JP2702732B2 - Target for thin film formation - Google Patents
Target for thin film formationInfo
- Publication number
- JP2702732B2 JP2702732B2 JP63077510A JP7751088A JP2702732B2 JP 2702732 B2 JP2702732 B2 JP 2702732B2 JP 63077510 A JP63077510 A JP 63077510A JP 7751088 A JP7751088 A JP 7751088A JP 2702732 B2 JP2702732 B2 JP 2702732B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- target
- sputtering
- film forming
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 35
- 230000015572 biosynthetic process Effects 0.000 title description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 9
- 229910000510 noble metal Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、アルミナ基板、ガラス基板等のセラミック
ス基板へ貴金属等の薄膜をスパッタリングにより形成す
る為のターゲットの改良に関する。The present invention relates to an improvement in a target for forming a thin film of a noble metal or the like on a ceramic substrate such as an alumina substrate or a glass substrate by sputtering.
（従来の技術とその問題点） 従来、アルミナ基板、ガラス基板等のセラミックス基
板へ貴金属の薄膜をスパッタリングにより形成すると、
アルミナ、ガラス等の酸化物と貴金属との結合力が弱い
為、密着力が得られず、単独の貴金属薄膜は容易に剥離
した。(Conventional technology and its problems) Conventionally, when a noble metal thin film is formed on a ceramic substrate such as an alumina substrate or a glass substrate by sputtering,
Since the bonding force between the oxide such as alumina and glass and the noble metal was weak, no adhesion was obtained, and the single noble metal thin film was easily peeled off.
この為、セラミックス基板にクロム、タンタル、モリ
ブデン、チタン等の金属薄膜をスパッタリングにより形
成し、この金属薄膜を中間層にしてその上貴金属薄膜を
スパッタリングにより形成して、該貴金属薄膜の密着力
を増強し、剥離しないようにしている。For this reason, a metal thin film of chromium, tantalum, molybdenum, titanium, etc. is formed on a ceramic substrate by sputtering, and this metal thin film is used as an intermediate layer, and a noble metal thin film is formed thereon by sputtering to enhance the adhesion of the noble metal thin film. And do not peel off.
然し乍ら、薄膜形成時のスパッタリング条件の変動に
より密着力が弱くなったり、ばらつきが生じたりする。
またターゲットを２枚用意し、２回スパッタリングを行
わなければならないので、生産性が悪かった。However, variations in sputtering conditions during the formation of the thin film may weaken the adhesion or cause variations.
Further, two targets must be prepared and sputtering must be performed twice, resulting in poor productivity.
（発明の目的） 本発明は、上記問題点を解決すべくなされたもので、
セラミックス基板へ１回のスパッタリングで密着力の強
い貴金属等の薄膜を形成することのできる薄膜形成用タ
ーゲットを提供することを目的とするものである。(Object of the Invention) The present invention has been made to solve the above problems.
It is an object of the present invention to provide a thin film forming target capable of forming a thin film of a noble metal or the like having a strong adhesive force on a ceramic substrate by one sputtering.
（問題点を解決するための手段） 上記問題点を解決するための本発明の薄膜形成用ター
ゲットは、薄膜形成用ターゲットに、各々1wt％未満の
ビスマス、クロム、アンチモン、バナジウム、ロジウ
ム、チタン、モリブデン、タンタルの少なくとも１種が
添加されていることを特徴とするものである。(Means for Solving the Problems) The thin film forming target of the present invention for solving the above problems has a thin film forming target containing bismuth, chromium, antimony, vanadium, rhodium, titanium each containing less than 1 wt%. It is characterized in that at least one of molybdenum and tantalum is added.
本発明の薄膜形成用ターゲットに於いて、上記添加金
属の各々が1wt％未満と限定されている理由は、1wt％以
上になると、本来のターゲット材料である電気伝導度に
大きく影響を及ぼすからである。In the thin film forming target of the present invention, each of the above-mentioned additional metals is limited to less than 1 wt% because if it is 1 wt% or more, it greatly affects the electrical conductivity which is the original target material. is there.
（作用） 上記成分組成の薄膜形成用ターゲットをスパッタリン
グして、セラミックス基板に薄膜を形成すると、薄膜中
には密着力の向上に効果のあるビスマス、クロム、アン
チモン、バナジウム、ロジウム、チタン、モリブデン、
タンタルが各々1wt％未満でもって少なくとも１種添加
されているので、セラミックス基板より剥離することが
無い。また１枚のターゲットにより１回のスパッタリン
グでセラミックス基板に薄膜を形成できるので、生産性
が向上する。(Function) When a thin film forming target having the above component composition is sputtered to form a thin film on a ceramic substrate, bismuth, chromium, antimony, vanadium, rhodium, titanium, molybdenum, which are effective in improving the adhesion in the thin film,
Since at least one type of tantalum is added at less than 1 wt%, it does not peel off from the ceramic substrate. In addition, since a thin film can be formed on the ceramic substrate by one sputtering using one target, productivity is improved.
