CN101626139A - TO packaging technology of semiconductor laser and packaging tube base - Google Patents
TO packaging technology of semiconductor laser and packaging tube base Download PDFInfo
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- CN101626139A CN101626139A CN200910017589A CN200910017589A CN101626139A CN 101626139 A CN101626139 A CN 101626139A CN 200910017589 A CN200910017589 A CN 200910017589A CN 200910017589 A CN200910017589 A CN 200910017589A CN 101626139 A CN101626139 A CN 101626139A
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Abstract
The invention provides a TO packaging technology of a semiconductor laser and a packaging tube base. The TO packaging technology comprises the following steps of: (1) gluing a chip, alloying, bonding and photoelectric testing on a tube tongue routinely; (2) gluing a rod lens on the upper end face of the tube tongue, so that the rod lens is positioned above the luminous cavity surface of the chip, and the center surface of the rod lens is parallel with the luminous cavity surface of the chip; and (3) packing a tube cap which is corresponding to a TO tube base type on the TO tube base. The TO packing tube base comprises a tube shell, a tube tongue and a tube foot, wherein the tube shell is in the structure of a cylinder, the side face of the cylinder is provided with a groove, the tube tongue is positioned on the tube shell, and the tube tongue is in the structure of a semi-cylinder. The invention avoids the problems of rod lens pollution, complex technology, and the like, due to the chip and the rod lens are respectively arranged on the TO tube base and a tube cap, simplifies a technology for compressing beam of the semiconductor laser, heightens work efficiency, and guarantees product quality.
Description
Technical field
The present invention relates to a kind of TO packaging technology and TO base of semiconductor laser, belong to the encapsulation technology field of laser.
Background technology
Semiconductor laser has that volume is little, in light weight, efficient is high, the life-span is long, be easy to modulation and advantage such as cheap, obtained using widely in industry, medical science and military field.But because the special construction of semiconductor laser makes that its fast axle angle of divergence is bigger, the slow axis angle of divergence is less, and semiconductor laser beam is oval symmetry, is restricting semiconductor laser and is using.Application except only a few, outside the side as DPL (solid state laser), great majority are used, and all require semiconductor laser beam is compressed as end face, the fiber laser of the DPSSL (all solid state laser) of diode-end-pumped and the side-pumped laser of having relatively high expectations etc.Semiconductor laser generally adopts the TO base to encapsulate at present, traditional TO base comprises shell, pipe tongue and pin, the pipe tongue be located at shell above, it is shaped as one or six posts, manage the chip (chip attach is in the middle of a side of pipe tongue) that only bonds on the tongue, on the pipe tongue, encapsulate pipe cap, these pipe cap internal bond post lens, realize the light beam compression by regulating pipe cap, when light beam compresses, the post lens directly can not be bonded on the pipe tongue.If the size of pipe cap is improper when encapsulation, will grind pipe cap, cause the post lens contamination, make technology loaded down with trivial details, even cause waste.
Summary of the invention
The present invention is directed to problems such as processing step that the packing forms of conventional semiconductor laser TO tube seat exists is loaded down with trivial details when light beam compresses, provide that a kind of technology is simple and direct, reliable quality semiconductor laser TO packaging technology, a kind of semiconductor laser TO encapsulation base of realizing this technology is provided simultaneously.
Semiconductor laser TO packaging technology of the present invention may further comprise the steps:
(1) evaporating solder on the pipe tongue at first routinely with the chip attach of the semiconductor laser centre in pipe tongue side, and makes chip light emitting chamber face concordant with the upper surface of managing tongue, carries out alloy, bonding and photoelectricity test again;
(2) utilize the optical adjustment frame at the upper surface of pipe tongue bonding post lens then, make the post lens be in the top of chip light emitting chamber face, the median plane of post lens is parallel with chip light emitting chamber face, and the distance of post lens centre face and chip light emitting chamber face is 80um～310um;
(3) pipe cap corresponding with TO base model is encapsulated on the TO base.
The semiconductor laser TO that realizes above-mentioned technology encapsulates base by the following technical solutions:
This semiconductor laser TO encapsulation base comprises shell, pipe tongue and pin three parts; Shell is cylinder, there is a groove this cylindrical side, the pipe tongue is located at above the shell, the pipe tongue is semicylinder, the cylindrical dead in line of the axis of this semicylinder and shell, the center line of shell lateral grooves is provided with two grooves of pipe tongue axis symmetry relatively with pipe tongue top plane parallel and perpendicular to the cylindrical axis of shell on the side plane of pipe tongue; Pin comprises detector pin, the anodal pin of laser and negative pole pin, detector pin and laser negative pole pin run through shell and respectively by the groove on the pipe tongue side plane, are provided with the isolated insulation thing between detector pin, laser negative pole pin and shell.
