CN214843625U - Optical power meter based on semiconductor thermoelectric generation piece - Google Patents
Optical power meter based on semiconductor thermoelectric generation piece Download PDFInfo
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- CN214843625U CN214843625U CN202120420804.2U CN202120420804U CN214843625U CN 214843625 U CN214843625 U CN 214843625U CN 202120420804 U CN202120420804 U CN 202120420804U CN 214843625 U CN214843625 U CN 214843625U
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Abstract
The utility model discloses an optical power meter based on semiconductor thermoelectric generation piece, including thermoelectric generation piece, light absorption collection heat plate, potentiometre and voltmeter, thermoelectric generation piece includes hot junction plate spare, thermocouple group and cold junction plate spare, and hot junction plate spare sets up the first side at the thermocouple group, and the cold junction plate spare sets up the second side at the thermocouple group; the light absorption heat collection plate is arranged on one side, far away from the thermocouple group, of the hot end plate and used for absorbing incident light to generate heat and conducting the heat to the hot end plate; the potentiometer is provided with a first electric connection end, a second electric connection end and a voltage regulation end, the first electric connection end and the second electric connection end are respectively connected with a positive electrode lead and a negative electrode lead of the thermocouple group, the first end of the voltmeter is connected with the positive electrode lead or the negative electrode lead of the thermocouple group, and the second end of the voltmeter is connected with the voltage regulation end lead of the potentiometer. The optical power meter can read out the incident light power without a signal amplification circuit, has a simple structure and lower cost, and improves the convenience of production.
Description
Technical Field
The utility model relates to an optical power meter especially relates to an optical power meter based on semiconductor thermoelectric generation piece.
Background
At present, the application of lasers in the fields of communication, medical treatment, industrial manufacturing and the like is more and more extensive. In the process of developing, producing and applying the laser, the step of measuring and calibrating the power of the laser is an essential step. In the prior art, an optical power meter is usually used to test the power of a continuous laser or the average power of a pulse laser over a certain period of time.
The optical power meter generally comprises a detector, a signal amplifying circuit, an analog-digital conversion unit, a data processing unit and a display device. According to different measurement principles, laser detectors mainly include two types: photoelectric type laser detectors and pyroelectric type laser detectors. At present, a thermoelectric laser power detector with a good detection function adopts a thermopile structure, and heat energy is converted into electric energy based on the Seebeck effect, so that the detection of laser power is realized. When laser to be detected irradiates the center of a detection area, high temperature and high heat are locally caused, then the heat is diffused to the edge to form a heat gradient field radiating from the center to the edge, one end of a thermocouple close to the center is a hot end, the other end of the thermocouple far away from the center is a cold end, and a cooling device such as a fan is usually loaded on one side of the cold end to keep the temperature of the thermocouple at the ambient temperature. The thermocouple causes junction potential difference due to the temperature difference of the cold end and the hot end. The thermocouples form a thermoelectric stack in a series connection mode, total temperature difference electromotive force after the thermocouples are overlapped is measured, and the power of the laser to be detected is obtained according to the corresponding relation between the temperature difference electromotive force and the laser power.
In the optical power meter, the preparation process of the thermopile is complex, inconvenient to produce and manufacture and high in cost; in addition, in the laser detector using the thermopile, in order to display the power of incident light, it is necessary to power-amplify the output voltage of the thermopile via a power amplification circuit and a calibration circuit, and the structure is relatively complicated.
Disclosure of Invention
The utility model aims to solve the technical problem that an optical power meter based on semiconductor thermoelectric generation piece is provided, the structure of optical power meter is simplified to improve the convenience of optical power meter production.
In order to realize the technical purpose, the utility model adopts the following technical scheme:
the utility model provides an optical power meter based on semiconductor thermoelectric generation piece, include:
the thermoelectric generation piece comprises a hot end plate, a thermocouple group and a cold end plate, wherein the hot end plate is arranged on the first side of the thermocouple group, and the cold end plate is arranged on the second side of the thermocouple group; the first end of the thermocouple group is a positive electrode, and the second end of the thermocouple group is a negative electrode;
the light absorption heat collection plate is arranged on one side, far away from the thermocouple group, of the hot end plate and is used for absorbing incident light to generate heat and conducting the heat to the hot end plate;
the potentiometer is provided with a first electric connection end, a second electric connection end and a voltage regulation end, the first electric connection end and the second electric connection end are respectively connected with a positive electrode lead and a negative electrode lead of the thermocouple group, the first end of the voltmeter is connected with the positive electrode lead or the negative electrode lead of the thermocouple group, and the second end of the voltmeter is connected with the voltage regulation end lead of the potentiometer;
the heat dissipation piece is arranged on one side, far away from the thermocouple group, of the cold end plate and used for absorbing heat conducted from the hot end plate to the cold end plate so that the cold end plate is cooled rapidly.
