JP2000144400A - Sputtering target and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of abnormal electric discharge due to the division sections of a target having the division sections and to prevent the adhesion of particles due to the abnormal electric discharge. SOLUTION: In a multidivision-type sputtering target constituted by joining plural target members onto a backing plate by the use of a bounding agent, clearances between respective target members are filled. with an alloy having a melting point higher than that of the bonding agent or an alloy capable of filling the clearances between respective target members at a temperature below the melting point of the bonding agent and having a melting point higher than that of the bonding agent after the completion of filling.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target used for producing a thin film by a sputtering method, and more particularly to a sputtering target having a divided portion in which a plurality of target materials are arranged on a single backing plate. It is.

[0002]

2. Description of the Related Art A variety of thin films are used in devices such as semiconductor elements, recording media, flat panel displays, etc., which support the information society and multimedia in recent years. Means for forming a thin film include a sputtering method,
A vacuum deposition method, a CVD method, and the like can be given. Above all, the sputtering method is advantageous in forming a uniform film over a large area, and is therefore often used in the field of flat panel displays (particularly liquid crystal displays).

[0003] With the recent increase in size of flat panel displays, the size of glass substrates used for panel manufacturing has also increased. Therefore, the size of a target used in the production of a thin film is also increasing in accordance with the substrate size. In particular, in recent years, in a target for a stationary facing type sputtering apparatus, which has been spotlighted due to less generation of foreign matter (particles), the target size needs to be slightly larger than the substrate size.
The demand for larger targets is becoming stronger.

[0004] As a target used for the above-mentioned applications, for example, an ITO target can be mentioned. The ITO target is generally formed by pressing or slip casting a mixed powder of indium oxide powder and tin oxide powder, or an ITO powder in which tin oxide is dissolved in indium oxide by a predetermined amount. It is produced by sintering in air or oxygen atmosphere. However, when manufacturing a large-size ITO target, the production equipment required for molding and sintering is larger than the conventional one, so new capital investment is required.
Since the moldability of the powder deteriorates as the size increases, the yield is extremely reduced, and as a result, the production cost and productivity of the target are deteriorated.

[0005] Since other targets have similar disadvantages in terms of increasing the size, multi-split targets in which a plurality of target members are joined on a backing plate are being used as large targets. Generally, in such a multi-segment target, a gap (clearance) of about 0.2 to 1.0 mm is provided between two adjacent target members. This is provided in order to prevent the target members from colliding with each other and being damaged by thermal shrinkage generated in the process of cooling the bonding layer heated and melted at the time of the target bonding to room temperature thereafter.

[0006]

In the large-sized target as described above, unlike an integrated type target, there is a clearance in a divided portion between each target member, so that abnormal discharge is likely to occur near the divided portion, and particle Was causing the outbreak.

[0007] This is a remarkable phenomenon when sputtering is performed for a long time using an ITO target. As the cumulative sputtering time increases, black foreign substances called nodules precipitate on the target surface. It is known that this black deposit is likely to cause abnormal discharge during sputtering, and itself becomes a source of foreign matter (particles) on the surface of the thin film. As a result, when sputtering is performed for a long time, foreign matter defects gradually occur in the formed thin film, and this has caused a reduction in the production yield of flat panel displays such as liquid crystal display devices. In particular, in recent years, in the field of flat panel displays, high definition has been advanced, and such a foreign matter defect in a thin film has caused an operation failure of an element, and thus has been an important issue.

As a method of reducing nodules generated on the ITO target, a method of increasing the density of an ITO sintered body is known, and recently, a density of 7.0 g / cm ³ or more is used as a sputtering target. IT
An O sintered body is used.

However, in the case of the above-mentioned large multi-segment target, even if the sintering density of the individual target members is increased, there is a clearance in the division between the target members unlike the integral type target. However, abnormal discharge is likely to occur in the vicinity of the divided portion, resulting in a large number of nodules and an increase in particles.

Several methods have been proposed to reduce the abnormal discharge near the division. For example, 0.3
A method of filling a clearance between respective target members of a multi-segmented ITO target having a gap of about 2 mm with an indium-tin alloy having an atomic ratio of indium to tin of the target body (for example, Japanese Patent Application Laid-Open No. 1-230768).
And a method of filling the clearance portion with metal indium has been proposed (for example, see Japanese Patent Application Laid-Open No.
No. 140552).

