JPH01249296A - Paste for brazing - Google Patents
Paste for brazingInfo
- Publication number
- JPH01249296A JPH01249296A JP7676088A JP7676088A JPH01249296A JP H01249296 A JPH01249296 A JP H01249296A JP 7676088 A JP7676088 A JP 7676088A JP 7676088 A JP7676088 A JP 7676088A JP H01249296 A JPH01249296 A JP H01249296A
- Authority
- JP
- Japan
- Prior art keywords
- brazing
- powder
- stainless steel
- paste
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005219 brazing Methods 0.000 title claims abstract description 41
- 239000000843 powder Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010936 titanium Substances 0.000 claims abstract description 16
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 16
- 239000010935 stainless steel Substances 0.000 claims abstract description 15
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 15
- 239000011230 binding agent Substances 0.000 claims abstract description 8
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 3
- 229910000679 solder Inorganic materials 0.000 claims description 21
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 2
- 229910000833 kovar Inorganic materials 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052863 mullite Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 19
- 239000000758 substrate Substances 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 12
- 229910052709 silver Inorganic materials 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 239000000945 filler Substances 0.000 abstract 2
- 238000005304 joining Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract 1
- 239000011147 inorganic material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 239000011104 metalized film Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910017309 Mo—Mn Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 Ti and Zr and Nl Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、セラミックと金属、セラミック同志をろう付
け接着できるろう付けペーストに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a brazing paste that can braze and bond ceramics and metals, and ceramics together.
従来の技術
従来、セラミックと金属の接着は、例えば、高塩治男、
エレクトロニク・セラミクス、１９７３年１２月号、３
０−３７頁に示されるように、Ｍｕ−Ｍｎ法、活性金属
法などがある。Conventional technology Conventionally, bonding of ceramic and metal has been carried out by, for example, Haruo Takashio,
Electronic Ceramics, December 1973 issue, 3
As shown on pages 0-37, there are the Mu-Mn method, the active metal method, and the like.
発明が解決しようとする課題
前記従来例に示されているように、Ｍｏ−Ｍｎ法は、加
湿水素中で１３００〜１７００°Ｃの高温でＭ ｏ −
Ｍ ｎメタライズをセラミック表面に形成して、そのメ
タライズ膜と金属を銀ろう付けする方法である。しかし
、この方法は以下で述べる理由により薄膜サーミスタ素
子のような耐熱性の低いセラミック素子と金属のろう付
けに不適である。薄膜サーミスタ素子はアルミナ基板の
一方の表面に電極膜と感温抵抗体膜を形成して構成され
る。このため、アルミナ基板の一方の表面に電極膜と感
温抵抗体膜を形成した後、アルミナ基板の他の表面にメ
タライズ膜を形成する場合、薄膜サーミスタ素子の耐熱
性が９００°Ｃ以下、好ましくは、ＳＯＯ００以下であ
るので、Ｍ ｏ −Ｍ ｎ法は使用出来ないという欠点
があった。他方、アルミナ基板の他の表面にメタライズ
膜を先に形成した後、電極膜と感温抵抗体膜をアルミナ
基板の一方の表面に形成する場合、電極膜は通常空気中
など酸化性雰囲気中で高温中で焼き付けて形成され、こ
のときにメタライズ膜が酸化されるので、ろう付けでき
なくなる。Problems to be Solved by the Invention As shown in the above-mentioned conventional example, the Mo-Mn method is capable of reducing Mo-Mn in humidified hydrogen at a high temperature of 1300 to 1700°C.
This is a method in which Mn metallization is formed on the ceramic surface and the metallized film and metal are soldered with silver. However, this method is unsuitable for brazing a metal with a ceramic element having low heat resistance, such as a thin film thermistor element, for the reasons described below. A thin film thermistor element is constructed by forming an electrode film and a temperature-sensitive resistor film on one surface of an alumina substrate. For this reason, when forming an electrode film and a temperature-sensitive resistor film on one surface of an alumina substrate and then forming a metallized film on the other surface of the alumina substrate, it is preferable that the heat resistance of the thin film thermistor element be 900°C or less. is less than SOO00, which has the disadvantage that the M o -M n method cannot be used. On the other hand, when forming an electrode film and a temperature-sensitive resistor film on one surface of the alumina substrate after first forming a metallized film on the other surface of the alumina substrate, the electrode film is usually formed in an oxidizing atmosphere such as air. It is formed by baking at a high temperature, and the metallized film is oxidized at this time, making it impossible to braze.