Preferably, the light absorption and heat collection plate and the hot end plate of the thermoelectric generation piece can be replaced by an integrated black material with better heat conductivity and poorer electric conductivity.
Preferably, the light absorption and heat collection plate and the hot end plate of the thermoelectric generation piece are integrated plates made of any one of black silicon carbide, black silicon nitride and black silicon wafers.
Preferably, one side of the light absorption and collection heat plate far away from the hot end plate is dark, and the dark color at least comprises black.
Preferably, the light absorption and heat collection plate is a plate-shaped structure made of a graphite sheet, a graphene radiating fin, a black silicon carbide sheet, a black silicon sheet or an aluminum alloy sheet with the surface oxidized into black.
Preferably, the light absorption heat collecting plate is adhered or welded on the hot end plate; the heat dissipation piece is adhered or welded on the cold end plate.
Preferably, the heat capacity of the heat dissipation member is much greater than the sum of the heat capacities of the light absorption and collection heat plate member and the thermoelectric generation sheet.
Preferably, the ratio of the heat capacity of the heat dissipation member to the sum of the heat capacities of the light absorption and collection heat plate member and the thermoelectric generation sheet is greater than the reciprocal of the absolute value of the system measurement error.
Preferably, the thermocouple group comprises a plurality of semiconductor groups and a plurality of copper electrode plates, the semiconductor groups comprise an N-type semiconductor and a P-type semiconductor, the semiconductor groups are sequentially connected in series through the copper electrode plates, and the copper electrode plates at the head end and the tail end form the positive electrode and the negative electrode;
the N-type semiconductor and the P-type semiconductor are made of bismuth telluride semiconductor materials;
the hot end plate is of a plate-shaped structure made of alumina ceramics, aluminum nitride ceramics, an aluminum substrate or a copper substrate; the cold end plate is of a plate-shaped structure made of alumina ceramics, aluminum nitride ceramics, an aluminum substrate or a copper substrate.
Preferably, the decimal point position of the voltmeter is adjustable, so that the reading adjustment is facilitated.
Compared with the prior art, the utility model, beneficial effect as follows:
the utility model provides an optical power meter based on semiconductor thermoelectric generation piece, it absorbs the incident light and turns into the heat through light absorption heat-collecting plate spare, then, gives the hot junction plate piece of thermoelectric generation piece with the heat conduction, and heat energy flows to the cold junction plate piece from the hot junction plate piece of thermoelectric generation piece to produce induced voltage at the both ends of thermoelectric generation piece through the seebeck effect. After stable heat conduction is achieved, the induced voltage is approximately in direct proportion to the incident light power, a large output voltage can be obtained by selecting a temperature difference power generation sheet with appropriate parameters, after voltage division is carried out by a potentiometer, a voltage value can be read out by directly measuring a voltmeter without a signal amplification circuit, the voltage and the incident light power of the voltmeter can be gradually corrected by using the potentiometer, meanwhile, the decimal point position displayed by the voltmeter is adjusted, nominal reading of the voltmeter can correspond to actual incident light power one to one, and the reading of the voltmeter is the incident light power. This optical power meter realizes the measurement of incident optical power based on the thermoelectric generation piece, does not need signal amplification circuit just can read out incident optical power, simple structure, and the cost is lower to convenient equipment, during the equipment, only need with light absorption collect hot plate spare, radiating piece and thermoelectric generation piece welding or paste the dress, then with the output of thermoelectric generation piece with potentiometre and voltmeter wire be connected can, thereby improved the convenience of production.
Drawings
Fig. 1 is a schematic structural diagram of an optical power meter provided by the present invention;
fig. 2 is a schematic structural view of the temperature difference power generation sheet in fig. 1.
In the drawings, each reference numeral denotes:
1. a thermoelectric power generation sheet; 11. a hot end plate member; 12. a thermocouple group; 13. a cold end plate; 121. a semiconductor group; 122. a copper electrode sheet; 1211. an N-type semiconductor; 1212. a P-type semiconductor; 2. a light absorbing heat collecting plate; 3. a potentiometer; 4. a voltmeter; 5. a heat sink.
