CN103692041A - Brazing method for silicon target component - Google Patents
Brazing method for silicon target component Download PDFInfo
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- CN103692041A CN103692041A CN201210367293.8A CN201210367293A CN103692041A CN 103692041 A CN103692041 A CN 103692041A CN 201210367293 A CN201210367293 A CN 201210367293A CN 103692041 A CN103692041 A CN 103692041A
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- target material
- silicon target
- backboard
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
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Abstract
The invention provides a brazing method for a silicon target component. According to the brazing method for the silicon target component, indium is used as a brazing material; an indium brazing material layer is coated on each of the welding surfaces of a silicon target and a back plate, and then the welding surfaces, which are coated with the indium brazing material layers, of the silicon target and the back plate are adhered together for brazing to form the target component. Inspection shows that the bonding rate of the silicon target and the back plate in the silicon target component prepared by the brazing method disclosed by the invention is up to over 95 percent and can completely meet a requirement on high-intensity bonding of the silicon target and the back plate in a magnetron sputtering process.
Description
Technical field
The present invention relates to semiconductor sputter field, particularly relate to a kind of method for welding of silicon target material assembly.
Background technology
Magnetron sputtering is a kind of charged particle bombardment target that utilizes, make target atom from surface escaping uniform deposition the substrate coating technique on substrate.All even controllabilitys of the metal coating that magnetron sputtering is high with its sputtering raste, substrate temperature rise is low, film-Ji adhesion is good, excellent are strong etc., and advantage becomes the most excellent substrate coating technique, thereby is widely used in integrated circuit fabrication process.
Target material assembly is to consist of the backboard that meets the target of sputtering performance and be combined, have some strength with described target.Backboard can be played a supporting role in described target material assembly is assembled to sputtering machine table, and has the effect of conduction heat.Target material assembly, by target and backboard are welded together to form, need make it both can be arranged on reliably on sputtering machine table, can under magnetic field, electric field action, effectively control and carry out sputter again simultaneously.
In the welding procedure of target and backboard, soldering is that a kind of fusing point that utilizes is than the low-melting filling metal of mother metal (by brazing material) (being called solder or scolder), under lower than mother metal fusing point, higher than the temperature of solder fusing point, heat mother metal and scolder simultaneously, cause after solder fusing, soak and fill up the gap that mother metal connects, solder diffuses to form the firm welding method being connected mutually with mother metal.In magnetron sputtering process, the target material assembly that adopts soldering to prepare, its brazing layer syndeton makes target and backboard linkage interface have good heat-conductive characteristic, and it can effectively improve the heat dispersion of target material assembly; And after magnetron sputtering finishes, can adopt suitable temperature fusing target and the solder layer between backboard, thereby backboard is reused, save the preparation cost of target.
Yet in the soldering processes of silicon target material and backboard, because highly purified silicon materials are difficult to fully infiltrate fusion and cannot make target and the abundant combination of backboard with solder, cannot reach welding requirements.Make, under high temperature at magnetron sputtering, condition of high voltage, thereby silicon target material and backboard joint portion are easy to crack, cause backboard to come off, to make sputter cannot reach the uniform effect of sputter, also may cause damage to sputtering machine table simultaneously.Thereby how to improve the soldering effect of silicon target material and backboard, be those skilled in the art's urgent problems.
Summary of the invention
The method for welding that the object of this invention is to provide a kind of silicon target material assembly.In the present invention, using pure phosphide material as solder, solder side at target and backboard all forms one deck indium solder layer, the solder side of described target and backboard is being fitted after soldering, can obtain the silicon target material assembly of silicon target material and backboard high strength bond, thereby meet magnetron sputtering for the requirement of silicon target material assembly.
Particularly, the method for welding of silicon target material assembly provided by the present invention comprises the following steps:
Silicon target material and backboard are provided;
On the solder side of described silicon target material and backboard, apply respectively one deck indium solder layer;
By being coated with the described silicon target material of described indium solder layer and the laminating of the solder side of backboard, carry out soldering, described silicon target material is soldered on described backboard, form silicon target material assembly;
Cooling described silicon target material assembly.
Alternatively, on the solder side of described silicon target material and backboard, apply in one deck indium solder layer process, control the temperature of described silicon target material and backboard between 190 ~ 250 ℃, fully melt the indium solder of placing on the solder side of described silicon target material and backboard, thereby form described indium solder layer.
