CN209387134U - A kind of wide spectrum photodetector - Google Patents
A kind of wide spectrum photodetector Download PDFInfo
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- CN209387134U CN209387134U CN201920378820.2U CN201920378820U CN209387134U CN 209387134 U CN209387134 U CN 209387134U CN 201920378820 U CN201920378820 U CN 201920378820U CN 209387134 U CN209387134 U CN 209387134U
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- wide spectrum
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- photosensitive semiconductor
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- spectrum photodetector
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Abstract
The utility model discloses a kind of wide spectrum photodetectors, including photodetector head, TEC, Amp and signal output apparatus, photodetector head includes the Si photosensitive semiconductor and PbSe photosensitive semiconductor of common optical axis, Amp includes two, two Amp are connected separately Si photosensitive semiconductor and PbSe photosensitive semiconductor, two Amp are connect with control power supply signal, and signal output apparatus is connected separately two Amp；TEC is connected separately control power supply, Si photosensitive semiconductor and PbSe photosensitive semiconductor.Wide spectrum photodetector uses binary channels probing, and the wave-length coverage of the light of detection is wider；Wide spectrum photodetector accurately controls the temperature of hardware by TEC, it is coupled simultaneously using heat sink, can accurately adjust the temperature of entire optoelectronic device, the especially temperature of detecting head, thermal drift and the thermal noise for sufficiently reducing detector, make the working performance of device get a promotion；Wide spectrum photodetector structure is simple, functional good, has good economy and practicability.
Description
Technical field
The utility model relates to field of photodetection, more particularly to a kind of wide spectrum photodetector.
Background technique
Photodetector is the device for converting optical signals into electric signal, and principle is to cause illuminated material electricity by radiation
Conductance changes.Photodetector has extensive use in fields such as scientific research, medical treatment, industry, the energy, public lifes.Wherein, purple
Outside line is for sterilizing, money-checking, engineering are detected a flaw, solidified etc.；Infrared band is mainly used for missile guidance, infrared thermal imaging, infrared distant
Sense etc.；X-ray is taken a picture for CT；Gamma-rays is for treatment etc..Visible light is the basis of all biological observation things.
For black light, research observation is extremely inconvenient, it is therefore desirable to photoelectric acquisition sensor is used, being incident on
Optical power on detector is converted to corresponding photoelectric current, intuitive can must observe, convenient for research.Photoelectric acquisition sensor
The quality of performance is directly related to the precision of receiving processing circuit.Therefore, suitable photodetector is only selected and designs,
The performance of receiving processing circuit will not be weakened.
When design, primary concern is that the noise of photodetector, quantum efficiency, several technical indicators such as responsiveness.?
Many application fields, such as photo-coupler output par, c, generally require photodetector and signal processing being integrated in same
On single-chip, the process compatible for realizing photodetector and signal processing circuit that is to say.
Utility model content
The utility model provides wide spectrum photodetector, is detected using binary channels, it is wider array of can to obtain wave-length coverage
Detection, combines economy and job stability, so that the design of entire photodetector is more reasonable.
A kind of wide spectrum photodetector, including photodetector head, TEC(Thermo Electric Cooler, semiconductor
Refrigerator), Amp(amplifier, amplifier or amplifying circuit) and signal output apparatus, photodetector head include common optical axis
Si photosensitive semiconductor and PbSe photosensitive semiconductor, Amp include two, two Amp be connected separately Si photosensitive semiconductor and
PbSe photosensitive semiconductor, two Amp are connect with control power supply signal, and signal output apparatus is connected separately two Amp；
TEC is connected separately control power supply, Si photosensitive semiconductor and PbSe photosensitive semiconductor.
As a preferred embodiment, wide spectrum photodetector integrative packaging.
As a preferred embodiment, wide spectrum photodetector further includes heat sink(cooling fin;Heat sink, again
Cry heat sink), wide spectrum photodetector is coupled by heat sink.
As a preferred embodiment, signal output apparatus includes two output units, and an output unit is for exporting 0.2
The light wave segment signal of ~ 1.1um, another output unit are used to export the light wave segment signal of 1.1 ~ 5.1um.
As a preferred embodiment, two output units respectively include indicator light follower and numerical value follower.
As a preferred embodiment, wide spectrum photodetector further includes temperature display panel and discharging temperature control device, temperature
Degree display panel is used to incude the temperature of hardware, and discharging temperature control device is connect with TEC signal, for adjusting the temperature of hardware.
