201237203 - 六、發明說明： 、 【發明所屬之技術領域】 本發月疋有關接合複數個乾構件而得之分割減鑛把， 尤其是有關在乾構件為由氧化物半導體構成之際適用之分 割濺鍍靶。 【先前技術】 近年，濺鍍法在製造資訊機器、AV機器、家電製品等 各種電子零組件之際用得报多，例如，在液晶顯示裝置等 ^顯示裝置中，薄臈電晶體（簡稱TFT)等之半導體元件就 是藉由濺鑛法形成。因為濺鍍法是極為有效的將構成透明 電極層等之薄膜，以大面積、高精度形成的製法。 然而，最近之半導體元件中，以IGZ〇(in_Ga_Zn_〇) 所代表的氧化物半導體取代非結晶石夕甚受注目。於是，關 於此氧化物半導體’也被列入利用麟法進行氧化物半導 體薄膜成膜之計畫中。然而，濺鑛時使用之氧化物半導體 的濺鍍乾，由於其素材是陶究，故很難以一片乾構件構成 大面積的乾。因此，準備複數片具有某程度大小之氧化物 半導體把構件’並在具有所期望面積之背板上進行接合， 以製造大面積的氧化物半導體雜乾（例如，參照專利文獻 1)。 此濺鍍粑的背板，通常使用銅製的背板，該背板與靶 構件之接合係使用熱傳導良好的低熔點焊錫，例如In系之 金屬。例如，在製造大面積、板狀的氧化物半導體濺鍍靶 之際’準備A面積的鋼製背板，將此背板表面分成複數區 3 323359 201237203 域:準備賴片符合㈣域面積之氧化物半導錄構件。 :疋’在背板上配置複數錄構件，藉由In系或％系金 屬的低炫點_，將全部之_件在背板上進行接合。接 合之際，考慮Cu與氧化物半導體之熱膨脹差，在鄰接之靶 構件間，以在室溫時可形成G.lmm至1()mm間隙之方 整配置- 使用如此將複數氧化物半導體靶構件接合而得之分割 濺鍍靶，並藉由濺鍍使薄膜成膜而形成半導體元件時，在 濺鍍處理中，從靶構件間的間隙使背板之構成材料Cu也被 濺鍍，有所謂混入形成的氧化物半導體薄膜中之問題的疑 慮。薄膜中的Cu雖僅有數ppm程度的混入量，但對氧化物 半導體之影響極大，例如，TFT元件特性中的電場效果移 動度，在相當於靶構件間的間隙位置所形成的半導體元件 (混入Cu之薄膜）’與其他部分的半導體元件相比，有變低 之傾向，0N/0FF比也有變低之傾向。如此不妥當現象，被 指責為以往大面積化傾向的主要阻礙原因，目前要求急速 改善技術。再者’如此之分割濺鍍靶的問题，係即使在靶 構件為氧化物半導體以外的材質時，也有產生同樣不妥當 現象之可能性’為了促進濺鍍靶的大面積化，是必需解決 的課題。 [先前技術文獻] (專利文獻） 專利文獻1 :日本特開2005—232580號公報 【發明内容】 4 323359 201237203 [發明欲解決之課題] 本發明是在如以上事情之背景下所成者，以提供一種 分割濺鍍靶為目的，係具有大面積的濺鍍靶，藉由將複數 靶構件接合而得之分割濺鍍靶，經由濺鍍形成薄膜時，可 以有效防止背板的構成材料混入成膜之薄膜中。 [解決課題之手段] 為了解決上述課題，本發明之特徵係在背板上，藉由 低熔點焊錫接合複數個靶構件而形成的分割濺鍍靶中，沿 著接合之靶構件間所形成的間隙，在背板上設置保護體。 依據本發明，在背板上接合之靶構件間所形成的間隙，並 未露出背板表面，可以有效地防止背板之結構材料被濺鍍。 本發明中之保護體，係指覆蓋在背板上已接合之靶構 件間所形成的間隙處露出的背板表面者，係指具有使對成 膜之薄膜具有不良影響的物質，在濺鍍時不由間隙發生之 作用者。作為如此之保護體，係在背板表面，配置帶狀的 保護構件，或是將成為保護體之物質，藉由塗布、鍍覆、 濺鍍等方法設置，以氧化背板本身之表面形成氧化被膜而 設置。尤其，本發明中，保護體是以配置帶狀的保護構件 為佳。 作為如此保護體之材質，即使混入成膜之薄膜中也不 會賦與不良影響的物質，例如，可以使用構成靶構件的組 成元素中的全部或一部分、含有此等元素之合金或氧化物 等。 又，作為別的材質者，係在濺鍍時可以抑制間隙内部 5 323359 201237203 的濺鍍現象之物質，例如，可以使用其體積電阻比靶構件 大的物質，亦即將高電阻物質作為保護體。將如此高電阻 物質作為保護體使用時’高電阻物質的體積電阻率（Ω .cm) 以具有靶構件的體積電阻率10倍以上值之物質為佳。 又，關於上述保護體之材質，此材質之化學組成與為 了與背板接合而使用的低熔點焊锡之化學組成在實質上是 相異者。例如，將金屬銦作為低熔點焊錫使用時，此時的 保濩體是指不是金屬銦之意思。又，在靶構件間之間隙， 雖有殘留低熔點焊錫的金屬銦之情形，但在此間隙殘留的 銦固化之際，其表面會氧化。在如此接合中使用之低熔點 焊錫的金屬銦於間隙中固化之情形，在該銦表面由於難以 形成均勻的氧化膜，故不能發揮與作為上述本發明的保護 體的高電阻物質的同樣效果。 本發明中之分割濺鍍靶，係以板狀、圓筒狀者作為對 象。板狀之錢鍛乾是在板狀背板上，將具有方形面之複數 板狀構件平面配置後接合者作為對象。又，圓筒狀之賤 鍵靶是在圓筒狀背板上，將複數圓筒狀乾構件（中空圓柱） 貫通’在圓筒狀背板之圓柱軸方向配置成多段狀並且接合 者’或是，將中空圓柱沿圓柱軸方向縱向割切之彎曲狀把 構件’往圓筒狀背板之外側面，在圓周方向複數並列並經 接合者為對象。此板狀或圓筒狀之分割濺鍍靶，在大面積 的濺鍍裝置中用得很多。又’本發明雖是以板狀、圓筒狀 之形狀作為對象’但並不妨礙對其他形狀的分割濺錢乾之 應用，有關靶構件並未限制為此形狀。因此，關於乾構件 6 323359 201237203 - 之組成’也可以適用IGZ0或ΖΤ0等氧化物半導體或透明電 • 極（ΙΤ0)或Α1等金屬’靶構件之組成方面也沒有限制。 本發明中之保護體，係以Zn、Ti、Sn任何一種金屬 箔’或是含有80質量％以上之Zn、Ti、Sn中任何一種以上 之金屬箔，或是陶瓷薄片或高分子薄片為宜。只要是如此 之金屬硒或陶瓷薄片，與In系或Sn系金屬之低溶點焊錫 的反應性低，氧化物半導體成膜之情形，即使微量地混入 成膜之氧化物半導體薄膜中，與Cu比較，對TFT元件特性 之影響也可以變少。 又，由於高分子薄片是高電阻物質，故在濺鍍時，於 把構件間的間隙中能抑制減鍵現象，可以防止對成犋之薄 膜的不良影響。作為陶瓷薄片者，可以使用氧化鋁或氧化 矽系之薄片。作為本發明中高分子薄片的材質者，可以列 舉：酚樹脂、美耐敏（三聚氰胺）樹脂、環氧樹脂、脲醛樹 脂、氯化乙烯樹脂、聚乙烯、聚丙烯等合成樹脂材料；或 是聚乙烯、聚氯化乙烯、聚丙豨、聚苯乙烯等泛用塑膠材 料·，聚醋酸乙烯醋、ABS樹脂、AS樹脂、丙烯酸樹脂^準 泛用塑膠材料等。再者，也可以使用聚甲駿、聚碳酸酉旨、 改質聚苯基趟（PPE)、聚對苯二甲酸二丁酉旨等工程塑膠；或 是聚芳基酸醋（Polyarylate)、聚砜、聚苯基硫化物、聚峻 醚酮、聚醯亞胺樹脂、氟素樹脂等超工程塑膠。尤其，聚 酿亞胺樹脂等也是帶狀之材料，由於耐熱性、絕緣性也高， .故為適用於本發明者。 金屬；I或是陶曼薄片、或是高分子薄片的厚度是以 7 323359 201237203 0. 0001mm至1. Omm為佳。金屬箔或是陶瓷薄片的寬度是與 在靶構件間所形成的間隙相同，或是此以上之寬度為佳， 考慮到作業性等時，以在5. Omm至20mm寬度為佳。又，在 背板上配置Zn、Ti、Sn之任一金屬箔，或是含有80質量°/〇 以上之Zn、Ti、Sn之任一種以上之合金箔，或是陶瓷薄片 或高分子薄片時，可以使用低熔點焊錫或導電性兩面膠帶 專加以黏貼。 本發明中之保護體，係以具有將帶狀之第1保護構件 與帶狀之第2保護構件的積層結構為佳，積層有如此之帶 狀保護構件之結構時，可以容易進行製造本發明相關之分 割濺鍍靶，可以配合靶構件或背板的材質適當選擇第1保 護構件與第2保護構件之材質。此第1保護構件與第2保 護構件之帶狀寬度可以相等，也可以相異。又，此積層結 構之保護體，係使第1保護構件在靶構件側、第2保護構 件在背板側之狀態，沿著接合之靶構件間所形成的間隙配 置。 本發明中之保護體藉由帶狀的保護構件來設置之情形， 積層狹幅之第1保護構件與寬幅之第2保護構件，可以作 成在第1保護構件之兩端侧露出第2保護構件的結構。在 此結構，變成於寬幅之第2保護構件之上積層狹幅的第1 保護構件之二層結構。乾構件與背板的接合雖藉由In或 Sn等低熔點焊錫來進行，但可預想藉由接合時之加熱處理， 保護構件與低熔點焊錫反應而合金化。為了反覆使用此接 合的低熔點焊錫，使用頻率變高時，藉由與保護構件之合 8 323359 201237203 2二低溶點焊錫的組成會產生變動，㈣件與背板之接 二支付不充分’被認為對接合強度或接合面積有 二4在此’選擇與低熔點焊錫*反應之材料作為第2保错 伴:蒦椹藉由在其上設置與低熔點焊錫容易反應材料之第°1 :她牛，則能抑制第i保護構件與低熔點 ： 可以防止低熔點焊錫的組成變動。 接觸， 本發财，積層帶狀保護構件而設置保 =護構件的厚度是以。.麵丽至。、為佳： ，保護構件的合計厚度是〇.3…^ =同寬度之第丨保護構件與第2保護構件時7 = 窗寬度是以5丽至30mm為佳。積層狹幅的第 =二 寬鴨的第2保護構件時，第丨保護構件 ^構件與 =成的間隙相同、或是比此大之寬度為; 生等時，以5mm至20晒為佳。寬幅的第2保二 度从比第1保護構件的寬度寬3mm至1〇 mm為佳。的寬 本發明中之保護體，也可以是由第丨_構_ 保護構件的兩端側並列配置之第2保、 艺結構。如此，在第i保護構件的兩側並列^ 構件時，變成與積層上述狹幅與寬幅的保護 麻、 保護體發揮同樣效果。又，第1保護構件的兩; 一曰帶狀之第1保護構件的長方向延伸的兩邊 =結構的保護體時，帛i保護構件及第2保護構件 -疋以〇· 0001賴至L 〇mm為佳。又，第丨保護構件的寬： 323359 9 201237203 =與構件間形成的間隙相同、或是比此大之寬度為 件的宫=作業性等時，以5_至2Gmm為佳。第2保護構 件的寬度疋以3_至10mm為佳。 形中保護體作成上述二層結構或是三列結構的情 的任保護構件作成由cu、M、Ti、Ni、Zn、Cr、Fe 將第二：屬或是含有此等之任何合金所成的金屬结， -金屬件，、以含有減件所含元素的—種以上的單 為藉ά σ金或喊材料形成者為佳。本發明中乾構件 =由氧化物㈣體所構成時，以構絲 含元素的—種所成之單—金屬或合金或是喊材料 I成第1保護構件為佳。 