TWI403605B - Divided sputtering target and method of producing the same - Google Patents
Divided sputtering target and method of producing the same Download PDFInfo
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- TWI403605B TWI403605B TW100127169A TW100127169A TWI403605B TW I403605 B TWI403605 B TW I403605B TW 100127169 A TW100127169 A TW 100127169A TW 100127169 A TW100127169 A TW 100127169A TW I403605 B TWI403605 B TW I403605B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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Abstract
Description
本發明是有關接合複數個靶構件而得之分割濺鍍靶，尤其是有關在靶構件為由氧化物半導體構成之際適用之分割濺鍍靶。The present invention relates to a split sputtering target obtained by bonding a plurality of target members, and more particularly to a split sputtering target which is applied when the target member is made of an oxide semiconductor.
近年，濺鍍法在製造資訊機器、AV機器、家電製品等各種電子零組件之際用得很多，例如，在液晶顯示裝置等之顯示裝置中，薄膜電晶體(簡稱TFT)等之半導體元件就是藉由濺鍍法形成。因為濺鍍法是極為有效的將構成透明電極層等之薄膜，以大面積、高精度形成的製法。In recent years, the sputtering method has been widely used in the production of various electronic components such as information equipment, AV equipment, and home electric appliances. For example, in a display device such as a liquid crystal display device, a semiconductor element such as a thin film transistor (TFT) is It is formed by sputtering. The sputtering method is a very effective method for forming a film of a transparent electrode layer or the like and forming it in a large area with high precision.
然而，最近之半導體元件中，以IGZO(In-Ga-Zn-O)所代表的氧化物半導體取代非結晶矽甚受注目。於是，關於此氧化物半導體，也被列入利用濺鍍法進行氧化物半導體薄膜成膜之計畫中。然而，濺鍍時使用之氧化物半導體的濺鍍靶，由於其素材是陶瓷，故很難以一片靶構件構成大面積的靶。因此，準備複數片具有某程度大小之氧化物半導體靶構件，並在具有所期望面積之背板上進行接合，以製造大面積的氧化物半導體濺鍍靶(例如，參照專利文獻1)。However, in recent semiconductor elements, the replacement of amorphous ruthenium by an oxide semiconductor represented by IGZO (In-Ga-Zn-O) has been attracting attention. Therefore, this oxide semiconductor is also included in the plan for film formation of an oxide semiconductor thin film by sputtering. However, since the sputtering target of the oxide semiconductor used for sputtering is ceramic, it is difficult to form a large-area target with one target member. Therefore, a plurality of oxide semiconductor target members having a certain size are prepared, and bonding is performed on a backing plate having a desired area to produce a large-area oxide semiconductor sputtering target (for example, see Patent Document 1).
此濺鍍靶的背板，通常使用銅製的背板，該背板與靶構件之接合係使用熱傳導良好的低熔點焊錫，例如In系之金屬。例如，在製造大面積、板狀的氧化物半導體濺鍍靶之際，準備大面積的銅製背板，將此背板表面分成複數區域，準備複數片符合該區域面積之氧化物半導體靶構件。於是，在背板上配置複數個靶構件，藉由In系或Sn系金屬的低熔點焊錫，將全部之靶構件在背板上進行接合。接合之際，考慮Cu與氧化物半導體之熱膨脹差，在鄰接之靶構件間，以在室溫時可形成0.1mm至1.0mm間隙之方式調整配置。For the backing plate of the sputtering target, a copper backing plate is usually used, and the bonding of the backing plate to the target member uses a low-melting solder having good heat conduction, such as an In-based metal. For example, in the production of a large-area, plate-shaped oxide semiconductor sputtering target, a large-area copper backing plate is prepared, and the surface of the backing plate is divided into a plurality of regions, and a plurality of oxide semiconductor target members conforming to the area of the region are prepared. Then, a plurality of target members are placed on the back sheet, and all of the target members are joined to the back sheet by low-melting solder of In-based or Sn-based metal. At the time of bonding, the difference in thermal expansion between Cu and the oxide semiconductor is considered, and the arrangement between the adjacent target members is such that a gap of 0.1 mm to 1.0 mm can be formed at room temperature.
使用如此將複數氧化物半導體靶構件接合而得之分割濺鍍靶，並藉由濺鍍使薄膜成膜而形成半導體元件時，在濺鍍處理中，從靶構件間的間隙使背板之構成材料Cu也被濺鍍，有所謂混入形成的氧化物半導體薄膜中之問題的疑慮。薄膜中的Cu雖僅有數ppm程度的混入量，但對氧化物半導體之影響極大，例如，TFT元件特性中的電場效果移動度，在相當於靶構件間的間隙位置所形成的半導體元件(混入Cu之薄膜)，與其他部分的半導體元件相比，有變低之傾向，ON/OFF比也有變低之傾向。如此不妥當現象，被指責為以往大面積化傾向的主要阻礙原因，目前要求急速改善技術。再者，如此之分割濺鍍靶的問題，係即使在靶構件為氧化物半導體以外的材質時，也有產生同樣不妥當現象之可能性，為了促進濺鍍靶的大面積化，是必需解決的課題。When a divided sputtering target obtained by bonding a plurality of oxide semiconductor target members is formed and a thin film is formed by sputtering to form a semiconductor element, the composition of the back plate is formed from the gap between the target members in the sputtering process. The material Cu is also sputtered, and there is a concern that it is mixed into the formed oxide semiconductor film. Although the amount of Cu in the film is only a few ppm, the influence on the oxide semiconductor is extremely large. For example, the degree of mobility of the electric field effect in the characteristics of the TFT element is a semiconductor element formed at a position corresponding to a gap between the target members (mixed in The film of Cu has a tendency to become lower than that of other semiconductor elements, and the ON/OFF ratio tends to be lower. Such an inappropriate phenomenon has been accused of being the main obstacle to the trend of large-area in the past, and it is currently demanding rapid improvement of technology. Further, the problem of such a split sputtering target is that even when the target member is made of a material other than an oxide semiconductor, there is a possibility that the same problem may occur, and it is necessary to solve the problem of increasing the area of the sputtering target. Question.