However, in these methods, the melting point of the filled metal or alloy (metal indium: 157 ° C .;
According to the description in JP-A-230768, the tin atomic ratio is 5 to 5.
20 wt. %, The melting point of the indium-tin alloy:
(Approximately 137 to 150 ° C.) is lower than the melting point of a commonly used bonding agent (indium solder: 157 ° C., Sn—Ag based high melting point bonding agent: 210 ° C.).

For this reason, when sputtering is performed by applying a high power density, the target surface is heated by plasma irradiation, and the filled alloy is softened or melted.
The sputtering speed in this part is increased, and the clearance is formed again. The new clearance formed by this sputtering becomes deeper with an increase in the sputtering time, causing an abnormal discharge, and as a result, there is a problem that particles increase. In particular, in recent years, there has been a tendency that sputtering is performed by applying a high power density to a target in an attempt to increase a film forming rate for the purpose of improving throughput, and the problem has become remarkable.

[0013]

The electric power supplied when a thin film is manufactured by the sputtering method is set to a temperature at which the bonding agent for bonding the target member and the backing plate does not dissolve. This is because, when an electric power is applied to dissolve the bonding agent, a serious problem occurs in which the target member falls off from the backing plate.

Based on the above facts, the present inventors have found that the presence of an alloy having a melting point sufficiently higher than the melting point of the material used for the bonding agent in the clearance allows the abnormal discharge and particles as described above to occur. We found that we could solve the problem of increase.

That is, according to the present invention, in a multi-split sputtering target formed by bonding a plurality of target members on a backing plate with a bonding agent, the clearance between the target members has a higher melting point than the bonding agent. In a multi-split sputtering target in which an alloy is present, and in a multi-split sputtering target formed by bonding a plurality of target members on a backing plate with a bonding agent, the temperature is lower than the melting point of the bonding agent. The present invention relates to a multi-split sputtering target in which an alloy capable of filling the clearance and having a melting point higher than the melting point of the bonding agent after the filling is present in the clearance.

Hereinafter, the present invention will be described in detail.

The material of the sputtering target used in the present invention can be used without any particular limitation. However, it is more suitable for materials used in the manufacture of flat panel displays, where the target size is expected to increase in the future. Examples of such a material include chromium, molybdenum, ITO (indium oxide), ZAO (aluminum-zinc oxide), and magnesium oxide.

For example, when manufacturing an ITO target, first, an ITO sintered body is manufactured by a commonly used method. The type and shape of the powder used to manufacture the sintered body,
The molding method and the sintering method are not particularly limited. However, in order to suppress the generation of nodules generated on the target surface, a material sintered at a higher density, for example, 7.0 g / cm.
^Three or more are preferred. Next, the obtained ITO sintered body is mechanically processed to obtain individual target members constituting a multi-split ITO target. Of the surface of each target member,
After the joining, the surface constituting the sputtering surface is subjected to a normal grinding process, and further subjected to a polishing process as necessary, so that the surface roughness Ra of the sputtering surface is 0.8 μm.
And Rmax is preferably 7 μm or less. By performing such a surface treatment, nodules generated on the sputtering surface of each target member can be effectively suppressed.

The backing plate material and the bonding agent for bonding the target member and the backing plate are not particularly limited either. For example, the backing plate material is copper, copper alloy, titanium, molybdenum, etc., and the bonding agent is indium. Solder, Sn-Ag solder, In-Pb
Solder and the like can be given.

Further, as an alloy having a melting point higher than the bonding agent to be filled in the clearance between the target members, the clearance between the target members can be filled at a temperature lower than the melting point of the bonding agent. An alloy having a melting point higher than the melting point of the bonding agent is particularly preferable. Such alloy systems include In-Bi and In-Bi.
-Bi-Sn, In-Bi-Sn-Pb, In-Bi-
Sn-Cd-Pb, Bi-Sn-Cd-Pb, Ga-I
one system selected from n-Sn, Ga-In, and In-Bi-Ga; at least one metal component selected from groups 4 and 8 to 11 of the periodic table; An alloy composed of at least one metal component selected from Group 13 to Group 15, for example, an In-Sn-Cu-Ga alloy can be given.

