CN102686766B - Divided sputtering target and method for producing same - Google Patents
Divided sputtering target and method for producing same Download PDFInfo
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- CN102686766B CN102686766B CN201180005296.0A CN201180005296A CN102686766B CN 102686766 B CN102686766 B CN 102686766B CN 201180005296 A CN201180005296 A CN 201180005296A CN 102686766 B CN102686766 B CN 102686766B
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005477 sputtering target Methods 0.000 title abstract 3
- 239000000843 powder Substances 0.000 claims abstract description 55
- 239000000919 ceramic Substances 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims description 20
- 238000011049 filling Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 16
- 230000005496 eutectics Effects 0.000 claims description 13
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000011368 organic material Substances 0.000 abstract description 15
- 239000000835 fiber Substances 0.000 abstract description 9
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 4
- 229910010293 ceramic material Inorganic materials 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 26
- 239000010408 film Substances 0.000 description 20
- 239000010949 copper Substances 0.000 description 12
- -1 polyethylene Polymers 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 8
- 239000004698 Polyethylene Substances 0.000 description 6
- 229920000573 polyethylene Polymers 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910007541 Zn O Inorganic materials 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910014472 Ca—O Inorganic materials 0.000 description 2
- 229910019092 Mg-O Inorganic materials 0.000 description 2
- 229910019395 Mg—O Inorganic materials 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 208000004350 Strabismus Diseases 0.000 description 1
- 229910003077 Ti−O Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 238000011284 combination treatment Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- BEOXJJSYIKCCCH-UHFFFAOYSA-N cyanamide;1,3,5-triazine-2,4,6-triamine Chemical compound NC#N.NC1=NC(N)=NC(N)=N1 BEOXJJSYIKCCCH-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
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-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
To provide a divided sputtering target obtained by joining a plurality of target members, whereby it is possible to effectively prevent the contamination of grown thin films by the material constituting a backing plate as a result of sputtering. [Solution] The present invention is a divided sputtering target obtained by joining a plurality of target members on a backing plate by low-temperature soldering, characterized in that ceramic material or organic material is filled into gaps formed between the joined target members. Moreover, the ceramic material should preferably be a ceramic powder or ceramic fibers having the same composition as the target member, and it is preferable that the organic material is a substance with high resistance.
Description
Technical field
The present invention relates to engage the sputter target of cutting apart of many Ge target structure gained, particularly relate to the sputter target of cutting apart that target structure is applicable to when being consisted of oxide semiconductor.
Background technology
In recent years, in the manufacture of each electronic components such as information equipment, AV equipment, family's electrical article, often use sputtering method, in the display unit such as liquid crystal indicator, thin film transistor (is called for short: TFT) etc. semiconductor subassembly is by being formed by sputtering method.This be due to sputtering method as with big area and high precision, form the film that forms transparent electrode layer etc. method for making time be very effective.
In addition, recently in semiconductor subassembly, for take the oxide semiconductor replacement non-crystalline silicon (amorphous silicon) that IGZO (In-Ga-Zn-O) be representative, attracted attention.And relate to this oxide semiconductor, for planning to utilize sputtering method film forming oxide semiconductor thin-film.But the material of the sputter target of the oxide semiconductor that sputter is used is pottery, therefore be difficult to form large area target by a target structure.Therefore, prepare a plurality of oxide semiconductor target members to a certain degree with size, and be engaged in and there is quadratured supporting plate (backing plate) is upper, thereby manufacture large-area oxide semiconductor sputter target.
The supporting plate of this sputter target is used the supporting plate of Cu system conventionally, this supporting plate and target structure engage the eutectic solder that uses thermal conduction good, for example In is metal.For example, when manufacturing the tabular conductor oxidate sputter target of big area, prepare large-area Cu supporting plate processed and divide described supporting plate surface region into a plurality of blocks, and prepare a plurality of oxide semiconductor target members with the area being consistent with described block.Then on supporting plate, configure a plurality of target structures, by In and Sn, be the eutectic solder of metal, and whole target structures are engaged in to supporting plate.During joint, consider thermal expansion poor of Cu and oxide semiconductor, and adjust be configured to make adjacency target structure each other between when room temperature, can produce the gap of 0.1mm to 1.0mm.
