JP2001339155A - Ceramic circuit board - Google Patents

Ceramic circuit board

Info

Publication number
JP2001339155A
JP2001339155A JP2000158696A JP2000158696A JP2001339155A JP 2001339155 A JP2001339155 A JP 2001339155A JP 2000158696 A JP2000158696 A JP 2000158696A JP 2000158696 A JP2000158696 A JP 2000158696A JP 2001339155 A JP2001339155 A JP 2001339155A
Authority
JP
Japan
Prior art keywords
circuit board
metal
powder
brazing material
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000158696A
Other languages
Japanese (ja)
Other versions
JP4493158B2 (en
Inventor
Hidekazu Otomaru
秀和 乙丸
Kenichi Hashimoto
健一 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2000158696A priority Critical patent/JP4493158B2/en
Publication of JP2001339155A publication Critical patent/JP2001339155A/en
Application granted granted Critical
Publication of JP4493158B2 publication Critical patent/JP4493158B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a ceramic circuit board in which a metal circuit board can be bonded rigidly onto a ceramic board without causing any electric short circuit between adjacent metal circuit boards or any cracking in the ceramic board. SOLUTION: A metal circuit board 3 is fixed to the upper surface of a ceramic board 1 through an active metal solder material layer 2 to produce a ceramic circuit board. The active metal solder material layer 2 comprises solder material powder composed of silver powder and copper powder and/or silver-copper alloy powder, and active metal powder composed of at least one kind of titanium, zirconium, hafnium and hydrides thereof and containing 5-20 wt.% of metal powder 2a having a melting point of 1200 deg.C or above and a mean grain size of 1-10 μm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、セラミック基板に
金属回路板を活性金属ロウ材により接合したセラミック
回路基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board in which a metal circuit board is joined to a ceramic substrate using an active metal brazing material.

【0002】[0002]

【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に銀−銅共晶合金にチタン、ジルコニウム、ハ
フニウムまたはその水素化物を添加した活性金属ロウ材
を介して銅等から成る金属回路板を直接接合させたセラ
ミック回路基板が用いられている。
2. Description of the Related Art In recent years, as a circuit board such as a power module board or a switching module board, an active metal brazing material obtained by adding titanium, zirconium, hafnium or a hydride thereof to a silver-copper eutectic alloy on a ceramic substrate. There is used a ceramic circuit board in which a metal circuit board made of copper or the like is directly joined through an intermediary.

【0003】かかるセラミック回路基板は、一般にセラ
ミック基板として酸化アルミニウム質焼結体、窒化アル
ミニウム質焼結体、窒化珪素質焼結体、ムライト質焼結
体等の電気絶縁性のセラミックス材料が使用されてお
り、例えば、酸化アルミニウム質焼結体から成る場合に
は、具体的には以下の方法によって製作されている。
[0003] Such ceramic circuit boards are generally made of an electrically insulating ceramic material such as a sintered body of aluminum oxide, a sintered body of aluminum nitride, a sintered body of silicon nitride, or a sintered body of mullite as a ceramic substrate. For example, when it is made of an aluminum oxide sintered body, it is specifically manufactured by the following method.

【0004】即ち、 (1)まず、銀−銅合金にチタン、ジルコニウム、ハフ
ニウムおよびこれらの水素化物の少なくとも1種を添加
した活性金属粉末に有機溶剤、溶媒を添加混合してロウ
材ペーストを作製する。 (2)次に、酸化アルミニウム、酸化珪素、酸化マグネ
シウム、酸化カルシウム等のセラミック原料粉末に適当
な有機バインダー、可塑剤、溶剤等を添加混合して泥漿
状と成すとともにこれを従来周知のドクターブレード法
やカレンダーロール法等のテープ成形技術を採用して複
数のセラミックグリーンシートを得た後、所定寸法に形
成し、次に前記セラミックグリーンシートを必要に応じ
て上下に積層するとともに、還元雰囲気中、約1600
℃の温度で焼成し、セラミックグリーンシートを焼結一
体化させて酸化アルミニウム質焼結体から成るセラミッ
ク基板を形成する。 (3)次に、前記セラミック基板上に前記ロウ材ペース
トを間に挟んで銅等から成る所定パターンの金属回路板
を載置させる。 (4)そして最後に、前記セラミック基板と金属回路板
との間に配されているロウ材ペーストを還元雰囲気中で
約900℃の温度に加熱し、セラミック基板に活性金属
粉末を介して銀−銅合金からなるロウ材を接合させると
ともに該ロウ材を金属回路板に接合させることによって
セラミック回路基板が製作される。
[0004] (1) First, an organic solvent and a solvent are added to an active metal powder obtained by adding at least one of titanium, zirconium, hafnium and a hydride thereof to a silver-copper alloy to prepare a brazing material paste. I do. (2) Next, a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide is mixed with an appropriate organic binder, plasticizer, solvent and the like to form a slurry, which is then formed into a well-known doctor blade. After obtaining a plurality of ceramic green sheets by adopting a tape forming technique such as a method or a calendar roll method, forming the ceramic green sheets to a predetermined size, and then laminating the ceramic green sheets vertically as necessary, , About 1600
The ceramic green sheet is fired at a temperature of ° C., and the ceramic green sheets are sintered and integrated to form a ceramic substrate made of an aluminum oxide sintered body. (3) Next, a metal circuit board having a predetermined pattern made of copper or the like is placed on the ceramic substrate with the brazing material paste interposed therebetween. (4) Finally, the brazing material paste disposed between the ceramic substrate and the metal circuit board is heated to a temperature of about 900 ° C. in a reducing atmosphere, and the silver paste is applied to the ceramic substrate via the active metal powder. A ceramic circuit board is manufactured by joining a brazing material made of a copper alloy and joining the brazing material to a metal circuit board.

