CN105161485A - Integrated packaging shell and semiconductor thermostat and preparation method thereof - Google Patents
Integrated packaging shell and semiconductor thermostat and preparation method thereof Download PDFInfo
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- CN105161485A CN105161485A CN201510449309.3A CN201510449309A CN105161485A CN 105161485 A CN105161485 A CN 105161485A CN 201510449309 A CN201510449309 A CN 201510449309A CN 105161485 A CN105161485 A CN 105161485A
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- solder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Abstract
The invention relates to an integrated packaging shell and semiconductor thermostat and a preparation method thereof, and belongs to field of an infrared detector packaging technology. The integrated packaging shell and semiconductor thermostat comprises a ceramic substrate, multiple semiconductor systems and a ceramic shell which are successively connected. Each semiconductor system comprises a work end welding electrode, a high-temperature welding surface, an upright column, a low-temperature welding surface and a conductive end welding electrode which are successively connected; the lower surface of the ceramic substrate is connected with the work end welding electrode of each semiconductor system; the bottom surface inside the ceramic shell is connected with the conductive end welding electrode in each semiconductor system, and the bottom surface outside the ceramic shell is provided with base pins; and the upright columns are made of semiconductor materials. According to the invention, the ceramic shell is directly taken as a conductive end of the semiconductor thermostat, the dimension and the volume of a packaging product are reduced, at the same time, compared to a conventional integration mode, two heat transfer interfaces are reduced, heat transmission is facilitated, and temperature control is rapid and accurate.
Description
Technical field
The invention belongs to Infrared Detectors encapsulation technology field, be specifically related to a kind of integrative packaging shell and semiconductor thermostat and preparation method thereof.
Background technology
Pyroelectricity uncooled fpa detector is of paramount importance opto-electronic conversion front-end product in infrared application system, also be the core component in infrared weaponry, pyroelectric FPA detector have low in energy consumption, noise bandwidth is little, the advantages such as thermostatic control precision is low needed for detector.Pyroelectricity uncooled fpa detector absorbs the infrared radiation signal focused on pyroelectric detector chip, and polarization intensity changes, thus produces polarization charge, is converted into the temperature-sensitive signal of telecommunication after the integral processing of readout circuit chip.For realizing the reading of the signal of telecommunication, ceramic cartridge provides the optics, electricity and the mechanical interface that meet detector assembly requirement, and loads the air-tightness operational environment (cavity) of detector chip; Semiconductor thermostat provides stable working temperature for detector chip.Usually be all respectively ceramic cartridge, semiconductor thermostat are processed, then utilize solder that semiconductor thermostat is welded direct to ceramic cartridge inwall.The maximum problem of the method is: heat transfer interface is more, is unfavorable for the transmission of heat, cannot ensure accurate temperature control fast.Therefore how overcoming the deficiencies in the prior art is need the problem of solution at present badly in Infrared Detectors encapsulation technology field.
Summary of the invention
For carrying out temperature control quickly and accurately, meeting the operating environment requirements of pyroelectricity uncooled fpa detector, the invention provides a kind of integrative packaging shell and semiconductor thermostat.
Another object of the present invention is the preparation method providing a kind of integrative packaging shell and semiconductor thermostat.
The chip loading surface of detector assembly, assembly constant temperature and optics, electricity and mechanical interface are provided simultaneously.
The technical solution used in the present invention is as follows:
Integrative packaging shell and semiconductor thermostat, comprise the ceramic substrate, semiconductor system and the ceramic cartridge that are connected successively;
Described semiconductor system has multiple, and each semiconductor system comprises working end welding electrode connected successively, high-temperature soldering face, grain post, eutectic welding junction and heat conduction end welding electrode;
Ceramic substrate is as the working end of semiconductor thermostat, and the upper surface of ceramic substrate is as the loading surface of detector chip, and the lower surface of ceramic substrate is connected with the working end welding electrode in semiconductor system;
Ceramic cartridge is directly as the heat conduction end of semiconductor thermostat, and ceramic cartridge inner bottom surface is connected with the heat conduction end welding electrode in semiconductor system, and the outside bottom surface of ceramic cartridge is provided with the pin that can be connected with outside;
Described grain post is semi-conducting material.
Further, preferably the upper surface of ceramic substrate is as the loading surface of chip, requires evenness≤0.08mm, with the loading surface providing chip smooth.
Further, preferably the depth of parallelism of the upper surface of ceramic substrate and ceramic cartridge inner bottom surface all≤0.25mm, to ensure chip focal plane requirement in optical imaging systems.
Further, preferably described grain post is ternary Bi
2te
3-Sb
2te
3-Sb
2se
3solid solution alloy.
Further, preferably, the outside bottom surface of ceramic cartridge is provided with multiple pin.
Above-mentioned integrative packaging shell and the preparation method of semiconductor thermostat, comprise the following steps:
Step (1), the preparation in high-temperature soldering face: on the surface of docking mutually between working end welding electrode and grain post, smear ZnCl respectively
2after scaling powder and solder, the grain cylinder scribbling solder is accurately pressed in and scribbles ZnCl
2on the welding electrode face, working end of scaling powder, be then heated to the fusing point of solder, keep Temperature fall after 5-10 minute, make solder and ZnCl
2scaling powder forms high-temperature soldering face, and the THICKNESS CONTROL in high-temperature soldering face is at 0.1mm ± 0.02mm;
Step (2), the preparation of eutectic welding junction: on the surface of docking mutually between heat conduction end welding electrode and grain post, smear ZnCl respectively
2scaling powder and solder, be accurately pressed in the grain cylinder scribbling solder and scribble ZnCl
2on the heat conduction end welding electrode face of scaling powder, be then heated to the fusing point of solder, keep Temperature fall after 5-10 minute, make solder and ZnCl
2scaling powder forms eutectic welding junction, and the THICKNESS CONTROL of eutectic welding junction is at 0.1mm ± 0.02mm;
Step (3), the preparation of working end welding electrode: in the mode of ceramic substrate lower surface by plating, forms the working end welding electrode that thickness is 1 μm ~ 2 μm;
Step (4), the preparation of heat conduction end welding electrode: in the mode of ceramic cartridge inner bottom surface by plating, forms the heat conduction end welding electrode that thickness is 1 μm ~ 2 μm;
Thus complete the preparation of integrative packaging shell and semiconductor thermostat.
The fusing point of the solder of described step (2) is lower than the fusing point of the solder of step (1).
Those skilled in the art are to be understood that, representated by the solder of step (1) solder and step (2) is two kinds of conventional different solders, do not indicate its concrete composition especially, as long as meet the fusing point of fusing point lower than the solder of step (1) of the solder of step (2).
Further, the solder of preferably described step (1) is SbBi, and the solder of step (2) is SbSn.
Further, the solder of preferably described step (1) is SbSn, and the solder of step (2) is SnBi.
The described working end preferred material of welding electrode is Au.
The preferred material of described heat conduction end welding electrode is Au.
High-temperature soldering face of the present invention realizes the synthesis of ceramic substrate and grain post one end, and eutectic welding junction realizes the synthesis of the grain post other end and ceramic cartridge, finally makes encapsulating package and semiconductor thermostat be integrated.
compared with prior art, its beneficial effect is in the present invention:
The invention provides a kind of integrative packaging shell and semiconductor thermostat and preparation method thereof, ceramic cartridge is directly as the heat conduction end of semiconductor thermostat, not only reduce size and the volume of encapsulating products, simultaneously compared with traditional integration mode, 2 heat transfer interfaces are lacked, be conducive to heat transmission, quick accurate temperature controlling.Compared with traditional method, thermal conductance reduces about 50%, wants fast more than 1 times compared with traditional temperature control method.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of integrative packaging shell of the present invention and semiconductor thermostat;
Fig. 2 is that step of the present invention (1) implements schematic diagram;
Fig. 3 synthesizes schematic diagram with welding of grain post for the ceramic substrate after completing step of the present invention (1);
Fig. 4 is that step of the present invention (2) implements schematic diagram;
Wherein, 1, ceramic substrate; The upper surface of 1a, ceramic substrate; The lower surface of 1b, ceramic substrate; 2, working end welding electrode; 3, high-temperature soldering face; 4, grain post; 5, eutectic welding junction; 6, heat conduction end welding electrode; 7, ceramic cartridge; 8, pin; 9, ZnCl
2scaling powder; 10, solder a; 11, solder b.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail.
It will be understood to those of skill in the art that the following example only for illustration of the present invention, and should not be considered as limiting scope of the present invention.Unreceipted concrete technology or condition person in embodiment, according to the technology described by the document in this area or condition or carry out according to product description.Agents useful for same or the unreceipted production firm person of instrument, being can by buying the conventional products obtained.
Solder SbBi, SbSn and SnBi in embodiment are purchased from Shenzhen laird Co., Ltd.
embodiment 1
As shown in Figure 1, the present invention is according to semiconductor thermostat operation principle, and Design of Mechanical Structure principle, designs a kind of new integrative packaging shell and semiconductor thermostat, comprises ceramic substrate 1, semiconductor system and the ceramic cartridge 7 be connected successively;
Described semiconductor system has multiple, and each semiconductor system comprises working end welding electrode 2 connected successively, high-temperature soldering face 3, grain post 4, eutectic welding junction 5 and heat conduction end welding electrode 6; Semiconductor system shown in Fig. 1 has 5, but is not limited thereto.
Ceramic substrate 1 is as the working end of semiconductor thermostat, and upper surface 1a is as the loading surface of detector chip, and the lower surface 1b of ceramic substrate is connected with the working end welding electrode 2 in semiconductor system;
Ceramic cartridge 7 is directly as the heat conduction end of semiconductor thermostat, and ceramic cartridge 7 inner bottom surface is connected with the heat conduction end welding electrode 6 in semiconductor system, and the outside bottom surface of ceramic cartridge 7 is provided with multiple pin 8 that can be connected with outside; Pin 8 shown in Fig. 1 has two, but is not limited thereto.
Described grain post 4 is semi-conducting material, is ternary Bi
2te
3-Sb
2te
3-Sb
2se
3solid solution alloy.
The upper surface 1a evenness≤0.08mm of ceramic substrate 1.The upper surface 1a of ceramic substrate 1 and the depth of parallelism of ceramic cartridge 7 inner bottom surface all≤0.25mm.
The preparation method of integrative packaging shell of the present invention and semiconductor thermostat, comprises the following steps:
Step (1), the preparation in high-temperature soldering face 3: on the surface of docking mutually between working end welding electrode 2 and grain post 4, smear ZnCl respectively
2scaling powder 9 and solder 10(and solder a) after, as shown in Figure 2,4, the grain post scribbling solder 10 is accurately pressed in and scribbles ZnCl
2on the working end welding electrode 2 of scaling powder 9, be then heated to the fusing point of solder a, keep Temperature fall after 5 minutes, make solder 10 and ZnCl
2scaling powder 9 forms high-temperature soldering face 3, and the THICKNESS CONTROL in high-temperature soldering face 3 is at 0.1mm ± 0.02mm; As shown in Figure 3;
Step (2), the preparation of eutectic welding junction 5: on the surface of docking mutually between heat conduction end welding electrode 6 and grain post 4, smear ZnCl respectively
2scaling powder 9 and solder 11(and solder b), as shown in Figure 4,4, the grain post scribbling solder 11 is accurately pressed in and scribbles ZnCl
2on the heat conduction end welding electrode 6 of scaling powder 9, be then heated to the fusing point of solder 11, keep Temperature fall after 5 minutes, make solder 11 and ZnCl
2scaling powder 9 forms eutectic welding junction 5, and the THICKNESS CONTROL of eutectic welding junction 5 is at 0.1mm ± 0.02mm;
The solder 11(of described step (2) and solder b) fusing point lower than the solder 10(of step (1) and solder fusing point a), described solder 10 is SbBi(fusing point 260 DEG C), solder 11 is SbSn(fusing point 230 DEG C);
Step (3), the preparation of working end welding electrode 2: in the mode of ceramic substrate 1 lower surface 1b by plating, forms the working end welding electrode 2 that thickness is 1 μm; The preferred material of working end welding electrode 2 is Au;
Step (4), the preparation of heat conduction end welding electrode 6: in the mode of ceramic cartridge 7 inner bottom surface by plating, form the heat conduction end welding electrode 6 that thickness is 1 μm, the preferred material of heat conduction end welding electrode 6 is Au, thus complete the preparation of integrative packaging shell and semiconductor thermostat, as shown in Figure 1.
embodiment 2
As shown in Figure 1, the present invention is according to semiconductor thermostat operation principle, and Design of Mechanical Structure principle, designs a kind of new integrative packaging shell and semiconductor thermostat, comprises ceramic substrate 1, semiconductor system and the ceramic cartridge 7 be connected successively;
Described semiconductor system has multiple, and each semiconductor system comprises working end welding electrode 2 connected successively, high-temperature soldering face 3, grain post 4, eutectic welding junction 5 and heat conduction end welding electrode 6; Semiconductor system shown in Fig. 1 has 5, but is not limited thereto.
Ceramic substrate 1 is as the working end of semiconductor thermostat, and upper surface 1a is as the loading surface of detector chip, and the lower surface 1b of ceramic substrate is connected with the working end welding electrode 2 in semiconductor system;
Ceramic cartridge 7 is directly as the heat conduction end of semiconductor thermostat, and ceramic cartridge 7 inner bottom surface is connected with the heat conduction end welding electrode 6 in semiconductor system, and the outside bottom surface of ceramic cartridge 7 is provided with multiple pin 8 that can be connected with outside; Pin 8 shown in Fig. 1 has two, but is not limited thereto.
Described grain post 4 is semi-conducting material, is ternary Bi
2te
3-Sb
2te
3-Sb
2se
3solid solution alloy.
The upper surface 1a evenness≤0.08mm of ceramic substrate 1.The upper surface 1a of ceramic substrate 1 and the depth of parallelism of ceramic cartridge 7 inner bottom surface all≤0.25mm.
The integrative packaging shell of the present embodiment and the preparation method of semiconductor thermostat, comprise the following steps:
Step (1), the preparation in high-temperature soldering face 3: on the surface of docking mutually between working end welding electrode 2 and grain post 4, smear ZnCl respectively
2scaling powder 9 and solder 10(and solder a) after, as shown in Figure 2,4, the grain post scribbling solder 10 is accurately pressed in and scribbles ZnCl
2on the working end welding electrode 2 of scaling powder 9, be then heated to the fusing point of solder a, keep Temperature fall after 10 minutes, make solder 10 and ZnCl
2scaling powder 9 forms high-temperature soldering face 3, and the THICKNESS CONTROL in high-temperature soldering face 3 is at 0.1mm ± 0.02mm; As shown in Figure 3;
Step (2), the preparation of eutectic welding junction 5: on the surface of docking mutually between heat conduction end welding electrode 6 and grain post 4, smear ZnCl respectively
2scaling powder 9 and solder 11(and solder b), as shown in Figure 4,4, the grain post scribbling solder 11 is accurately pressed in and scribbles ZnCl
2on the heat conduction end welding electrode 6 of scaling powder 9, be then heated to the fusing point of solder 11, keep Temperature fall after 10 minutes, make solder 11 and ZnCl
2scaling powder 9 forms eutectic welding junction 5, and the THICKNESS CONTROL of eutectic welding junction 5 is at 0.1mm ± 0.02mm;
The solder 11(of described step (2) and solder b) fusing point lower than the solder 10(of step (1) and solder fusing point a), described solder 10 is SbSn(fusing point 230 DEG C), solder 11 is SnBi(fusing point 200 DEG C);
Step (3), the preparation of working end welding electrode 2: in the mode of ceramic substrate 1 lower surface 1b by plating, forms the working end welding electrode 2 that thickness is 2 μm; The preferred material of working end welding electrode 2 is Au;
Step (4), the preparation of heat conduction end welding electrode 6: in the mode of ceramic cartridge 7 inner bottom surface by plating, form the heat conduction end welding electrode 6 that thickness is 2 μm, the preferred material of heat conduction end welding electrode 6 is Au, thus complete the preparation of integrative packaging shell and semiconductor thermostat, as shown in Figure 1.