本發明中之保護體作成上述二層結構或是三列結構 …月形’第1保護構件以由含有Ιη、Ζη、Αι ϋ、τί、201237203 - VI. Description of the invention: [Technical field to which the invention pertains] The split ore reduction joint obtained by joining a plurality of dry members, especially for the division where the dry member is composed of an oxide semiconductor Sputter target. [Prior Art] In recent years, sputtering has been widely used in the production of various electronic components such as information equipment, AV equipment, and home electric appliances. For example, in liquid crystal display devices and other display devices, thin germanium transistors (TFTs for short) The semiconductor component is formed by a sputtering method. The sputtering method is a very effective method for forming a film of a transparent electrode layer or the like and forming it in a large area with high precision. However, in recent semiconductor elements, the replacement of amorphous crystals by an oxide semiconductor represented by IGZ〇(in_Ga_Zn_〇) has been attracting attention. Therefore, the oxide semiconductor is also included in the plan for film formation of an oxide semiconductor thin film by the lining method. However, the sputtering of the oxide semiconductor used in the sputtering is difficult, and it is difficult to form a large-area dry body with a dry member because the material is ceramic. Therefore, a plurality of oxide semiconductor mounting members having a certain size are prepared and joined on a backing plate having a desired area to manufacture a large-area oxide semiconductor inter-drain (for example, refer to Patent Document 1). The sputtered back sheet is usually made of a copper back sheet, and the back sheet is bonded to the target member using a low-melting solder having good heat conduction, such as an In-based metal. For example, in the manufacture of a large-area, plate-shaped oxide semiconductor sputtering target, a steel backing plate of A area is prepared, and the surface of the backing plate is divided into a plurality of regions. 3 323359 201237203 Field: Preparation of the lamella sheet conforms to the oxidation of the (4) domain area Semi-guide member. :疋' The multi-recording member is placed on the backplane, and all the components are joined on the backplane by the low-level _ of the In-based or %-based metal. At the time of bonding, considering the difference in thermal expansion between Cu and the oxide semiconductor, a square arrangement of G.lmm to 1 () mm gap can be formed between adjacent target members at room temperature - the use of such a plurality of oxide semiconductor targets When a sputtering target is divided by a member and a thin film is formed by sputtering to form a semiconductor element, in the sputtering process, the constituent material Cu of the backing plate is also sputtered from the gap between the target members. There is a concern about the problem of mixing into the formed oxide semiconductor film. Although the amount of Cu in the film is only a few ppm, the influence on the oxide semiconductor is extremely large. For example, the degree of mobility of the electric field effect in the characteristics of the TFT element is a semiconductor element formed at a position corresponding to a gap between the target members (mixed in The film of Cu) has a tendency to become lower than that of other semiconductor elements, and the 0N/0FF ratio tends to be lower. Such an inappropriate phenomenon has been accused of being the main obstacle to the trend of large-area in the past, and it is now demanding rapid improvement of technology. In addition, when the target member is made of a material other than an oxide semiconductor, there is a possibility that the same problem may occur. In order to promote a large area of the sputtering target, it is necessary to solve the problem. Question. [Prior Art Document] (Patent Document) Patent Document 1: Japanese Laid-Open Patent Publication No. 2005-232580 [Draft of the Invention] 4 323359 201237203 [Problem to be Solved by the Invention] The present invention has been made in the context of the above, Provided is a sputtering target having a large area, and a sputtering target which is obtained by joining a plurality of target members and a sputtering target formed by sputtering can effectively prevent a constituent material of the backing sheet from being mixed into In the film of the film. [Means for Solving the Problem] In order to solve the above problems, the present invention is characterized in that a split sputtering target formed by bonding a plurality of target members by a low melting point solder is formed along a backing plate along a target member to be joined between the bonded target members. Clearance, set the protection body on the back plate. According to the present invention, the gap formed between the target members joined on the backing plate does not expose the surface of the backing