JPS5920470A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPS5920470A JPS5920470A JP13088782A JP13088782A JPS5920470A JP S5920470 A JPS5920470 A JP S5920470A JP 13088782 A JP13088782 A JP 13088782A JP 13088782 A JP13088782 A JP 13088782A JP S5920470 A JPS5920470 A JP S5920470A
- Authority
- JP
- Japan
- Prior art keywords
- target
- ceramic
- sputtering
- pieces
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 27
- 239000000919 ceramic Substances 0.000 claims abstract description 40
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 23
- 239000011787 zinc oxide Substances 0.000 abstract description 12
- 239000000853 adhesive Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 239000011230 binding agent Substances 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 235000011837 pasties Nutrition 0.000 abstract 1
- 239000010408 film Substances 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 244000005687 Poranopsis paniculata Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
Description
【発明の詳細な説明】
この発明は大きな面積のターゲットを得ることのできる
スパッタリング用セラミックターゲットに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ceramic target for sputtering that allows a target with a large area to be obtained.
たとえば、酸化亜鉛からなる誘電体薄膜を形成する方法
として高周波スパッタリング法がある。For example, high frequency sputtering is a method for forming a dielectric thin film made of zinc oxide.
これにはターゲットとして酸化亜鉛のセラミックターゲ
ットが用いられ、通常スパッタリング装置内に被着用基
板と対向させてターゲットホルダーに配置される。A ceramic target of zinc oxide is used as the target, and is usually placed in a target holder in a sputtering apparatus so as to face the target substrate.
一般的にターゲットには一枚のセラミック板が用いられ
るが、処理能力を増やすために大型のスパッタリング装
置を用いる際には大型のターゲットが必要となる。Generally, a single ceramic plate is used as a target, but when using a large sputtering device to increase processing capacity, a large target is required.
従来はセラミック片を複数用意し、これと耐熱性および
耐収縮性を有する接着剤、たとえばアルミナ樹脂を用い
てターゲットホルダーに固定し、大きな面積のターゲッ
トを得ることが提案されている。Conventionally, it has been proposed to prepare a plurality of ceramic pieces and fix them to a target holder using a heat-resistant and shrink-resistant adhesive, such as alumina resin, to obtain a target with a large area.
しかしながら、かかる従来例によるものでは、セラミッ
ク片の間隙に接着剤が現われると、接着剤がスパッタリ
ングされ、スパッタリング生成膜中に不純物が混入する
ことになり、セラミック片を接合する場合に隙間のない
ように十分な注意を払う必要が生じる。However, in such conventional methods, if adhesive appears in the gaps between the ceramic pieces, the adhesive will be sputtered and impurities will be mixed into the sputtering-generated film. It becomes necessary to pay sufficient attention to
したがって、この発明は大きな面積のスパッタリング用
セラミックターゲットを提供することを目的とする。Therefore, it is an object of the present invention to provide a ceramic target for sputtering with a large area.
また、この発明はセラミック片を接合してもスパッタリ
ング膜に不純物の混入を発生させないスパッタリング用
セラミックターゲットを提供することを目的とする。Another object of the present invention is to provide a ceramic target for sputtering that does not cause impurities to be mixed into a sputtered film even when ceramic pieces are bonded together.
すなわち、この発明の要旨とするところは、複数からな
るセラミック片を、該セラミック片と同じ組成系からな
るセラミック材料にて接合したことを特徴とするスパッ
タリング用セラミックターゲットである。That is, the gist of the present invention is a sputtering ceramic target characterized in that a plurality of ceramic pieces are bonded together using a ceramic material having the same composition as the ceramic pieces.
以下この発明を図示した実施例に従って詳細に説明する
。The present invention will be described in detail below according to illustrated embodiments.
第１図はこの発明の一実施例を示す要部概略側面図であ
る。FIG. 1 is a schematic side view of essential parts showing an embodiment of the present invention.
図において、１．２は酸化亜鉛よシなるセラミック片を
示し、このセラミック片１．２は同じ組成系である酸化
亜鉛のセラミック材料３で接合されている。そしてこの
ように複数のセラεツク片１．２からなるターゲット４
は接着剤５によりターゲットホルダー６に固定されてい
る。In the figure, 1.2 indicates a ceramic piece made of zinc oxide, and this ceramic piece 1.2 is joined with a ceramic material 3 of zinc oxide having the same composition. In this way, the target 4 is made up of a plurality of ceramic pieces 1.2.
is fixed to the target holder 6 with an adhesive 5.
酸化亜鉛からなるセラミック片１．２を同じ組成系から
なるセラミック材料３で接合するには、次のような例に
もとづいて実施される。The joining of ceramic pieces 1.2 made of zinc oxide with ceramic material 3 made of the same composition system is carried out based on the following example.