また、活性金属法は、活性金属であるＴｉ、Ｚｒなどと
、これと比較的低融点の合金を作るＮｌ。In addition, the active metal method uses active metals such as Ti and Zr and Nl, which forms an alloy with a relatively low melting point.
Ｃｕ、Ａｇとを、共晶組成になるようにセラミックと金
属の間に挿入し、真空中または不活性ガス中で加熱する
方法である。しかし、この方法も、９００°Ｃ以上の高
温を必要とするので、前記と同じ理由により、薄膜サー
ミスタ素子を金属にろう付け接着するのに不適切であっ
た。This is a method in which Cu and Ag are inserted between ceramic and metal so that they have a eutectic composition, and then heated in vacuum or in an inert gas. However, since this method also requires a high temperature of 900° C. or higher, it is not suitable for brazing and bonding a thin film thermistor element to metal for the same reason as mentioned above.
課題を解決するための手段
前記課題を解決するための技術的手段は、チタニウム粉
末、銀ろう粉末、有機バインダ、有機溶剤および直径３
０μｍ以上の球形の金属粉末または無機物粉末とからな
るろう付けペーストを用いる点にある。Means for Solving the Problem The technical means for solving the problem are titanium powder, silver solder powder, organic binder, organic solvent and diameter 3
The point is that a brazing paste made of spherical metal powder or inorganic powder of 0 μm or more is used.
作 用
本発明のろう付けペーストを、印刷法などにより、セラ
ミックの表面上に所定の形状に塗布、乾燥した後、接着
すべきセラミックまたは金属とろつ付けペーストの塗布
されたセラミックとを積層し、真空中もしくは不活性ガ
ス中で加熱処理して、両者がろう付けされる。この加熱
処理のとき、本発明のろう付けペーストは上述したよう
に、銀ろう粉末とチタニウム粉末を含むので、ＳＯＯ°
Ｃ以下の温度で銀ろう粉末が融解して液相になる。他方
、液相銀ろうと接する固相のチタニウムの一部は液相銀
ろう中を拡散して、セラミック表面に化学的に吸着し、
セラミックとチタニウムが接着する。更に、吸着チタニ
ウムと銀ろうが金属結合で接着する。このような過程を
経て、セラミックと金属が接着されるので、加熱温度は
ｓｏｏ’ｃ以下の低温で十分である。更に、セラミック
と金属のろう付け接続の場合、両者の熱膨張係数は、通
常、一致しないので、熱応力を緩和してクラックの発生
を防止するためにろう材層の厚さはある一定以上必要で
ある。本発明のろう付けペーストは直径３０／１ｍ以上
の球形の金属粉末または無機物粉末を含むので、ろう材
層の厚さは３０ｔｚｒｎ以上に保持され、クラックの発
生が防止される。Function The brazing paste of the present invention is applied to the surface of a ceramic in a predetermined shape by a printing method or the like, and after drying, the ceramic or metal to be bonded and the ceramic coated with the brazing paste are laminated, Both are brazed by heat treatment in vacuum or inert gas. During this heat treatment, the brazing paste of the present invention contains silver solder powder and titanium powder as described above, so SOO°
Silver solder powder melts into a liquid phase at a temperature below C. On the other hand, some of the solid titanium in contact with the liquid silver solder diffuses through the liquid silver solder and is chemically adsorbed onto the ceramic surface.
Ceramic and titanium bond together. Furthermore, the adsorbed titanium and silver solder are bonded together by a metallic bond. Since the ceramic and metal are bonded through such a process, a low heating temperature of soo'c or lower is sufficient. Furthermore, in the case of a brazed connection between ceramic and metal, the thermal expansion coefficients of the two usually do not match, so the thickness of the brazing material layer must be at least a certain level in order to alleviate thermal stress and prevent the occurrence of cracks. It is. Since the brazing paste of the present invention contains spherical metal powder or inorganic powder with a diameter of 30/1 m or more, the thickness of the brazing material layer is maintained at 30 tzrn or more, thereby preventing the occurrence of cracks.
実施例
図は本発明の一実施＠＋を示するう付け部所面図である
。アルミナ基板１の他の表面に、チタニウム粉末、銀ろ
う粉末、有機バインダ、有機溶剤および直径３０μｍ以
上の球形の金属粉末または無機物粉末とからなるろう付
けペーストを印刷し、約１００°Ｃで１０〜２０分間空
気中乾燥して、ろう材層２を形成した。次に、ステンレ
ス板３にろう材層２が接するように、ステンレス板３と
アルミナ基板１を積層し、この積層物を２ Ｘ ｔ Ｏ
ｔｏｒｒ以下の真空中で約８００°Ｃに１〜２分間加熱
した後、室温に冷却した。この結果、アルミナ基板１は
ステンレス板３にろう材層２により強固に接着された。The embodiment diagram is a top view of a mounting part showing one implementation of the present invention. A brazing paste consisting of titanium powder, silver solder powder, organic binder, organic solvent, and spherical metal powder or inorganic powder with a diameter of 30 μm or more is printed on the other surface of the alumina substrate 1, and heated at about 100°C for 10 to 30 minutes. A brazing material layer 2 was formed by drying in the air for 20 minutes. Next, the stainless steel plate 3 and the alumina substrate 1 are laminated so that the brazing metal layer 2 is in contact with the stainless steel plate 3, and this laminated body is
After heating to about 800°C for 1-2 minutes in a vacuum below torr, it was cooled to room temperature. As a result, the alumina substrate 1 was firmly adhered to the stainless steel plate 3 by the brazing material layer 2.
もちろん、有機バインダ、有機溶剤は、空気中乾燥、真
空中加熱の際に蒸発するので、有機バインダ、有機溶剤
は真空中加熱後ろう材層２中に含まれず、ろう材層２は
チタニウム粒子２１、銀ろう２２および球形の金属粉末
２３または無機物粉末２３とで構成される。尚、真空中
加熱のほかにも、窒素中、アルゴン中など不活性ガス中
の加熱によっても同様のろう付けが得られた。このよう
に、本発明のろう付けペーストは８００’Ｃ以下でのろ
う付けができるので、アルミナ基板１の他の表面に電極
膜１１および感温抵抗体膜１２を形成した薄膜サーミス
タ素子を容易に金属にろう付け接続できる。即ち、薄膜
サーミスタの耐熱性は構成材料により異なるが、Ａ ｕ
−Ｐ を厚膜電極膜１１とｓ＋ｃ％温抵抗体膜１２を
用いた高耐熱性薄膜サーミスタでも９００’Ｃ以下、好
ましくは８０００Ｃ以下であり、この温度以上の高温に
さらされると、抵抗値が大きく増大して、実用に供する
ことができない。Of course, since the organic binder and organic solvent evaporate during drying in air and heating in vacuum, the organic binder and organic solvent are not included in the brazing material layer 2 after heating in vacuum, and the brazing material layer 2 is made up of titanium particles 21. , silver solder 22 and spherical metal powder 23 or inorganic powder 23. In addition to heating in vacuum, similar brazing was also obtained by heating in an inert gas such as nitrogen or argon. As described above, since the brazing paste of the present invention can be brazed at temperatures below 800'C, it is possible to easily form a thin film thermistor element in which the electrode film 11 and the temperature sensitive resistor film 12 are formed on the other surface of the alumina substrate 1. Can be connected to metal by brazing. That is, the heat resistance of a thin film thermistor varies depending on the constituent material, but A u
Even in a highly heat-resistant thin film thermistor using the thick film electrode film 11 and the s+c% temperature resistor film 12, -P is below 900'C, preferably below 8000C, and when exposed to high temperatures above this temperature, the resistance value decreases. The amount increases so much that it cannot be put to practical use.
また、ろう材層２の厚さは金属粉末２３または無機物粉
末２３の直径によってほぼ決まるので、３０μｍ以上で
ある。金属粉末２３または無機物粉末２３を添加しない
場合、ろう付け後、アルミナ基板１にクラックが発生し
易いが、添加した場合、クランク発生は皆無であった。Further, the thickness of the brazing material layer 2 is approximately determined by the diameter of the metal powder 23 or the inorganic powder 23, and is therefore 30 μm or more. When the metal powder 23 or the inorganic powder 23 was not added, cracks were likely to occur in the alumina substrate 1 after brazing, but when the metal powder 23 or the inorganic powder 23 was added, there were no cracks.
このように本発明のろう付けペーストはろう材層２の厚
さを３０ｚ１ｍ以上に制御できるので、熱応力によるク
ラックの発生を防止できる。As described above, the brazing paste of the present invention allows the thickness of the brazing material layer 2 to be controlled to 30 mm or more, thereby preventing the occurrence of cracks due to thermal stress.
ろう付け後、ろう付け部の断面に沿って組成分析したと
ころアルミナ基板１の表面およびステンレス板３の表面
からチタニウムが検出された。また、同時にチタニウム
粒子２１は粒子状で、銀ろう２２は融解した状態で、金
属粉末２３または無機物粉末２３は球形で、それぞれ観
察された。このことから真空加熱中に融解した液層銀ろ
うと接する固相のチタニウムの一部は液相銀ろう中を拡
散して、アルミナ基板１の表面およびステンレス板３の
表面に化学的に吸着し、アルミナ基板１とチタニウムお
よびステンレス板３とチタニウムが接着し、更に、吸着
チタニウムと銀ろうが金属結合で接着する、と解される
。After brazing, titanium was detected on the surface of the alumina substrate 1 and the stainless steel plate 3 when the composition was analyzed along the cross section of the brazed portion. At the same time, the titanium particles 21 were observed to be particulate, the silver solder 22 to be molten, and the metal powder 23 or inorganic powder 23 to be spherical. From this, some of the solid phase titanium that comes into contact with the liquid silver solder melted during vacuum heating diffuses through the liquid silver solder and is chemically adsorbed onto the surface of the alumina substrate 1 and the stainless steel plate 3. It is understood that the alumina substrate 1 and titanium and the stainless steel plate 3 and titanium are bonded, and furthermore, the adsorbed titanium and silver solder are bonded by metal bonding.
金属粉末２３として、チタニウム、ステンレス、コバー
ル合金が優れている。これは、これら金属がろう付け時
の温度で溶解せず、また被接着セラミックの熱膨張係数
と同程度の比較的小さな熱膨張係数を有するからである
。無機物粉末２３として、アルミナ、酸化ジルコニウム
、チタニア、ムライト、酸化マグネシウムが優れている
。これは、これら無機物がろう付け時の温度で溶解せず
、また被接着セラミックの熱膨張係数と同程度の熱膨張
係数を選べるからである。As the metal powder 23, titanium, stainless steel, and Kovar alloy are excellent. This is because these metals do not melt at brazing temperatures and have a relatively small coefficient of thermal expansion comparable to that of the ceramic to be bonded. As the inorganic powder 23, alumina, zirconium oxide, titania, mullite, and magnesium oxide are excellent. This is because these inorganic substances do not melt at the temperature during brazing, and the coefficient of thermal expansion can be selected to be comparable to the coefficient of thermal expansion of the ceramic to be bonded.
銀ろうの材質として種々の添加物を加えた組成が知られ
ているが、銀と銅からなる共晶銀ろうが望ましい。共晶
銀ろうは真空中加熱でも不活性ガス中加熱でも使用でき
るが、亜鉛、カドミウムなどの添加物を加えた銀ろうは
不活性ガス中加熱で使用出来るが、真空中加熱では使用
できないからである。これは亜鉛、カドミウムなどの添
加物が真空中加熱により蒸発して、組成変化生じること
に因る。なお、上記説明ではアルミナ基板１とステンレ
ス板３のろう付について説明したが、セラミンク同志の
ろう付についても同様である。Although compositions of silver solder containing various additives are known, eutectic silver solder consisting of silver and copper is preferred. Eutectic silver solder can be heated in a vacuum or in an inert gas, but silver solder with additives such as zinc and cadmium can be used in an inert gas, but cannot be used in a vacuum. be. This is because additives such as zinc and cadmium evaporate due to heating in vacuum, resulting in a change in composition. Note that although the above explanation has been about brazing the alumina substrate 1 and the stainless steel plate 3, the same applies to brazing the ceramic plates together.
発明の効果。Effect of the invention.
以上述べて来たように、本発明によれば次に示ず効果が
得られる。As described above, according to the present invention, the following effects can be obtained.
１ 本発明のろう付けペーストはセラミックなどに容易
に印刷でき、乾燥後、金属などと積層したものを加熱す
るだけでろう付けが出来るので、作業性に優れる。1. The brazing paste of the present invention can be easily printed on ceramics and the like, and after drying, it can be laminated with a metal or the like and brazed by simply heating it, so it has excellent workability.
■ 低融点の銀ろうを用いているので、８０００Ｃ以下
の低温度でろう付け出来る。■ Since it uses silver solder with a low melting point, it can be brazed at a low temperature of 8000C or less.
１［［ろう付け層の厚さは球形の金属粉末または無機物
粉末の直径により３０ｔｉｍ以上に制御できるので、熱
応力によるクラック発生を防止できる。1 [[Since the thickness of the brazing layer can be controlled to 30 tim or more depending on the diameter of the spherical metal powder or inorganic powder, cracks caused by thermal stress can be prevented.
図は本発明の一実施例を示するう付け部所面図である。
１・・・・アルミナ基、１１・・・・・電極膜、１２・
・・・感温抵抗体膜、２・・・・・・ろう材層、２１・
・・・・チタニウム粒子、２２・・・・融解した銀ろう
、２３・−・・・・金属粉末または無機物粉末、３・・
・・・ステンレス板。
／−一一アλシミナ鳳版
ｚ−３う着Ｉ
Ｇ〜 ステンレス板
２１− チタニウム部子
魚襟瞥紛未The figure is a top view of a mounting portion showing an embodiment of the present invention. 1... Alumina group, 11... Electrode film, 12...
