JP4191860B2 - Ceramic circuit board - Google Patents

Ceramic circuit board Download PDF

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Publication number
JP4191860B2
JP4191860B2 JP30295099A JP30295099A JP4191860B2 JP 4191860 B2 JP4191860 B2 JP 4191860B2 JP 30295099 A JP30295099 A JP 30295099A JP 30295099 A JP30295099 A JP 30295099A JP 4191860 B2 JP4191860 B2 JP 4191860B2
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circuit board
metal
ceramic substrate
ceramic
metal circuit
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JP30295099A
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JP2001127384A (en
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広一朗 菅井
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Kyocera Corp
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Kyocera Corp
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Description

【0001】
【発明の属する技術分野】
本発明は、セラミック基板に金属回路板をロウ付けにより接合したセラミック回路基板に関するものである。
【0002】
【従来の技術】
近年、パワーモジュール用基板やスイッチングモジュール用基板等の回路基板として、セラミック基板上に被着させたメタライズ金属層に銀ー銅合金等のロウ材を介して銅等から成る金属回路板を接合させたセラミック回路基板、あるいはセラミック基板上に銀ー銅共晶合金にチタン、ジルコニウム、ハフニウムまたはその水素化物を添加した活性金属ロウ材を介して銅等から成る金属回路板を直接接合させたセラミック回路基板が用いられている。
【0003】
かかるセラミック回路基板、例えば、セラミック基板上に被着させたメタライズ金属層にロウ材を介して銅等から成る金属回路板を接合させたセラミック回路基板は、一般に酸化アルミニウム質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結体、ムライト質焼結体等の電気絶縁性のセラミックス材料から成るセラミック基板の表面にメタライズ金属層を被着させておき、該メタライズ金属層に銅等の金属材料からなる金属回路板を銀ロウ等のロウ材を介しロウ付けすることによって形成されており、具体的には、例えば、セラミック基板が酸化アルミニウム質焼結体からなる場合には、酸化アルミニウム、酸化珪素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機バインダー、可塑剤、溶剤等を添加混合して泥漿状と成すとともにこれを従来周知のドクターブレード法やカレンダーロール法等のテープ成形技術を採用して複数のセラミックグリーンシートを得、次に前記セラミックグリーンシート上にタングステンやモリブデン等の高融点金属粉末に適当な有機バインダー、可塑剤、溶剤を添加混合して得た金属ペーストをスクリーン印刷法等の厚膜形成技術を採用することによって所定パターンに印刷塗布し、次に前記金属ペーストが所定パターンに印刷塗布されたセラミックグリーンシートを必要に応じて上下に積層するとともに還元雰囲気中、約1600℃の温度で焼成し、セラミックグリーンシートと金属ペーストを焼結一体化させて表面にメタライズ金属層を有する酸化アルミニウム質焼結体から成るセラミック基板を形成し、最後に前記セラミック基板表面のメタライズ金属層上に銅等から成る所定パターンの金属回路板を間に銀ロウ等のロウ材を挟んで載置させるとともにこれを還元雰囲気中、約900℃の温度に加熱してロウ材を溶融させ、該溶融したロウ材でメタライズ金属層と金属回路板とを接合することによって製作されている。
【0004】
なお、前記メタライズ金属層及び金属回路板の露出表面には酸化腐蝕を有効に防止するとともに金属回路板に半導体素子等の電子部品を半田等の接着材を介して強固に接続させるために、ニッケル等の耐蝕性に優れ、かつ半田等の接着材に対し濡れ性が良い金属がメッキ法等の技術を用いることによって所定厚みに被着されている。
【0005】
また前記金属回路板への電子部品の接続は、まず金属回路板上に半田粉末に有機溶剤、溶媒を添加混合して形成した半田ペーストを従来周知のスクリーン印刷法等の印刷技術を用いることによって所定パターンに印刷塗布し、次にこの印刷塗布した半田ペースト上に電子部品の電極を載置当接させ、しかる後、これを所定温度(約180℃)に加熱し、半田ペーストの有機溶剤,溶媒等を揮散させるとともに半田を溶融させ、該溶融した半田により金属回路板と電子部品の電極とを接合させることによって行われている。
