TWI849237B - Sputtering target - Google Patents
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- TWI849237B TWI849237B TW109133498A TW109133498A TWI849237B TW I849237 B TWI849237 B TW I849237B TW 109133498 A TW109133498 A TW 109133498A TW 109133498 A TW109133498 A TW 109133498A TW I849237 B TWI849237 B TW I849237B
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000000463 material Substances 0.000 claims abstract description 68
- 230000001681 protective effect Effects 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000470 constituent Substances 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 description 26
- 239000010410 layer Substances 0.000 description 23
- 239000010949 copper Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910010293 ceramic material Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910007541 Zn O Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000002845 discoloration Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
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- 239000011248 coating agent Substances 0.000 description 3
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- 229910052733 gallium Inorganic materials 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019092 Mg-O Inorganic materials 0.000 description 2
- 229910019395 Mg—O Inorganic materials 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910003077 Ti−O Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910014472 Ca—O Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
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- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910009378 Zn Ca Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
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- Physical Vapour Deposition (AREA)
Abstract
Description
本發明是關於一種濺鍍靶,其係具備在相鄰的靶構件之間設置間隙而做配置的構成。 The present invention relates to a sputter plating target having a structure configured by providing a gap between adjacent target components.
所謂濺鍍是薄膜形成技術的一種手法。作為其一例,可舉出以下方法:將Ar(氬)等的惰性氣體導入真空中,並將負的電壓施加在靶構件,使其產生輝光放電(glow discharge),並藉由輝光放電使惰性氣體電漿化且離子化而形成為氣體離子,使該氣體離子以高速與靶構件的表面碰撞,使構成該靶構件的成膜材料的粒子彈出,並使該粒子附著、堆積在要形成薄膜的基材表面,而在基材表面形成緻密且強的薄膜。 Sputtering is a technique of thin film formation technology. As an example, the following method can be cited: an inert gas such as Ar (argon) is introduced into a vacuum, and a negative voltage is applied to the target component to generate a glow discharge, and the inert gas is plasmatized and ionized by the glow discharge to form gas ions, and the gas ions collide with the surface of the target component at high speed, so that particles of the film-forming material constituting the target component are ejected, and the particles are attached and accumulated on the surface of the substrate to form a thin film, thereby forming a dense and strong thin film on the surface of the substrate.
根據這種濺鍍法,除了連高熔點金屬或合金、陶瓷等這種利用真空蒸鍍法等也不易成膜的材料也能成膜之外,還能以高精度形成具有大面積的薄膜,因此大多被用在例如資訊機器、AV機器、家電產品等各種電子零件的製造當中。其中又以利用濺鍍法形成的ITO、IZO、IGZO等的薄膜被廣泛用來作為以液晶顯示器、觸控面板、EL顯示器等為中心的顯示元件的電極。 This sputtering method can form films on materials that are difficult to form films on, such as high-melting-point metals, alloys, and ceramics, using vacuum evaporation methods. It can also form large-area films with high precision, so it is widely used in the manufacture of various electronic parts such as information devices, AV devices, and home appliances. Among them, ITO, IZO, IGZO, and other thin films formed by sputtering are widely used as electrodes for display components centered on liquid crystal displays, touch panels, and EL displays.
近年來,隨著顯示器面板的大型化,而有形成具有大面積的薄膜之需求,因而靶構件也需要大型化。然而,要用大面積構成的一片靶構件來形成 濺鍍時所使用的靶構件相當困難。因此,採用一種將靶構件分割成複數個靶構件,並在基材上將複數個靶構件接合,藉此來作為大面積的濺鍍靶的方法(例如參照專利文獻1)。 In recent years, as display panels have become larger, there is a need to form thin films with large areas, and therefore target components also need to be larger. However, it is difficult to form a target component used for sputtering with a large-area target component. Therefore, a method is adopted in which a target component is divided into a plurality of target components and a plurality of target components are bonded on a substrate to form a large-area sputtering target (for example, refer to patent document 1).
如此,為了避免因為熱膨脹所導致的靶構件的碰撞,被分割成複數個靶構件的靶(也稱為「分割濺鍍靶」)一般是在基材上配置成可在相鄰的靶構件間形成間隙,並且利用In系或Sn系金屬等的熱傳導良好的低熔點銲錫將該基材與各靶構件接合。 In this way, in order to avoid collision of target components due to thermal expansion, a target divided into multiple target components (also called a "divided sputtering target") is generally arranged on a substrate so that a gap can be formed between adjacent target components, and the substrate is bonded to each target component using low-melting-point solder with good thermal conductivity such as In-based or Sn-based metals.
又,這種分割濺鍍靶是在相鄰的靶構件之間設置間隙而配置,因此,在該間隙當中是形成基材露出的狀態,進行濺鍍時,該基材也會被極微量地濺鍍,而有該基材的構成構件混入所要形成的薄膜中的疑慮。因此,有提案是在相鄰的靶構件間的間隙設置保護構件,以避免基材在該間隙當中露出(例如參照專利文獻2、3)。
Furthermore, this split sputtering target is configured by setting a gap between adjacent target components, so the substrate is exposed in the gap. During sputtering, the substrate is also sputtered very slightly, and there is a concern that the components of the substrate are mixed into the thin film to be formed. Therefore, there is a proposal to set a protective component in the gap between adjacent target components to prevent the substrate from being exposed in the gap (for example, refer to
[先行專利文獻] [Prior patent literature]
[專利文獻] [Patent Literature]
專利文獻1:日本特開2005-232580號公報 Patent document 1: Japanese Patent Publication No. 2005-232580
專利文獻2:國際公開第2012/063523號小冊子 Patent document 2: International Publication No. 2012/063523 brochure
專利文獻3:國際公開第2012/063524號小冊子 Patent document 3: International Publication No. 2012/063524
若是磁控濺鍍,由於磁場強度不均一的影響,磁控陰極(cathode)上的離子電流密度的分布並不均一。因此,濺鍍率的分布變得不均一,靶構件的消耗有時會因場所而異。具體而言,在例如平板狀靶構件的情況下,端部的濺鍍率有變高的傾向,因此,有時靶構件的端部的消耗會變得特別快。 In the case of magnetron sputtering, the distribution of ion current density on the magnetron cathode is not uniform due to the influence of the non-uniform magnetic field strength. Therefore, the distribution of sputtering rate becomes non-uniform, and the consumption of the target component sometimes varies from place to place. Specifically, in the case of a flat target component, for example, the sputtering rate at the end tends to be higher, so sometimes the consumption of the end of the target component becomes particularly fast.
因此,以往是如圖6、圖7所示,使端部的靶構件3的厚度比中央部的靶構件3的厚度大,藉此來進行端部的靶構件壽命的延長,以降低靶的更換頻率。而且在該情況,為了使濺鍍面成為平坦狀,一般也會使配置在靶構件3的內面側的基材2的厚度隔著由垂直面構成的段差部2C而有所不同。
Therefore, in the past, as shown in Figures 6 and 7, the thickness of the
然而,在該情況,基材2的該段差部2C是形成經由間隙4而露出的狀態,因此在藉由濺鍍形成薄膜時,產生了該基材2的段差部2C被濺鍍,以致基材2的構成材料(例如Cu等)通過間隙4混入所形成的薄膜中的課題。
However, in this case, the
本發明提供一種新的濺鍍靶,其係具備隔著間隙而相鄰的靶構件的厚度互不相同的構成者,其可防止基材的構成材料混入薄膜中。 The present invention provides a new sputter plating target, which has target components adjacent to each other with a gap and different thicknesses, and can prevent the constituent material of the substrate from being mixed into the film.
本發明提案一種濺鍍靶,其係具備複數個靶構件、及具有段差的基材者,該濺鍍靶具備設置在前述靶構件與前述基材之間的保護構件,且配置在具有段差的基材的段差部分之前述靶構件的厚度互不相同,前述厚度互不相同的靶構件當中,厚度較小者的靶構件的端部具有比前述基材的段差部更突出的部分(將該突出的部分稱為「突出部」)。 The present invention proposes a sputtering target, which has a plurality of target components and a substrate with a step difference. The sputtering target has a protective component disposed between the target component and the substrate, and disposed at the step difference portion of the substrate with a step difference. The target components have different thicknesses, and among the target components with different thicknesses, the end of the target component with a smaller thickness has a portion protruding more than the step difference portion of the substrate (the protruding portion is referred to as a "protruding portion").
本發明所提案的濺鍍靶係藉由使厚度較小者的靶構件,亦即使基材的段差部側的靶構件的端部比起該基材的段差部更為突出,藉此即使該段差部沒有被保護構件覆蓋,也可防止基材的構成材料(例如Cu等)混入薄膜中。 The sputter plating target proposed in the present invention is to make the target member with a smaller thickness, that is, the end of the target member on the step portion side of the substrate protrude more than the step portion of the substrate, thereby preventing the constituent material of the substrate (such as Cu, etc.) from being mixed into the thin film even if the step portion is not covered by the protective member.
1:濺鍍靶 1: Sputtering target
2,2A,2B:基材 2,2A,2B: Base material
2C:段差部 2C: Step difference
3,3A,3B:靶構件 3,3A,3B: Target components
3Aa:突出部 3Aa: protrusion
4:間隙 4: Gap
5:保護構件 5: Protective components
6:接合材 6: Joining materials
7:導熱層 7: Thermal conductive layer
圖1是顯示本發明之濺鍍靶之一例的平面圖。 FIG1 is a plan view showing an example of a sputter plating target of the present invention.
圖2是示意性地顯示出本發明之濺鍍靶之一例的構成例的部分剖面斜視圖。 FIG2 is a partial cross-sectional oblique view schematically showing a configuration example of a sputter plating target of the present invention.
圖3是將圖2的一部份放大後顯示的部分放大剖面圖。 Figure 3 is a partial enlarged cross-sectional view showing a portion of Figure 2.
圖4是示意性地顯示出本發明之濺鍍靶之變形例的部分放大剖面圖。 FIG4 is a partially enlarged cross-sectional view schematically showing a variation of the sputter plating target of the present invention.
圖5是作為本發明之濺鍍靶之一例,顯示出以實施例製作出的濺鍍靶,(A)是其平面圖,(B)是其剖面圖,(C)是將其一部份(以(B)的虛線包圍的部分)放大後的部分放大剖面圖。 FIG5 is an example of a sputtering target of the present invention, showing a sputtering target made in an embodiment, (A) is a plan view thereof, (B) is a cross-sectional view thereof, and (C) is an enlarged cross-sectional view of a portion thereof (the portion surrounded by the dotted line in (B)).
圖6是示意性地顯示出習知的濺鍍靶之一例的構成例的部分剖面斜視圖。 FIG6 is a partial cross-sectional oblique view schematically showing a configuration example of a known sputtering target.
圖7是將圖6的一部份放大後顯示的部分放大剖面圖。 Figure 7 is a partial enlarged cross-sectional view showing a portion of Figure 6.
接下來,根據實施的型態例來說明本發明。然而,本發明並不限定於以下所說明的實施型態。 Next, the present invention is described based on examples of implementation. However, the present invention is not limited to the implementation described below.
〈本濺鍍靶〉 〈Original Splash Plated Target〉
本發明之實施型態之一例的濺鍍靶(稱為「本濺鍍靶」)1是如圖1至圖3所示,在基材2的濺鍍表面側(亦簡稱為「表面側」)設置有複數個靶構件3、3...,在相鄰的靶構件3、3間設有間隙4。該基材2與該靶構件3藉由接合材而接合。
A sputtering target (referred to as "the present sputtering target") 1 of one embodiment of the present invention is as shown in FIGS. 1 to 3. A plurality of
並且,沿著靶構件3、3間的間隙4,在該靶構件3與該基材2之間設置有保護構件5。
Furthermore, a
又,本濺鍍靶1具備:如靶構件3(3A)、3(3A)般,隔著間隙4而相鄰的靶構件的厚度彼此相同的部分;以及如靶構件3(3A)、3(3B)般,隔著間隙4而相鄰的靶構件的厚度互不相同的部分。
Furthermore, the sputtering target 1 has: portions where target members adjacent to each other with a
複數個靶構件3、3...的表面被配置成相同的高度,也就是配置成平坦狀。
The surfaces of the plurality of
本濺鍍靶1呈平板狀。然而,本發明之濺鍍靶的整體形狀可隨意,例如可為圓筒狀。 The sputtering target 1 is in the shape of a flat plate. However, the overall shape of the sputtering target of the present invention can be arbitrary, for example, it can be cylindrical.
在本發明之濺鍍靶呈圓筒狀的情況,例如只要在圓筒狀的基材2的表面側使圓筒狀的複數個靶構件3、3貫穿,並且在相鄰的靶構件3、3間設置間隙4而在圓柱軸方向配置成多段狀即可。又,亦可將朝柱軸方向縱切圓筒後的彎曲狀靶構件3,向著圓筒狀的基材2的外側面在圓周方向並列配置複數個。然而,並不限定於這種構成。
In the case where the sputtering target of the present invention is cylindrical, for example, it is sufficient to penetrate multiple
(相鄰的靶構件3、3的厚度相同的部分的構造)
(Structure of the portions of
相鄰的靶構件3、3的厚度相同的部分,是在基材2的均一的厚度的部分的濺鍍表面側,隔著間隙4配置相鄰的靶構件3(3A)、3(3A),並且沿著該間隙4,在該靶構件3與該基材2之間配置保護構件5,並將該靶構件3與該基材2藉由接合材6而接合。
The
相鄰的靶構件3(3A)、3(3A)間的間隙4的寬度,亦即相鄰的靶構件3A、3A之相對向的前端部間的距離以0.1mm至0.6mm為佳。
The width of the
若該間隙4的寬度在0.1mm以上,可防止靶構件3(3A)、3(3A)因為熱膨脹而碰撞並且破裂,因此較為理想。若距離大於0.6mm,則靶構件無法充分被濺鍍到,在膜特性上會產生異常,因此以0.6mm以下為佳。
If the width of the
從該觀點來看,該間隙4的寬度以0.1mm以上為佳,其中以0.15mm以上,其中又以0.2mm以上更佳。另一方面,以0.6mm以下為佳,其中以0.5mm以下,其中又以0.4mm以下更佳。
From this point of view, the width of the
此外,本濺鍍靶1是如例如圖5所示,只要具備相鄰的靶構件3(3A)、3(3B)的厚度互不相同的部分,並不一定要具備相鄰的靶構件3(3A)、3(3A)的厚度彼此相同的部分。 In addition, the sputtering target 1 is not necessarily required to have portions where the thicknesses of adjacent target components 3 (3A) and 3 (3B) are the same as each other, as long as the adjacent target components 3 (3A) and 3 (3A) have portions where the thicknesses are different from each other, as shown in FIG. 5, for example.
(相鄰的靶構件3、3的厚度互不相同的部分的構造)
(Structure of the portion where the thickness of
另一方面,在相鄰的靶構件3、3的厚度不同的部分是如圖3所示,隔著間隙4而相鄰的靶構件3(3A)、3(3B)的厚度互不相同,並且,這些靶構件3(3A)、3(3B)的內面側的基材2的厚度也會因為隔著段差部2C而不同。亦即,以使相鄰的靶構件3A、3B的濺鍍表面的高度變得相同的方式,使基材2的厚度因為隔著段差部2C而不同。並且,厚度較小者的該靶構件3A被配置成比起該基材2的段差部2C更朝另一方靶構件3B側突出於間隙4內的狀態(將該部分稱為「突出部3Aa」)。
On the other hand, in the portion where the thickness of the
將基材2當中厚度大的部分稱為「基材2A」,將因為隔著段差部2C而厚度小的部分稱為「基材2B」。
The thicker portion of the
亦即,本濺鍍靶1具有因為隔著段差部2C而厚度不同的基材2;以及積層在基材2的表面側的複數個靶構件3、3...。其中的靶構件3A積層在厚度大的基材2A上,該靶構件3A的端部從段差部2C突出而配置。與靶構件3A隔著間隙4而配置的靶構件3B配置成其表面與靶構件3A的表面形成同一高度。
That is, the sputtering target 1 has a
並且,在基材2A的表面,自段差部2C的立起面開始,以從靶構件3A的內面側的端緣橫跨既定寬度之方式配置有保護構件5,而構成為使基材2的表面不會露出。
Furthermore, a
段差部2C的立起面雖然露出,但是靶構件3A的突出部3Aa會發揮屋簷的效果,因此從間隙4侵入的磁控管甚至氣體離子等不容易與該立起面碰撞,段差部2C的該立起面便不容易被濺鍍。
Although the rising surface of the
相鄰的靶構件3、3的厚度不同的部分是如圖2所示,通常設在本濺鍍靶1的端部區域。由於在靶構件的端部區域有濺鍍率變高,靶構件的消耗快的傾向,因此藉由增加端部區域的靶構件的厚度,可延長靶壽命並降低濺鍍靶的更換頻率。
The portion where the thickness of the
然而,設置相鄰的靶構件3、3的厚度不同的部分的場所可為任意者。
However, the location where the portions of the
突出部3Aa的突出幅度x,亦即基材2A的段差部2C與靶構件3A的突出部3Aa的前端部的距離x,又亦即基材2A的段差部2C與間隙4的距離x,以1mm至20mm為佳。
The protrusion width x of the protrusion 3Aa, that is, the distance x between the
該突出的幅度x若為1mm以上,則間隙4的位置就會離開基材2A的段差部2C那麼多,段差部2C就不容易被濺鍍,因此較佳。另一方面,該突出的幅
度x若為20mm以下,則可防止由於突出部3Aa的冷卻效率降低,突出部3Aa因濺鍍而被局部加熱所導致的破裂或電弧等異常的發生,因此較佳。
If the protrusion width x is greater than 1 mm, the position of the
從該觀點來看,該突出的幅度x以1mm以上為佳,其中以3mm以上,其中又以4mm以上,其中又以5mm以上更佳。另一方面,以20mm以下為佳,其中以15mm以下,其中又以12mm以下更佳。 From this point of view, the protruding amplitude x is preferably 1 mm or more, preferably 3 mm or more, preferably 4 mm or more, and preferably 5 mm or more. On the other hand, it is preferably 20 mm or less, preferably 15 mm or less, and preferably 12 mm or less.