【0005】なお、前記活性金属ロウ材及び金属回路板
の露出表面には酸化腐蝕を有効に防止すると同時に金属
回路板に半導体素子等の電子部品を接着固定する半田等
の接着材との接合を強固にするため、ニッケル等の金属
がメッキ法等の技術を用いることによって被着されてい
る。
The active metal brazing material and the exposed surface of the metal circuit board are effectively bonded to an exposed surface of the metal circuit board with an adhesive such as solder for bonding and fixing electronic components such as semiconductor elements to the metal circuit board. Metals such as nickel are applied by using techniques such as plating to make them stronger.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、この従
来のセラミック回路基板においては、セラミック基板へ
の金属回路板の接合はセラミック基板上にロウ材ペース
トを挟んで銅等から成る所定パターンの金属回路板を載
置させた後、これを還元雰囲気中、約900℃の温度に
加熱することによって行われており、前記ロウ材ペース
トは液相線温度以上の温度で加熱されることから、ロウ
材の粘性が著しく低下して大きく熔け広がり、この熔け
広がったロウ材によって隣接する金属回路板間が電気的
に短絡するという欠点を有していた。
However, in this conventional ceramic circuit board, the bonding of the metal circuit board to the ceramic substrate is performed by a metal circuit board having a predetermined pattern made of copper or the like with a brazing material paste interposed therebetween. Is placed in a reducing atmosphere and heated to a temperature of about 900 ° C., and the brazing material paste is heated at a temperature equal to or higher than the liquidus temperature. Viscosity was remarkably reduced, and the molten metal spread greatly, and the melted and spreaded brazing material had a disadvantage of causing an electrical short circuit between adjacent metal circuit boards.

【0007】そこで上記欠点を解消するためにロウ材ペ
ーストの厚みを、例えば、10μm未満と薄くすること
が考えられる。
Therefore, in order to solve the above-mentioned drawback, it is conceivable to reduce the thickness of the brazing material paste to, for example, less than 10 μm.

【0008】しかしながら、ロウ材ペーストの厚みを薄
くすると、セラミック基板上に金属回路板を取着する
際、セラミック基板と金属回路板との間に発生する両者
の熱膨張係数の相違に起因する応力を前記ロウ材が有効
に吸収することができなくなり、その結果、前記応力に
よってセラミック基板にクラックや割れが発生するとい
う欠点が誘発されてしまう。
However, when the thickness of the brazing material paste is reduced, when the metal circuit board is mounted on the ceramic substrate, a stress generated between the ceramic substrate and the metal circuit board due to a difference in thermal expansion coefficient between the two. Cannot be effectively absorbed by the brazing material. As a result, cracks and cracks are generated in the ceramic substrate due to the stress.

【0009】本発明は上記欠点に鑑み案出されたもの
で、その目的はセラミック基板上に金属回路板を、燐接
する金属回路板間に電気的短絡を発生することなく、ま
たセラミック基板に割れ等を発生することなく強固に接
着させることができるセラミック回路基板を提供するこ
とにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to form a metal circuit board on a ceramic substrate without causing an electrical short circuit between the metal circuit boards which are in contact with each other, and to break the metal circuit board. It is an object of the present invention to provide a ceramic circuit board that can be firmly bonded without generating any problem.

【0010】[0010]

【課題を解決するための手段】本発明のセラミック回路
基板は、セラミック基板の上面に活性金属ロウ材層を介
して金属回路板を取着して成るセラミック回路基板であ
って、前記活性金属ロウ材層は銀粉末と銅粉末および/
または銀−銅合金粉末から成るロウ材粉末と、チタン、
ジルコニウム、ハフニウムおよびこれらの水素化物の少
なくとも1種から成る活性金属粉末とより成り、かつ内
部に融点が1200℃以上、平均粒径が1〜10μmの
金属粉末を5〜20重量%含有していることを特徴とす
るものである。
A ceramic circuit board according to the present invention is a ceramic circuit board having a metal circuit board attached to an upper surface of a ceramic substrate via an active metal brazing material layer. The material layers are silver powder and copper powder and / or
Or a brazing filler metal powder comprising a silver-copper alloy powder, and titanium,
Active metal powder composed of at least one of zirconium, hafnium and hydrides thereof and containing therein 5 to 20% by weight of a metal powder having a melting point of 1200 ° C. or more and an average particle diameter of 1 to 10 μm. It is characterized by the following.

