CN112820814A - Dam-free COB LED substrate and preparation method and application thereof - Google Patents
Dam-free COB LED substrate and preparation method and application thereof Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000003292 glue Substances 0.000 claims abstract description 105
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000011889 copper foil Substances 0.000 claims abstract description 35
- 238000003825 pressing Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 203
- 239000004593 Epoxy Substances 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000012790 adhesive layer Substances 0.000 claims description 9
- 239000004033 plastic Substances 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 7
- 229920000728 polyester Polymers 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 229920002635 polyurethane Polymers 0.000 claims description 7
- 239000004814 polyurethane Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 7
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 12
- 238000004806 packaging method and process Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
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- 229910002027 silica gel Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
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- 230000007547 defect Effects 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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Abstract
The invention provides a dam-free COB LED substrate and a preparation method and application thereof. Exempt from box dam COB LED base plate is including the first basic unit, insulating glue film, copper foil layer, printing ink layer, pure glue film and the second basic unit that stack gradually. According to the COB LED substrate, the dam process flow of the traditional COB light source is removed through a double-layer or multi-layer substrate pressing process, the transverse heat conduction and heat dissipation capacity of the COB light source is improved, the service life of the COB light source is prolonged, and meanwhile, the COB light source is directly subjected to secondary light distribution through the appearance design of an upper substrate, and the light emitting shape is guaranteed.
Description
Technical Field
The invention belongs to the field of LED display, and particularly relates to a dam-free COB LED substrate and a preparation method and application thereof.
Background
At present, most of COB structure products on the market are the following two schemes: 1) the silicone jelly-shaped box dam glue is used, a specific box dam machine is used for carrying out box dam operation according to required parameters such as specific shape, height and the like, and an oven is used for carrying out long-time curing after the completion. The defects of long process flow and cycle and large equipment requirement; 2) when the substrate is manufactured, plastic is used for carrying out dam plasticity, and dam operation is not needed. The defects that the plastic model is fixed, the cost of the mould is high, and the mould period of the plastic dam is long.
CN111463198A discloses a COB packaging structure of a UVC-LED and a manufacturing method thereof, wherein the COB packaging structure comprises a ceramic circuit board, a ceramic dam, a transparent cover plate, a UVC-LED chip, a ceramic insulating plate and a reflection laminate, the light emitted by the UVC-LED chip is provided to be reflected out of the transparent cover plate through a reflection coating of an flared hole, the directivity of the light is effectively improved, and the light-emitting efficiency of a COB light source is greatly improved; compared with the insulating glue, the ceramic insulating plate has stable performance, avoids the risk of short circuit caused by aging, and has high safety; transparent cover's viscose department has plated the metal protection layer, however this COB packaging structure need set up the ceramic box dam, leads to the COB light source transversely to lead to heat conduction, heat-sinking capability and COB light source's life-span relatively poor.
CN206490058U discloses a dam-free COB light source packaging structure, which comprises a substrate, wherein a specular reflection area is arranged on the substrate, LED light-emitting chips are further uniformly distributed on the specular reflection area, and fluorescent glue is filled among the LED light-emitting chips; the periphery of the mirror reflection area is provided with a BT resin surrounding ring, and the thickness of the BT resin surrounding ring is the same as that of the fluorescent glue. The BT resin surrounding ring is characterized in that the surface of the BT resin surrounding ring is irregular in gong shape, the LED light-emitting chip is packaged with a lens, the LED light-emitting chip further packaged with the lens can be integrated with a light-reflecting cup, and although the traditional COB light source is removed, the COB light source still has the problems of transverse heat conduction, heat dissipation capacity and poor service life of the COB light source due to the fact that silica gel, resin and other chemical materials are utilized to form the dam process flow.
Therefore, there is a need to provide a new structure of a light source module of COB LED to overcome the above drawbacks.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a dam-free COB LED substrate and a preparation method and application thereof. Exempt from box dam COB LED base plate and increased horizontal heat conduction of COB light source and heat-sinking capability to provide the life-span of COB light source.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides a dam-free COB LED substrate which comprises a first base layer, an insulating glue layer, a copper foil layer, an ink layer, a pure glue layer and a second base layer which are sequentially stacked.