この場合、ターゲットは酸化亜鉛よシなるものであるか
ら、同じ組成系の酸化亜鉛の生原料または仮焼原料を準
備し、たとえばポリビニルアルコールなどのバインダー
とともに混練して適当な粘度のペーストを調整する。こ
のペーストを用いてセラミック片１とセラミック片２と
の接合面に塗布し、そののち乾燥し、さらに１１００〜
１３００Ｃで１０〜６０分間熱処理する。このときペー
スト中のバインダーは熱によシ焼失する。−カ１、−酸
化亜鉛は磁器化するとともに、セラミック片１゜２と同
じ組成系からなるため化学的結合が強くなり、接着強度
の大きいターゲットが得られる。In this case, since the target is something like zinc oxide, a raw raw material or calcined raw material of zinc oxide with the same composition is prepared and mixed with a binder such as polyvinyl alcohol to adjust a paste with an appropriate viscosity. . This paste is applied to the joint surface of ceramic piece 1 and ceramic piece 2, then dried, and further
Heat treatment at 1300C for 10-60 minutes. At this time, the binder in the paste is burned away by heat. -1, -Zinc oxide becomes porcelain and has the same composition as the ceramic piece 1.2, so that the chemical bond becomes strong and a target with high adhesive strength can be obtained.
第２図はこの発明の他の実施例を示す要部概略側面図で
ある。FIG. 2 is a schematic side view of main parts showing another embodiment of the present invention.
この第２図に示しだ例の特徴はセラミック片１とセラミ
ック片２との接合面を斜面状にしたもので、接着の役割
を果たすセラミック材料３の密度がセラミック片１．２
よりも低いとき゛、つまり他の部分よシ早くスパッタリ
ングされるおそれがあるときに有効なものである。なお
、その他の部分は第１図のものと同一であるので、同一
番号を付して説明を省略する。The feature of the example shown in FIG. 2 is that the bonding surface between the ceramic piece 1 and the ceramic piece 2 is sloped, and the density of the ceramic material 3 that plays the role of adhesion is 1.2.
This is effective when the amount of sputtering is lower than 100%, that is, when there is a risk that other parts will be sputtered earlier. Note that other parts are the same as those shown in FIG. 1, so the same numbers are given and explanations are omitted.
第３図は、この発明のさらに他の実施例を示す要部概略
側面図である。FIG. 3 is a schematic side view of main parts showing still another embodiment of the present invention.
この第３図に示した例の特徴はセラミック片１とセラミ
ック片２との接合面を階段状とし、スパッタリングされ
る面に当たる接合部分を密着状にするとともに、反対面
をセラミック材料５で接合したものである。なお、その
他の部分は第１図のものと同一であるので、同一番号を
付して説明を省略する。The feature of the example shown in FIG. 3 is that the bonding surfaces of ceramic piece 1 and ceramic piece 2 are stepped, the bonded portion corresponding to the surface to be sputtered is made into a tight contact, and the opposite surface is bonded with ceramic material 5. It is something. Note that other parts are the same as those shown in FIG. 1, so the same numbers are given and explanations are omitted.
上記した実施例によれば、ターゲットとして酸化亜鉛か
らなるセラミックについて説明したが、そのほかの系か
らなるセラミックターゲットにも応用できることはもち
ろんである。According to the above-described embodiments, a ceramic target made of zinc oxide has been described, but it is of course applicable to ceramic targets made of other systems.
上記した説明から明らかなようにこの発明によれば、複
数のセラミック片を同じ組成系のセラミック材料で接合
したものであるため、大きな面積のターゲットが得られ
るとともに、スパッタリングされてもスパッタリング生
成膜に異物の混入がなく、所定の膜質のものが得られる
。また容易に成形できないターゲット、たとえば球状、
筒状のものでも接合することによって容易に得ることが
でき、しかも大型のプレス機を用いて成形する必要がな
いため、コストの低減化が図れる。As is clear from the above description, according to the present invention, since a plurality of ceramic pieces are bonded with ceramic materials of the same composition, a target with a large area can be obtained, and even when sputtering is performed, the sputtering generated film is not affected. There is no contamination of foreign matter, and a film of the desired quality can be obtained. Also, targets that cannot be easily formed, such as spherical,
Even cylindrical shapes can be easily obtained by joining, and there is no need for molding using a large press machine, so costs can be reduced.