專利文獻1：日本特開2005-232580號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2005-232580
本發明是在如以上事情之背景下所成者，以提供一種分割濺鍍靶為目的，係具有大面積的濺鍍靶，藉由將複數靶構件接合而得之分割濺鍍靶，經由濺鍍形成薄膜時，可以有效防止背板的構成材料混入成膜之薄膜中。The present invention has been made in the context of the above, and is intended to provide a sputtering target having a large area, and a sputtering target which is obtained by joining a plurality of target members by sputtering When the film is formed by plating, it is possible to effectively prevent the constituent material of the back sheet from being mixed into the film formed.
為了解決上述課題，本發明之特徵係在背板上，藉由低熔點焊錫接合複數個靶構件而形成的分割濺鍍靶中，沿著接合之靶構件間所形成的間隙，在背板上設置保護體。依據本發明，在背板上接合之靶構件間所形成的間隙，並未露出背板表面，可以有效地防止背板之結構材料被濺鍍。In order to solve the above problems, the present invention is characterized in that a slit sputtering target formed by bonding a plurality of target members by a low melting point solder on a backing plate is formed on a backing plate along a gap formed between the bonded target members. Set the protection body. According to the present invention, the gap formed between the target members joined on the backing plate does not expose the surface of the backing plate, and the structural material of the backing plate can be effectively prevented from being sputtered.
本發明中之保護體，係指覆蓋在背板上已接合之靶構件間所形成的間隙處露出的背板表面者，係指具有使對成膜之薄膜具有不良影響的物質，在濺鍍時不由間隙發生之作用者。作為如此之保護體，係在背板表面，配置帶狀的保護構件，或是將成為保護體之物質，藉由塗布、鍍覆、濺鍍等方法設置，以氧化背板本身之表面形成氧化被膜而設置。尤其，本發明中，保護體是以配置帶狀的保護構件為佳。The protective body in the present invention refers to a surface of the back sheet which is exposed at a gap formed between the bonded target members on the back sheet, and has a substance which has an adverse effect on the film formed by the film, and is sputtered. When the gap does not occur. As such a protective body, a strip-shaped protective member or a substance to be a protective body is disposed on the surface of the back sheet, and is formed by coating, plating, sputtering, or the like to oxidize the surface of the oxidized back sheet itself. Set by the film. In particular, in the present invention, the protective body is preferably a protective member in the form of a belt.
作為如此保護體之材質，即使混入成膜之薄膜中也不會賦與不良影響的物質，例如，可以使用構成靶構件的組成元素中的全部或一部分、含有此等元素之合金或氧化物等。As a material of such a protective body, even if it is mixed in the film formed into a film, it does not give a bad influence. For example, all or a part of the constituent elements constituting the target member, an alloy containing these elements, an oxide, or the like can be used. .
又，作為別的材質者，係在濺鍍時可以抑制間隙內部的濺鍍現象之物質，例如，可以使用其體積電阻比靶構件大的物質，亦即將高電阻物質作為保護體。將如此高電阻物質作為保護體使用時，高電阻物質的體積電阻率(Ω‧cm)以具有靶構件的體積電阻率10倍以上值之物質為佳。Further, as another material, a substance capable of suppressing sputtering inside the gap during sputtering can be used. For example, a material having a larger volume resistance than the target member can be used, that is, a high-resistance substance can be used as a protective body. When such a high-resistance substance is used as a protective body, the volume resistivity (Ω‧ cm) of the high-resistance substance is preferably a substance having a value of 10 times or more the volume resistivity of the target member.
又，關於上述保護體之材質，此材質之化學組成與為了與背板接合而使用的低熔點焊錫之化學組成在實質上是相異者。例如，將金屬銦作為低熔點焊錫使用時，此時的保護體是指不是金屬銦之意思。又，在靶構件間之間隙，雖有殘留低熔點焊錫的金屬銦之情形，但在此間隙殘留的銦固化之際，其表面會氧化。在如此接合中使用之低熔點焊錫的金屬銦於間隙中固化之情形，在該銦表面由於難以形成均勻的氧化膜，故不能發揮與作為上述本發明的保護體的高電阻物質的同樣效果。Further, regarding the material of the protective body, the chemical composition of the material is substantially different from the chemical composition of the low melting point solder used for bonding to the back sheet. For example, when metal indium is used as a low melting point solder, the protective body at this time means that it is not metallic indium. Further, in the case of the metal indium having a low melting point solder remaining in the gap between the target members, the surface remains oxidized when the indium remaining in the gap is solidified. When the metal indium of the low-melting-point solder used for such bonding is solidified in the gap, it is difficult to form a uniform oxide film on the surface of the indium, so that the same effect as the high-resistance substance as the protective body of the present invention described above cannot be exhibited.
本發明中之分割濺鍍靶，係以板狀、圓筒狀者作為對象。板狀之濺鍍靶是在板狀背板上，將具有方形面之複數板狀靶構件平面配置後接合者作為對象。又，圓筒狀之濺鍍靶是在圓筒狀背板上，將複數圓筒狀靶構件(中空圓柱)貫通，在圓筒狀背板之圓柱軸方向配置成多段狀並且接合者，或是，將中空圓柱沿圓柱軸方向縱向割切之彎曲狀靶構件，往圓筒狀背板之外側面，在圓周方向複數並列並經接合者為對象。此板狀或圓筒狀之分割濺鍍靶，在大面積的濺鍍裝置中用得很多。又，本發明雖是以板狀、圓筒狀之形狀作為對象，但並不妨礙對其他形狀的分割濺鍍靶之應用，有關靶構件並未限制為此形狀。因此，關於靶構件之組成，也可以適用IGZO或ZTO等氧化物半導體或透明電極(ITO)或Al等金屬，靶構件之組成方面也沒有限制。The split sputtering target in the present invention is intended to be a plate or a cylinder. The plate-shaped sputtering target is a plate-shaped back plate, and a plurality of plate-shaped target members having a square surface are arranged in a plane and then joined. Further, the cylindrical sputtering target is formed by penetrating a plurality of cylindrical target members (hollow cylinders) on a cylindrical back plate, and is arranged in a plurality of stages in the cylindrical axis direction of the cylindrical back plate, and is joined, or In the curved outer surface of the cylindrical back plate, the curved target member is cut longitudinally in the direction of the cylindrical axis, and is juxtaposed in the circumferential direction and joined by the joint. This plate-shaped or cylindrical split sputtering target is used in a large-area sputtering apparatus. Further, although the present invention is applied to a plate shape or a cylindrical shape, it does not hinder the application to other types of split sputtering targets, and the target member is not limited to this shape. Therefore, an oxide semiconductor such as IGZO or ZTO, or a transparent electrode (ITO) or a metal such as Al can be applied to the composition of the target member, and the composition of the target member is not limited.