The pipe tongue of above-mentioned TO base is a semicylinder, bigger than traditional hexahedron structure volume, strengthened heat-sinking capability, when optical shaping, can directly clean post lens be bonded in the upper end of pipe tongue, on the TO base, just can finish light beam compression, and be easy to keep the parallel of post lens and chip chamber face.
The present invention directly carries out the light beam compression on the TO base, avoided chip and post lens to be installed in problems such as the post lens contamination, the technology that cause on TO base and the pipe cap are loaded down with trivial details respectively, simplify the beam compression process step of semiconductor laser, improved operating efficiency, guaranteed product quality.
Description of drawings
Fig. 1 is the structural representation of semiconductor laser TO tube seat of the present invention.
Fig. 2 is the principle schematic of semiconductor laser beam compression process of the present invention.
Fig. 3 is the strip light spots schematic diagram after the light beam compression among the present invention.
Fig. 4 is the square focus spot schematic diagram after the light beam compression among the present invention.
Wherein: 1, shell, 2, the pipe tongue, 3, laser negative pole pin, 4, the detector pin, 5, the anodal pin of laser, 6, the shell upper groove, 7, pipe tongue upper groove, 8, chip, 9, the post lens, 10, pipe cap, 11, post lens centre face.
Embodiment
Semiconductor laser TO encapsulation base of the present invention comprises shell 1, pipe tongue 2 and pin three parts as shown in Figure 1.Shell 1 is cylindrical shape, and there is a groove 6 its side, the location of shell when this groove 6 is convenient to encapsulate.Be provided with the pipe tongue 2 that is semicylinder of projection above the shell 1, and the axis of pipe tongue 2 and the dead in line of shell 1.The center line of shell lateral grooves 6 is with pipe tongue top plane parallel and perpendicular to the cylindrical axis of shell.On the side plane of pipe tongue 2, be provided with two grooves 7 of pipe tongue 2 axis symmetries relatively.Pin comprises the anodal pin 5 of laser, negative pole pin 3 and detector pin 4.Detector pin 4 runs through shell 1 also respectively by the groove 7 on the pipe tongue 2 with laser negative pole pin 3.Isolate with megohmite insulant between detector pin 4, laser negative pole pin 3 and the shell 1, prevent to be short-circuited in the application process.
The technical process of utilizing above-mentioned semiconductor laser TO encapsulation base to carry out the semiconductor laser encapsulation is as follows:
As shown in Figure 2, at first routinely at the chip 8 of the side plane middle of the pipe tongue 2 of TO base of the present invention bonding semiconductor laser, and make the luminous chamber face of chip 8 concordant, bonding and photoelectricity test after carrying out alloy, alloy under 180 ℃ with the upper surface of managing tongue 2.Utilize the optical adjustment frame at the upper surface of pipe tongue 2 bonding post lens 9 then, make the median plane 11 of post lens 9 parallel with the luminous chamber face of chip 8, the median plane 11 of post lens 9 is 80um～310um with the distance of chip light emitting chamber face.At last the pipe cap 10 corresponding with TO base model is encapsulated on the pipe tongue 2 of TO base.
The present invention has changed in the existing beam compression process at pipe cap internal bond post lens, has realized the mode of light beam compression by regulating the pipe cap position, directly post lens 9 are bonded on the TO base, guaranteed the parallel of post lens 9 and chip 8 chamber faces, simplify the beam compression process step of semiconductor laser, improved operating efficiency.Utilize the different spacing of optical adjustment frame adjustable column lens and tube core chamber face can obtain as shown in Figure 3 strip light spots after the light beam compression, also can obtain square focus spot shown in Figure 4.
Claims (2)
1. semiconductor laser TO packaging technology is characterized in that: may further comprise the steps:
(1) evaporating solder on the pipe tongue at first routinely with the chip attach of the semiconductor laser centre in pipe tongue side, and makes chip light emitting chamber face concordant with the upper surface of managing tongue, carries out alloy, bonding and photoelectricity test again;
(2) utilize the optical adjustment frame at the upper surface of pipe tongue bonding post lens then, make the post lens be in the top of chip light emitting chamber face, the median plane of post lens is parallel with chip light emitting chamber face, and the distance of post lens centre face and chip light emitting chamber face is 80um～310um;
(3) pipe cap corresponding with TO base model is encapsulated on the TO base.