【0006】
【発明が解決しようとする課題】
しかしながら、この従来のセラミック回路基板においては、セラミック基板の熱膨張係数が約3ppm/℃〜7ppm/℃(酸化アルミニウム質焼結体:約7ppm/℃、窒化アルミニウム質焼結体:約4ppm/℃、窒化珪素質焼結体:約3ppm/℃)であるのに対し、銅やアルミニウム等からなる金属回路板の熱膨張係数が約18ppm/℃〜23ppm/℃((銅:約18ppm/℃、アルミニウム:約23ppm/℃)であり、セラミック基板と金属回路板の熱膨張係数が大きく相違することからセラミック基板の上面に被着させたメタライズ金属層に金属回路板を銀ロウ等のロウ材を介して取着する際、セラミック基板と金属回路板との間に両者の熱膨張係数の相違に起因する大きな応力が発生するとともにこれが金属回路板の外周部に集中してしまい、その結果、金属回路板の外周部が位置する領域のセラミック基板に深さ方向に向かってクラックが発生するとともに成長してセラミック基板に割れを生じてしまうという欠点を有していた。
【0007】
本発明は上記欠点に鑑み案出されたもので、その目的はセラミック基板に割れが発生するのを有効に防止し、半導体素子等の電子部品を信頼性よく、安定して作動させることができるセラミック回路基板を提供することにある。
【0008】
本発明は、セラミック基板の上面に該セラミック基板よりも熱膨張係数の大きい金属から成る金属回路板を接合したセラミック回路基板であって、前記セラミック基板の上面より該セラミック基板の厚みの1/3以内内側の距離Aの位置に、電気的に独立したメタライズ層を配設し、メタライズ層の外周を、前記金属回路板の外周より距離A小さい領域よりも大きく、かつ前記金属回路板の外周よりも小さくしたことを特徴とするものである。
【0009】
また本発明は、前記メタライズ層の厚みが5μm乃至50μmであることを特徴とするものである。
【0010】
本発明のセラミック回路基板によれば、セラミック基板の上面より該セラミック基板の厚みの1/3以内内側の距離Aにメタライズ層を配設するとともに、該メタライズ層の外周を前記金属回路板の外周より距離A小さい領域よりも大きく形成したことから、セラミック基板と金属回路板との熱膨張係数の相違に起因して発生する大きな応力によって金属回路板の外周部が位置する領域のセラミック基板に深さ方向に向かってクラックが発生したとしても、該クラックは前記メタライズ層によりその成長が有効に阻止され、その結果、セラミック基板に割れが発生することはない。従って、本発明のセラミック回路基板は金属回路板上に電子部品の電極を確実強固に電気的接続することができるとともに該金属回路板に接続された電子部品を長期間にわたり正常、かつ安定に作動させることが可能となる。
【0011】
【発明の実施の形態】
次に、本発明を添付図面に示す実施例に基づいて詳細に説明する。
図1は、本発明のセラミック回路基板の一実施例の断面図を示し、1はセラミック基板、2はメタライズ金属層、3は金属回路板である。
【0012】
前記セラミック基板1は四角形状をなし、その上面にメタライズ金属層2が被着されており、該メタライズ金属層2には金属回路板3がロウ付けされている。
【0013】
前記セラミック基板1は金属回路板3を支持する支持部材として作用し、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、ムライト質焼結体等の電気絶縁材料で形成されている。
【0014】
前記セラミック基板1は、例えば、酸化アルミニウム質焼結体で形成されている場合は、酸化アルミニウム、酸化珪素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機バインダー、可塑剤、溶剤を添加混合して泥漿状となすとともに該泥漿物を従来周知のドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート(セラミック生シート)を形成し、次に前記セラミックグリーンシートに適当な打ち抜き加工を施し、所定形状となすとともに必要に応じて複数枚を積層して成形体となし、しかる後、これを約1600℃の高温で焼成することによって、あるいは酸化アルミニウム等の原料粉末に適当な有機溶剤、溶媒を添加混合して原料粉末を調整するとともに該原料粉末をプレス成形技術によって所定形状に成形し、しかる後、前記成形体を約1600℃の高温で焼成することによって製作される。
【0015】
また前記セラミック基板1はその表面にメタライズ金属層2が被着されており、該メタライズ金属層2は金属回路板3をセラミック基板1にロウ付けする際の下地金属層として作用する。
【0016】
前記メタライズ金属層2は、タングステン、モリブデン、マンガン等の高融点金属材料より成り、例えば、タングステン粉末に適当な有機バインダー、可塑材、溶剤を添加混合して得た金属ペーストを焼成によってセラミック基板1となるセラミックグリーンシート(セラミック生シート)の表面に予め従来周知のスクリーン印刷法により所定パターンに印刷塗布しておくことによってセラミック基板1の上面に所定パターン、所定厚み(10〜50μm)に被着される。
【0017】
なお、前記メタライズ金属層2はその表面にニッケル、金等の良導電性で、耐蝕性及びロウ材との濡れ性が良好な金属をメッキ法により1μm〜20μmの厚みに被着させておくと、メタライズ金属層2の酸化腐蝕を有効に防止することができるとともにメタライズ金属層2と金属回路板3とのロウ付けを極めて強固となすことができる。従って、前記メタライズ金属層2の酸化腐蝕を有効に防止し、メタライズ金属層2と金属回路板3とのロウ付けを強固となすにはメタライズ金属層2の表面にニッケル、金等の良導電性で、耐蝕性及びロウ材との濡れ性が良好な金属を1μm〜20μmの厚みに被着させておくことが好ましい。