COB is a Chip On Board, namely, a bare Chip is adhered On an interconnection substrate by conductive or non-conductive adhesive, and then the electrical connection of the bare Chip is realized by wire bonding, wherein the COB LED is called COB LED source and COB LED module. The packaging method has various shapes of packaging forms such as long strip type, square type, round type, annular type, triangular type, fan type and the like.
According to the invention, the traditional COB light source is removed by a base material pressing process, chemical material box dam process flows such as silica gel and resin are utilized, pressing metal or inorganic non-metal material base materials are added on the traditional COB substrate, the pressing effect of double-layer or multilayer metal base or combined base is achieved, the transverse heat conduction and heat dissipation capacity of the COB light source is increased while the traditional COB light source box dam operation is replaced by the appearance design of the upper base material, so that the service life of the COB light source is prolonged, the secondary light distribution is directly carried out on the COB light source through the appearance design of the upper base material, and the light emitting light type is ensured.
Preferably, the thickness of the first base layer is 800-2000 μm, such as 800 μm, 820 μm, 840 μm, 860 μm, 880 μm, 900 μm, 920 μm, 940 μm, 960 μm, 980 μm, 1000 μm, 1200 μm, 1400 μm, 1600 μm, 2000 μm, etc.
The number of layers of the first base layer is preferably 1 or more, and may be, for example, 1 layer, 2 layers, 3 layers, 4 layers, 5 layers, 6 layers, or the like.
Preferably, the first base layer is selected from any one of a copper substrate, a ceramic substrate, a mirror aluminum substrate or plastic.
Preferably, the thickness of the insulating glue layer is 50-150 μm, and may be, for example, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, etc.
Preferably, the insulating glue layer is formed by high-temperature curing of insulating glue, and the insulating glue is selected from polyester insulating glue and/or epoxy insulating glue.
The above insulating glues are all commercially available, for example, as used in the present invention: polyester insulating glue (manufacturer: Niubaoli, brand 450A 80); epoxy insulating glue (manufacturer: Hongchang), etc.
Preferably, the high temperature curing temperature is 100-.
Preferably, the copper foil layer has a thickness of 20 to 50 μm, and may be, for example, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, or the like.
Preferably, the thickness of the ink layer is 10-30 μm, and may be, for example, 10 μm, 12 μm, 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 24 μm, 26 μm, 28 μm, 30 μm, or the like.
Preferably, the ink layer is selected from any one or a combination of at least two of WT05, LEW7S or LB-1900W.
Preferably, the thickness of the pure glue layer is 10-30 μm, and may be, for example, 10 μm, 12 μm, 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 24 μm, 26 μm, 28 μm, 30 μm, etc.
Preferably, the pure glue layer is selected from any one of epoxy, silicone or polyurethane or a combination of at least two of the epoxy, the silicone and the polyurethane.
All of the above pure gums are commercially available, for example: epoxy (such as manufacturer: Langbowan, brand: NO. 1-6120; manufacturer: Shilin, brand: SL3029, etc.); silicones (e.g. Flori photoelectric materials, trade marks)
A05-01H、
A05-01M、
A05-01L, etc.); polyurethane (manufacturer: Niubaoli, brand 450A80, etc.).
Preferably, the thickness of the second base layer is 700-2000 μm, such as 700 μm, 720 μm, 740 μm, 760 μm, 780 μm, 800 μm, 820 μm, 840 μm, 860 μm, 880 μm, 900 μm, 1000 μm, 1200 μm, 1400 μm, 1600 μm, 1800 μm, 2000 μm, etc.
The number of layers of the second base layer is preferably 1 or more, and may be, for example, 1 layer, 2 layers, 3 layers, 4 layers, 5 layers, 6 layers, or the like.
Preferably, the second base layer is selected from any one of a copper substrate, a ceramic substrate and a mirror aluminum substrate.
In a second aspect, the present invention provides a method for manufacturing a dam-free COB LED substrate according to the first aspect, including the following steps:
(1) coating the insulating glue on the first base layer, and then pressing at high temperature to form an insulating glue layer;
(2) after the copper foil is fixed on the insulating adhesive layer, forming a copper foil layer through high-temperature pressing;
(3) printing or spraying the printing ink on the copper foil layer, and then curing to form a printing ink layer;
(4) coating the pure glue on the ink layer, and then pressing at high temperature to form a pure glue layer;
(5) and fixing the second base layer on the pure glue layer, and then pressing at high temperature to form the second base layer.