Hereinafter, In-Sn-Cu- is used as a filling material.
The case where a Ga alloy is used will be described as an example.

First, a target member is manufactured according to a conventional method. For example, when manufacturing a chromium target, H
After obtaining a chromium sintered body by the IP method (hot isostatic pressing), the obtained sintered body is mechanically worked to obtain individual target members constituting a multi-split target.
The case of manufacturing the O target is as described above.

Next, the obtained target members are joined to the backing plate. When joining, the backing plate coated with the bonding agent is heated above the melting point of the bonding agent used to dissolve the bonding layer on the surface, and then each target member heated to the same temperature is placed in a predetermined position After doing
Cool to room temperature. At this time, it is preferable to provide a clearance of 0.2 to 0.8 mm between each target member in order to prevent damage to the target member due to heat shrinkage during cooling of the bonding layer. By providing the clearance in such a range, it is possible to prevent the adjacent target members from colliding with each other due to heat shrinkage during the cooling of the bonding layer and to be damaged. Fluctuations in the resistance value of the formed thin film (influence of the alloy to be filled) can be reduced, and a uniform film can be formed.

Incidentally, in order to improve the wettability between the bonding agent and the target member, the bonding agent may be previously applied to the bonding surface of the target member with an ultrasonic soldering iron or the like.

FIG. 1 shows a state of the divided portion of the target when the joining of the target members is completed. In the drawing, 1 is a backing plate, 2 is a bonding layer, 3 is a target member, and 4 is a clearance.

Subsequently, I
n-Bi, In-Bi-Sn, In-Bi-Sn-P
b, In-Bi-Sn-Cd-Pb, Bi-Sn-Cd
-Pb, Ga-In-Sn, Ga-In and In-B
one system selected from i-Ga, at least one metal component selected from group 4 and 8 to 11 of the periodic table, and selected from group 13 to 15 in the periodic table An alloy consisting of at least one metal component, here an alloy consisting of indium, tin, copper and gallium, is filled, for example, first of all with an alloy of copper and tin and a low alloy of gallium, tin and indium. Manufacture melting point alloy.

The method for producing the alloy powder of copper and tin is not particularly limited. For example, copper and tin powders may be mechanically alloyed using a planetary ball mill or the like, or commercially available alloy powders may be used. The ratio of tin in the alloy is 10-30 wt.% To control the rate of the alloying reaction and to ensure a sufficient filling time. % Is preferred. The particle size of the alloy powder is preferably 25 μm to 35 μm in order to control the speed of the alloying reaction and secure a sufficient filling time.

As a method for producing a low melting point alloy of gallium, tin and indium, for example, gallium is melted at a temperature not lower than its melting point (29.8 ° C.), preferably 120-13 ° C.
A method of mixing and dissolving indium and tin after heating to 0 ° C. to dissolve can be exemplified.

The ratio of gallium, tin and indium forming the low melting point alloy is 62.5 Ga: 2 which is the eutectic point.
The vicinity of 1.5In: 16.0Sn (weight ratio) is particularly preferable, but even if each composition fluctuates up to 20%, the obtained low melting point alloy can be used in the present invention. The eutectic liquid has a melting point of about 10 ° C. by using such a eutectic composition.

Next, the copper-tin alloy powder and the low melting point alloy are mixed. The mixing ratio between the alloy powder and the low melting point alloy is such that Cu is 1.25 of Ga in order to sufficiently react Cu and Ga.
It is preferable to adjust the amount (atomic ratio) to be twice or more. After the mixing, the alloying reaction (intermetallic compound forming reaction) proceeds slowly. Immediately after mixing, the mixture is in the form of a paste, but the reaction is completed within 2 to 48 hours after mixing, and in one week depending on the mixing ratio, and solidifies. The softening point of the solidified alloy is
Although it depends on the composition ratio, for example, tin in the copper-tin alloy powder is 20 wt. %, And when a low melting point alloy having a eutectic composition is used, the temperature is about 500 ° C.

Therefore, immediately after mixing, since the paste is in the form of a paste, it can be easily filled into the clearance at room temperature.
After filling the clearance, it may be left as it is and solidified.

In order to improve the wettability between the alloy to be filled and the target member, a base layer of, for example, indium solder or the like may be formed in advance on the clearance surface of the target member using an ultrasonic soldering iron or the like.

FIG. 2 shows the state of the target dividing portion when the filling is completed. Reference numeral 5 in the figure indicates a portion filled with an alloy composed of indium, tin, copper, and gallium.

As the low melting point alloy, Ga-In-
In addition to Sn alloys, In-Bi, Bi-Sn-In, Bi
-Cd-Sn-Pb, Bi-Sn-Pb-In, Bi-
Cd-Sn-Pb-In, Ga-In and In-Bi
A -Ga-based alloy can be used. As a preferable composition in each system, the above-mentioned eutectic composition and the vicinity thereof are good, and for example, the following compositions can be exemplified (all in a weight ratio).

In-33.7BiBi-17Sn-25InBi-10Cd-13.3Sn-26.7PbBi-11.6Sn-18Pb-21In Bi-5.3Cd-8.3Sn-22.6Pb-19.
1InGa-24.5In and Ga-5InIn-32.10Bi-4.76Ga.

In place of the copper-tin alloy powder, at least one metal component selected from Group 4 and Groups 8 to 11 of the periodic table and a metal component selected from Groups 13 to 15 of the periodic table are used. An alloy consisting of at least one metal component can be used.

In addition, groups 4 and 8 of the periodic table in the alloy powder are used.
At least one metal component selected from the group 11 to group 11 is preferably 60 to 80% of the alloy powder.

The metal components selected from Groups 4 and 8 to 11 of the periodic table include Ti, Fe, Co, Ni, C
u is preferable, and as a metal component selected from Groups 13 to 15 of the periodic table, Al, Ga, In, Ge, Sn, P
b and Bi are preferred. In the present invention, group 4 of the periodic table indicates a titanium group, and similarly, group 8 is an iron group, group 9 is a cobalt group, group 10 is a nickel group, group 11 is a copper group, group 13 is a boron group, Group 14 represents a carbon group, and Group 15 represents a nitrogen group.

In the systems other than In-Sn-Cu-Ga, the proportion of the low melting point metal is preferably 35 to 75% of the total weight of the low melting point metal and the alloy powder, more preferably 45%.
~ 65%.

[0040]

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto.

Example 1 A mixed powder obtained by mixing indium oxide powder and tin oxide powder at a weight ratio of 9: 1 was placed in a press mold, and the mixture was placed in a press mold.
The molded body obtained by processing at a pressure of kg / cm ² was 3 ton /
CIP treatment was performed at a pressure of cm ² to produce an ITO molded body. Next, this ITO molded body was sintered under normal pressure at 1500 ° C. for 5 hours in an oxygen atmosphere to obtain a 110 mmφ × 6.5 mmt IT
An O-sinter was obtained. When the density of the sintered body was measured by the Archimedes method, it was 7.1 g / cm ³ .

After the sintered body was machined into a shape of 4 inches φ × 6 mmt, the sintered body was cut in half to obtain two semicircular sintered bodies.

Next, in order to improve the wettability of the ITO sintered body with indium solder and an alloy composed of indium, tin, copper and gallium at the time of bonding,
Indium solder was previously applied to the bonding surface and the surface of the sintered body with respect to the clearance using an ultrasonic soldering iron. After that, the ITO sintered body and the backing plate were heated to 158 ° C. or higher, and indium solder was applied to each joint surface. Next, after arranging these sintered bodies so that the width of the clearance at the divided portion was 0.4 mm, the sintered bodies were cooled to room temperature to obtain targets. The width of the clearance after cooling was 0.3 mm.

Next, an alloy material to be filled in the divided portion was prepared. First, a low melting point alloy was prepared. 62.5Ga: 21.5 which is a eutectic point of gallium, tin and indium
In: 16.0 Sn (weight ratio) at a ratio of 120
C. to obtain a liquid low melting point alloy. The melting point of this low melting point alloy was 10 ° C.