Alternatively, after described indium solder fusing, with ultrasonic wave, process described indium solder is scattered on the solder side of described silicon target material and backboard uniformly.
Alternatively, the power output that the technological parameter that described ultrasonic wave is processed is ultrasonic oscillator is 15KHz to 30KHz.
Alternatively, to be coated with before the described silicon target material of described indium solder layer and the laminating of the solder side of backboard, on the solder side of described backboard or silicon target material, place for assembling the solder polymerization screw mandrel of the rear solder of fusing on solder side, after described silicon target material and backboard laminating, described solder polymerization screw mandrel is sandwiched between described silicon target material and backboard.
Alternatively, described solder polymerization screw mandrel diameter is 0.2 ~ 1.0mm.
Alternatively, described solder polymerization screw mandrel is made of copper.
Alternatively, described solder polymerization screw mandrel is positioned over the mid portion of described backboard.
Alternatively, on the solder side of described backboard or silicon target material, place the many solder polymerization screw mandrels that diameter is identical; Described many solder polymerization screw mandrels are positioned at the solder side scope of described silicon target material and backboard completely, and mutually disjoint.
Alternatively, when described silicon target material assembly is cooling, between described silicon target material and backboard, evenly apply the pressure of 500 ~ 900N, when strengthening the bonding strength of described silicon target material and backboard, prevent from, in described silicon target material and backboard cooling procedure, deformation occurs.
Alternatively, on the solder side of described silicon target material and backboard, in coated with indium solder layer and described brazing process, the air humidity of control operation environment is less than or equal to 40%.
Alternatively, described backboard is copper backboard.
Compared with prior art, the present invention has the following advantages:
The method for welding of silicon target material assembly of the present invention be take pure indium as brazing material, on the solder side of silicon target material and backboard, apply respectively one deck indium solder layer, by being coated with the silicon target material of indium solder layer and the solder side of backboard, fit afterwards, carry out soldering, form target material assembly.Through check, in the silicon target material assembly that employing the present invention makes, the combination rate of silicon target material and backboard reaches more than 95%, and it meets in magnetron sputtering process completely, for the requirement of silicon target material and backboard high strength bond.
Wherein, after described indium solder fusing, on the solder side of described silicon target material and backboard, form the indium solder layer that is flow-like, thereby in possibility, before the solder side of described silicon target material and backboard fits, on the solder side of described silicon target material or backboard, place solder polymerization screw mandrel, it can be efficiently by the solder cohesion of described solder polymerization screw mandrel periphery, thereby guarantee the solder layer density quality between target and backboard in brazing process, improve brazing quality.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method for welding of a kind of silicon target material assembly of the present invention;
Fig. 2 a ~ Fig. 2 c is silicon target material and the backboard welding process schematic diagram of one embodiment of the invention.
The specific embodiment
As described in background, the target material assembly that adopts soldering to prepare, the brazing layer being positioned between target and backboard makes target and backboard linkage interface have good heat-conductive characteristic, in magnetron sputtering technique, make target material assembly there is good heat dispersion, thereby improve the quality of target material assembly; And after magnetron sputtering finishes, can adopt suitable temperature fusing target and the solder layer between backboard, and target and backboard are separated, thereby backboard is reused, save the preparation cost of target.
Yet in the soldering processes of silicon target material and backboard, the solders such as the conventional copper using, aluminium, nickel, tin, lead are difficult to fully infiltrate fusion with highly purified silicon target material, make silicon target material and the backboard bond strength of the follow-up silicon target material assembly making poor, under the high temperature of magnetron sputtering, condition of high voltage, silicon target material and backboard joint portion are easy to crack, cannot reach magnetron sputtering technique requirement.
For this reason, in the method for welding of silicon target material assembly of the present invention, the pure indium (purity reaches 99.99%) of take is solder, solder side at silicon target material and backboard (as copper backboard) applies one deck indium solder layer simultaneously, with the silicon target material of coated with indium solder layer and the laminating of the solder side of backboard, carry out soldering afterwards, thereby obtain silicon target material assembly.Take silicon target material and copper backboard is example, adopts the present invention to obtain after the silicon target material assembly that comprises silicon target material and copper backboard, with C-SCAN, detects solder bond rate, finds, the combination rate of silicon target material and copper backboard reaches 95%.
It meets the requirement that magnetron sputtering is used completely.
In conjunction with reference to shown in figure 1, embodiment of the present invention provides a kind of method for welding of silicon target material assembly, comprises the steps:
Step S1, provides silicon target material and backboard;
Step S2 applies respectively one deck indium solder layer on the solder side of described silicon target material and backboard;
Step S3, is coated with the laminating of the silicon target material of described indium solder layer and the solder side of backboard by described, carries out soldering, and described silicon target material is soldered on described backboard, forms silicon target material assembly;
Step S4, cooling described target material assembly.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Wherein, set forth in the following description a lot of details so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here, implement, so the present invention has not been subject to the restriction of following public specific embodiment.
In conjunction with reference to shown in figure 1 and Fig. 2 a ~ 2c.
In step S1, provide a silicon target material 10 and corresponding backboard 20, clean described silicon target material 10 and backboard 20, guarantee that the solder side of silicon target material 10 and backboard 20 is clean.
Wherein, the shape of described silicon target material 10 can require rounded, rectangle, annular, taper shape or other arbitrary regular shapes or irregularly shaped according to applied environment and magnetron sputtering.Its thickness can for 1mm to 80mm not etc.And described silicon target material 10 peripheral size while now welding, for adding the surplus of 2mm to 5mm in its actual design (moulding target size design when actual magnetron sputtering is used), thickness for adding the surplus of 1mm to 3mm in actual design size.Its object that increases surplus is that the follow-up mechanical processing steps of silicon target material assembly to completing after soldering provides well-to-do processing space.
In step S2, shown in figure 2a, on the solder side of described backboard 20 and silicon target material 10, apply respectively one deck indium solder layer 32 and 31.Its detailed process comprises:
Described backboard 20 and silicon target material 10 are positioned over respectively a warm table, the indium solder of pure indium are positioned over to both solders side, heat 10 to 190 ℃ ~ 250 ℃ of described backboard 20 and silicon target materials.During this time, the abundant melting of described indium scolder, thus at the solder side of described backboard 20 and silicon target material 10, apply the indium solder layer 32 and 31 that one deck is melt flow stream shape.
Heating described backboard 20 and silicon target material 10 to melt in pure indium solder process, the air humidity of operating environment is controlled under 40%.In the present invention, described backboard 20 and silicon target material 10 can carry out under perforation air conditions, and under normal pressure, the fusing point of indium is 156.1 ℃, and the fusing point of silicon is 1420 ℃, under 190 ~ 250 ℃ of conditions, be enough to make solder fusing, and silicon target material 10 are not oxidizable.In addition, also need the air humidity of operating environment to be controlled in and to be less than or equal to 40%, now inventor finds, not oxidizable for the indium after fusing yet, thereby under above-mentioned condition, can obtain the indium solder layer of high-quality, silicon target material 10 and indium solder layer 31 are fully infiltrated.
In preferred version, after the fusing of described indium solder, backboard 20 and silicon target material 10 described in continuous heating, and with ultrasonic wave, described pure indium scolder is scattered on the solder side of described backboard 20 and silicon target material 10 uniformly.Described supersonic treatment manually ultrasonic brazing unit carries out, and concrete optimal process parameter is that ultrasonic oscillator power output is 15KHz to 30KHz.During this time, ultrasonic wave is processed backboard 20 and the silicon target material 10 be coated with pure indium solder layer, and it not only can be so that pure indium solder be evenly distributed on the solder side of silicon target material 10 and backboard 20, but also can effectively remove oxidation waste material and the residue that may exist in indium solder.Thereby make to allow indium solder fully infiltrate the solder side of described silicon target material 10 and backboard 20, thereby improve the bond strength of welding.
Step S3, is coated with the laminating of the silicon target material 10 of described indium solder layer 31 and 32 and the solder side of backboard 20 by described, carries out soldering, and described silicon target material 10 is soldered on described backboard 20, forms silicon target material assembly.
Its concrete steps, with reference to shown in figure 2b, until evenly applying behind one deck indium solder layer 31 and 32 on the solder side at described silicon target material 10 and backboard 20, are carried out soldering to silicon target material 10 and backboard 20.Non-solder side with vacuum cup absorption silicon target material 10, make described silicon target material 10 be coated with the solder side of described indium solder layer 31 and solder side that backboard 20 is coated with indium solder layer 32 fits, utilize above-mentioned warm table continuous heating backboard 20 under said temperature, carry out soldering.And before described silicon target material 10 and backboard 20 laminatings, at described backboard 20, be coated with on the solder side of described indium solder layer 32, place solder polymerization screw mandrel 4.Described solder polymerization screw mandrel 4 effectively its periphery of polymerization is the indium scolder of flow-like, thereby improves the solder density of 10 of backboard 20 and silicon target materials, improves brazing quality.And, as shown in Figure 2 b, when silicon target material 10 is placed in described backboard 20 tops, after both laminatings, quality based on silicon target material 10, the indium solder layer that may push silicon target material 10 and backboard 20 junctions, described solder polymerization screw mandrel 4 can effectively be avoided the excessive bleed of the solder between silicon target material 10 and backboard 20.Thereby, the solder layer thickness that the diameter of described solder polymerization screw mandrel 4 and the described silicon target material 10 of presetting and backboard are 20 is (in soldering processes, atom by solder is realized target and backboard combination in the former diffusion of the faying face of target and backboard, thereby how many direct bond strengths that affect target and backboard of soldering amount.In silicon target material assembly after moulding, thickness, the area of the thickness of the brazing material layer that silicon target material 10 and backboard are 20 based on described silicon target material and backboard estimated to set) be associated, described solder polymerization screw mandrel 4 is assembled the solder while of periphery, can not be in brazing process, between solder and backboard, silicon target material, atom spreads to realize high strength brazing and causes harmful effect.In the present invention, described solder polymerization screw mandrel 4 diameters are roughly 0.2 ~ 1.0mm.Inventor finds, is directed in the present invention, and the indium solder layer 31 that is flow-like of last moulding on silicon target material 10, solder polymerization silk 4 degree of polymerization for periphery solder of this size are best.Described solder polymerization screw mandrel 4 can adopt as metals such as copper and make, and it can not affect the brazing quality of backboard 20 and silicon target material 10.
In preferred version, in the scope of the solder side of described backboard 20, can place equably the many described solder polymerization screw mandrels 4 that diameter is identical, many described solder polymerization screw mandrels 4 mutually disjoint, as adopted parallel placement.In possibility, described many solder polymerization screw mandrels 4 tend to place near the mid portion of described backboard, certainly the concrete quantity of described many solder polymerization screw mandrels 4, and placement location is according to the shape of described backboard 20 and silicon target material 10, and solder side size and determining.
As shown in Fig. 2 a ~ 2c, described backboard 20 and silicon target material 10 are tabular, although can alleviating solder to a certain extent, the solder polymerization screw mandrel 4 between described backboard 20 and silicon target material 10 overflows, if but 20 default solder layer thickness of described silicon target material 10 and backboard are greater than described solder polymerization screw mandrel 4 diameters, still may there is part solder to overflow, thereby after described both solder side laminatings, can the fixture (not shown) of sealing be set around the periphery of the linking of described backboard 20 and silicon target material 10, thereby avoid the solder of 10 of backboard 20 and silicon target materials to overflow.
Step S4, cooling described target material assembly.At described silicon target material 10 and backboard 20 heating solderings, after 3 ~ 4 hours, just can stop heating, carry out cooling processing, thereby form silicon target material assembly.During this time, preferably, in described target material assembly cooling period, between described silicon target material or backboard, evenly apply the pressure of 500 ~ 900N, when strengthening the bonding strength of described silicon target material 10 and backboard 20, prevent from, in described silicon target material and backboard 20 cooling procedures, deformation occurs.
In the present invention, described backboard 20 can be conventional as aluminium, acieral, copper and acid bronze alloy, and indium solder and above-mentioned material backboard all have good wellability, thereby can obtain the silicon target material assembly of high strength bond.Take copper backboard as example, utilize C-SCAN to detect solder bond rate, its solder bond rate of the silicon target material assembly that the silicon target material that this employing the present invention obtains and copper backboard form reaches 95%, and described silicon target material components welding performance is very reliable.
Above-mentioned by the explanation of embodiment, should be able to make professional and technical personnel in the field understand better the present invention, and can reproduce and use the present invention.Those skilled in the art can do not depart from the spirit and scope of the invention in the situation that to above-described embodiment do various changes according to described principle herein and modification is apparent.Therefore, the present invention should not be understood to be limited to above-described embodiment shown in this article, and its protection domain should be defined by appending claims.
Claims (12)
1. a method for welding for silicon target material assembly, is characterized in that, comprises the following steps:
Silicon target material and backboard are provided;
On the solder side of described silicon target material and backboard, apply respectively one deck indium solder layer;
By being coated with the described silicon target material of described indium solder layer and the laminating of the solder side of backboard, carry out soldering, described silicon target material is soldered on described backboard, form silicon target material assembly;
Cooling described silicon target material assembly.
2. the method for welding of silicon target material assembly according to claim 1, it is characterized in that, on the solder side of described silicon target material and backboard, apply in one deck indium solder layer process, control the temperature of described silicon target material and backboard between 190 ~ 250 ℃, the indium solder of fully placing on the solder side of the described silicon target material of fusing and backboard, thus described indium solder layer formed.
3. the method for welding of silicon target material assembly according to claim 2, is characterized in that, after described indium solder fusing, with ultrasonic wave, processes described indium solder is scattered on the solder side of described silicon target material and backboard uniformly.
4. the method for welding of silicon target material assembly according to claim 3, is characterized in that, the power output that the technological parameter that described ultrasonic wave is processed is ultrasonic oscillator is 15KHz to 30KHz.
5. the method for welding of silicon target material assembly according to claim 1, it is characterized in that, to be coated with before the described silicon target material of described indium solder layer and the laminating of the solder side of backboard, on the solder side of described backboard or silicon target material, place for assembling the solder polymerization screw mandrel of the rear solder of fusing on solder side, after described silicon target material and backboard laminating, described solder polymerization screw mandrel is sandwiched between described silicon target material and backboard.
6. the method for welding of silicon target material assembly according to claim 5, is characterized in that, described solder polymerization screw mandrel diameter is 0.2 ~ 1.0mm.
7. the method for welding of silicon target material assembly according to claim 5, is characterized in that, described solder polymerization screw mandrel is made of copper.
8. the method for welding of silicon target material assembly according to claim 5, is characterized in that, described solder polymerization screw mandrel is positioned over the mid portion of described backboard.
9. the method for welding of silicon target material assembly according to claim 5, is characterized in that, places the many solder polymerization screw mandrels that diameter is identical on the solder side of described backboard or silicon target material; Described many solder polymerization screw mandrels are positioned at the solder side scope of described silicon target material and backboard completely, and mutually disjoint.
10. the method for welding of silicon target material assembly according to claim 1, it is characterized in that, when described silicon target material assembly is cooling, between described silicon target material and backboard, evenly apply the pressure of 500 ~ 900N, when strengthening the bonding strength of described silicon target material and backboard, prevent from, in described silicon target material and backboard cooling procedure, deformation occurs.
The method for welding of 11. silicon target material assemblies according to claim 1, is characterized in that, on the solder side of described silicon target material and backboard, in coated with indium solder layer and described brazing process, the air humidity of control operation environment is less than or equal to 40%.
12. according to the method for welding of the silicon target material assembly described in claim 1 ~ 11 any one, it is characterized in that, described backboard is copper backboard.
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| CN104862655A (en) * | 2015-04-23 | 2015-08-26 | 南京帝优新材料科技有限公司 | Large-size sputtering silicon target |
| CN105618886A (en) * | 2014-10-28 | 2016-06-01 | 宁波江丰电子材料股份有限公司 | Manufacturing method for target material assembly |
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| CN105779957B (en) * | 2016-03-22 | 2018-12-28 | 广西晶联光电材料有限责任公司 | A kind of back metal method of ITO target |
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| CN107755837B (en) * | 2016-08-18 | 2020-04-28 | 宁波江丰电子材料股份有限公司 | Method for manufacturing target assembly |
| CN107755837A (en) * | 2016-08-18 | 2018-03-06 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN108817588A (en) * | 2018-05-30 | 2018-11-16 | 苏州精美科光电材料有限公司 | A kind of pipe target applying method |
| CN111195768A (en) * | 2020-03-18 | 2020-05-26 | 宁波江丰电子材料股份有限公司 | Welding method of C-SiC sputtering target material |
| CN112222553A (en) * | 2020-09-27 | 2021-01-15 | 宁波江丰电子材料股份有限公司 | Molybdenum target welding method |
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