JPS60231474A - Method of soldering ceramic and metal - Google Patents

Method of soldering ceramic and metal

Info

Publication number
JPS60231474A
JPS60231474A JP8643684A JP8643684A JPS60231474A JP S60231474 A JPS60231474 A JP S60231474A JP 8643684 A JP8643684 A JP 8643684A JP 8643684 A JP8643684 A JP 8643684A JP S60231474 A JPS60231474 A JP S60231474A
Authority
JP
Japan
Prior art keywords
metal
brazing
base material
ceramic
active metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8643684A
Other languages
Japanese (ja)
Inventor
一志 山本
彪 長井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8643684A priority Critical patent/JPS60231474A/en
Publication of JPS60231474A publication Critical patent/JPS60231474A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はセラミックと金属など異種材料の鑞付に関する
ものであり、さらに詳しくは、エレクトロンクスなどに
用いられる電子部品のセラミック基材と保護容器などの
金蝿基拐を、不活性な雰囲気下において鑞付接合する方
法に関するものである。
[Detailed Description of the Invention] Industrial Application Field The present invention relates to brazing of dissimilar materials such as ceramic and metal, and more specifically, the brazing of ceramic substrates and protective containers of electronic components used in electronics, etc. The present invention relates to a method of brazing and joining metal bases under an inert atmosphere.

従来例の構成とその問題点 従来この種の鑞付方法の代表例として、第1図に示す様
な、高温用の電子部品の接合がある。これは、数100
度の高温下で使用されるサーミスタのヘッド部の接合構
成であり、同図においてセラミック基材1の略平滑主面
と金属基材2の間には、活性金属3とm4付金属4から
なる接合層を介して鑞付接合されている。セラミック基
材1は、サーミスタ素子部で、成分中にS i O2を
有したアルミナムライト、マグネシアなどの寸法が約6
×2朋、厚さ0.5mmからなる基板で、接合部の反対
側路平滑主面にはSiCなどを薄膜化形成した感温抵抗
体膜11及び電極12が構成されている。
Structure of the conventional example and its problems A typical example of this type of brazing method is the joining of high-temperature electronic parts as shown in FIG. This is number 100
This is the bonding configuration of the head part of a thermistor used at high temperatures of 30 to 30 degrees. In the figure, between the substantially smooth main surface of the ceramic base material 1 and the metal base material 2, there is an active metal 3 and a metal 4 with m4 attached. They are joined by brazing through a joining layer. The ceramic base material 1 is a thermistor element part and is made of aluminumite, magnesia, etc. having SiO2 in its components and has a size of about 6 mm.
The substrate has a size of 2×2 mm and a thickness of 0.5 mm, and a temperature-sensitive resistor film 11 made of a thin film of SiC or the like and an electrode 12 are formed on the smooth main surface on the opposite side of the joint.

鑞付後は、電極12を介して制御回路などへのリード線
5が接続される。金属基材2は素子部を保護するための
保護容器で、約0.5111111位のステンレス材な
どが用いられる。
After brazing, the lead wire 5 is connected to a control circuit or the like via the electrode 12. The metal base material 2 is a protective container for protecting the element portion, and is made of a stainless steel material of about 0.5111111 or the like.

また、鑞付は第2図に示した様に、セラミック基材1の
セラミック面と金属基材2の間に、Ti、Zr などか
らなる厚さ約1朋でセラミック基材1とほぼ同寸法の活
性金属3薄板と、銀あるいは銅を主成分とした厚さ約5
0μm以下でセラミック基材1とは゛ぽ同寸法の鑞材金
属4を、積層した状態で真空炉(図面省略)を用いた不
活性雰囲気下で、鑞材金属4の溶融点以上の温度まで加
温されおこなわれる。しかし、この方法では、鑞材基材
(活性金属3や鍾、材金属4)を、それぞれ積層するだ
め鑞付接合時に、接合位置がズレ易い(第3図参照)こ
とや、セツティング時間を長く要すなど問題があり、こ
れらの点を防ぐ方法として、活性金属3に鑞材金属4を
真空蒸着し、これら鑞付基材を一体化することがなされ
ていた。これは、第4図に示すように、前記と同じ活性
金属31の薄板に、予じめ前記と同じ鑞材金属41を真
空蒸着により、薄膜化形成し、前記従来例と同じ方法で
真空鑞付をする方法である。
In addition, as shown in Fig. 2, the brazing is performed between the ceramic surface of the ceramic base material 1 and the metal base material 2 with a thickness of approximately 1 mm made of Ti, Zr, etc., and approximately the same size as the ceramic base material 1. active metal 3 thin plates and a thickness of approximately 5 mm mainly composed of silver or copper.
The brazing metal 4 having the same dimensions as the ceramic substrate 1 and having a diameter of 0 μm or less is heated in a stacked state to a temperature equal to or higher than the melting point of the brazing metal 4 in a vacuum furnace (not shown) in an inert atmosphere. It is heated and performed. However, in this method, since the solder base materials (active metal 3, ferrule, and raw metal 4) are laminated, the joining positions are likely to shift during soldering (see Figure 3), and the setting time is long. There are problems such as the long time it takes, and as a method to prevent these problems, the solder metal 4 is vacuum-deposited on the active metal 3 and these brazing base materials are integrated. As shown in FIG. 4, the same solder metal 41 as described above is formed into a thin film by vacuum evaporation on a thin plate of the same active metal 31 as described above, and then vacuum soldered in the same manner as in the conventional example. This is a method of attaching.

これらの方法で鑞付接合された、セラミック基材1の接
合界面付近は、セラミック表面内部(深さ約〜10 l
im 、)に、5i02の酸素分子と活性金属3のTi
、 Zrとが相互に拡散反応しだTi01あるいはZr
O2等の中間層を形成し、強固な接合を可能にしている
ことが確認されている。
The area near the bonding interface of the ceramic substrate 1 that has been brazed and bonded using these methods is inside the ceramic surface (about 10 liters in depth).
im , ), 5i02 oxygen molecules and active metal 3 Ti
, Zr and Ti01 undergo a mutual diffusion reaction.
It has been confirmed that an intermediate layer such as O2 is formed to enable strong bonding.

この様にして、セラミック基材1と金属基材2からなる
前記サーミスタなどの鑞付け、なされていた。
In this manner, the thermistor and the like made of the ceramic base material 1 and the metal base material 2 were brazed.

この方法で前者は、前述したようにセラミック基材と金
属基材との間に、活性金属や鑞材金属の薄板を積層化し
、真空炉中備付をするため、薄板などが所定位置からズ
レ易い欠点があった。まだ後者の活性金属表面に鋼材金
属を真空蒸着により薄膜化形成する方法は、鑞付基材を
一体型にすることができ、前者の欠点を防止する効果は
あったが、真空蒸着で薄膜化形成をするだめ、釧材金属
に合金を用いた場合、合金成分中の融点の低い金属から
蒸着され始め、蒸着膜(鑞材金属)は、組成ズレを起こ
す。組成ズレの生じた鑞材金属は、組成ズレに比例して
融点が変動する。その結果として、真空鑞付中の温度制
御が不安定になる欠点があった。
In the former method, as mentioned above, a thin plate of active metal or brazing metal is laminated between a ceramic base material and a metal base material, and the thin plate is placed in a vacuum furnace, so the thin plate etc. is likely to shift from its designated position. There were drawbacks. The latter method of forming a thin film of steel metal on the active metal surface by vacuum evaporation can make the brazing base material integral, and has the effect of preventing the disadvantages of the former. When an alloy is used as the filler metal for formation, the metal with the lower melting point in the alloy components begins to be vapor deposited, causing a compositional deviation in the deposited film (solder metal). The melting point of a brazing metal with a compositional deviation varies in proportion to the compositional deviation. As a result, there was a drawback that temperature control during vacuum brazing became unstable.

発明の目的 本発明は、かかる従来の欠点を除去するもので、セラミ
ック基材と金属基材とを鑞付する方法において、合金か
らなる鑞材金属の組成ズレを無くし、かつ接合部の位置
ズレが極めて少ない、鑞付方法を提供することを目的と
する。
OBJECTS OF THE INVENTION The present invention aims to eliminate such conventional drawbacks, and in a method of brazing a ceramic base material and a metal base material, it eliminates the compositional deviation of the solder metal made of an alloy, and also eliminates the positional deviation of the joint part. It is an object of the present invention to provide a brazing method in which the amount of brazing is extremely small.

発明の構成 この目的を達成するために本発明は、セラミック基材と
金属基材と鑞付基材とからなり、鑞付基材には、活性金
属の表面に合金組成を有す鑞材金属をスパッタ法により
薄膜化形成した構成を設け、この鑞付基材を介17て、
前記の両基材を不活性雰囲気中で真空鑞付したものであ
る。
Structure of the Invention To achieve this object, the present invention consists of a ceramic base material, a metal base material and a brazing base material, the brazing base material having a brazing metal having an alloy composition on the surface of the active metal. A structure is provided in which a thin film is formed using a sputtering method, and through this brazing base material 17,
Both of the base materials described above were vacuum brazed in an inert atmosphere.

この構成によって、合金からなる鑞材金属の組成ずれを
抑えかつ、鑞(2金属は活性金属表面に薄膜形成された
一体型と成るだめ、接合部の位置ズレ電極めて少なくす
ることができるものである。
This structure suppresses the compositional deviation of the solder metal made of an alloy, and since the solder (the two metals are integrated with a thin film formed on the surface of the active metal), it is possible to minimize misalignment of electric current at the joint. be.

実施例の説明 以下、本発明の一実施例を第4図を用いて説明する。尚
、図において、従来と同じものについては、同一番号を
付している。
DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. In the drawings, the same numbers as in the prior art are given to the same parts.

第4図において、セラミック基材1はサーミスタ素子部
で、金属基材2は素子部を保護する保護容器で、これら
は従来例の構成と同様のものを選んだ。前記両者を接合
するだめの鑞付基材は、活性金属31に厚さ約50μm
でセラミック基材1とほぼ同形状のT1薄板で、その表
面には銀−銅を主成分とした鋼材金属42(共品点約7
80°C)を、予じめ、スパッタ法により薄膜化形成し
たものである。膜厚は10μm以下であった。この様に
構成された鑞付基材を、セラミック基材1と金属基材2
の間に挿入し、各々が同方向に位置する様にセツティン
グをして、真空炉を用い真空炉中4 鑞付(真空度5X10 Torr、加温850°C×5
分)をおこなった。鑞付接合後に、前述の従来列と同じ
方法で、第1図に示した様にリード線5の接続がおこな
われる。
In FIG. 4, the ceramic base material 1 is a thermistor element part, and the metal base material 2 is a protective container for protecting the element part, and these were chosen to have the same structure as the conventional example. The brazing base material for joining the two has a thickness of about 50 μm on the active metal 31.
It is a T1 thin plate with almost the same shape as the ceramic base material 1, and its surface has a steel metal 42 mainly composed of silver-copper (about 7 points of common material).
80° C.) was previously formed into a thin film by sputtering. The film thickness was 10 μm or less. The brazing base materials configured in this way are a ceramic base material 1 and a metal base material 2.
Insert them between them, set them so that they are positioned in the same direction, and braze them in a vacuum furnace (vacuum 5 x 10 Torr, heating 850°C x 5).
minutes). After the brazed connection, the connections of the leads 5 are made as shown in FIG. 1 in the same manner as in the conventional series described above.

この方法によれば、スパッタ法を用い、合金組成を有す
鑞材金属42を、活性金属310表面に薄膜化形成する
ため、薄膜化形成された鑞材金属42膜の組成ズレは殆
んど発生しない。また、鑞付基材(活性金属31、鑞付
金属42)は、薄膜化形成により、一体型構成になるだ
め、鑞付基材の積層化が不要となり、結果として、接合
時の位置ズレ防止やセツティングの簡素化などができる
According to this method, a sputtering method is used to form a thin film of the brazing metal 42 having an alloy composition on the surface of the active metal 310, so there is almost no deviation in the composition of the thin film of the brazing metal 42 formed. Does not occur. In addition, the brazing base material (active metal 31, brazing metal 42) is formed into a thin film and has an integrated structure, which eliminates the need for lamination of the brazing base material, and as a result, prevents misalignment during bonding. and simplify settings.

なお、セラミック基板1の接合部は、TiOなとの中間
層が確認され、従来の正常な接合と同様、機械的強度も
安定したものであった。
It should be noted that an intermediate layer of TiO was confirmed at the bonded portion of the ceramic substrate 1, and the mechanical strength was stable, similar to normal bonding in the past.

次に、活性金属31にZr薄板(寸法はTiと同じ)を
選び、前記実施例と同じ方法で鑞材金属42をスパッタ
法で薄膜化形成し、さらに真空炉中鑞付をおこなった。
Next, a thin Zr plate (having the same dimensions as Ti) was selected as the active metal 31, and a solder metal 42 was formed into a thin film by sputtering in the same manner as in the previous embodiment, and further brazing was performed in a vacuum furnace.

その結果、前記実施例とほぼ同等の結果であった。As a result, the results were almost the same as those in the above example.

