CN103579036A - Quality evaluation method of target assembly used in forming thin film for semiconductor layers of thin film transistor - Google Patents
Quality evaluation method of target assembly used in forming thin film for semiconductor layers of thin film transistor Download PDFInfo
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Abstract
The invention provides a quality evaluation method of a target assembly used in forming a thin film for semiconductor layers of a thin film transistor, which can simply evaluate the quality of the target assembly. The evaluation method includes a first step of preparing the target assembly which is formed by arranging a plurality of oxide target members by means of the slits of bonding materials on a back board, a second step of forming a thin film by sputtering on the target assembly, a third step of irradiating exciting-light and microwave on the area, including the seaming part corresponding to the slit of the target assembly, of the thin film, stopping the irradiation of exciting-light after the maximum value, varying based on the irradiation of the exciting-light, of the reflective wave from the seaming part of the microwave is measured, measuring the variation of the reflection rate of the reflective wave from the seaming part of the microwave after the irradiation of the exciting-light is stopped, and calculating out the life expectancy value Tau1 of the seaming part of the thin film when the reflection rate becomes 1/e, and a fourth step of evaluating the quality of the target assembly based on the life expectancy value Tau1 of the seaming part.
Description
Technical field
The method that the bright quality that relates to the target assembly that the semiconductor layer of thin-film transistor (TFT) is used with the formation of film of this granting is evaluated.Specifically, relate to when the quality of above-mentioned target assembly (using this target assembly whether can form the quality as the useful film of the semiconductor layer of TFT) is evaluated, even if unactual use sputtering target utilizes sputtering method that this film is made into and is located at the TFT of semiconductor layer and specially evaluates its characteristic (degree of excursion, TFT characteristic), also can simply and accurately to the quality of target assembly, evaluate by the life-span of utilizing microwave photoconduction electric attenuation method to measure this film.
Background technology
As the semiconductor layer of TFT noncrystalline (noncrystalline) film used, except general amorphous silicon (a-Si), recently use is such as at least one the oxide that comprises indium (In), gallium (Ga), zinc (Zn), tin (Sn) etc.The latter's oxide is not only there is to the characteristic of semiconductor of the more high excellence of field-effect mobility (degree of excursion) for the oxide semiconductor thin-film of the semiconductor layer of TFT, due to can be larger with film formation at low temp and optical band gap, therefore, also having advantages of can be to plastic base, film substrate film forming etc.
In the situation that the semiconductor layer using such film as TFT is used, in order to obtain, mobility is higher, the film of TFT excellent, from the viewpoint of boosting productivity, in the manufacturing process of display etc., characteristic to the semiconductive thin film of film forming is evaluated, and by its result feedback, thereby adjust, to create conditions to carry out membranous management be very important.
Evaluation method as the characteristic of semiconductive thin film in the past, conventionally form gate insulating film, passivation dielectric film supplemantary electrode on semiconductive thin film after, the characteristic of mobility, threshold value etc. is measured, but in the assay method of contact-type that needs supplemantary electrode, cost is for time, the cost of supplemantary electrode.In addition, due to supplemantary electrode, thereby there is the possibility that produces new defect on semiconductive thin film, and from improving the viewpoint of fabrication yield, also seek not need the establishment of assay method of the non-contact type of supplemantary electrode.
In view of such situation, the application's applicant has proposed as the method for the characteristic of semiconductive thin film being evaluated with non-contact type the evaluation method (patent documentation 1 and 2) that the microwave photoconduction electric attenuation method (μ-PCD method) based on having used laser and microwave is evaluated.Wherein, patent documentation 1 is in order to propose the crystallinity evaluation of the quasi-crystalline semiconductive thin films such as polysilicon, by to having formed the test portion irradiating laser of above-mentioned quasi-crystalline semiconductive thin film, the variation of the reflectivity of microwave that the excess carrier with being encouraged by this Ear Mucosa Treated by He Ne Laser Irradiation are correspondingly changed is measured, the crystallinity of semiconductive thin film is evaluated.
In addition, patent documentation 2 is evaluate and the technology of above-mentioned patent documentation 1 is carried out to improved technology for the characteristic to amorphous oxide semiconductor thin-film, has set the illuminate condition of the exciting light that is suitable for this oxide semiconductor thin-film.Particularly, relation to the measurement result in the characteristic of oxide semiconductor thin-film and life-span is scrutinized, result draws following opinion: (a) mobility of oxide semiconductor thin-film and life value (1/e of reflectance varies) have higher dependency relation, life value can be evaluated the mobility of oxide semiconductor thin-film simply by inquiry, and (b) mobility of oxide semiconductor thin-film and the peak value of reflectivity have higher dependency relation, by replacing life value, investigate peak value, also can to the mobility of oxide semiconductor thin-film, evaluate simply.Based on these opinions, following method is disclosed in patent documentation 2: (a) to being formed with the test portion of oxide semiconductor thin-film, irradiate exciting light and microwave, detecting according to the maximum (peak value) of the reflected wave from oxide semiconductor thin-film of the microwave of the illumination variations of exciting light afterwards, stop the irradiation of exciting light, to stopping the variation of reflectivity of the reflected wave from oxide semiconductor thin-film of the postradiation microwave of exciting light, measure, according to the value determining, calculate life value (1/e of reflectance varies), thereby judge the mobility of oxide semiconductor thin-film, and (b) to being formed with test portion irradiation exciting light and the microwave of oxide semiconductor thin-film, maximum (peak value) according to the reflected wave from oxide semiconductor thin-film of the microwave of the illumination variations of exciting light is measured, thereby judge the mobility of oxide semiconductor thin-film.