（実施例） 本発明の薄膜形成用ターゲットの一実施例を説明する
と、金に、重量％でビスマス0.82％、ロジウム0.33％、
バナジウム0.27％、アンチモン0.16％、クロム0.12％添
加して焼結、圧縮成形又は溶解鋳造により薄膜形成用タ
ーゲットを作った。(Example) One embodiment of the thin film forming target of the present invention will be described. Gold is bismuth 0.82%, rhodium 0.33%,
A target for forming a thin film was prepared by adding 0.27% of vanadium, 0.16% of antimony, and 0.12% of chromium and sintering, compression molding or melting casting.
次に他の実施例について説明すると、銅にモリブデン
1wt％添加して、焼結、圧縮成形又は溶解鋳造により薄
膜形成用ターゲットとなした。Next, another embodiment will be described.
1 wt% was added to obtain a thin film forming target by sintering, compression molding or melting casting.
然して上記２種の本発明の薄膜形成用ターゲットと、
従来の金99.99wt％単独、銅99.99wt％単独の薄膜形成用
ターゲットを夫々用いて、石英ガラス基板にスパッタリ
ングにより厚み１μｍの薄膜を形成した。Therefore, the above two types of thin film forming targets of the present invention,
A thin film having a thickness of 1 μm was formed on a quartz glass substrate by sputtering using a conventional thin film forming target of 99.99 wt% of gold alone and 99.99 wt% of copper alone.
そしてこれら石英ガラス基板上の薄膜に、セロテープ
を貼付してテープピールテストを行った処、従来例の２
種の薄膜形成用ターゲットにより石英ガラス基板に形成
した薄膜は簡単に剥離したが、実施例の２種の薄膜形成
用ターゲットにより石英基板に形成した薄膜は容易に剥
離しなかった。特に500℃〜800℃、10分間熱処理した後
は、全く剥離しなかった。Then, a cellophane tape was stuck to the thin film on the quartz glass substrate, and a tape peel test was performed.
The thin film formed on the quartz glass substrate by the thin film forming targets was easily peeled off, but the thin film formed on the quartz substrate by the two thin film forming targets of the examples was not easily peeled off. In particular, after heat treatment at 500 ° C. to 800 ° C. for 10 minutes, no peeling occurred.
（発明の効果） 以上の説明で判るように本発明の薄膜形成用ターゲッ
トは、密着力向上に効果のあるビスマス、クロム、アン
チモン、バナジウム、ロジウム、チタン、モリブデン、
タンタルが各々1wt％未満でもって少なくとも１種添加
されているので、スパッタリングによりセラミックス基
板に薄膜に形成すると強固に接合されて剥離することが
無い。また１枚の薄膜形成用ターゲットにより１回のス
パッタリングでセラミックス基板に薄膜を形成できるの
で、生産性が向上する。(Effect of the Invention) As can be seen from the above description, the target for forming a thin film of the present invention has a good effect of improving the adhesion, such as bismuth, chromium, antimony, vanadium, rhodium, titanium, molybdenum,
Since at least one type of tantalum is added at less than 1 wt% each, when formed into a thin film on a ceramics substrate by sputtering, it is strongly bonded and does not peel off. Further, since a thin film can be formed on the ceramics substrate by one sputtering using one thin film forming target, productivity is improved.
Claims (1)
のビスマス、クロム、アンチモン、バナジウム、ロジウ
ム、チタン、モリブデン、タンタルの少なくとも１種が
添加されていることを特徴とする薄膜形成用ターゲッ
ト。1. A thin film forming target characterized in that at least one of bismuth, chromium, antimony, vanadium, rhodium, titanium, molybdenum, and tantalum is added to the thin film forming target in an amount of less than 1 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63077510A JP2702732B2 (en) | 1988-03-30 | 1988-03-30 | Target for thin film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63077510A JP2702732B2 (en) | 1988-03-30 | 1988-03-30 | Target for thin film formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01248448A JPH01248448A (en) | 1989-10-04 |
| JP2702732B2 true JP2702732B2 (en) | 1998-01-26 |
Family
ID=13635962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63077510A Expired - Lifetime JP2702732B2 (en) | 1988-03-30 | 1988-03-30 | Target for thin film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2702732B2 (en) |
-
1988
- 1988-03-30 JP JP63077510A patent/JP2702732B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01248448A (en) | 1989-10-04 |
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