plate, and the structural material of the backing plate can be effectively prevented from being sputtered. The protective body in the present invention refers to a surface of the back sheet which is exposed at a gap formed between the bonded target members on the back sheet, and has a substance which has an adverse effect on the film formed by the film, and is sputtered. When the gap does not occur. As such a protective body, a strip-shaped protective member or a substance to be a protective body is disposed on the surface of the back sheet, and is oxidized by oxidizing the surface of the back sheet itself by coating, plating, sputtering, or the like. Set by the film. In particular, in the present invention, the protective body is preferably a protective member in the form of a belt. As a material of such a protective body, even if it is mixed in the film formed into a film, it does not give a bad influence. For example, all or a part of the constituent elements constituting the target member, an alloy containing these elements, an oxide, or the like can be used. . Further, as a material, it is possible to suppress a sputtering phenomenon in the gap 5 323359 201237203 during sputtering, and for example, a material having a larger volume resistance than the target member, that is, a high-resistance substance can be used as a protective body. When such a high-resistance substance is used as a protective body, the volume resistivity (Ω.cm) of the high-resistance substance is preferably a substance having a value of 10 times or more the volume resistivity of the target member. Further, regarding the material of the protective body, the chemical composition of the material is substantially different from the chemical composition of the low melting point solder used for bonding to the back sheet. For example, when metal indium is used as a low melting point solder, the protective body at this time means not metal indium. Further, in the case of the gap between the target members, although the metal indium of the low melting point solder remains, the surface of the gap is oxidized when the indium remaining in the gap is solidified. In the case where the metal indium of the low-melting-point solder used for the bonding is solidified in the gap, it is difficult to form a uniform oxide film on the surface of the indium, so that the same effect as the high-resistance substance as the protective body of the present invention described above cannot be exhibited. The split sputtering target in the present invention has a plate shape or a cylindrical shape as an object. The plate-shaped money forging is performed on a plate-shaped back plate, and a plurality of plate-like members having a square face are arranged in a plane and then joined. Further, the cylindrical yoke target is a cylindrical back plate in which a plurality of cylindrical dry members (hollow cylinders) are inserted in a plurality of stages in the direction of the cylindrical axis of the cylindrical back plate and joined together' or In the curved shape in which the hollow cylinder is cut longitudinally in the direction of the cylindrical axis, the member is 'to the outer side of the cylindrical back plate, and is juxtaposed in the circumferential direction and is joined by the joint. This plate-shaped or cylindrical split sputtering target is used in a large-area sputtering apparatus. Further, the present invention is applied to a plate-like or cylindrical shape, but does not hinder the application of splitting and splashing of other shapes, and the target member is not limited to this shape. Therefore, the composition of the dry member 6 323359 201237203 - can also be applied to the composition of an oxide semiconductor such as IGZ0 or ΖΤ0 or a metal electrode such as a transparent electrode (ΙΤ0) or Α1. The protective body in the present invention is preferably a metal foil of Zn, Ti or Sn or a metal foil containing at least 80% by mass of Zn, Ti or Sn, or a ceramic flake or a polymer flake. . As long as such a metal selenium or a ceramic flake is low in reactivity with a low-melting-point solder of an In-based or Sn-based metal, in the case where an oxide semiconductor is formed, even if it is minutely mixed into a film-forming oxide semiconductor film, Cu is formed. In comparison, the influence on the characteristics of the TFT element can be reduced. Further, since the polymer sheet is a high-resistance substance, it is possible to suppress the key reduction phenomenon in the gap between the members during sputtering, and it is possible to prevent adverse effects on the film formed. As the