On the other hand, when forming semiconductive thin film, preferably use the sputtering method that the sputtering target with this film same composition is carried out to sputter.In sputtering method, in vacuum, import the inactive gass such as Ar gas on one side to applying high voltage between substrate and target structure on one side, Ionized inactive gas and target structure are collided, the constitute of the target structure of upspringing because of this collision is piled up in and on substrate, forms film.Utilize the film that sputtering method forms to compare with the film that utilizes ion plating method, vacuum vapour deposition, electron beam evaporation plating method to form, have advantages of that the one-tenth of face direction (in face) is grouped into, the inner evenness of thickness etc. is excellent, can form and the film of sputtering target identical component composition such.
The sputtering target that sputtering method is used is generally used using bond material to be engaged under the state on the backboard (supporting mass) of metal member, and such sputtering target is also referred to as target conjugant.The Cu of the general thermal endurance of backboard, conductivity, heat conductivity excellence, is used with the form of fine copper or copper alloy.As bond material, the low melting point soldering tin material (for example material of In system, Sn system) that interchangeable heat conductibility and conductivity are good.
In recent years, utilize sputtering method to the increase that needs of large substrate film forming, the size of sputtering target also maximizes thereupon.According to sputtering target difference, also there is the situation about maximizing of being difficult to, the target assembly that therefore, as described later shown in Fig. 1, Fig. 2, uses and vacate the target structure of arranging with gap a plurality of small pieces on a backboard, utilizes bond material that target structure and backboard are engaged.Each other because thereby the deflection of backboard contacts generation defect, when adjustment is configured to room temperature between adjacent target structure, there is the roughly gap of 0.1～1.0mm for fear of adjacent target.In addition, for fear of bond material, from above-mentioned gap, spill, the lining member (also referred to as copper coin) of the banded sheet etc. of macromolecule heat-resistant sheet, conductive sheet, pure Cu or Cu alloy is conventionally also set at the dorsal part in above-mentioned gap (in conjunction with side, the side relative with backboard).
Patent documentation
Patent documentation 1: TOHKEMY 2008-191123 communique
Patent documentation 2: TOHKEMY 2012-33857 communique
When manufacturing target assembly, between a plurality of target structures, gap is set as described above, therefore in sputter, can invade ionization from this gap inactive gas.Its result, the backboard that is disposed at the Cu system under target structure is also sputtered, and while having sneaked into Cu in the semiconductive thin film forming, TFT characteristic reduces.That is, when using target assembly film forming semiconductive thin film, the gap of each target structure that the above-mentioned gap portion of take when manufacturing is corresponding is cause, produces Cu to the mixing phenomena mixing in film, causes TFT characteristic to reduce.The reduction of TFT characteristic becomes the main cause of the image inequality while making display, causes the remarkable variation of quality.When particularly not only backboard is used Cu system, lining member also to use Cu processed, the mixing phenomena of Cu is more remarkable, therefore, not preferred.
In the past, during the reduction of the TFT characteristic causing in the clearance portion of judging while being manufactured by such target assembly, if actual, with target assembly, do not form semiconductive thin film, semiconductive thin film supplemantary electrode is made to TFT can not evaluate, but after TFT, be judged to be bad in the situation that making, need again to make from the beginning target assembly, cause productivity ratio and cost significantly to reduce.
Summary of the invention
The present invention In view of the foregoing makes, its object is to provide when the quality of target assembly (use this target assembly whether can film forming as the quality of the useful film of the semiconductor layer of TFT) is evaluated, even if unactual use sputtering target utilizes sputtering method that this film is made into and is located at the TFT of semiconductor layer and specially evaluates its characteristic (mobility, TFT characteristic), also can be simply and the method for accurately quality of target assembly being evaluated.
Can realize will being intended to of method that the quality of the target assembly that the semiconductor layer of thin-film transistor is used with the formation of film of the present invention of above-mentioned problem evaluates, it comprises: the first operation, prepare target assembly, this target assembly by vacating and configure with gap a plurality of oxide target members and form by bond material on backboard; The second operation, carries out sputter and forms film described target assembly; The 3rd operation, area illumination exciting light and microwave to comprising of described film of the seam portion A corresponding with the gap of described target assembly, after the maximum of the reflected wave from described seam portion A that is measured to the described microwave changing according to the irradiation of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described seam portion A of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 1 of the described seam portion A of described film; The 4th operation, the quality of the 1 pair of target assembly of life value τ based on described seam portion A is evaluated.
In addition, realized will being intended to of another target assembly method for evaluating quality of the present invention of above-mentioned problem, it comprises: the first operation, prepare target assembly, and this target assembly by vacating and configure with gap a plurality of oxide target members and form by bond material on backboard, the second operation, carries out sputter and forms film described target assembly, the 3rd operation, area illumination exciting light and microwave to comprising of described film of the seam portion A corresponding with the gap of described target assembly, after the maximum of the reflected wave from described seam portion A that is measured to the described microwave changing according to the irradiation of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described seam portion A of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 1 of the described seam portion A of described film, the 5th operation, area illumination exciting light and microwave to comprising of described film of the non-seam portion B corresponding with the non-clearance portion of described target assembly, after the maximum of the reflected wave from described non-seam portion B that is measured to the described microwave changing according to the irradiation of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described non-seam portion B of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 2 of the described non-seam portion B of described film, the 6th operation, the ratio of the life value τ 2 of the life value τ 1 of the described seam portion A based on described film and the described non-seam portion B of described film is that the quality of 2 pairs of target assemblies of τ 1/ τ is evaluated.
In the preferred embodiment of the present invention, above-mentioned film is sull.
