CN106624235A - Target material assembly and manufacturing method thereof - Google Patents
Target material assembly and manufacturing method thereof Download PDFInfo
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- CN106624235A CN106624235A CN201510728688.XA CN201510728688A CN106624235A CN 106624235 A CN106624235 A CN 106624235A CN 201510728688 A CN201510728688 A CN 201510728688A CN 106624235 A CN106624235 A CN 106624235A
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- China
- Prior art keywords
- target material
- solder
- backboard
- indium oxide
- solder side
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a target material assembly and a manufacturing method thereof. The manufacturing method of the target material assembly comprises the following steps: providing an indium tin oxide target material, a backboard and a welding flux, wherein the surface, used for welding, of the indium tin oxide target material is a first welding surface, and the surface, used for welding, of the backboard is a second welding surface; the welding flux is an indium welding flux; welding the first welding surface of the indium tin oxide target material and the second welding surface of the backboard through the indium welding flux to form the target material assembly, wherein the indium tin oxide target material and the backboard are welded through the indium welding flux; and the indium tin oxide target material can be infiltrated very well by the indium welding flux. Therefore, the welding strength of the target material assembly can be improved. In addition, the melting point of the indium welding flux is low and the welding temperature is low, so that the internal structure of the target material assembly is not easy to change in a welding process; moreover, the first welding surface of the indium tin oxide target material is not easy to oxide, so that the indium tin oxide target material and the backboard can be bonded more closely; and therefore, the welding strength of the target material assembly can be improved.
Description
Technical field
The present invention relates to sputtering target material manufacture field, more particularly to a kind of target material assembly and its manufacture method.
Background technology
Target refers to the sputtering source that various functions film is formed by sputter coating method.Briefly, target
It is exactly the target material of high speed lotus energy particle bombardment.In order to ensure that nickel chromium triangle target has good conduction and leads
Hot property, nickel chromium triangle target needs, formation welded together with backboard (material such as copper or aluminium) before sputtering
Target material assembly.
With the development of coating process, the application of target material assembly (such as tin indium oxide target material component) is also got over
Come more extensive.Because there is tin indium oxide good electricity to conduct and optical transparence, tin indium oxide target material
Component has in fields such as making liquid crystal display, Electronic Paper, Organic Light Emitting Diode and solar cells
Important application.
Meanwhile, with the development of semiconductor applications, wafer size constantly expands, and sputtering power is gradually stepped up.
Semiconductor applications require also to improve constantly to target with the weld strength and welded rate of backboard.Additionally, existing
Under some sputtering technologies, the working environment of target material assembly is very severe, in sputter procedure, target material assembly
Target side be generally under HTHP, and backboard side then in certain pressure cold water in, this
Just the welding procedure of target and backboard is put forward higher requirement.
However, the target material assembly that prior art is formed has solder bond rate low, the little shortcoming of weld strength.
The content of the invention
The problem that the present invention is solved is to provide a kind of target material assembly and its manufacture method, improves tin indium oxide target
The weld strength of material component.
To solve the above problems, the present invention provides a kind of manufacture method of target material assembly, including：A kind of target
The manufacture method of material component, it is characterised in that include：Tin indium oxide target material, backboard and solder are provided,
It is the first solder side that the tin indium oxide target material is used for the face of welding, and it is that the backboard is used for the face of welding
Two solders side, the solder is indium solder；By the indium solder to the tin indium oxide target material first
Second solder side of solder side and backboard is welded, to form target material assembly.
Optionally, the purity of the indium solder is more than or equal to 99.9%.
Optionally, the material of the backboard is molybdenum.
Optionally, by the indium solder to the first solder side of the tin indium oxide target material and backboard
The step of two solders side are welded includes：Heat the tin indium oxide target material and backboard；In the oxidation
Solder is placed on first solder side of indium tin target and the second solder side of backboard；By the tin indium oxide target
First solder side of material and the second solder side of backboard are fitted；Cooled down after laminating, formed target
Component.