【0011】本発明のセラミック回路基板によれば、セ
ラミック基板上に金属回路板を接合する金属活性ロウ材
層が、銀粉末と銅粉末および/または銀−銅合金粉末か
ら成るロウ材粉末と、チタン、ジルコニウム、ハフニウ
ムおよびこれらの水素化物の少なくとも1種から成る活
性金属粉末とより成り、かつ内部に融点が1200℃以
上、平均粒径が1〜10μmの金属粉末を5〜20重量
%含有していることからセラミック基板上に前記活性金
属ロウ材層を介して金属回路板を接合させる際、ロウ材
が液相線温度以上の温度に加熱されて溶融したとしても
該溶融したロウ材はその内部に含有されている金属粉末
との接触による抵抗によって粘度が高くなり、その結
果、ロウ材が隣接する金属回路板間に大きく熔け広がる
ことはなく、隣接する金属回路板間の電気的な独立が維
持されて製品としてのセラミック回路基板を常に正常に
機能させることができる。
According to the ceramic circuit board of the present invention, the metal active brazing material layer for joining the metal circuit board to the ceramic substrate includes a brazing material powder composed of silver powder and copper powder and / or silver-copper alloy powder; An active metal powder comprising at least one of titanium, zirconium, hafnium and a hydride thereof, and containing therein 5 to 20% by weight of a metal powder having a melting point of 1200 ° C. or more and an average particle diameter of 1 to 10 μm. Therefore, when joining the metal circuit board via the active metal brazing material layer on the ceramic substrate, even if the brazing material is heated to a temperature equal to or higher than the liquidus temperature and melted, the molten brazing material is Viscosity increases due to resistance due to contact with the metal powder contained therein, and as a result, the brazing material does not significantly melt and spread between adjacent metal circuit boards. Electrical independence of the metal circuit plates is maintained can always function properly ceramic circuit board as a product.

【0012】また同時に、前記ロウ材は金属粉末によっ
て熔け広がりが有効に抑制されるためセラミック基板と
金属回路板との間には所定量のロウ材が介在することと
なり、その結果、セラミック基板と金属回路板との接合
が強固となるとともにセラミック基板と金属回路板との
熱膨張係数の相違に起因して応力が発生したとしてもそ
の応力は前記ロウ材で吸収され、セラミック基板にクラ
ックや割れ等が発生するのを有効に防止することもでき
る。
At the same time, since the melting and spreading of the brazing material is effectively suppressed by the metal powder, a predetermined amount of the brazing material is interposed between the ceramic substrate and the metal circuit board. Even if the joint with the metal circuit board becomes strong and stress is generated due to the difference in the coefficient of thermal expansion between the ceramic substrate and the metal circuit board, the stress is absorbed by the brazing material, and the ceramic substrate is cracked or broken. And the like can be effectively prevented.

【0013】[0013]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1及び図2は、本発明のセラミック
回路基板の一実施例を示し、1はセラミック基板、2は
活性金属ロウ材層、3は金属回路板である。
Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a ceramic circuit board according to the present invention, wherein 1 is a ceramic substrate, 2 is an active metal brazing material layer, and 3 is a metal circuit board.

【0014】前記セラミック基板1は四角形状をなし、
その上面に金属回路板3が活性金属ロウ材層2を介して
ロウ付けされている。
The ceramic substrate 1 has a square shape,
On its upper surface, a metal circuit board 3 is brazed via an active metal brazing material layer 2.

【0015】前記セラミック基板1はその上面に接合さ
れる金属回路板3を支持する支持部材として作用し、酸
化アルミニウム質焼結体、ムライト質焼結体、炭化珪素
質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結
体等の電気絶縁材料で形成されている。
The ceramic substrate 1 functions as a support member for supporting the metal circuit board 3 joined to the upper surface thereof, and is made of aluminum oxide sintered body, mullite sintered body, silicon carbide sintered body, aluminum nitride It is formed of an electrically insulating material such as a sintered body and a silicon nitride sintered body.

【0016】前記セラミック基板1は、例えば、酸化ア
ルミニウム質焼結体から成る場合、酸化アルミニウム、
酸化珪素、酸化マグネシウム、酸化カルシウム等の原料
粉末に適当な有機バインダー、可塑剤、溶剤を添加混合
して泥漿状となすとともに該泥漿物を従来周知のドクタ
ーブレード法やカレンダーロール法を採用することによ
ってセラミックグリーンシート(セラミック生シート)
を形成し、しかる後、前記セラミックグリーンシートに
適当な打ち抜き加工を施すとともにこれを複数枚積層
し、約1600℃の高温で焼成することによって製作さ
れる。
When the ceramic substrate 1 is made of, for example, an aluminum oxide sintered body, aluminum oxide,
An appropriate organic binder, a plasticizer, and a solvent are added to and mixed with raw material powders such as silicon oxide, magnesium oxide, and calcium oxide to form a slurry, and the slurry is subjected to a conventionally known doctor blade method or calendar roll method. By ceramic green sheet (ceramic raw sheet)
Then, the ceramic green sheet is manufactured by subjecting the ceramic green sheet to an appropriate punching process, laminating a plurality of the sheets, and firing at a high temperature of about 1600 ° C.

【0017】また前記セラミック基板1はその上面に金
属回路板3が活性金属ロウ材層2を介して接合されてお
り、該金属回路板3には半導体素子等の電子部品が接続
され、半導体素子等の電子部品に電気信号や電力を供給
する作用をなす。
The ceramic substrate 1 has a metal circuit board 3 joined to the upper surface thereof via an active metal brazing material layer 2. Electronic components such as semiconductor elements are connected to the metal circuit board 3. And the like to supply electric signals and electric power to electronic components such as the electronic parts.