... Temperature-sensitive resistor film, 2 ... Brazing material layer, 21.
... Titanium particles, 22 ... Melted silver solder, 23 ... Metal powder or inorganic powder, 3 ...
...Stainless steel plate. /-11A λ Shimina Otori version z-3 wear I G~ Stainless steel plate 21- Titanium part baby fish erabe mismatched
Claims (4)
機溶剤および直径３０μｍ以上の球形の金属粉末または
無機物粉末とからなるろう付けペースト。(1) A brazing paste consisting of titanium powder, silver solder powder, an organic binder, an organic solvent, and a spherical metal powder or inorganic powder with a diameter of 30 μm or more.
ール合金の群から選ばれた一つである請求項１記載のろ
う付けペースト。(2) The brazing paste according to claim 1, wherein the spherical metal powder is one selected from the group of titanium, stainless steel, and Kovar alloy.
、チタニア、ムライト、酸化マグネシウムの群から選ば
れた一つである請求項１記載のろう付けペースト。(3) The brazing paste according to claim 1, wherein the spherical inorganic powder is one selected from the group of alumina, zirconium oxide, titania, mullite, and magnesium oxide.
のろう付けペースト。(4) The brazing paste according to claim 1, wherein the silver solder powder is a eutectic silver solder powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7676088A JPH0657622B2 (en) | 1988-03-30 | 1988-03-30 | Brazing paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7676088A JPH0657622B2 (en) | 1988-03-30 | 1988-03-30 | Brazing paste |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01249296A true JPH01249296A (en) | 1989-10-04 |
| JPH0657622B2 JPH0657622B2 (en) | 1994-08-03 |
Family
ID=13614546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7676088A Expired - Lifetime JPH0657622B2 (en) | 1988-03-30 | 1988-03-30 | Brazing paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0657622B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0639563A (en) * | 1991-03-20 | 1994-02-15 | Nippon Steel Corp | Joined body of ceramics and metal |
| US6390354B1 (en) | 1998-02-18 | 2002-05-21 | Ngk Insulators, Ltd. | Adhesive composition for bonding different kinds of members |
| JP2008208013A (en) * | 2007-02-28 | 2008-09-11 | Dowa Metaltech Kk | Metal/ceramic binding substrate and brazing filler metal for use therein |
| JP2012058414A (en) * | 2010-09-07 | 2012-03-22 | Sharp Corp | Manufacturing method of fixing heater, fixing heater, fixing device, and image forming apparatus |
| CN102528198A (en) * | 2011-12-07 | 2012-07-04 | 北京工业大学 | Method for manufacturing wear-resistant composite steel plate by vacuum brazing |
| JP2012515266A (en) * | 2009-01-14 | 2012-07-05 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Sintered material, sintered joint and method for producing sintered joint |
| JP2017016976A (en) * | 2015-07-06 | 2017-01-19 | 日本特殊陶業株式会社 | Ceramic heater and sensor |
-
1988
- 1988-03-30 JP JP7676088A patent/JPH0657622B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0639563A (en) * | 1991-03-20 | 1994-02-15 | Nippon Steel Corp | Joined body of ceramics and metal |
| US6390354B1 (en) | 1998-02-18 | 2002-05-21 | Ngk Insulators, Ltd. | Adhesive composition for bonding different kinds of members |
| US6742700B2 (en) | 1998-02-18 | 2004-06-01 | Ngk Insulators, Ltd. | Adhesive composition for bonding different kinds of members |
| JP2008208013A (en) * | 2007-02-28 | 2008-09-11 | Dowa Metaltech Kk | Metal/ceramic binding substrate and brazing filler metal for use therein |
| JP2012515266A (en) * | 2009-01-14 | 2012-07-05 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Sintered material, sintered joint and method for producing sintered joint |
| JP2012058414A (en) * | 2010-09-07 | 2012-03-22 | Sharp Corp | Manufacturing method of fixing heater, fixing heater, fixing device, and image forming apparatus |
| CN102528198A (en) * | 2011-12-07 | 2012-07-04 | 北京工业大学 | Method for manufacturing wear-resistant composite steel plate by vacuum brazing |
| JP2017016976A (en) * | 2015-07-06 | 2017-01-19 | 日本特殊陶業株式会社 | Ceramic heater and sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0657622B2 (en) | 1994-08-03 |
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