JP3388617B2 - Thyristor container manufacturing method - Google Patents

Thyristor container manufacturing method

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Publication number
JP3388617B2
JP3388617B2 JP33964393A JP33964393A JP3388617B2 JP 3388617 B2 JP3388617 B2 JP 3388617B2 JP 33964393 A JP33964393 A JP 33964393A JP 33964393 A JP33964393 A JP 33964393A JP 3388617 B2 JP3388617 B2 JP 3388617B2
Authority
JP
Japan
Prior art keywords
light introducing
melting point
brazing
container
joined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33964393A
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Japanese (ja)
Other versions
JPH07161864A (en
Inventor
友亮 牧野
庸晃 高嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Spark Plug Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
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Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP33964393A priority Critical patent/JP3388617B2/en
Publication of JPH07161864A publication Critical patent/JPH07161864A/en
Application granted granted Critical
Publication of JP3388617B2 publication Critical patent/JP3388617B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 【0001】 【産業上の利用分野】本発明は、セラミック材と金属材
とからなるサイリスタ容器の製造方法に関する。本発明
の方法は、光によりスイッチングを行う光サイリスタ容
器の各部材を、ロー材料により接合して上記容器を製造
する場合に利用できる。 【0002】 【従来の技術】光によるスイッチングを行わない従来の
サイリスタ容器では、全ての接合部に同一融点のロー材
料を配設して一時の加熱で全体のロー付を行っている。
しかし、光によるスイッチングを行う光サイリスタ容器
では、サファイアからなる光導入部材のロー付位置の精
度が非常に重要であり、光導入部材とそれを支持する固
定用部材の中心線を正確に一致させなければならず、従
来の容器全体を一時に加熱接合する方法では、精度の高
いロー付は困難であって、両者の相対的な偏心及び傾き
による光透過面積の減小により、サイリスタが誤動作す
ることとなる可能性が高い。 【0003】 【発明が解決しようとする課題】本発明は、上記問題点
を解決するものであり、光サイリスタ容器における光導
入部材とそれを固定するための部材とを、優れた位置精
度、気密性、接合強度等を実現しながら接合することに
より、誤動作の少ない光サイリスタ容器を製造する方法
を提供することを課題とする。 【0004】 【課題を解決するための手段】本発明者らは、光サイリ
スタ容器のロー付方法において、正確な位置精度が必要
でありながら、それが難しい光導入部材のロー付方法に
ついて種々検討した結果、先ず、光導入部材を高融点ロ
ー材料によって固定用部材にロー付し、その後、低融点
ロー材料によって容器のその他の接合部をロー付すると
いう、二段階のロー付とすることにより、上記問題が解
消されることを見出し、本発明を完成するに至った。 【0005】即ち、本発明のサイリスタ容器の製造方法
は、底面に光導入口を有し、上端開放側の外周にフラン
ジ部を有し、且つ容器状の金属製固定用部材の上記光導
入口の内面側に、板状のサファイア製光導入部材をロー
材料にて接合するサイリスタ容器の製造方法において、
上記固定用部材と上記光導入部材とを、融点950℃以
下の高融点ロー材料によって接合し、その後、上記光導
入部材が接合された固定用部材の上記フランジ部の内面
側に、金属製筒体の一端部側を挿入し、該金属製筒体の
他端部側を、セラミック製筒体の周壁に設けられた貫通
孔に嵌通し、次いで、上記光導入部材が接合された固定
用部材上記金属製筒体、該金属製筒体と上記セラミッ
ク製筒体、該セラミック製筒体の一端面リング状のフ
ランジ部材、上記セラミック製筒体の他端面リング状
のクッション材及び該クッション材の内側開口部周縁
金属製蓋部材を、低融点ロー材料によって、上記高融
点ロー材料の融点未満の温度に加熱して接合することを
特徴とする。 【0006】本発明の製造方法により得られるサイリス
タ容器の構成部材のうち、上記「固定用部材」、「金属
製筒体」、「リング状のフランジ部材」、「クッション
材」及び「蓋部材」はいずれも金属材からなり、商品名
「コバール」として知られるフェルニコ系合金、42N
i−Fe合金及び銅などのセラミック材との接合材とし
て通常使用される金属材の他、接合方法によってはステ
ンレス鋼等も使用できるが、蓋部材は通常銅製であり、
それ以外の各部材の材料としてはフェルニコ系合金が使
用されることが多い。尚、上記金属製筒体にはフランジ
部を設け、このフランジ部と、固定用部材のフランジ部
の外表面及びセラミック製筒体の貫通孔の外周縁面と
を、ロー材料により接合することが好ましい。それによ
り光サイリスタ容器の構成部分のうち、最も複雑な構造
となっている同部分の気密性がより確実なものとなる。 【0007】また、上記「光導入部材」となる「サファ
イア」としては、工業材料として通常使用されているも
のを用いることができる。上記光導入部材の固定用部材
との接合面には、通常メタライズ層とその表面上のニッ
ケルメッキ層とが設けられ、「高融点ロー材料」によっ
て接合されるが、この場合、「高融点ロー材料の融点は
950℃以下」である。この融点が950℃を超える
と、サファイア表面のメタライズ層内にロー材料成分が
拡散侵入し、サファイアとメタライズ層との界面の接合
強度が著しく低下するため好ましくない。 【0008】上記「融点950℃以下の高融点ロー材
料」としては、例えば、銀ロウ(日本工業規格に定めら
れた主な銀ロウでは、組成によってその適正なロー付温
度には600℃超から1000℃近くの幅がある)、黄
銅ロウ(同じく800℃超から1000℃近くの幅があ
る)、ニッケルロウ(同じく900℃超〜1200℃超
の幅がある)等のいわゆる硬ロウの中から、融点950
℃以下のものを選んで使用できる。また、得られるサイ
リスタ容器の耐熱性を高めるためには、低融点ロー材料
の融点もあまり低くない方が好ましく、この点を考慮す
れば、高融点ロー材料の融点は800℃以上、特に85
0℃以上であることが好ましい。更に、上記「低融点ロ
ー材料」としては、上記の各ロウの中から高融点ロー材
料として用いたグレードの融点を20〜200℃、好ま
しくは50〜150℃程度下回る融点のグレードを選び
使用すればよい。この融点差の範囲内であれば、低融点
ロー材料の加熱接合時に、高融点ロー材料が熱的に安定
であり、得られる容器の耐熱性も優れたものとなるため
好ましい。 【0009】また、「セラミック製筒体」を構成するセ
ラミック材としては、アルミナ、ムライト等の酸化物系
セラミック材、窒化珪素、サイアロン等の窒化物系セラ
ミック材、炭化珪素等の炭化物系セラミック材及びサフ
ァイア等の単結晶など、金属との接合体として通常使用
されるセラミック材が挙げられる。それらの中では、価
格が安い、熱膨張係数が比較的大きいため金属との接合
において残留応力が小さい、また、酸、アルカリに対し
て強い、等の理由により酸化物系のセラミック材が多用
される。 【0010】尚、上記メタライズ層を形成するメタライ
ズ材としては、Mo−Mn、Mo−Mn−Ti、W−M
n、W−Mn−Ti、Mo−SiO2 、Mo−CaO−
SiO2 、Mo−MnO2 −TiO2 、W−SiO2
W−CaO−SiO2 、W−MnO2 −TiO2 、Mo
−MnO2 −TiO2 −SiO2 、W−Re−MnO2
−TiO2 などの系列のものを特に制限されることなく
使用できる。また、サファイア上の上記メタライズ材と
しては、モリブデン、タングステン等の高融点金属の粉
末、SiO2 粉末及びMn粉末を含み、メタライズ材の
固形分の全量を100重量部とした場合に、上記SiO
2 粉末の含有量は2〜8重量部、上記Mn粉末の含有量
は3〜15重量部であるものが、サファイア、メタライ
ズ層、ニッケルメッキ層各材料間の接合強度及び気密性