ceramic flake, an alumina or yttria-based sheet can be used. Examples of the material of the polymer sheet in the present invention include a phenol resin, a melamine resin, an epoxy resin, a urea resin, a vinyl chloride resin, a synthetic resin material such as polyethylene or polypropylene, or a polyethylene. , Polyvinyl chloride, polypropylene, polystyrene and other general-purpose plastic materials, polyvinyl acetate vinegar, ABS resin, AS resin, acrylic resin, quasi-universal plastic materials. In addition, it is also possible to use engineering plastics such as polymethyl phthalate, polycarbonate, modified polyphenyl fluorene (PPE), and polybutylene terephthalate; or polyarylate, polysulfone , Polyphenyl sulfide, polyetheretherketone, polyimide resin, fluorocarbon resin and other super engineering plastics. In particular, a polyvinyl imino resin or the like is also a belt-shaped material, and has high heat resistance and insulation properties, and is therefore suitable for use in the present inventors. Omm is preferably a thickness of 7 323359 201237203 0. 0001 mm to 1.0 mm. The width of the metal foil or the ceramic sheet is the same as the gap formed between the target members, or the width is preferably greater than the width of 5. Omm to 20 mm in consideration of workability and the like. Further, when any one of Zn, Ti, and Sn, or an alloy foil containing at least 80 mass%/〇 of Zn, Ti, or Sn, or a ceramic sheet or a polymer sheet, is disposed on the back sheet It can be adhered using low melting point solder or conductive double sided tape. In the protective body of the present invention, it is preferable to have a laminated structure in which a strip-shaped first protective member and a strip-shaped second protective member are laminated, and when such a strip-shaped protective member is laminated, the present invention can be easily produced. The material of the first protective member and the second protective member can be appropriately selected in accordance with the material of the target member or the back plate in the relevant split sputtering target. The strip widths of the first protective member and the second protective member may be equal or different. Further, the protective body of the laminated structure is disposed such that the first protective member is on the side of the target member and the second protective member is on the side of the backing plate along the gap formed between the joined target members. In the case where the protective body of the present invention is provided by a belt-shaped protective member, the first protective member having a narrow width and the second protective member having a wide width can be formed to expose the second protection on both end sides of the first protective member. The structure of the component. In this configuration, the two-layer structure of the first protective member having a narrow width is formed on the wide second protective member. Although the bonding of the dry member and the back sheet is performed by a low melting point solder such as In or Sn, it is expected that the protective member is alloyed by reacting with the low melting point solder by heat treatment at the time of bonding. In order to repeatedly use the low-melting solder of this joint, when the frequency of use becomes high, the composition of the low-melting-point solder is changed by the combination with the protective member, and the composition of the (four) piece and the backing plate is insufficiently paid. It is considered that the joint strength or the joint area has two or four materials selected as the second fault-protecting material: the first part of the material is easily reacted with the low-melting solder. Her cattle can suppress the i-th protective member and low melting point: it can prevent the composition change of the low melting point solder. Contact, this is a fortune, and the layered protective member is provided to protect the thickness of the protective member. The face is beautiful. Preferably, the total thickness of the protective member is 〇.3...^ = the third protective member of the same width and the second protective member. 