CN2280717Y - Flat magnetic-control sputter target board of transparent conductive film - Google Patents
Flat magnetic-control sputter target board of transparent conductive film Download PDFInfo
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- CN2280717Y CN2280717Y CN 96220998 CN96220998U CN2280717Y CN 2280717 Y CN2280717 Y CN 2280717Y CN 96220998 CN96220998 CN 96220998 CN 96220998 U CN96220998 U CN 96220998U CN 2280717 Y CN2280717 Y CN 2280717Y
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Abstract
The utility model discloses a flat magnetic-control sputter target board of a transparent conductive film, which is especially suitable for sputtering and plating tin indium oxide transparent conductive film. An ITO ceramic layer 1 is formed by the connection of ITO ceramic blocks and a metal backing board 3 through a link layer 2, which has an insulating high temperature resistant layer 7 in the gap of a joint surface. The link layer 2 is composed of a transition layer 4, a protective layer 5 and a welding layer 6, wherein the transition layer 4 is formed by the insulating high temperature resistant layer 7 and a tin indium alloy layer 8, which is arranged on the joint surface. The utility model used for the production of conducting film with the advantages of reliable performance and long service life is provided.
Description
The utility model discloses a kind of nesa coating plane magnetic controlled sputtering target plate, be particularly suitable for sputter plating indium tin oxide transparent conducting film.
Tin indium oxide (hereinafter to be referred as ITO) film is widely used in photoelectric devices such as liquid-crystal display, transparency electrode because of having good printing opacity and electroconductibility concurrently in the prior art.Because, the good characteristic of the film of Sheng Chenging under certain condition, the target that is used for sputter plating ITO conducting film adopts the ITO stupalith substantially.In the practical application, the ITO ceramic block is connected formation plane magnetic controlled sputtering target plate on the metal backing.Above-mentioned target plate member need consider to have good conduction, thermal conductivity: particular-trades such as the hot expansibility of articulamentum and metal backing and ITO pottery coupling.Generally make backboard with copper or Cu alloy material, indium stannum alloy connects material, the ITO ceramic plate that sinters is assembled into desired size is connected on the backboard, is combined into ITO plane magnetic controlled sputtering target plate.According to its physics-chem characteristic, the surface energy of liquid indium stannum alloy is big more than the surface energy of ITO pottery, thereby liquid indium stannum alloy can't be directly wetting or sprawl the ceramic surface in ITO.Need to improve the wetting property of indium stannum alloy to the ITO ceramic surface through special processing.In addition, slit between the ITO ceramic block can produce following adverse consequences: one, the sputter of connection material that is positioned at the slit below on the sputter runway is often faster than the ITO stupalith, cause the articulamentum at this place breakdown, thereby influenced the work-ing life and the sputtering technology of monoblock target prior to the ITO ceramic layer; Two, expand the unbalanced stress that causes the ITO ceramic block because of the excessive sputter of the connection material below the slit to the both sides, slit and spare, cause that the ITO pottery splits and even comes off; Three, the below, slit connects the excessive sputter of material also introduces impurity in the sputtered film easily, influences the structure and the photoelectric properties thereof of ito thin film.
The purpose of this utility model is by the reasonable disposition of articulamentum material and structure and processing, satisfying under ITO sputtering target plate conduction, the heat conductivility prerequisite, overcome because of influences such as the slit that stays between the ITO ceramic block easily puncture, thereby obtained performance is reliable, be used for the ITO plane magnetic controlled sputtering target plate that the ITO conducting film is produced work-ing life longways.
The utility model is finished by the following technical programs.
The technical characterstic of the nesa coating plane magnetic controlled sputtering target plate of being made up of ceramic layer, articulamentum and metal backing is to be connected with metal backing 3 by articulamentum 2 by the ITO ceramic block, form ITO ceramic layer 1, an insulation high-temperature-resistant layer 7 is arranged at the place, slit, junction surface of ITO ceramic layer 1; Described articulamentum 2 is made up of transition layer 4, protective layer 5 and weld layer 6, and transition layer 4 is made up of insulation high-temperature-resistant layer 7 and 8 on indium stannum alloy layer and is positioned on ITO ceramic layer 1 junction surface.ITO ceramic layer 1 is by the assembled planar rectangular ITO sputtering target material of desired size by the ITO ceramic plate that has sintered; At the slit, junction surface of ITO ceramic layer 1 place's album leave and narrow non-conductive high temperature resistant adhesive tape 7, the slit is isolated with the insulated with material that is connected of its below, the rest part on ITO ceramic layer 1 junction surface applies a thin indium stannum alloy layer 8, constitutes transition layer 4 on ITO ceramic layer 1 junction surface by high-temperature insulation band 7 and indium stannum alloy layer 8; In abutting connection with transition layer 4 are protective layers 5.Protective layer 5 has influence on the bonding force between indium stannum alloy layer 8 and the ITO ceramic layer 1 for the exposure that prevents indium stannum alloy layer 8 produces the oxide film that surpasses thickness.