に最も優れており特に好ましい。 【0011】 【作用】実質的に不純物を含まないサファイアは無色透
明であるため、従来より、光サイリスタ容器の他にも、
半導体パッケージ、高真空チャンバーの窓等として利用
されている。また、特に高品位特性(高周波特性、熱伝
導率等)が要求される半導体パッケージでは、パッケー
ジの本体そのものがサファイアで構成されることもあ
る。そして、サファイアの表面には通常メタライズ層及
びニッケルメッキ層が形成され、このニッケルメッキ層
と金属材との間にロー材料を介在させて接合される。本
製造方法は、サファイアとそれを固定する部材とを予め
高融点ロー材料で接合した後、容器全体を低融点ロー材
料によって接合するものである。従って、サファイアと
それを固定する金属材との偏心及び傾きを最小限として
ロー付を行うことができ、十分且つ正確な光透過量を確
保することができる。また、高融点ロー材料の融点を制
限することによりメタライズ層へのロー成分の拡散、侵
入を抑制することができ、気密性、接合強度ともに優れ
た容器が得られる。 【0012】 【実施例】以下、本発明の実施例を図面により詳細に説
明する。 (1) 光導入部材とそれを固定する金属部材との接合 先ず、サファイアからなる円板状の光導入部材1の片面
の周縁に、Mo粉末86.5重量部(以下、部とい
う。)、SiO2 粉末5.0部、Mn粉末7.3部及び
TiH2 粉末1.2部からなるメタライズ材の層(図示
せず)を形成し、その後、該メタライズ層の表面上にニ
ッケルメッキ層(図示せず)を形成した。次いで、光導
入口31の内周面に、高融点ロー材料(Ag−15Cu
合金)からなる層2を設けたフェルニコ系合金(商品名
「コバール」)製の光導入部材1を固定するための固定
用部材3を、上記光導入口31を下面として静置し、そ
の後、上記ニッケルメッキ層と上記ロー材層2とが当接
するように光導入部材1を載置し、900℃に加熱して
ロー付した。図1は固定用部材3と光導入部材1とがロ
ー材層2を介して配置された、加熱接合前の状態を表
す。 【0013】(2) 上記(1) の光導入部材を接合した固定
用部材と他部材及び他部材相互の接合 上記(1) に続いて、上記光導入部材1が接合された固定
用部材3のフランジ部32の内面側に、一端部側に近い
位置にフランジ部41が設けられ、該フランジ部41の
上記固定用部材3のフランジ部32に相対する面に低融
点ロー材料(Ag−Cu共晶)からなる層5が形成され
た、フェルニコ系合金製のパイプ4の上記一端部側を挿
入し、その他端部側を、Al23 を主成分とするセラミ
ック材からなる外周絶縁部材6の周壁に設けられ、その
内周全面に低融点ロー材料からなる層5が形成された貫
通孔61に嵌通した。その後、上記光導入部材1、固定
用部材3、パイプ4及び外周絶縁部材6からなる組み立
て体の、外周絶縁部材6の両端面に低融点ロー材料から
なる層5を設けた。次いで、その一端面側をフェルニコ
系合金製のリング状のフランジ7の表面に置き、その
後、他端面側に、フェルニコ系合金製のリング状のクッ
ション材8を載置し、該クッション材8の内側開口部周
縁に設けられた低融点ロー材料からなる層5上に銅ブロ
ック9を置き、図2に示すように組み立てた。この組み
立て体を830℃に加熱して各接合部を接合し、光サイ
リスタ容器を製造した。 【0014】図2のような組み立て体を加熱して光サイ
リスタ容器をロー付により製造する場合、光導入部材を
固定用部材に予め接合せず、容器全体を一時に接合する
方法では、容器の側面にあり、しかも固定用部材の光導
入口と、それに相対する側に挿入された筒体の端部との
中間に位置する光導入部材は、正確な位置に支持するこ
とが非常に難く、光導入部材と固定用部材とを偏心する
ことなく接合することは容易ではない。しかもこの部分
はサイリスタのスイッチングのための光導入部であり、
それら部材の僅かな偏心や傾きもサイリスタの誤動作の
原因となる。本発明の方法により製造した上記実施例で
は、光導入部を構成する部材を予め図1に示す状態で接
合することにより、上記問題点が解消され、優れた性能
を有する光サイリスタ容器を得ることができる。尚、本
発明においては、前記具体的実施例に示すものに限られ
ず、目的、用途に応じて本発明の範囲内で種々変更した
実施例とすることができる。 【0015】 【発明の効果】本発明の方法により、固定用部材の内面
になるため、接合時に正確な位置に支持することが困難
である光導入部材を、固定用部材との正確な位置関係で
もって接合することができ、また、高融点ロー材料の融
点を950℃以下とすることにより、サファイアとメタ
ライズ層との界面の接合強度が損なわれることなく、位
置精度、気密性、接合強度ともに優れたサイリスタ容器
が得られる。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thyristor container made of a ceramic material and a metal material. The method of the present invention can be used when the members of an optical thyristor container that performs switching by light are joined by a raw material to manufacture the above container. 2. Description of the Related Art In a conventional thyristor container which does not perform switching by light, a brazing material having the same melting point is disposed at all joints, and the entire brazing is performed by temporary heating.
However, in an optical thyristor container that performs switching by light, the accuracy of the brazing position of the light introducing member made of sapphire is very important, and the center line of the light introducing member and the fixing member that supports the light introducing member must be accurately aligned. In the conventional method of heating and joining the entire container at a time, it is difficult to perform brazing with high accuracy, and the thyristor malfunctions due to a reduction in the light transmission area due to the relative eccentricity and inclination of the two. It is likely to be. [0003] The present invention solves the above-mentioned problems, and provides a light introducing member and a member for fixing the light introducing member in an optical thyristor container with excellent positional accuracy and airtightness. An object of the present invention is to provide a method for manufacturing an optical thyristor container with less malfunction by performing bonding while realizing the properties and bonding strength. The inventors of the present invention have studied various methods for brazing an optical thyristor container to a light introducing member, which require accurate positional accuracy but is difficult to do so. As a result, first, the light-introducing member is brazed to the fixing member with a high-melting-point brazing material, and then the other joining portions of the container are brazed with a low-melting-point brazing material. The inventors have found that the above problems can be solved, and have completed the present invention. That is, according to the method for manufacturing a thyristor container of the present invention, the light introducing port is provided on the bottom surface, the flange is provided on the outer periphery on the upper end open side, and the light introducing port of the container-shaped metal fixing member is provided. In the method for manufacturing a thyristor container in which a plate-shaped sapphire light introducing member is joined with a raw material,