突出部3Aa的比段差部2C更突出的幅度x係小於厚度較大者的靶構件3B的端部3Ba與基材2A的段差部2C之間的距離。
The width x of the protrusion 3Aa protruding more than the
又,前述突出部3Aa的突出幅度x以能依基材2當中的段差部2C的高度z來調整為佳,因此以段差部2C的高度z的30至500%為佳,其中以50%以上或400%以下,其中又以100%以上或300%以下更佳。
Furthermore, the protrusion width x of the protrusion 3Aa is preferably adjustable according to the height z of the
相鄰的靶構件3A、3B的間隙4的寬度y,亦即靶構件3A當中的突出部3Aa的端部與靶構件3B的端部3Ba的距離y,以0.1mm至0.6mm為佳。
The width y of the
靶構件3A、3B的間隙4的寬度y若為0.1mm以上,可防止靶構件3A、3B因為熱膨脹而碰撞並破裂,因此較佳。若距離比0.6mm大,靶構件不會被充分濺鍍,在膜特性上會產生異常,因此以0.6mm以下為佳。
If the width y of the
從該觀點來看,靶構件3A、3B的間隙4的寬度y以0.1mm以上為佳,其中以0.15mm以上,其中又以0.2mm以上更佳。另一方面,以0.6mm以下為佳,其中以0.5mm以下,其中又以0.4mm以下更佳。
From this point of view, the width y of the
此外,相鄰的靶構件3、3的厚度互不相同的部分的構造在上述以外的點,與相鄰的靶構件3、3的厚度相同的部分的構造相同。
In addition, the structure of the portion where the thickness of the
靶構件3(包含靶構件3A、3B)的厚度並沒有特別的限定,但通常為2mm至20mm,其中以4mm以上或14以下為佳。
The thickness of the target component 3 (including
(導熱層7) (Thermal conductive layer 7)
再者,較佳為在上述靶構件3A的突出部3Aa的內面至少設置由熱傳導率比該靶構件3A高的材料構成的導熱層7。再者,較佳為突出部3Aa中僅內面形成導熱層7。
Furthermore, it is preferred that at least a heat-conducting layer 7 made of a material having a higher thermal conductivity than the
藉由在突出部3Aa的內面設置由熱傳導率高的材料構成的導熱層7,在進行濺鍍時,可賦予抑制突出部3Aa的溫度上升的冷卻效果,結果,可抑制破裂或電弧的發生,並且抑制突出部3Aa的變色。順帶一提,有溫度上升的可能性者可視為只有突出部3Aa。 By providing a heat-conducting layer 7 made of a material with high thermal conductivity on the inner surface of the protrusion 3Aa, a cooling effect can be provided to suppress the temperature rise of the protrusion 3Aa during sputtering, and as a result, the occurrence of cracks or arcs can be suppressed, and the discoloration of the protrusion 3Aa can be suppressed. By the way, the protrusion 3Aa is considered to be the only part with the possibility of temperature rise.