Invention effect
The method for evaluating quality of target assembly of the present invention is not the quality that the quality of target assembly is judged in the actual TFT of carrying out characteristic test as in the past, but by judge the quality of the quality of target assembly to utilizing the life value of the semiconductive thin film of target assembly film forming to measure.Therefore, if use method of the present invention, even if unactual use sputtering target utilizes sputtering method that this film is made into and is located at the TFT of semiconductor layer and specially evaluates its characteristic (mobility, TFT characteristic), also can simply and accurately to the quality of target assembly, evaluate.Its result, during shortening from making target assembly to quality evaluation, can go far towards the shortening of development time, the reduction of the raising of productivity ratio, cost etc.
It should be noted that, method of the present invention is useful as the method that the quality of target assembly is evaluated, but also useful as the method for evaluating quality of the film that utilizes target assembly to form (corresponding with junction surface, in film the jointed film of tool).; the method according to this invention; in the manufacturing line of liquid crystal indicator etc.; can be online at short notice to using the electrical characteristics of the semiconductive thin film of target assembly film forming to evaluate; and can carry out with cordless; therefore, can improve rate of finished products etc. and boost productivity, can be simply and suitably carry out the quality evaluation of target assembly.
Accompanying drawing explanation
Fig. 1 means the vertical view of the structure of target assembly.
Fig. 2 is that the A-A line of Fig. 1 amplifies longitudinal section.
Fig. 3 is the skeleton diagram of biometrics device.
Fig. 4 means the figure of an example of the decay waveform obtaining by biometrics.
Fig. 5 means the figure of the measurement result of the life value while using target assembly 1 in Production Example 1.
Fig. 6 means the figure of the measurement result of the life value while using target assembly 2 in Production Example 1.
Fig. 7 is the schematic diagram of the TFT component structure of use in embodiment 1.
Fig. 8 means the I that uses the TFT that target assembly 1 is made in embodiment 1
d-V
gthe figure of characteristic.
Fig. 9 means the I that uses the TFT that target assembly 2 is made in embodiment 1
d-V
gthe figure of characteristic.
Symbol description
1: pulse laser (light source of exciting light); 2: microwave oscillator; 3: directivity colligator; 4: magic T (magic T); 5a: first wave conduit (signal waveguide); 5b: Second Wave conduit (reference waveguide); 6: frequency mixer; 7: signal processing apparatus; 8: computer; 9: workbench controller; 10: test portion platform; 11:X-Y workbench; 12: substrate maintaining part; 13: speculum; 14: collector lens; 20: test portion substrate; 20a: film test portion; 20b: substrate; 21: target assembly; 22: sputtering target; 23: backboard; 24a～24d: oxide target member; 25: lining member; 31a, 31b, 31c: low melting point scolding tin bond material; 32: separator; T: gap; Q: part under the T of gap.
Embodiment
The inventor be take the microwave photoconduction electric attenuation methods that patent documentation 1 and 2 records and is studied as basis when simply the quality of target assembly being evaluated.Utilize the mobility of the semiconductive thin film of life value (1/e of reflectance varies) that the method for patent documentation 2 calculates and oxide semiconductor thin-film etc. to there is good dependency relation, become for TFT characteristic is evaluated indirectly and the good index of precision.On the other hand, in target assembly, the clearance portion while take as described above this target assembly manufacture is cause, and larger variation occurs TFT characteristic, therefore the life value that, the inventor is conceived to the seam portion of the film corresponding with the clearance portion of target assembly is studied.Its result, the mobility of the semiconductive thin film of the life value (τ 1) of having found the seam portion of the film corresponding with the clearance portion of target assembly and oxide semiconductor thin-film etc. and SS (Subthreshold Swing, subthreshold swing, drain current improve 1 required grid voltage) value, I
d-V
gthe TFT characteristics such as characteristic have good dependency relation, become the indirect and good index for TFT characteristic is evaluated.And, find the film corresponding with the clearance portion of target assembly seam portion life value (τ 1) and also there is good dependency relation with TFT characteristics such as the mobility of the semiconductive thin film of oxide semiconductor thin-film etc. and SS values with the ratio (τ 1/ τ 2) of the life value (τ 2) of the non-seam portion of the corresponding film of the non-clearance portion of target assembly, if use above-mentioned ratio, no matter have advantages of how the material of formation target assembly can be evaluated, thereby completed the present invention.
Like this, characteristic of the present invention is according to the life value (τ 1) of the seam portion of the film corresponding with the gap of target assembly, the quality of target assembly to be evaluated.This is documented the calculation method of life value in patent documentation 2, can reference, but in patent documentation 2, the record about target assembly does not have completely, and above-mentioned characteristic is not recorded in patent documentation 2 yet.Particularly, recommend the ratio (τ 1/ τ 2) of the life value (τ 2) of the non-seam portion of above-mentioned life value (τ 1) and the film corresponding with the non-clearance portion of target assembly as the index use for target assembly quality evaluation.
That is, the method for evaluating quality of target assembly of the present invention is characterised in that and comprises: the first operation, prepare target assembly, and this target assembly by vacating and configure with gap a plurality of oxide target members and form by bond material on backboard; The second operation, carries out sputter and forms film described target assembly; The 3rd operation, area illumination exciting light and microwave to comprising of described film of the seam portion A corresponding with the gap of described target assembly, after the maximum of the reflected wave from described seam portion A that is measured to the described microwave changing according to the irradiation of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described seam portion A of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 1 of the described seam portion A of described film; The 4th operation, evaluates (the first execution mode) according to the quality of 1 pair of target assembly of life value τ of described seam portion A.
