be maintained and the peeling rate does not matter under the conditions specified by the present invention. As for Example 4, it can be seen that there is no problem even if the brazing material is changed. In Examples 5 and 6, the thickness of the ion plating layer is increased, and there is no problem in strength and peeling rate. However, in order to stack the ion plating layer above the upper limit, the working time is the same as in Examples 1 to 4. A little inferior. In Examples 7 and 8, the thickness of the ion plating layer was thin, and there is no problem in strength and peeling rate in Examples, but when applied to a large size sample, unevenness during ion plating causes It is not optimal because the surface may be exposed. Regarding Example 9 as well, there is no problem in strength and peeling rate, but as compared with Example 1, since the bonding temperature is low, the alloying speed is slow and the work takes time, so Example 1 is superior. I understand. Also in Example 10, there is no problem in strength and peeling rate, but if the bonding temperature is high, handling at the time of bonding becomes poor, so heating at 250 ° C. or lower is preferable. In Example 11, the peeling rate is increased as compared with Examples 1 to 10 by lowering Rz on the surface of the target material to make it a mirror surface, but there is a problem from the viewpoint of surface roughness / strength. Absent. Since it takes a considerable time for surface grinding to make it a mirror surface, it is not necessary to adopt it as an actual manufacturing condition unless it is particularly necessary.
In Comparative Example 1, only In was ion-plated on the surface of the target material, but since In is not strongly bonded to the surface of the target material, the peeling rate is high. In Comparative Example 2, only Ni was ion-plated on the surface of the target material, but even if In was applied on Ni, the wettability was poor and the bonding was not achieved. Regarding Comparative Example 3, when the temperature at the time of bonding is lowered, In may be partially solidified when the In brazing material is applied to the ion plating surface, and there is a possibility that bonding cannot be performed. Regarding Comparative Examples 4 to 6, the strength is lowered by the welding treatment. In Comparative Example 7, the case where the surface of the target before the treatment is too rough is taken up, but in that case, since the original strength is low, the strength does not decrease even if the welding treatment is performed (ion plating). Cannot be expected). However, since the strength itself is low, it is not preferable as a target for sputtering.

Further, with respect to the sputtering target members of Examples and Comparative Examples, a cross section in the thickness direction was observed with a focused ion beam (FIB) with a width of 5 μm, and the result is shown in FIG.
From FIG. 4, it is recognized that the ultrasonic welding product has a rougher outermost surface of the sputtering target member than the ion plating product, and fine cracks are generated due to welding. As can be seen from FIG. 4, in the ion-plated product, a processing damage layer due to surface grinding remains on the target surface, but the outermost surface is smooth. In the welded product, the processing damage layer has been removed due to ultrasonic oscillation and the like, and has a crack far deeper than the surface-altered layer. These cracks become the starting points of cracks in the bending test, resulting in a decrease in strength.

Claims (12)

A target material comprising an oxide ceramics sintered body containing at least one of In, Zn, Ga and Sn ;
A sputtering target member, which comprises, on at least one surface of the target material, an underlayer made of an In-Ni alloy and a bonding layer containing 50% by mass or more of indium in this order.   The sputtering target member according to claim 1, wherein the underlayer made of the In-Ni alloy has a thickness of 0.2 to 10.0 µm.   Surface roughness Rz is 15 micrometers or less, The sputtering target member of Claim 1 or 2 characterized by the above-mentioned.   The sputtering target member according to claim 1, wherein the surface roughness Rz is 0.8 μm or more and 7 μm or less.   The sputtering target member according to any one of claims 1 to 4, wherein the underlayer made of the In-Ni alloy contains 10 to 80% by mass of Ni. The sputtering target member according to any one of claims 1 to 5, the content of Sn is equal to or 1 to 10 wt% of ITO in terms of SnO _2. IGZO having an In content of 10 to 60% by mass in terms of In ₂ O ₃ , a Ga content of 10 to 60% by mass in terms of Ga ₂ O ₃ , and a Zn content of 10 to 60% by mass in terms of ZnO. the sputtering target member according to any one of claims 1 to 5, characterized in that. The sputtering target member according to any one of claims 1 to 5, the content of Zn is characterized in that it is a IZO 1-15 wt% in terms of ZnO. A sputtering target assembly in which the sputtering target member according to any one of claims 1 to 9 and a backing member are bonded to each other via the base layer and the bonding layer. It is a manufacturing method of the sputtering target member as described in any one of Claims 1-8 , Comprising:
After depositing nickel and indium in order by an ion plating method on the surface of a target material made of an oxide ceramics sintered body containing at least one of In, Zn, Ga, and Sn , 200 to 250 on a hot plate. A sputtering target characterized by including a step of alloying nickel and indium by heating at ℃ to form an underlayer made of an In-Ni alloy, and further applying a brazing material containing 50% by mass or more of indium. A method of manufacturing a member. The method for manufacturing a sputtering target member according to claim 10 , wherein the surface roughness Rz of the target material is 0.8 μm or more and 15 μm or less. The surface roughness Rz of the said sputtering target member is 0.8 micrometer or more and 15 micrometers or less, The manufacturing method of the sputtering target member of Claim 10 or 11 characterized by the above-mentioned.