此時,靶構件3A為陶瓷製的情況,熱傳導率比靶構件3A高的材料可舉出銦、各種金屬、合金等。其中,將基材2與靶構件3接合的接合材6通常會使用銦等熱傳導率高的材料,因此較佳為在突出部3Aa的內面也塗布接合材6來形成由接合材6構成的導熱層7。
At this time, when the
(基材2) (Substrate 2)
基材2可舉出呈板狀或圓筒狀者。然而,並不限定於這些形狀。
The
只要基材2隔著段差部2C具備厚度大的部分(基材2A)及厚度小的部分(基材2B),則可為在厚度方向上由一個構件構成的一體者,亦可為在厚度方向上積層複數個構件來形成段差部2C而成者。
As long as the
例如,可將一個構件的一部份進行切除等,隔著段差部2C來設置厚度大的部分(基材2A)及厚度小的部分(基材2B)。
For example, a portion of a component may be cut off, and a thicker portion (
又,可在一個構件上積層其他構件,隔著段差部2C來設置厚度大的部分(基材2A)及厚度小的部分(基材2B)。
In addition, other components can be stacked on one component to provide a thicker portion (
基材2的厚度沒有特別的限定。
The thickness of the
另一方面,厚度小的部分(基材2B)的厚度最好以靶構件3A、3B的濺鍍面形成相同高度的方式,依這些靶構件3A、3B的厚度來決定。亦即,較佳為靶構件
3A的厚度與基材2A的厚度的合計,與靶構件3B的厚度與基材2的厚度的合計相同。
On the other hand, the thickness of the thinner portion (
基材2的材料只要是Ti、SUS或Cu等的單獨金屬或這些的合金即可。然而,並不限定於這些。
The material of the
〈靶構件3〉
〈
靶構件3可舉出呈板狀或圓筒狀者。然而,並不限定於這些形狀。
The
又,靶構件3A與3B的厚度的差較佳依濺鍍設備的規格來決定。可依因設置在靶內面的磁鐵的磁力分布等而產生的濺鍍率的差來適當選擇,但通常較佳是靶構件3A的30%至100%。該差相對於濺鍍率的差若過小,便無法有效降低更換頻率,若過大,則靶與基板間的距離變小,有時無法得到所希望的膜質。
In addition, the difference in thickness between
靶構件3並不特別限定該材料。例如可舉出包含Cu、Al、In、Sn、Ti、Ba、Ca、Zn、Mg、Ge、Y、La、Al、Si、Ga、W中任一種以上的金屬或氧化物(亦將該氧化物稱為「陶瓷」)。
The
作為前述氧化物,例如可舉出In-Sn-O、In-Ti-O、In-Ga-Zn-O、Ga-Zn-O、In-Zn-O、In-W-O、In-Zn-W-O、Zn-O、Sn-Ba-O、Sn-Zn-O、Sn-Ti-O、Sn-Ca-O、Sn-Mg-O、Zn-Mg-O、Zn-Ge-O、Zn-Ca-O、Zn-Sn-Ge-O、Cu2O、CuAlO2、CuGaO2、CuInO2等。 Examples of the oxide include In-Sn-O, In-Ti-O, In-Ga-Zn-O, Ga-Zn-O, In-Zn-O, In-WO, and In-Zn-WO. , Zn-O, Sn-Ba-O, Sn-Zn-O, Sn-Ti-O, Sn-Ca-O, Sn-Mg-O, Zn-Mg-O, Zn-Ge-O, Zn-Ca -O, Zn-Sn-Ge-O, Cu 2 O, CuAlO 2 , CuGaO 2 , CuInO 2 , etc.
(保護構件5) (Protective component 5)
保護構件5係以下列方式配置:沿著相鄰的靶構件3、3間的間隙4,位於該靶構件3與基材2之間,並且覆蓋在該間隙4當中露出的基材2的表面。
The
由於保護構件5覆蓋露出的基材2的表面,因此在進行濺鍍時,可防止基材2表面在該間隙4當中被濺鍍,以致該基材2的構成材料混入所要形成的薄膜中。
Since the
作為保護構件5的俯視形狀,例如可舉出矩形狀、帶狀、十字帶狀、格子框狀等。然而,並不限定於這些的俯視形狀。
As the top view shape of the
又,保護構件5亦可如圖4所示,作為剖面形狀,以包覆段差部2C的方式呈L字狀。
Furthermore, the
保護構件5的厚度沒有特別的限定。然而,從處理的觀點來看,以100μm以上為佳,其中以200μm以上,其中又以300μm以上更佳。另一方面,從接合層的厚度的觀點來看,以1000μm以下為佳,其中以900μm以下,其中又以800μm以下更佳。
The thickness of the
保護構件5可為單層構造,亦可為在厚度方向上積層了兩層以上而成的多層構造。
The
保護構件5為單層構造時的材料、以及為多層構造時的表面層的材料,較佳為由即使混入所要形成的薄膜也不會造成不良影響的材料,或是可抑制濺鍍現象的材料構成。
The material of the
作為即使混入所要形成的薄膜也不會造成不良影響的材料,例如可使用構成靶構件3之組成的元素的全部或其一部分、包含這些元素的合金或氧化物等。
As a material that will not cause adverse effects even if mixed into the thin film to be formed, for example, all or part of the elements constituting the composition of the
另一方面,作為可抑制濺鍍現象的材料,例如可使用其體積電阻比靶構件3更大的物質,也就是可使用高電阻物質來作為間隙配置構件的材料。使用這種高電阻物質作為間隙配置構件的材料的情況,較佳為高電阻物質的體積電阻率(Ω‧cm)具有靶構件3的體積電阻率的10倍以上的值。
On the other hand, as a material that can suppress the spattering phenomenon, for example, a material having a larger volume resistivity than the
作為保護構件5為單層構造時的材料、以及為多層構造時的表面層的材料的具體例,可舉出構成靶構件3的金屬材料、或是陶瓷材料、或是高分子材料、或是這些的兩種類以上的複合材料。
As specific examples of the material of the
此時,陶瓷材料較佳為與靶構件3相同的組成、或是部分組成由與靶構件3相同的材料構成的陶瓷材料、或是ZrO2、Al2O3等體積電阻高的陶瓷材料。若是體積電阻高的陶瓷材料,可在進行濺鍍時抑制電漿進入分割部分,可有效防止Zr或Al的濺鍍。
At this time, the ceramic material is preferably a ceramic material having the same composition as the
在此,就構成前述靶構件3的金屬材料而言,例如,若靶構件3為IGZO(In-Ga-Zn-O),則只要是In、Zn及Ga中任一種以上的金屬材料即可,若靶構件3為IZO(In-Zn-O),則只要是In或Zn的金屬材料即可。
Here, as for the metal material constituting the
前述陶瓷材料可舉出由包含In、Zn、Al、Ga、Zr、Ti、Sn、Mg中任一種以上的氧化物或氮化物所構成的材料。具體而言,可舉出例如In2O3、ZnO、Al2O3、ZrO2、TiO2、IZO、IGZO等、或是ZrN、TiN、AlN、GaN、ZnN、InN等。 Examples of the ceramic material include materials composed of oxides or nitrides of any one or more of In, Zn, Al, Ga , Zr, Ti, Sn, and Mg. Specifically, examples include In2O3 , ZnO, Al2O3 , ZrO2 , TiO2 , IZO , IGZO, or ZrN, TiN, AlN, GaN, ZnN, InN, and the like.
