JPS62182172A - Method of joining ceramics to metal - Google Patents

Method of joining ceramics to metal

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Publication number
JPS62182172A
JPS62182172A JP2093086A JP2093086A JPS62182172A JP S62182172 A JPS62182172 A JP S62182172A JP 2093086 A JP2093086 A JP 2093086A JP 2093086 A JP2093086 A JP 2093086A JP S62182172 A JPS62182172 A JP S62182172A
Authority
JP
Japan
Prior art keywords
metal
ceramics
metallized layer
ceramic
spacer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2093086A
Other languages
Japanese (ja)
Inventor
堀部 芳幸
宮 好宏
上山 守
豊 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2093086A priority Critical patent/JPS62182172A/en
Publication of JPS62182172A publication Critical patent/JPS62182172A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はセラミックスと金属との接合方法、詳しくは表
面にメタライズ層を設けたセラミックスト銅、ニッケル
、鋼、モリブデン、タングステン等の金属との接合方法
に関する。
[Detailed Description of the Invention] (Field of Industrial Application) The present invention relates to a method for joining ceramics and metals, and more specifically, a method for joining ceramics with metals such as copper, nickel, steel, molybdenum, and tungsten, which have a metallized layer on their surfaces. Regarding the joining method.

(従来の技術) 従来から半導体素子のパンケージ、集積回路用基板、構
造用部品(マグネトロン用外囲器、気密端子、電子管)
などにセラミックスと金属とを接合した接合体が用いら
れている。
(Prior technology) Conventionally, semiconductor device pan cages, integrated circuit boards, structural parts (magnetron envelopes, hermetic terminals, electron tubes)
Bonded bodies made by bonding ceramics and metals are used in applications such as ceramics and metals.

従来は、第2図に示すようにメタライズ層2を有するセ
ラミックス1とセラミックス1より対向面積の大きい金
属3とをろう材9を介して接合していたが、ろう材9が
金属3の部分に多く付着して金属3の接合面積がセラミ
ック1に比較して多いと共にセラミックス1と金属3と
の熱膨張係数の違いKよりセラミックス1に係る応力が
大きくなり、メタライズ層2の端部からセラミックス1
内部へクランク6が入り、セラミックス1が破壊したり
、接合強度が低下するなどの欠点があった。
Conventionally, as shown in FIG. 2, a ceramic 1 having a metallized layer 2 and a metal 3 having a larger opposing area than the ceramic 1 were joined via a brazing material 9, but the brazing material 9 was attached to the metal 3. As a result, the bonding area of the metal 3 is larger than that of the ceramic 1, and the stress on the ceramic 1 becomes larger due to the difference K in thermal expansion coefficient between the ceramic 1 and the metal 3.
There were drawbacks such as the crank 6 entering the interior, causing the ceramic 1 to break and the bonding strength to decrease.

このような欠点を解決するため、特開昭59−1028
76号公報に記載されているように、非酸化物セラミッ
クスと金属の中間の熱膨張係数を有する物質(酸化物セ
ラミック層および金属層)を非酸化物セラミックスと金
属との間に介在させて接合する方法、特開昭60−90
877号公報に記載されているように、S+C焼結体の
金属化表面に低熱膨張率金属薄板をロー付し、該低熱膨
張金属板を介して他の金属に一部非接合部分を残して接
合する方法などが提案されている。
In order to solve these drawbacks, Japanese Patent Application Laid-Open No. 59-1028
As described in Publication No. 76, a material (oxide ceramic layer and metal layer) having a coefficient of thermal expansion intermediate between that of non-oxide ceramics and metal is interposed between non-oxide ceramics and metal for bonding. How to do that, JP-A-60-90
As described in Japanese Patent No. 877, a thin metal plate with a low thermal expansion coefficient is brazed on the metallized surface of the S+C sintered body, and a part of the metal plate is bonded to other metals via the low thermal expansion metal plate, leaving a part unbonded. A method of joining them has been proposed.

(発明が解決しようとする問題点) しかしながら、特開昭59−102876号公報に示さ
れる方法1%開昭60−90877号公報に示される方
法などでは、中間層を介して接合するため、直接金属部
材を接合できないという欠点があった。
(Problems to be Solved by the Invention) However, in the method shown in JP-A No. 59-102876 and the method shown in JP-A No. 60-90877, bonding is performed directly through an intermediate layer. There was a drawback that metal members could not be joined.

本発明はこのような欠点のないセラミックスと金属との
接合方法を提供することを目的とするものである。
The object of the present invention is to provide a method for joining ceramics and metal without such drawbacks.