第１図〜第５図はこの発明にがかるスノくツタリング用
セラミックターゲットの一部概略側面図である。
１．２・・・・・・セラミック片、６・・・・・・セラ
ミック材料、４・・・・−・ターゲット、５・・・・−
・接着剤、６・・・・・・ターゲットホルダー。
特許出願人
株式会社 村田製作所
環１図
第２口
第５図
特許庁長官 殿
１、事件の表示
昭和５１年特 許 願第１３０８８７号２、弁明の名称
スパッタリング用ターゲット
３、補正をする者
事件との関係 特許出願人
住所 京都府長岡京市天神二丁目２６番１０号昭和５７
年１０月２６日（発送日）
（２）明細書の「特許請求の範囲」の欄（３）明細書の
「発明の詳細な説明」の欄（４）明細書の「図面の簡単
な説明」の欄７、補正の内容
（１）明細書、第１、発明の名称」の欄「スパッタリン
グ用セラミックターゲット」を「スパッタリング用ター
ゲット」に訂正する。
（２）明細書、第１頁、「特許請求の範囲」の欄別紙の
とおり
（３）明細書、第１頁、第１１行［スパッタリング用セ
ラミックターゲット」を［スパッタリング用ターゲット
］に訂正する。
（４）明細書、第２頁、第１４行〜第１５行「スパッタ
リング用セラミックターゲット」を［スパッタリング用
ターゲット」に訂正する。
（５）明細書、第２頁第１８行〜第１９ｆ１ｒスパッタ
リング用セラミックターゲット」を「スパッタリング用
ターゲット」に訂正する。
（６）明細書、第３頁第４行〜第５行［スパッタリング
用セラミックターゲット］を「スパッタリング用ターゲ
ット」に訂正する。
（７）明細書第６頁第５行〜第６行［スパッタリング用
セラミ゛ツクターゲット」を「スパッタリング用ターゲ
ット」に訂正する。
以上
別 紙
２、特許請求の範囲
複数からなるセラミック片を、該セラミック片と同じ組
成系からなるセラミック材料にて接合したことを特徴と
するスパッタリングＥ１ｉ−ゲット。FIGS. 1 to 5 are partial schematic side views of a ceramic target for snow vine ringing according to the present invention. 1.2...Ceramic piece, 6...Ceramic material, 4...--Target, 5...--
・Adhesive, 6...Target holder. Patent Applicant Murata Manufacturing Co., Ltd. Figure 1 Figure 2 Port 5 Director General of the Patent Office 1, Indication of the case 1976 Patent Application No. 130887 2, Title of defense Sputtering target 3, Person making the amendment Case and Relationship Patent applicant address 2-26-10 Tenjin, Nagaokakyo City, Kyoto Prefecture 1982
October 26, 2019 (shipment date) (2) “Claims” column in the specification (3) “Detailed description of the invention” column in the specification (4) “Brief description of drawings” in the specification Column 7, Contents of Amendment (1) Description, 1st, Title of the Invention, column "Ceramic target for sputtering" is corrected to "Target for sputtering." (2) As shown in the appendix in the "Claims" column on page 1 of the specification, (3) "Ceramic target for sputtering" in line 11 of page 1 of the specification is corrected to "target for sputtering." (4) In the specification, page 2, lines 14 to 15, "ceramic target for sputtering" is corrected to "target for sputtering". (5) In the specification, page 2, lines 18 to 19f1r, "Ceramic target for sputtering" is corrected to "Target for sputtering." (6) In the specification, page 3, lines 4 to 5, [ceramic target for sputtering] is corrected to "target for sputtering." (7) "Ceramic target for sputtering" in lines 5 and 6 of page 6 of the specification is corrected to "target for sputtering." Attachment 2, Claims A sputtering E1i-get characterized in that a plurality of ceramic pieces are joined with a ceramic material having the same composition as the ceramic pieces.