另一方面,保護構件5為多層構造時的內面層的材料較佳為與基材2的線膨脹率差小、且不易與接合材6(例如In銲錫)反應的材料。
On the other hand, when the
從該觀點來看,可舉出金屬材料或是陶瓷材料、或是這些的複合材料。作為金屬材料,可舉出例如Cu、Al、Ti、Ni、Zn、Cr、Fe中任一者的單金屬或包含這些的任一者的合金。 From this point of view, metal materials or ceramic materials, or composite materials thereof can be cited. As metal materials, for example, single metals such as Cu, Al, Ti, Ni, Zn, Cr, and Fe, or alloys containing any of these can be cited.
又,保護構件5為三層以上的多層構造的情況,較佳為設計成中間層與表面層及內面層的接合性良好,並且構成中間層的材料的線膨脹率成為構成表面層及內面層的材料的線膨脹率的中間值。
Furthermore, when the
(接合材6) (Joint material 6)
基材2與靶構件3、以及基材2與保護構件5係藉由接合材6而彼此接合。
The
接合材6只要是可用來進行這種靶構件3與基材2的接合者,則沒有特別的限定。例如可舉出鍍In、鍍In-Sn、或是在In裡面添加了微量金屬成分的In鍍合金等的銲錫金屬或銲錫合金。
The
〈用途〉 〈Purpose〉
本濺鍍靶例如可適合用來作為要形成氧化物半導體薄膜時的濺鍍靶等。然而,並不限定於該用途。 This sputtering target can be used, for example, as a sputtering target when forming an oxide semiconductor thin film. However, it is not limited to this use.
〈本濺鍍靶之製造〉 〈Manufacturing of this sputtering target〉
在基材2的表面保持既定的間隔而配置複數個保護構件5,並藉由接合材6將兩者接合。
A plurality of
接下來,事先在靶構件3的內面側塗布接合材6,並在保護構件5的表面側,在相鄰的靶構件3、3之間設置間隙而配置複數個靶構件3。此時,只要保護構件5是以沿著間隙4位在靶構件3與基材2之間的方式配置,並藉由接合材6將保護構件5、基材2、靶構件3接合即可。
Next, a
此時,如上所述,較佳為在上述靶構件3A的突出部3Aa的內面也塗布由熱傳導率比靶構件3A高的材料構成的接合材6。
At this time, as described above, it is preferable to also apply a
就接合材6而言,藉由選擇熱傳導率比靶構件3A高的材料,並在突出部3Aa的內面塗布接合材6而設置導熱層7,從而在進行濺鍍時,可賦予抑制突出部3Aa的溫度上升的冷卻效果,結果,可抑制電弧的產生、以及突出部3Aa的變色。
As for the
然而,這種方法僅為本濺鍍靶1的製造方法之一例,並不限定於該方法。 However, this method is only an example of the method for manufacturing the sputtering target 1 and is not limited to this method.
〈語句的說明〉 〈Explanation of Sentences〉
本說明書當中,以「X至Y」(X、Y為任意的數字)表述時,只要沒有特別的說明,即為「X以上Y以下」的意思,並且也包含「較佳為比X大」或「較佳為比Y小」的意思。 In this manual, when "X to Y" (X and Y are arbitrary numbers) is used, unless otherwise specified, it means "above X and below Y", and also includes the meaning of "preferably greater than X" or "preferably less than Y".
又,以「X以上」(X為任意的數字)或「Y以下」(Y為任意的數字)表述時,也包含「較佳為比X大」或「較佳為未滿Y」的意向。 Furthermore, when expressed as "above X" (X is an arbitrary number) or "below Y" (Y is an arbitrary number), it also includes the intention of "preferably greater than X" or "preferably less than Y".
又,以「X≦」(X為任意的數字)或是「Y≧」(Y為任意的數字)表述時,也包含「較佳為X<」或「較佳為Y>」的意向。 Furthermore, when expressed as "X≦" (X is an arbitrary number) or "Y≧" (Y is an arbitrary number), it also includes the intention of "preferably X<" or "preferably Y>".
[實施例] [Implementation example]
以下,根據實施例來說明本發明。然而,本發明並不限定於在此所說明的實施例。 The present invention is described below based on an embodiment. However, the present invention is not limited to the embodiment described here.