本發明中之保護體，係以Zn、Ti、Sn任何一種金屬箔，或是含有80質量%以上之Zn、Ti、Sn中任何一種以上之金屬箔，或是陶瓷薄片或高分子薄片為宜。只要是如此之金屬箔或陶瓷薄片，與In系或Sn系金屬之低熔點焊錫的反應性低，氧化物半導體成膜之情形，即使微量地混入成膜之氧化物半導體薄膜中，與Cu比較，對TFT元件特性之影響也可以變少。The protective body in the present invention is preferably a metal foil of Zn, Ti or Sn, or a metal foil containing at least 80% by mass of Zn, Ti or Sn, or a ceramic flake or a polymer flake. . As long as such a metal foil or a ceramic sheet is low in reactivity with a low melting point solder of an In-based or Sn-based metal, the oxide semiconductor is formed into a film, and even if it is mixed in a small amount into a film-forming oxide semiconductor film, compared with Cu The influence on the characteristics of the TFT element can also be reduced.
又，由於高分子薄片是高電阻物質，故在濺鍍時，於靶構件間的間隙中能抑制濺鍍現象，可以防止對成膜之薄膜的不良影響。作為陶瓷薄片者，可以使用氧化鋁或氧化矽系之薄片。作為本發明中高分子薄片的材質者，可以列舉：酚樹脂、美耐敏(三聚氰胺)樹脂、環氧樹脂、脲醛樹脂、氯化乙烯樹脂、聚乙烯、聚丙烯等合成樹脂材料；或是聚乙烯、聚氯化乙烯、聚丙烯、聚苯乙烯等泛用塑膠材料；聚醋酸乙烯酯、ABS樹脂、AS樹脂、丙烯酸樹脂等準泛用塑膠材料等。再者，也可以使用聚甲醛、聚碳酸酯、改質聚苯基醚(PPE)、聚對苯二甲酸二丁酯等工程塑膠；或是聚芳基酸酯(Polyarylate)、聚碸、聚苯基硫化物、聚醚醚酮、聚醯亞胺樹脂、氟素樹脂等超工程塑膠。尤其，聚醯亞胺樹脂等也是帶狀之材料，由於耐熱性、絕緣性也高，故為適用於本發明者。Further, since the polymer sheet is a high-resistance substance, sputtering can be suppressed in the gap between the target members at the time of sputtering, and the adverse effect on the film formed can be prevented. As the ceramic sheet, an alumina or cerium oxide-based sheet can be used. Examples of the material of the polymer sheet in the present invention include a phenol resin, a melamine resin, an epoxy resin, a urea resin, a vinyl chloride resin, a synthetic resin material such as polyethylene or polypropylene, or a polyethylene. , Polyvinyl chloride, polypropylene, polystyrene and other general-purpose plastic materials; polyvinyl acetate, ABS resin, AS resin, acrylic resin and other quasi-universal plastic materials. Furthermore, it is also possible to use engineering plastics such as polyoxymethylene, polycarbonate, modified polyphenyl ether (PPE), and polybutylene terephthalate; or polyarylate, polyfluorene, poly Super engineering plastics such as phenyl sulfide, polyether ether ketone, polyimide resin, and fluororesin. In particular, a polyimide resin or the like is also a belt-shaped material and is suitable for use by the present inventors because of its high heat resistance and insulation properties.
金屬箔或是陶瓷薄片、或是高分子薄片的厚度是以0.0001mm至1.0mm為佳。金屬箔或是陶瓷薄片的寬度是與在靶構件間所形成的間隙相同，或是此以上之寬度為佳，考慮到作業性等時，以在5.0mm至20mm寬度為佳。又，在背板上配置Zn、Ti、Sn之任一金屬箔，或是含有80質量%以上之Zn、Ti、Sn之任一種以上之合金箔，或是陶瓷薄片或高分子薄片時，可以使用低熔點焊錫或導電性兩面膠帶等加以黏貼。The thickness of the metal foil or ceramic sheet or the polymer sheet is preferably 0.0001 mm to 1.0 mm. The width of the metal foil or the ceramic sheet is the same as the gap formed between the target members, or the width of the above is preferable, and it is preferably from 5.0 mm to 20 mm in consideration of workability and the like. Further, when any one of Zn, Ti, and Sn, or an alloy foil containing at least 80% by mass of Zn, Ti, or Sn, or a ceramic sheet or a polymer sheet, is disposed on the back sheet, Use a low melting point solder or a conductive double-sided tape to adhere.
本發明中之保護體，係以具有將帶狀之第1保護構件與帶狀之第2保護構件的積層結構為佳，積層有如此之帶狀保護構件之結構時，可以容易進行製造本發明相關之分割濺鍍靶，可以配合靶構件或背板的材質適當選擇第1保護構件與第2保護構件之材質。此第1保護構件與第2保護構件之帶狀寬度可以相等，也可以相異。又，此積層結構之保護體，係使第1保護構件在靶構件側、第2保護構件在背板側之狀態，沿著接合之靶構件間所形成的間隙配置。In the protective body of the present invention, it is preferable to have a laminated structure in which a strip-shaped first protective member and a strip-shaped second protective member are laminated, and when such a strip-shaped protective member is laminated, the present invention can be easily produced. The material of the first protective member and the second protective member can be appropriately selected in accordance with the material of the target member or the back plate in the relevant split sputtering target. The strip widths of the first protective member and the second protective member may be equal or different. Further, the protective body of the laminated structure is disposed such that the first protective member is placed on the target member side and the second protective member on the backing plate side along the gap formed between the joined target members.