As a preferred embodiment, Amp is arranged multi gear position and adjusts.
The beneficial effects of the utility model are:
1, the wide spectrum photodetector of the utility model uses binary channels probing, and the wave-length coverage of the light of detection is wider；
2, the wide spectrum photodetector of the utility model accurately controls the temperature of hardware by TEC, makes simultaneously
It is coupled with heat sink, can accurately adjust the temperature of entire optoelectronic device, the especially temperature of detecting head, sufficiently reduced and visit
Thermal drift and the thermal noise for surveying device, make the working performance of device get a promotion；
3, indicator light follower is arranged in signal output apparatus alternative in the wide spectrum photodetector of the utility model
And/or different assembling modes is provided for different demands in numerical value follower, so as to meet various demands, is examining
While considering economy, the practicability of photodetector is taken into account, the overall volume of photodetector can be also reduced；
4, the wide spectrum photodetector structure of the utility model is simple, functional good, has good economy and reality
The property used.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model embodiment wide spectrum photodetector；
Appended drawing reference:
1-photodetector head, 2-signal output apparatus, 3-control power supplys, 4-heat sink.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describing, it is clear that described embodiment is only a part of the embodiment of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Embodiment 1: a kind of wide spectrum photodetector, including photodetector head 1, TECThermo Electric
Cooler, semiconductor cooler, Ampamplifier, amplifier or amplifying circuit and signal output apparatus 2, photodetector head 1
Si photosensitive semiconductor and PbSe photosensitive semiconductor including common optical axis, Amp include two, and two Amp are connected separately Si light
Sensitive semiconductor and PbSe photosensitive semiconductor, two Amp are connect with control 3 signal of power supply, and signal output apparatus 2 is distinguished signal and connected
Meet two Amp；TEC is connected separately control power supply 3, Si photosensitive semiconductor and PbSe photosensitive semiconductor.
In embodiment 1, the course of work is that optical signal is irradiated on optical axis, and optical axis is a kind of optical sensor component, benefit
With optical principle and optical coupling, the resistance of different equivalences is generated, Si photosensitive semiconductor and PbSe photosensitive semiconductor are according to generation
Different resistance selection conductings, are amplified, and be transmitted to signal output apparatus 2 through Amp by the electric signal of photosensitive semiconductor, are obtained
Under the driving of control power supply 3, the accurate control of operating temperature is realized by TEC as a result, in whole work process for output,
Sufficiently to reduce thermal drift and the thermal noise of detector, entire wide spectrum photodetector uses integrative packaging, passes through heat
Sink4 is coupled, further to control temperature.In terms of lectotype selection, shore pine is can be used in detector body
Other corresponding products are added in K3413-002 type Two-color Infrared Detectors and its similar products in main product, to realize
Above-mentioned workflow.Embodiment 1 can be realized: expanding photodetector to the respective range of optical wavelength, uses double semiconductors
Common optical axis, so that entire circuit relative simplicity, and make whole equipment not too big, reach good practicability and economy,
It is coupled by TEC and heat sink4, can accurately control the temperature of entire optoelectronic device, the especially temperature of detecting head, make
The working performance of device is more stable.
Embodiment 2: it is substantially similar to embodiment 1, the difference is that, signal output apparatus 2 includes that two outputs are single
Member, an output unit are used to export the light wave segment signal of 0.2 ~ 1.1um, another output unit is for exporting 1.1 ~ 5.1um
Light wave segment signal.Two output units respectively include indicator light follower and numerical value follower.
In example 2, there are different assembling modes, to realize different output as a result, in the first assembling mode
In, use indicator light follower as signal output apparatus 2, according to Si photosensitive semiconductor and the selection conducting of PbSe photosensitive semiconductor
Signal, arriving signal output device 2, two indicator lights correspond to bright one, can be rough obtain the band signal of light, for
Simple machine is especially suitable；In second of assembling mode, it is applicable in numerical value follower, the specific data of optical band are obtained, for wanting
Seek higher equipment；In the third assembling mode, while using indicator light and numerical value follower as signal output apparatus 2,
In different situations, selectivity use different signal output apparatus 2, be arranged gear, can at any time according to the demand of user,
Selectivity obtains exporting result accordingly using gear.Embodiment 2 is directed to different demands, and different assembling modes is provided,
So as to meet various demands, while considering economy, the practicability of photodetector is taken into account, can also reduce photoelectricity
The overall volume of detector.