Optionally, the step of heating the tin indium oxide target material and backboard includes：Heat the tin indium oxide
Target and backboard, are warming up to the first solder side of tin indium oxide target material and the second solder side of backboard
155～165 degrees Celsius.
Optionally, the step of heating the tin indium oxide target material and backboard includes：Tin indium oxide target material is put
It is placed on the first heating platform, is warming up to 220～240 degrees Celsius；Backboard is positioned over into the second heating platform
On, it is warming up to 170～190 degrees Celsius.
Optionally, it is described on the first solder side of the tin indium oxide target material and the second solder side of backboard
The step of placing solder includes：The solder side of the tin indium oxide target material first and the solder side of backboard second are entered
Row infiltration is processed.
Optionally, the step of infiltration is processed includes：Solder is positioned over into the tin indium oxide target material
On one solder side, after the solder fusing, by ultrasonic treatment unit or steel brush to the indium oxide
The solder side of tin target first is processed；Solder is positioned on the solder side of the backboard second, treats described
After solder fusing, the solder side of the backboard second is processed by ultrasonic treatment unit or steel brush.
Optionally, the second solder side of the first solder side of the tin indium oxide target material and backboard is pasted
Before the step of conjunction, the manufacture method also includes：After solder fusing, the oxide layer of solder surface is removed.
Optionally, by the indium solder to the first solder side of the tin indium oxide target material and backboard
The step of two solders side are welded includes：Many supporting wires, institute on the second solder side of the backboard
State that many supporting wires are parallel to each other or many supporting wires are vertically arranged two-by-two.
Optionally, a diameter of 2～3mm of the supporting wire.
Optionally, before the step of heating the tin indium oxide target material and backboard, the manufacture method is also wrapped
Include, on the second solder side of the backboard soakage layer is formed.
Optionally, the material of the soakage layer is nickel.
Optionally, the thickness of the soakage layer is 6～10 μm.
Accordingly, the present invention also provides a kind of target material assembly, including backboard；Indium oxide on backboard
Tin target；Solder between backboard and tin indium oxide target material, the solder is indium solder.
Optionally, the purity of the indium solder is more than or equal to 99.9%.
Optionally, the material of the backboard is molybdenum.
Optionally, the thickness of the solder is 2～3mm.
Optionally, the target material assembly also includes：Many between backboard and tin indium oxide target material
Support wire, many supporting wires are parallel to each other or many supporting wires are vertically arranged two-by-two.
Optionally, the target material assembly also includes：Soakage layer between backboard and solder, the leaching
The material of profit layer is nickel.
Compared with prior art, technical scheme has advantages below：
In the manufacture method of the target material assembly of the present invention, tin indium oxide target material and backboard are entered by indium solder
Row welding, indium solder can well infiltrate tin indium oxide target material.Therefore, it is possible to improve the weldering of target material assembly
Connect intensity.
Additionally, the fusing point of indium solder is relatively low, welding temperature is relatively low, so as to tin indium oxide target in welding process
Material internal organizational structure is less likely to occur to change (for example, being not susceptible to phase transformation), and tin indium oxide target material
First solder side is not easy to be oxidized, and then it is tightr that tin indium oxide target material can be made to be combined with backboard, because
This can improve the weld strength of target material assembly.
Description of the drawings
Fig. 1 is the flow chart of the embodiment of manufacture method one of target material assembly of the present invention；
Fig. 2 to Fig. 8 is the structural representation of each step of manufacture method shown in Fig. 1；
Fig. 9 is the structural representation of the embodiment of target material assembly of the present invention.
Specific embodiment
The manufacture method of existing target material assembly has that target material assembly weld strength is low.