本發明中之保護體藉由帶狀的保護構件來設置之情形，積層狹幅之第1保護構件與寬幅之第2保護構件，可以作成在第1保護構件之兩端側露出第2保護構件的結構。在此結構，變成於寬幅之第2保護構件之上積層狹幅的第1保護構件之二層結構。靶構件與背板的接合雖藉由In或Sn等低熔點焊錫來進行，但可預想藉由接合時之加熱處理，保護構件與低熔點焊錫反應而合金化。為了反覆使用此接合的低熔點焊錫，使用頻率變高時，藉由與保護構件之合金化，低熔點焊錫的組成會產生變動，靶構件與背板之接合變得不充分，被認為對接合強度或接合面積有不良之影響。在此，選擇與低熔點焊錫不反應之材料作為第2保護構件，藉由在其上設置與低熔點焊錫容易反應材料之第1保護構件，則能抑制第1保護構件與低熔點焊錫之接觸，可以防止低熔點焊錫的組成變動。In the case where the protective body of the present invention is provided by a belt-shaped protective member, the first protective member having a narrow width and the second protective member having a wide width can be formed to expose the second protection on both end sides of the first protective member. The structure of the component. In this configuration, the two-layer structure of the first protective member having a narrow width is formed on the wide second protective member. Although the bonding of the target member and the back sheet is performed by a low melting point solder such as In or Sn, it is expected that the protective member is alloyed with the low melting point solder by heat treatment at the time of bonding. In order to repeatedly use the bonded low-melting solder, when the frequency of use is increased, the composition of the low-melting-point solder fluctuates by alloying with the protective member, and the bonding between the target member and the backing plate is insufficient, and it is considered that the bonding is performed. The strength or joint area has an adverse effect. Here, a material which does not react with the low melting point solder is selected as the second protective member, and by providing the first protective member which is easily reacted with the low melting point solder, the contact between the first protective member and the low melting point solder can be suppressed. It can prevent the composition change of the low melting point solder.
本發明中，積層帶狀保護構件而設置保護體的情形，第1保護構件的厚度是以0.0001mm至0.3mm為佳，第2保護構件的厚度是以0.1mm至0.7mm為佳。第1保護構件與第2保護構件的合計厚度是0.3mm至1.0mm為佳。又，積層同寬度之第1保護構件與第2保護構件時，保護構件的寬度是以5mm至30mm為佳。積層狹幅的第1保護構件與寬幅的第2保護構件時，第1保護構件的寬度是與在靶構件間形成的間隙相同、或是比此大之寬度為佳，考慮到作叢性等時，以5mm至20mm為佳。寬幅的第2保護構件的寬度以比第1保護構件的寬度寬3mm至10 mm為佳。In the present invention, when the protective member is provided by laminating the strip-shaped protective member, the thickness of the first protective member is preferably 0.0001 mm to 0.3 mm, and the thickness of the second protective member is preferably 0.1 mm to 0.7 mm. The total thickness of the first protective member and the second protective member is preferably 0.3 mm to 1.0 mm. Further, when the first protective member and the second protective member having the same width are laminated, the width of the protective member is preferably 5 mm to 30 mm. When the first protective member having a narrow width and the second protective member having a wide width are formed, the width of the first protective member is the same as the gap formed between the target members, or the width is larger than this, and it is considered to be a cluster. When it is equal, it is preferably 5 mm to 20 mm. The width of the wide second protective member is preferably 3 mm to 10 mm wider than the width of the first protective member.
又，本發明中之保護體，也可以是由第1保護構件與在第1保護構件的兩端側並列配置之第2保護構件所成的三列結構。如此，在第1保護構件的兩側並列配置第2保護構件時，變成與積層上述狹幅與寬幅的保護構件之二層結構的保護體發揮同樣效果。又，第1保護構件的兩端側是指在帶狀之第1保護構件的長方向延伸的兩邊。作成此三列結構的保護體時，第1保護構件及第2保護構件的厚度是以0.0001mm至1.0mm為佳。又，第1保護構件的寬度是與在靶構件間形成的間隙相同、或是比此大之寬度為佳，考慮到作業性等時，以5mm至20mm為佳。第2保護構件的寬度是以3mm至10mm為佳。Moreover, the protective body in the present invention may have a three-row structure in which the first protective member and the second protective member which are arranged side by side on both end sides of the first protective member. When the second protective member is arranged in parallel on both sides of the first protective member, the same effect can be obtained as a protective body having a two-layer structure in which the narrow and wide protective members are laminated. Further, both end sides of the first protective member mean both sides extending in the longitudinal direction of the strip-shaped first protective member. When the protective body of the three-column structure is formed, the thickness of the first protective member and the second protective member is preferably 0.0001 mm to 1.0 mm. Further, the width of the first protective member is the same as or smaller than the gap formed between the target members, and it is preferably 5 mm to 20 mm in consideration of workability and the like. The width of the second protective member is preferably from 3 mm to 10 mm.
本發明中保護體作成上述二層結構或是三列結構的情形，將第2保護構件作成由Cu、Al、Ti、Ni、Zn、Cr、Fe的任何單一金屬或是含有此等之任何合金所成的金屬箔，將第1保護構件，以含有靶構件所含元素的一種以上的單一金屬或是合金或陶瓷材料形成者為佳。本發明中靶構件為藉由氧化物半導體所構成時，以構成靶構件的氧化物半導體所含元素的一種所成之單一金屬或合金或是陶瓷材料形成第1保護構件為佳。In the case where the protective body of the present invention is formed into the above two-layer structure or a three-column structure, the second protective member is made of any single metal of Cu, Al, Ti, Ni, Zn, Cr, Fe or any alloy containing the same. In the formed metal foil, it is preferable that the first protective member is formed of one or more single metals or alloys or ceramic materials containing elements contained in the target member. In the present invention, when the target member is composed of an oxide semiconductor, it is preferable to form the first protective member by a single metal or alloy or a ceramic material which is one of the elements constituting the oxide semiconductor of the target member.
