CN202421055U - T-Hz wave detector - Google Patents
T-Hz wave detector Download PDFInfo
- Publication number
- CN202421055U CN202421055U CN2012200058757U CN201220005875U CN202421055U CN 202421055 U CN202421055 U CN 202421055U CN 2012200058757 U CN2012200058757 U CN 2012200058757U CN 201220005875 U CN201220005875 U CN 201220005875U CN 202421055 U CN202421055 U CN 202421055U
- Authority
- CN
- China
- Prior art keywords
- thin film
- material thin
- superconductor material
- wave detector
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model discloses a T-Hz wave detector, which is used for detecting T-Hz waves from a T-Hz wave radiation source, and includes a substrate, a superconducting material thin film, a cryostat and a detection circuit, wherein the superconducting material thin film is adhered onto the substrate, and adopts a single-strip long-range line type structure extending on the substrate in a zigzag and compact manner; the cryostat accommodates the substrate and the superconducting material thin film and can be used for providing temperature of a superconducting transformation temperature zone where the superconducting material thin film is positioned; the cryostat is provided with a window, and to-be-detected T-Hz waves can penetrate the window to irradiate on the superconducting material thin film; and the detect circuit is connected with the two ends of the superconducting material thin film adopting the long-range line type structure. The T-Hz wave detector provided by the utility model has high sensitivity and signal-to-noise ratio, low noise equivalent power, simple structure and excellent stability, and is particularly suitable for the detection of the T-Hz wave radiation source with low power and big beam spot.
Description
Technical field
The utility model relates to the THz wave technical field of detection, more specifically, relates to the terahertz wave detector of based superconductive material.
Background technology
Terahertz (THz) radiation is that (photon energy is from 0.41meV to 41.4meV from 0.1THz to 10THz; Wavelength from 30 μ m to 3mm) electromagnetic radiation; It is the transitional region of photonics technology and electronics technology, macroscopic view and microcosmic between infrared and microwave radiation.The THz wave band is one and has very much scientific value but the electromagnetic radiation zone of untapped utilization still; Its research relates to physics, optoelectronics and material science etc., in imaging, medical diagnosis, environmental science, information, national security and basic physics research field wide application prospect and using value is arranged.In the development and utilization of terahertz wave band, be a very important job to the detection of terahertz signal.Compare with the optical region electromagnetic wave of shorter wavelength, the THz wave photon energy is low, and ground unrest occupies space of prominence usually, and therefore improving constantly receiving sensitivity then becomes inevitable requirement.
At present, have and utilize superconductor to carry out the detection of THz wave, for example the detecting strategy of based superconductive material tunnel junction structure, superconductor micro-bridge structure, superconductor dipole antenna configuration.But these scenario-frames are complicated, manufacturing cost is higher.
The utility model content
A purpose of the utility model is to provide a kind of terahertz wave detector of new based superconductive material.Another purpose of the utility model is to provide a kind of sensitivity and signal to noise ratio (S/N ratio) is high, noise equivalent power is low terahertz wave detector.A purpose again of the utility model is to provide a kind of terahertz wave detector of simple in structure, good stability.The another purpose of the utility model is to provide a kind of terahertz wave detector that is particularly suitable for surveying low-power, restraints the big terahertz radiation source of spot.
The utility model is realized through following scheme:
A kind of terahertz wave detector is used to survey the THz wave from terahertz radiation source, and said terahertz wave detector comprises:
Substrate;
Attached to the superconductor material thin film on the said substrate, said superconductor material thin film is the long-range lines type structure that wall scroll extends on said substrate with tortuous and compact mode;
Cryostat, said cryostat hold said substrate and superconductor material thin film and the temperature that makes said superconductor material thin film be in the suiperconducting transition warm area can be provided; Wherein, said cryostat is provided with window, and THz wave to be detected can pass said window and shine directly on the said superconductor material thin film; With
Detection circuit, said detection circuit are connected the two ends of the superconductor material thin film of said long-range lines type structure, dc bias current is provided and surveys the voltage at superconductor material thin film two ends to said superconductor material thin film.
Preferably, the material of said superconductor material thin film is a niobium.
Preferably, the thickness of said superconductor material thin film is between 1～20nm.
Preferably, the line thickness of said superconductor material thin film can be between 1～30 μ m.
In one embodiment, at least a portion in the zone that is provided with superconductor material thin film of said substrate, the lines length of the above superconductor material thin film of unit square millimeter area is greater than 20mm.