In conjunction with the manufacture method of prior art target material assembly, analysis target material assembly occurs that weld strength is low to ask
The reason for topic：
In the manufacture method of prior art target material assembly, leaching of the cored solder for being used to tin indium oxide target material
Lubricant nature is poor, and the cored solder described in welding process is difficult to infiltrate tin indium oxide target material.Additionally, existing skill
The solder melt point that art is used is higher, and welding temperature is higher, so as in tin indium oxide target material in welding process
Portion's tissue is susceptible to change (for example, it may be possible to undergoing phase transition), and tin indium oxide target material solder side is easy
It is oxidized, it is difficult to make tin indium oxide target material and backboard combine closely.Therefore, after welding target material assembly weldering
Connect low intensity.
To solve the technical problem, the invention provides a kind of manufacture method of target material assembly, including：
There is provided tin indium oxide target material, backboard and solder, the tin indium oxide target material is used for the face of welding for the
One solder side, it is the second solder side that the backboard is used for the face of welding, and the solder is indium solder；Pass through
The indium solder is welded to the first solder side of the tin indium oxide target material and the second solder side of backboard,
To form target material assembly.Wherein, tin indium oxide target material and backboard are welded by indium solder, indium weldering
Material can well infiltrate tin indium oxide target material.Therefore, it is possible to improve the weld strength of target material assembly.Additionally,
The fusing point of indium solder is relatively low, and welding temperature is relatively low, so as to tin indium oxide target material interior tissue in welding process
It is less likely to occur to change (for example, being not susceptible to phase transformation), and the first solder side of tin indium oxide target material is not allowed
Easily it is oxidized, and then tin indium oxide target material can be made to be combined with backboard more closely, therefore, it is possible to improve target
The weld strength of component.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
Fig. 1 is the flow chart of the embodiment of manufacture method one of target material assembly of the present invention.
Refer to Fig. 1, the manufacture method of the target material assembly, including：
Step S1, there is provided tin indium oxide target material, backboard and solder, the tin indium oxide target material is used to weld
Face be the first solder side, the backboard be used for welding face be the second solder side, the solder be indium weldering
Material.
Step S2, heats the tin indium oxide target material and backboard；
Step S3, places on the first solder side of the tin indium oxide target material and the second solder side of backboard
Solder；
Step S4, the second solder side of the first solder side of the backboard and tin indium oxide target material is pasted
Close, realize welding；
Step S5, is cooled down after welding, forms target material assembly.
With reference to referring to figs. 2 to Fig. 8, Fig. 2 to Fig. 8 is the structural representation of each step of manufacture method shown in Fig. 1
Figure.It should be noted that the welding of target material assembly is illustrated by taking soldering as an example in the present embodiment, but
Whether the present invention may be used also in other embodiments to not being limited using target described in Welding and backboard
To form target material assembly by the way of Diffusion Welding.
Refer to Fig. 2, execution step S1, there is provided tin indium oxide target material 110, backboard 120 and solder, institute
State tin indium oxide target material 110 for welding face be the first solder side 111, the backboard 120 is for welding
Face be the second solder side 121, the solder be indium solder.
In the present embodiment, the indium solder is pure indium solder, and the purity of indium is big in specifically pure indium solder
In or equal to 99.9%.The solder can be good at infiltrating tin indium oxide target material 110.Additionally, the weldering
Material has relatively low fusing point, therefore welding temperature is relatively low, the inside group of tin indium oxide target material 110 in welding process
Knit and be less likely to occur to change (for example, being not susceptible to phase transformation), and the first solder side 111 is not easy to be oxidized,
So as to make tin indium oxide target material 110 combine closely with backboard 120.
In the present embodiment, the material of the backboard 120 is molybdenum.Molybdenum backboard can be by the wetting.
But, the present invention is not limited this, and the material of the backboard 120 can also be copper or aluminium.
Fig. 3 to Fig. 8 is refer to, is welded to the first of the tin indium oxide target material 110 by the indium solder
Second solder side 121 of 111 faces and backboard 120 is welded, to form target material assembly.Specifically, institute
State the by the indium solder to the first of the tin indium oxide target material 110 the 111 faces of welding and backboard 120
The step of two solders side 121 are welded includes：
Fig. 3 is refer to, execution step S2 heats the tin indium oxide target material 110 (referring to Fig. 2) and the back of the body
Plate 120.
