CN101677488B - High thermal conductive substrate structure and production method thereof - Google Patents
High thermal conductive substrate structure and production method thereof Download PDFInfo
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- CN101677488B CN101677488B CN2008101490483A CN200810149048A CN101677488B CN 101677488 B CN101677488 B CN 101677488B CN 2008101490483 A CN2008101490483 A CN 2008101490483A CN 200810149048 A CN200810149048 A CN 200810149048A CN 101677488 B CN101677488 B CN 101677488B
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- heat conduction
- electric conducting
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- thermal conductive
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Abstract
The invention discloses a high thermal conductive substrate structure and a production method thereof, the substrate comprises a metal substrate, a heat conduction carrying base, at least one bonding material, at least one conductive material, at least one bonding film, at least one solder mask material, a thermal conductive bonding part, a conductive bonding part and a high power element, and the high thermal conducive substrate structure has the main functions of improving the thermal conductivity and the function diversity of the substrate and improving the high-power feature of an architecture.
Description
Technical field
The present invention relates to a kind of high thermal conductive substrate structure and preparation method thereof, this structure mainly is to improve the capacity of heat transmission of substrate and polynary functional.
Background technology
Prior art is to ask required capacity of heat transmission and the circuit function demand of carrying high-power components, need earlier metal substrate, insulating barrier and circuit layer to be utilized the mode moulding of hot pressing, on the substrate of this moulding, make circuit again, to form a high-power components bearing substrate, but aforesaid substrate vertical thermal conducting power is confined to its insulating barrier, and makes it use power to be difficult to improve.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of high thermal conductive substrate structure and preparation method thereof, this high thermal conductive substrate structure is to improve the capacity of heat transmission of substrate and polynary functional, and directly engage the heat conduction junction surface of high-power components by the metal substrate body, significantly to improve the capacity of heat transmission of substrate.
For achieving the above object, the invention provides a kind of high thermal conductive substrate structure, comprising: a metal substrate; One heat conduction bearing base is formed at the zone line of this metal substrate; Most grafting materials, be arranged at metal substrate top and this heat conduction bearing base around; Most electric conducting materials, be arranged at the top of those grafting materials and this heat conduction bearing base around, form a gap with this heat conduction bearing base, engage this metal substrate and this electric conducting material by this grafting material; Most engage epithelium, are arranged at this heat conduction bearing base and this a few electric conducting materials top, wherein engage at those and form most gaps between epithelium; A most anti-welding material are arranged among those gaps; One heat conduction junction surface is arranged at the top that is positioned at middle this joint epithelium; One conductive bond is arranged at the outside at this heat conduction junction surface and the top of this joint epithelium; And a high-power components, be arranged at the top of this heat conduction junction surface and those conductive bond.
And for achieving the above object, the present invention also provides a kind of manufacture method of high thermal conductive substrate, comprises step: a metal substrate is provided, and this metal substrate zone line is formed with a heat conduction bearing base; One deck grafting material is set around this metallic substrate surfaces and this heat conduction bearing base; Form layer of conductive material around this grafting material and this heat conduction bearing base, wherein electric conducting material and this heat conduction bearing base form a gap; And above this electric conducting material and this heat conduction bearing base above form most and engage epitheliums, wherein those engage and form most gaps between epitheliums.
Adopt high thermal conductive substrate structure of the present invention and preparation method thereof, can improve the capacity of heat transmission of substrate and polynary functional, and directly engage the heat conduction junction surface of high-power components, significantly improved the capacity of heat transmission of substrate by the metal substrate body.
Description of drawings
Fig. 1 goes into the schematic diagram of formula high thermal conductive substrate structure for down of the present invention;
Figure 1A～Fig. 1 H goes into the flow chart of formula high thermal conductive substrate structure for down of the present invention;
Fig. 2 is the schematic diagram of attaching type high thermal conductive substrate structure of the present invention;
Fig. 2 A～Fig. 2 I is the flow chart of attaching type high thermal conductive substrate structure of the present invention.