【0018】前記金属回路板3は銅等の金属材料から成
り、銅等のインゴット(塊)に圧延加工法や打ち抜き加
工法等、従来周知の金属加工法を施すことによって、例
えば、厚さが500μmで所定パターン形状に製作され
る。
The metal circuit board 3 is made of a metal material such as copper. The ingot (lumps) made of copper or the like is subjected to a conventionally known metal processing method such as a rolling method or a punching method so that the thickness is reduced, for example. It is manufactured in a predetermined pattern shape at 500 μm.

【0019】なお、前記金属回路板3はこれを無酸素銅
で形成しておくと、該無酸素銅はセラミック基板1上に
活性金属ロウ材層2を介して接合する際、銅の表面が銅
中に存在する酸素により酸化されることなく活性金属ロ
ウ材2との濡れ性が良好となり、その結果、セラミック
基板1への活性金属ロウ材層2を介しての接合が強固と
なる。従って、前記金属回路板3はこれを無酸素銅で形
成しておくことが好ましい。
When the metal circuit board 3 is formed of oxygen-free copper, the oxygen-free copper is bonded to the ceramic substrate 1 via the active metal brazing material layer 2 when the surface of the copper is removed. The wettability with the active metal brazing material 2 is improved without being oxidized by oxygen present in the copper, and as a result, the bonding to the ceramic substrate 1 via the active metal brazing material layer 2 becomes strong. Therefore, it is preferable that the metal circuit board 3 is formed of oxygen-free copper.

【0020】また前記金属回路板3はその表面にニッケ
ルから成る、良導電性で、かつ耐蝕性及びロウ材との濡
れ性が良好な金属をメッキ法により被着させておくと、
金属回路板3と外部電気回路との電気的接続を良好と成
すとともに金属回路板3に半導体素子等の電子部品を強
固に接着させることができる。従って、前記金属回路板
3はその表面にニッケルから成る、良導電性で、かつ耐
蝕性及びロウ材との濡れ性が良好な金属をメッキ法によ
り被着させておくことが好ましい。
If the metal circuit board 3 is coated with a metal made of nickel and having good conductivity, good corrosion resistance and good wettability with a brazing material by plating,
A good electrical connection between the metal circuit board 3 and the external electric circuit can be achieved, and an electronic component such as a semiconductor element can be firmly adhered to the metal circuit board 3. Therefore, it is preferable that the metal circuit board 3 is coated with a metal made of nickel and having good conductivity, good corrosion resistance and good wettability with the brazing material by plating.

【0021】更に前記金属回路板3の表面にニッケルか
ら成るメッキ層を被着させる場合、燐を8〜15重量%
含有させたニッケル−燐のアモルファス合金としておく
とニッケルメッキ層の表面酸化を良好に防止して金属回
路板3に半導体素子等の電子部品を半田等の接着材を介
して確実、強固に電気的接続することができる。従っ
て、前記金属回路板3の表面にニッケルから成るメッキ
層を被着させる場合、内部に燐を8〜15重量%の範囲
に、好適には10〜15重量%の範囲に含有させてニッ
ケル−燐のアモルファス合金としておくことが好まし
い。
Further, when a plating layer made of nickel is applied on the surface of the metal circuit board 3, the phosphorous content is 8 to 15% by weight.
If the contained nickel-phosphorus amorphous alloy is used, the surface oxidation of the nickel plating layer is prevented well, and electronic components such as semiconductor elements are securely and firmly electrically connected to the metal circuit board 3 via an adhesive such as solder. Can be connected. Therefore, when a plating layer made of nickel is applied to the surface of the metal circuit board 3, the content of phosphorus is preferably in the range of 8 to 15% by weight, preferably in the range of 10 to 15% by weight. It is preferable to use an amorphous alloy of phosphorus.

【0022】また更に、前記金属回路板3の表面にニッ
ケルから成るメッキ層を被着させる場合、ニッケルメッ
キ層の厚みが1.5μm未満となると金属回路板3の表
面をニッケルメッキ層で完全に被覆することができなく
なって金属回路板3の酸化腐蝕を有効に防止することが
困難となってしまい、また3μmを超えるとニッケルメ
ッキ層の内部に内在する内在応力が大きくなってセラミ
ック基板1に反りや割れ等が発生してしまう危険性があ
る。特にセラミック基板1の厚さが700μm以下の薄
いものになった場合には、このセラミック基板1の反り
や割れ等が顕著となってしまう。従って、前記金属回路
板3の表面にニッケルから成るメッキ層を被着させる場
合、ニッケルメッキ層の厚みは1.5μm〜3μmの範
囲としておくことが好ましい。
Further, when a plating layer made of nickel is applied to the surface of the metal circuit board 3, when the thickness of the nickel plating layer is less than 1.5 μm, the surface of the metal circuit board 3 is completely covered with the nickel plating layer. It becomes difficult to effectively prevent the metal circuit board 3 from being oxidized and corroded, and if it exceeds 3 μm, the internal stress inside the nickel plating layer becomes large and the ceramic substrate 1 There is a risk that warpage or cracks may occur. In particular, when the thickness of the ceramic substrate 1 is as thin as 700 μm or less, warpage or cracking of the ceramic substrate 1 becomes remarkable. Therefore, when a plating layer made of nickel is applied to the surface of the metal circuit board 3, it is preferable that the thickness of the nickel plating layer be in the range of 1.5 μm to 3 μm.