Use to engage these a plurality of oxide semiconductor target members and cut apart sputter target, and by sputter and by forming thin film and while forming semiconductor subassembly, need to worry following problem: during sputter is processed, the Cu that belongs to supporting plate constituent material also from the gap between target structure by sputter, and sneak in the film of the oxide semiconductor that will form.Cu mixed volume in film is number ppm degree, but can cause very big impact for oxide semiconductor, the field-effect movability in TFT component characteristic (field-effect mobility) for example, compare with other parts semiconductor subassembly, the tendency that has step-down in the field-effect movability of the formed semiconductor subassembly in the position that is equivalent to the gap between target structure (sneaking into the film of Cu), ON/OFF is than also there being the tendency of reduction.These disappearances are pointed out as a large reason hindering that causes the big area of recently marching toward, and present situation is for requiring proposition technology as quickly as possible to improve.And, even when the problem of this Equal sputter target is the material beyond oxide semiconductor for target structure, also may produce identical disappearance, in order to promote the big area of sputter target, this problem for solving.
[patent documentation 1] TOHKEMY 2005-232580 communique
Summary of the invention
The technical problem > > that < < institute wish solves
The present invention grinds wound person for take described situation as background, its object is for proposing the sputter target of cutting apart described as follows: a kind of large-area sputter target, it can prevent effectively because the sputter target of cutting apart obtaining engaging many Ge target structure is carried out sputter and made the constituent material of supporting plate sneak into the problem in the film of wanting film forming.
The technical scheme > > of < < technical solution problem
In order to solve described problem, the present invention is engaged in a plurality of target structures by eutectic solder the sputter target of cutting apart forming on supporting plate, wherein, between the target structure engaging, in formed gap, is filled with stupalith or organic materials.In the present invention, be filled in the stupalith of this gap or organic materials for being fixed on gap bottom person.
In the present invention, cutting apart sputter target member is object for take tabular, cylindric person.The object of tabular target structure is for planar configuration on tabular supporting plate and engage a plurality of tabular target structure persons with square face.In addition, the object of cylindrical target member is: in cylindric supporting plate, penetrate a plurality of cylindrical target members (hollow circuit cylinder), and it is configured and be engaged in the cylinder axis direction person of cylindric supporting plate with multistage shape; Or the bending target structure that hollow circuit cylinder is formed towards its cylinder axis direction crosscut is arranged a plurality of circumferential directions in cylindric supporting plate outer side and gives bonder.These tabular or cylindric sputter target of cutting apart are for being usually used in large-area sputter target device.In addition, the present invention is for the object that is shaped as tabular, cylindraceous, but be applicable to other shape to cut apart sputter target also harmless, the also shape of unrestricted target structure.In addition, the composition of target structure is the oxide semiconductor such as applicable IGZO and ZTO and transparency electrode (ITO) etc. also, also the composition of unrestricted target structure.
Stupalith of the present invention is preferably the ceramics powder that has same composition with target structure.Its former because: if to have the ceramics powder filling of same composition in gap with target structure, the constituent material that can effectively prevent supporting plate is by sputter, even if produce sputter phenomenon in gap, it is also little for wanting the impact of film of film forming.
Organic materials of the present invention is preferably high resistance material.Its former because: if with the organic materials filling of high resistance material formed gap between the target structure engaging, in the time of can suppressing sputter, in the sputter phenomenon of inside, gap, and can prevent for the detrimentally affect of wanting the film of film forming.For example, being preferably and using body resistivity (volume resistivity) is large material compared with target structure, i.e. the organic materials of high resistance material.The organic materials of these high resistance materials is preferably the body resistivity (Ω ㎝ of high resistance material) be 10 times of above value persons of the body resistivity of target structure.
In the present invention, the method in the gap by organic materials filling between the target structure engaging is for by injecting gap by liquid or gluey organic materials, make thereafter solvent vaporization etc. and it solidified in gap, thereby can be in gap filling organic materials.The body resistance of the organic materials that in addition, the body resistance of described organic materials is solid state.