Wherein, Reference numeral:
1: high thermal conductive substrate 11: grafting material
13: electric conducting material 14: engage epithelium
15: heat conduction junction surface 16: high-power components
17: conductive bond 18: anti-welding material
2: high thermal conductive substrate 21: metal substrate
211: heat conduction bearing base 22: grafting material
23: insulating layer material 24: electric conducting material
25: engage epithelium 26: high-power components
27: heat conduction junction surface 28: conductive bond
29: anti-welding material
Embodiment
See also Fig. 1 goes into the formula high thermal conductive substrate structure for down of the present invention schematic diagram;
Figure 1A～Fig. 1 H goes into the flow chart of formula high thermal conductive substrate structure for down of the present invention; Fig. 2 is the flow chart of attaching type high thermal conductive substrate structure of the present invention for schematic diagram and Fig. 2 A～Fig. 2 I of attaching type high thermal conductive substrate structure of the present invention.
See also Fig. 1, Fig. 1 goes into the schematic diagram of formula high thermal conductive substrate structure for down of the present invention, and a high thermal conductive substrate 1 comprises that a metal substrate 11, a heat conduction bearing base 111, a grafting material 12, an electric conducting material 13, engage epithelium 14, a heat conduction junction surface 15, a high-power components 16, a conductive bond 17 and an anti-welding material 18 among Fig. 1.
This metal substrate 11 can be the material of a copper base or a composition metal, and this metal substrate 11 can be one or one rectangular metal substrate 11, is cut into this metal substrate 11 (seeing Figure 1A) by modes such as cuttings.
Form this conduction bearing base 111 in the middle of this metal substrate 11, this heat conduction bearing base 111 can form (seeing Figure 1B) via deposition, turner, model, welding or etched worker's method.
Then around this heat conduction bearing base 111 and above this metal substrate 11, form this grafting material 12, this grafting material 12 is a macromolecule glue material or golden altogether composite material, and can be solid-state then glue or liquid then glue, in order to reach function (seeing Fig. 1 C) in conjunction with this metal substrate, this insulating layer material and this electric conducting material.
Above this grafting material 12 and around this heat conduction bearing base 111, form this electric conducting material 13, this electric conducting material 13 can be this composite material that can be a Copper Foil, a printed circuit board (PCB), a conductor, semiconductor, a piezoelectric, a thermoelectric material or previous materials, form most gaps between this electric conducting material 13, this electric conducting material 13 is in order to conducting electric energy (seeing Fig. 1 D).
Above those electric conducting materials 13 and this heat conduction bearing base 111, form most and engage epitheliums 14, those engage epithelium 14 and form the gap each other, those engage epithelium 14 and use different composite materials according to different user demands, those engage epithelium 14 compositions and can be the composite material of a tin, a nickel gold, a silver medal, a Sillim, a metal material or the composite material of a metal material and nonmetallic materials, in order to engage the usefulness (seeing Fig. 1 E) of high power heat conducting element.
In the gap of this electric conducting material 13, engage in the gap of epithelium 14 down and go at least one anti-welding material 18, in order to prevent welding (seeing Fig. 1 F) with this.
Form this heat conduction junction surface 15 above this joint epithelium 14 of zone line, this heat conduction junction surface 15 is in order to joint element and metal substrate and conduction heat sources (seeing Fig. 1 G).
Form this conductive bond 17 in the outside at this heat conduction junction surface 15 and the top of this joint epithelium 14, this conductive bond 17 and and this heat conduction junction surface 15 between form at least one gap, this conductive bond 17 is in order to joint element and metal substrate and conduct electrical power (seeing Fig. 1 H).
Top in this conductive bond 17 and this heat conduction junction surface 15 forms this high-power components 16, so far just finishes the high thermal conductive substrate (see figure 1) with high heat conduction, conduction and defencive function.
Wherein this metal substrate 11 can be this copper base, this grafting material 12 can be this solid-state then glue and this electric conducting material 13 can be this Copper Foil, forms a kind of high thermal conductive substrate.