【0018】
また、前記メタライズ金属層2はその上面に金属回路板3がロウ材を介して取着されている。
【0019】
前記金属回路板3は銅やアルミニウム等の金属材料から成り、セラミック基板1の表面に形成されたメタライズ金属層2上に金属回路板3を、例えば、銀ロウ材(銀:72重量%、銅:28重量%)やアルミニウムロウ材(アルミニウム:88重量%、シリコン:12重量%)等から成るロウ材を挟んで載置させ、しかる後、これを真空中もしくは中性、還元雰囲気中、所定温度(銀ロウ材の場合は約900℃、アルミニウムロウ材の場合は約600℃)で加熱処理し、ロウ材を溶融せしめるとともにメタライズ金属層2の上面と金属回路板3の下面とに接合させることによってセラミック基板1の表面に取着されることとなる。
【0020】
前記銅やアルミニウム等から成る金属回路板3は、銅やアルミニウム等のインゴット(塊)に圧延加工方や打ち抜き加工法等、従来周知の金属加工法を施すことによって、例えば、厚さが500μmで、メタライズ金属層2のパターン形状に対応する所定パターン形状に製作される。
【0021】
前記金属回路板3はまた銅から成る場合、金属回路板3を無酸素銅で形成しておくと、該無酸素銅はロウ付けの際に銅の表面が銅中に存在する酸素により酸化されることなくロウ材との濡れ性が良好となり、メタライズ金属層2へのロウ材を介しての接合が強固となる。従って、前記金属回路板3はこれを無酸素銅で形成しておくことが好ましい。
【0022】
更に前記金属回路板3はその表面にニッケルから成る良導電性で、かつ耐蝕性及びロウ材との濡れ性が良好な金属をメッキ法により被着させておくと、金属回路板3と外部電気回路との電気的接続を良好と成すとともに金属回路板3に半導体素子等の電子部品を半田を介して強固に接着させることができる。従って、前記金属回路板3はその表面にニッケルからなる良導電性で、かつ耐蝕性及びロウ材との濡れ性が良好な金属をメッキ法により被着させておくことが好ましい。
【0023】
前記金属回路板3の表面にニッケルから成るメッキ層を被着させる場合、内部に燐を8〜15重量%含有させたニッケルー燐のアモルファス合金としておくとニッケルから成るメッキ層の表面酸化を良好に防止してロウ材との濡れ性等を長く維持することができる。従って、前記金属回路板3の表面にニッケルから成るメッキ層を被着させる場合、内部に燐を8〜15重量%含有させてニッケルー燐のアモルファス合金としておくことが好ましい。
【0024】
なお、前記金属回路板3の表面にニッケルー燐のアモルファス合金から成るメッキ層を被着させる場合、ニッケルに対する燐の含有量が8重量%未満、あるいは15重量%を超えたときニッケルー燐のアモルファス合金を形成するのが困難となってメッキ層に半田を強固に接着させることができなくなる危険性がある。
【0025】
従って、前記金属回路板3の表面にニッケルー燐のアモルファス合金から成るメッキ層を被着させる場合にはニッケルに対する燐の含有量を8〜15重量%の範囲としておくことが好ましく、好適には10〜15重量%の範囲がよい。
【0026】
また更に、前記金属回路板3の表面に被着されるニッケルから成るメッキ層は、その厚みが1.5μm未満の場合、金属回路板3の表面をニッケルから成るメッキ層で完全に被覆することができず、金属回路板3の酸化腐蝕を有効に防止することができなくなる危険性があり、また3μmを超えるとニッケルから成るメッキ層の内部に内在する内在応力が大きくなってセラミック基板1に反りや割れ等が発生してしまう。特にセラミック基板1の厚さが700μm以下の薄いものになった場合にはこのセラミック基板1の反りや割れ等が顕著となってしまう。
【0027】
従って、前記金属回路板3の表面に被着されるニッケルから成るメッキ層はその厚みを1.5μm〜3μmの範囲としておくことが好ましい。
【0028】
前記上面に金属回路板3が取着されているセラミック基板1は更にその上面よりセラミック基板3の厚みの1/3以内で距離Aの位置にメタライズ層4が配設されており、該メタライズ層4はその外周が前記金属回路板3の外周より距離A小さい領域よりも大きく形成されている。そのためセラミック基板1の上面に被着させたメタライズ金属層2に金属回路板3を銀ロウ等のロウ材を介して取着する際、セラミック基板1と金属回路板3との間に両者の熱膨張係数の相違に起因する大きな応力が発生し、これが金属回路板3の外周部に集中して金属回路板3の外周部が位置する領域のセラミック基板1に深さ方向に向かってクラックが発生したとしても、該クラックは前記メタライズ層4によりその成長が有効に阻止され、その結果、セラミック基板1に割れが発生することはない。
【0029】
これはセラミック基板1の深さ方向に向かって発生するクラックは金属回路板3の外周部を起点にセラミック基板1の深さ方向に45°より低い角度で展進するため、セラミック基板1の上面より距離Aの位置に、前記金属回路板3の外周よりも距離A小さい領域よりも大きくメタライズ層4を形成しておけばメタライズ層4でクラックの進展を確実に受け止めることができるためである。
【0030】
前記メタライズ層4は前記メタライズ金属層2と同様の材料、方法によってセラミック基板1の上面より距離Aの位置に、その外周が前記金属回路板3の外周より距離A小さい領域よりも大きく形成されている。