Embodiment 3: with embodiment 1, embodiment 2 the difference is that, wide spectrum photodetector further includes temperature display
Panel and discharging temperature control device, temperature display panel are used to incude the temperature of hardware, and discharging temperature control device is connect with TEC signal,
For adjusting the temperature of hardware.The working principle of TEC is Peltier effect, is referred to when DC current passes through two kinds of semiconductor materials
When the galvanic couple of composition, one end heat absorption, the phenomenon that the heat release of one end.The N-type of heavy doping and the bismuth telluride of p-type are mainly used as TEC's
Semiconductor material, Bismuth Telluride elements are to generate heat parallel using electrically coupled in series.TEC includes some p-types and N-type to group, they are logical
It crosses electrode to connect together, and is clipped between two ceramic electrodes；When there is electric current to flow through from TEC, the heat meeting of electric current generation
The other side is passed to from the side of TEC, " heat " side and " cold " side are generated on TEC, adds discharging temperature control device and temperature display face
Plate to incude the temperature of hardware, and adjusts temperature, and key data is the temperature of sensing detecting head, and for adjusting detection
The temperature of head, sufficiently to reduce thermal drift and the thermal noise of detector, so that the entire electrooptical device moment is in stable work
Make state.
Embodiment 4: the difference is that, Amp is arranged multi gear position and adjusts, and settable amplifier increases with embodiment 1,2,3
Benefit is that 10K, 100K and other multi gear positions are adjustable, realizes corresponding bandwidth gain, and the high speed to realize entire photodetector is high
Gain, while user being facilitated to obtain reasonable output signal amplitude when measuring different illumination intensity signal.
The above description is only the embodiments of the present invention, and therefore it does not limit the scope of the patent of the utility model, all
Equivalent structure or equivalent flow shift made based on the specification and figures of the utility model, is applied directly or indirectly in
Other related technical areas are also included in the patent protection scope of the utility model.
Claims (7)
1. a kind of wide spectrum photodetector, which is characterized in that including photodetector head (1), TEC, Amp and signal output apparatus
(2), photodetector head (1) includes the Si photosensitive semiconductor and PbSe photosensitive semiconductor of common optical axis, and Amp includes two, two Amp
It is connected separately Si photosensitive semiconductor and PbSe photosensitive semiconductor, two Amp are connect with control power supply (3) signal, signal
Output device (2) is connected separately two Amp；TEC is connected separately control power supply (3), Si photosensitive semiconductor and PbSe
Photosensitive semiconductor.
2. wide spectrum photodetector as described in claim 1, which is characterized in that the wide spectrum photodetector integration
Encapsulation.
3. wide spectrum photodetector as claimed in claim 2, which is characterized in that the wide spectrum photodetector further includes
Heat sink(4), wide spectrum photodetector passes through heat sink(4) coupled.
4. wide spectrum photodetector as described in claim 1, which is characterized in that the signal output apparatus (2) includes two
A output unit, an output unit are used to export the light wave segment signal of 0.2 ~ 1.1um, another output unit is for exporting
The light wave segment signal of 1.1 ~ 5.1um.
5. wide spectrum photodetector as claimed in claim 4, which is characterized in that two output units wrap respectively
Include indicator light follower and numerical value follower.
6. wide spectrum photodetector as described in claim 1, which is characterized in that the wide spectrum photodetector further includes
Temperature display panel and discharging temperature control device, temperature display panel are used to incude the temperature of hardware, and discharging temperature control device and TEC believe
Number connection, for adjusting the temperature of hardware.
7. wide spectrum photodetector as described in claim 1, which is characterized in that Amp setting multi gear position is adjusted.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920378820.2U CN209387134U (en) | 2019-03-25 | 2019-03-25 | A kind of wide spectrum photodetector |
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| CN201920378820.2U CN209387134U (en) | 2019-03-25 | 2019-03-25 | A kind of wide spectrum photodetector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111551248A (en) * | 2020-05-20 | 2020-08-18 | 武汉奥博奥科技有限公司 | Passive coupling small-size photoelectric detector |
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2019
- 2019-03-25 CN CN201920378820.2U patent/CN209387134U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111551248A (en) * | 2020-05-20 | 2020-08-18 | 武汉奥博奥科技有限公司 | Passive coupling small-size photoelectric detector |
| CN111551248B (en) * | 2020-05-20 | 2022-08-09 | 武汉奥博奥科技有限公司 | Passive coupling small-size photoelectric detector |
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