(問題点を解決するための手段) 本発明者らは上記の欠点について研党を重ねた結果、セ
ラミックスのメタライズ層の端部に相対する金属の上部
にろう材の厚さよりも薄いスペーサーを載置することに
より、セラミックスより対向面積の大きい金属を用いて
もセラミックスの破壊、接合強度の低下などの欠点がな
くセラミックスと金属とをろう材を介して直接接合でき
ることを見い出した。
(Means for Solving the Problems) As a result of extensive research into the above-mentioned drawbacks, the inventors of the present invention placed a spacer thinner than the thickness of the brazing filler metal on the top of the metal facing the end of the ceramic metallized layer. The inventors have discovered that by using a metal with a larger facing area than ceramics, ceramics and metals can be directly bonded via a brazing filler metal without defects such as destruction of the ceramics or reduction in bonding strength.

本発明は表面にメタライズ層を設けたセラミックスと金
属とをろう材にエリ接合する方法において、メタライズ
層の端部に相対する金属の上部にろう材の厚さよりも薄
いスペーサーを載置し、かつメタライズ層と金属との間
にろう材を介して接合するセラミックスと金属との接合
方法に関する。
The present invention is a method for edge-bonding ceramics with a metallized layer on the surface and metal to a brazing material, in which a spacer thinner than the thickness of the brazing material is placed on the upper part of the metal facing the end of the metallized layer, and The present invention relates to a method for joining ceramics and metal by joining a metallized layer and metal via a brazing material.

本発明において用いられるセラミックスの程類について
は特に制限はないが、酸化物系セラミックスよりも一般
に熱膨張係数が小さい非酸化物系セラミックス、例えば
炭化珪素、窒化アルミニウム、窒化珪素などが好ましい
There are no particular restrictions on the type of ceramic used in the present invention, but non-oxide ceramics, which generally have a smaller coefficient of thermal expansion than oxide ceramics, such as silicon carbide, aluminum nitride, and silicon nitride, are preferred.

またメタライズ層の形成方法は、モリブデン。The metallized layer is formed using molybdenum.

タングステン等の高融点金属を主成分とするペーストを
塗布し焼成する方法、銅、ニッケル等をセラミックスに
直接めっきする方法、物理蒸着法などの方法があるが本
発明においては特に制限はない。
Methods include a method of applying a paste containing a high melting point metal such as tungsten as a main component and firing, a method of directly plating copper, nickel, etc. on ceramics, a physical vapor deposition method, but there are no particular limitations in the present invention.

更に本発明において用いられるろう材は、銀−銅共晶ろ
う、銀ろう、銅ろう、金ろう等が用いられ、金属は、銅
、ニッケル、鋼、モリブデン、タングステン等が用いら
れる。
Further, as the brazing material used in the present invention, silver-copper eutectic brazing, silver brazing, copper brazing, gold brazing, etc. are used, and as the metal, copper, nickel, steel, molybdenum, tungsten, etc. are used.

セラミックスと金属とを接合する際に用いられるスペー
サーとしては、ろう材とぬれ難いアルミナ、炭化珪素な
どのセラミックス、セラミックスで被覆した金属などが
用いられる。スペーサーの厚さは、用いるろう材の厚さ
よりも薄くする必要があり、ろう材よりも厚いとセラミ
ックスと金属との接合が困難となる。
As a spacer used when joining ceramics and metals, ceramics such as alumina and silicon carbide, which are difficult to wet with the brazing material, metals coated with ceramics, and the like are used. The thickness of the spacer needs to be thinner than the thickness of the brazing filler metal used; if it is thicker than the brazing filler metal, it becomes difficult to join the ceramic and metal.

(実施例) 以下本発明の実施例を図面の第1図を引用して説明する
(Example) An example of the present invention will be described below with reference to FIG. 1 of the drawings.

実施例1 セラミックスとして第1図のfa)に示す寸法が20鵬
×20閣、厚み1.0−の炭化珪素基板(日立製作新製
、商品名5C−101)7上にモリブデンペーストtl
 8mmX18mm、厚み20μmの寸法にスクリーン
印刷し、ついで弱還元性雰囲気中で1300℃で1時間
焼成した後、無電解ニッケルめっき(日本カニゼン製、
商品名8−680)を2μmの厚みに施し、第1図のf
blに示すようなメタライズ層2を形成した。
Example 1 Molybdenum paste TL was applied on a ceramic silicon carbide substrate (manufactured by Hitachi Seisakusho, trade name 5C-101) 7 with dimensions of 20 x 20 and thickness of 1.0 as shown in fa in Figure 1.
It was screen printed to a size of 8 mm x 18 mm and 20 μm thick, then baked at 1300°C for 1 hour in a slightly reducing atmosphere, and then electroless nickel plated (manufactured by Nippon Kanigen,
Product name 8-680) was applied to a thickness of 2 μm, and
A metallized layer 2 as shown in bl was formed.

一方第1図の(C)に示す寸法が40mmX40mm。On the other hand, the dimensions shown in FIG. 1(C) are 40 mm x 40 mm.