In the present embodiment, the tin indium oxide target material 110 and backboard 120 are carried out by heating platform adding
Heat, is warming up to the solder side 111 of tin indium oxide target material 110 first and the solder side 121 of backboard 120 second
155～165 degrees Celsius.
Specifically, in the present embodiment, wrap the step of heat the tin indium oxide target material 110 and backboard 120
Include：The tin indium oxide target material 110 is positioned on the first heating platform, 220～240 is warming up to Celsius
Degree；The backboard 120 is positioned on the second heating platform, 170～190 degrees Celsius are warming up to.
It should be noted that in the present embodiment, the fusing point of the solder is 155～165 degrees Celsius.But
Due to first solder side the 111 to the first heating platform surface and second the 121 to the second heating platform of solder side
There is a certain distance on surface, easily makes the temperature of the first solder side 111 less than the temperature of the first heating platform,
Temperature of the temperature of the second solder side 121 less than the second heating platform.Therefore, for being positioned over the first weldering
Solder on the solder side 121 of junction 111 and second can melt, then the first heating platform and the second heating
The temperature of platform all should be slightly above the fusing point of solder.Specifically, first heating platform is warming up to
220～240 degrees Celsius；Second heating platform is warming up into 170～190 degrees Celsius.
It should be noted that in the present embodiment, the step of heat the target 110 and backboard 120 before,
The manufacture method of the target material assembly also includes：Formed on the second solder side 121 of the backboard 120
Soakage layer 122.The soakage layer 122 can improve the infiltration fusion faculty of the solder and backboard 120,
Improve weld strength.
Specifically, in the present embodiment, the solder for being adopted is indium solder, the material of the soakage layer 122
For nickel.Nickel is strong with the binding ability of indium solder, it is possible to increase the solder merges with the infiltration of backboard 120
Ability.
In the present embodiment, the forming method of the soakage layer 122 is electroless plating.Plated film technique
Simply, and formed soakage layer 122 it is good with the associativity of backboard 120, by increasing capacitance it is possible to increase weld strength.But
It is that the present invention is not limited this, and the forming method of the soakage layer 122 can also be galvanoplastic.
If it should be noted that the thickness of soakage layer 122 is too small to be difficult to play raising indium solder and backboard
The effect of 120 infiltration fusion faculty, if the thickness of soakage layer 122 is excessive, can produce waste of material.
Specifically, in the present embodiment, the solder for being adopted is indium solder, is to ensure that indium solder has with backboard 120
There is stronger infiltration fusion faculty, the thickness of the soakage layer 122 is 2～3mm.
In the present embodiment, the manufacture method also includes：In the second solder side 121 of the backboard 120
Before upper formation soakage layer 122, the first welding of tin indium oxide target material 110 is cleaned by aqueous isopropanol
Face 111 and the solder side 121 of backboard 120 second, and the He of the first solder side 111 is dried up after the washing
Second solder side 121.The first solder side 111 and the second solder side are can guarantee that by cleaning and drying up step
The cleaning on 121 surfaces, so as to improve welding quality.
Fig. 4 to Fig. 6 is refer to, in first solder side 111 and backboard 120 of the tin indium oxide target material 110
The second solder side 121 on place solder 130.The solder 130 is used to realize tin indium oxide target material 110
With the welding of backboard 120.
In the present embodiment, in first solder side 111 and backboard 120 of the tin indium oxide target material 110
The step of solder 130 are placed on second solder side 121 includes：To the tin indium oxide target material 110 first
Solder side 111 and the solder side 121 of backboard 120 second carry out infiltration process.