The positively effect that the utility model produced mainly shows: improved the wetting property of indium stannum alloy to the ITO ceramic surface.Making the ITO ceramic layer abandon the protective layer and the weld layer of dress slit below can be not breakdown, thereby has improved the work-ing life of target and the photoelectric properties of ITO conducting film, has greatly reduced production cost.
Further specify technology contents of the present utility model below in conjunction with accompanying drawing.
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is the transition layer A-A diagrammatic cross-section of Fig. 1.
Fig. 3 is an enforcement illustration of the present utility model.
See among Fig. 1 that the utility model ITO plane magnetic controlled sputtering target plate is made pottery by sputtering target material ITO Enamel coating 1, articulamentum 2 and copper backboard 3 form, and wherein articulamentum 2 is by transition zone 4, protection Layer 5 and weld layer 6 form. See among Fig. 2 place, slit, the composition surface album leave of ITO ceramic layer 1 And narrow non-conductive high temperature resistant adhesive tape 7, with the connecting material insulation isolation of slit and its below, This can overcome the slit that stays after the assembly unit of ITO ceramic block and the adverse effect that produces effectively, The remainder on ITO ceramic layer 1 composition surface then adopts the mechanical friction method to apply skim The indium stannum alloy layer 8 that consists of.
Below exemplify the utility model most preferred embodiment.
See that Fig. 3 is an instance constructs explanatory view of the ITO plane magnetic controlled sputtering target device of the utility model and the supporting formation of respective accessory.In this example, the ceramic layer part 1 of target plate member is assembled by the ITO ceramic plate of eight fritter equidimensions, is shaped as planar rectangular, and backboard 3 is copper rectangular flats, and articulamentum 2 is by transition layer 4, and protective layer 5 and weld layer 6 are composited.The target plate member is assemblied on the target stand 10, and the magnetic line of force that produces by permanent magnet 11 forms a runway magnetic field on ITO ceramic layer 1 surface; During sputter by this runway magnetic field plasma containment on the target plate surface, the ion in the plasma body is subjected to the DC electric field of vertical target surface to quicken the back to collide to target plate, produce splash effect.The 12nd, magnet backboard, the 13rd, set screw, the 14th, warter connection, the 15th, cooling trough, the 16th, vacuum chamber body, the 17th, door for vacuum chamber, the 18th, dead ring.
Claims (4)
1. nesa coating plane magnetic controlled sputtering target plate; formed by ceramic layer, articulamentum and metal backing; it is characterized in that: described ceramic layer is to be connected with metal backing (3) by articulamentum (2) by the ITO ceramic block; and form ITO ceramic layer (1), at the place, slit, junction surface of ITO ceramic layer (1) an insulation high-temperature-resistant layer (7) is arranged: described articulamentum (2) is made up of transition layer (4), protective layer (5) and weld layer (6). and by the transition layer (4) on insulation high-temperature-resistant layer (7) and indium stannum alloy layer (8) formation ITO ceramic layer (1) junction surface.
2. a kind of nesa coating plane magnetic controlled sputtering target plate according to claim 1 is characterized in that: the edge of described weld layer (6) and copper backboard (3) marginal surface have certain distance, weld layer (6) and protective layer (5) adjacency.
3. a kind of nesa coating plane magnetic controlled sputtering target plate according to claim 1 is characterized in that: described ITO ceramic layer (1) is by the assembled planar rectangular ITO sputtering target material of desired size by the ITO ceramic plate that has sintered.