Claims (1)
成系からなるセラミック材料にて接合したことを特徴と
するスパッタリング用セラミックターゲット。A ceramic target for sputtering, characterized in that a plurality of ceramic pieces are bonded together using a ceramic material having the same composition as the ceramic pieces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13088782A JPS5920470A (en) | 1982-07-26 | 1982-07-26 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13088782A JPS5920470A (en) | 1982-07-26 | 1982-07-26 | Target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5920470A true JPS5920470A (en) | 1984-02-02 |
Family
ID=15045018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13088782A Pending JPS5920470A (en) | 1982-07-26 | 1982-07-26 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5920470A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01104770A (en) * | 1987-07-24 | 1989-04-21 | Miba Gleitlager Ag | Arrangement of rod-shaped magnetoelectric pipe or sputter cathode, sputtering method, apparatus for performing said method and tubular target |
| JPH02254164A (en) * | 1989-03-28 | 1990-10-12 | Koujiyundo Kagaku Kenkyusho:Kk | Divided sputtering target |
| JPH0570254U (en) * | 1992-03-06 | 1993-09-24 | 勝 寺島 | flower pot |
| JP2010106330A (en) * | 2008-10-31 | 2010-05-13 | Ulvac Material Kk | Method for manufacturing sputtering target, sputtering target, and sputtering apparatus |
| WO2012063523A1 (en) * | 2010-11-08 | 2012-05-18 | 三井金属鉱業株式会社 | Divided sputtering target and method for producing same |
| US20130081944A1 (en) * | 2011-09-29 | 2013-04-04 | H.C. Starck, Inc. | Large-area sputtering targets |
| WO2014128976A1 (en) * | 2013-02-25 | 2014-08-28 | 三井金属鉱業株式会社 | Sputtering target and manufacturing method therefor |
| WO2014131458A1 (en) * | 2013-02-28 | 2014-09-04 | Applied Materials, Inc. | Gapless rotary target and method of manufacturing thereof |
| US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| JP2015059269A (en) * | 2013-09-20 | 2015-03-30 | 東ソー株式会社 | Cylindrical sputtering target, and production method thereof |
| JP2015059268A (en) * | 2013-09-20 | 2015-03-30 | 東ソー株式会社 | Plate-shaped sputtering target, and production method thereof |
| US9095932B2 (en) | 2006-12-13 | 2015-08-04 | H.C. Starck Inc. | Methods of joining metallic protective layers |
| US9783882B2 (en) | 2007-05-04 | 2017-10-10 | H.C. Starck Inc. | Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom |
| CN112094118A (en) * | 2020-09-30 | 2020-12-18 | 安徽泰龙锌业有限责任公司 | Preparation method of zinc oxide-based ceramic sputtering target material |
-
1982
- 1982-07-26 JP JP13088782A patent/JPS5920470A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01104770A (en) * | 1987-07-24 | 1989-04-21 | Miba Gleitlager Ag | Arrangement of rod-shaped magnetoelectric pipe or sputter cathode, sputtering method, apparatus for performing said method and tubular target |
| JPH02254164A (en) * | 1989-03-28 | 1990-10-12 | Koujiyundo Kagaku Kenkyusho:Kk | Divided sputtering target |
| JPH0570254U (en) * | 1992-03-06 | 1993-09-24 | 勝 寺島 | flower pot |
| US9095932B2 (en) | 2006-12-13 | 2015-08-04 | H.C. Starck Inc. | Methods of joining metallic protective layers |
| US9783882B2 (en) | 2007-05-04 | 2017-10-10 | H.C. Starck Inc. | Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom |
| US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| JP2010106330A (en) * | 2008-10-31 | 2010-05-13 | Ulvac Material Kk | Method for manufacturing sputtering target, sputtering target, and sputtering apparatus |
| WO2012063523A1 (en) * | 2010-11-08 | 2012-05-18 | 三井金属鉱業株式会社 | Divided sputtering target and method for producing same |
| JP4961513B1 (en) * | 2010-11-08 | 2012-06-27 | 三井金属鉱業株式会社 | Split sputtering target and manufacturing method thereof |
| CN102686766A (en) * | 2010-11-08 | 2012-09-19 | 三井金属矿业株式会社 | Divided sputtering target and method for producing same |
| WO2013049274A3 (en) * | 2011-09-29 | 2013-06-06 | H.C. Starck, Inc. | Large -area sputtering targets |
| US9412568B2 (en) * | 2011-09-29 | 2016-08-09 | H.C. Starck, Inc. | Large-area sputtering targets |
| US20130081944A1 (en) * | 2011-09-29 | 2013-04-04 | H.C. Starck, Inc. | Large-area sputtering targets |
| WO2014128976A1 (en) * | 2013-02-25 | 2014-08-28 | 三井金属鉱業株式会社 | Sputtering target and manufacturing method therefor |
| WO2014131458A1 (en) * | 2013-02-28 | 2014-09-04 | Applied Materials, Inc. | Gapless rotary target and method of manufacturing thereof |
| JP2015059269A (en) * | 2013-09-20 | 2015-03-30 | 東ソー株式会社 | Cylindrical sputtering target, and production method thereof |
| JP2015059268A (en) * | 2013-09-20 | 2015-03-30 | 東ソー株式会社 | Plate-shaped sputtering target, and production method thereof |
| CN112094118A (en) * | 2020-09-30 | 2020-12-18 | 安徽泰龙锌业有限责任公司 | Preparation method of zinc oxide-based ceramic sputtering target material |
| CN112094118B (en) * | 2020-09-30 | 2022-10-21 | 安徽泰龙锌业有限责任公司 | Preparation method of zinc oxide-based ceramic sputtering target material |
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