本發明中之保護體作成上述二層結構或是三列結構的情形，第1保護構件以由含有In、Zn、Al、Ga、Zr、Ti、Sn、Mg的任何一種以上的氧化物或是氮化物所成的陶瓷材料形成為佳。只要是此等陶瓷材料，由於與靶構件有相同組成，或一部分之組成與靶構件相同，故即使於成膜之際混入膜中，對TFT元件特性的影響也小。又，只要為ZrO2 、Al2 O3 等陶瓷材料，由於電阻高，可以抑制在濺鍍之際對分割部分的電漿進入，可以有效防止Zr或Al的濺鍍。作為該陶瓷材料者，例如可以列舉In2 O3 、ZnO、Al2 O3 、ZrO2 、TiO2 、IZO、IGZO等；或是ZrN、TiN、AlN、GaN、ZnN、InN等。又，此等陶瓷材料，由於很難加工作成如金屬般的箔，故利用蒸鍍法、濺鍍法、電漿熔射法、塗布法等形成第1保護構件，可以適用於本發明。In the case where the protective body of the present invention is formed into the above two-layer structure or a three-column structure, the first protective member is made of any one or more oxides containing In, Zn, Al, Ga, Zr, Ti, Sn, and Mg, or A ceramic material formed of nitride is preferably formed. As long as these ceramic materials have the same composition as the target member, or a part of the composition is the same as the target member, even if it is mixed into the film during film formation, the influence on the characteristics of the TFT element is small. Further, as long as the ceramic material such as ZrO 2 or Al 2 O 3 has high electric resistance, it is possible to suppress plasma from entering the divided portion at the time of sputtering, and it is possible to effectively prevent sputtering of Zr or Al. Examples of the ceramic material include In 2 O 3 , ZnO, Al 2 O 3 , ZrO 2 , TiO 2 , IZO, IGZO, and the like; or ZrN, TiN, AlN, GaN, ZnN, InN, or the like. Moreover, since such a ceramic material is difficult to work as a metal-like foil, the first protective member can be formed by a vapor deposition method, a sputtering method, a plasma spray method, a coating method, or the like, and can be applied to the present invention.
本發明中靶構件為氧化物半導體的情形，該氧化物半導體可使用由含有In、Zn、Ga中任何一種以上的氧化物所成者。具體上，可以列舉IGZO(In-Ga-Zn-O)、GZO(Ga-Zn-O)、IZO(In-Zn-O)、ZnO。In the case where the target member is an oxide semiconductor in the present invention, the oxide semiconductor may be formed of an oxide containing at least one of In, Zn, and Ga. Specific examples thereof include IGZO (In-Ga-Zn-O), GZO (Ga-Zn-O), IZO (In-Zn-O), and ZnO.
又，本發明中靶構件為氧化物半導體的情形，該氧化物半導體可使用由含有Sn、Ti、Ba、Ca、Zn、Mg、Ge、Y、La、Al、Si、Ga中任何一種以上的氧化物所成者。具體上，可以列舉Sn-Ba-O、Sn-Zn-O、Sn-Ti-O、Sn-Ca-O、Sn-Mg-O、Zn-Mg-O、Zn-Ge-O、Zn-Ca-O、Zn-Sn-Ge-O、或是，將此等氧化物的Ge變更成Mg、Y、La、Al、Si、Ga的氧化物。Further, in the case where the target member is an oxide semiconductor in the present invention, any one or more of Sn, Ti, Ba, Ca, Zn, Mg, Ge, Y, La, Al, Si, and Ga may be used as the oxide semiconductor. Oxide is formed. Specific examples thereof include Sn-Ba-O, Sn-Zn-O, Sn-Ti-O, Sn-Ca-O, Sn-Mg-O, Zn-Mg-O, Zn-Ge-O, and Zn-Ca. -O, Zn-Sn-Ge-O, or the Ge of these oxides is changed to an oxide of Mg, Y, La, Al, Si, Ga.
因此，本發明中靶構件為氧化物半導體的情形，該氧化物半導體可使用由含有Cu、Al、Ga、In的任何一種以上之氧化物所成者。具體上，可以列舉：Cu2 O、CuAlO2 、CuGaO2 、CuInO2 。Therefore, in the case where the target member is an oxide semiconductor in the present invention, the oxide semiconductor can be formed from any one or more oxides containing Cu, Al, Ga, and In. Specifically, Cu 2 O, CuAlO 2 , CuGaO 2 , and CuInO 2 may be mentioned.
依據本發明，將複數個靶構件接合而得到的分割濺鍍靶中，藉由濺鍍，可以有效地防止背板的結構材料混入成膜的薄膜中。According to the present invention, in the split sputtering target obtained by bonding a plurality of target members, it is possible to effectively prevent the structural material of the back sheet from being mixed into the film formed by sputtering.
以下，參考圖面說明有關本發明之實施形態。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
本實施形態的板狀濺鍍靶，如第1圖所示，係在Cu製背板10上，配置複數個靶構件20並經接合者。在此等之靶構件相互之間，形成0.1mm至1.0mm的間隙30。As shown in Fig. 1, the plate-shaped sputtering target of the present embodiment is provided on a back plate 10 made of Cu, and a plurality of target members 20 are placed and joined. A gap 30 of 0.1 mm to 1.0 mm is formed between the target members.
如第2圖所示，在背板10之表面，在相當於靶構件相互間形成的間隙位置，黏貼保護體50。保護體是使用低熔點焊錫或導電性兩面膠帶，而可以黏貼在背板10表面。As shown in Fig. 2, the protective body 50 is adhered to the surface of the backing plate 10 at a position corresponding to a gap formed between the target members. The protective body is made of a low melting point solder or a conductive double-sided tape, and can be adhered to the surface of the back sheet 10.