Detailed Description
The technical solution of the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, the embodiment of the present invention provides an optical power meter based on semiconductor thermoelectric generation chip, including: the thermoelectric generation piece 1, the light absorption heat collection plate 2, the potentiometer 3, the voltmeter 4 and the heat dissipation piece 5.
The thermoelectric generation piece 1 (also called a semiconductor refrigeration piece) comprises a hot-end plate 11, a thermocouple group 12 and a cold-end plate 13, wherein the hot-end plate 11 is arranged on a first side of the thermocouple group 12, and the cold-end plate 13 is arranged on a second side of the thermocouple group 12; the first end of the thermocouple group 12 is a positive electrode and the second end of the thermocouple group 12 is a negative electrode. The light absorbing and heat collecting plate member 2 is disposed on the side of the hot end plate member 11 away from the thermocouple group 12, and is configured to absorb incident light to generate heat and to conduct the heat to the hot end plate member 11. Heat sink 5 is disposed on the cold end plate 13 on a side thereof remote from the thermocouple assembly 12 for absorbing heat conducted from the hot end plate 11 to the cold end plate 13 to rapidly cool the cold end plate 13. The potentiometer 3 is provided with a first electric connection end, a second electric connection end and a voltage regulation end, and the first electric connection end and the second electric connection end are respectively connected with a positive electrode lead and a negative electrode lead of the thermocouple group 12. The first end of the voltmeter 4 is connected with the negative electrode (or positive electrode) lead of the thermocouple group 12, and the second end of the voltmeter 4 is connected with the voltage regulating end lead of the potentiometer 3. Preferably, the decimal point position of voltmeter 4 is adjustable to facilitate reading adjustment. The optical power meter realizes the measurement of the incident light power based on the thermoelectric generation sheet 1, can read out the incident light power without a signal amplification circuit, and has simple structure and lower cost.
Specifically, referring to fig. 1 and 2, a thermoelectric generation chip 1 (also called a semiconductor refrigeration chip) includes a hot-end plate 11, a thermocouple group 12, and a cold-end plate 13, where the hot-end plate 11 is disposed on a first side of the thermocouple group 12, and the cold-end plate 13 is disposed on a second side of the thermocouple group 12; the first end of the thermocouple group 12 is a positive electrode and the second end of the thermocouple group 12 is a negative electrode.
The thermocouple group 12 comprises a plurality of semiconductor groups 121 and a plurality of copper electrode plates 122, the semiconductor groups 121 comprise an N-type semiconductor 1211 and a P-type semiconductor 1212, the plurality of semiconductor groups 121 are sequentially connected in series through the plurality of copper electrode plates 122, and the copper electrode plates 122 at the head end and the tail end form a positive electrode and a negative electrode. In this embodiment, the N-type semiconductor 1211 and the P-type semiconductor 1212 are each made of a bismuth telluride semiconductor material.
The hot end plate 11 and the cold end plate 13 are both made of alumina ceramics, aluminum nitride ceramics, aluminum substrates or copper substrates into plate-shaped structures. Therefore, the heat conduction effect between the hot end plate 11 and the cold end plate 13 is ensured by using the material with better heat conductivity.
As shown in fig. 1, the light absorbing and heat collecting plate member 2 is disposed on the side of the hot side plate member 11 away from the thermocouple group 12, and absorbs incident light to generate heat and can conduct the heat to the hot side plate member 11. The light absorbing and heat collecting plate member 2 may be bonded or welded to the hot end plate member 11. Specifically, materials such as silica gel, metal epoxy glue, soldering tin, heat conduction silicone grease can be pasted or welded, so that the light absorption heat collection plate 2 is perfectly attached to the hot end plate 11, and the heat conduction efficiency is improved.
The side of the light absorbing and heat collecting plate 2 far away from the hot end plate 11 is dark. The side of the light absorption and heat collection plate 2 for absorbing incident light is dark, so that the reflection of light can be reduced to the greatest extent, and the best light absorption effect is ensured. The dark color may be black, brown, gray, etc., with black being most preferred. It will be appreciated that in the above described arrangement it is possible for the light absorbing heat collecting plate member 2 itself to be of a dark colour overall or for the side of the light absorbing heat collecting plate member 2 remote from the hot end plate member 11 to be coated with a dark coloured coating.