7 = The window width is preferably 5 to 30 mm. When the second protective member of the second wide-width duck is laminated, the second protective member member is the same as the gap formed by = or larger than this; when it is equal, it is preferably 5 mm to 20 mm. The second wide second of the wide width is preferably 3 mm to 1 mm wider than the width of the first protective member. Width The protective body in the present invention may be a second protective structure which is arranged in parallel on both end sides of the second member-protecting member. As described above, when the members are arranged side by side on the both sides of the i-th protective member, the same effect can be obtained as the protective layer and the protective body of the above-mentioned narrow and wide layers. Further, when both sides of the first protective member in the longitudinal direction of the strip-shaped first protective member are the protective body of the structure, the 帛i protective member and the second protective member 疋 0001 to L 〇 Mm is better. Further, the width of the third protective member: 323359 9 201237203 = 5 to 2 Gmm is preferable when the gap formed between the members is the same as the gap formed between the members, or when the width is larger than the width of the workpiece. The width 疋 of the second protective member is preferably 3 to 10 mm. Any protective member in which the protective body is formed into the above two-layer structure or three-column structure is formed of cu, M, Ti, Ni, Zn, Cr, Fe, and the second: genus or any alloy containing the same Metal knots, - metal parts, and those containing more than one type of element containing the reduced part are preferably formed by σ gold or shouting materials. In the present invention, when the dry member is composed of an oxide (tetra) body, it is preferable that the single metal or alloy formed by the element containing the element or the material I is the first protective member. The protective body in the present invention is formed into the above two-layer structure or a three-column structure. The first protective member is made of Ιη, Ζη, Αι ϋ, τί,
=Mg的任何-種以上的氧化物或是氣化物所成的陶究材 T形成為佳。只要是此等喊材料，由於與㈣件有相同 、成S #77之組成與乾構件相同，故即使於成膜之際 忍入膜中，對ΤΠ元件特性的影響也小。又，只要為Zr〇2、 Al2〇3等陶究材料’由於電阻高可以抑制在減鐘之際對分 d 4分的電漿進入’可以有效防止Zr或A1的滅鑛。作為 該陶兗材料者’例如可以列舉In203、Zn0、Ah03、Zr02、 y〇2、IZO、IGZO 等；或是 ZrN、TiN、A1N、GaN、ZnN、InN 等。又，此等陶瓷材料，由於报難加工作成如金屬般的箔， 故利用蒸鍍法、濺鍍法、電聚炼射法、塗布法等形成第i 保護構件，可以適用於本發明。 10 323359 201237203 本發明中乾構件為氧化物半導體的情形，該氧化物半 導體可使用由含有丨n 7 r^ 有in、Zn、Ga中任何一種以上的氧化物所 成者。具體上’可以列舉 IGZ0(In~Ga-Zn-0)、GZ0(Ga-Zn_0)、 ΙΖ0(In-Zn-〇)、ZnO。 物半導趙可為Γ物半導艘的情形，該氧化 用由 S 有 Sn、Ti、Ba、Ca、Zn、Mg、Ge、Υ、 La A1 Si、Ga中任何—種以 物 可以列舉Sn-Ba-〇、Sn 7 n 7 M … Sn~Zn'0、Sn-Ti-0、Sn-Ca-〇、Sn-Mg_〇、It is preferable to form a ceramic material of any of the above-mentioned oxides or vapors. As long as these shouting materials are the same as (4), the composition of S #77 is the same as that of the dry member, so that even if it is incorporated into the film at the time of film formation, the influence on the characteristics of the element is small. Further, as long as the ceramic material such as Zr 〇 2 and Al 2 〇 3 can suppress the plasma ingress of 1/4 of the minute when the clock is reduced, the Zr or A1 can be effectively prevented from being destroyed. Examples of the ceramic material include, for example, In203, Zn0, Ah03, Zr02, y〇2, IZO, IGZO, and the like; or ZrN, TiN, A1N, GaN, ZnN, InN, or the like. Further, since these ceramic materials are difficult to work and form a metal-like foil, the i-th protective member can be formed by a vapor deposition method, a sputtering method, an electropolymerization method, a coating method, or the like, and can be applied to the present invention. 10 323359 201237203 In the case where the dry member is an oxide semiconductor in the present invention, the oxide semiconductor can be made of an oxide containing at least one of in, Zn, and Ga of 丨n 7 r^. Specifically, IGZ0 (In~Ga-Zn-0), GZ0 (Ga-Zn_0), ΙΖ0 (In-Zn-〇), and ZnO can be cited. The material semi-guided Zhao can be a semi-guided ship of a scorpion. The oxidation can be exemplified by Sn having any of Sn, Ti, Ba, Ca, Zn, Mg, Ge, yttrium, La A1 Si, and Ga. -Ba-〇, Sn 7 n 7 M ... Sn~Zn'0, Sn-Ti-0, Sn-Ca-〇, Sn-Mg_〇,
Zn-Mg-0、Zn-Ge-0、Ζη_Γ。Λ 氧化物的Ge變更成Mg Y G、Zn_Sn-Ge_Q、或是，將此等 MU u ' M '以的氧化物， 化物半導體可=1=:為氧化物半導體的情形’該氧 之氧化物所成者。具體上有，，…的任何-㈣^ Cu『n〇2。 祖上可以列舉：CmO、CuA 1 〇2、CuGa〇2、 [發明效果] 依=本U，將複數個㈣件接合而得到的分割賤鑛 日由雜，可以有致地防止背板的結構材料混 膜的薄膜中。 Λ 【實施方式】 [實施發明之最佳形態] 以下，參考圖面說明有Μ本發明之實施形態。 本實施形態的板狀機鍍乾，如第i圖所示，係在Cu 製背板10上，配置複數個乾構件20並經接合者。在此等 之乾構件相互之間’形成Umm至1. Gmm的間隙30。 11 323359 201237203 如第2圖所示，在背板10之表面，在相當於靶構件 相互間形成的間隙位置，黏貼保護體50。保護體是使用低 熔點焊錫或導電性兩面膠帶，而可以黏貼在背板10表面。 6片靶構件使用In或Sn的低熔點焊錫，如第1圖所 示般配置並接合。此接合係藉由將背板與靶構件同時加熱 到預定溫度，在背板表面塗布熔融之低熔點焊錫（In或 Sn)，將靶構件配置在該低熔點焊錫上並冷卻到室溫之方式 進行。 第3圖表示使用單層的保護體之截面概略圖。單層的 保護體50，厚度是0. 0001mm至1. Omm，以Zn、Ti、Sn之 任一金屬箔、含有80質量％以上之Zn、Ti、Sn任何一種以 上之合金箔形成。在該單層的保護體50的兩端側，形成存 在In的低熔點焊錫60之狀態。 第4圖表示積層同寬度的帶狀保護構件之二層結構的 保護體之截面概略圖。二層結構之保護體50是由第1保護 構件51與第2保護構件52所構成。因此，該第1保護構 件51與第2保護構件52的寬度，考慮到作業性等而設定 為5mm至20丽。