Preferably, in the step (1), the step (2), the step (3) and the step (4), the temperature of the high-temperature pressing is 100-150 ℃, for example, 100 ℃, 110 ℃, 120 ℃, 130 ℃, 140 ℃, 150 ℃ and the like, and the time of the high-temperature pressing is 1.5-2h, for example, 1.5h, 1.6h, 1.7h, 1.8h, 1.9h, 2h and the like.
Preferably, the curing in step (3) is natural curing and/or baking curing.
Preferably, the temperature of the natural curing is 20-30 ℃, for example, 20 ℃, 22 ℃, 24 ℃, 26 ℃, 28 ℃, 30 ℃ and the like, and the time of the natural curing is 2-3h, for example, 2h, 2.2h, 2.4h, 2.6h, 2.8h, 3h and the like.
Preferably, the temperature of the baking curing is 100-110 ℃, such as 100 ℃, 102 ℃, 104 ℃, 106 ℃, 108 ℃, 110 ℃ and the like, and the time of the baking curing is 0.1-1h, such as 0.1h, 0.2h, 0.4h, 0.6h, 0.8h, 1h and the like.
In a third aspect, the present invention provides a dam-free COB LED substrate according to the first aspect, for use in manufacturing an LED light source.
The invention reserves the coating and packaging area at the rear end of the COB process by utilizing the appearance design of the pressed substrate so as to achieve the manufacturing scheme of replacing the traditional box dam process. By utilizing different materials of the press-fit base material, the purpose of assisting transverse heat dissipation of the mixture of the fluorescent powder and the silica gel in the COB light-emitting area can be achieved. The shape and the thickness of the press-fit substrate also achieve the effect of carrying out secondary light distribution on the COB light emitting area, and the setting of the light emitting light type of the final COB LED is met.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention is achieved by the design of the COB substrate, the working procedure of a dam required by the traditional COB light source is eliminated, the heat conduction path of the COB light source is enhanced, the service life of the light source is prolonged, and the secondary light distribution effect is achieved by using the base material;
(2) the transverse heat conduction capability of the dam-free COB LED substrate is expressed by a thermal imaging test, and is 60-65 ℃; the heat dissipation capacity is expressed by a thermal imaging test, and is 70-75 ℃; the service life of the light source is 10000-10200H; the light output pattern is represented by a remote device test, which is 100-110 degrees.
Drawings
FIG. 1 is a schematic structural diagram of a dam-free COB LED substrate according to the present invention;
the adhesive comprises a first base layer 1, an insulating adhesive layer 2, a copper foil layer 3, an ink layer 4, a pure adhesive layer 5 and a second base layer 6.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Fig. 1 is a schematic structural diagram of the dam-free COB LED substrate of the present invention, and as shown in fig. 1, the dam-free COB LED substrate includes a first base layer 1, an insulating adhesive layer 2, a copper foil layer 3, an ink layer 4, a pure adhesive layer 5, and a second base layer 6, which are sequentially stacked.
The sources of the components in the following examples are as follows: polyester insulating glue (manufacturer: Niubaoli, brand 450A80), epoxy insulating glue (manufacturer: Hongchang), epoxy pure glue (manufacturer: manufacturer)The method comprises the following steps: shilin, trade mark: SL3029), silicone based pure gum (Flori photoelectric material, brand
A05-01H), polyurethane pure rubber (manufacturer: nebivorangii, designation 450a80, etc.).
Example 1
The embodiment provides a dam-free COB LED substrate, which comprises a first base layer, an insulating glue layer, a copper foil layer, an ink layer, a pure glue layer and a second base layer which are sequentially stacked;
the first base layer is a mirror aluminum substrate with the thickness of 1 layer 900 mu m; the insulating glue layer is 120 mu m thick (the insulating glue is polyester insulating glue); the thickness of the copper foil layer is 35 mu m; the ink layer was a 20 μm thick ink layer (the ink was WT 05); the pure glue layer is a pure glue layer with the thickness of 20 mu m (the pure glue is epoxy pure glue); the second base layer is a 1-layer mirror aluminum substrate with the thickness of 800 mu m.