【0031】
なお、前記メタライズ層4はセラミック基板1の厚みに対し1/3を超える位置に配設されているとメタライズ層4まで進展したクラックによってセラミック基板1の機械的強度が著しく低下し、セラミック回路基板としての信頼性が無くなる。従って、前記メタライズ層4はセラミック基板1の上面から該セラミック基板1の厚みに対し1/3以内の範囲に配設されることに特定される。
【0032】
また前記メタライズ層4は前記金属回路板3の外周よりも距離A小さい領域よりも小さく形成しておくと金属回路板3の外周部を起点に発生し、セラミック基板1の深さ方向に45°より低い角度で展進するクラックをを確実に受け止めることができなくなってセラミック基板1に割れが生じてしまう。従って、前記メタライズ層4は前記金属回路板3の外周よりも距離A小さい領域よりも大きく形成しておくことに特定される。
【0033】
更に、前記メタライズ層4はその厚みが5μm未満なるとメタライズ層5でクラックの進展を有効に防止するのが困難となる傾向にあり、また50μmを超えるとメタライズ層4と絶縁基体1との間に剥離等が発生してしまう危険性がある。従って、前記メタライズ層4はその厚みを5μm乃至50μmの範囲としておくことが好ましい。
【0034】
かくして、上述のセラミック回路基板によれば、セラミック基板1の上面に取着された金属回路板3に半田等の接着材を介して半導体素子等の電子部品を接着固着させ、半導体素子等の電極をボンディングワイヤ等の電気的接続手段を介して金属回路板3に電気的に接続させれば半導体素子等の電子部品はセラミック回路基板に実装され、金属回路板3を介して外部電気回路と接続される。
【0035】
なお、本発明は上述の実施例に限定されるものではなく、本発明の趣旨を逸脱しない範囲であれば種々の変更は可能であり、例えば、上述の実施例ではセラミック基板1がアルミニウム質焼結体で形成された例を示したが、電子部品が多量の熱を発し、この熱を効率良く除去したい場合にはセラミック基板1を熱伝導率の高い窒化アルミニウム質焼結体や窒化珪素質焼結体で形成すれば良く、金属回路板3に高速で電気信号を伝播させたい場合にはセラミック基板1を誘電率の低いムライト質焼結体で形成すれば良い。
【0036】
さらに、上述の実施例ではセラミック基板1の表面に予めメタライズ金属2を被着させておき、該メタライズ金属層2に金属回路板3をロウ付けしてセラミック回路基板となしたが、これをセラミック基板1の表面に、例えば、銀−銅共晶合金にチタンもしくは水素化チタンを2〜5重量%添加した活性金属ロウ材を介して直接金属回路板3を取着させてセラミック回路基板を形成してもよい。
【0037】
【発明の効果】
本発明のセラミック回路基板によれば、セラミック基板の上面より該セラミック基板の厚みの1/3以内内側の距離Aにメタライズ層を配設するとともに、該メタライズ層の外周を前記金属回路板の外周より距離A小さい領域よりも大きく形成したことから、セラミック基板と金属回路板との熱膨張係数の相違に起因して発生する大きな応力によって金属回路板の外周部が位置する領域のセラミック基板に深さ方向に向かってクラックが発生したとしても、該クラックは前記メタライズ層によりその成長が有効に阻止され、その結果、セラミック基板に割れが発生することはない。従って、本発明のセラミック回路基板は金属回路板上に電子部品の電極を確実強固に電気的接続することができるとともに該金属回路板に接続された電子部品を長期間にわたり正常、かつ安定に作動させることが可能となる。
【図面の簡単な説明】
【図1】本発明のセラミック回路基板の一実施例を示す断面図である。
【符号の説明】
1・・・・セラミック基板
2・・・・メタライズ金属層
3・・・・金属回路板
4・・・・メタライズ層
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a ceramic circuit board in which a metal circuit board is joined to a ceramic board by brazing.
[0002]
[Prior art]
In recent years, a metal circuit board made of copper or the like is bonded to a metallized metal layer deposited on a ceramic substrate through a brazing material such as a silver-copper alloy as a circuit board such as a power module substrate or a switching module substrate. Ceramic circuit board or ceramic circuit in which a metal circuit board made of copper or the like is directly joined to the ceramic board via an active metal brazing material in which titanium, zirconium, hafnium or a hydride thereof is added to a silver-copper eutectic alloy. A substrate is used.