又，在該第1保護構件51及第2保護構 件52的兩端側，形成存在In的低熔點焊錫60之狀態。 第5圖表示積層不同寬度的保護構件之二層結構的保 護體截面概略圖。二層結構的保護體50是由第1保護構件 51與第2保護構件52所構成。因此，該第1保護構件51 的寬度，考慮到作業性等而設定為5mm至20mm，第2保護 構件52的寬度是設定為8mm至30mm，比起第1保護構件， 12 323359 201237203 第2保護構件之寬度較寬。因此，藉由在第2保護構件的 幾乎中央處配置第1保護構件51，形成在第1保護構件的 兩端側露出第2保護構件52之狀態。該露出部分之寬度， 在兩端側的各個單側是1. 5mm至5誠。又，在第1保護構 件51及第2保護構件52之兩端側’形成存有In的低熔點 焊錫60之狀態。 第4圖及第5圖所示之第2保護構件52，厚度是〇. i 至 〇. 7mm ’ 以（；11、八1、14、？^、211、（]1*、？6的任一金屬 名3有此等任何一種以上之合金箔所形成。第4圖及第 =所示之第1保護構件51，厚度是G.咖1 mm至〇. 3mm， 係藉由構綠構件2G的元素之—種所成單一金屬、含有在 乾構件所含70素之-種以上之合金、或是副3、ZnO、 _、Zr〇2、μ、IZ〇、IGZ〇的任何陶瓷材料所形成。 第4 ®及第5圖所示二層結構之保護體，例如，可以 藉由^漿炼射，將AhG3、ZrG2的喊吹付到q. _厚度之 ⑶泊上而製作。使用市㈣氣體電㈣射裝置，在厚度 〇 · 3咖之Cu箱表面上，以平均粒經2叫m的& &粉^作 為原料，可以形成0·0001_厚的Zr〇2陶究層。又，A· 之情形也可以同樣製作。 第6圖表示使用三列結構的保護體時之截面概略圖。 三列結構的保護體5〇，係由在第1保護構件51的長度方 向延伸的兩端邊之兩侧，與第2保護構件52並列配置^結 構所此時，第丨保護構件51的寬度，考慮到作業性等 而設定為5職至20mm，第2保護構件52的寬度為3咖至 323359 13 201237203 10 mm。如第6圖所示，形成在第1保護構件51的兩端配 置第2保護構件，在該第2保護構件52的一端側存在In 的低熔點焊錫60之狀態。又，第1保護構件及第2保護構 件的厚度是0. 0001 mm至1. Omni。 在第3圖至第6圖中，使用高電阻物質作為保護體的 情形，形成藉由高電阻物質形成第3圖的保護體50、第4 圖至第6圖中的第1保護構件51。總之，第3圖至第6圖 中，在靶構件、背板、低熔點焊錫、保護體（第1保護構件） 之中，保護體（第1保護構件）有最大體積電阻值之事變成 重點。使用如此高電阻物質的保護體之分割濺鍍靶，在直 流濺鍍法、高周波濺鍍法的任一方法中，皆可以發揮效果， 尤其在直流濺鍍法中為合適者。 實施例 以下說明具體之實施例。製成的分割濺鍍靶，係將無 氧銅製的背板（寬度30mm、縱630mm、橫710mm)，與6片 的IGZ0製祀構件（寬度6mm、縱210mm、橫355mm)接合而 製成。接合用的低熔點焊錫是使用In。又，靶構件間的間 隙是0. 5mm。 IGZ0製靶構件，係秤量In2〇3、Ga2〇3、ZnO的各原料粉 末以lmol : lmol : 2mol之比率，藉由球磨機研磨20小時 混合處理。然後，將稀釋成4質量°/◦之聚乙烯醇水溶液作為 黏著劑，以相對於粉總量為8質量％添加並混合後，在 500kgf/cm2之壓力下成型。隨後在大氣中經1450°C、8小 時燒成處理而得到板狀的燒結體。然後，將此燒結體藉由 14 323359 201237203 平面研削機將兩面研磨，製成厚度6mm、縱21〇mm、橫355咖 的IGZ0製乾構件。 作為單層的保護體者，係使用厚度0.3顏的Zn、Ti 之2種類金屬。作為積層不同寬度的保護構件之二層結 構的保護體者’係使用將厚度0.3mm、寬度20mm的Cu金 屬箱作為第2保護構件，厚度0· 1mm、寬度15mm的Zn箔 作為第1帶狀保護構件並經積層者。又，另一個的作為積 層不同寬度的保護構件之二層結構的保護體者，係使用在 厚度0. 3mm、寬度20mm的Cu金屬箔之第2帶狀保護構件 上’使用原子比為In : Ga : Zn=l : 1 : 1的合金乾，並藉 由濺鍍將0.0001mm厚度之IGZ膜（寬度15mm)當作第i保 護構件而形成者。再者，作為積層相同寬度之保護構件的 二層結構保護體者，係使用將厚度0 3mm、寬度2〇匪的Cu 金屬箔作為第2保護構件，將厚度100/zm的Zr〇2當作第i 保護構件，藉由濺鍍將第2保護構件的全寬覆蓋者。又， 也可以使用以Al2〇3取代Zr〇2而覆蓋者。 製作各分割濺鍍靶後，進行濺鍍評估試驗。此濺鍍評 估試驗，係使用濺鍍裝置（SMD —450B、Ulvac公司製）^在 無鹼玻璃基板（日本電氣硝子公司製）上形成厚度14以^的 IGZO薄膜。然後，對此成膜的基板，切取相當於分割濺鍍 靶的間隙部分之直接上部基板、以及間隙部分以外的某 板，對切出之基板，藉由原子吸光分析測定IGZ〇薄膜中 Cu之混入量來進行濺鍍評估。結果在表1中表示。又，對 在間隙部分未配置保§蔓體的分割丨賤嫂乾，也同樣進行鬼_ 323359 15 201237203 評估試驗作為比對。 表 1 保護體 Cu混入量（ppm) 間隙部分 間隙以外 Zn(單層） <2 <2 Ti(單層） <2 <2 Zn/Cu (寬狹幅二層結構） <2 <2 IGZ/Cu (寬狹幅二層結構） <2 <2 Zr〇2/Cu (同寬二層結構） <2 <2 AI2O3/C11 (同寬二層結構） <2 <2 無帶狀保護體 19 2至3 如表1所示，設置保護體的情形，對IGZ0薄膜之銅 的混入量未達2 ppm(原子吸光分析的檢出界限以下）。相 對於此，未設置保護體的情形，對IGZ0薄膜之銅的混入量 在間隙部分為19ppm。 [產業上之可能利用性] 本發明在使用分割濺鍍靶形成大面積的薄膜之際，可 以有效地防止雜質混入成膜之薄膜中。 【圖式簡單說明】 第1圖表示分割濺鍍靶概略斜視圖。 第2圖表示本實施形態的背板之概略平面圖。 第3圖表示配置單層的保護體之概略截面圖。 第4圖表示配置二層結構的保護體之概略截面圖。 16 323359 201237203 第5圖表示由不同寬度的保護構件配置二層結構的保 護體之概略截面圖。 第6圖表示配置三列結構的保護體之概略截面圖。 【主要元件符號說明】 10 背板 20 靶構件 30 間隙 50 保護體 51 第1保護構件 52 第2保護構件 60 低熔點焊錫 17 323359Zn-Mg-0, Zn-Ge-0, Ζη_Γ. The Ge of the Λ oxide is changed to Mg YG, Zn_Sn-Ge_Q, or the oxide of the MU u ' M ', and the compound semiconductor can be ===: the case of an oxide semiconductor Adult. Specifically, there is any - (four) ^ Cu "n〇2. The ancestors can be enumerated as follows: CmO, CuA 1 〇 2, CuGa 〇 2, [Effect of the invention] According to the present U, a plurality of (four) pieces are joined together to obtain a split ore, which can prevent the structural materials of the back sheet from being mixed. In the film of the film. [Embodiment] [Best Mode for Carrying Out the Invention] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The plate-shaped machine of the present embodiment is plated and dried, and as shown in Fig. i, a plurality of dry members 20 are placed on the Cu back plate 10 and joined. A gap 30 of Umm to 1. Gmm is formed between the dry members. 11 323359 201237203 As shown in Fig. 2, the protective body 50 is adhered to the surface of the backing plate 10 at a gap position corresponding to the target members. The protective body is made of a low melting point solder or a conductive double sided tape, and can be adhered to the surface of the back sheet 10. The six target members were placed and joined as shown in Fig. 1 using a low melting point solder of In or Sn. The bonding is performed by applying a molten low melting point solder (In or Sn) to the surface of the backing plate by heating the backing plate and the target member to a predetermined temperature, and arranging the target member on the low melting point solder and cooling to room temperature. get on. Fig. 3 is a schematic cross-sectional view showing a protective body using a single layer. The single-layered protective body 50 has a thickness of from 0.001 mm to 1.0 mm, and is formed of any one of Zn, Ti, and Sn, and an alloy foil containing at least 80% by mass of