CN105779957A - Method for metalizing back face of ITO target material - Google Patents
Method for metalizing back face of ITO target material Download PDFInfo
- Publication number
- CN105779957A CN105779957A CN201610165106.6A CN201610165106A CN105779957A CN 105779957 A CN105779957 A CN 105779957A CN 201610165106 A CN201610165106 A CN 201610165106A CN 105779957 A CN105779957 A CN 105779957A
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- target
- indium
- metalization
- target material
- face
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a method for metalizing a back face of an ITO target material. According to the method, the target material is cleaned, the part which does not need to be metalized is covered with a heat-resisting thin film, and put on a normal-temperature heating table, the face required to be metalized is upward, the temperature of the heating table rises to 200 DEG C to 230 DEG C, the temperature of the face, required to be metalized, of the target material ranges from 170 DEG C to 180 DEG C, an indium material is placed on the to-be-metalized face of the target material, and after the indium material is melted, the to-be-metalized face is evenly painted through a copper brush, and an ultrasonic indium coating machine is used for carrying out uniform coating for 2 times to 4 times; redundant indium materials are scraped by a scraping plate to be removed; temperature is naturally reduced, the target material is taken out of the heating table, the thin film is removed, and target material metalizing is completed; and according to the method, the simple heating table is adopted to be matched with the ultrasonic indium coating machine to achieve operation, back face metallization of the ITO target material can be simply and efficiently completed, and the method has the beneficial effects that expensive equipment is not needed, operation is simple, efficient and free of pollution, large-area metalizing can be carried out, the cost is low, and the method is suitable for large-batch production.
Description
Technical field
The present invention relates to the back face metalization method of a kind of tin indium oxide for magnetron sputtering plating (ITO) target.
Background technology
ITO target is the raw material that magnetron sputtering is coated with transparent conductive film.Ito film, as the nesa coating of a kind of excellent performance, is widely used in the industries such as flat faced display, touch screen, solaode, LED.ITO target, when installing and using, welds together with one piece of backboard (usually copper coin), and this process is in industry called laminating.For avoiding the introducing impurity when plated film, the solder commonly used at present is indium metal.Meanwhile, in order to this ceramic material of ITO target firmly can be welded together with metal backing, it will usually plating layer of metal indium at the back side of ITO target, this process in industry makes target metallize.
The metallization of ITO target has the methods such as ionic depositing method disclosed in conventional gas phase evaporation, magnetron sputtering method, Chinese patent CN103031524A, and these methods need expensive filming equipment, and can metallized area by the restriction of equipment size.Chinese patent CN101705501A discloses a kind of method of electrolysis ITO target back face metalization, and electrolytic method not only produces a large amount of pollution, and metal layer exists empty unsound phenomenon, affects soldering effect below.
Summary of the invention
The technical problem to be solved in the present invention is: provides a kind of and utilizes warm table to coordinate the back face metalization method of ITO target that ultrasound wave is coated with indium machine, the method without expensive device, efficient pollution-free simple to operate, large area ITO target back face metalization can be carried out.
The technical scheme solving above-mentioned technical problem is: a kind of back face metalization method of ITO target, comprises the following steps:
(1) ITO target deionized water to metalization is cleaned and dried；
(2) do not need metallized surface heat-pesistant thin film to cover step (1) target；
(3) step (2) target is placed on the warm table of room temperature, needs metallized one to face up；
(4) then with the programming rate being not more than 5 degrees/min, warm table being warming up to 200～230 degree, and constant temperature is at 200～230 degree, the surface temperature making target to metalization reaches 170～180 degree；
(5) workbench constant temperature is at 200～230 degree, indium metal is placed on the one side that target is to metalization, after its fusing, equably indium metal is filled with copper brush the one side that target is to metalization, be then coated with the indium machine indium layer to target metallization face is completely covered with ultrasound wave and again smear 2～4 times；
(6) with scraper plate, the unnecessary indium material not adhered to is scraped totally；
(7) by warm table power-off, it is naturally cooling to room temperature, metallized target will be completed and take off warm table, and then remove the thin film of cladding, namely complete target metallization.
The further technical scheme of the present invention is: step (2) described in heat-pesistant thin film be that aluminum is thin, stannum is thin or resistant to the high temperature gummed tape of more than 230 degree.
The purity of step (5) middle indium metal is more than 99.9%.
Step (5) in place in target one side to metalization indium metal make consumption, by 1m2The area that target is to metalization uses 80～250g indium metal to calculate.