The preparation method of the dam-free COB LED substrate comprises the following steps:
(1) coating the insulating glue on the first base layer, and then pressing at a high temperature of 120 ℃ for 2h to form an insulating glue layer;
(2) fixing the copper foil on the insulating adhesive layer, and then pressing the copper foil at the high temperature of 120 ℃ for 2 hours to form a copper foil layer;
(3) after printing the ink on the copper foil layer, curing for 2.5 hours at 25 ℃ to form an ink layer;
(4) coating the pure glue on the ink layer, and then pressing at the high temperature of 120 ℃ for 1.5h to form a pure glue layer;
(5) and fixing the second base layer on the pure glue layer, and then pressing at a high temperature of 120 ℃ for 1.5h to form the second base layer.
Example 2
The embodiment provides a dam-free COB LED substrate, which comprises a first base layer, an insulating glue layer, a copper foil layer, an ink layer, a pure glue layer and a second base layer which are sequentially stacked;
the first base layer is a ceramic substrate with the thickness of 1 layer 900 mu m; the insulating glue layer is a 120-micron-thick insulating glue layer (the insulating glue is epoxy insulating glue); the thickness of the copper foil layer is 35 mu m; the ink layer was a 20 μm thick ink layer (the ink was LEW 7S); the pure glue layer is a pure glue layer with the thickness of 20 mu m (the pure glue is organic silicon pure glue); the second base layer is a 1-layer ceramic substrate with the thickness of 800 mu m.
The preparation method of the dam-free COB LED substrate comprises the following steps:
(1) coating the insulating glue on the first base layer, and then pressing at the high temperature of 150 ℃ for 1.5h to form an insulating glue layer;
(2) fixing the copper foil on the insulating adhesive layer, and then pressing for 2h at a high temperature of 100 ℃ to form a copper foil layer;
(3) after printing the ink on the copper foil layer, curing for 2.5 hours at 25 ℃ to form an ink layer;
(4) coating the pure glue on the ink layer, and then pressing at the high temperature of 150 ℃ for 1.5h to form a pure glue layer;
(5) and fixing the second base layer on the pure glue layer, and then pressing at a high temperature of 100 ℃ for 2 hours to form the second base layer.
Example 3
The embodiment provides a dam-free COB LED substrate, which comprises a first base layer, an insulating glue layer, a copper foil layer, an ink layer, a pure glue layer and a second base layer which are sequentially stacked;
the first base layer is a 1-layer 900 μm thick copper substrate; the insulating glue layer is a 120-micron-thick insulating glue layer (the insulating glue is organic silicon insulating glue); the thickness of the copper foil layer is 35 mu m; the ink layer is an ink layer with the thickness of 20 mu m (the ink is LB-1900W); the pure glue layer is a pure glue layer with the thickness of 20 mu m (the pure glue is polyurethane pure glue); the second base layer is a 1-layer 800-micron-thick copper substrate.
The preparation method of the dam-free COB LED substrate comprises the following steps:
(1) coating the insulating glue on the first base layer, and then pressing for 2h at a high temperature of 100 ℃ to form an insulating glue layer;
(2) fixing the copper foil on the insulating adhesive layer, and then pressing at the high temperature of 150 ℃ for 1.5h to form a copper foil layer;
(3) after printing the ink on the copper foil layer, curing for 2.5 hours at 25 ℃ to form an ink layer;
(4) coating the pure glue on the ink layer, and then pressing at the high temperature of 150 ℃ for 1.5h to form a pure glue layer;
(5) and fixing the second base layer on the pure glue layer, and then pressing for 2h at a high temperature of 100 ℃ to form the second base layer.
Example 4
The embodiment provides a dam-free COB LED substrate, which comprises a first base layer, an insulating glue layer, a copper foil layer, an ink layer, a pure glue layer and a second base layer which are sequentially stacked;
the first base layer is a 1-layer mirror aluminum substrate with the thickness of 1000 mu m; the insulating glue layer is a 100-micron thick insulating glue layer (the insulating glue is polyester insulating glue); the thickness of the copper foil layer is 30 μm; the ink layer was a 15 μm thick ink layer (the ink was WT 05); the pure glue layer is a pure glue layer with the thickness of 30 mu m (the pure glue is epoxy pure glue); the second base layer is a 1-layer mirror aluminum substrate with the thickness of 700 mu m.
The preparation method of the dam-free COB LED substrate is the same as that of the embodiment 1.