Next, a commercially available 20 watt alloy is used for the alloy of copper and tin.
t. % Tin-containing copper-tin alloy powder was used and further pulverized to obtain a fine powder. The average particle size of the obtained alloy powder was 30 μm.

Next, 50.0 parts by weight of the obtained low melting point alloy and 44.5 parts by weight of the alloy powder were mixed at room temperature to form a paste, which was filled in the clearance of the ITO target.
The paste completely solidified after 48 hours.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the following conditions.

DC power: 5.2 W / cm ² Sputter gas: Ar + O ₂ gas pressure: 5 mTorr O ₂ / Ar: 0.1% When a sputtering test was continuously performed under the above conditions for 12 hours, nodules in the clearance were Did not occur.

Comparative Example 1 An ITO target having a divided portion was manufactured in the same manner as in Example 1. However, nothing was filled in the divided portion.

The obtained target was set in a vacuum apparatus and subjected to a continuous sputtering test for 12 hours under the same conditions as in Example 1. As a result, a large amount of nodules was generated in the divided portion.

Example 2 A metal chromium powder was sintered by the HIP method to produce a chromium sintered body. This is machined and 5 inches x
Two pieces of the sintered body having a size of 3.5 inches × 5 mmt were used.

Next, in order to improve the wettability of the chromium sintered body with the indium solder and the In—Sn—Cu—Ga alloy at the time of bonding, the surface of the sintered body with respect to the bonding surface and the clearance portion was previously prepared. On the other hand, indium solder was applied using an ultrasonic soldering iron. Thereafter, the chromium sintered body and the backing plate were heated to 158 ° C. or higher, and indium solder was applied to each joint surface.

Subsequently, these sintered bodies were arranged so that the width of the clearance of the divided portion was 0.4 mm, and then cooled to room temperature to obtain a target. The width of the clearance after cooling was 0.3 mm.

Next, an alloy material to be filled in the divided portion was prepared. First, a low melting point alloy was prepared. 62.5Ga: 21.5 which is a eutectic point of gallium, tin and indium
In: 16.0 Sn (weight ratio) at a ratio of 130
C. to obtain a low melting point alloy which was liquid at room temperature. The melting point of this low melting point alloy was 10 ° C.

Next, a commercially available 20 watt copper-tin alloy is used.
t. % Tin-containing copper-tin alloy powder was used and further pulverized to obtain a fine powder. The average particle size of the obtained alloy powder was 30 μm.

Next, 50.0 parts by weight of the obtained low melting point alloy and 44.5 parts by weight of the alloy powder were mixed at room temperature to form a paste, which was filled in the clearance of a chromium target.
The paste completely solidified after 48 hours.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the following conditions.

DC power: 8.5 W / cm ² Sputter gas: Ar gas pressure: 5 mTorr The sputtering test was continuously performed for 40 hours under the above conditions, but the abnormal discharge increased and the number of particles adhered to the substrate increased. Was not found.

Example 3 A mixture of zinc oxide powder and aluminum oxide powder in a weight ratio of 9
The mixed powder mixed at a ratio of 8: 2 was put into a press mold, and a molded product obtained by working at a pressure of 300 kg / cm ² was subjected to CIP treatment (cold isostatic pressing) at a pressure of 3 ton / cm ^2. To produce a ZAO compact. Next, this ZAO compact was sintered under normal pressure at 1500 ° C. for 5 hours in an oxygen atmosphere.
A ZAO sintered body of 0 mmφ × 6.5 mmt was obtained.

The sintered body was machined to form a 5 inch ×
Two pieces of the sintered body having a size of 3.5 inches × 5 mmt were used.
Next, in order to improve the wettability of the ZAO sintered body with the indium solder and the In—Sn—Cu—Ga alloy when performing bonding, the ZAO sintered body is previously superposed on the bonding surface and the surface with respect to the clearance portion. Indium solder was applied using a sonic soldering iron.

After heating the ZAO sintered body and the backing plate to 158 ° C. or higher, indium solder was applied to each joint surface. Next, after arranging these sintered bodies so that the width of the clearance at the divided portion was 0.4 mm, the sintered bodies were cooled to room temperature to obtain targets.
The width of the clearance after cooling was 0.3 mm.