Specifically, in the present embodiment, to the solder side 111 of the tin indium oxide target material 110 first and backboard
120 second solders side 121 carry out the step of infiltration is processed to be included：First heating platform is warming up to
220～240 degrees Celsius afterwards, and solder is positioned on first solder side 111, treats the solder fusing
Afterwards, infiltration process is carried out to the solder side 111 of tin indium oxide target material 110 first, makes to be aoxidized described in wetting
The solder side 111 of indium tin target 110 first, improves weld strength；Second heating platform is warming up to
170～190 degrees Celsius afterwards, and solder is positioned on second solder side 121, treats the solder fusing
Afterwards, infiltration process is carried out to the solder side 121 of backboard 120 second, makes backboard 120 described in the wetting
Second solder side 121, improves weld strength.
In the present embodiment, by ultrasonic treatment unit to the solder side 111 of tin indium oxide target material 110 first
Carrying out infiltration and the solder side 121 of backboard 120 second carries out infiltration process.But the present invention is not limited this
It is fixed, in other embodiments, the infiltration process can also be carried out by steel brush.
It should be noted that in the present embodiment, in the first solder side 111 of the tin indium oxide target material 110
After the step of solder 130 are placed on the second solder side 121 of backboard 120, the manufacture method is also
Including placement supporting wire 123, the supporting wire 123 on the second solder side 121 of the backboard 120
For preserving solder 130 in follow-up cooling procedure, it is ensured that the first solder side 111 and the second solder side 121
Between the thickness of solder 130 more than or equal to the supporting wire 123 diameter.
Specifically, in the present embodiment, on the second solder side 121 of the backboard 120 supporting wire is placed
123 the step of, includes：Two supporting wires are placed in parallel on the second solder side 121 of the backboard 120
123.But, the present invention is not limited this, and the supporting wire 123 can also be three supporting wires 123
Or four supporting wires 123.Many supporting wires 123 can be placed in parallel on backboard 120, or many
Support wire 123 is vertically arranged two-by-two (for example：Four supporting wires 123 surround rectangle).
In the present embodiment, the material of the supporting wire 123 is copper.Copper can by indium wetting, so as to
Supporting wire 123 is set to combine closely with solder, it is to avoid supporting wire 123 comes off.
If it should be noted that the diameter of the supporting wire 123 is too small to be difficult to play preservation solder 130
Effect, if the diameter of the supporting wire 123 is excessive, easily produce waste of material.In the present embodiment
The solder for adopting is indium solder, and in order to pass through indium solder welding, first solder side 111 and the are realized
Solder thickness between two solders side 121 is in the range of 2～3mm.Correspondingly, it is described in the present embodiment
A diameter of 2～3mm of supporting wire 123.
If the length of the supporting wire 123 exceedes the solder side 111 of tin indium oxide target material 110 first or the back of the body
The corresponding size of the solder side 121 of plate 120 second, easily the process to follow-up target material assembly bring tired
It is difficult.Therefore, in the present embodiment, of length no more than tin indium oxide target material 110 of the supporting wire 123
The corresponding size of one solder side 111, and less than the corresponding size of the solder side 121 of backboard 120 second.
It should be noted that in the present embodiment, placing on the second solder side 121 of the backboard 120
Before supporting wire 123, the manufacture method also includes：Remove the oxide layer on the surface of solder 130.Specifically
, the oxide layer can be removed by steel brush.
Fig. 7 is refer to, by the of the second solder side 121 of the backboard 120 and tin indium oxide target material 110
One solder side 111 is fitted, and realizes welding.
Specifically, in the present embodiment, by second solder side 121 and tin indium oxide target of the backboard 120
The step of first solder side 111 of material 110 is fitted includes：After solder 130 melts, inhaled with vacuum
Disk adsorption and oxidation indium tin target 110, and be smoothly positioned on the solder side 121 of backboard 120 second, make the back of the body
The solder side 121 of plate 120 second and the solder side 111 of tin indium oxide target material 110 first are fitted.