The present invention adopts simple warm table to coordinate ultrasound wave painting indium machine to carry out, can simply and efficiently complete ITO target back face metalization, ultrasound wave is coated with compared with the filming equipment (such as multi-Arc Ion Plating) that indium machine needs with prior art to use, and price wants considerably cheaper.Therefore advantages of the present invention is: without expensive device, efficient pollution-free simple to operate, can carrying out large-area ITO target back face metalization, cost is low, it is suitable for producing in enormous quantities.
Detailed description of the invention
Embodiment 1:
One piece is of a size of the ITO target (needing metallized backside area is 190mm × 650mm) of 190mm × 650mm × 6mm, cleans up with deionized water and dry.By other 5 the thin claddings of face aluminum except need to metallizing, and cement with the high temperature gummed tape resistant to 230 degree of high temperature, it is ensured that do not polluted by indium material.Then target is lain on the warm table of room temperature, it is necessary to metallized one faces up, and begins to warm up, heat with the heating rates of 3 degrees/min and make warm table to 200 degree, and be maintained at this temperature.With infrared thermometry device measure target need metallized surface temperature to be 175 degree time, 10g indium material is placed on target and need to metallize face, after it is completely melt, with copper brush by uniform for liquid indium brushing so that it is the one side that need to be metallized by target is completely covered.Then it is coated with indium machine with ultrasound wave and the indium layer that completely covers metallization face is smeared uniformly again, after smearing 3 times with ultrasound wave painting indium machine, with rustless steel scraper plate, unnecessary indium material is blown off.Close warm table power supply so that it is natural cooling.After target and warm table are cooled to room temperature, high temperature gummed tape and aluminum that target is taken off and removed cladding are thin, and target has metallized.After having metallized, form one layer of metal indium layer being approximately in 10 microns at the target back side, through it was verified that be fully able to the requirement meeting next step soldering.
Embodiment 2:
One piece is of a size of the ITO target (needing metallized backside area is 100mm × 200mm) of 100mm × 200mm × 6mm, spends Ion Cleaning and totally and dry.Other 5 faces except need to metallizing all are clung resistant to the high temperature gummed tape of 230 degree of high temperature, it is ensured that do not polluted by indium material.Then target is lain on the warm table of room temperature, it is necessary to metallized one faces up, and begins to warm up, be heated to 230 degree with the heating rate of 5 degrees/min, and be maintained at this temperature.Measuring target with infrared thermometry device needs metallized surface temperature to be 180 degree.5g indium material is placed on face of need to metallizing, after it is completely melt, with copper brush by uniform for liquid indium brushing so that it is the one side that need to metallize is completely covered.Then it is coated with indium machine with ultrasound wave the indium layer that completely covers metallization face is smeared again, after smearing 2 times with ultrasound wave painting indium machine, with rustless steel scraper plate, unnecessary indium material is blown off.Close warm table power supply so that it is natural cooling.After target and warm table are cooled to room temperature, target being taken off and removed the high temperature gummed tape of cladding, target has metallized.After having metallized, form one layer of metal indium layer being approximately in 10 microns at the target back side, through it was verified that be fully able to the requirement meeting next step soldering.
In various embodiments of the present invention, do not need other 5 not contaminated materials in face of metallized target for protection, except adopting the high temperature gummed tape resistant to 230 degree of high temperature, it is also possible to adopt the heat-pesistant thin films such as aluminum is thin, stannum is thin.
In various embodiments of the present invention, the purity of the indium metal of use is more than 99.9%.
As a kind of conversion of the present embodiment, the consumption that makes of the indium metal placed in the one side that target is to metalization can also be determined according to practical situation, generally presses 1m2The area that target is to metalization uses 80～250g indium metal to calculate.
Claims (4)
1. the back face metalization method of an ITO target, it is characterised in that: comprise the following steps:
(1) ITO target deionized water to metalization is cleaned and dried；
(2) do not need metallized surface heat-pesistant thin film to cover step (1) target；
(3) step (2) target is placed on the warm table of room temperature, needs metallized one to face up；
(4) then with the programming rate being not more than 5 degrees/min, warm table being warming up to 200～230 degree, and constant temperature is at 200～230 degree, the surface temperature making target to metalization reaches 170～180 degree；
(5) workbench constant temperature is at 200～230 degree, indium metal is placed on the one side that target is to metalization, after its fusing, equably indium metal is filled with copper brush the one side that target is to metalization, be then coated with the indium machine indium layer to target metallization face is completely covered with ultrasound wave and again smear 2～4 times；
(6) with scraper plate, the unnecessary indium material not adhered to is scraped totally；
(7) by warm table power-off, it is naturally cooling to room temperature, metallized target will be completed and take off warm table, and then remove the thin film of cladding, namely complete target metallization.
2. the back face metalization method of a kind of ITO target according to claim 1, it is characterised in that: step (2) described in heat-pesistant thin film be that aluminum is thin, stannum is thin or resistant to the high temperature gummed tape of more than 230 degree.