6片靶構件使用In或Sn的低熔點焊錫，如第1圖所示般配置並接合。此接合係藉由將背板與靶構件同時加熱到預定溫度，在背板表面塗布熔融之低熔點焊錫(In或Sn)，將靶構件配置在該低熔點焊錫上並冷卻到室溫之方式進行。The six target members were made of a low melting point solder of In or Sn, and were placed and joined as shown in Fig. 1. The bonding is performed by applying a molten low melting point solder (In or Sn) to the surface of the backing plate by heating the backing plate and the target member to a predetermined temperature, and arranging the target member on the low melting point solder and cooling to room temperature. get on.
第3圖表示使用單層的保護體之截面概略圖。單層的保護體50，厚度是0.0001mm至1.0mm，以Zn、Ti、Sn之任一金屬箔、含有80質量%以上之Zn、Ti、Sn任何一種以上之合金箔形成。在該單層的保護體50的兩端側，形成存在In的低熔點焊錫60之狀態。Fig. 3 is a schematic cross-sectional view showing a protective body using a single layer. The single-layered protective body 50 has a thickness of 0.0001 mm to 1.0 mm and is formed of any one of Zn, Ti, and Sn, and an alloy foil containing at least 80% by mass of Zn, Ti, or Sn. On the both end sides of the single-layered protective body 50, a state in which the low-melting solder 60 of In is formed is formed.
第4圖表示積層同寬度的帶狀保護構件之二層結構的保護體之截面概略圖。二層結構之保護體50是由第1保護構件51與第2保護構件52所構成。因此，該第1保護構件51與第2保護構件52的寬度，考慮到作業性等而設定為5mm至20mm。又，在該第1保護構件51及第2保護構件52的兩端側，形成存在In的低熔點焊錫60之狀態。Fig. 4 is a schematic cross-sectional view showing a protective body of a two-layer structure in which a strip-shaped protective member having the same width is laminated. The protective body 50 of the two-layer structure is composed of the first protective member 51 and the second protective member 52. Therefore, the width of the first protective member 51 and the second protective member 52 is set to 5 mm to 20 mm in consideration of workability and the like. In addition, in the both ends of the first protective member 51 and the second protective member 52, a low melting point solder 60 having In is formed.
第5圖表示積層不同寬度的保護構件之二層結構的保護體截面概略圖。二層結構的保護體50是由第1保護構件51與第2保護構件52所構成。因此，該第1保護構件51的寬度，考慮到作業性等而設定為5mm至20mm，第2保護構件52的寬度是設定為8mm至30mm，比起第1保護構件，第2保護構件之寬度較寬。因此，藉由在第2保護構件的幾乎中央處配置第1保護構件51，形成在第1保護構件的兩端側露出第2保護構件52之狀態。該露出部分之寬度，在兩端側的各個單側是1.5mm至5mm。又，在第1保護構件51及第2保護構件52之兩端側，形成存有In的低熔點焊錫60之狀態。Fig. 5 is a schematic cross-sectional view showing a protective body of a two-layer structure in which protective members of different widths are laminated. The protective body 50 of the two-layer structure is composed of the first protective member 51 and the second protective member 52. Therefore, the width of the first protective member 51 is set to 5 mm to 20 mm in consideration of workability and the like, and the width of the second protective member 52 is set to 8 mm to 30 mm, and the width of the second protective member is larger than that of the first protective member. It is wider. Therefore, the first protective member 51 is disposed at almost the center of the second protective member, and the second protective member 52 is exposed on both end sides of the first protective member. The width of the exposed portion is 1.5 mm to 5 mm on each of the one sides on both end sides. In addition, a state in which the low melting point solder 60 of In is present is formed on both end sides of the first protective member 51 and the second protective member 52.
第4圖及第5圖所示之第2保護構件52，厚度是0.1mm至0.7mm，以Cu、Al、Ti、Ni、Zn、Cr、Fe的任一金屬箔、含有此等任何一種以上之合金箔所形成。第4圖及第5圖所示之第1保護構件51，厚度是0.0001 mm至0.3mm，係藉由構成靶構件20的元素之一種所成單一金屬、含有在靶構件所含元素之一種以上之合金、或是In2 O3 、ZnO、Al2 O3 、ZrO2 、TiO2 、IZO、IGZO的任何陶瓷材料所形成。The second protective member 52 shown in FIGS. 4 and 5 has a thickness of 0.1 mm to 0.7 mm, and any metal foil of Cu, Al, Ti, Ni, Zn, Cr, and Fe, and any one or more thereof. The alloy foil is formed. The first protective member 51 shown in Figs. 4 and 5 has a thickness of 0.0001 mm to 0.3 mm, and is formed of a single metal constituting one of the elements of the target member 20 and contains at least one element contained in the target member. The alloy is formed of any ceramic material of In 2 O 3 , ZnO, Al 2 O 3 , ZrO 2 , TiO 2 , IZO, IGZO.
第4圖及第5圖所示二層結構之保護體，例如，可以藉由電漿熔射，將Al2 O3 、ZrO2 的陶瓷吹付到0.3mm厚度之Cu箔上而製作。使用市售的氣體電漿熔射裝置，在厚度0.3mm之Cu箔表面上，以平均粒徑200μm的ZrO2 粉末作為原料，可以形成0.0001mm厚的ZrO2 陶瓷層。又，Al2 O3 之情形也可以同樣製作。The protective body of the two-layer structure shown in Figs. 4 and 5 can be produced, for example, by spraying a ceramic of Al 2 O 3 or ZrO 2 onto a Cu foil having a thickness of 0.3 mm by plasma spraying. A ZrO 2 ceramic layer having a thickness of 0.0001 mm can be formed on the surface of a Cu foil having a thickness of 0.3 mm by using a commercially available gas plasma spray device with a ZrO 2 powder having an average particle diameter of 200 μm. Further, the case of Al 2 O 3 can also be produced in the same manner.
第6圖表示使用三列結構的保護體時之截面概略圖。三列結構的保護體50，係由在第1保護構件51的長度方向延伸的兩端邊之兩側，與第2保護構件52並列配置之結構所成。此時，第1保護構件51的寬度，考慮到作業性等而設定為5mm至20mm，第2保護構件52的寬度為3mm至10 mm。如第6圖所示，形成在第1保護構件51的兩端配置第2保護構件，在該第2保護構件52的一端側存在In的低熔點焊錫60之狀態。又，第1保護構件及第2保護構件的厚度是0.0001 mm至1.0mm。Fig. 6 is a schematic cross-sectional view showing a protective body using a three-column structure. The protective body 50 of the three-row structure is formed by a structure in which the second protective members 52 are arranged in parallel on both sides of the both end sides extending in the longitudinal direction of the first protective member 51. At this time, the width of the first protective member 51 is set to 5 mm to 20 mm in consideration of workability and the like, and the width of the second protective member 52 is 3 mm to 10 mm. As shown in FIG. 6, the second protective member is disposed at both ends of the first protective member 51, and the low-melting solder 60 of In is present on one end side of the second protective member 52. Further, the thickness of the first protective member and the second protective member is 0.0001 mm to 1.0 mm.
在第3圖至第6圖中，使用高電阻物質作為保護體的情形，形成藉由高電阻物質形成第3圖的保護體50、第4圖至第6圖中的第1保護構件51。總之，第3圖至第6圖中，在靶構件、背板、低熔點焊錫、保護體(第1保護構件)之中，保護體(第1保護構件)有最大體積電阻值之事變成重點。使用如此高電阻物質的保護體之分割濺鍍靶，在直流濺鍍法、高周波濺鍍法的任一方法中，皆可以發揮效果，尤其在直流濺鍍法中為合適者。In the case of using the high-resistance material as the protective body in FIGS. 3 to 6, the protective body 50 of FIG. 3 and the first protective member 51 of FIGS. 4 to 6 are formed by the high-resistance material. In the third to sixth figures, among the target member, the backing plate, the low melting point solder, and the protective body (the first protective member), the maximum volume resistance value of the protective body (first protective member) becomes a focus. . The split sputtering target using the protective body of such a high-resistance material can exert an effect in any of the DC sputtering method and the high-frequency sputtering method, and is particularly suitable in the DC sputtering method.
以下說明具體之實施例。製成的分割濺鍍靶，係將無氧銅製的背板(寬度30mm、縱630mm、橫710mm)，與6片的IGZO製靶構件(寬度6mm、縱210mm、橫355mm)接合而製成。接合用的低熔點焊錫是使用In。又，靶構件間的間隙是0.5mm。Specific embodiments are described below. The produced split sputtering target was produced by joining a back sheet made of oxygen-free copper (width: 30 mm, length: 630 mm, width: 710 mm) to six IGZO target members (width: 6 mm, length: 210 mm, width: 355 mm). In the low melting point solder for bonding, In is used. Further, the gap between the target members was 0.5 mm.
IGZO製靶構件，係秤量In2 O3 、Ga2 O3 、ZnO的各原料粉末以1mol：1mol：2mol之比率，藉由球磨機研磨20小時混合處理。然後，將稀釋成4質量%之聚乙烯醇水溶液作為黏著劑，以相對於粉總量為8質量%添加並混合後，在500kgf/cm2 之壓力下成型。隨後在大氣中經1450℃、8小時燒成處理而得到板狀的燒結體。然後，將此燒結體藉由平面研削機將兩面研磨，製成厚度6mm、縱210mm、橫355mm的IGZO製靶構件。The IGZO target member was subjected to a mixing treatment of a raw material powder of In 2 O 3 , Ga 2 O 3 , and ZnO at a ratio of 1 mol:1 mol:2 mol by a ball mill for 20 hours. Then, an aqueous solution of polyvinyl alcohol diluted to 4% by mass was added as an adhesive, and after being added and mixed with 8 mass% of the total amount of the powder, it was molded under a pressure of 500 kgf/cm 2 . Subsequently, it was subjected to a firing treatment at 1,450 ° C for 8 hours in the atmosphere to obtain a plate-shaped sintered body. Then, the sintered body was polished on both surfaces by a plane grinder to prepare an IGZO target member having a thickness of 6 mm, a length of 210 mm, and a width of 355 mm.
作為單層的保護體者，係使用厚度0.3mm的Zn、Ti之2種類金屬箔。作為積層不同寬度的保護構件之二層結構的保護體者，係使用將厚度0.3mm、寬度20mm的Cu金屬箔作為第2保護構件，厚度0.1mm、寬度15mm的Zn箔作為第1帶狀保護構件並經積層者。又，另一個的作為積層不同寬度的保護構件之二層結構的保護體者，係使用在厚度0.3mm、寬度20mm的Cu金屬箔之第2帶狀保護構件上，使用原子比為In：Ga：Zn=1：1：1的合金靶，並藉由濺鍍將0.0001mm厚度之IGZ膜(寬度15mm)當作第1保護構件而形成者。再者，作為積層相同寬度之保護構件的二層結構保護體者，係使用將厚度0.3mm、寬度20mm的Cu金屬箔作為第2保護構件，將厚度100μm的ZrO2 當作第1保護構件，藉由濺鍍將第2保護構件的全寬覆蓋者。又，也可以使用以Al2 O3 取代ZrO2 而覆蓋者。As a single-layer protective body, two types of metal foils of Zn and Ti having a thickness of 0.3 mm are used. As a protective body of a two-layer structure in which protective members of different widths are laminated, a Cu metal foil having a thickness of 0.3 mm and a width of 20 mm is used as the second protective member, and a Zn foil having a thickness of 0.1 mm and a width of 15 mm is used as the first strip-shaped protection. The component is also laminated. Further, the other protective body having a two-layer structure in which protective members of different widths are laminated is used on the second strip-shaped protective member of Cu metal foil having a thickness of 0.3 mm and a width of 20 mm, and the atomic ratio is In: Ga. : an alloy target of Zn = 1:1:1, and an IGZ film (width: 15 mm) having a thickness of 0.0001 mm was formed as a first protective member by sputtering. In addition, as a two-layer structure protector in which a protective member having the same width is laminated, a Cu metal foil having a thickness of 0.3 mm and a width of 20 mm is used as the second protective member, and ZrO 2 having a thickness of 100 μm is used as the first protective member. The full width of the second protective member is covered by sputtering. Further, it is also possible to use a substitute of ZrO 2 with Al 2 O 3 to cover it.
