CN102005531A - Packaging structure and packaging method of inverted LED (light emitting diode) chip - Google Patents

Packaging structure and packaging method of inverted LED (light emitting diode) chip Download PDF

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Publication number
CN102005531A
CN102005531A CN2010105091066A CN201010509106A CN102005531A CN 102005531 A CN102005531 A CN 102005531A CN 2010105091066 A CN2010105091066 A CN 2010105091066A CN 201010509106 A CN201010509106 A CN 201010509106A CN 102005531 A CN102005531 A CN 102005531A
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China
Prior art keywords
heat
glue
led chip
radiating substrate
chip
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Pending
Application number
CN2010105091066A
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Chinese (zh)
Inventor
陈林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Real Faith Lighting Co., Ltd.
Original Assignee
陈林
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 陈林 filed Critical 陈林
Priority to CN2010105091066A priority Critical patent/CN102005531A/en
Publication of CN102005531A publication Critical patent/CN102005531A/en
Priority to CN2011103030471A priority patent/CN102354724A/en
Pending legal-status Critical Current

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Abstract

The invention relates to the technical field of LED (light emitting diode), particularly to a packaging structure and a packaging method of an inverted LED chip, which comprises an LED chip and a radiating base plate, wherein the front end surface of the radiating base plate is bonded with a fluorescence glue, the LED chip is connected to an electrode at the back of the radiating base plate and eutectic processing is carried out, and the LED chip is corresponding to the position of the fluorescence glue. In the packaging structure, the LED chip is placed on the electrode at the back of the base plate and is subject to the eutectic processing together with the radiating base plate, and the radiating base plate can educe the heat quantity from the eutectic part quickly, furthermore, light decline is reduced and luminous flux is increased, and the packaging structure is simple, and the packaging technology is simplified.