Example 5
The embodiment provides a dam-free COB LED substrate, which comprises a first base layer, an insulating glue layer, a copper foil layer, an ink layer, a pure glue layer and a second base layer which are sequentially stacked;
the first base layer is a 1-layer mirror aluminum substrate with the thickness of 800 mu m; the insulating glue layer is 150 mu m thick (the insulating glue is polyester insulating glue); the thickness of the copper foil layer is 20 μm; the ink layer was a 25 μm thick ink layer (the ink was WT 05); the pure glue layer is a pure glue layer with the thickness of 10 mu m (the pure glue is epoxy pure glue); the second base layer is a 1-layer mirror aluminum substrate with the thickness of 900 mu m.
The preparation method of the dam-free COB LED substrate is the same as that of the embodiment 1.
Comparative example 1
This comparative example provides a COB LED base plate, and the difference with embodiment 1 lies in, does not contain first basic unit, contains the box dam, specifically is: aluminum base layer + insulating layer + copper foil layer + printing ink layer + silica gel dam layer.
Comparative example 2
This comparative example provides a COB LED base plate, and the difference with embodiment 1 lies in, does not contain the second basic unit, contains the box dam, specifically is aluminium base layer + insulating layer + copper foil layer + printing ink layer + the box dam layer of moulding plastics.
Performance testing
Each performance test was performed on the dam-free COB LED substrates provided in examples 1 to 5 and the COB LED substrates provided in comparative examples 1 to 2, and the specific test methods were as follows:
(1) transverse heat conductivity: performance in thermographic testing, reference UTi 220A;
(2) heat dissipation capacity: performance in thermographic testing, reference UTi 220A;
(3) light source life: performance in thermographic testing, reference UTi 220A;
(4) light-emitting type: the performance was tested at the remote facility, see HAAS-1200.
The specific test results are shown in table 1:
TABLE 1
As shown in the test data in Table 1, the transverse heat conduction capability of the dam-free COB LED substrate is shown by a thermal imaging test, and is 60-65 ℃; the heat dissipation capacity is expressed by a thermal imaging test, and is 70-75 ℃; the service life of the light source is 10000-10200H; the light output pattern is represented by a remote device test, which is 100-110 degrees. The invention fully shows that the traditional COB light source dam process flow using chemical materials such as silica gel, resin and the like is removed through the substrate pressing process, the metal or inorganic non-metal material substrate is additionally pressed on the traditional COB substrate, the pressing effect of the double-layer or multi-layer metal substrate or combined substrate is achieved, the transverse heat conduction and heat dissipation capacity of the COB light source is increased while the traditional COB light source dam operation is replaced through the appearance design of the upper substrate, so that the service life of the COB light source is prolonged, the COB light source is directly subjected to secondary light distribution through the appearance design of the upper substrate, and the light emitting light type is ensured.
The applicant declares that the present invention is illustrated by the above embodiments, but the present invention is not limited to the above embodiments, i.e. the present invention is not limited to the above embodiments. It will be apparent to those skilled in the art that any modification of the present invention, equivalent substitutions of selected materials and additions of auxiliary components, selection of specific modes and the like, which are within the scope and disclosure of the present invention, are contemplated by the present invention.
Claims (10)
1. The utility model provides an exempt from box dam COB LED base plate, its characterized in that, exempt from box dam COB LED base plate including first basic unit, insulating glue film, copper foil layer, printing ink layer, pure glue film and the second basic unit that stacks gradually.
2. The dam-free COB LED substrate according to claim 1, wherein the thickness of the first base layer is 800-2000 μm;
preferably, the number of the first base layer is more than 1;
preferably, the first base layer is selected from any one of a copper substrate, a ceramic substrate, a mirror aluminum substrate or plastic.
3. Dam-free COB LED substrate according to claim 1 or 2, wherein the thickness of the layer of insulating glue is 50-150 μm;
preferably, the insulating glue layer is formed by high-temperature curing of insulating glue, and the insulating glue is selected from polyester insulating glue and/or epoxy insulating glue;
preferably, the temperature of the high-temperature curing is 100-150 ℃.
4. Dam-free COB LED substrate according to any of claims 1 to 3, wherein the copper foil layer has a thickness of 20 to 50 μm.