In the present embodiment, there is the supporting wire 123 being placed in parallel on the solder side 121 of the backboard 120 second.
Second solder side 121 of the first solder side 111 of the tin indium oxide target material 110 and backboard 120 is carried out
The step of laminating, includes, the tin indium oxide target material 110 is positioned over above the supporting wire 123, makes
The supporting wire 123 supports tin indium oxide target material 110, is that solder 130 provides space, it is ensured that solder
130 have certain thickness.
Fig. 8 is refer to, is cooled down after welding, form target material assembly.
Specifically, in the present embodiment, include the step of cooled down after welding：Close second heating
Platform；Weight 140 is placed on the tin indium oxide target material 110, tin indium oxide target material 110 and backboard is made
120 under the pressure of weight 140, cools down with the second heating platform, and the weight 140 can be cooled
Reduce the deformation of tin indium oxide target material 110 in journey；Remove weight 140.
It should be noted that placing on the tin indium oxide target material 110 after weight, the supporting wire
123 can support tin indium oxide target material 110, limit solder 130 due to the squeezing action of weight 140 to
The outer trickling of first solder side 111 of tin indium oxide target material 110 such that it is able to ensure the first solder side 111
And second the thickness of solder 130 between solder side 121 more than or equal to the supporting wire 123 diameter.
It should be noted that in the present embodiment, the step of cooled down after welding after, the target group
The manufacture method of part also includes：The target material assembly is processed into by machining meets design requirement
Finished product target material assembly.
Specifically, the machining includes roughing and finishing.The roughing includes：By milling
The method of knife milling or turning is processed.The finishing includes that the method by polishing or grind is carried out
Processing.
Also, it should be noted that in the present embodiment, in the heated oxide indium tin target 110 and backboard 120
The step of after, the solder 130 is positioned over into the solder side 121 of first solder side 111 and second,
Such order can shorten solder 130 from the time for being melted to welding, so as to reduce the oxygen of solder 130
Change degree, improves weld strength.But the present invention is not limited this, in other embodiments, may be used also
Before the step of the heated oxide indium tin target 110 and backboard 120, the solder 130 is put
It is placed in the solder side 121 of first solder side 111 and second.
Correspondingly, the present invention also provides a kind of target material assembly, and specifically, the target material assembly includes：
Refer to Fig. 9, backboard 220；Tin indium oxide target material 210 on backboard 220；Positioned at backboard
Solder 230 between 220 and tin indium oxide target material 210, the solder 230 is indium solder.
In the present embodiment, the indium solder is pure indium solder, and the purity of indium is big in specifically pure indium solder
In or equal to 99.9%.The solder 230 can be good at infiltrating tin indium oxide target material 210.Additionally, institute
Stating solder 230 has relatively low fusing point, therefore welding temperature is relatively low, tin indium oxide target material 210 in welding process
Interior tissue is less likely to occur to change (for example, being not susceptible to phase transformation), and the first solder side 211 is not easy
It is oxidized such that it is able to make tin indium oxide target material 210 combine closely with backboard 220.
It is to ensure that tin indium oxide target material 210 can combine closely with backboard 220 in the present embodiment, and subtracts
Few waste of material, the thickness of the solder 230 is 2～3mm.
In the present embodiment, the material of the backboard 220 is molybdenum.Molybdenum backboard can be soaked by the solder 230
Profit.But, the present invention is not limited this, and the material of the backboard 120 can also be copper or aluminium.
It should be noted that in the present embodiment, the target material assembly also includes：Positioned at backboard 220 and oxygen
Change the supporting wire 223 between indium tin target 210, the supporting wire 223 can support tin indium oxide target material
210, it is that solder 230 provides space.
Specifically, in the present embodiment, the supporting wire 223 is two for being placed in parallel, but of the invention
This is not limited, the supporting wire 223 can also be three supporting wires 123 or four supporting wires 123.
Many supporting wires 223 can be placed in parallel on backboard 220, or many supporting wires are vertically arranged two-by-two
(for example：Four supporting wires 123 surround rectangle).