In addition, organic materials of the present invention can be enumerated: the synthetic resins materials such as phenol resins, trimeric cyanamide (melamine) resin, epoxy resin, urea (urea) resin, vinyl chloride resin, polyethylene, polypropylene; And polyethylene, polyvinyl chloride, polypropylene etc. are general accurate general with plastic material etc. with tree plastic material, Vinyl Acetate Copolymer, ABS resin, AS resin, acrylic resin etc.Can use following person again: the engineering plastics such as polyacetal, polycarbonate, upgrading polyphenylene oxide (PPE), polybutylene terephthalate; And the Super Engineering plastics such as Aromatic polyester, polysulfones, polyphenylene sulfide, polyether-ether-ketone (polyetheretherketone), polyimide resin, fluoro-resin.Especially because thermotolerance, the insulativity of polyimide resin etc. are also high, therefore for being suitable for present inventor.The filling thickness of organic materials is preferably 0.0001mm to 1.0mm.
Stupalith of the present invention adopts while having the ceramics powder of same composition with target structure, and the filling thickness of its ceramics powder is preferably 10 to 70% of formed gap depth between target structure.If do not reach 10% of gap depth, have the tendency that the effect of the sputter that suppresses supporting plate constituent material reduces, if surpass the ceramics powder of 70% filling, can come off, and the reason that particle (particle) produces while becoming sputter.This gap degree of depth is decision maker according to the thickness of the end of the sputter target overall circumference portion of the thickness of target structure end or manufacturing, and gap depth refers to that the manufacture being used in before sputter cuts apart the initial stage gap depth of sputter target.
Adopt the ceramics powder that has a same composition with target structure during as stupalith of the present invention, the pack density that is preferably ceramics powder is 40% to 70%, the median size D of ceramics powder
50be 0.5 μ m to 8.0 μ m.The ceramics powder that is filled in gap for example can be changed its slurry (slurry) and filling, if but the median size D of ceramics powder
50be less than 0.5 μ m, filling slurry while making it dry, curing ceramics powder easily produces be full of cracks and becomes and easily from gap, come off.On the other hand, if the median size D of ceramics powder
50be greater than 8.0 μ m,, after clearance filled slurry and while making it dry, the pack density of ceramics powder has the tendency lower than 40%, and become, easily from gap, comes off.Therefore, if the median size D of ceramics powder
50be 0.5 μ m to 8.0 μ m, can suppress filling coming off in the ceramics powder in gap.In addition, when cutting apart sputter target with manufacture under identical condition by ceramics powder slurry, flowed into container, for example cylindrical vessel of specified shape, and made slurry complete drying, measure its input capacity and weight and can determine the pack density of ceramics powder.The pack density of this ceramics powder is for to be made as 100% by target structure density.
Stupalith of the present invention also can be ceramic fiber.In recent years, supply with and have the yarn (yarn) of aluminum oxide and silicon oxide series as ceramic fiber, also have the very thin person in its fiber footpath.Therefore, by by these ceramic fiber fillings in gap, and can realize the effect identical with described ceramics powder.When the gap, by the ceramic fiber (twisting thread of single line or many fine rules of twisted) with the fiber footpath meeting with gap width is filled in to gap, and can make it be covered in the surface of supporting plate this ceramic fiber filling.In addition, also remaining in gap have eutectic solders such as In that use when supporting plate engages with target structure on a small quantity, can utilize this eutectic solder that ceramic fiber is fixed on bottom gap.Moreover the stupalith in the present invention is also suitable for and is that resin dispersion has pottery (stopping composition) person.
When target structure of the present invention is oxide semiconductor, this oxide semiconductor is preferably by containing In, Zn, any above oxide compound person of one-tenth of Ga.Can enumerate specifically: IGZO (In-Ga-Zn-O), GZO (Ga-Zn-O), IZO (In-Zn-O), ZnO.
