JPH02254164A - Divided sputtering target - Google Patents
Divided sputtering targetInfo
- Publication number
- JPH02254164A JPH02254164A JP7596389A JP7596389A JPH02254164A JP H02254164 A JPH02254164 A JP H02254164A JP 7596389 A JP7596389 A JP 7596389A JP 7596389 A JP7596389 A JP 7596389A JP H02254164 A JPH02254164 A JP H02254164A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering target
- targets
- divided
- bonding material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〉
本発明は、薄膜形成に用いるスパッタリングターゲット
に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a sputtering target used for forming a thin film.
（従来の技術）
スパッタリング法は、真空中にＡｒガスを導入し、陰極
に負電位を与えてグロー放電を発生させる。ここで生成
したＡｒイオンはターゲット（陰極）に衝突し、ターゲ
ットをスパッタし、被スパツタ粒子は対向した陽極上の
基板上に堆積し薄膜を形成する。(Prior Art) In the sputtering method, Ar gas is introduced into a vacuum, and a negative potential is applied to a cathode to generate glow discharge. The Ar ions generated here collide with the target (cathode) and sputter the target, and the sputtered particles are deposited on the substrate on the opposing anode to form a thin film.
このスパッタリング法で用いられるターゲットはボンデ
ィング材でバッキングプレートと接合して使用される。The target used in this sputtering method is bonded to a backing plate using a bonding material.
一般にバッキングプレートは純銅あるいは銅系合金が使
用され、ボンディング材はインジウムのような低融点金
属、半田のような合金、ロウ材、樹脂等が使用される。Generally, the backing plate is made of pure copper or a copper-based alloy, and the bonding material is a low melting point metal such as indium, an alloy such as solder, a brazing material, a resin, or the like.
近年、スパッタリング法に用いるスパッタリング装置が
益々大型化しているが、これにともなってスパッタリン
グターゲットも大型化している。In recent years, sputtering apparatuses used in sputtering methods have become increasingly larger, and along with this, sputtering targets have also become larger.
このため−枚のターゲットでは製作が不可能となり、数
枚のターゲットを製作しこれを継いでバッキングプレー
トに接合する、いわゆる、分割スパッタリングターゲッ
トで大型化に対応している現状である。For this reason, it is impossible to manufacture a sputtering target with only one target, and the current situation is to cope with the increase in size by using a so-called split sputtering target, in which several targets are manufactured and then joined to a backing plate.
また、種類の異なったターグツ１〜を同一・バッキング
プレートに接合し、スパッタリング法により薄膜を形成
する場合がある。この場合も分割スパッタリングターゲ
ットを必要とする。Further, different types of targs 1 to 1 may be bonded to the same backing plate and a thin film may be formed by sputtering. This also requires a split sputtering target.
しかし、分割スパッタリングターゲラ１〜の場合にはタ
ーゲットと他のターグツ１へとの継ぎ目に隙間ができ易
く、ボンディング材はパッキングプレ−１−との接合時
には流動体であるため、その隙間に容易に侵入する欠点
がある。However, in the case of split sputtering target plates 1 to 1, gaps are likely to form at the joints between the target and other targets 1, and since the bonding material is a fluid when bonded to the packing plate 1, it is easy to fill the gaps. It has the disadvantage of penetrating into
このような状態でターゲットをスパッタすると形成され
た膜の中にボンディング材が不純物としで侵入し膜特性
を悪化させる原因となる。If the target is sputtered in such a state, the bonding material will enter the formed film as an impurity, causing deterioration of the film properties.
これを防止するために、従来、ターゲラ１−間の継ぎ目
を第２図に示すように、斜めに加工してターゲラ１〜を
継ぎパツキングア１ノー１へに接合している。In order to prevent this, conventionally, the joints between the target lathes 1 and 1 are processed diagonally to join the target lathes 1 to the joint packing 1 and 1, as shown in FIG.
しかし、このようにターゲットを斜めに加工することは
継ぎ面積が増えるためターゲラ［−間の隙間が大きく間
かないような加工精度が要求され、このため加工コスト
が著しく高くなる欠点がある。However, machining the target obliquely in this way increases the joint area and requires machining accuracy such that the gap between the target blades is large and small, which has the disadvantage of significantly increasing the machining cost.