It should be noted that in the present embodiment, in order to pass through indium solder welding, the tin indium oxide are realized
The thickness of solder 230 between the solder side 211 of target 210 first and the solder side 221 of backboard 220 second exists
In the range of 2～3mm.Correspondingly, in the present embodiment, a diameter of 2～3mm of the supporting wire 223.
Also, it should be noted that in the present embodiment, the target material assembly also includes：Positioned at the He of backboard 220
Soakage layer 222 between solder 230.The soakage layer 122 can improve the solder 230 and backboard
220 infiltration fusion faculty, improves weld strength.
Specifically, in the present embodiment, the solder 230 for being adopted for indium solder, the soakage layer 222
Material is nickel, and nickel is strong with the binding ability of indium solder, it is possible to increase the solder 230 and backboard 220
Infiltration fusion faculty.
It is in order to improve the infiltration fusion faculty of the solder 230 and backboard 220 and most in the present embodiment
Amount reduces waste of material, and the thickness of the soakage layer 222 is 6～10 μm.
To sum up, the present invention provides a kind of target material assembly and its manufacture method, wherein, by indium solder to oxygen
Change indium tin target and backboard is welded, indium solder can well infiltrate tin indium oxide target material.Therefore energy
Enough improve the weld strength of target material assembly.Additionally, the fusing point of indium solder is relatively low, welding temperature is relatively low, from
And tin indium oxide target material interior tissue is less likely to occur to change (for example, being not susceptible to phase transformation) in welding process,
And the first solder side of tin indium oxide target material is not easy to be oxidized, and then tin indium oxide target material can be made with the back of the body
It is hardened to close tightr.Therefore, the manufacture method of target material assembly of the invention can improve the weldering of target material assembly
Intensity is connect, the solder bond rate that can make target material assembly reaches more than 95%.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (20)
1. a kind of manufacture method of target material assembly, it is characterised in that include：
There is provided tin indium oxide target material, backboard and solder, the tin indium oxide target material is used for the face of welding for the
One solder side, it is the second solder side that the backboard is used for the face of welding, and the solder is indium solder；
By the indium solder to the first solder side of the tin indium oxide target material and the second solder side of backboard
Welded, to form target material assembly.
2. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that the indium solder it is pure
Degree is more than or equal to 99.9%.
3. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that the material of the backboard
For molybdenum.
4. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that by the indium solder
The step of second solder side of the first solder side and backboard to the tin indium oxide target material is welded is wrapped
Include：
Heat the tin indium oxide target material and backboard；
Solder is placed on the first solder side of the tin indium oxide target material and the second solder side of backboard；
Second solder side of the first solder side of the tin indium oxide target material and backboard is fitted；
Cooled down after laminating, formed target material assembly.
5. the manufacture method of target material assembly as claimed in claim 4, it is characterised in that the heating indium oxide
The step of tin target and backboard, includes：The tin indium oxide target material and backboard are heated, tin indium oxide target is made
First solder side of material and the second solder side of backboard are warming up to 155～165 degrees Celsius.
6. the manufacture method of target material assembly as claimed in claim 5, it is characterised in that the heating indium oxide
The step of tin target and backboard, includes：
Tin indium oxide target material is positioned on the first heating platform, 220～240 degrees Celsius are warming up to；
Backboard is positioned on the second heating platform, 170～190 degrees Celsius are warming up to.
7. the manufacture method of target material assembly as claimed in claim 4, it is characterised in that described in the oxidation
The step of solder is placed on first solder side of indium tin target and the second solder side of backboard includes：To institute
Stating the solder side of tin indium oxide target material first and the solder side of backboard second carries out infiltration process.