【0023】前記金属回路板3はセラミック基板1上に
活性金属ロウ材層2を介して接合されており、該活性金
属ロウ材層2は金属回路板3をセラミック基板1上に直
接接合させる作用をなす。
The metal circuit board 3 is joined to the ceramic substrate 1 via an active metal brazing material layer 2, and the active metal brazing material layer 2 acts to directly join the metal circuit board 3 on the ceramic substrate 1. Make

【0024】前記活性金属ロウ材層2は、銀粉末と銅粉
末および/または銀−銅合金粉末から成るロウ材粉末
と、チタン、ジルコニウム、ハフニウムおよびこれらの
水素化物の少なくとも1種から成る活性金属粉末とより
成り、かつ内部に融点が1200℃以上、平均粒径が1
〜10μmの金属粉末2aを5〜20重量%含有してい
る。
The active metal brazing material layer 2 comprises a brazing material powder composed of silver powder, copper powder and / or silver-copper alloy powder, and an active metal composed of at least one of titanium, zirconium, hafnium and hydrides thereof. Powder, and having a melting point of 1200 ° C. or more and an average particle size of 1
It contains 5 to 20% by weight of a metal powder 2a of 10 to 10 μm.

【0025】前記活性金属ロウ材層2によるセラミック
基板1への金属回路板3の接合は、まず銀粉末と銅粉末
および/または銀−銅合金粉末等から成るロウ材粉末
と、チタン、ジルコニウム、ハフニウムおよびこれらの
水素化物の少なくとも1種から成る活性金属粉末と、融
点が1200℃以上、平均粒径が1〜10μmの金属粉
末2aと、有機溶剤、溶媒とを混合して活性金属ロウ材
ペーストを作製し、次にこの活性金属ロウ材ペーストを
セラミック基板1上に従来周知のスクリーン印刷技術を
用いて所定パターンに印刷し、次に印刷された活性金属
ロウ材ペースト上に金属回路板3を載置させ、しかる
後、これを真空中もしくは中性、還元雰囲気中、約90
0℃の温度で加熱処理し、セラミック基板1に活性金属
粉末を介して銀−銅合金からなるロウ材を接合させると
ともに該ロウ材を金属回路板3に接合させることによっ
て行なわれる。この場合、加熱によって溶融したロウ材
はその内部に含有されている金属粉末との接触による抵
抗によって粘度が高くなり、その結果、ロウ材が隣接す
る金属回路板間3に大きく熔け広がることはなく、隣接
する金属回路板3間の電気的な独立が維持されて製品と
してのセラミック回路基板を常に正常に機能させること
ができる。また同時に、前記ロウ材は金属粉末2aによ
って熔け広がりが有効に抑制されるためセラミック基板
1と金属回路板3との間には所定量のロウ材が介在する
こととなり、その結果、セラミック基板1と金属回路板
3との接合が強固となるとともにセラミック基板1と金
属回路板3との熱膨張係数の相違に起因して応力が発生
したとしてもその応力は前記ロウ材で吸収され、セラミ
ック基板1にクラックや割れ等が発生するのを有効に防
止することもできる。
The joining of the metal circuit board 3 to the ceramic substrate 1 by the active metal brazing material layer 2 is performed by first using a brazing material powder composed of silver powder, copper powder and / or silver-copper alloy powder, titanium, zirconium, An active metal brazing material paste obtained by mixing active metal powder comprising at least one of hafnium and their hydrides, metal powder 2a having a melting point of 1200 ° C. or more and an average particle size of 1 to 10 μm, an organic solvent and a solvent. Then, the active metal brazing paste is printed in a predetermined pattern on the ceramic substrate 1 using a conventionally known screen printing technique, and then the metal circuit board 3 is placed on the printed active metal brazing paste. And then put it in a vacuum or neutral, reducing atmosphere for about 90
Heating is performed at a temperature of 0 ° C. to join a brazing material made of a silver-copper alloy to the ceramic substrate 1 via an active metal powder and to join the brazing material to the metal circuit board 3. In this case, the brazing material melted by heating has an increased viscosity due to resistance due to contact with the metal powder contained therein, and as a result, the brazing material does not melt and spread widely between the adjacent metal circuit boards 3. In addition, the electrical independence between the adjacent metal circuit boards 3 is maintained, and the ceramic circuit board as a product can always function normally. At the same time, the melting and spreading of the brazing material is effectively suppressed by the metal powder 2a, so that a predetermined amount of the brazing material is interposed between the ceramic substrate 1 and the metal circuit board 3, and as a result, the ceramic substrate 1 When the ceramic substrate 1 and the metal circuit board 3 are firmly bonded to each other and a stress is generated due to a difference in thermal expansion coefficient between the ceramic substrate 1 and the metal circuit board 3, the stress is absorbed by the brazing material, and 1 can also effectively prevent the occurrence of cracks and cracks.