Next, an alloy material to be filled in the divided portion was prepared. First, a low melting point alloy was prepared. 62.5Ga: 21.5 which is a eutectic point of gallium, tin and indium
In: 16.0 Sn (weight ratio) at a ratio of 120
C. to obtain a low melting point alloy which was liquid at room temperature. The melting point of this low melting point alloy was 10 ° C.

Subsequently, commercially available alloys of copper and tin were used.
wt. % Tin-containing copper-tin alloy powder containing
This was further pulverized to obtain a fine powder. The average particle size of the obtained alloy powder was 30 μm.

Next, 50.0 parts by weight of the obtained low melting point alloy and 44.5 parts by weight of the alloy powder were mixed at room temperature to form a paste, which was filled in the clearance of the ZAO target.
The paste completely solidified after 48 hours.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the following conditions.

DC power: 5.2 W / cm ² Sputter gas: Ar + O ₂ gas pressure: 5 mTorr O ₂ / Ar: 0.2% A sputtering test was continuously performed for 15 hours under the above conditions. No increase in abnormal discharge and no increase in the number of particles attached to the substrate were observed.

Comparative Example 2 In the same manner as in Example 2, a chromium target having a clearance of 0.3 mm was manufactured. However, nothing was filled in the clearance portion.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the same conditions as in Example 2. Many abnormal discharges were observed from the beginning of sputtering. Also, the number of particles attached to the substrate was large.

Comparative Example 3 In the same manner as in Example 2, a chromium target having a 0.3 mm clearance was manufactured. However, at the time of joining the target member and the backing plate, the clearance was also filled with indium solder.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the same conditions as in Example 2. Until 20 hours after the start of sputtering, abnormal discharge was small and the number of particles attached to the substrate was very small. However, abnormal discharge and the number of particles adhering to the substrate gradually increased after the elapse of 20 hours. Observation of the target after completion of the test revealed that the filled indium was sputtered faster than the surrounding chromium, and a new clearance was formed.

Comparative Example 4 In the same manner as in Example 3, a ZAO target having a clearance of 0.3 mm was manufactured. However, nothing was filled in the clearance portion.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the same conditions as in Example 3. From the beginning of the sputtering, many abnormal discharges caused by the divided portions were observed. Also, the number of particles attached to the substrate was large.

Comparative Example 5 In the same manner as in Example 3, a ZAO target having a clearance of 0.3 mm was manufactured. However, at the time of joining the target member and the backing plate, the clearance was also filled with indium solder.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the same conditions as in Example 3. Up to 7 hours after the start of sputtering, abnormal discharge due to the divided portion was small, and the number of particles attached to the substrate was very small. However, gradually after 7 hours,
Abnormal discharge and the number of particles attached to the substrate increased. Observation of the target after completion of the test revealed that the filled indium was sputtered faster than the surrounding chromium, and a new clearance was formed.

Example 4 In the same manner as in Example 1, an ITO target having a divided portion filled with an indium-tin-copper-gallium alloy was produced. A thin film was produced using the obtained target. The film forming conditions are as follows: substrate temperature: room temperature DC power: 5.2 W / cm ² sputtering gas: Ar + O ₂ gas pressure: 5 mTorr O ₂ / Ar: 0.2% Film thickness: 50 nm Resistivity and transmittance of the obtained thin film The etching rate was examined. Table 1 shows the results.

The resistivity was measured by a four probe method.
The transmittance was measured as a value of a thin film alone using a spectrophotometer and a glass substrate as a reference.

The etching rate was determined by calculating the amount of film loss after dipping a thin film for 5 seconds in hydrochloric acid as an etching solution.

Comparative Example 6 In the same manner as in Comparative Example 1, the divided portion was filled with nothing.
A TO target was prepared, a thin film was prepared in the same manner as in Example 4, and the resistivity, transmittance, and etching rate of the obtained thin film were examined. Table 1 shows the results.