厚み2閤の無酸素銅板8を用い、この無酸素銅板8に炭
化珪素基板7を接合した際、メタライズ層2の端部に相
対する無酸素銅板8の上部に炭化珪素被膜を形成した厚
み0.1 wnのステンレス製のスペーサー5を載置し
、その内側に17.0国X17.0鵬、厚み0.2 m
mの銀−銅共晶ろう4を載置した。
When silicon carbide substrate 7 is bonded to oxygen-free copper plate 8 using oxygen-free copper plate 8 with a thickness of 2, a silicon carbide coating is formed on the upper part of oxygen-free copper plate 8 facing the end of metallized layer 2. .1 wn stainless steel spacer 5 is placed inside it, 17.0mm x 17.0mm, thickness 0.2m
A silver-copper eutectic solder 4 of m was placed.

1m第1図の(d)に示すようにスペーサー5および銀
−銅共晶ろう4を載置した無酸素銅板8上にメタライズ
層2を設けた炭化珪素基板7を載置し。
1 m As shown in FIG. 1(d), a silicon carbide substrate 7 provided with a metallized layer 2 was placed on an oxygen-free copper plate 8 on which a spacer 5 and a silver-copper eutectic solder 4 were placed.

H2雰囲気中850℃で10分間加熱し、冷却後スペー
サー5を取り除き第1図の(e)に示すように炭化珪素
基板7と無酸素鋼板8とを接合した。なお比較のためス
ペーサーを載置しない無酸素銅板に対しても同様の接合
を行なった。比較例の場合は。
After heating at 850° C. for 10 minutes in an H2 atmosphere and cooling, spacer 5 was removed and silicon carbide substrate 7 and oxygen-free steel plate 8 were joined as shown in FIG. 1(e). For comparison, similar bonding was also performed on an oxygen-free copper plate without a spacer. For comparative examples.

接合後にセラミックスが破壊したが、スペーサーを載置
して無酸素銅板を接合したものは、断面を観察してもク
ランクの発生は認められなかった。
Although the ceramics were destroyed after bonding, no cranking was observed when the cross section was observed in the case where a spacer was placed and the oxygen-free copper plate was bonded.

実施例2 セラミックスとして実施例1で用いたメタライズ層を有
する炭化珪素板を用い、金属として実施例1で用いた無
酸素銅板と同一形状のモリブデン板にニッケルめっき(
日本カニゼン製、商品名S−680)を3μmの厚みに
施したものを用い。
Example 2 A silicon carbide plate having the metallized layer used in Example 1 was used as the ceramic, and a molybdenum plate having the same shape as the oxygen-free copper plate used in Example 1 as the metal was plated with nickel (
A material coated with Nippon Kanizen Co., Ltd. (trade name: S-680) to a thickness of 3 μm was used.

以下実施例1と同様の方法で炭化珪素基板とモリブデン
板とを接合した。また比較のためスペーサーを載置しな
いニッケルめっきモリブデン板に対しても同様の接合を
行なった。比較例の場合は。
Thereafter, a silicon carbide substrate and a molybdenum plate were bonded together in the same manner as in Example 1. For comparison, similar bonding was also performed on a nickel-plated molybdenum plate without spacers. For comparative examples.

断面を観察するとメタライズ層の端部からクランクの発
生が認められたが、スペーサーを載置してモリブデン板
を接合したものは、クラックの発生は認められなかった
When the cross section was observed, cracks were observed from the edges of the metallized layer, but no cracks were observed when the molybdenum plates were bonded with spacers placed.

実施例3 セラミックスとして実施例1と同一形状の96チアルミ
ナ基板(日立化成工業製、商品名ハロツクスナ552)
を用い、この基板にモリブデンペーストを実施例1と同
様の方法でスクリーン印刷し1弱還元性雰囲気中で1,
450℃で1時間焼成した後、実施例1と同様にニッケ
ルめっきを施しメタライズ層を形成した。また金属とし
ては、実施例1で用いた無酸素銅板を用いた。これらを
実施例1と同様の方法で接合した。なお、比較のためス
ペーサーを載置しない無酸素銅板に対しても同様の接合
を行なった。いずれの場合も接合後にはメタライズ端部
からのクランクは観察されなかった。そこで−65°C
〜+150℃の液中の熱衝撃試験を100サイクル行な
ったところ、比較例の場合は、メタライズ層の端部から
のクランクが観察されたが、スペーサーを載置して接合
したものにはクランクは認められなかった。
Example 3 A 96-chialumina substrate having the same shape as in Example 1 as a ceramic (manufactured by Hitachi Chemical Co., Ltd., trade name Halotsukusuna 552)
A molybdenum paste was screen printed on this substrate in the same manner as in Example 1, and 1,
After firing at 450° C. for 1 hour, nickel plating was applied in the same manner as in Example 1 to form a metallized layer. Further, as the metal, the oxygen-free copper plate used in Example 1 was used. These were joined in the same manner as in Example 1. For comparison, similar bonding was also performed on an oxygen-free copper plate on which no spacer was placed. In either case, no cranking from the metallized end was observed after joining. There -65°C
When a thermal shock test in liquid at ~+150°C was conducted for 100 cycles, cranking was observed from the edge of the metallized layer in the comparative example, but no cranking was observed in the case where a spacer was placed and bonded. I was not able to admit.