The fixing member and the light introducing member are joined by a high melting point low material having a melting point of 950 ° C. or less, and then a metal cylinder is provided on the inner surface side of the flange portion of the fixing member to which the light introducing member is joined. One end side of the body is inserted, the other end side of the metal cylindrical body is inserted into a through hole provided in a peripheral wall of the ceramic cylindrical body, and then the fixing member to which the light introducing member is joined. And the metal cylinder , the metal cylinder and the ceramic cylinder, one end face of the ceramic cylinder and a ring-shaped flange member, the other end face of the ceramic cylinder and a ring-shaped cushion material , and Periphery of the inner opening of the cushion material
And the metal lid member is joined by heating with a low melting point material to a temperature lower than the melting point of the high melting point material. [0006] Among the constituent members of the thyristor container obtained by the production method of the present invention, the above-mentioned "fixing member", "metal cylinder", "ring-shaped flange member", "cushion material" and "lid member". Are made of metallic materials, and are fernico-based alloys known as "Kovar", 42N
In addition to a metal material usually used as a bonding material with a ceramic material such as an i-Fe alloy and copper, stainless steel or the like can be used depending on the bonding method, but the lid member is usually made of copper.
As a material for each of the other members, a fernico alloy is often used. It is to be noted that a flange portion is provided on the metal cylinder, and the flange portion and the outer surface of the flange portion of the fixing member and the outer peripheral surface of the through hole of the ceramic cylinder can be joined with a low material. preferable. As a result, the airtightness of the most complicated structure of the optical thyristor container is more assured. [0007] As the "sapphire" serving as the "light introducing member", those commonly used as industrial materials can be used. Usually, a metallized layer and a nickel plating layer on the surface are provided on the joint surface of the light-introducing member with the fixing member, and are joined by a “high-melting-point material”. The melting point of the material is 950 ° C. or less ”. If the melting point exceeds 950 ° C., the raw material component diffuses and penetrates into the metallized layer on the sapphire surface, and the bonding strength at the interface between the sapphire and the metallized layer is undesirably reduced. Examples of the above-mentioned "high melting point brazing material having a melting point of 950 ° C. or less" include, for example, silver brazing (in the case of main silver brazing specified in Japanese Industrial Standards, the appropriate brazing temperature depends on the composition; Among the so-called hard brazing materials such as a brazing brazing brazing brazing brazing brazing brazing brazing brazing brazing brazing brazing brazing brazing brazing brazing braze brazing brazing brass brazing brass brazing brass brazing brass brazing brass brazing brass brazing brass brass brazing brass brazing brass brass brass brazing brass brass brazing brass brass brass brazing brass brazing brass , Melting point 950