Above-mentioned defining according to the life value (τ 1) of the seam portion of the film corresponding with the junction surface of target assembly evaluated such characteristic of the present invention to the quality of target assembly, and particularly using the ratio (τ 1/ τ 2) of life value (τ 2) of the non-seam portion of the life value (τ 1) of calculating based on above-mentioned the 3rd operation and the film corresponding with the non-clearance portion of target assembly is effective as its index.At this, above-mentioned life value τ 2 can calculate by the 5th operation, the 5th operation is: area illumination exciting light and microwave to comprising of described film of the non-seam portion B corresponding with the non-clearance portion of described target assembly, after being measured to according to the maximum of the reflected wave from described non-seam portion B of the described microwave of the illumination variations of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described non-seam portion B of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 2 (the second execution mode) of the described non-seam portion B of described film.
If as above-mentioned the second execution mode useful life value ratio, no matter how material can be evaluated the quality of target assembly.; as above-mentioned the first execution mode only in the method for the life value τ 1 based on seam portion A; different according to material; conventionally the value of τ 1 diminishes or becomes on the contrary large, therefore must study in advance the threshold value as qualified benchmark by material, on the other hand; if use above-mentioned ratio; the index that can obtain the impact of the clearance portion that represents target, therefore, does not need the threshold value as qualified benchmark by investigation of materials.
Below, with reference to accompanying drawing, explain each operation of method for evaluating quality of the target assembly of first and second execution mode of the present invention.Fig. 1 is in the present invention the vertical view of target assembly used, and Fig. 2 is that the A-A line of Fig. 1 amplifies longitudinal section.But the target assembly of Fig. 1 and Fig. 2 is an example preferred embodiment of the present invention, the present invention is never defined in this.For example, in following figure, represent OBL sputtering target, but be not limited to this, for example, also can use discoid sputtering target.In addition, below use sull explanation, but be not limited to this, for example, also can use amorphous silicon membrane.
(1) about the first execution mode
(the first operation)
First, as shown in Figures 1 and 2, prepare on backboard 23 to vacate gap T and configure by bond material 31a～31c the target assembly 21 of a plurality of oxide target member 24a～24d.Target assembly 21 shown in Fig. 1 and Fig. 2 comprises: by 4 target structure 24a～24d along respectively arranging two and the sputtering target 22 that forms all around, for the backboard 23 of fixing (supporting) this sputtering target 22 and low melting point scolding tin bond material 31a～31c that a plurality of target structure 24a～24d are engaged with backboard 3.Dorsal part (low melting point scolding tin bond material 31a side) at the gap T of adjacent a plurality of target structure 24a～24d is provided with lining member 25 to stop up the mode of gap T.Between target structure 24a～24d and backboard 23 can form the mode configuration isolation part 32 (Cu line) in uniform gap.
As target structure 24a～24d, such as enumerating silicon class and the oxides such as amorphous silicon, polysilicon.Preferred target structure is amorphous material.The thickness of above-mentioned film is preferably roughly tens nm～100nm left and right.
As above-mentioned oxide, so long as the semiconductor layer of TFT is conventionally used, be not particularly limited the amorphous oxide semiconductor that for example uses combination more than at least one that select to form in the group from being formed by In, Ga, Zn and Sn.Particularly, for example enumerate In oxide, In-Sn oxide, In-Zn oxide, In-Sn-Zn oxide, In-Ga oxide, Zn-Ga oxide, In-Ga-Zn oxide, Zn oxide.The ratio of each element is suitably determined according to the composition of the sull in the upper film forming of substrate (not shown in Fig. 1, Fig. 2).
Between target structure 24a～24d, vacating gap T configures.The width of gap T is preferably suitably set according to target structure, the size of low melting point scolding tin bond material 31a～31c and the size of backboard 23 etc. used, is preferably roughly 0.2mm～1.0mm.
In Fig. 1 and Fig. 2, target structure 24a～24d consists of rectangular sheet material, but is not limited to this, can be also conventionally shape (for example discoid) used.In addition, thickness, the size of target structure 24a～24d are also not particularly limited, and can be chosen in normally used thickness, size in the field of target assembly.
As low melting point scolding tin bond material 31a～31c, enumerate typically In sill or Sn sill.Its kind is not particularly limited, so long as normally used in the field of sputtering target, can use.As In sill, such as enumerating In-Ag alloy etc.As Sn sill, such as enumerating Sn-Zn alloy etc.In sill preferably.In Fig. 2, symbol 31a～31c can be used identical or different low melting point scolding tin bond material, but while considering operating efficiency etc., preferably uses identical material.
Gap for fear of bond material from each target structure spills, and lining member 25 is located at the dorsal part (in conjunction with side, a side relative with backboard) of gap T.As lining member 25, conductivity, heat conductivity excellence, can be used normally used member in the field of sputtering target.Specifically, as shown in Figure 2, lining member 25 engages by low melting point scolding tin bond material 31b with backboard 23, and lining member 25 engages by low melting point scolding tin bond material 31a with oxide target member 24a, 24b.Part Q under the T of gap, low melting point scolding tin bond material 21 is clawed and is not existed, therefore, lining member 25 not via low melting point scolding tin bond material 31a directly engage with target structure 24a, 24b.
But in the present invention, at least, at the dorsal part configuration lining member of gap T, the existence form of lining member is not limited to the form of Fig. 2.In addition, preferably there is not low melting point scolding tin bond material 31a in part Q under the T of gap as illustrated in fig. 2, this be due to: when Q partly exists low melting point scolding tin bond material, in sputter, can be heated, bond material stripping and produce paradoxical discharge, produces particulate, splash.When particularly bond material rises gradually along gap, such phenomenon becomes significantly, and therefore, for fear of this phenomenon, under being preferably in, part Q does not exist bond material as far as possible.
(the second operation)
Then, above-mentioned target assembly is carried out sputter and forms film.Sputtering condition is not particularly limited, and in order to form the film of expectation, selects suitable condition.
(the 3rd operation)
Then, area illumination exciting light and microwave to comprising of above-mentioned film of the seam portion A corresponding with the gap of target assembly, after being measured to according to the maximum of the reflected wave from described seam portion A of the described microwave of the illumination variations of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described seam portion A of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 1 of the described seam portion A of described film.The invention is characterized in, to comprising area illumination exciting light and the microwave of the seam portion A corresponding with the gap of target assembly, calculate the life value τ 1 of the seam portion A of film, the detailed computational methods of life value τ 1 are recorded in patent documentation 1, can be with reference to patent documentation 1, therefore, in this manual, omit the explanation of detailed assay method, its summary is (following Fig. 3 and Fig. 4 are the figure extracting out from patent documentation 2) as described below.
Particularly, use the biometrics device (Fig. 1 recording with patent documentation 2 is identical) that Fig. 3 records to irradiate exciting light and microwave to the mensuration position of test portion (semiconductive thin film) 20a, detect according to the reflection intensity of wave from test portion of the microwave of the illumination variations of this exciting light.The determinator of Fig. 3 possesses: pulse laser 1, microwave oscillator 2, directivity colligator 3, magic T (4), first wave conduit (signal waveguide) 5a, Second Wave conduit (reference waveguide) 5b, frequency mixer 6, signal processing apparatus 7, computer 8, workbench controller 9, test portion platform 10, X-Y workbench 11, substrate maintaining part 12, speculum 13 and collector lens 14 etc.
From the exciting light of pulse laser 1 output, be reflected mirror 13 reflections and assembled by collector lens 14 (optically focused parts), by being located at the minute opening 5c of first wave conduit 5a, and irradiate the mensuration position (for example point of diameter 5～10 μ m left and right) in film test portion 20a by this first wave conduit 5a with the approaching end (peristome) of film test portion 20a.Like this, speculum 13 and collector lens 14 will be assembled and guide to film test portion 20a from the exciting light of pulse laser 1 output.Thus, the small exciting light irradiation area (mensuration position) at film test portion 20a produces stimulated carrier.
As mentioned above, the carrier mobility of the crystalloid semiconductive thin film of oxide etc. and life value, charge carrier peak value (peak value of=reflectivity) have dependency relation, therefore, by calculating life value, peak value, can to the carrier mobility of oxide semiconductor thin-film, evaluate judgement simply.
Fig. 4 (Fig. 2 recording with patent documentation 2 is identical) means the figure (curve represents carrier density) of situation of variation of the excess carrier density of microwave photoconduction electric attenuation method.The exciting light oxide semiconductive thin film that oxide semiconductor thin-film test portion is irradiated absorbs and generation excess carrier (stimulated carrier), along with excess carrier density increases its disappearance speed, increase, when carrier injection speed is equal with disappearance speed, excess carrier density becomes constant peak value.And, saturated and maintain constant value when the generation of these excess carrier and the speed of disappearance equate, when stopping the irradiation of exciting light, due to excess carrier again in conjunction with, disappear, excess carrier reduce, and finally return to the value of irradiating before exciting light.
In the present invention, as said determination position, use the region of the seam portion A that comprises the film corresponding with the gap of target assembly.Gap between the target structure of the gap of target assembly when manufacturing is corresponding, roughly has the width of 0.3～1.0mm.The width of the seam portion A of the film corresponding with above-mentioned gap is roughly 3.5～18.0mm, recommendation comprise this seam portion A in the region of interior roughly 50.0mm * 20.0mm～100.0mm * 60.0mm as measuring position.
In addition, carry out immediately after can similarly forming semiconductive thin film on substrate with patent documentation 2 period of the life value τ 1 of the seam portion A of mensuration film, also can utilize for example oxygen, steam to carry out after above-mentioned semiconductive thin film is heat-treated, or can before forming passivation dielectric film, carry out, can after each operation, measure.But, consider the evaluation of the target self except the impact of technique and shortening until the time of evaluating, be recommended in after forming semiconductive thin film and measure immediately life value τ 1.In addition, by measuring a plurality of points on base material, also can measure in the face of oxide semiconductor thin-film and distribute.
(the 4th operation)
Then, the quality of 1 pair of target assembly of life value τ of the seam portion A of based thin film is evaluated.The mobility that exist the life value τ 1 of seam portion A larger, to possess the TFT that uses the film that above-mentioned target assembly obtains is higher tendency also, therefore the threshold value (correspondingly changing with target material) that, for example whether surpasses regulation by τ 1 can be judged the quality of the quality of each target.
(2) about the second execution mode
In the first above-mentioned execution mode, the method that the quality of 1 pair of target assembly of life value τ of the seam portion A of based thin film is evaluated has been described, but as recorded in the second execution mode, the ratio of the life value τ 2 of the life value τ 1 of the seam portion A of based thin film and the non-seam portion B of film (τ 1/ τ 2) also can be evaluated the quality of target assembly.In the second execution mode, the first～three operation is identical with the first execution mode, therefore, the 5th operation and the 6th operation is below described.
(the 5th operation)
At this, use the region of the non-seam portion B comprise the film corresponding with the non-clearance portion of target assembly as measuring region, similarly calculate the life value τ 2 of the non-seam portion B of film with the 3rd operation.
At this, the non-clearance portion of target assembly refers to the region beyond the gap T of target assembly, the region of the non-seam portion B that comprises the film corresponding with above-mentioned non-clearance portion, particularly refers to the substantial middle of the part except seam, the part of approximate distance seam portion 20mm.
In addition, the period of the life value τ 2 of the non-seam portion B of mensuration film is identical with the situation of aforesaid life value τ 1, can form semiconductive thin film on substrate after, carry out immediately, also can utilize for example oxygen, steam to carry out after above-mentioned semiconductive thin film is heat-treated, or also can before forming passivation dielectric film, carry out, can after each operation, measure.But, consider the evaluation of the target self except the impact of technique and shortening until the time of evaluating, be recommended in after forming semiconductive thin film and measure immediately life value τ 2.
(the 6th operation)
Life value τ 1 based on via above-mentioned the 3rd operation seam portion A that calculate, film and the quality of target assembly being evaluated via the ratio (τ 1/ τ 2) of the life value τ 2 of above-mentioned the 5th operation non-seam portion B that calculate, film.For example, this is 1 to refer to that the clearance portion of target does not have baneful influence completely than (τ 1/ τ 2), and this is than larger for refer to the baneful influence of clearance portion of target than 1 little a lot of value.By using above-mentioned ratio, the impact that target material produces is excluded, therefore, utilize this than the value threshold value (not relying on target material) that whether surpasses regulation can judge the quality of the quality of target assembly.
Method of the present invention relates to the method that the quality of target assembly is evaluated, but also useful as the method for evaluating quality of the film that formed by above-mentioned target assembly (corresponding with the gap between target structure, film in the jointed film of tool).Therefore, by method of the present invention is applied to form arbitrary operation of the manufacturing process after semiconductive thin film on substrate, the characteristic of the semiconductive thin film being formed by target assembly is evaluated, and by its result feedback, thereby adjusting creates conditions, can carry out membranous evaluation, therefore, can suitably carry out the quality evaluation of semiconductive thin film.
Embodiment
Below, exemplify embodiment and be described more specifically the present invention, but the present invention is not limited by following embodiment certainly, certainly also can in the scope that can be applicable to aforementioned purport described later, suitably apply change and implement, they are all contained in technical scope of the present invention.
First, manufacture as described below target assembly 1～6, to using the life value of the oxide semiconductor thin-film of the target formation manufacturing to measure.
(manufacture of target assembly 1)
Target assembly 1 (not processing) is manufactured as described below.First, fill the bond material of In sill on backboard, being heated to fusing point becomes molten condition above.Then, vacate a plurality of oxide target members of alignment arrangements with gap together with separator, and carry out cooling.Target consists of InGaZnO
4(In: Ga: Zn=1: 1: 1, atom % ratio).Gap between target structure is 0.8mm.Do not use lining member.
(manufacture of target assembly 2)
Gap between target structure is, this point of 0mm (gapless), similarly to manufacture target assembly 2 with target assembly 1.
(manufacture of target assembly 3)
Except the target structure of the chamfering about 1mm is carried out the angle of pushing up top in use, similarly manufacture target assembly 3 with target assembly 1.
(manufacture of target assembly 4)
Target assembly 4 is manufactured as described below.First, fill the bond material of In sill on backboard, being heated to fusing point becomes molten condition above.Then,, after the lining member that configuration consists of separator and pure Cu, vacate a plurality of oxide target members of alignment arrangements with gap thereon, and carry out cooling.Target consists of InGaZnO
4(In: Ga: Zn=1: 1: 1, atom % ratio).Lining member be disposed at and target structure between suitable position, gap.Gap between target structure is 0.5mm.
(manufacture of target assembly 5)
Except using the lining member that formed by polyimide film (Kapton), gap between target structure, be 0.6mm, similarly manufacture target assembly 5 with target assembly 4.
(manufacture of target assembly 6)
Except using the lining member formed by Ni, gap between target structure, be 0.3mm, similarly manufacture target assembly 6 with target assembly 4.
(mensuration of film forming and life value)
Upper at glass substrate (EAGLEXG processed of Corning Incorporated, diameter 100mm * thickness 0.7mm), the target assembly 1～6 that use table 1 is recorded utilizes sputtering film-forming oxide semiconductor thin-film [IGZO (In: Ga: Zn: O (atom % ratio)=1: 1: 1: 4))] (thickness: 200nm) under following sputtering condition.
Substrate temperature: room temperature
Partial pressure of oxygen: O
2/ (Ar+O
2)=4%
After forming oxide semiconductor thin-film as described above, membranous in order to improve, at steam atmosphere (H
2o/O
2=50%) preannealing carrying out at 350 ℃ in 1 hour is processed.After preannealing is processed, use under the following conditions device (the Japanese kobe steel section development: LAT-1820SP) utilize microwave photoconduction electric attenuation method to measure the variation of reflectivity, measure the life value τ 1 of seam portion of film and the life value τ 2 of the non-seam portion of film with the structure shown in Fig. 3.
Optical maser wavelength: 349nm (ultraviolet light)
Pulse duration: 15ns
Pulse energy: 1 μ J/pulse
Beam diameter:
Umber of pulse=64 pulse of measuring for 1 time
Particularly, for the line (near the position from the high order end of substrate 100mm) of the non-seam portion of the seam portion that comprises film and film, measure life value, measure the seam portion X of film
1life value τ 1 and the non-seam portion X of film
2(apart from seam portion X
1enough points far away) life value τ 2, calculates their ratio (τ 1/ τ 2).At this, each life value is measured immediately after preannealing.
The above results is shown in Table 1.
Table 1
Result when Fig. 5 and Fig. 6 represent measure to use target assembly 1 and target assembly 2, during the life value from the high order end of substrate to assigned position, for your guidance.X in figure
1the seam portion of film, X
2it is the non-seam portion of film.It should be noted that, in Fig. 5 (using target assembly 1), X
1=43mm, X
2=77mm.In Fig. 6 (using target assembly 2), X
1=41mm, X
2=58mm.Each of target assembly beyond above-mentioned is worth as shown below, for your guidance.
Target assembly 3:X
1=27, X
2=6
Target assembly 4:X
1=33, X
2=6
Target assembly 5:X
1=31, X
2=8
Target assembly 6:X
1=40, X
2=4
Known according to the above results, the quality of the target assembly 1 that the value of τ 1 or τ 1/ τ 2 is less is bad, and target assembly 2～6, the particularly quality of target assembly 2,6 that the value of τ 1 or τ 1/ τ 2 is larger are better.
(mensuration of TFT characteristic)
Then, whether appropriate in order to verify above-mentioned evaluation, when using aforesaid target assembly 1,2 and 6 TFT that construction drawing 7 is recorded as described below, transistor characteristic, mobility and SS value measure.
First, on glass substrate (the EAGLE XG processed of Corning Incorporated, diameter 100mm * thickness 0.7mm) successively film forming as Mo film 100nm and the gate insulating film SiO of gate electrode
2(200nm).Gate electrode is used the sputtering target of pure Mo to utilize DC sputtering method at film-forming temperature: film forming under the condition of room temperature, film forming power: 300W, carrier gases: Ar, gas pressure: 2mTorr.In addition, gate insulating film is used plasma CVD method at carrier gases: SiH
4and N
2the mist of O, film forming power: 100W, film-forming temperature: film forming under the condition of 300 ℃.
Then, similarly form sull (thickness 40nm) with aforesaid Production Example.
After forming oxide semiconductor thin-film as described above, utilize photoetching process and Wet-type etching to carry out pattern formation.As Wet-type etching liquid, use Northeast chemistry system " ITO-07N ".
After oxide semiconductor thin-film having been carried out to pattern formation, membranous in order to improve, carry out preannealing processing.Preannealing carries out 1 hour in steam atmosphere at 350 ℃.In addition, the etch stop (100nm) of the oxide semiconductor thin-film while utilizing plasma CVD method film forming for the protection of source-drain electrode etching described later, carries out pattern formation by dry-etching.The condition of plasma CVD method is to form SiO
2during film, use N
2o and SiH
4mist.Film forming power is 100W, and film-forming temperature is 230 ℃, and the condition of dry-etching is to use Ar, CHF
3mist, pressure is 6Pa, power is 150W.
Then, use pure Mo to form source-drain electrode.Particularly, with aforesaid gate electrode same utilize the pure Mo film of DC sputtering film-forming (thickness 100nm) afterwards, utilize photoetching process and Wet-type etching to carry out pattern formation.Wet-type etching liquid is " AC101 ", and with respect to etchant stoste 1, the pure water of the ratio with 0.75 dilutes.In liquid temperature, be under room temperature, to have carried out etching.The passage length of TFT is 10 μ m, and channel width is 25 μ m.In order to carry out reliably pattern formation, to prevent short circuit, with respect to the thickness of source-drain electrode, be equivalent to append dipping (excessive erosion) in above-mentioned Wet-type etching liquid (AC101) in time of 20%.
After so forming source-drain electrode, be formed for protecting the diaphragm of oxide semiconductor.As diaphragm, use SiO
2the stacked film of (thickness 200nm) and SiN (thickness 150nm) (adding up to thickness 250nm).Above-mentioned SiO
2and the formation of SiN is used Pehanorm agree system " PD-220NL " and use plasma CVD method to carry out.In the present embodiment, utilize N
2after O gas carries out plasma treatment, form successively SiO
2and SiN film.Forming SiO
2during film, use N
2o and SiH
4mist, when forming SiN film, use SiH
4, N
2, NH
3mist.Film forming power is 100W, and film-forming temperature is 150 ℃.
Then, utilize photoetching process and dry-etching on diaphragm, to be formed for transistor characteristic evaluation and be made into TFT with the contact hole of check.
About each TFT of acquisition like this, obtain as described below transistor characteristic (drain current-grid voltage characteristic, I
d-V
gcharacteristic), SS value and mobility (field-effect mobility μ FE).It should be noted that, for target assembly 1,2, carry out the mensuration of transistor characteristic.
(1) mensuration of transistor characteristic
Transistor characteristic (I
d-V
gcharacteristic) use the semiconductor parameter analyzer of National Instruments company's system " 4156C ".Detailed condition determination as shown below.
Source voltage: 0V
Drain voltage: 10V
Grid voltage :-30V～30V (measuring interval: 1V)
(2) SS value
The minimum value that makes drain current increase a required grid voltage is SS value.
(3) mobility [mu] FE
Field-effect mobility μ FE according to TFT characteristic at V
g> V
d-V
thlinear areas derive.In linear areas, V
g, V
dbe respectively grid voltage, drain voltage, V
thvoltage while surpassing 1nA for drain current, I
dfor drain current, L, W are respectively passage length, the channel width of TFT element, the static capacity that Ci is gate insulating film, and μ FE is field-effect mobility.μ FE derives from following formula.In the present embodiment, according near the drain current-grid voltage characteristic (I meeting the grid voltage of linear areas
d-V
gcharacteristic) tendency derives field-effect mobility μ FE.
Formula 1
The above results is shown in table 2 and Fig. 8 and Fig. 9.
Table 2
The TFT that the less target assembly 1 of value of use τ 1 and τ 1/ τ 2 is made into is transistor characteristic variation as shown in Figure 8, and mobility as shown in table 2 also reduces, and SS value also uprises.
On the other hand, use the TFT that sputtering target 2,6 is made into of cutting apart that the value of τ 1 and τ 1/ τ 2 is larger to show as shown in Figure 9 good transistor characteristic, as shown in table 2, mobility is also higher, and SS value is also lower.
Known according to above result, by utilizing microwave photoconduction electric attenuation method to measure the life value of film, can simply and accurately to the quality of target assembly, judge evaluation.