Preferably, the light absorbing and heat collecting plate 2 may be a plate made of black material with good thermal conductivity and poor electrical conductivity, for example, the light absorbing and heat collecting plate 2 may be a plate-shaped structure made of graphite sheet, graphene heat sink, black silicon carbide sheet, black silicon sheet or aluminum alloy sheet with surface oxidized to black. The light absorption and heat collection plate 2 is black, so that the optimal light absorption effect can be ensured; the heat conduction of the light absorption and collection plate 2 is better, so that the energy generated by the incident light source can be completely absorbed; finally, the light absorbing and heat collecting plate 2 is plate-shaped, so that the plate-shaped heat collecting plate can be perfectly attached to the heat end plate 11 which is also plate-shaped, and the heat conduction efficiency is improved.
Alternatively, the light-absorbing heat collecting plate 2 and the hot-side plate 11 of the thermoelectric generation element 1 may be replaced by a black material having good thermal conductivity and poor electrical conductivity. For example, an integrated plate made of black silicon carbide, black silicon nitride, black silicon wafer, or the like is used as the hot side plate 11 of the thermoelectric generation element 1, and the hot side plate 11 of the thermoelectric generation element 1 can also serve as the light absorbing and collecting heat plate 2.
As shown in fig. 1, heat sink 5 is disposed on the side of cold end plate 13 remote from thermocouple group 12 to absorb heat conducted from hot end plate 11 to cold end plate 13 to rapidly cool cold end plate 13. Thus, after heat is conducted from the hot end plate 11 to the cold end plate 13, the cold end plate 13 can be rapidly cooled by the heat sink 5, thereby facilitating heat conduction. The specific structure of the heat sink 5 is not limited, and may be an air-cooled structure or a water-cooled structure.
Preferably, the heat sink 5 is glued or welded to the cold end plate 13. Specifically, can paste or weld through materials such as silica gel, metal epoxy, soldering tin, heat conduction silicone grease to make radiating piece 5 and 13 perfect laminating of cold junction plate, with the radiating efficiency who improves cold junction plate 13, and then be favorable to improving heat conduction efficiency.
In the above structure, the heat capacity of the heat sink 5 is much larger than the sum of the heat capacities of the light absorbing and collecting heat plate member 2 and the thermoelectric generation element 1, so as to ensure that almost all the heat can flow through the thermocouple group 12, thereby ensuring the measurement accuracy. Preferably, a ratio of the heat capacity of the heat radiating member 5 to the sum of the heat capacities of the light-absorbing heat collecting plate member 2 and the thermoelectric generation element 1 is larger than the reciprocal of the absolute value of the system measurement error. If the system measurement error requires ± 2%, it is recommended that the heat capacity of the heat radiating member 5 is more than 50 times the sum of the heat capacities of the light absorbing and collecting heat plate members 2 and the thermoelectric generation elements 1.
When the power meter is used specifically, the light absorption and collection heat plate 2 absorbs incident light and converts the incident light into heat, then the heat is conducted to the hot end plate 11 of the thermoelectric generation piece 1, and the heat flows from the hot end plate 11 of the thermoelectric generation piece 1 to the cold end plate 13 and is radiated out by the heat radiating piece 5; in the above-described heat conduction process, an induced voltage (i.e., an output voltage) is generated across the thermoelectric generation element 1 by the seebeck effect. When stable heat conduction is achieved, the induced voltage of the thermoelectric generation chip 1 is approximately proportional to the incident light power. By selecting the thermoelectric generation piece 1 with proper parameters, the thermoelectric generation piece 1 can generate larger output voltage. After the output voltage of the thermoelectric generation piece 1 is divided by the potentiometer 3, the nominal reading of the voltmeter 4 can be in one-to-one correspondence with the actual incident light power by adjusting the position of a decimal point displayed by the voltmeter 4, and the reading of the voltmeter 4 is the incident light power, so that the voltage value can be directly measured through the voltmeter 4 without a signal amplification circuit to be read. Examples are as follows: under the condition of 1200mW incident light power, assuming that the thermoelectric generation piece 1 outputs 300mV, a potentiometer 3 is used for dividing voltage by 40%, a voltmeter 4 is used for reading out the voltage of 120mV, and simultaneously, a decimal point of the voltmeter 4 is adjusted backwards to obtain 1200mV reading, and the 1200 reading corresponds to the 1200mW incident light power one by one.
To sum up, the utility model provides an optical power meter based on semiconductor thermoelectric generation piece has advantages such as signal amplification, reaction are rapid exempted from. Moreover, the power meter is simple in structure and low in cost, and during production and manufacturing, the light absorption heat collection plate 2, the heat dissipation piece 5 and the temperature difference power generation piece 1 are only required to be welded or mounted, and then the output end of the temperature difference power generation piece 1 is connected with the potentiometer 3 and the voltmeter 4 through leads, so that the production convenience is improved.