It can be used by selecting ones below ℃. Further, in order to enhance the heat resistance of the obtained thyristor container, it is preferable that the melting point of the low melting point material is not too low, and in view of this point, the melting point of the high melting point material is 800 ° C. or more, especially 85 ° C.
The temperature is preferably 0 ° C. or higher. Further, as the above-mentioned "low melting point raw material", a grade having a melting point lower than the melting point of the grade used as the high melting point raw material by 20 to 200 ° C, preferably about 50 to 150 ° C is selected from each of the above waxes. I just need. The difference in the melting point is preferable because the high melting point material is thermally stable during the heat joining of the low melting point material, and the resulting container also has excellent heat resistance. The ceramic material constituting the "ceramic cylindrical body" includes oxide ceramic materials such as alumina and mullite; nitride ceramic materials such as silicon nitride and sialon; and carbide ceramic materials such as silicon carbide. And a ceramic material usually used as a joint with a metal such as a single crystal such as sapphire. Among them, oxide-based ceramic materials are often used because they are inexpensive, have a relatively large coefficient of thermal expansion, have low residual stress in joining with metals, and are resistant to acids and alkalis. You. The metallizing material for forming the metallized layer includes Mo-Mn, Mo-Mn-Ti, WM
n, W-Mn-Ti, Mo-SiO 2, Mo-CaO-
SiO 2 , Mo—MnO 2 —TiO 2 , W—SiO 2 ,
W-CaO-SiO 2, W -MnO 2 -TiO 2, Mo
—MnO 2 —TiO 2 —SiO 2 , W—Re—MnO 2
It can be used without any particular limitation of the sequence, such as -TiO 2. The metallizing material on sapphire includes powder of a high melting point metal such as molybdenum and tungsten, SiO 2 powder and Mn powder, and when the total solid content of the metallizing material is 100 parts by weight,
(2) The content of the powder is 2 to 8 parts by weight, and the content of the Mn powder is 3 to 15 parts by weight, the sapphire, the metallized layer, the nickel plating layer are most excellent in the bonding strength and airtightness between the respective materials. And particularly preferred. Since sapphire containing substantially no impurities is colorless and transparent, conventionally, besides the optical thyristor container,
It is used as a semiconductor package, a window of a high vacuum chamber, and the like. In particular, in a semiconductor package that requires high-quality characteristics (high-frequency characteristics, thermal conductivity, and the like), the main body of the package itself may be made of sapphire. Then, a metallized layer and a nickel plating layer are usually formed on the surface of the sapphire, and the nickel plating layer and the metal material are joined with a brazing material interposed therebetween. In this production method, sapphire and a member for fixing the sapphire are joined in advance with a high melting point material, and then the entire container is joined with a low melting point material. Therefore, brazing can be performed while minimizing the eccentricity and inclination between sapphire and the metal material fixing the sapphire, and a sufficient and accurate light transmission amount can be secured. In addition, by limiting the melting point of the high melting point material, diffusion and intrusion of the low component into the metallized layer can be suppressed, and a container having excellent airtightness and bonding strength can be obtained. Embodiments of the present invention will be described below in detail with reference to the drawings. (1) Joining of the light introducing member and a metal member for fixing the light introducing member First, 86.5 parts by weight of Mo powder (hereinafter, referred to as "part") are provided on the periphery of one surface of the disc-shaped light introducing member 1 made of sapphire. A metallizing material layer (not shown) consisting of 5.0 parts of SiO 2 powder, 7.3 parts of Mn powder and 1.2 parts of TiH 2 powder is formed, and then a nickel plating layer ( (Not shown). Next, a high melting point low material (Ag-15Cu) is applied to the inner peripheral surface of the light introducing port 31.