Zn, Ti, or Sn. On the both end sides of the single-layered protective body 50, a state in which the low-melting solder 60 of In is formed is formed. Fig. 4 is a schematic cross-sectional view showing a protective body of a two-layer structure in which a strip-shaped protective member having the same width is laminated. The protective body 50 of the two-layer structure is composed of the first protective member 51 and the second protective member 52. Therefore, the width of the first protective member 51 and the second protective member 52 is set to 5 mm to 20 Å in consideration of workability and the like. Further, on both end sides of the first protective member 51 and the second protective member 52, a state in which the low melting point solder 60 of In is present is formed. Fig. 5 is a schematic cross-sectional view showing a protective body of a two-layer structure in which protective members of different widths are laminated. The protective body 50 having a two-layer structure is composed of the first protective member 51 and the second protective member 52. Therefore, the width of the first protective member 51 is set to 5 mm to 20 mm in consideration of workability and the like, and the width of the second protective member 52 is set to 8 mm to 30 mm, which is the second protection compared to the first protective member, 12 323359 201237203 The width of the member is wide. Therefore, the first protective member 51 is disposed at almost the center of the second protective member, and the second protective member 52 is exposed on both end sides of the first protective member. 5毫米至五诚。 The width of the exposed portion, on each side of the two sides is 1. 5mm to 5 honest. Further, the low-melting-point solder 60 in which In is present is formed on both end sides of the first protective member 51 and the second protective member 52. The second protective member 52 shown in Figs. 4 and 5 has a thickness of 〇. i to 〇. 7mm ' by (11, VIII, 14, ?, 211, (1), ??? A metal name 3 is formed by any one or more of the alloy foils. The first protective member 51 shown in Fig. 4 and the third embodiment has a thickness of G. coffee 1 mm to 〇. 3 mm, by a green member 2G. The element is a single metal, an alloy containing more than 70 species of the dry component, or any ceramic material of the sub 3, ZnO, _, Zr 〇 2, μ, IZ 〇, IGZ 〇 The protective body of the two-layer structure shown in Fig. 4 and Fig. 5 can be produced by, for example, smelting AhG3 and ZrG2 to the (3) poise of q. _ thickness. The gas electric (four) injection device can form a Z. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Further, the case of A· can be similarly produced. Fig. 6 is a schematic cross-sectional view showing a protective body of a three-column structure. The protective body 5〇 of the three-row structure extends in the longitudinal direction of the first protective member 51. In this case, the width of the second protective member 51 is set to 5 to 20 mm in consideration of workability and the like, and the width of the second protective member 52 is set. 3 to 323359 13 201237203 10 mm. As shown in Fig. 6, a second protective member is disposed at both ends of the first protective member 51, and a low melting solder 60 having In on one end side of the second protective member 52 is formed. Further, the thickness of the first protective member and the second protective member is from 0.0001 mm to 1. Omni. In the third to sixth figures, the case where a high-resistance substance is used as a protective body is formed by high The resistive substance forms the protective body 50 of Fig. 3 and the first protective member 51 of Figs. 4 to 6 . In summary, in Fig. 3 to Fig. 6, the target member, the back sheet, the low melting point solder, and the protective body Among the (first protective members), the protective body (first protective member) has a maximum volume resistance value. The split sputtering target using a protective body of such a high-resistance material is subjected to direct current sputtering and high-frequency sputtering. In any method of the method, the effect can be exerted, especially in the DC sputtering method. EXAMPLES Hereinafter, specific examples will be described. The produced split sputtering target is an oxygen-free copper back sheet (width 30 mm, vertical 630 mm, width 710 mm), and 6 pieces of IGZ0 祀 members (width) 5mm. The gap between the target members is 0. 