See also Fig. 2, Fig. 2 is the schematic diagram of attaching type high thermal conductive substrate structure of the present invention, and a high thermal conductive substrate 2 comprises a metal substrate 21, a heat conduction bearing base 211, a grafting material 22, an insulating layer material 23, an electric conducting material 24, most joint epithelium 25, one high-power elements 26, a heat conduction junction surface 27, a conductive bond 28 and most anti-welding materials 29 among Fig. 2.
See also Fig. 2 A～Fig. 2 I has the high heat conduction base of insulating layer material for the present invention flow chart
This metal substrate 21 can be copper base or or the material of a composition metal, this metal substrate 21 can be one or one rectangular metal substrate 21, is cut into this metal substrate 21 (seeing Fig. 2 A) by modes such as cuttings.
Form this conduction bearing base 211 in the middle of this metal substrate 21, this heat conduction bearing base 211 can form (seeing Fig. 2 B) via deposition, turner, model, welding or etched worker's method.
Then around this heat conduction bearing base 211 and above this metal substrate 21, form this grafting material 22, this grafting material 22 is a macromolecule glue material or golden altogether composite material, and can be solid-state then glue or liquid then glue, in order to reach function (seeing Fig. 2 C) in conjunction with this metal substrate, this insulating layer material and this electric conducting material.
Above this grafting material 22 and around this heat conduction bearing base 211, form this insulating layer material 23, this insulating layer material 23 is the composite material of a macromolecular material, a ceramic material, a glass fibre or a previous materials, this insulating layer material 23 passes through in order to stop electric energy, this insulating layer material 23 is incorporated into this metal substrate 21 tops by this grafting material 22, and this insulating layer material 23 can use wherein one deck or use (seeing Fig. 2 D) in the lump according to using to ask with this grafting material 22.
Above insulating layer material 23 and around this heat conduction bearing base 211, form this electric conducting material 24, this electric conducting material 24 can be this composite material that can be a Copper Foil, a printed circuit board (PCB), a conductor, semiconductor, a piezoelectric, a thermoelectric material or previous materials, this electric conducting material 24 and and this heat conduction bearing base 211 around between form a space, this electric conducting material 24 is in order to conducting electric energy (seeing Fig. 2 E).
Above this electric conducting material 24 and this heat conduction bearing base 211, form most and engage epitheliums 25, those engage epithelium 25 and form the gap each other, those engage epithelium 25 and use different composite materials according to different user demands, those engage epithelium 25 compositions and can be the composite material of a tin, a nickel gold, a silver medal, a Sillim, a metal material or the composite material of a metal material and nonmetallic materials, in order to engage the usefulness (seeing Fig. 2 F) of high power heat conducting element.
Forming at least one anti-welding material 29 with engaging between the epithelium 25 on this electric conducting material 24, more fit between this electric conducting material 24 and this heat conduction bearing base 211 at zone line this anti-welding material, in order to prevent to weld (seeing Fig. 2 G).
Form this heat conduction junction surface 27 above this joint epithelium 25 of zone line, this heat conduction junction surface 27 is in order to joint element and metal substrate and conduction heat sources (seeing Fig. 2 H).
Form this conductive bond 28 in the outside at this heat conduction junction surface 27 and the top of this joint epithelium 25, this conductive bond 28 and and this heat conduction junction surface 27 between form at least one gap, this conductive bond 28 is in order to joint element and metal substrate and conduct electrical power (seeing Fig. 2 I).
Top in this conductive bond 28 and this heat conduction junction surface 27 forms this high-power components 26, so far just finishes the high thermal conductive substrate (see figure 2) with high heat conduction, conduction and defencive function.