The fixing member 3 for fixing the light introducing member 1 made of a fernico-based alloy (trade name “Kovar”) provided with the layer 2 made of an alloy) is left standing with the light introducing port 31 as a lower surface. The light introducing member 1 was placed so that the nickel plating layer and the brazing material layer 2 were in contact with each other, and were heated to 900 ° C. and brazed. FIG. 1 shows a state before the heat bonding in which the fixing member 3 and the light introducing member 1 are arranged via the brazing material layer 2. (2) Fixing member to which the light introducing member is joined in (1) above and other members and joining of other members. Following (1), fixing member 3 in which the light introducing member 1 is joined. A flange portion 41 is provided on the inner surface side of the flange portion 32 at a position close to one end portion side, and a surface of the flange portion 41 facing the flange portion 32 of the fixing member 3 has a low melting point low material (Ag-Cu). An outer peripheral insulating member made of a ceramic material mainly composed of Al 2 O 3 is inserted at one end of the pipe 4 made of a fernico alloy, on which a layer 5 made of eutectic is formed. 6 was fitted in a through hole 61 in which a layer 5 made of a low-melting-point material was formed on the entire inner peripheral surface. After that, a layer 5 made of a low melting point low material was provided on both end surfaces of the outer peripheral insulating member 6 of the light guide member 1, the fixing member 3, the pipe 4, and the outer peripheral insulating member 6. Next, one end surface is placed on the surface of the ring-shaped flange 7 made of a fernico alloy, and then, on the other end surface, a ring-shaped cushion material 8 made of a fernico alloy is placed. The copper block 9 was placed on the layer 5 made of the low melting point low material provided on the peripheral edge of the inner opening, and assembled as shown in FIG. This assembly was heated to 830 ° C. to join the joints to produce an optical thyristor container. When the optical thyristor container is manufactured by brazing by heating the assembly as shown in FIG. 2, the method of joining the entire container at once without joining the light introducing member to the fixing member in advance is a method of manufacturing the optical thyristor container. The light introduction member located on the side surface and located between the light introduction port of the fixing member and the end of the cylindrical body inserted on the side opposite thereto is very difficult to support at an accurate position, It is not easy to join the light introducing member and the fixing member without eccentricity. Moreover, this part is a light introduction part for thyristor switching,
A slight eccentricity or inclination of those members also causes a malfunction of the thyristor. In the above-mentioned embodiment manufactured by the method of the present invention, the above-mentioned problems are solved and the optical thyristor container having excellent performance is obtained by joining the members constituting the light introducing portion in the state shown in FIG. 1 in advance. Can be. It should be noted that the present invention is not limited to the specific embodiments described above, but can be variously modified within the scope of the present invention according to the purpose and application. According to the method of the present invention, the light introducing member, which is difficult to be supported at an accurate position at the time of joining since it becomes the inner surface of the fixing member, has a precise positional relationship with the fixing member. In addition, by setting the melting point of the high melting point material to 950 ° C. or less, the joining strength at the interface between the sapphire and the metallized layer is not impaired, and the positional accuracy, airtightness, and joining strength are all reduced. An excellent thyristor container is obtained.

【図面の簡単な説明】 【図1】固定用金属部材の貫通孔内面に高融点ロー材料
からなる層を介して光導入部材が載置された状態を表す
断面図である。 【図2】図1の光導入部材と固定用金属部材とを接合し
た後、他部材と低融点ロー材料からなる層を介して組み
立てた状態を表す断面図である。 【符号の説明】 1;光導入部材、2;高融点ロー材料からなる層、3;
固定用部材、31;光導入口、32;フランジ部、4;
パイプ、41;フランジ部、5;低融点ロー材料からな
る層、6;外周絶縁部材、61;貫通孔、7;フラン
ジ、8;クッション材、9;銅ブロック
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a state in which a light introducing member is placed on the inner surface of a through hole of a fixing metal member via a layer made of a high melting point low material. FIG. 2 is a cross-sectional view showing a state where the light introducing member and the fixing metal member of FIG. 1 are joined and then assembled with another member via a layer made of a low melting point low material. [Description of Signs] 1; light-introducing member, 2; layer made of high-melting-point raw material, 3;
Fixing member, 31; light inlet, 32; flange, 4;
Pipe; 41; flange portion; 5; layer made of low-melting material; 6; outer peripheral insulating member; 61; through hole; 7; flange; 8; cushion material;

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H01L 29/74 L (56)参考文献 特開 昭63−31139(JP,A) 特開 平2−87837(JP,A) 特開 昭61−42936(JP,A) 特開 平5−243410(JP,A) 特開 平3−236294(JP,A) 実開 昭59−140443(JP,U) 実開 昭64−29838(JP,U) 実開 昭55−135464(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01L 23/10 C04B 37/02 G02B 26/00 H01L 23/02 H01L 29/74 ──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. 7 Identification code FI H01L 29/74 L (56) References JP-A-63-31139 (JP, A) JP-A-2-87837 (JP, A) JP-A-61-42936 (JP, A) JP-A-5-243410 (JP, A) JP-A-3-236294 (JP, A) Japanese Utility Model Application No. 59-140443 (JP, U) Japanese Utility Model Application No. 64-29838 (JP, U) Japanese Utility Model 1979-535464 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 23/10 C04B 37/02 G02B 26/00 H01L 23/02 H01L 29 / 74