(発明の効果) 本発明の接合方法によれば、セラミックスに係る応力が
従来に比較し小さくなるのでセラミックスの破壊や、接
合強度の低下などの欠点がなく。
(Effects of the Invention) According to the bonding method of the present invention, the stress related to ceramics is reduced compared to the conventional method, so there are no drawbacks such as destruction of ceramics or reduction in bonding strength.

セラミックスと金属とをろう材を介して直接接合するこ
とが可能となる。
It becomes possible to directly join ceramics and metals via a brazing material.

【図面の簡単な説明】[Brief explanation of drawings]

第1図o(al、 (b)、 (c)、 (dlオxび
(elは本発明の一実施例になるセラミックスと金属と
の接合体の製造工程を示す断面図、第2図は従来の方法
で接合した接合体を示す断面図である。 符号の説明 1・・・セラミックス    2・・・メタライズ層3
・・・金属        4・・・銀−銅共晶ろう5
・・・スペーサー     6・・・クランク7・・・
炭化珪素基板    8・・・無酸素銅板9・・・ろう
材 代理人 弁理士 若 林 邦 彦 4:a−@茄3さ 第1図 第2図
Fig. 1 o(al, (b), (c), (dl x and el) is a sectional view showing the manufacturing process of a joined body of ceramics and metal according to an embodiment of the present invention, Fig. 2 is It is a sectional view showing a joined body joined by a conventional method. Explanation of symbols 1...Ceramics 2...Metallized layer 3
...Metal 4...Silver-copper eutectic wax 5
...Spacer 6...Crank 7...
Silicon carbide substrate 8...Oxygen-free copper plate 9...Brazing material agent Patent attorney Kunihiko Wakabayashi 4:a-@3sa Fig. 1 Fig. 2

Claims (1)

【特許請求の範囲】[Claims] 1、表面にメタライズ層を設けたセラミックスと金属と
をろう材により接合する方法において、メタライズ層の
端部に相対する金属の上部にろう材の厚さよりも薄いス
ペーサーを載置し、かつメタライズ層と金属との間にろ
う材を介して接合することを特徴とするセラミックスと
金属との接合方法。
1. In a method of joining ceramics with a metallized layer on the surface and metal using a brazing material, a spacer thinner than the thickness of the brazing material is placed on the top of the metal facing the end of the metallized layer, and the metallized layer is A method for joining ceramics and metal, which is characterized by joining ceramics and metal through a brazing material.
JP2093086A 1986-01-31 1986-01-31 Method of joining ceramics to metal Pending JPS62182172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2093086A JPS62182172A (en) 1986-01-31 1986-01-31 Method of joining ceramics to metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2093086A JPS62182172A (en) 1986-01-31 1986-01-31 Method of joining ceramics to metal

Publications (1)

Publication Number Publication Date
JPS62182172A true JPS62182172A (en) 1987-08-10

Family

ID=12040932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2093086A Pending JPS62182172A (en) 1986-01-31 1986-01-31 Method of joining ceramics to metal

Country Status (1)

Country Link
JP (1) JPS62182172A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004074210A1 (en) * 1992-07-03 2004-09-02 Masanori Hirano Ceramics-metal composite body and method of producing the same
EP2851151A1 (en) * 2013-09-20 2015-03-25 Alstom Technology Ltd Method of fixing through brazing heat resistant component on a surface of a heat exposed component
WO2016056203A1 (en) * 2014-10-07 2016-04-14 Dowaメタルテック株式会社 Metal-ceramic circuit board and method of manufacturing same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004074210A1 (en) * 1992-07-03 2004-09-02 Masanori Hirano Ceramics-metal composite body and method of producing the same
EP2851151A1 (en) * 2013-09-20 2015-03-25 Alstom Technology Ltd Method of fixing through brazing heat resistant component on a surface of a heat exposed component
EP2851151B1 (en) 2013-09-20 2017-08-23 Ansaldo Energia IP UK Limited Method of fixing through brazing a heat resistant component on a surface of a heat exposed component
WO2016056203A1 (en) * 2014-10-07 2016-04-14 Dowaメタルテック株式会社 Metal-ceramic circuit board and method of manufacturing same
JP2016074565A (en) * 2014-10-07 2016-05-12 Dowaメタルテック株式会社 Metal-ceramic circuit board and method for producing the same

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