【0026】前記活性金属ロウ材層2の銀粉末と銅粉末
および/または銀−銅合金粉末等から成るロウ材粉末は
金属回路板3に強固に接合し、またチタン、ジルコニウ
ム、ハフニウムおよびこれらの水素化物の少なくとも1
種から成る活性金属粉末は銀−銅合金からなるロウ材及
びセラミック基板1に強固し、これによって金属回路板
3をセラミック基板1に接合させる。
The brazing powder composed of silver powder, copper powder and / or silver-copper alloy powder of the active metal brazing material layer 2 is firmly bonded to the metal circuit board 3 and is made of titanium, zirconium, hafnium and the like. At least one of the hydrides
The active metal powder consisting of the seed is solidified on the brazing material made of a silver-copper alloy and on the ceramic substrate 1, thereby joining the metal circuit board 3 to the ceramic substrate 1.

【0027】なお、前記活性金属ロウ材層2を構成する
チタン、ジルコニウム、ハフニウムおよびこれらの水素
化物の少なくとも1種から成る活性金属粉末はその量が
2重量%未満となると活性金属の絶対量が不足して活性
金属ロウ材層2をセラミック基板1に強固に接合させる
ことが困難となる危険性があり、また5重量%を超える
と活性金属ロウ材層2とセラミック基板1との間に脆弱
な反応層が厚く形成され、結果的に活性金属ロウ材層2
とセラミック基板1との接合強度が低下してしまう危険
性がある。従って、前記活性金属ロウ材層2を構成する
チタン、ジルコニウム、ハフニウムおよびこれらの水素
化物の少なくとも1種から成る活性金属粉末はその量を
2〜5重量%の範囲にしておくことが好ましい。
The active metal powder comprising at least one of titanium, zirconium, hafnium and their hydrides constituting the active metal brazing material layer 2 has an absolute amount of active metal of less than 2% by weight. There is a danger that it will be difficult to firmly join the active metal brazing material layer 2 to the ceramic substrate 1, and if it exceeds 5% by weight, the active metal brazing material layer 2 and the ceramic substrate 1 are fragile. The active metal brazing material layer 2 is formed thickly as a result.
There is a risk that the bonding strength between the ceramic substrate 1 and the ceramic substrate 1 may be reduced. Accordingly, it is preferable that the amount of the active metal powder comprising at least one of titanium, zirconium, hafnium and hydrides thereof constituting the active metal brazing material layer 2 be in the range of 2 to 5% by weight.

【0028】また前記活性金属ロウ材層2はその内部に
融点が1200℃以上、平均粒径が1〜10μmの金属
粉末2aが5〜20重量%含有されている。
The active metal brazing material layer 2 contains 5 to 20% by weight of a metal powder 2a having a melting point of 1200 ° C. or more and an average particle diameter of 1 to 10 μm.

【0029】前記金属粉末2aは溶融したロウ材の熔け
広がりを抑制する作用をなし、該金属粉末2aの含有に
よって活性金属ロウ材層2は大きく熔け広がることはな
く、これによって隣接する金属回路板3間の電気的な独
立が維持され、製品としてのセラミック回路基板を常に
正常に機能させることができるとともにセラミック基板
1と金属回路板3との間に介在する活性金属ロウ材層2
の量を所定量としてセラミック基板1と金属回路板3と
の接合を強固とし、かつセラミック基板1と金属回路板
3との熱膨張係数の相違に起因して発生する応力を有効
に吸収し、セラミック基板1にクラックや割れ等が発生
するのを防止することができる。
The metal powder 2a acts to suppress the melting and spreading of the molten brazing material. The active metal brazing material layer 2 does not melt and spread greatly due to the inclusion of the metal powder 2a. 3 maintain the electrical independence between the ceramic substrate 1 and the metal circuit board 3. The active metal brazing material layer 2 interposed between the ceramic substrate 1 and the metal circuit board 3 can always function normally.
The strength of the ceramic substrate 1 and the metal circuit board 3 is strengthened by setting the amount of the ceramic substrate 1 and the metal circuit board 3 to a predetermined value, and the stress generated due to the difference in thermal expansion coefficient between the ceramic substrate 1 and the metal circuit board 3 is effectively absorbed, Cracks and cracks can be prevented from being generated in the ceramic substrate 1.

【0030】前記金属粉末2aはその融点が1200℃
以上の金属材料、具体的にはタングステン、モリブデ
ン、マンガン等からなり、融点が1200℃以上と高い
ことからセラミック基板1に活性金属ロウ材層2を介し
て金属回路板3を接合させる際、金属粉末2aに熱に印
加されても金属粉末2aが溶融することはなく、その結
果、金属粉末2aによってロウ材の熔け広がりを有効に
抑制することができる。
The melting point of the metal powder 2a is 1200 ° C.
Since the above metal materials, specifically, tungsten, molybdenum, manganese, etc., have a high melting point of 1200 ° C. or more, when the metal circuit board 3 is bonded to the ceramic substrate 1 via the active metal brazing material layer 2, Even if heat is applied to the powder 2a, the metal powder 2a does not melt, and as a result, the melting and spreading of the brazing material can be effectively suppressed by the metal powder 2a.