More than show and describe general principle of the present invention, principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof.
Claims (10)
1. integrative packaging shell and semiconductor thermostat, is characterized in that, comprises the ceramic substrate, semiconductor system and the ceramic cartridge that are connected successively;
Described semiconductor system has multiple, and each semiconductor system comprises working end welding electrode connected successively, high-temperature soldering face, grain post, eutectic welding junction and heat conduction end welding electrode;
The lower surface of ceramic substrate is connected with the working end welding electrode in semiconductor system; Ceramic cartridge inner bottom surface is connected with the heat conduction end welding electrode in semiconductor system, and the outside bottom surface of ceramic cartridge is provided with pin;
Described grain post is semi-conducting material.
2. integrative packaging shell according to claim 1 and semiconductor thermostat, is characterized in that, the upper surface evenness≤0.08mm of ceramic substrate.
3. integrative packaging shell according to claim 1 and semiconductor thermostat, is characterized in that, the upper surface of ceramic substrate and the depth of parallelism of ceramic cartridge inner bottom surface all≤0.25mm.
4. integrative packaging shell according to claim 1 and semiconductor thermostat, is characterized in that, described grain post is ternary Bi
2te
3-Sb
2te
3-Sb
2se
3solid solution alloy.
5. integrative packaging shell according to claim 1 and semiconductor thermostat, is characterized in that, described, and the outside bottom surface of ceramic cartridge is provided with multiple pin.
6. the integrative packaging shell described in claim 1-5 any one and the preparation method of semiconductor thermostat, is characterized in that, comprise the following steps:
Step (1), the preparation in high-temperature soldering face: on the surface of docking mutually between working end welding electrode and grain post, smear ZnCl respectively
2after scaling powder and solder, the grain cylinder scribbling solder is accurately pressed in and scribbles ZnCl
2on the welding electrode face, working end of scaling powder, be then heated to the fusing point of solder, keep Temperature fall after 5-10 minute, make solder and ZnCl
2scaling powder forms high-temperature soldering face, and the THICKNESS CONTROL in high-temperature soldering face is at 0.1mm ± 0.02mm;
Step (2), the preparation of eutectic welding junction: on the surface of docking mutually between heat conduction end welding electrode and grain post, smear ZnCl respectively
2scaling powder and solder, be accurately pressed in the grain cylinder scribbling solder and scribble ZnCl
2on the heat conduction end welding electrode face of scaling powder, be then heated to the fusing point of solder, keep Temperature fall after 5-10 minute, make solder and ZnCl
2scaling powder forms eutectic welding junction, and the THICKNESS CONTROL of eutectic welding junction is at 0.1mm ± 0.02mm;
Step (3), the preparation of working end welding electrode: in the mode of ceramic substrate lower surface by plating, forms the working end welding electrode that thickness is 1 μm ~ 2 μm;
Step (4), the preparation of heat conduction end welding electrode: in the mode of ceramic cartridge inner bottom surface by plating, forms the heat conduction end welding electrode that thickness is 1 μm ~ 2 μm;
Thus complete the preparation of integrative packaging shell and semiconductor thermostat.
7. the preparation method of integrative packaging shell according to claim 6 and semiconductor thermostat, is characterized in that the fusing point of the fusing point of the solder of described step (2) lower than the solder of step (1).
8. the preparation method of integrative packaging shell according to claim 6 and semiconductor thermostat, is characterized in that, the solder of described step (1) is SbBi, and the solder of step (2) is SbSn.
9. the preparation method of integrative packaging shell according to claim 6 and semiconductor thermostat, is characterized in that, the solder of described step (1) is SbSn, and the solder of step (2) is SnBi.
10. the preparation method of integrative packaging shell according to claim 6 and semiconductor thermostat, is characterized in that, the material of described working end welding electrode, heat conduction end welding electrode is Au.
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| CN105731356A (en) * | 2016-04-29 | 2016-07-06 | 合肥芯福传感器技术有限公司 | Integrated temperature measurement type ceramic packaging tube shell |
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| Publication number | Publication date |
|---|---|
| CN105161485B (en) | 2017-12-26 |
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