発明の効果 以上のように、本発明のセラミックと金属の鑞付方法に
よれば、スパッタ法を用い、合金組成を有す鑞材金属を
、活性金属の表面に薄膜化形成するため、膜形成された
鑞材金属の組成ズレは殆んど無く、結果として鑞付時の
温度制御が安定化できる効果がある。また、鑞付基材(
活性金属、鑞材金属)は一体型のため、前述の様な鑞付
基材の積層化による、接合部の位置ズレやセツティング
の簡素化などの問題は防ぐことができる。
Effects of the Invention As described above, according to the ceramic-to-metal brazing method of the present invention, a sputtering method is used to form a thin film of a brazing metal having an alloy composition on the surface of an active metal. There is almost no deviation in the composition of the solder metal, which has the effect of stabilizing temperature control during brazing. In addition, the brazing base material (
Since the active metal and the brazing metal are integrated, it is possible to prevent problems such as misalignment of the joint and simplification of setting due to the lamination of the brazing base materials as described above.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はセラミックと金属の鑞付の代表夕1」を示す断
面図、第2図は従来の鑞付方法を示す断面図、第3図は
従来例の問題点を説明する平面図、第4図は従来のもう
一方の鑞付方法ならびに、本発明方法の一実施例を説明
する断面図である。 1・・・・・・セラミック基材、2・・・・・・金属基
材、31・・・・・・活性金属、42・・・・・・鑞材
金属、5・・・・・・リード線、11・・・・・感温抵
抗体膜、12・・・・・・電極。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 第2図 第3図 /1 第4図 4ノ(42)
Fig. 1 is a cross-sectional view showing a typical example of brazing ceramics and metals, Fig. 2 is a cross-sectional view showing a conventional brazing method, Fig. 3 is a plan view explaining the problems of the conventional method, and Fig. FIG. 4 is a sectional view illustrating another conventional brazing method and an embodiment of the method of the present invention. 1...Ceramic base material, 2...Metal base material, 31...Active metal, 42...Brazing metal, 5... Lead wire, 11... Temperature sensitive resistor membrane, 12... Electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3/1 Figure 4 4 (42)

Claims (3)

【特許請求の範囲】[Claims] (1)セラミック基材と金属基材と鑞付基材とからなり
、前記鑞付基材は、活性金属の表面に合金組成を有す鑞
材金属をスパッタ法で薄膜化形成した構成からなり、こ
の鑞付基材を介して、前記の両基材を不活性雰囲気中で
真空鑞付するセラミックと金属の鑞付方法。
(1) Consists of a ceramic base material, a metal base material, and a brazing base material, and the brazing base material is composed of a thin film formed by sputtering a brazing metal having an alloy composition on the surface of an active metal. . A ceramic-to-metal brazing method in which both of the base materials are vacuum brazed in an inert atmosphere via this brazing base material.
(2)セラミック基材は、成分中にSiC2を含む組成
からなる特許請求の範囲第1項記載のセラミックと金属
の鑞付方法。
(2) A method for brazing ceramic and metal according to claim 1, wherein the ceramic base material has a composition containing SiC2 in its components.
(3)活性金属は、Ti、Zr、などの金属材料からな
る特許請求の範囲第1項記載のセラミックと金属の鑞付
方法。 (4鑞材金属は、組成が銀と銅の合金からなる特許請求
の範囲第1項記載のセラミックと金属の鑞伺方法。
(3) The ceramic-to-metal brazing method according to claim 1, wherein the active metal is a metal material such as Ti or Zr. (4) The method for brazing ceramics and metals according to claim 1, wherein the brazing metal has a composition of an alloy of silver and copper.
JP8643684A 1984-04-27 1984-04-27 Method of soldering ceramic and metal Pending JPS60231474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8643684A JPS60231474A (en) 1984-04-27 1984-04-27 Method of soldering ceramic and metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8643684A JPS60231474A (en) 1984-04-27 1984-04-27 Method of soldering ceramic and metal

Publications (1)

Publication Number Publication Date
JPS60231474A true JPS60231474A (en) 1985-11-18

Family

ID=13886860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8643684A Pending JPS60231474A (en) 1984-04-27 1984-04-27 Method of soldering ceramic and metal

Country Status (1)

Country Link
JP (1) JPS60231474A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4729504A (en) * 1985-06-01 1988-03-08 Mizuo Edamura Method of bonding ceramics and metal, or bonding similar ceramics among themselves; or bonding dissimilar ceramics
US4901904A (en) * 1985-07-22 1990-02-20 Ngk Insulators, Ltd. Method of producing brazing metals
US4924033A (en) * 1988-03-04 1990-05-08 Kabushiki Kaisha Toshiba Brazing paste for bonding metal and ceramic
WO2010100432A3 (en) * 2009-03-06 2010-11-18 Institute Of Metal Research, Chinese Academy Of Sciences Sealing technology

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4729504A (en) * 1985-06-01 1988-03-08 Mizuo Edamura Method of bonding ceramics and metal, or bonding similar ceramics among themselves; or bonding dissimilar ceramics
US4901904A (en) * 1985-07-22 1990-02-20 Ngk Insulators, Ltd. Method of producing brazing metals
US4924033A (en) * 1988-03-04 1990-05-08 Kabushiki Kaisha Toshiba Brazing paste for bonding metal and ceramic
WO2010100432A3 (en) * 2009-03-06 2010-11-18 Institute Of Metal Research, Chinese Academy Of Sciences Sealing technology

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