【0031】なお、前記金属粉末2aはその平均粒径が
1μm未満となると金属粉末2aの比表面積が大きくな
って金属粉末2a表面に形成される酸化皮膜中に多くの
酸素が存在し、該酸素によって活性金属ロウ材層2のセ
ラミック基板1や金属回路板3に対する濡れ性が低下し
て、前記セラミック基板1に活性金属ロウ材層2を介し
て金属回路板3を強固に接合させることができず、また
10μmを超えると金属粉末2aの比表面積が小さくな
り、溶融したロウ材の金属粉末2aとの接触による抵抗
が小さくなってロウ材の熔け広がりを有効に抑制するこ
とができない。従って、前記金属粉末2aの平均粒径は
1〜10μmの範囲に特定される。
When the average particle size of the metal powder 2a is less than 1 μm, the specific surface area of the metal powder 2a increases, and a large amount of oxygen is present in an oxide film formed on the surface of the metal powder 2a. Thereby, the wettability of the active metal brazing material layer 2 to the ceramic substrate 1 and the metal circuit board 3 is reduced, and the metal circuit board 3 can be firmly joined to the ceramic substrate 1 via the active metal brazing material layer 2. On the other hand, if the thickness exceeds 10 μm, the specific surface area of the metal powder 2a decreases, and the resistance of the molten brazing material due to contact with the metal powder 2a decreases, so that the melting and spreading of the brazing material cannot be effectively suppressed. Therefore, the average particle size of the metal powder 2a is specified in the range of 1 to 10 μm.

【0032】また前記金属粉末2aはその添加量が5重
量%未満となると溶融したロウ材の金属粉末2aとの接
触による抵抗が小さくなってロウ材の熔け広がりを有効
に抑制することができず、また20重量%を超えるとセ
ラミック基板1および金属回路板3に対するロウ材の接
合面積が狭くなってセラミック基板1への金属回路板3
の接合強度が低下してしまう。従って、前記金属粉末2
aの添加量は5〜20重量%の範囲に特定される。
When the amount of the metal powder 2a is less than 5% by weight, the resistance of the molten brazing material due to contact with the metal powder 2a becomes small, and the melting and spreading of the brazing material cannot be suppressed effectively. If the content exceeds 20% by weight, the bonding area of the brazing material to the ceramic substrate 1 and the metal circuit board 3 becomes narrow, and the metal circuit board 3
The bonding strength is reduced. Therefore, the metal powder 2
The addition amount of a is specified in the range of 5 to 20% by weight.

【0033】かくして、上述のセラミック回路基板によ
れば、セラミック基板1の上面に活性金属ロウ材層2を
介して接合された金属回路板3に半導体素子等の電子部
品を接続させるとともに金属回路板3を外部電気回路に
接続させれば半導体素子等の電子部品に金属回路板3を
介して外部電気回路より電気信号や電力が供給される。
Thus, according to the above-mentioned ceramic circuit board, electronic components such as semiconductor elements are connected to the metal circuit board 3 joined to the upper surface of the ceramic substrate 1 via the active metal brazing material layer 2, and the metal circuit board is connected. When the external circuit 3 is connected to an external electric circuit, electric signals and electric power are supplied from the external electric circuit to the electronic components such as semiconductor elements via the metal circuit board 3.

【0034】なお、本発明は上述の実施例に限定される
ものではなく、本発明の要旨を逸脱しない範囲であれば
種々の変更は可能であり、例えば、上述の実施例ではセ
ラミック基板1がアルミニウム質焼結体で形成された例
を示したが、電子部品が多量の熱を発し、この熱を効率
良く除去したい場合にはセラミック基板1を熱伝導率の
高い窒化アルミニウム質焼結体や窒化珪素質焼結体で形
成すれば良く、金属回路板3に高速で電気信号を伝播さ
せたい場合にはセラミック基板1を誘電率の低いムライ
ト質焼結体で形成すれば良い。
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. Although an example in which the electronic component generates a large amount of heat and an efficient removal of this heat is described, the ceramic substrate 1 may be formed of an aluminum nitride sintered body having a high thermal conductivity or an aluminum nitride sintered body. The ceramic substrate 1 may be formed of a mullite sintered body having a low dielectric constant when an electric signal is to be propagated to the metal circuit board 3 at high speed.

【0035】[0035]

【発明の効果】本発明のセラミック回路基板によれば、
セラミック基板上に金属回路板を接合する金属活性ロウ
材が、銀粉末と銅粉末および/または銀−銅合金粉末か
ら成るロウ材粉末と、チタン、ジルコニウム、ハフニウ
ムおよびこれらの水素化物の少なくとも1種から成る活
性金属粉末とより成り、かつ内部に融点が1200℃以
上、平均粒径が1〜10μmの金属粉末を5〜20重量
%含有していることからセラミック基板上に前記活性金
属ロウ材を介して金属回路板を接合させる際、ロウ材が
液相線温度以上の温度に加熱されて溶融したとしても該
溶融したロウ材はその内部に含有されている金属粉末と
の接触による抵抗によって粘度が高くなり、その結果、
ロウ材が隣接する金属回路板間に大きく熔け広がること
はなく、隣接する金属回路板間の電気的な独立が維持さ
れて製品としてのセラミック回路基板を常に正常に機能
させることができる。
According to the ceramic circuit board of the present invention,
The metal active brazing material for joining the metal circuit board on the ceramic substrate is a brazing material powder composed of silver powder and copper powder and / or silver-copper alloy powder, and at least one of titanium, zirconium, hafnium and hydrides thereof. And containing 5 to 20% by weight of a metal powder having a melting point of 1200 ° C. or more and an average particle diameter of 1 to 10 μm inside the active metal brazing material on a ceramic substrate. When joining a metal circuit board via the same, even if the brazing material is heated to a temperature equal to or higher than the liquidus temperature and melts, the molten brazing material has a viscosity due to resistance due to contact with the metal powder contained therein. Is higher, so that
The brazing material does not significantly melt and spread between the adjacent metal circuit boards, and the electrical independence between the adjacent metal circuit boards is maintained, so that the ceramic circuit board as a product can always function normally.