[0003]
Such a ceramic circuit board, for example, a ceramic circuit board in which a metal circuit board made of copper or the like is bonded to a metallized metal layer deposited on the ceramic board via a brazing material is generally an aluminum oxide sintered body, aluminum nitride A metallized metal layer is deposited on the surface of a ceramic substrate made of an electrically insulating ceramic material such as a sintered carbonaceous material, a silicon nitride sintered material, and a mullite sintered material, and copper or the like is applied to the metalized metal layer. It is formed by brazing a metal circuit board made of a metal material through a brazing material such as silver brazing. Specifically, for example, when the ceramic substrate is made of an aluminum oxide sintered body, aluminum oxide is used. Add appropriate organic binder, plasticizer, solvent, etc. to raw powder such as silicon oxide, magnesium oxide, calcium oxide, etc. Along with this, a plurality of ceramic green sheets are obtained by adopting a tape forming technique such as a doctor blade method or a calender roll method that is conventionally known, and then suitable for refractory metal powders such as tungsten and molybdenum on the ceramic green sheet. A metal paste obtained by adding and mixing an organic binder, a plasticizer, and a solvent is printed and applied in a predetermined pattern by employing a thick film forming technique such as a screen printing method, and then the metal paste is printed and applied in a predetermined pattern. The ceramic green sheets are stacked one above the other as needed and fired in a reducing atmosphere at a temperature of about 1600 ° C., and the ceramic green sheets and metal paste are sintered and integrated to have a metallized metal layer on the surface. A ceramic substrate made of a sintered body is formed, and finally the ceramic is A metal circuit board having a predetermined pattern made of copper or the like is placed on the metallized metal layer on the surface of the substrate with a brazing material such as silver solder interposed therebetween, and this is heated to a temperature of about 900 ° C. in a reducing atmosphere. It is manufactured by melting a material and joining a metallized metal layer and a metal circuit board with the melted brazing material.
[0004]
The exposed surfaces of the metallized metal layer and the metal circuit board are nickel nickel to effectively prevent oxidative corrosion and to firmly connect electronic components such as semiconductor elements to the metal circuit board via an adhesive such as solder. A metal having excellent corrosion resistance such as solder and wettability with respect to an adhesive such as solder is applied to a predetermined thickness by using a technique such as plating.
[0005]
The electronic component is connected to the metal circuit board by first using a printing technique such as a well-known screen printing method with a solder paste formed by adding an organic solvent and a solvent to the solder powder on the metal circuit board. A printed pattern is printed and applied, and then the electrodes of the electronic component are placed on and abutted on the printed and applied solder paste, and then heated to a predetermined temperature (about 180 ° C.), and the solder paste organic solvent, It is performed by volatilizing the solvent and the like, melting the solder, and joining the metal circuit board and the electrode of the electronic component with the melted solder.
[0006]
[Problems to be solved by the invention]
However, in this conventional ceramic circuit substrate, the thermal expansion coefficient of the ceramic substrate is about 3 ppm / ° C. to 7 ppm / ° C. (aluminum oxide sintered body: about 7 ppm / ° C., aluminum nitride based sintered body: about 4 ppm / ° C. The silicon nitride-based sintered body is about 3 ppm / ° C., whereas the thermal expansion coefficient of the metal circuit board made of copper, aluminum or the like is about 18 ppm / ° C. to 23 ppm / ° C. ((copper: about 18 ppm / ° C., (Aluminum: about 23 ppm / ° C), and the thermal expansion coefficients of the ceramic substrate and the metal circuit board are greatly different. Therefore, the metal circuit board is attached to the metallized metal layer deposited on the upper surface of the ceramic substrate with a brazing material such as silver brazing. When attaching to the metal circuit board, a large stress is generated between the ceramic substrate and the metal circuit board due to the difference in thermal expansion coefficient between the two. As a result, the ceramic substrate in the region where the outer peripheral portion of the metal circuit board is located is cracked in the depth direction and grows to cause cracks in the ceramic substrate. Had.
[0007]
The present invention has been devised in view of the above drawbacks, and its purpose is to effectively prevent the ceramic substrate from cracking, and to operate electronic components such as semiconductor elements reliably and stably. It is to provide a ceramic circuit board.
[0008]
The present invention is a ceramic circuit board in which a metal circuit board made of a metal having a thermal expansion coefficient larger than that of the ceramic substrate is bonded to the upper surface of the ceramic substrate, and is 1/3 of the thickness of the ceramic substrate from the upper surface of the ceramic substrate. An electrically independent metallized layer is disposed at the position of the inner distance A, and the outer periphery of the metallized layer is larger than the area smaller than the outer periphery of the metal circuit board by the distance A and the outer periphery of the metal circuit board. It is characterized by being made smaller .