2. a semiconductor laser TO encapsulation base of realizing the described semiconductor laser TO of claim 1 packaging technology comprises shell, pipe tongue and pin three parts; It is characterized in that: shell is cylinder, there is a groove this cylindrical side, the pipe tongue is located at above the shell, the pipe tongue is semicylinder, the cylindrical dead in line of the axis of this semicylinder and shell, the center line of shell lateral grooves is provided with two grooves of pipe tongue axis symmetry relatively with pipe tongue top plane parallel and perpendicular to the cylindrical axis of shell on the side plane of pipe tongue; Pin comprises detector pin, the anodal pin of laser and negative pole pin, detector pin and laser negative pole pin run through shell and respectively by the groove on the pipe tongue side plane, are provided with the isolated insulation thing between detector pin, laser negative pole pin and shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910017589A CN101626139A (en) | 2009-08-11 | 2009-08-11 | TO packaging technology of semiconductor laser and packaging tube base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910017589A CN101626139A (en) | 2009-08-11 | 2009-08-11 | TO packaging technology of semiconductor laser and packaging tube base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101626139A true CN101626139A (en) | 2010-01-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910017589A Pending CN101626139A (en) | 2009-08-11 | 2009-08-11 | TO packaging technology of semiconductor laser and packaging tube base |
Country Status (1)
| Country | Link |
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| CN (1) | CN101626139A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102035133A (en) * | 2010-11-19 | 2011-04-27 | 中国电子科技集团公司第十三研究所 | Packaging locating device of microchannel lamination laser |
| CN102170087A (en) * | 2011-03-30 | 2011-08-31 | 中国电子科技集团公司第四十五研究所 | A tube base clamp |
| CN101841120B (en) * | 2010-01-22 | 2012-10-10 | 上海高意激光技术有限公司 | TO packaged mini wide temperature solid laser |
| CN111224315A (en) * | 2019-11-28 | 2020-06-02 | 山东华光光电子股份有限公司 | LD red TO laser packaging method of gold-tin process |
| CN113206438A (en) * | 2021-04-30 | 2021-08-03 | 东莞市中镓半导体科技有限公司 | TO packaging structure of mixed wavelength semiconductor laser |
| CN113305125A (en) * | 2020-02-27 | 2021-08-27 | 潍坊华光光电子有限公司 | Device and method for rapidly recycling tube seat of semiconductor laser |
| CN113471808A (en) * | 2021-06-30 | 2021-10-01 | 青岛镭创光电技术有限公司 | Packaging heat sink, semiconductor laser and semiconductor laser module |
-
2009
- 2009-08-11 CN CN200910017589A patent/CN101626139A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101841120B (en) * | 2010-01-22 | 2012-10-10 | 上海高意激光技术有限公司 | TO packaged mini wide temperature solid laser |
| CN102035133A (en) * | 2010-11-19 | 2011-04-27 | 中国电子科技集团公司第十三研究所 | Packaging locating device of microchannel lamination laser |
| CN102035133B (en) * | 2010-11-19 | 2012-03-28 | 中国电子科技集团公司第十三研究所 | Packaging locating device of microchannel lamination laser |
| CN102170087A (en) * | 2011-03-30 | 2011-08-31 | 中国电子科技集团公司第四十五研究所 | A tube base clamp |
| CN111224315A (en) * | 2019-11-28 | 2020-06-02 | 山东华光光电子股份有限公司 | LD red TO laser packaging method of gold-tin process |
| CN113305125A (en) * | 2020-02-27 | 2021-08-27 | 潍坊华光光电子有限公司 | Device and method for rapidly recycling tube seat of semiconductor laser |
| CN113305125B (en) * | 2020-02-27 | 2022-08-12 | 潍坊华光光电子有限公司 | Method for rapidly recycling tube seat of semiconductor laser |
| CN113206438A (en) * | 2021-04-30 | 2021-08-03 | 东莞市中镓半导体科技有限公司 | TO packaging structure of mixed wavelength semiconductor laser |
| CN113471808A (en) * | 2021-06-30 | 2021-10-01 | 青岛镭创光电技术有限公司 | Packaging heat sink, semiconductor laser and semiconductor laser module |
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Open date: 20100113 |