【0036】また同時に、前記ロウ材は金属粉末によっ
て熔け広がりが有効に抑制されるためセラミック基板と
金属回路板との間には所定量のロウ材が介在することと
なり、その結果、セラミック基板と金属回路板との接合
が強固となるとともにセラミック基板と金属回路板との
熱膨張係数の相違に起因して応力が発生したとしてもそ
の応力は前記ロウ材で吸収され、セラミック基板にクラ
ックや割れ等が発生するのを有効に防止することもでき
る。
At the same time, since the melting and spreading of the brazing material is effectively suppressed by the metal powder, a predetermined amount of the brazing material is interposed between the ceramic substrate and the metal circuit board. Even if the joint with the metal circuit board becomes strong and stress is generated due to the difference in the coefficient of thermal expansion between the ceramic substrate and the metal circuit board, the stress is absorbed by the brazing material, and the ceramic substrate is cracked or broken. And the like can be effectively prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のセラミック回路基板の一実施例を示す
断面図である。
FIG. 1 is a sectional view showing one embodiment of a ceramic circuit board of the present invention.

【図2】図1に示すセラミック回路基板の要部拡大図で
ある。
FIG. 2 is an enlarged view of a main part of the ceramic circuit board shown in FIG.

【符号の説明】[Explanation of symbols]

1・・・・セラミック基板 2・・・・活性金属ロウ材層 2a・・・金属粉末 3・・・・金属回路板 DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Active metal brazing material layer 2a ... Metal powder 3 ... Metal circuit board

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】セラミック基板の上面に活性金属ロウ材層
を介して金属回路板を取着して成るセラミック回路基板
であって、前記活性金属ロウ材層は銀粉末と銅粉末およ
び/または銀−銅合金粉末から成るロウ材粉末と、チタ
ン、ジルコニウム、ハフニウムおよびこれらの水素化物
の少なくとも1種から成る活性金属粉末とより成り、か
つ内部に融点が1200℃以上、平均粒径が1〜10μ
mの金属粉末を5〜20重量%含有していることを特徴
とするセラミック回路基板。
1. A ceramic circuit board having a metal circuit board attached to an upper surface of a ceramic substrate via an active metal brazing material layer, wherein the active metal brazing material layer comprises silver powder, copper powder and / or silver. A brazing filler metal powder composed of a copper alloy powder and an active metal powder composed of at least one of titanium, zirconium, hafnium and hydrides thereof, and having a melting point of 1200 ° C. or more and an average particle diameter of 1 to 10 μm inside
A ceramic circuit board, comprising 5 to 20% by weight of a metal powder of the formula (1).
JP2000158696A 2000-05-29 2000-05-29 Ceramic circuit board Expired - Fee Related JP4493158B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000158696A JP4493158B2 (en) 2000-05-29 2000-05-29 Ceramic circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000158696A JP4493158B2 (en) 2000-05-29 2000-05-29 Ceramic circuit board

Publications (2)

Publication Number Publication Date
JP2001339155A true JP2001339155A (en) 2001-12-07
JP4493158B2 JP4493158B2 (en) 2010-06-30

Family

ID=18663127

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP4493158B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140126155A1 (en) * 2011-06-30 2014-05-08 Hitachi Metals, Ltd. Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module
WO2020184510A1 (en) * 2019-03-14 2020-09-17 日本碍子株式会社 Joined substrate and production method for joined substrate
WO2020209121A1 (en) * 2019-04-09 2020-10-15 日本碍子株式会社 Bonded substrate and method for producing bonded substrate

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140126155A1 (en) * 2011-06-30 2014-05-08 Hitachi Metals, Ltd. Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module
US9780011B2 (en) * 2011-06-30 2017-10-03 Hitachi Metals, Ltd. Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module
WO2020184510A1 (en) * 2019-03-14 2020-09-17 日本碍子株式会社 Joined substrate and production method for joined substrate
JPWO2020184510A1 (en) * 2019-03-14 2021-12-09 日本碍子株式会社 Bonded substrate and manufacturing method of bonded substrate
JP7289910B2 (en) 2019-03-14 2023-06-12 日本碍子株式会社 BONDED SUBSTRATE AND BONDED SUBSTRATE MANUFACTURING METHOD
WO2020209121A1 (en) * 2019-04-09 2020-10-15 日本碍子株式会社 Bonded substrate and method for producing bonded substrate
JPWO2020209121A1 (en) * 2019-04-09 2020-10-15
JP7289911B2 (en) 2019-04-09 2023-06-12 日本碍子株式会社 BONDED SUBSTRATE AND BONDED SUBSTRATE MANUFACTURING METHOD
EP3955284A4 (en) * 2019-04-09 2023-09-20 NGK Insulators, Ltd. Bonded substrate and method for producing bonded substrate
JP7373038B2 (en) 2019-04-09 2023-11-01 日本碍子株式会社 bonded substrate
US11917752B2 (en) 2019-04-09 2024-02-27 Ngk Insulators, Ltd. Bonded substrate and manufacturing method of bonded substrate

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