[0009]
Further, the present invention is characterized in that the metallized layer has a thickness of 5 μm to 50 μm.
[0010]
According to the ceramic circuit board of the present invention, the metallized layer is disposed at a distance A that is within 1/3 of the thickness of the ceramic substrate from the upper surface of the ceramic substrate, and the outer periphery of the metalized layer is the outer periphery of the metal circuit board. Since the distance A is larger than the smaller region, the ceramic substrate and the metal circuit board are deeply formed in the region where the outer peripheral portion of the metal circuit board is located due to the large stress generated due to the difference in thermal expansion coefficient between the ceramic board and the metal circuit board. Even if a crack is generated in the vertical direction, the growth of the crack is effectively prevented by the metallized layer, and as a result, no crack is generated in the ceramic substrate. Therefore, the ceramic circuit board of the present invention can securely and securely connect the electrodes of the electronic component on the metal circuit board, and the electronic component connected to the metal circuit board can operate normally and stably over a long period of time. It becomes possible to make it.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail based on embodiments shown in the accompanying drawings.
FIG. 1 shows a cross-sectional view of an embodiment of the ceramic circuit board of the present invention, wherein 1 is a ceramic substrate, 2 is a metallized metal layer, and 3 is a metal circuit board.
[0012]
The ceramic substrate 1 has a rectangular shape, and a metallized metal layer 2 is deposited on the upper surface thereof, and a metal circuit board 3 is brazed to the metallized metal layer 2.
[0013]
The ceramic substrate 1 acts as a support member for supporting the metal circuit board 3, and is an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, and a mullite sintered body. It is made of an electrically insulating material such as
[0014]
For example, when the ceramic substrate 1 is formed of an aluminum oxide sintered body, an appropriate organic binder, plasticizer, and solvent are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. Then, a ceramic green sheet (green ceramic sheet) is formed by adopting a conventionally well-known doctor blade method or calendar roll method, and then a suitable punching process is performed on the ceramic green sheet. And forming a molded body by laminating a plurality of sheets as necessary, and then firing the molded body at a high temperature of about 1600 ° C., or an organic solvent suitable for a raw material powder such as aluminum oxide Add and mix the solvent to adjust the raw material powder and apply the raw material powder to press molding technology It was molded into a predetermined shape, and thereafter, is manufactured by firing the molded body at a high temperature of about 1600 ° C..
[0015]
The ceramic substrate 1 has a metallized metal layer 2 deposited on the surface thereof, and the metallized metal layer 2 functions as a base metal layer when the metal circuit board 3 is brazed to the ceramic substrate 1.
[0016]
The metallized metal layer 2 is made of a refractory metal material such as tungsten, molybdenum, manganese, etc. For example, a ceramic paste is obtained by firing a metal paste obtained by adding and mixing an appropriate organic binder, plasticizer, and solvent to tungsten powder. A predetermined pattern and a predetermined thickness (10 to 50 μm) are deposited on the upper surface of the ceramic substrate 1 by applying a predetermined pattern to the surface of the ceramic green sheet (ceramic green sheet) in advance by a well-known screen printing method. Is done.
[0017]
The metallized metal layer 2 is formed by depositing a metal having good conductivity such as nickel and gold and having good corrosion resistance and wettability with a brazing material to a thickness of 1 μm to 20 μm by plating. Further, the oxidative corrosion of the metallized metal layer 2 can be effectively prevented, and the brazing between the metallized metal layer 2 and the metal circuit board 3 can be extremely strengthened. Therefore, in order to effectively prevent the oxidative corrosion of the metallized metal layer 2 and to strengthen the brazing between the metallized metal layer 2 and the metal circuit board 3, the surface of the metallized metal layer 2 has good conductivity such as nickel and gold. Thus, it is preferable to deposit a metal having good corrosion resistance and wettability with the brazing material to a thickness of 1 μm to 20 μm.
[0018]
The metallized metal layer 2 has a metal circuit board 3 attached to the upper surface thereof via a brazing material.
[0019]
The metal circuit board 3 is made of a metal material such as copper or aluminum, and the metal circuit board 3 is formed on the metallized metal layer 2 formed on the surface of the ceramic substrate 1, for example, a silver brazing material (silver: 72% by weight, copper : 28% by weight) or aluminum brazing material (aluminum: 88% by weight, silicon: 12% by weight), etc., and then placed, and after that, in vacuum or in a neutral or reducing atmosphere Heat treatment is performed at a temperature (about 900 ° C. for silver brazing material and about 600 ° C. for aluminum brazing material) to melt the brazing material and bond it to the upper surface of the metallized metal layer 2 and the lower surface of the metal circuit board 3. As a result, it is attached to the surface of the ceramic substrate 1.
[0020]
The metal circuit board 3 made of copper, aluminum, or the like has a thickness of, for example, 500 μm by applying a conventionally known metal processing method such as a rolling method or a punching method to an ingot (lumb) such as copper or aluminum. A predetermined pattern shape corresponding to the pattern shape of the metallized metal layer 2 is manufactured.
[0021]
When the metal circuit board 3 is also made of copper, if the metal circuit board 3 is made of oxygen-free copper, the oxygen-free copper is oxidized by oxygen present in the copper during brazing. Therefore, the wettability with the brazing material is improved, and the bonding to the metallized metal layer 2 through the brazing material is strengthened. Therefore, the metal circuit board 3 is preferably formed of oxygen-free copper.
[0022]
Further, when the metal circuit board 3 is coated with a metal having good conductivity made of nickel and having good corrosion resistance and wettability with a brazing material on the surface thereof, the metal circuit board 3 and the external electric circuit 3 are connected. The electrical connection with the circuit is good, and an electronic component such as a semiconductor element can be firmly bonded to the metal circuit board 3 via solder. Therefore, it is preferable that the metal circuit board 3 is coated with a metal having good conductivity made of nickel and having good corrosion resistance and wettability with the brazing material on the surface thereof.
[0023]
In the case where a plating layer made of nickel is deposited on the surface of the metal circuit board 3, if the nickel-phosphorus amorphous alloy containing phosphorus in an amount of 8 to 15% by weight is formed, surface oxidation of the plating layer made of nickel is improved. Thus, the wettability with the brazing material can be maintained for a long time. Therefore, when a plating layer made of nickel is applied to the surface of the metal circuit board 3, it is preferable to contain 8 to 15% by weight of phosphorus inside to form a nickel-phosphorus amorphous alloy.
[0024]
When a plating layer made of a nickel-phosphorus amorphous alloy is applied to the surface of the metal circuit board 3, the nickel-phosphorus amorphous alloy is used when the phosphorus content relative to nickel is less than 8% by weight or more than 15% by weight. There is a risk that it becomes difficult to form solder and the solder cannot be firmly adhered to the plating layer.
[0025]
Accordingly, when a plating layer made of an amorphous alloy of nickel-phosphorus is applied on the surface of the metal circuit board 3, the phosphorus content relative to nickel is preferably in the range of 8 to 15% by weight, preferably 10 A range of ˜15% by weight is preferred.
[0026]
Furthermore, when the thickness of the plating layer made of nickel deposited on the surface of the metal circuit board 3 is less than 1.5 μm, the surface of the metal circuit board 3 is completely covered with the plating layer made of nickel. And there is a risk that the oxidative corrosion of the metal circuit board 3 cannot be effectively prevented. When the thickness exceeds 3 μm, the internal stress in the plated layer made of nickel increases, and the ceramic substrate 1 Warpage or cracking will occur. In particular, when the thickness of the ceramic substrate 1 is as thin as 700 μm or less, warping or cracking of the ceramic substrate 1 becomes remarkable.
[0027]
Therefore, the plating layer made of nickel deposited on the surface of the metal circuit board 3 preferably has a thickness in the range of 1.5 μm to 3 μm.
[0028]
The ceramic substrate 1 to which the metal circuit board 3 is attached on the upper surface is further provided with a metallized layer 4 at a distance A within 1/3 of the thickness of the ceramic substrate 3 from the upper surface. 4 is formed so that the outer periphery thereof is larger than the region where the distance A is smaller than the outer periphery of the metal circuit board 3. Therefore, when the metal circuit board 3 is attached to the metallized metal layer 2 deposited on the upper surface of the ceramic substrate 1 via a brazing material such as silver brazing, the heat of both of the ceramic substrate 1 and the metal circuit board 3 is heated. A large stress is generated due to the difference in the expansion coefficient, which is concentrated on the outer peripheral portion of the metal circuit board 3 and cracks are generated in the depth direction in the ceramic substrate 1 in the region where the outer peripheral portion of the metal circuit board 3 is located. Even so, the growth of the crack is effectively prevented by the metallized layer 4, and as a result, no crack is generated in the ceramic substrate 1.
[0029]
This is because cracks generated in the depth direction of the ceramic substrate 1 develop at an angle lower than 45 ° in the depth direction of the ceramic substrate 1 starting from the outer peripheral portion of the metal circuit board 3. This is because if the metallized layer 4 is formed at a position of a distance A larger than the region A smaller than the outer periphery of the metal circuit board 3, the metallized layer 4 can reliably catch the progress of cracks.
[0030]
The metallized layer 4 is formed at the position of the distance A from the upper surface of the ceramic substrate 1 by the same material and method as the metallized metal layer 2, and the outer periphery thereof is larger than the region where the distance A is smaller than the outer periphery of the metal circuit board 3. Yes.
[0031]
If the metallized layer 4 is disposed at a position exceeding 1/3 of the thickness of the ceramic substrate 1, the mechanical strength of the ceramic substrate 1 is remarkably lowered by cracks extending to the metallized layer 4. The reliability as is lost. Therefore, the metallized layer 4 is specified to be disposed within a range of 1 / from the upper surface of the ceramic substrate 1 with respect to the thickness of the ceramic substrate 1.