4. a kind of nesa coating plane magnetic controlled sputtering target plate according to claim 1 is characterized in that: what pasted at described place, slit, junction surface at ITO ceramic layer (1) is insulation high temperature resistant adhesive tape (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96220998 CN2280717Y (en) | 1996-08-27 | 1996-08-27 | Flat magnetic-control sputter target board of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96220998 CN2280717Y (en) | 1996-08-27 | 1996-08-27 | Flat magnetic-control sputter target board of transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2280717Y true CN2280717Y (en) | 1998-05-06 |
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ID=33901076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96220998 Expired - Fee Related CN2280717Y (en) | 1996-08-27 | 1996-08-27 | Flat magnetic-control sputter target board of transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2280717Y (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297684C (en) * | 2001-10-12 | 2007-01-31 | 东曹株式会社 | Sputtering target |
| CN1930318B (en) * | 2004-03-31 | 2010-09-01 | 出光兴产株式会社 | Indium oxide-cerium oxide sputtering target, transparent conductive film, and method for producing transparent conductive film |
| CN102418079A (en) * | 2011-12-16 | 2012-04-18 | 深圳市创益科技发展有限公司 | Modified magnetron sputtering target part and method thereof |
| CN101733495B (en) * | 2009-11-11 | 2012-09-19 | 宁波江丰电子材料有限公司 | Spliced target forming method |
| CN102712997A (en) * | 2010-11-08 | 2012-10-03 | 三井金属矿业株式会社 | Divided sputtering target and method for producing same |
| CN103726025A (en) * | 2014-01-02 | 2014-04-16 | 昆山全亚冠环保科技有限公司 | Target assembly and preparation method thereof |
| CN104532198A (en) * | 2014-12-16 | 2015-04-22 | 张家港市铭斯特光电科技有限公司 | Cathode for magnetron sputtering coating |
| CN104532199A (en) * | 2014-12-16 | 2015-04-22 | 张家港市铭斯特光电科技有限公司 | Cathode for medium-frequency magnetron sputtering coating |
| CN105779957A (en) * | 2016-03-22 | 2016-07-20 | 广西晶联光电材料有限责任公司 | Method for metalizing back face of ITO target material |
| CN105849633A (en) * | 2013-12-20 | 2016-08-10 | 攀时奥地利公司 | W-Ni sputter target |
| CN106683988A (en) * | 2016-12-28 | 2017-05-17 | 惠科股份有限公司 | Target device |
| CN114751444A (en) * | 2022-04-22 | 2022-07-15 | 齐鲁工业大学 | Porous indium oxide nanotube and synthesis method and application thereof |
-
1996
- 1996-08-27 CN CN 96220998 patent/CN2280717Y/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297684C (en) * | 2001-10-12 | 2007-01-31 | 东曹株式会社 | Sputtering target |
| CN1930318B (en) * | 2004-03-31 | 2010-09-01 | 出光兴产株式会社 | Indium oxide-cerium oxide sputtering target, transparent conductive film, and method for producing transparent conductive film |
| CN101733495B (en) * | 2009-11-11 | 2012-09-19 | 宁波江丰电子材料有限公司 | Spliced target forming method |
| CN102712997A (en) * | 2010-11-08 | 2012-10-03 | 三井金属矿业株式会社 | Divided sputtering target and method for producing same |
| CN102712997B (en) * | 2010-11-08 | 2014-03-19 | 三井金属矿业株式会社 | Divided sputtering target and method for producing same |
| CN102418079A (en) * | 2011-12-16 | 2012-04-18 | 深圳市创益科技发展有限公司 | Modified magnetron sputtering target part and method thereof |
| CN105849633A (en) * | 2013-12-20 | 2016-08-10 | 攀时奥地利公司 | W-Ni sputter target |
| CN103726025A (en) * | 2014-01-02 | 2014-04-16 | 昆山全亚冠环保科技有限公司 | Target assembly and preparation method thereof |
| CN103726025B (en) * | 2014-01-02 | 2016-10-05 | 昆山全亚冠环保科技有限公司 | A kind of target material assembly and preparation method thereof |
| CN104532199A (en) * | 2014-12-16 | 2015-04-22 | 张家港市铭斯特光电科技有限公司 | Cathode for medium-frequency magnetron sputtering coating |
| CN104532198A (en) * | 2014-12-16 | 2015-04-22 | 张家港市铭斯特光电科技有限公司 | Cathode for magnetron sputtering coating |
| CN105779957A (en) * | 2016-03-22 | 2016-07-20 | 广西晶联光电材料有限责任公司 | Method for metalizing back face of ITO target material |
| CN106683988A (en) * | 2016-12-28 | 2017-05-17 | 惠科股份有限公司 | Target device |
| CN106683988B (en) * | 2016-12-28 | 2019-05-24 | 惠科股份有限公司 | Target device |
| CN114751444A (en) * | 2022-04-22 | 2022-07-15 | 齐鲁工业大学 | Porous indium oxide nanotube and synthesis method and application thereof |
| CN114751444B (en) * | 2022-04-22 | 2023-09-19 | 齐鲁工业大学 | Porous indium oxide nanotube and synthesis method and application thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |