CN103943755B - A kind of White-light LED package structure and method for packing - Google Patents
A kind of White-light LED package structure and method for packing Download PDFInfo
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- CN103943755B CN103943755B CN201410105225.3A CN201410105225A CN103943755B CN 103943755 B CN103943755 B CN 103943755B CN 201410105225 A CN201410105225 A CN 201410105225A CN 103943755 B CN103943755 B CN 103943755B
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- light led
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000012856 packing Methods 0.000 title claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 35
- 238000010030 laminating Methods 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims description 20
- 239000000428 dust Substances 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 239000002223 garnet Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000000741 silica gel Substances 0.000 description 15
- 229910002027 silica gel Inorganic materials 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 239000003292 glue Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 238000009877 rendering Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of White-light LED package structure and method for packing, fluorescence chip is fitted on blue chip by the laminating layer for the red fluorescence powder that adulterates, technique is simple, resulting LED component fluorescence efficiency is high, color developing is adjustable.
Description
Technical field
Field, more particularly to a kind of White-light LED package structure and method for packing are manufactured the present invention relates to LED.
Background technology
LED is a kind of semiconductor devices of solid-state, and electric energy directly can be converted into luminous energy by it.With traditional incandescent lamp,
Fluorescent lamp is compared, white light LEDs have the advantages that power consumption is small, luminous efficiency is high, service life length, energy-conserving and environment-protective, therefore it is not
Only it is widely used in normal lighting field, and enters field of display devices.At present, the technology for obtaining white light LEDs can
To be divided into two major classes, i.e.,：(1) using three kinds of LED chips mixing of transmitting red, green, blue coloured light line；(2) using it is monochromatic (blue light or
It is ultraviolet) LED chip excites appropriate fluorescent material.Current white light LEDs mainly use blue-light LED chip and can be effective by blue light
Fluorescent material Ce excite, Yellow light-emitting low temperature：YAG is combined, and recycles lens principle to be mixed complementary gold-tinted and blue light, so that
Obtain white light.
The LED of conventional fluorescent powder encapsulation has the following disadvantages：Fluorescent material launching efficiency and light conversion efficiency are low；Uniformity
Difference；Light decay is big；Physical and chemical performance is poor, is not suitable with white light LEDs growth requirement from now on.It is brilliant using fluorescence in addition to conventional fluorescent powder LED
The novel white-light LED of piece also begins to occur, but uses the more difficult control of colour temperature and development index of the white light LEDs of fluorescence chip merely
System, and be difficult to carry out color developing regulation by other light-emitting elements of crystal doping.
The content of the invention
A kind of technique of the technical problem to be solved in the present invention offer is simple, luminous efficiency is high and the adjustable LED of color developing
Device, is fitted fluorescence chip and blue-light LED chip using the laminating layer for being mixed with red light fluorescent powder, forms a kind of interlayer knot
The white light LED part of structure.The white light LED part has high fluorescence efficiency and the device of good development properties, wherein glass gluing
Part is adapted to work at high temperature.
The present invention provides a kind of White-light LED package structure, and the encapsulating structure includes LED blue chips, laminating layer and led to
Cross the fluorescence chip that laminating layer is fitted on LED blue chips, the laminating layer doping red fluorescence powder.
It is preferred that, the laminating layer is one kind in silica gel, glue or glass.
It is preferred that, the fluorescence chip is sheet, strip or lens arrangement.
It is preferred that, the fluorescence chip is Garnet monocrystalline or polycrystalline fluorescent material.
To solve the above problems, the present invention also provides a kind of method for packing of White-light LED package structure, including following step
Suddenly：
(1) make fluorescence chip, fluorescence chip principal component be rear-earth-doped YAG, wherein fluorescence chip can by czochralski method,
Temperature gradient method or kyropoulos are obtained, then cleaved, and grinding and polishing light obtains various corresponding sizes, and chip can be also processed into respectively
Plant shape, such as sheet, column, strip or various lens arrangements.
(2) red fluorescence powder is dispersed in silica gel or organic glue, it is well mixed to be used as plastering agent；
(3) fluorescence chip is fitted in LED chip using the plastering agent in step (2), be baked under 80-150 degree
Shape.
It is preferred that, it is 0.01%-5% that the red fluorescence powder, which accounts for silica gel or the percentage by weight of organic glue,.
Red fluorescence powder, can also be blended in glass powder with low melting point by a kind of method for packing of White-light LED package structure,
Glass dust after mixing is covered on blue chip, then fluorescence chip is pressed on glass dust, is melted at a temperature of 400 DEG C.
It is preferred that, the melting range of the glass powder with low melting point is 390-410 DEG C.
It is preferred that, the percentage by weight that the red fluorescence powder accounts for glass dust is 0.01%-5%.
Using White-light LED package structure made from the inventive method, compared with prior art, have the advantages that：
1) cost is low.Red light fluorescent powder is directly added into laminating layer, technical process is simple.
2) light efficiency is high, and color developing effect is good.Conventional fluorescent powder inner transparent degree is not high, blue light by when have certain loss,
And conventional fluorescent powder is mixed with rouge and powder and yellowish green powder simultaneously, and rouge and powder has certain absorption to green-yellow light, so that it is overall to reduce device
Luminous efficiency.The bottom of this structure devices is blue chip, and some blue light by rouge and powder during laminating layer by being absorbed into institute
The feux rouges needed, this part feux rouges can be directed through fluorescent crystal, and remaining blue light enters fluorescence wafer backside point and is converted into Huang again
Green glow, most the light compositing white light of different colours at last.The color developing of white light can be by the rouge and powder content and glimmering of adjusting adhesive layer
The parameter of light chip is conveniently obtained.Because feux rouges can be directed through in fluorescence chip without absorption, light loss can be effectively reduced, together
When reduce rouge and powder consumption.
3) good heat dissipation.For the device of large power white light LED, especially operating temperature more than 250 degree, common silica gel without
Method is born.And use the low-melting glass laminating layer for the red fluorescent material that adulterates that there is good heat endurance and thermal conductivity, low melting point
The white light LEDs of the fluorescence chip of glass gluing have in terms of high power white light illumination and had great advantage.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention
The energy distribution curve contrast for the white light LEDs that recombined white light LED component is fitted with common wafer in Fig. 2 embodiments 1
Figure
In figure, 1, fluorescence chip；2nd, laminating layer；3rd, blue chip；4th, the Energy distribution of the white light LEDs of common wafer laminating
Curve；5th, in embodiment 1 recombined white light LED component energy distribution curve
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.According to following explanation and claim
Book, advantages and features of the invention will be apparent from, it is necessary to illustrate, accompanying drawing non-compares using simplified form and accurately
Rate, is only used for conveniently, lucidly aiding in illustrating the purpose of the embodiment of the present invention.
It is as shown in Figure 1 a kind of structural representation of White-light LED package structure of the invention, including LED blue chips 3, patch
Close layer 2 and the fluorescence chip 1 being fitted in by laminating layer on LED blue chips, the laminating layer doping red fluorescence powder.
Embodiment 1
Diameter 75mm is obtained by Czochralski grown, path length 150mm fluorescent crystal, then cleaved, grinding, polishing is waited
It is respectively 4mm to obtain length and width, and thickness 0.3mm fluorescence chip is cleaned up；Weigh a certain amount of red light fluorescent powder and add inorganic silica gel
In, the percentage by weight that red fluorescence powder accounts for inorganic silica gel is 0.01%, is well mixed, and removes the bubble in silica gel, then
Proper silica gel point is covered on silica gel on blue chip, and fluorescence chip by mode for dispensing glue；Finally device is existed
Toasted at a temperature of 80, obtain recombined white light LED component.
Fig. 2 is the energy distribution curve pair of the white light LEDs that recombined white light LED component is fitted with common wafer in embodiment 1
Than figure, the white light LEDs light efficiency fitted using common wafer：145.8；Colour temperature：6065K；Colour rendering index：65.0, and in embodiment 1
Recombined white light LED component light efficiency：129.6；Colour temperature：4152K；Colour rendering index：80.5, it is seen then that mixed in laminating layer inorganic silica gel
Miscellaneous red light fluorescent powder can realize the regulation of colour rendering index.
Embodiment 2
Diameter 75mm is obtained by Czochralski grown, path length 150mm fluorescent crystal, then cleaved, grinding, polishing is waited
It is respectively 4mm to obtain length and width, and thickness 0.3mm fluorescence chip is cleaned up；Weigh a certain amount of red light fluorescent powder and add inorganic silica gel
In, the percentage by weight that red fluorescence powder accounts for inorganic silica gel is 2.5%, is well mixed, and remove the bubble in silica gel, Ran Houtong
Mode for dispensing glue is crossed to cover proper silica gel point on silica gel on blue chip, and fluorescence chip；Finally by device 100
At a temperature of toasted, obtain recombined white light LED component.
Embodiment 3
Diameter 75mm is obtained by Czochralski grown, path length 150mm fluorescent crystal, then cleaved, grinding, polishing is waited
The fluorescence chip of lens shape is obtained, is cleaned up；Weigh a certain amount of red light fluorescent powder to add in organic glue, red fluorescence powder
The percentage by weight for occupying machine glue is 5%, is well mixed, and removes the bubble in organic glue, then passes through side for dispensing glue
Formula covers appropriate glue spots on glue on blue chip, and fluorescence chip；Finally device is carried out at a temperature of 150
Baking, obtains recombined white light LED component.