Wherein this metal substrate 21 can be that this copper base, this grafting material 22 can be this solid-state then glue, this insulating layer material 23 can be this glass fibre and this electric conducting material 24 can be this printed circuit board (PCB), forms second kind of high thermal conductive substrate; And this metal substrate 21 can be this copper base, this grafting material 22 and can be that this liquid state is followed glue, this insulating layer material 23 can be a ceramic substrate (this ceramic material) and this electric conducting material 24 can be this thermoelectric material, forms the high thermal conductive substrate of thermoelectric protection.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (26)
1. a high thermal conductive substrate structure is characterized in that, comprising:
One metal substrate;
One heat conduction bearing base is formed at the zone line of this metal substrate;
Most grafting materials, be arranged at metal substrate top and this heat conduction bearing base around;
Most electric conducting materials, be arranged at the top of those grafting materials and this heat conduction bearing base around, form a gap with this heat conduction bearing base, engage this metal substrate and this electric conducting material by this grafting material;
Most engage epithelium, are arranged at this heat conduction bearing base and this a few electric conducting materials top, wherein engage at those and form most gaps between epithelium;
A most anti-welding material are arranged among those gaps;
One heat conduction junction surface is arranged at the top of this joint epithelium that is positioned at zone line;
One conductive bond is arranged at the outside at this heat conduction junction surface and the top of this joint epithelium; And
One high-power components is arranged at the top of this heat conduction junction surface and those conductive bond.
2. high thermal conductive substrate structure according to claim 1 is characterized in that this high thermal conductive substrate structure also comprises at least one insulating layer material, and this insulating layer material places between this grafting material and this electric conducting material.
3. high thermal conductive substrate structure according to claim 2, it is characterized in that, this grafting material can be a macromolecule glue material or golden altogether composite material, this grafting material is solid-state then glue or a liquid then glue, in order to reach the function in conjunction with this metal substrate, this insulating layer material and this electric conducting material.
4. high thermal conductive substrate structure according to claim 1 is characterized in that, those anti-welding materials, those anti-welding materials more fit between this electric conducting material and this heat conduction bearing base.
5. high thermal conductive substrate structure according to claim 1 is characterized in that this electric conducting material has at least one gap, and those anti-welding materials are embedded in the gap of those electric conducting materials.
6. high thermal conductive substrate structure according to claim 1 is characterized in that, forms the gap in the middle of this conductive bond and this heat conduction junction surface.
7. high thermal conductive substrate structure according to claim 1, it is characterized in that, this joint epithelium can be the composite material of a tin, a nickel gold, a silver medal, a Sillim, a metal material, nonmetallic materials and a metal material and nonmetallic materials, in order to engage the usefulness of high power heat conduction.
8. high thermal conductive substrate structure according to claim 2 is characterized in that, this insulating layer material can be the composite material of a macromolecular material, a ceramics material, a glass fibre or a previous materials.
9. high thermal conductive substrate structure according to claim 2 is characterized in that, this electric conducting material can be this composite material that can be a conductor, semiconductor, a piezoelectric, a thermoelectric material or previous materials.
10. the manufacture method of a high thermal conductive substrate is characterized in that, comprises step:
One metal substrate is provided, and this metal substrate zone line is formed with a heat conduction bearing base;
One deck grafting material is set around this metallic substrate surfaces and this heat conduction bearing base;
Form layer of conductive material around this grafting material and this heat conduction bearing base, wherein electric conducting material and this heat conduction bearing base form a gap; And
Above this electric conducting material and this heat conduction bearing base above form most and engage epitheliums, wherein those engage and form most gaps between epitheliums.
11. manufacture method according to claim 10 is characterized in that, this metal substrate, this grafting material and this electric conducting material are via hot-forming.
12. manufacture method according to claim 10 is characterized in that, forms at least one anti-welding material in the gap of this joint epithelium.
13. manufacture method according to claim 12 is characterized in that, extends between this electric conducting material and this heat conduction bearing base at those anti-welding materials of zone line.
14. manufacture method according to claim 13 is characterized in that, the top that is positioned at this joint epithelium of zone line forms a heat conduction junction surface.
15. manufacture method according to claim 14 is characterized in that, this heat conduction junction surface around and this joint epithelium above be formed with at least one conductive bond.
16. manufacture method according to claim 15 is characterized in that, forms at least one space between this heat conduction junction surface and this conductive bond.
17. manufacture method according to claim 16 is characterized in that, the top of this heat conduction junction surface and this conductive bond forms a high-power components certainly.
18. manufacture method according to claim 10 is characterized in that, forms one deck insulation material layer between this grafting material and electric conducting material.