It is right above the utility model provides an optical power meter based on semiconductor thermoelectric generation piece has carried out detailed explanation. Any obvious modifications thereto, which would occur to one skilled in the art and which would not depart from the essence of the invention, would constitute a violation of the patent rights and would bear corresponding legal obligations.
Claims (10)
1. An optical power meter based on semiconductor thermoelectric generation piece, its characterized in that includes:
the thermoelectric generation piece comprises a hot end plate, a thermocouple group and a cold end plate, wherein the hot end plate is arranged on the first side of the thermocouple group, and the cold end plate is arranged on the second side of the thermocouple group; the first end of the thermocouple group is a positive electrode, and the second end of the thermocouple group is a negative electrode;
the light absorption heat collection plate is arranged on one side, far away from the thermocouple group, of the hot end plate and is used for absorbing incident light to generate heat and conducting the heat to the hot end plate;
the potentiometer is provided with a first electric connection end, a second electric connection end and a voltage regulation end, the first electric connection end and the second electric connection end are respectively connected with a positive electrode lead and a negative electrode lead of the thermocouple group, the first end of the voltmeter is connected with the positive electrode lead or the negative electrode lead of the thermocouple group, and the second end of the voltmeter is connected with the voltage regulation end lead of the potentiometer;
the heat dissipation piece is arranged on one side, far away from the thermocouple group, of the cold end plate and used for absorbing heat conducted from the hot end plate to the cold end plate so that the cold end plate is cooled rapidly.
2. The optical power meter of claim 1, wherein:
the light absorption and heat collection plate and the hot end plate of the thermoelectric generation plate can be replaced by an integrated black material with better heat conductivity and poorer electric conductivity.
3. The optical power meter of claim 2, wherein:
the light absorption and collection heat plate and the heat end plate are integrated plates made of any one of black silicon carbide, black silicon nitride and black silicon wafers.
4. The optical power meter of claim 1, wherein:
one side of the light absorption and collection heat plate far away from the heat end plate is dark.
5. The optical power meter of claim 4, wherein:
the light absorption and heat collection plate is of a plate-shaped structure made of graphite flakes, graphene radiating fins, black silicon carbide chips, black silicon chips or aluminum alloy sheets with black surfaces oxidized into black.
6. The optical power meter of claim 1, wherein:
the light absorption heat collection plate is adhered or welded on the hot end plate; the heat dissipation piece is adhered or welded on the cold end plate.
7. The optical power meter of claim 1, wherein:
the heat capacity of the heat dissipation part is far larger than the sum of the heat capacities of the light absorption and collection heat plate part and the temperature difference power generation sheet;
the ratio of the heat capacity of the heat dissipation part to the sum of the heat capacities of the light absorption and collection heat plate part and the temperature difference power generation plate is larger than the reciprocal of the absolute value of the system measurement error.
8. The optical power meter of claim 1, wherein:
the thermocouple group comprises a plurality of semiconductor groups and a plurality of copper electrode plates, the semiconductor groups comprise an N-type semiconductor and a P-type semiconductor, the semiconductor groups are sequentially connected in series through the copper electrode plates, and the copper electrode plates at the head end and the tail end form the positive electrode and the negative electrode;
the N-type semiconductor and the P-type semiconductor are made of bismuth telluride semiconductor materials.
9. The optical power meter of claim 1, wherein:
the hot end plate is made into a plate-shaped structure by alumina ceramics, aluminum nitride ceramics, an aluminum substrate or a copper substrate; the cold end plate is of a plate-shaped structure made of alumina ceramics, aluminum nitride ceramics, an aluminum substrate or a copper substrate.
10. The optical power meter of claim 1, wherein:
the position of a decimal point of the voltmeter can be adjusted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120420804.2U CN214843625U (en) | 2021-02-26 | 2021-02-26 | Optical power meter based on semiconductor thermoelectric generation piece |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120420804.2U CN214843625U (en) | 2021-02-26 | 2021-02-26 | Optical power meter based on semiconductor thermoelectric generation piece |
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| Publication Number | Publication Date |
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| CN214843625U true CN214843625U (en) | 2021-11-23 |
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| CN202120420804.2U Active CN214843625U (en) | 2021-02-26 | 2021-02-26 | Optical power meter based on semiconductor thermoelectric generation piece |
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2021
- 2021-02-26 CN CN202120420804.2U patent/CN214843625U/en active Active
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