〈實施例1〉 <Implementation Example 1>
如圖5所示,隔著間隙4而相鄰的靶構件3A、3B的厚度互不相同,使用隔著段差部2C而厚度不同的基材2,製作出直徑152.4mm的圓盤狀濺鍍靶1。
As shown in FIG5 , the
靶構件3A、3B以如下方式製造。
將原料的In2O3、Ga2O3、ZnO的各原料粉末以1:1:2的mol比進行秤量,並且利用球磨式混合機(ball mill)進行20個小時的混合處理。接下來,將作為黏合劑之稀釋成4質量%的聚乙烯醇水溶液相對於粉總量添加8質量%並加以混合後,以500kgf/cm2的壓力成形成圓板狀。將該成形體在大氣中以1400℃進行燒成處理而獲得圓板狀的燒結體。接下來,利用平面研削機對該燒結體研磨兩面,製造出直徑152.4mm×厚度10mm以及直徑152.4mm×厚度5mm的圓盤加工體。
然後,對準分割位置,將圓盤加工體分別切斷加工成一半,製造出厚度5mm的IGZO製靶構件3A以及厚度10mm的IGZO製靶構件3B。
The raw material powders of In 2 O 3 , Ga 2 O 3 , and ZnO were weighed at a mol ratio of 1:1:2 and mixed for 20 hours using a ball mill. Then, a polyvinyl alcohol aqueous solution diluted to 4 mass % was added as a binder at 8 mass % relative to the total amount of the powder and mixed, and then formed into a disk shape at a pressure of 500 kgf/cm 2. The molded body was sintered at 1400°C in the atmosphere to obtain a disk-shaped sintered body. Next, the sintered body was ground on both sides using a flat grinder to produce a disk-shaped body with a diameter of 152.4 mm × a thickness of 10 mm and a disk-shaped body with a diameter of 152.4 mm × a thickness of 5 mm. Then, the disc processed body is cut into halves respectively while aligning the division position, thereby manufacturing an
準備由無氧銅(Cu)構成,且在中心部設置高度5mm的段差部2C而具備厚度10mm的厚壁部及厚度5mm的薄壁部之直徑180mm的圓板狀的基材,作為基材2。
Prepare a disc-shaped substrate with a diameter of 180 mm, which is made of oxygen-free copper (Cu), has a
使用在厚度0.5mm、寬度20mm的帶狀Cu金屬箔上藉由熱噴塗形成有由厚度100μm的Al2O3構成之層者,作為保護構件5。
As the
在靶構件3A的內面整面,事先塗布由與接合材6相同的材料構成且為低熔點銲錫的In。亦即,在靶構件3A的突出部3Aa的內面形成由In構成的導熱層7。
The entire inner surface of the
接下來,以彼此的濺鍍面形成相同高度,並且在靶構件3A、3B間設置寬度(y)0.5mm的間隙4的方式,在基材2上配置靶構件3A、3B,並且配置成厚度較小者的靶構件3A的端部從基材2的段差部2C突出。此時,配置成突出部3Aa的幅度x,亦即段差部2C與間隙4的距離x係形成為5mm。接下來,利用由低熔點銲錫的In構成的接合材6將靶構件3A、3B與基材2接合而製作出濺鍍靶1(樣本)。
Next, the
〈實施例2〉 <Implementation Example 2>
除了未事先在靶構件3A的突出部3Aa的內面塗布低熔點銲錫的In之外,與實施例1同樣地製作出濺鍍靶1(樣本)。
A sputtering target 1 (sample) was prepared in the same manner as in Example 1, except that low-melting-point solder In was not coated on the inner surface of the protrusion 3Aa of the
〈實施例3〉 <Implementation Example 3>
除了靶構件3A的突出部3Aa的幅度x形成為10mm之外,與實施例1同樣地製作出濺鍍靶1(樣本)。
A sputtering target 1 (sample) was produced in the same manner as in Example 1, except that the width x of the protrusion 3Aa of the
〈實施例4〉 <Implementation Example 4>
除了未事先在靶構件3A的突出部3Aa的內面塗布低熔點銲錫的In之外,與實施例3同樣地製作出濺鍍靶1(樣本)。
A sputtering target 1 (sample) was prepared in the same manner as in Example 3, except that low-melting-point solder In was not applied in advance to the inner surface of the protrusion 3Aa of the
〈實施例5〉 <Implementation Example 5>
除了靶構件3A的突出部3Aa的幅度x形成為20mm之外,與實施例1同樣地製作出濺鍍靶1(樣本)。
A sputtering target 1 (sample) was produced in the same manner as in Example 1, except that the width x of the protrusion 3Aa of the
〈實施例6〉 <Implementation Example 6>
除了未事先在靶構件3A的突出部3Aa的內面塗布低熔點銲錫的In之外,與實施例5同樣地製作出濺鍍靶1(樣本)。
A sputtering target 1 (sample) was prepared in the same manner as in Example 5, except that low-melting-point solder In was not applied in advance to the inner surface of the protrusion 3Aa of the
〈比較例1〉 〈Comparison Example 1〉
除了配置成靶構件3A的端部不從基材2的段差部2C突出,且段差部2C與間隙4的距離x為0mm之外,與實施例1同樣地製作出濺鍍靶(樣本)。
A sputtering target (sample) was prepared in the same manner as in Example 1, except that the end of the
=所製作的濺鍍靶的評價= =Evaluation of the produced sputtering targets=
以如下方式評價在實施例及比較例所製作的濺鍍靶(樣本)。 The sputtering targets (samples) produced in the embodiments and comparative examples were evaluated as follows.
〈濺鍍評價試驗〉 〈Splash plating evaluation test〉
(Cu混入量) (Cu mixing amount)
使用以實施例及比較例製作的濺鍍靶(樣本),以下述條件進行濺鍍,在無鹼玻璃基板(日本電氣硝子公司製)形成厚度14μm的IGZO薄膜,得到有IGZO薄膜的基板。 Using the sputtering targets (samples) prepared in the embodiments and comparative examples, sputtering was performed under the following conditions to form an IGZO thin film with a thickness of 14 μm on an alkali-free glass substrate (manufactured by Nippon Electric Glass Co., Ltd.), thereby obtaining a substrate with an IGZO thin film.