Claims (3)
1. a method for evaluating quality for target assembly, the quality of the target assembly that the method is used with the formation of film the semiconductor layer of thin-film transistor is evaluated, and it is characterized in that, comprising:
The first operation, prepares target assembly, and this target assembly by vacating and configure with gap a plurality of oxide target members and form by bond material on backboard;
The second operation, carries out sputter and forms film described target assembly;
The 3rd operation, area illumination exciting light and microwave to comprising of described film of the seam portion corresponding with the gap of described target assembly (A), after the maximum of the reflected wave from described seam portion (A) that is measured to the described microwave changing according to the irradiation of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described seam portion (A) of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 1 of the described seam portion (A) of described film,
The 4th operation, the quality of the 1 pair of target assembly of life value τ based on described seam portion (A) is evaluated.
2. a method for evaluating quality for target assembly, the quality of the target assembly that the method is used with the formation of film the semiconductor layer of thin-film transistor is evaluated, and it is characterized in that, comprising:
The first operation, prepares target assembly, and this target assembly by vacating and configure with gap a plurality of oxide target members and form by bond material on backboard;
The second operation, carries out sputter and forms film described target assembly;
The 3rd operation, area illumination exciting light and microwave to comprising of described film of the seam portion corresponding with the gap of described target assembly (A), after the maximum of the reflected wave from described seam portion (A) that is measured to the described microwave changing according to the irradiation of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described seam portion (A) of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 1 of the described seam portion (A) of described film,
The 5th operation, area illumination exciting light and microwave to comprising of described film of the non-seam portion (B) corresponding with the non-clearance portion of described target assembly, after the maximum of the reflected wave from described non-seam portion (B) that is measured to the described microwave changing according to the irradiation of described exciting light, stop the irradiation of described exciting light, to stopping the variation of reflectivity of the reflected wave from described non-seam portion (B) of the postradiation described microwave of described exciting light, measure, calculate until reflectivity becomes the time of 1/e as the life value τ 2 of the described non-seam portion (B) of described film,
The 6th operation, the ratio of the life value τ 2 of the life value τ 1 of the described seam portion (A) based on described film and the described non-seam portion (B) of described film is that the quality of 2 pairs of target assemblies of τ 1/ τ is evaluated.
3. the method for evaluating quality of target assembly according to claim 1 and 2, is characterized in that,
Described film is sull.
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|---|---|---|---|
| JP2012-162138 | 2012-07-20 | ||
| JP2012162138A JP5759425B2 (en) | 2012-07-20 | 2012-07-20 | Quality evaluation method of target assembly used for forming thin film for semiconductor layer of thin film transistor |
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| CN103579036B CN103579036B (en) | 2016-02-17 |
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| Country | Link |
|---|---|
| JP (1) | JP5759425B2 (en) |
| KR (1) | KR101493163B1 (en) |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154836A (en) * | 2015-09-18 | 2015-12-16 | 有研亿金新材料有限公司 | High-performance ferromagnetic sputtering target material |
| CN106884147A (en) * | 2017-03-22 | 2017-06-23 | 中山市博顿光电科技有限公司 | A kind of utilization rate ion gun sputtering target device high and its application method |
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| JP6204036B2 (en) | 2012-03-16 | 2017-09-27 | 株式会社神戸製鋼所 | Evaluation method of oxide semiconductor thin film and quality control method of oxide semiconductor thin film |
| JP6152348B2 (en) | 2013-01-11 | 2017-06-21 | 株式会社神戸製鋼所 | Evaluation method of oxide semiconductor thin film and quality control method of oxide semiconductor thin film |
| JP2016066788A (en) | 2014-09-19 | 2016-04-28 | 株式会社半導体エネルギー研究所 | Method of evaluating semiconductor film, and method of manufacturing semiconductor device |
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| KR970053899A (en) * | 1995-12-29 | 1997-07-31 | 김주용 | CMOS thin film transistor and its manufacturing method |
| JP2005038996A (en) | 2003-07-18 | 2005-02-10 | Toshiba Corp | Method of manufacturing semiconductor device |
| US10745795B2 (en) * | 2008-04-29 | 2020-08-18 | Agency For Science, Technology And Research | Inorganic graded barrier film and methods for their manufacture |
| US8894458B2 (en) * | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
| JP5814558B2 (en) * | 2010-06-30 | 2015-11-17 | 株式会社神戸製鋼所 | Evaluation method of oxide semiconductor thin film and quality control method of oxide semiconductor thin film |
| JP4961514B1 (en) * | 2010-11-08 | 2012-06-27 | 三井金属鉱業株式会社 | Split sputtering target and manufacturing method thereof |
-
2012
- 2012-07-20 JP JP2012162138A patent/JP5759425B2/en not_active Expired - Fee Related
-
2013
- 2013-07-17 CN CN201310300303.0A patent/CN103579036B/en not_active Expired - Fee Related
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| JP2008191123A (en) * | 2007-02-08 | 2008-08-21 | Kobe Steel Ltd | Crystallinity measuring instrument for thin film semiconductor, and method therefor |
| CN101681928A (en) * | 2007-05-31 | 2010-03-24 | 佳能株式会社 | Manufacturing method of thin film transistor using oxide semiconductor |
| CN102313849A (en) * | 2010-06-30 | 2012-01-11 | 株式会社神户制钢所 | The evaluation method of oxide semiconductor thin-film and the method for quality control of oxide semiconductor thin-film |
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| Publication number | Publication date |
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| KR20140012602A (en) | 2014-02-03 |
| TWI476393B (en) | 2015-03-11 |
| JP2014019931A (en) | 2014-02-03 |
| KR101493163B1 (en) | 2015-02-12 |
| TW201409015A (en) | 2014-03-01 |
| CN103579036B (en) | 2016-02-17 |
| JP5759425B2 (en) | 2015-08-05 |
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