製作各分割濺鍍靶後，進行濺鍍評估試驗。此濺鍍評估試驗，係使用濺鍍裝置(SMD-450B、Ulvac公司製)，在無鹼玻璃基板(日本電氣硝子公司製)上形成厚度14μm的IGZO薄膜。然後，對此成膜的基板，切取相當於分割濺鍍靶的間隙部分之直接上部基板、以及間隙部分以外的基板，對切出之基板，藉由原子吸光分析測定IGZO薄膜中Cu之混入量來進行濺鍍評估。結果在表1中表示。又，對在間隙部分未配置保護體的分割濺鍍靶，也同樣進行濺鍍評估試驗作為比對。After each split sputtering target was produced, a sputtering evaluation test was performed. In the sputtering evaluation test, an IGZO film having a thickness of 14 μm was formed on an alkali-free glass substrate (manufactured by Nippon Electric Glass Co., Ltd.) using a sputtering apparatus (SMD-450B, manufactured by Ulvac Co., Ltd.). Then, on the substrate to be formed, a direct upper substrate corresponding to the gap portion of the sputtering target and a substrate other than the gap portion are cut out, and the amount of Cu in the IGZO film is measured by atomic absorption analysis on the cut substrate. To perform the sputtering evaluation. The results are shown in Table 1. Moreover, the sputtering evaluation test was also performed as a comparison for the split sputtering target in which the protective body was not disposed in the gap portion.
如表1所示，設置保護體的情形，對IGZO薄膜之銅的混入量未達2 ppm(原子吸光分析的檢出界限以下)。相對於此，未設置保護體的情形，對IGZO薄膜之銅的混入量在間隙部分為19ppm。As shown in Table 1, in the case where the protective body was provided, the amount of copper mixed into the IGZO thin film was less than 2 ppm (below the detection limit of the atomic absorption analysis). On the other hand, in the case where the protective body was not provided, the amount of copper mixed into the IGZO thin film was 19 ppm in the gap portion.
本發明在使用分割濺鍍靶形成大面積的薄膜之際，可以有效地防止雜質混入成膜之薄膜中。In the present invention, when a large-area film is formed by using a split sputtering target, it is possible to effectively prevent impurities from being mixed into the film formed.
10．．．背板10. . . Backplane
20．．．靶構件20. . . Target member
30．．．間隙30. . . gap
50．．．保護體50. . . Protector
51．．．第1保護構件51. . . First protective member
52．．．第2保護構件52. . . Second protective member
60．．．低熔點焊錫60. . . Low melting point solder
第1圖表示分割濺鍍靶概略斜視圖。Fig. 1 is a schematic perspective view showing a split sputtering target.
第2圖表示本實施形態的背板之概略平面圖。Fig. 2 is a schematic plan view showing a backing plate of the embodiment.
第3圖表示配置單層的保護體之概略截面圖。Fig. 3 is a schematic cross-sectional view showing a protective body in which a single layer is disposed.
第4圖表示配置二層結構的保護體之概略截面圖。Fig. 4 is a schematic cross-sectional view showing a protective body in which a two-layer structure is arranged.
第5圖表示由不同寬度的保護構件配置二層結構的保護體之概略截面圖。Fig. 5 is a schematic cross-sectional view showing a protective body in which a two-layer structure is disposed by protective members of different widths.
第6圖表示配置三列結構的保護體之概略截面圖。Fig. 6 is a schematic cross-sectional view showing a protective body in which three columns of structures are arranged.
10．．．背板10. . . Backplane
20．．．靶構件20. . . Target member
50．．．保護體50. . . Protector
60．．．低熔點焊錫60. . . Low melting point solder
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| JP5759425B2 (en) * | 2012-07-20 | 2015-08-05 | 株式会社神戸製鋼所 | Quality evaluation method of target assembly used for forming thin film for semiconductor layer of thin film transistor |
| JP6079228B2 (en) * | 2012-12-28 | 2017-02-15 | 東ソー株式会社 | Multi-sputtering target and method for manufacturing the same |
| JP6492877B2 (en) * | 2015-03-30 | 2019-04-03 | 東ソー株式会社 | Oxide sintered body and manufacturing method thereof |
| JP2017014562A (en) * | 2015-06-30 | 2017-01-19 | 株式会社コベルコ科研 | Sputtering target assembly |
| CN106711196B (en) * | 2016-10-20 | 2019-11-19 | 浙江大学 | A kind of p-type ZnGeSnO amorphous oxide semiconductor film and preparation method thereof |
| CN110431252A (en) * | 2017-03-31 | 2019-11-08 | 三井金属矿业株式会社 | Divide sputtering target |
| AT16261U1 (en) * | 2018-04-20 | 2019-05-15 | Plansee Se | Composite body and method of making a composite body |
| JP7311290B2 (en) | 2019-03-27 | 2023-07-19 | Ｊｘ金属株式会社 | Segmented sputtering target and manufacturing method thereof |
| WO2020250588A1 (en) * | 2019-06-10 | 2020-12-17 | 株式会社アルバック | Sputtering target and sputtering target manufacturing method |
| JP6942939B2 (en) * | 2019-06-10 | 2021-09-29 | 株式会社アルバック | Sputtering target and manufacturing method of sputtering target |
| WO2021024896A1 (en) * | 2019-08-08 | 2021-02-11 | 三井金属鉱業株式会社 | Divided sputtering target |
| JP6836023B1 (en) * | 2019-11-01 | 2021-02-24 | 三井金属鉱業株式会社 | Gap placement member |
| CN114901857B (en) | 2020-02-06 | 2024-06-25 | 三井金属矿业株式会社 | Sputtering target |
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| JPH10121232A (en) * | 1996-10-14 | 1998-05-12 | Mitsubishi Chem Corp | Sputtering target |
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