From the results of Example 4 and Comparative Example 6 shown in Table 1, even if a target in which the divided portion was filled with an indium-tin-copper-gallium alloy was used, a thin film equivalent to that without any filling was obtained. It became clear that characteristics could be obtained.

[0080]

[Table 1]

Example 5 In the same manner as in Example 1, an ITO target having a clearance of 0.3 mm was manufactured.

Next, an alloy material to be filled in the divided portion was prepared. First, a low melting point alloy was prepared. These were mixed at a ratio of 75.5Ga: 24.5In (weight ratio) which becomes a eutectic of gallium and indium at 100 ° C. to obtain a liquid low melting point alloy.

Next, commercially available 20 watts are used for copper and tin alloys.
t. % Tin-containing copper-tin alloy powder was used and further pulverized to obtain a fine powder. The average particle size of the obtained alloy powder was 30 μm.

Next, 100 parts by weight of the obtained low melting point alloy and 107 parts by weight of the alloy powder were mixed at room temperature to form a paste, which was filled in the clearance of the ITO target. The paste completely solidified after 50 hours.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the same conditions as in Example 1 for 12 hours. Nodules did not occur in the clearance area.

Example 6 An ITO target having a clearance of 0.3 mm was manufactured in the same manner as in Example 1.

Next, an alloy material to be filled in the divided portion was prepared. First, a low melting point alloy was prepared. 62.5Ga: 21.5I which becomes eutectic of gallium, indium and tin
n: 16.0 Sn (weight ratio) at 120 ° C.
To obtain a liquid low melting point alloy.

Next, 20 wt. % Germanium-containing copper-germanium alloy powder was further pulverized to obtain a fine powder. The average particle size of the obtained alloy powder was 30 μm.

Next, 50 parts by weight of the obtained low melting point alloy and 44.5 parts by weight of the alloy powder were mixed at room temperature to form a paste, which was filled in the clearance of the ITO target. The paste completely solidified after 48 hours.

The obtained target was set in a vacuum apparatus, and sputtering was performed under the same conditions as in Example 1 for 12 hours. Nodules did not occur in the clearance area.

[0091]

By using the multi-split target of the present invention, even if the target has a split portion, the occurrence of abnormal discharge due to the split portion and the adhesion of particles due to the abnormal discharge can be reduced. In particular, when an ITO target is used, the generation of a large amount of nodules near the divided portion during sputtering can be effectively suppressed.

Furthermore, since the filling metal has a high melting point, the effect is effective until the life of the target, and the filling operation can be performed near room temperature, so that the filling operation becomes easy.

Further, the resistivity, transmittance and etching rate of a thin film obtained when the above technique is applied to an ITO target are equivalent to those of a thin film manufactured using a normal ITO target.

[Brief description of the drawings]

FIG. 1 is a view showing a state of a divided portion of a target when bonding of a target member is completed.

FIG. 2 is a diagram showing a state of a target dividing part when filling is completed.

[Explanation of symbols]

 1: backing plate 2: bonding layer 3: target member 4: clearance 5: filling portion

Claims (19)