Description

The encapsulating structure of flip LED chips and method for packing thereof
Technical field:
The present invention relates to the LED technical field, refer in particular to the encapsulating structure and the method for packing thereof of flip LED chips.
Background technology:
LED is a kind of light emitting semiconductor device, is used as indicator light, display screen etc. widely.White light LEDs be described as replace fluorescent lamps and incandescent lamp the 4th generation lighting source.LED changed the incandescent lamp tungsten filament luminous with the luminous principle of fluorescent lamp tricolor powder, utilize electroluminescence, have that light efficiency height, radiationless, life-span are long, an advantage of low-power consumption and environmental protection.A kind of traditional approach that forms white light LEDs is that blue light or ultraviolet chip excite the fluorescent material that is covering on chip, and the light stimulus fluorescent material that chip sends under electricity drives produces the visible light of other wave band, and the each several part colour mixture forms white light.For the LED encapsulation, heat radiation is a key technical problem, and the quality of the effect of heat dissipation technology will directly have influence on the performance of LED.More the encapsulating structure of existing flip LED chips uses ceramic substrate or carborundum and led chip to carry out eutectic and handles, but the heat that produces during led chip work is to see through the eutectic position heat to be conducted to ceramic substrate or carborundum again, radiating efficiency is low, the light decay height, luminous flux is few, the encapsulating structure complex process.
Summary of the invention:
Purpose of the present invention is exactly to provide a kind of encapsulating structure that increases radiating efficiency and the simple flip LED chips of encapsulating structure technology at the deficiency of prior art existence, and the method for packing of this flip LED chips also is provided.
To achieve these goals, the technical solution used in the present invention is:
The encapsulating structure of flip LED chips, it includes led chip, heat-radiating substrate, is bonded with fluorescent glue on the front end face of heat-radiating substrate, and led chip is connected on the electrode at the heat-radiating substrate back side and carries out eutectic and handle, and led chip is corresponding with the position of fluorescent glue.
Described fluorescent glue is mixed into fluorescence glue by fluorescent material and glue and makes after drying.
The present invention also provides the method for packing of flip LED chips, may further comprise the steps:
A, baking heat-radiating substrate are removed aqueous vapor;
B, to the surface treatment of heat-radiating substrate electricity slurry;
Fluorescence glue is made in C, adding glue mixing in fluorescent material;
D, fluorescence glue is put to the front end face of heat-radiating substrate in the mode of a glue;
E, pre-roasting;
F, led chip is placed on the electrode of substrate back;
G, led chip is carried out eutectic with heat-radiating substrate handle;
Bake H, back.
Wherein, pre-roasting being specially described in the step e: under 100~150 ℃ of temperature, toasted 20~30 minutes.
Wherein, back roasting being specially described in the step H: under 200~250 ℃ of temperature, toasted 20~30 minutes.
Beneficial effect of the present invention is: the present invention includes led chip, heat-radiating substrate, be bonded with fluorescent glue on the front end face of heat-radiating substrate, led chip is connected on the electrode at the heat-radiating substrate back side and carries out eutectic and handle, led chip is corresponding with the position of fluorescent glue, the present invention places led chip on the electrode of substrate back and carries out eutectic with heat-radiating substrate and handle, heat-radiating substrate can will be derived fast from the heat at eutectic position, and then reduce light decay and increase luminous flux, and encapsulating structure is simple, has simplified packaging technology.
Description of drawings:
Fig. 1 is a structural representation of the present invention.
Embodiment:
The present invention is further illustrated below in conjunction with accompanying drawing, see shown in Figure 1, the encapsulating structure of flip LED chips includes led chip 1, heat-radiating substrate 2, be bonded with fluorescent glue 3 on the front end face of heat-radiating substrate 2, led chip 1 is connected on the electrode 4 at heat-radiating substrate 2 back sides and carries out eutectic and handle, and led chip 1 is corresponding with the position of fluorescent glue 3.
Described fluorescent glue 3 is mixed into fluorescent glue 3 water by fluorescent material and glue and makes after drying.Separate with materials such as glue between fluorescent material of the present invention and the led chip 1, make fluorescent material and led chip 1 two parts heat be separated, improve radiating effect.
Adopt the method for packing of the flip LED chips 1 of above-mentioned encapsulating structure, may further comprise the steps:
1, baking heat-radiating substrate 2 is removed aqueous vapor;
2, to heat-radiating substrate 2 electricity slurry surface treatments;
3, in fluorescent material, add glue and mix, make fluorescent glue 3 water;
4, with point gum machine fluorescent glue 3 water are put specific location to the front end face of heat-radiating substrate 2 in the mode of a glue;
5, pre-roasting: as under 100~150 ℃ of temperature, to toast 20~30 minutes;
6, led chip 1 is placed on the electrode 4 of substrate back with accurate pick-and-place machine;
7, with the eutectic machine led chip 1 being carried out eutectic with heat-radiating substrate 2 handles;
8, the back is roasting: toasted 20~30 minutes under 200~250 ℃ of temperature;
9, optical check.
The present invention places led chip 1 on the electrode 4 of substrate back and carries out eutectic with heat-radiating substrate 2 and handle, heat-radiating substrate 2 can will be derived fast from the heat at eutectic position, and then reduce light decay and increase luminous flux, can make flip chip LED luminous flux effectively increase by 10~20%, and effectively improve its light decay test result, and encapsulating structure is simple, has simplified packaging technology.
Certainly, the above only is a better embodiment of the present invention, so all equivalences of doing according to the described structure of patent claim of the present invention, feature and principle change or modify, is included in the patent claim of the present invention.

Claims (5)