In addition,, when target structure of the present invention is oxide semiconductor, this oxide semiconductor is preferably by containing Sn, Ti, Ba, Ca, Zn, Mg, Ge, Y, La, Al, any above oxide compound person of one-tenth of Si, Ga.Can enumerate specifically: Sn-Ba-O, Sn-Zn-O, Sn-Ti-O, Sn-Ca-O, Sn-Mg-O, Zn-Mg-O, Zn-Ge-O, Zn-Ca-O, Zn-Sn-Ge-O, or the Ge of these oxide compounds is changed to the oxide compound of Mg, Y, La, Al, Si, Ga.
Then,, when target structure of the present invention is oxide semiconductor, this oxide semiconductor is preferably by containing Cu, Al, any above oxide compound person of one-tenth of Ga, In.Can enumerate specifically: Cu
2o, CuAlO
2, CuGaO
2, CuInO
2.
The sputter target of cutting apart of the present invention is for the formed clearance filled liquid that has the ceramics powder of same composition with target structure that contains between the target structure in engaging, and after making described liquid dry, by laser or infrared ray radiation in pack portion and by ceramic powder sintering, thereby can realize the sputter target of cutting apart of the present invention.
The liquid that contains ceramics powder of the present invention can be used suitable solvent, and mix predetermined quantities has the ceramics powder of same composition with target structure and make.For example, when target structure is formed by IGZO oxide semiconductor, by the In of predetermined amount
2o
3, Ga
2o
3, each powder raw material of ZnO drops into the polyethylene drum (polypot) of 5L, adds water and dispersion agent (ammonium carboxylate salt), and in polyethylene drum input predetermined amount
the medium of ball (media), is used ball mill (ball mill) to be uniformly mixed 10 hours and can to make liquid with rotating speed 50rpm.For dropping into powder total amount, the ratio of water and dispersion agent is preferably water: dispersion agent is 16 quality %:0.25 quality %, or 17 quality %:0.5 quality %.In addition, powder raw material is preferably and is adjusted to BET value for 3m
2/ g to 20m
2the powder of/g left and right.In addition,, though can directly use powder raw material, also can use and carry out 700 to 1300 ℃ of calcination processors.Use while having carried out the powder raw material of calcination processing, water and dispersion agent are preferably take water and mixes as 10 quality % to 15 quality %, dispersion agent as the ratio of 0.25 quality % to 0.5 quality %.
In the present invention, the liquid that filling contains ceramics powder and make dry after, when pack portion irradiating laser, if for example with wavelength 308nm, frequency 100Hz, pulse width 30ns, energy density 100mJ/cm
2to 1000mJ/cm
2carry out laser radiation, can make filling become sintering state in the most surface side of the ceramics powder in gap.In addition, infrared rays can be clustered in to gap portion and the ceramics powder of heat treated institute filling.
(effect of invention)
According to the present invention, cutting apart in sputter target of a plurality of target structure gained of joint, can effectively prevent because caused the constituent material of supporting plate to sneak into the situation in the film of wanting film forming by sputter.
Accompanying drawing explanation
Fig. 1 is the brief strabismus map of cutting apart sputter target.
The cross section sketch chart that Fig. 2 is this enforcement kenel.
The cross section sketch chart that Fig. 3 is this enforcement kenel.
Primary clustering nomenclature
10 supporting plates
20 target structures
30 gaps
50 eutectic solders
100 ceramics powders (liquid).
Embodiment
Enforcement kenel of the present invention is below described.
In this enforcement kenel, the tabular situation of cutting apart sputter target shown in shop drawings 1 of take is example explanation.As shown in Figure 1, in this enforcement kenel, cut apart sputter target for anaerobic supporting plate 10 made of copper (thickness 10mm, vertical 630mm, wide 710mm) and six IGZO target structures 20 processed (thickness 6mm, indulge 210mm, wide 355mm) are engaged and manufactured.The eutectic solder that engages use is used In.In addition, the gap between target structure 30 is 0.5mm.