[Claims] In a multi-sputtering target formed by bonding a plurality of target members on a backing plate with a bonding agent, an alloy having a higher melting point than the bonding agent is present in a clearance between the target members. Multi-sputtering target. 2. A multi-sputtering target formed by bonding a plurality of target members on a backing plate with a bonding agent, wherein the clearance between the target members can be filled at a temperature lower than the melting point of the bonding agent,
After filling is completed, a multi-split sputtering target in which an alloy having a melting point higher than the melting point of the bonding agent is present in the clearance. 3. The alloy existing in the clearance is In-S
The multi-split sputtering target according to claim 1 or 2, which is an n-Cu-Ga alloy. 4. The multi-split sputtering target according to claim 1, wherein the target member is an ITO target. 5. A method of manufacturing a multi-split target comprising a plurality of target members joined on a backing plate with a bonding agent, wherein an alloy having a higher melting point than the bonding agent is provided in a clearance between the target members. A method for producing a multi-split sputtering target, comprising providing a layer. 6. A multi-sputtering target manufacturing method comprising joining a plurality of target members on a backing plate with a bonding agent, wherein a clearance between the target members is set at a temperature lower than the melting point of the bonding agent. A method for manufacturing a multi-split sputtering target, characterized by providing an alloy layer capable of filling a clearance between target members and having a melting point higher than a melting point of a bonding agent after the filling is completed. 7. The method according to claim 5, wherein the alloy layer having a higher melting point than the bonding agent is an In—Sn—Cu—Ga alloy. 8. A method for manufacturing a multi-split sputtering target formed by bonding a plurality of target members on a backing plate with a bonding agent, wherein: (1) a step of manufacturing an alloy of tin and copper; and (2) indium. , Gallium, and tin,
Step of manufacturing a low-melting alloy having a melting point lower than that of the bonding agent (3) The alloy obtained in (1) and the low-melting alloy obtained in (2) are melted at a temperature equal to or higher than the melting point of the low-melting alloy. A step of mixing and forming a paste at the following temperature: (4) a step of filling the paste obtained in (3) into the clearance between the target members; and (5) a step of solidifying the paste after filling. Production method. 9. The method according to claim 5, wherein the target member is an ITO target. 10. The alloy existing in the clearance is In
-Bi, In-Bi-Sn, In-Bi-Sn-Pb,
In-Bi-Sn-Cd-Pb, Bi-Sn-Cd-P
b, Ga-In-Sn, Ga-In and In-Bi-
One system selected from Ga, at least one metal component selected from Groups 4 and 8 to 11 of the periodic table, and at least one metal component selected from Groups 13 to 15 of the periodic table; The multi-split sputtering target according to claim 1 or 2, which is an alloy comprising two metal components. 11. At least one metal component selected from Group 4 and Groups 8 to 11 of the periodic table is Ti, F
The multi-sputtering target according to claim 10, wherein the sputtering target is selected from e, Co, Ni, and Cu. 12. At least one metal component selected from groups 13 to 15 of the periodic table is Al, Ga, I
The multi-split sputtering target according to claim 10, wherein the sputtering target is selected from n, Ge, Sn, Pb, and Bi. 13. The multi-split sputtering target according to claim 10, wherein the target member is an ITO target. 14. An alloy layer having a melting point higher than that of a bonding agent is made of In-Bi, In-Bi-Sn, In-Bi-Sn.
-Pb, In-Bi-Sn-Cd-Pb, Bi-Sn-
Cd-Pb, Ga-In-Sn, Ga-In and In
-One system selected from Bi-Ga and 4 in the periodic table
6. An alloy comprising at least one metal component selected from Group 13 and Groups 8 to 11 and at least one metal component selected from Groups 13 to 15 of the periodic table.
Alternatively, the method for manufacturing a multi-split sputtering target according to claim 6. 15. A method for manufacturing a multi-split sputtering target formed by bonding a plurality of target members on a backing plate with a bonding agent, comprising: (1) selecting from group 4 and group 8 to 11 of the periodic table; At least one selected metal component and 13-1 of the periodic table
(2) a step of producing an alloy with at least one metal component selected from Group V; (2) a step of producing a low melting point alloy having a lower melting point than the bonding agent; Mixing and pasting the low-melting alloy obtained in 2) at a temperature not lower than the melting point of the low-melting alloy and not higher than the melting point of the bonding agent; Step of filling the clearance (5) A method of manufacturing a multi-split sputtering target, comprising a step of solidifying the paste after filling. 16. A low melting point alloy having a melting point lower than that of the bonding agent is In-Bi, In-Bi-Sn, In-Bi.
-Sn-Pb, In-Bi-Sn-Cd-Pb, Bi-
The multi-sputtering target according to claim 15, wherein the sputtering target is one selected from Sn-Cd-Pb, Ga-In-Sn, Ga-In, and In-Bi-Ga. 17. At least one metal component selected from Group 4 and Groups 8 to 11 of the periodic table is Ti, F
The multi-sputtering target according to claim 15, wherein the target is selected from e, Co, Ni, and Cu. 18. At least one metal component selected from Groups 13 to 15 of the periodic table is Al, Ga, I
The multi-split sputtering target according to claim 15, wherein the sputtering target is selected from n, Ge, Sn, Pb, and Bi. 19. The method according to claim 14, wherein the target member is an ITO target.