In one embodiment, at least a portion in the zone that is provided with superconductor material thin film of said substrate, the superconductor material thin film area occupied is greater than 40% on the unit area.
Preferably, said cryostat is the thermostat that 4～10K temperature is provided.
In one embodiment, the size of said dc bias current is 10～200 μ A.
In one embodiment, said THz wave to be detected is the THz wave after modulating with 13～1333Hz modulating frequency.
The terahertz wave detector of the utility model adopts the direct heat absorber of superconductor as terahertz emission, has that sensitivity and signal to noise ratio (S/N ratio) are high, noise equivalent power is low, simple in structure, cost is low, the advantage of good stability; Be particularly suitable for surveying low-power, the big terahertz radiation source of bundle spot.
Description of drawings
Fig. 1 is the structural representation according to the terahertz wave detector of an embodiment of the utility model.
Fig. 2 is the superconductor material thin film long-range lines type structural representation according to the terahertz wave detector of an embodiment of the utility model.
Fig. 3 is the partial enlarged drawing of the superconductor material thin film long-range lines type structure among Fig. 2.
Fig. 4 is the resistance temperature curve according to the niobium pentoxide film long-range lines type structure of an embodiment of the utility model.
Embodiment
Specify the utility model below in conjunction with accompanying drawing.
The terahertz wave detector of the utility model is used to survey the THz wave from terahertz radiation source.Fig. 1 shows the structural representation of an embodiment of the terahertz wave detector of the utility model.In Fig. 1, this terahertz wave detector comprises substrate 4 and attached to the superconductor material thin film on the substrate 43.Substrate 4 can be arranged in the cryostat 2 with superconductor material thin film 3, and wherein, cryostat 2 is used to provide enough low temperature, thereby can make superconductor material thin film 3 be in its suiperconducting transition warm area.In Fig. 1, cryostat 2 is provided with window 1, can see through window 1 from the terahertz radiation to be detected of terahertz radiation source (not shown) and shine directly on the superconductor material thin film 3.In other embodiments, also can take other device or measure to come low temperature to be provided to superconductor material thin film 3.
The terahertz wave detector of the utility model can also comprise detection circuit.In the embodiment in figure 1, this detection circuit can comprise DC current source 5 and lock-in amplifier 6, and wherein, DC current source 5 is used for to superconductor material thin film 3 dc bias current I being provided
b, lock-in amplifier 6 is used to survey the output voltage signal of superconductor material thin film 3.
Terahertz wave detector shown in Figure 1 makes superconductor material thin film 3 be in its suiperconducting transition warm area with cryostat 2 when work, and at this moment, the resistance of superconductor material thin film 3 is responsive unusually to variation of temperature.Then, DC current source 5 is to the constant dc bias current I of superconductor material thin film 3 logical
b, this electric current I
bShould less than or be slightly less than the superconduction critical electric current of superconductor material thin film 3.Like this, when the terahertz emission from terahertz radiation source shines directly into 3 last times of superconductor material thin film, because the thermal effect of terahertz emission, and superconductor material thin film 3 is as direct thermal absorption body, and faint variation will take place its temperature.The faint variation of the temperature of superconductor material thin film 3 will cause its resistance generation marked change.Be connected with dc bias current I
bSituation under, the marked change of superconductor material thin film 3 resistance will show as the output voltage generation marked change at its two ends, and detect this change in voltage by detection circuit (for example wherein lock-in amplifier 6), thereby reach the purpose of surveying THz wave.
Fig. 2 shows the concrete structure of an embodiment of superconductor material thin film 3, the long-range lines type structure that this superconductor material thin film 3 extends with tortuous and compact mode for wall scroll.Two ends at this lines type superconductor material thin film 3 are provided with link electrode 7 and 8, are respectively applied for DC current source 5 to be connected with lock-in amplifier 6.
Generally speaking, the tortuous and compact long-range lines type structure of superconductor material thin film 3 can realize accumulation and amplification to detectable signal effectively, thereby effectively improves detection sensitivity and detection efficiency.The long-range lines type structure of superconductor material thin film 3 can be equivalent to a series circuit, and the voltage signal of output is proportional to the relative variation of resistance on the added electric current and detector on the detector; Under the certain situation of electric current, the relative variation of resistance is big more, and the voltage signal of output is big more.The relative variation of resistance is big, means that then the length of lines is longer.So for the lines length of superconductor material thin film 3, the longer the better in certain zone, can realize the accumulation to detectable signal effectively.