また、このような斜め加工をすることによってターゲッ
ト間の隙間が完全になくなる訳ではなく隙間の程度が小
さくなるに過ぎない。Furthermore, such oblique machining does not completely eliminate the gap between the targets, but only reduces the degree of the gap.
（解決しようとする問題点）
本発明は、ターゲラ１−の斜め加工をせずに、ターゲッ
トの継ぎ目の隙間にボンディング材が侵入しない分割ス
パッタリングターゲットを提供しようとするものである
。(Problems to be Solved) The present invention aims to provide a split sputtering target in which the bonding material does not enter into the gap between the joints of the target without diagonally processing the target roller 1-.
（問題を解決する手段）
本発明は、ターゲラ１〜の継ぎ目に裏打ち材を貼付して
ターゲット間の隙間にボンディング材が浸入しないよう
にしたものである。(Means for solving the problem) In the present invention, a backing material is attached to the joints of the target plates 1 to 1 to prevent the bonding material from penetrating into the gaps between the targets.
裏打ち材としてはテフロン、ポリイミドのような高分子
耐熱性シートあるいはターゲットが金属の場合は同質の
金属シートが好ましい。The backing material is preferably a heat-resistant polymer sheet such as Teflon or polyimide, or a metal sheet of the same quality if the target is metal.
第１図は本発明になる分割スパッタリングターゲットの
断面図である。FIG. 1 is a sectional view of a divided sputtering target according to the present invention.
本発明を第１図にしたがって説明すると１．ターゲット
１−１と１−２の継ぎ目に裏打ち材４を裏打ちし、ボン
ディング材３でパツキンダブ１ノー１へ２に接ａ−シて
いる。この裏打ち材によってボンディング材がターゲッ
ト間の隙間に侵入することを防止している。The present invention will be explained according to FIG. 1.1. A backing material 4 is lined at the joint between targets 1-1 and 1-2, and bonding material 3 is used to connect the joints of the targets 1-1 and 1-2 to 2. This backing material prevents the bonding material from entering the gaps between the targets.
（実施例）
寸法１２７ｍｍｘ３００ｍｍ厚ざ６ｍｍの五酸化タンタ
ルのターゲットを３枚継ぎ、寸法１５２ｍｍｘ９５０ｍ
ｒｎ厚さ１０ｍｍ（７）無酸素銅ノハツ４゜
キングプレートに接合し、寸法１２７ｍｒｒ＋ｘ９０Ｑ
ｍｍ厚さ６ｍｍの分割スパッタリングターゲットを作成
した。(Example) Three tantalum pentoxide targets with dimensions 127 mm x 300 mm and thickness 6 mm were pieced together, and dimensions 152 mm x 950 m.
rn Thickness 10mm (7) Bonded to oxygen-free copper sawn 4° king plate, dimensions 127mrr + x 90Q
A divided sputtering target with a thickness of 6 mm was created.
裏打ち材は幅１０ｍｍ厚さ０．０５ｍｍのテフロンテー
プを使用し、ターゲット間の継ぎ目は１ｍｍの隙間をあ
けて裏打ち材を貼付した。Teflon tape with a width of 10 mm and a thickness of 0.05 mm was used as the backing material, and the backing material was attached with a gap of 1 mm between the targets.
ボンディング材にはインジュウムを用いた。Indium was used as the bonding material.
この裏打ち材はターゲットとバッキングプレートとの接
合に要する温度に充分堪え得るものであり、この裏打ち
材のためインジュウムが隙間に全く侵入しないことがわ
かった。It was found that this backing material could sufficiently withstand the temperature required for bonding the target and backing plate, and that indium did not enter the gap at all because of this backing material.
（発明の効果）
本発明によれば、分割スパッタリングターゲットにおい
て、ターゲットの継ぎ目に裏打ち材が貼付しであるため
ターグツ１〜間に隙間があってもそこにボンディング材
が侵入しない特徴がある。(Effects of the Invention) According to the present invention, in the split sputtering target, since the backing material is pasted to the joint of the target, even if there is a gap between the targets 1 to 1, the bonding material does not enter there.
また、ターゲットの継ぎ目を斜め加工する必要がないた
め、加工コス［〜が著しく下がる利点がある。Furthermore, since there is no need to diagonally process the joints of the targets, there is an advantage that the processing cost [~] is significantly reduced.
第１図は本発明になる分割スパッタリングターゲットの
断面図である。
図において、ゴー１．１−２はターゲット、２はバッキ
ングプレート、３はボンディング材、４は裏打ち材であ
る。
第２図は従来の分割スパッタリングターゲットの断面図
である。
図において、１−３．１−４は斜め加工したターゲット
である。FIG. 1 is a sectional view of a divided sputtering target according to the present invention. In the figure, 1.1-2 is a target, 2 is a backing plate, 3 is a bonding material, and 4 is a backing material. FIG. 2 is a cross-sectional view of a conventional split sputtering target. In the figure, 1-3.1-4 is a diagonally machined target.
Claims (1)
ット間の継ぎ目に裏打ち材を貼付したことを特徴とする
分割スパッタリングターゲット。A split sputtering target characterized in that a backing material is attached to the joint between the split sputtering targets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1075963A JP2939751B2 (en) | 1989-03-28 | 1989-03-28 | Split sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1075963A JP2939751B2 (en) | 1989-03-28 | 1989-03-28 | Split sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02254164A true JPH02254164A (en) | 1990-10-12 |
| JP2939751B2 JP2939751B2 (en) | 1999-08-25 |
Family
ID=13591383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1075963A Expired - Lifetime JP2939751B2 (en) | 1989-03-28 | 1989-03-28 | Split sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2939751B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012063524A1 (en) * | 2010-11-08 | 2012-05-18 | 三井金属鉱業株式会社 | Divided sputtering target and method for producing same |
| WO2012121028A1 (en) * | 2011-03-04 | 2012-09-13 | シャープ株式会社 | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
| JP2013185160A (en) * | 2012-03-06 | 2013-09-19 | Jx Nippon Mining & Metals Corp | Sputtering target |
| JP2014129559A (en) * | 2012-12-28 | 2014-07-10 | Tosoh Corp | Multi-divided sputtering target and manufacturing method of the same |
| JP2015004116A (en) * | 2013-06-24 | 2015-01-08 | 株式会社アルバック | Target assembly and manufacturing method of the same |
| JP2017014562A (en) * | 2015-06-30 | 2017-01-19 | 株式会社コベルコ科研 | Sputtering target assembly |
| WO2021157112A1 (en) * | 2020-02-06 | 2021-08-12 | 三井金属鉱業株式会社 | Sputtering target |
| KR20220039648A (en) | 2019-08-08 | 2022-03-29 | 미쓰이금속광업주식회사 | split sputtering target |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5920470A (en) * | 1982-07-26 | 1984-02-02 | Murata Mfg Co Ltd | Target for sputtering |
-
1989
- 1989-03-28 JP JP1075963A patent/JP2939751B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5920470A (en) * | 1982-07-26 | 1984-02-02 | Murata Mfg Co Ltd | Target for sputtering |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012063524A1 (en) * | 2010-11-08 | 2012-05-18 | 三井金属鉱業株式会社 | Divided sputtering target and method for producing same |
| JP4961514B1 (en) * | 2010-11-08 | 2012-06-27 | 三井金属鉱業株式会社 | Split sputtering target and manufacturing method thereof |
| JP2012127005A (en) * | 2010-11-08 | 2012-07-05 | Mitsui Mining & Smelting Co Ltd | Split sputtering target and method for producing the same |
| WO2012121028A1 (en) * | 2011-03-04 | 2012-09-13 | シャープ株式会社 | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
| JP2013185160A (en) * | 2012-03-06 | 2013-09-19 | Jx Nippon Mining & Metals Corp | Sputtering target |
| JP2014129559A (en) * | 2012-12-28 | 2014-07-10 | Tosoh Corp | Multi-divided sputtering target and manufacturing method of the same |
| JP2015004116A (en) * | 2013-06-24 | 2015-01-08 | 株式会社アルバック | Target assembly and manufacturing method of the same |
| JP2017014562A (en) * | 2015-06-30 | 2017-01-19 | 株式会社コベルコ科研 | Sputtering target assembly |
| KR20220039648A (en) | 2019-08-08 | 2022-03-29 | 미쓰이금속광업주식회사 | split sputtering target |
| WO2021157112A1 (en) * | 2020-02-06 | 2021-08-12 | 三井金属鉱業株式会社 | Sputtering target |
| JPWO2021157112A1 (en) * | 2020-02-06 | 2021-08-12 | ||
| CN114901857A (en) * | 2020-02-06 | 2022-08-12 | 三井金属矿业株式会社 | Sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2939751B2 (en) | 1999-08-25 |
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