3. the back face metalization method of a kind of ITO target according to claim 1 and 2, it is characterised in that: the purity of step (5) middle indium metal is more than 99.9%.
4. the back face metalization method of a kind of ITO target according to claim 1 and 2, it is characterised in that: step (5) in place in target one side to metalization indium metal make consumption, by 1m2The area that target is to metalization uses 80～250g indium metal to calculate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610165106.6A CN105779957B (en) | 2016-03-22 | 2016-03-22 | A kind of back metal method of ITO target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610165106.6A CN105779957B (en) | 2016-03-22 | 2016-03-22 | A kind of back metal method of ITO target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105779957A true CN105779957A (en) | 2016-07-20 |
| CN105779957B CN105779957B (en) | 2018-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610165106.6A Active CN105779957B (en) | 2016-03-22 | 2016-03-22 | A kind of back metal method of ITO target |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108655525A (en) * | 2018-05-17 | 2018-10-16 | 洛阳丰联科绑定技术有限公司 | A kind of binding method of target |
| CN109136868A (en) * | 2018-09-13 | 2019-01-04 | 先导薄膜材料（广东）有限公司 | The binding method of ITO target or other ceramic targets |
| CN110948071A (en) * | 2019-11-22 | 2020-04-03 | 福建阿石创新材料股份有限公司 | Soldering method of splicing-free rotary target |
| CN111304605A (en) * | 2020-03-09 | 2020-06-19 | 东莞市欧莱溅射靶材有限公司 | ITO (indium tin oxide) rotary target binding method |
Citations (7)
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|---|---|---|---|---|
| CN2280717Y (en) * | 1996-08-27 | 1998-05-06 | 深圳市创益科技发展有限公司 | Flat magnetic-control sputter target board of transparent conductive film |
| CN101648308A (en) * | 2009-05-08 | 2010-02-17 | 宁波江丰电子材料有限公司 | Manufacturing method of target material assembly |
| CN202725429U (en) * | 2012-05-04 | 2013-02-13 | 梁国雄 | Ultrasonic indium coating machine |
| CN103567583A (en) * | 2012-07-30 | 2014-02-12 | 宁波江丰电子材料有限公司 | Method for welding aluminum target assemblies |
| CN103692041A (en) * | 2012-09-28 | 2014-04-02 | 宁波江丰电子材料有限公司 | Brazing method for silicon target component |
| CN103737140A (en) * | 2013-12-30 | 2014-04-23 | 江西沃格光电股份有限公司 | Method for binding ITO target to copper back plate |
| CN204893137U (en) * | 2015-07-20 | 2015-12-23 | 厦门映日新材料科技有限公司 | Target is bound ultrasonic wave and is scribbled indium probe |
-
2016
- 2016-03-22 CN CN201610165106.6A patent/CN105779957B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2280717Y (en) * | 1996-08-27 | 1998-05-06 | 深圳市创益科技发展有限公司 | Flat magnetic-control sputter target board of transparent conductive film |
| CN101648308A (en) * | 2009-05-08 | 2010-02-17 | 宁波江丰电子材料有限公司 | Manufacturing method of target material assembly |
| CN202725429U (en) * | 2012-05-04 | 2013-02-13 | 梁国雄 | Ultrasonic indium coating machine |
| CN103567583A (en) * | 2012-07-30 | 2014-02-12 | 宁波江丰电子材料有限公司 | Method for welding aluminum target assemblies |
| CN103692041A (en) * | 2012-09-28 | 2014-04-02 | 宁波江丰电子材料有限公司 | Brazing method for silicon target component |
| CN103737140A (en) * | 2013-12-30 | 2014-04-23 | 江西沃格光电股份有限公司 | Method for binding ITO target to copper back plate |
| CN204893137U (en) * | 2015-07-20 | 2015-12-23 | 厦门映日新材料科技有限公司 | Target is bound ultrasonic wave and is scribbled indium probe |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108655525A (en) * | 2018-05-17 | 2018-10-16 | 洛阳丰联科绑定技术有限公司 | A kind of binding method of target |
| CN109136868A (en) * | 2018-09-13 | 2019-01-04 | 先导薄膜材料（广东）有限公司 | The binding method of ITO target or other ceramic targets |
| CN110948071A (en) * | 2019-11-22 | 2020-04-03 | 福建阿石创新材料股份有限公司 | Soldering method of splicing-free rotary target |
| CN111304605A (en) * | 2020-03-09 | 2020-06-19 | 东莞市欧莱溅射靶材有限公司 | ITO (indium tin oxide) rotary target binding method |
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| Publication number | Publication date |
|---|---|
| CN105779957B (en) | 2018-12-28 |
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