Claims (1)

(57)【特許請求の範囲】 【請求項1】 底面に光導入口を有し、上端開放側の外
周にフランジ部を有し、且つ容器状の金属製固定用部材
の上記光導入口の内面側に、板状のサファイア製光導入
部材をロー材料にて接合するサイリスタ容器の製造方法
において、 上記固定用部材と上記光導入部材とを、融点950℃以
下の高融点ロー材料によって接合し、その後、上記光導
入部材が接合された固定用部材の上記フランジ部の内面
側に、金属製筒体の一端部側を挿入し、該金属製筒体の
他端部側を、セラミック製筒体の周壁に設けられた貫通
孔に嵌通し、次いで、上記光導入部材が接合された固定
用部材上記金属製筒体、該金属製筒体と上記セラミッ
ク製筒体、該セラミック製筒体の一端面リング状のフ
ランジ部材、上記セラミック製筒体の他端面リング状
のクッション材及び該クッション材の内側開口部周縁
金属製蓋部材を、低融点ロー材料によって、上記高融
点ロー材料の融点未満の温度に加熱して接合することを
特徴とするサイリスタ容器の製造方法。
(57) [Claims 1] A light introducing port is provided on a bottom surface, a flange portion is provided on an outer periphery on an open upper end side, and the light introducing port of the container-shaped metal fixing member is provided. In the method for manufacturing a thyristor container in which a plate-like sapphire light introducing member is joined to the inner surface with a raw material, the fixing member and the light introducing member are joined with a high melting point material having a melting point of 950 ° C. or less. Then, one end of the metal cylinder is inserted into the inner surface of the flange portion of the fixing member to which the light introducing member is joined, and the other end of the metal cylinder is connected to the ceramic cylinder. The fixing member to which the light introducing member is joined and the metal cylinder , the metal cylinder and the ceramic cylinder, and the ceramic cylinder, which are fitted through through holes provided in the peripheral wall of the body one end face a ring-shaped flange member, the other of the ceramic tubular body End face and ring-shaped cushioning material , and peripheral edge of inner opening of the cushioning material
And joining the metal lid member to the metal lid member by using a low-melting-point brazing material at a temperature lower than the melting point of the high-melting-point brazing material.
JP33964393A 1993-12-02 1993-12-02 Thyristor container manufacturing method Expired - Fee Related JP3388617B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33964393A JP3388617B2 (en) 1993-12-02 1993-12-02 Thyristor container manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33964393A JP3388617B2 (en) 1993-12-02 1993-12-02 Thyristor container manufacturing method

Publications (2)

Publication Number Publication Date
JPH07161864A JPH07161864A (en) 1995-06-23
JP3388617B2 true JP3388617B2 (en) 2003-03-24

Family

ID=18329448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33964393A Expired - Fee Related JP3388617B2 (en) 1993-12-02 1993-12-02 Thyristor container manufacturing method

Country Status (1)

Country Link
JP (1) JP3388617B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL356439A1 (en) * 2001-10-05 2003-04-07 Ngk Spark Plug Co Method of making a ceramic connecting component, ceramic connecting component as such, vacuum change-over switch and vacuum vessel
JP4659812B2 (en) * 2007-12-26 2011-03-30 日本特殊陶業株式会社 Method of manufacturing ceramic member for bonding, ceramic member for bonding, vacuum switch, and vacuum vessel
US9407746B2 (en) * 2012-12-27 2016-08-02 Gtat Corporation Mobile electronic device comprising a sapphire cover plate having a low level of inclusions

Also Published As

Publication number Publication date
JPH07161864A (en) 1995-06-23

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