5mm. The target member of the IGZ0 is weighed in2〇3, Ga2〇3, and is made of a joint of 6mm, a length of 210mm, and a width of 355mm. Each raw material powder of ZnO was mixed and treated by a ball mill for 20 hours at a ratio of 1 mol : 1 mol : 2 mol. Then, an aqueous solution of polyvinyl alcohol diluted to 4 mass%/◦ was used as an adhesive, and after being added and mixed with 8 mass% of the total amount of the powder, it was molded under a pressure of 500 kgf/cm2. Subsequently, it was subjected to a firing treatment at 1450 ° C for 8 hours in the atmosphere to obtain a plate-shaped sintered body. Then, the sintered body was ground on both sides by a 14 323359 201237203 plane grinding machine to prepare an IGZ0 dry member having a thickness of 6 mm, a length of 21 mm, and a horizontal 355 coffee. As a single-layer protective body, two kinds of metals of Zn and Ti having a thickness of 0.3 are used. As a protective body of a two-layer structure in which protective members of different widths are laminated, a Cu metal case having a thickness of 0.3 mm and a width of 20 mm is used as the second protective member, and a Zn foil having a thickness of 0·1 mm and a width of 15 mm is used as the first band. The protective member is passed through the laminate. Further, the other protective body of the two-layer structure which is a protective member of a different width is used on the second strip-shaped protective member of a Cu metal foil having a thickness of 0.3 mm and a width of 20 mm, using an atomic ratio of In: Ga: Zn=l: The alloy of 1 : 1 was dried, and an IGZ film (width: 15 mm) having a thickness of 0.0001 mm was formed by sputtering as the i-th protective member. Further, as a two-layer structure protector in which a protective member having the same width is laminated, a Cu metal foil having a thickness of 0 mm and a width of 2 Å is used as the second protective member, and Zr 〇 2 having a thickness of 100/zm is used as the second protective member. The i-th protective member covers the entire width of the second protective member by sputtering. Further, it is also possible to use Z2〇3 instead of Al2〇3 to cover it. After each split sputtering target was produced, a sputtering evaluation test was performed. In the sputtering evaluation test, an IGZO film having a thickness of 14 Å was formed on an alkali-free glass substrate (manufactured by Nippon Electric Glass Co., Ltd.) using a sputtering apparatus (SMD-450B, manufactured by Ulvac Co., Ltd.). Then, on the substrate to be formed, a direct upper substrate corresponding to the gap portion of the divided sputtering target and a plate other than the gap portion are cut out, and the cut substrate is subjected to atomic absorption analysis to measure Cu in the IGZ germanium film. The amount of mixing is used for the sputtering evaluation. The results are shown in Table 1. In addition, the split test is not performed on the gap portion, and the evaluation test of Ghost _ 323359 15 201237203 is also performed as the comparison. Table 1 Cu content of the protective body (ppm) Zn (single layer) other than the gap part of the gap < 2 < 2 Ti (single layer) < 2 < 2 Zn / Cu (width narrow two-layer structure) <2 <2 IGZ/Cu (width narrow two-layer structure) <2 <2 Zr〇2/Cu (coplanar two-layer structure) <2 <2 AI2O3/C11 (coaxial width two-layer structure) < 2 <2 Bandless Protective Body 19 2 to 3 As shown in Table 1, when the protective body is provided, the amount of copper incorporated into the IGZ0 film is less than 2 ppm (below the detection limit of the atomic absorption analysis). In contrast, in the case where the protective body was not provided, the amount of copper mixed into the IGZ0 film was 19 ppm in the gap portion. [Industrial Applicability] The present invention can effectively prevent impurities from being mixed into the film to be formed when a large-area film is formed by using the split sputtering target. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic perspective view showing a split sputtering target. Fig. 2 is a schematic plan view showing a backing plate of the embodiment. Fig. 3 is a schematic cross-sectional view showing a protective body in which a single layer is disposed. Fig. 4 is a schematic cross-sectional view showing a protective body in which a two-layer structure is arranged. 16 323359 201237203 Fig. 5 is a schematic cross-sectional view showing a protective body in which a two-layer structure is disposed by protective members of different widths. Fig. 6 is a schematic cross-sectional view showing a protective body in which three columns of structures are arranged. [Main component symbol description] 10 Back plate 20 Target member 30 Clearance 50 Protective body 51 First protective member 52 Second protective member 60 Low melting point solder 17 323359