19. manufacture method according to claim 10 is characterized in that, this metal substrate more can be shaped via deposition, turner, model, welding or etched worker's method and have the bearing base of this heat conduction carrying.
20. manufacture method according to claim 10 is characterized in that, this metal substrate is the material of a copper base or a composition metal.
21. manufacture method according to claim 10 is characterized in that, this grafting material is solid-state then glue or liquid then glue.
22. manufacture method according to claim 10 is characterized in that, this electric conducting material is a Copper Foil, a printed circuit board (PCB), a thermoelectric material, conductor, semiconductor or a piezoelectric.
23. manufacture method according to claim 18 is characterized in that, this insulation material layer is a ceramic material, a macromolecular material or a glass fibre.
24. manufacture method according to claim 22 is characterized in that, this metal substrate is a copper base, and this grafting material is a solid-state then glue, and this electric conducting material is this Copper Foil, so as to forming this high thermal conductive substrate.
25. manufacture method according to claim 23 is characterized in that, this metal substrate is that copper base, this grafting material are solid-state then glue, and this insulation material layer is that this glass fibre and this electric conducting material are printed circuit board (PCB), so as to forming this high thermal conductive substrate.
26. manufacture method according to claim 22; it is characterized in that; this metal substrate is a copper base; this grafting material is a liquid then glue; between this grafting material and electric conducting material, form one deck insulation material layer; this insulation material layer is a ceramic material, and this electric conducting material is this thermoelectric material, so as to forming this high thermal conductive substrate of thermoelectric protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101490483A CN101677488B (en) | 2008-09-18 | 2008-09-18 | High thermal conductive substrate structure and production method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101490483A CN101677488B (en) | 2008-09-18 | 2008-09-18 | High thermal conductive substrate structure and production method thereof |
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| Publication Number | Publication Date |
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| CN101677488A CN101677488A (en) | 2010-03-24 |
| CN101677488B true CN101677488B (en) | 2010-12-08 |
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| CN2008101490483A Expired - Fee Related CN101677488B (en) | 2008-09-18 | 2008-09-18 | High thermal conductive substrate structure and production method thereof |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102655714A (en) * | 2012-04-09 | 2012-09-05 | 苏睿 | Manufacturing process of metal substrate high-conductivity metal base circuit board |
| CN102655713B (en) * | 2012-04-09 | 2014-11-26 | 苏睿 | Manufacturing process of high-conduction metal-based circuit board of metal substrate |
| TWI463710B (en) * | 2012-10-05 | 2014-12-01 | Subtron Technology Co Ltd | Mrthod for bonding heat-conducting substraye and metal layer |
| CN103687278A (en) * | 2013-11-26 | 2014-03-26 | 广州兴森快捷电路科技有限公司 | Boss-type metal-based sandwich rigid-flex plate and production method thereof |
| CN113423246B (en) * | 2021-06-29 | 2023-01-10 | 长光卫星技术股份有限公司 | Light device for efficient heat dissipation of cubic satellite electronic equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1708212A (en) * | 2004-06-11 | 2005-12-14 | 周明庆 | Heat conductive substrate apparatus |
| CN1802069A (en) * | 2005-01-05 | 2006-07-12 | 照敏企业股份有限公司 | Substrate with high heat conduction and its making process |
| CN1941346A (en) * | 2005-09-29 | 2007-04-04 | 中国砂轮企业股份有限公司 | High-heat conductive efficiency circuit board |
-
2008
- 2008-09-18 CN CN2008101490483A patent/CN101677488B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1708212A (en) * | 2004-06-11 | 2005-12-14 | 周明庆 | Heat conductive substrate apparatus |
| CN1802069A (en) * | 2005-01-05 | 2006-07-12 | 照敏企业股份有限公司 | Substrate with high heat conduction and its making process |
| CN1941346A (en) * | 2005-09-29 | 2007-04-04 | 中国砂轮企业股份有限公司 | High-heat conductive efficiency circuit board |
Non-Patent Citations (2)
| Title |
|---|
| JP特开平6-181370A 1994.06.28 |
| JP特开平7-211821A 1995.08.11 |
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| CN101677488A (en) | 2010-03-24 |
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