5. Dam-free COB LED substrate according to any of claims 1 to 4, wherein the ink layer has a thickness of 10 to 30 μm;
preferably, the ink layer is selected from any one or a combination of at least two of WT05, LEW7S or LB-1900W.
6. Dam-free COB LED substrate according to any of claims 1 to 5, wherein the thickness of the clear glue layer is 10-30 μm;
preferably, the pure glue layer is selected from any one of epoxy, silicone or polyurethane or a combination of at least two of the epoxy, the silicone and the polyurethane.
7. The dam-free COB LED substrate according to any one of claims 1 to 6, wherein the thickness of the second base layer is 700-2000 μm;
preferably, the number of the second base layer is more than 1;
preferably, the second base layer is selected from any one of a copper substrate, a ceramic substrate, a mirror aluminum substrate and plastic.
8. The dam-free COB LED substrate preparation method according to any one of claims 1 to 7, wherein the dam-free COB LED substrate preparation method comprises the following steps:
(1) coating the insulating glue on the first base layer, and then pressing at high temperature to form an insulating glue layer;
(2) after the copper foil is fixed on the insulating adhesive layer, forming a copper foil layer through high-temperature pressing;
(3) printing or spraying the printing ink on the copper foil layer, and then curing to form a printing ink layer;
(4) coating the pure glue on the ink layer, and then pressing at high temperature to form a pure glue layer;
(5) and fixing the second base layer on the pure glue layer, and then pressing at high temperature to form the second base layer.
9. The method for preparing a dam-free COB LED substrate according to claim 8, wherein in the step (1), the step (2), the step (3) and the step (4), the temperature of the high-temperature pressing is 100 ℃ and 150 ℃ respectively, and the time of the high-temperature pressing is 1.5-2h respectively;
preferably, the curing of the step (3) is natural curing and/or baking curing;
preferably, the natural curing temperature is 20-30 ℃, and the natural curing time is 2-3 h;
preferably, the temperature for baking and curing is 100-110 ℃, and the time for baking and curing is 0.1-1 h.
10. Use of dam-free COB LED substrate according to any one of claims 1 to 7 for the production of LED light sources.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474551A (en) * | 2013-08-21 | 2013-12-25 | 奇瑞汽车股份有限公司 | High-power light-emitting diode (LED) substrate and packaging method thereof |
| CN205245106U (en) * | 2015-12-16 | 2016-05-18 | 东莞市星曜光电照明科技有限公司 | Integrative encapsulation thermal module of direct type |
| CN205900596U (en) * | 2016-08-08 | 2017-01-18 | 中山市光圣半导体科技有限责任公司 | Integrated form high power ultraviolet LED heating panel |
| CN107124816A (en) * | 2017-04-10 | 2017-09-01 | 上海温良昌平电器科技股份有限公司 | The straight-through radiating copper base of one kind and its preparation technology |
| CN109640548A (en) * | 2018-12-29 | 2019-04-16 | 广州兴森快捷电路科技有限公司 | Prepreg compression method and PCB construction |
| CN111613611A (en) * | 2020-05-25 | 2020-09-01 | 欧普照明股份有限公司 | Substrate structure, defined circuit board and lighting lamp |
-
2021
- 2021-02-26 CN CN202110219664.7A patent/CN112820814A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474551A (en) * | 2013-08-21 | 2013-12-25 | 奇瑞汽车股份有限公司 | High-power light-emitting diode (LED) substrate and packaging method thereof |
| CN205245106U (en) * | 2015-12-16 | 2016-05-18 | 东莞市星曜光电照明科技有限公司 | Integrative encapsulation thermal module of direct type |
| CN205900596U (en) * | 2016-08-08 | 2017-01-18 | 中山市光圣半导体科技有限责任公司 | Integrated form high power ultraviolet LED heating panel |
| CN107124816A (en) * | 2017-04-10 | 2017-09-01 | 上海温良昌平电器科技股份有限公司 | The straight-through radiating copper base of one kind and its preparation technology |
| CN109640548A (en) * | 2018-12-29 | 2019-04-16 | 广州兴森快捷电路科技有限公司 | Prepreg compression method and PCB construction |
| CN111613611A (en) * | 2020-05-25 | 2020-09-01 | 欧普照明股份有限公司 | Substrate structure, defined circuit board and lighting lamp |
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