8. the manufacture method of target material assembly as claimed in claim 7, it is characterised in that what the infiltration was processed
Step includes：
Solder is positioned on the solder side of the tin indium oxide target material first, after the solder fusing, is passed through
Ultrasonic treatment unit or steel brush are processed the solder side of the tin indium oxide target material first；
Solder is positioned on the solder side of the backboard second, after the solder fusing, at ultrasonic wave
Reason device or steel brush are processed the solder side of the backboard second.
9. the manufacture method of target material assembly as claimed in claim 4, it is characterised in that by the tin indium oxide
Before the step of first solder side of target and the second solder side of backboard are fitted, the manufacturer
Method also includes：After solder fusing, the oxide layer of solder surface is removed.
10. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that by the indium solder
The step of second solder side of the first solder side and backboard to the tin indium oxide target material is welded is wrapped
Include：The many supporting wires on the second solder side of the backboard, many supporting wires be parallel to each other or
Many supporting wires are vertically arranged two-by-two described in person.
The manufacture method of 11. target material assemblies as claimed in claim 10, it is characterised in that the supporting wire it is straight
Footpath is 2～3mm.
The manufacture method of 12. target material assemblies as claimed in claim 4, it is characterised in that the heating indium oxide
Before the step of tin target and backboard, the manufacture method also includes, second in the backboard is welded
Soakage layer is formed on face.
The manufacture method of 13. target material assemblies as claimed in claim 12, it is characterised in that the material of the soakage layer
Expect for nickel.
The manufacture method of 14. target material assemblies as claimed in claim 12, it is characterised in that the thickness of the soakage layer
Spend for 6～10 μm.
15. a kind of target material assemblies, it is characterised in that include：
Backboard；
Tin indium oxide target material on backboard；
Solder between backboard and tin indium oxide target material, the solder is indium solder.
16. target material assemblies as claimed in claim 15, it is characterised in that the purity of the indium solder is more than or waits
In 99.9%.
17. target material assemblies as claimed in claim 15, it is characterised in that the material of the backboard is molybdenum.
18. target material assemblies as claimed in claim 15, it is characterised in that the thickness of the solder is 2～3mm.
19. target material assemblies as claimed in claim 15, it is characterised in that the target material assembly also includes：It is located at
Many supporting wires between backboard and tin indium oxide target material, many supporting wires are parallel to each other or institute
State many supporting wires to be vertically arranged two-by-two.
20. target material assemblies as claimed in claim 15, it is characterised in that the target material assembly also includes：It is located at
Soakage layer between backboard and solder, the material of the soakage layer is nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510728688.XA CN106624235A (en) | 2015-10-30 | 2015-10-30 | Target material assembly and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510728688.XA CN106624235A (en) | 2015-10-30 | 2015-10-30 | Target material assembly and manufacturing method thereof |
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| CN106624235A true CN106624235A (en) | 2017-05-10 |
Family
ID=58809606
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510728688.XA Pending CN106624235A (en) | 2015-10-30 | 2015-10-30 | Target material assembly and manufacturing method thereof |
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| CN (1) | CN106624235A (en) |
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| CN108817588A (en) * | 2018-05-30 | 2018-11-16 | 苏州精美科光电材料有限公司 | A kind of pipe target applying method |
| CN110711970A (en) * | 2019-10-24 | 2020-01-21 | 中电国基南方集团有限公司 | Preparation method of anti-oxidation gold-tin solder |
| CN110937911A (en) * | 2018-09-25 | 2020-03-31 | 宁波江丰电子材料股份有限公司 | Target assembly forming method |
| CN113199106A (en) * | 2021-05-24 | 2021-08-03 | 宁波江丰电子材料股份有限公司 | Manufacturing method of silicon target material for semiconductor |
| CN113210785A (en) * | 2021-06-02 | 2021-08-06 | 宁波江丰电子材料股份有限公司 | Brazing method of aluminum-scandium alloy target |
| CN114833417A (en) * | 2022-06-13 | 2022-08-02 | 宁波江丰电子材料股份有限公司 | Method for welding ITO target and Mo back plate |
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Application publication date: 20170510 |