IGZO target structure processed is by In
2o
3, Ga
2o
3, each raw material powder of ZnO is with the ratio weighing of 1mol:1mol:2mol, and by ball mill, carries out the combination treatment of 20 hours.Then, by the dilution as cakingagent (binder), be the polyvinyl alcohol water solution of 4 quality %, with the 8 quality % for powder total amount, add after mixing, at 500kgf/cm
2forming under Pressure.Thereafter the calcination of carrying out in atmosphere 1450 ℃, 8 hours is processed, and obtains tabular sintered compact.The two sides of then grinding this sintered compact by face lapping mill, and the IGZO target structure processed of manufacture thickness 6mm, vertical 210mm, wide 355mm.
Use the eutectic solder of In, configure as shown in Figure 1 and engage six target structures making as upper type.This joint carries out in the following way: supporting plate and target structure are heated to 200 ℃ simultaneously, and the eutectic solder (In) in supporting plate surface coated through melting, and target structure is disposed on described eutectic solder, and be cooled to room temperature.In this engages, in the position that is equivalent to formed gap between target structure, insert the distance piece (spacer) of thermotolerance material, to prevent eutectic solder intrusion gap portion.
Then prepare the liquid of IGZO ceramics powder.By In
2o
3(138.8g), Ga
2o
3(93.7g), each powder raw material of ZnO (81.4g) drops into the polyethylene drum of 5L, adds water and dispersion agent (ammonium carboxylate salt), and in polyethylene drum input predetermined amount
the medium of ball, is used ball mill to be uniformly mixed 10 hours and makes liquid.For the powder total amount dropping into, the ratio of water and dispersion agent is preferably water: dispersion agent is 16%:0.25%.The gap 30 of then as shown in Figure 2, using syringe that prepared ceramics powder liquid 100 is injected between target structure.Injection rate is now 50% of target structure thickness.Then, in atmosphere, with 70 ℃ to 120 ℃, carry out drying treatment, and the liquid injecting is dried.
Thereafter as shown in Figure 3, the dry liquid 100 in the gap for position between target structure 30 carries out laser radiation.The illuminate condition of laser is wavelength 308nm, frequency 100Hz, pulse width 30ns, energy density 500mJ/cm
2, and make filling become sintering state in the most surface side of the ceramics powder in gap.After this laser treatment, without observing the situation coming off from cutting apart the ceramics powder of target institute filling.
In addition, the liquid of described ceramics powder is flowed into
cylindrical vessel, and make liquid complete drying, measure its input capacity and weight, and the pack density that can calculate described ceramics powder is 60%.In addition, the median size of ceramics powder is 0.6 μ m.
So, being directed to clearance filled between target structure has the sputter target of cutting apart of ceramics powder to carry out sputter evaluation test.Sputtering apparatus (SMD-450B, ULVAC company system) is used in this sputter evaluation test, and in alkali-free glass substrate, (370mm * 470mm * 0.7mm is thick: NEG company system) the IGZO film of film forming thickness 14 μ m.Sputter condition is Ar 100cc, O
210cc, sputter pressure 0.7Pa, electric power 4.3kW.
Then, for this substrate for film deposition, by be equivalent to cut apart sputter target gap portion directly over the substrate of part and the substrate beyond gap portion cut taking-up.For the cut substrate taking out, by atomic absorption spectrometry (atomic absorption spectroscopy), measure the Cu mixed volume in IGZO film, and carry out sputter evaluation.In addition, for the sputter target of cutting apart that is not filled with ceramics powder at gap portion, also carry out same sputter evaluation test, with as a comparison.
As a result, in the person that is filled with ceramics powder, sneak into Cu mixed volume in IGZO film for not reaching 2ppm (detecting limit of atomic absorption spectrometry is following).To this, in the person that is not filled with ceramics powder, the Cu mixed volume of sneaking in IGZO film is 19ppm.
(utilizability in industry)
The present invention, for using large-arealy when cutting apart sputter target and forming film, can prevent from sneaking in sputter impurity effectively.
Claims (2)
1. cut apart sputter target for one kind, by eutectic solder, a plurality of target structures to be engaged in to the sputter target of cutting apart forming on supporting plate, it is characterized in that, between the target structure engaging, in formed gap, be filled with the stupalith of the ceramics powder that to comprise with target structure be same composition; And
The filling thickness of ceramics powder be between target structure formed gap depth 10% to 70%,
The pack density of ceramics powder is 40% to 70%, the median size D of ceramics powder
50be 0.5 μ m to 8.0 μ m.