接下來,將該有IGZO薄膜的基板當中相當於濺鍍靶(樣本)的間隙4的該間隙4的正上方部分切出,並藉由原子吸光分析,測定基材的構成原料的Cu在IGZO薄膜中的含量(稱為「Cu混入量」)。
Next, the portion directly above the
(濺鍍條件) (Sputtering conditions)
裝置:DC磁控濺鍍裝置、排氣系低溫泵、轉子泵 Equipment: DC magnetron sputtering device, exhaust system low temperature pump, rotor pump
到達真空度:3×10-6Pa Reached vacuum degree: 3×10 -6 Pa
濺鍍壓力:0.4Pa Sputtering pressure: 0.4Pa
氧分壓:1×10-3Pa Oxygen partial pressure: 1×10 -3 Pa
投入電力消耗量時間:2W/cm2 Power consumption time: 2W/ cm2
時間:10個小時 Time: 10 hours
(電弧評價) (Arc Evaluation)
並且,使用電弧計數器(LANDMARK TECHNOLOGY公司製、型號:μArc Moniter MAM Genesis MAM數據收集器Ver.2.02),測定10個小時所產生的電弧次數,相對於沒有分割的靶當中的電弧次數,比120%少的情況評價為「少」,120%至150%的情況評價為「中」,比150%多的情況評價為「多」。 Furthermore, the number of arcs generated in 10 hours was measured using an arc counter (manufactured by LANDMARK TECHNOLOGY, model: μArc Moniter MAM Genesis MAM data collector Ver.2.02). The number of arcs generated was evaluated as "low" when it was less than 120% of the number of arcs in the undivided target, "medium" when it was between 120% and 150%, and "high" when it was more than 150%.
(突出部的變色評價) (Evaluation of color change of protrusions)
再者,觀察濺鍍後位於侵蝕部的間隙的外觀,評價是否變色成黑色,未變色時評價為「無異常」,變色時評價為「變色」。 Furthermore, the appearance of the gap in the eroded part after sputtering was observed and evaluated to see whether it changed color to black. If it did not change color, it was evaluated as "no abnormality", and if it changed color, it was evaluated as "discoloration".
該變色推測是因為突出部的冷卻趕不急而發生局部溫度上升,結果使得靶材變性而發生。 The discoloration is speculated to be caused by the slow cooling of the protrusions, which results in a local temperature rise, causing the target material to denature.
[表1]
從上述實施例、比較例及至此為止由本發明者所進行的試驗結果可知,在以隔著間隙而相鄰的靶構件的厚度互不相同,並且這些相鄰的靶構件的濺鍍表面的高度成為相同的方式,使這些相鄰的靶構件的內面側的基材的厚度隔著段差部而不同的構造當中,藉由使厚度較小者的靶構件的端部比起該基材的段差部更為突出,則即使該段差部未被保護構件所包覆,也可防止基材的構成材料(例如Cu等)混入薄膜中。 From the above-mentioned embodiments, comparative examples and the test results conducted by the inventors so far, it can be seen that in a structure in which the thicknesses of the substrates on the inner sides of the adjacent target members are different across a gap and the heights of the sputtered surfaces of the adjacent target members are the same, by making the end of the target member with a smaller thickness protrude more than the step portion of the substrate, even if the step portion is not covered by the protective member, the constituent material of the substrate (such as Cu, etc.) can be prevented from being mixed into the film.
又,由於厚度較小者的靶構件當中比基材的段差部更為突出的部分,也就是突出部,其內面沒有接合材與之接觸,因此無法獲得由接合材所帶來的冷卻效果,有可能會發生破裂或電弧。 In addition, since the part of the target component with a smaller thickness that protrudes further than the step portion of the substrate, that is, the protrusion, has no bonding material in contact with its inner surface, it cannot obtain the cooling effect brought by the bonding material, and cracks or arcs may occur.
對此,可知如實施例1、3、5,藉由在突出部的內面塗布與接合材相同的材料而形成導熱層,可獲得冷卻效果,且可抑制電弧的產生。 In this regard, it can be seen that, as in Examples 1, 3, and 5, by coating the inner surface of the protrusion with the same material as the bonding material to form a heat conductive layer, a cooling effect can be obtained and the generation of arcs can be suppressed.
又,也可知藉由在突出部的內面塗布與接合材相同的材料而形成導熱層,可獲得冷卻效果,且可防止變色。 In addition, it is also known that by coating the inner surface of the protrusion with the same material as the bonding material to form a heat conductive layer, a cooling effect can be obtained and discoloration can be prevented.
1:濺鍍靶 1: Sputtering target
2:基材 2: Base material
3,3A,3B:靶構件 3,3A,3B: Target components
4:間隙 4: Gap
5:保護構件 5: Protective components
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WO1997036020A1 (en) * | 1996-03-26 | 1997-10-02 | Technion Research & Development Foundation Limited | Ceramic target for thin film deposition |
JPH10121232A (en) * | 1996-10-14 | 1998-05-12 | Mitsubishi Chem Corp | Sputtering target |
JP2003027227A (en) * | 2001-07-23 | 2003-01-29 | Dainippon Printing Co Ltd | Sputtering target |
WO2012121028A1 (en) * | 2011-03-04 | 2012-09-13 | シャープ株式会社 | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
CN102906301A (en) * | 2010-11-19 | 2013-01-30 | 吉坤日矿日石金属株式会社 | Ito sputtering target |
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WO1997036020A1 (en) * | 1996-03-26 | 1997-10-02 | Technion Research & Development Foundation Limited | Ceramic target for thin film deposition |
JPH10121232A (en) * | 1996-10-14 | 1998-05-12 | Mitsubishi Chem Corp | Sputtering target |
JP2003027227A (en) * | 2001-07-23 | 2003-01-29 | Dainippon Printing Co Ltd | Sputtering target |
CN102906301A (en) * | 2010-11-19 | 2013-01-30 | 吉坤日矿日石金属株式会社 | Ito sputtering target |
WO2012121028A1 (en) * | 2011-03-04 | 2012-09-13 | シャープ株式会社 | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
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