Embodiment 4
Diameter 75mm is obtained by Czochralski grown, path length 150mm fluorescent crystal, then cleaved, grinding, polishing is waited
It is respectively 5mm to obtain length and width, and thickness 0.25mm fluorescence chip is cleaned up；Weigh a certain amount of red light fluorescent powder supplying low melting point
In glass dust, red light fluorescent powder accounts for the 0.35% of total weight percent, is well mixed, then by glass dust by way of coating
It is covered on blue chip, and fluorescence chip is pressed in above glass dust；Device is put into sealed high temperature furnace, and is passed through nitrogen
As protective atmosphere, air pressure is an atmospheric pressure, is warming up to 400 DEG C with 200 DEG C per hour of speed, constant temperature 20 minutes makes glass
Glass powder is fully melted and is brought into close contact with chip and chip, is finally down to room temperature with 400 DEG C per hour of speed.Obtain compound white
Light LED component.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (5)
1. a kind of method for packing of White-light LED package structure, it is characterised in that：Comprise the following steps：
(1) fluorescence chip is made, fluorescence chip principal component is rear-earth-doped YAG, is given birth to by czochralski method, temperature gradient method or bubble
Method is obtained, and then obtains various corresponding sizes, fluorescence chip processing slabbing, column, strip or lens through cutting polishing
One kind in structure；
(2) red fluorescence powder is blended in glass powder with low melting point, glass dust after mixing is covered on blue chip；
(3) fluorescence chip is pressed in above glass dust；
(4) sealed high temperature furnace is put into, and is passed through nitrogen as protective atmosphere, air pressure is an atmospheric pressure, with 200 DEG C per hour
Speed be warming up to 400 DEG C, constant temperature 20 minutes makes glass dust fully melt and be brought into close contact with chip and chip, finally with every
The speed of 400 DEG C of hour is down to room temperature；White-light LED package structure includes LED blue chips, laminating layer and pasted by laminating layer
Fluorescence chip of the conjunction on LED blue chips, the laminating layer doping red fluorescence powder, the laminating layer is glass.
2. a kind of method for packing of White-light LED package structure according to claim 1, it is characterised in that：The fluorescence is brilliant
Piece is sheet, strip or lens arrangement.
3. a kind of method for packing of White-light LED package structure according to claim 2, it is characterised in that：The fluorescence is brilliant
Piece is Garnet monocrystalline or polycrystalline fluorescent material.
4. a kind of method for packing of White-light LED package structure according to claim 3, it is characterised in that：The low melting point
The melting range of glass dust is 390-410 DEG C.
5. a kind of method for packing of White-light LED package structure according to claim 4, it is characterised in that：The red is glimmering
Light powder accounts for total weight percent for 0.01%-5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410105225.3A CN103943755B (en) | 2014-03-20 | 2014-03-20 | A kind of White-light LED package structure and method for packing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410105225.3A CN103943755B (en) | 2014-03-20 | 2014-03-20 | A kind of White-light LED package structure and method for packing |
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| Publication Number | Publication Date |
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| CN103943755A CN103943755A (en) | 2014-07-23 |
| CN103943755B true CN103943755B (en) | 2017-09-26 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830587A (en) * | 2019-01-10 | 2019-05-31 | 徐煜 | A kind of full angle shines and the led lighting source production method of single side encapsulation |
| CN112760095A (en) * | 2021-01-26 | 2021-05-07 | 复旦大学 | Fluorescent material for high-color-rendering fluorescence conversion type white light laser light source and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815765A (en) * | 2005-12-19 | 2006-08-09 | 中山大学 | YAG chip-type white-light light-emitting-diode and its packing method |
| CN202063867U (en) * | 2010-11-10 | 2011-12-07 | 宸鸿光电科技股份有限公司 | Optical grade composite pressure sensing rubber and device with same |
| CN203481270U (en) * | 2013-09-03 | 2014-03-12 | 深圳市天电光电科技有限公司 | LED (Light-Emitting Diode) packaging structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090121252A1 (en) * | 2007-11-14 | 2009-05-14 | Hung-Tsung Hsu | Method for manufacturing flip-chip light emitting diode package |
| CN201779526U (en) * | 2010-09-26 | 2011-03-30 | 蔡鸿 | Led light source |
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- 2014-03-20 CN CN201410105225.3A patent/CN103943755B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815765A (en) * | 2005-12-19 | 2006-08-09 | 中山大学 | YAG chip-type white-light light-emitting-diode and its packing method |
| CN202063867U (en) * | 2010-11-10 | 2011-12-07 | 宸鸿光电科技股份有限公司 | Optical grade composite pressure sensing rubber and device with same |
| CN203481270U (en) * | 2013-09-03 | 2014-03-12 | 深圳市天电光电科技有限公司 | LED (Light-Emitting Diode) packaging structure |
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