2. a manufacture method of cutting apart sputter target, by eutectic solder, a plurality of target structures to be engaged in to the manufacture method of cutting apart sputter target claimed in claim 1 forming on supporting plate, it is characterized in that, in the liquid of the formed clearance filled ceramics powder that to contain with described target structure material be same composition between the target structure engaging and after making described liquid dry, by laser or infrared ray radiation in pack portion and by ceramics powder sintering.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010249779 | 2010-11-08 | ||
| JP2010-249779 | 2010-11-08 | ||
| PCT/JP2011/065950 WO2012063523A1 (en) | 2010-11-08 | 2011-07-13 | Divided sputtering target and method for producing same |
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| Publication Number | Publication Date |
|---|---|
| CN102686766A CN102686766A (en) | 2012-09-19 |
| CN102686766B true CN102686766B (en) | 2014-04-09 |
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| CN201180005296.0A Active CN102686766B (en) | 2010-11-08 | 2011-07-13 | Divided sputtering target and method for producing same |
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|---|---|
| JP (1) | JP4961513B1 (en) |
| KR (1) | KR101191817B1 (en) |
| CN (1) | CN102686766B (en) |
| TW (1) | TWI375728B (en) |
| WO (1) | WO2012063523A1 (en) |
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|---|---|---|---|---|
| US20140110249A1 (en) * | 2011-03-04 | 2014-04-24 | Sharp Kabushiki Kaisha | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
| WO2014131458A1 (en) * | 2013-02-28 | 2014-09-04 | Applied Materials, Inc. | Gapless rotary target and method of manufacturing thereof |
| JP6273734B2 (en) * | 2013-09-20 | 2018-02-07 | 東ソー株式会社 | Flat plate sputtering target and manufacturing method thereof |
| JP6273735B2 (en) * | 2013-09-20 | 2018-02-07 | 東ソー株式会社 | Cylindrical sputtering target and manufacturing method thereof |
| JP7311290B2 (en) | 2019-03-27 | 2023-07-19 | Ｊｘ金属株式会社 | Segmented sputtering target and manufacturing method thereof |
| WO2021024896A1 (en) | 2019-08-08 | 2021-02-11 | 三井金属鉱業株式会社 | Divided sputtering target |
| WO2021157112A1 (en) | 2020-02-06 | 2021-08-12 | 三井金属鉱業株式会社 | Sputtering target |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1062178A (en) * | 1990-11-29 | 1992-06-24 | 中国科学院计算技术研究所 | The adhering method of cathode target of vacuum sputter system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5920470A (en) * | 1982-07-26 | 1984-02-02 | Murata Mfg Co Ltd | Target for sputtering |
| JPH10121232A (en) * | 1996-10-14 | 1998-05-12 | Mitsubishi Chem Corp | Sputtering target |
| JP2005232580A (en) | 2004-02-23 | 2005-09-02 | Toyoshima Seisakusho:Kk | Split sputtering target |
-
2011
- 2011-07-13 WO PCT/JP2011/065950 patent/WO2012063523A1/en active Application Filing
- 2011-07-13 KR KR1020127016052A patent/KR101191817B1/en active IP Right Grant
- 2011-07-13 JP JP2012503150A patent/JP4961513B1/en active Active
- 2011-07-13 CN CN201180005296.0A patent/CN102686766B/en active Active
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1062178A (en) * | 1990-11-29 | 1992-06-24 | 中国科学院计算技术研究所 | The adhering method of cathode target of vacuum sputter system |
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| Publication number | Publication date |
|---|---|
| JPWO2012063523A1 (en) | 2014-05-12 |
| KR101191817B1 (en) | 2012-10-16 |
| JP4961513B1 (en) | 2012-06-27 |
| TW201219589A (en) | 2012-05-16 |
| CN102686766A (en) | 2012-09-19 |
| WO2012063523A1 (en) | 2012-05-18 |
| TWI375728B (en) | 2012-11-01 |
| KR20120086730A (en) | 2012-08-03 |
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