1. the encapsulating structure of flip LED chips, it includes led chip, heat-radiating substrate, it is characterized in that: be bonded with fluorescent glue on the front end face of described heat-radiating substrate, led chip is connected on the electrode at the heat-radiating substrate back side and carries out eutectic and handle, and led chip is corresponding with the position of fluorescent glue.
2. the encapsulating structure of flip LED chips according to claim 1, it is characterized in that: described fluorescent glue is mixed into fluorescence glue by fluorescent material and glue and makes after drying.
3. the method for packing of flip LED chips is characterized in that, may further comprise the steps:
A, baking heat-radiating substrate are removed aqueous vapor;
B, to the surface treatment of heat-radiating substrate electricity slurry;
Fluorescence glue is made in C, adding glue mixing in fluorescent material;
D, fluorescence glue is put to the front end face of heat-radiating substrate in the mode of a glue;
E, pre-roasting;
F, led chip is placed on the electrode of substrate back;
G, led chip is carried out eutectic with heat-radiating substrate handle;
Bake H, back.
4. the method for packing of flip LED chips according to claim 3 is characterized in that: pre-roasting being specially described in the step e: toasted 20~30 minutes under 100~150 ℃ of temperature.
5. the method for packing of flip LED chips according to claim 3 is characterized in that: back roasting being specially described in the step H: toasted 20~30 minutes under 200~250 ℃ of temperature.
CN2010105091066A 2010-10-15 2010-10-15 Packaging structure and packaging method of inverted LED (light emitting diode) chip Pending CN102005531A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010105091066A CN102005531A (en) 2010-10-15 2010-10-15 Packaging structure and packaging method of inverted LED (light emitting diode) chip
CN2011103030471A CN102354724A (en) 2010-10-15 2011-09-30 LED (Light Emitting Diode) inversion structure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105091066A CN102005531A (en) 2010-10-15 2010-10-15 Packaging structure and packaging method of inverted LED (light emitting diode) chip

Publications (1)

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CN102005531A true CN102005531A (en) 2011-04-06

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CN2011103030471A Pending CN102354724A (en) 2010-10-15 2011-09-30 LED (Light Emitting Diode) inversion structure and preparation method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103113886A (en) * 2013-01-30 2013-05-22 中国科学院长春光学精密机械与物理研究所 Nitrogen-doped carbon nanometer particle as well as preparation method and application thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104600186A (en) * 2013-10-31 2015-05-06 展晶科技(深圳)有限公司 Manufacturing method of LED packaging body
CN106816519A (en) * 2015-12-02 2017-06-09 佛山市国星半导体技术有限公司 White light LEDs finished product and preparation method thereof
CN105355729B (en) * 2015-12-02 2018-06-22 佛山市国星半导体技术有限公司 LED chip and preparation method thereof
CN110112147A (en) * 2019-05-20 2019-08-09 威创集团股份有限公司 A kind of LED display module and preparation method thereof
CN113237366B (en) * 2021-04-09 2023-06-27 瑞声科技(南京)有限公司 Preparation method of working medium heat dissipation element

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WO2007117698A2 (en) * 2006-04-07 2007-10-18 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing material
CN201435407Y (en) * 2009-07-06 2010-03-31 晶诚(郑州)科技有限公司 Novel substrate used for encapsulating LED
CN101621105B (en) * 2009-07-30 2011-08-17 宁波晶科光电有限公司 LED flip chip integration encapsulation method and LED encapsulated by same
CN101740707B (en) * 2009-12-11 2013-11-06 晶科电子(广州)有限公司 Preformed fluorescent powder patch and method for encapsulating same and light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103113886A (en) * 2013-01-30 2013-05-22 中国科学院长春光学精密机械与物理研究所 Nitrogen-doped carbon nanometer particle as well as preparation method and application thereof

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Owner name: GUANGDONG REAL FAITH LIGHTING CO., LTD.

Free format text: FORMER OWNER: CHEN LIN

Effective date: 20111008

C41 Transfer of patent application or patent right or utility model
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Free format text: CORRECT: ADDRESS; FROM: 523000 DONGGUAN, GUANGDONG PROVINCE TO: 528251 FOSHAN, GUANGDONG PROVINCE

TA01 Transfer of patent application right

Effective date of registration: 20111008

Address after: 528251 Guangdong Province, Foshan City Nanhai Pingzhou Shawei Industrial District South Street No. 21

Applicant after: Guangdong Real Faith Lighting Co., Ltd.

Address before: 523000 Guangdong Province, Dongguan City Wancheng District BBK District 8 Building No. 88

Applicant before: Chen Lin

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20110406