[0032]
Further, if the metallized layer 4 is formed smaller than a region having a distance A smaller than the outer periphery of the metal circuit board 3, the metallized layer 4 starts from the outer periphery of the metal circuit board 3 and is 45 ° in the depth direction of the ceramic substrate 1. A crack that develops at a lower angle cannot be reliably received, and the ceramic substrate 1 is cracked. Therefore, it is specified that the metallized layer 4 is formed larger than a region having a distance A smaller than the outer periphery of the metal circuit board 3.
[0033]
Further, if the thickness of the metallized layer 4 is less than 5 μm, it tends to be difficult to effectively prevent the cracks from developing in the metallized layer 5, and if the thickness exceeds 50 μm, the metallized layer 4 is between the metalized layer 4 and the insulating substrate 1. There is a risk of peeling. Therefore, it is preferable that the metallized layer 4 has a thickness in the range of 5 μm to 50 μm.
[0034]
Thus, according to the above-described ceramic circuit board, an electronic component such as a semiconductor element is bonded and fixed to the metal circuit board 3 attached to the upper surface of the ceramic substrate 1 via an adhesive such as solder, so that an electrode such as a semiconductor element is formed. Is electrically connected to the metal circuit board 3 via an electrical connection means such as a bonding wire, and electronic components such as semiconductor elements are mounted on the ceramic circuit board and connected to an external electric circuit via the metal circuit board 3. Is done.
[0035]
It should be noted that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. For example, in the above-described embodiments, the ceramic substrate 1 is made of an aluminum-based ceramic. In the example shown in the figure, the electronic component generates a large amount of heat, and when it is desired to efficiently remove this heat, the ceramic substrate 1 is made of an aluminum nitride sintered body or silicon nitride having high thermal conductivity. The ceramic substrate 1 may be formed of a mullite sintered body having a low dielectric constant when the electric signal is to be propagated through the metal circuit board 3 at a high speed.
[0036]
Further, in the above-described embodiment, the metallized metal 2 is previously deposited on the surface of the ceramic substrate 1, and the metal circuit board 3 is brazed to the metallized metal layer 2 to form a ceramic circuit substrate. A ceramic circuit board is formed on the surface of the substrate 1 by directly attaching the metal circuit board 3 through an active metal brazing material in which, for example, 2-5% by weight of titanium or titanium hydride is added to a silver-copper eutectic alloy. May be.
[0037]
【The invention's effect】
According to the ceramic circuit board of the present invention, the metallized layer is disposed at a distance A that is within 1/3 of the thickness of the ceramic substrate from the upper surface of the ceramic substrate, and the outer periphery of the metalized layer is the outer periphery of the metal circuit board. Since the distance A is larger than the smaller region, the ceramic substrate and the metal circuit board are deeply formed in the region where the outer peripheral portion of the metal circuit board is located due to the large stress generated due to the difference in thermal expansion coefficient between the ceramic board and the metal circuit board. Even if a crack is generated in the vertical direction, the growth of the crack is effectively prevented by the metallized layer, and as a result, no crack is generated in the ceramic substrate. Therefore, the ceramic circuit board of the present invention can securely and securely connect the electrodes of the electronic component on the metal circuit board, and the electronic component connected to the metal circuit board can operate normally and stably over a long period of time. It becomes possible to make it.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of a ceramic circuit board according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Metallized metal layer 3 ... Metal circuit board 4 ... Metallized layer

Claims (2)

セラミック基板の上面に該セラミック基板よりも熱膨張係数の大きい金属から成る金属回路板を接合したセラミック回路基板であって、前記セラミック基板の上面より該セラミック基板の厚みの1/3以内内側の距離Aの位置に、電気的に独立したメタライズ層を配設し、メタライズ層の外周を、前記金属回路板の外周より距離A小さい領域よりも大きく、かつ前記金属回路板の外周よりも小さくしたセラミック回路基板。A ceramic circuit board in which a metal circuit board made of a metal having a thermal expansion coefficient larger than that of the ceramic substrate is bonded to the upper surface of the ceramic substrate, and is a distance within one third of the thickness of the ceramic substrate from the upper surface of the ceramic substrate An electrically independent metallization layer is disposed at the position A, and the outer periphery of the metallization layer is larger than the region smaller than the outer periphery of the metal circuit board by the distance A and smaller than the outer periphery of the metal circuit board. Ceramic circuit board. 前記メタライズ層の厚みが5μm乃至50μmであることを特徴とする請求項1に記載のセラミック回路基板。  The ceramic circuit board according to claim 1, wherein the metallized layer has a thickness of 5 μm to 50 μm.
JP30295099A 1999-10-25 1999-10-25 Ceramic circuit board Expired - Fee Related JP4191860B2 (en)

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