The dense degree that can characterize its lines with the lines length and/or the area occupied of superconductor material thin film 3 on the substrate unit area.In one embodiment, at least a portion in the zone that is provided with superconductor material thin film of substrate 4, the lines length of superconductor material thin film 3 is greater than 20mm on the unit square millimeter area.In one embodiment, at least a portion in the zone that is provided with superconductor material thin film of substrate 4, superconductor material thin film 3 area occupied are greater than 40% on the unit area.
The shape of the hot spot that superconductor material thin film 3 can form on test surface according to THz wave to be detected is selected matched tortuous extension mode, in other words, can customize according to the shape of hot spot.In this specific embodiment of superconductor material thin film shown in Figure 23, its lines are rendered as periodic curved structure.Fig. 3 is the enlarged drawing of part shown in the empty frame among Fig. 2, and wherein, a is a line thickness, and b is a gap width, and c is tortuous Cycle Length.In one embodiment, the span of line thickness a can be between 1～30 μ m, and the span of gap width b can be between 1～30 μ m.
The thickness of superconductor material thin film 3 also has certain influence for the performance of terahertz wave detector.The temperature of macroscopic view raises and resistance value changes thereupon because detector sensitivity shows as, and obviously superconductor material thin film thickness is suitable: film is too thin, and the suiperconducting transition district can broadening, even film can not superconduction, is unfavorable for improving detector sensitivity; Film is too thick, and terahertz emission heat is not enough to influence whole thickness, causes signal too little, even does not have signal.In one embodiment, the thickness of superconductor material thin film 3 is preferably between 1～20nm.
In one embodiment, superconductor material thin film 3 is to be formed by the superconductor niobium.Can adopt high vacuum coating technology on substrate 4, to be coated with one deck niobium film, through little processing means of photolithography the niobium film is processed into required long-range lines type structure again.Choosing of substrate 4 do not have particular requirement, conventional backing material such as silicon, and sapphire or magnesium oxide etc. all can.Niobium belongs to low temperature superconducting material, and than other high temperature superconducting materia, its temperature resistance curve is more precipitous in the suiperconducting transition warm area, so thermal radiation and the resistance variations that causes is also sensitiveer.And the niobium pentoxide film self property is stable to be difficult for oxidation, and the hardness height is not fragile.
Selecting silicon is substrate 4 more specifically among the embodiment at one, and niobium pentoxide film is superconductor material thin film 3 and the employing cycle curved structure identical with Fig. 2.The overall dimensions of niobium pentoxide film is 8mm*8mm, and line thickness a is 15 μ m, and gap width b is 15 μ m, and Cycle Length c is 60 μ m, and lines thickness is 10nm.The about 2140mm of lines total length of niobium pentoxide film, the lines length of niobium pentoxide film is 33.4mm on the unit square millimeter area of silicon substrate; The area of niobium pentoxide film is 1/2nd of a Substrate Area.The niobium pentoxide film resistance temperature curve that forms like this is as shown in Figure 4, shows when temperature is lower than 6.42K that this niobium pentoxide film is in superconducting state.And can find out that from figure the transformation warm area of this niobium pentoxide film is narrow, help obtaining highly sensitive terahertz wave detector.In the present embodiment, the used cryostat 2 PT407 type pulse tube refrigerating machine that is Cryomech company; Used terahertz radiation source is the continuous tera-hertz spectra PB7100 system that U.S. emcore company produces; Be used to modulate the lock-in amplifier (not shown) of THz wave and survey the Li5640 type lock-in amplifier that the used lock-in amplifier of niobium pentoxide film output voltage 6 is produced for Japanese NF company; Used DC current source 5 is a Keithley2400 current source table.In the present embodiment, the temperature that provides of cryostat is 4～10K; It is the dc bias current of 10～200 μ A that DC current source provides size.THz wave to be detected incides in the terahertz wave detector after the modulation of lock-in amplifier (not shown), and its modulating frequency is 13～1333Hz.Through measuring, the preferred condition of work of the niobium pentoxide film terahertz wave detector that forms like this is: temperature constant state T=6.405K, dc bias current I
b=100 μ A, modulating frequency is 83Hz.This preferred condition of work and near under the condition, the responsiveness of this niobium pentoxide film terahertz wave detector can reach 56V/W, signal to noise ratio (S/N ratio) can reach 48dB, noise equivalent power can reach 8.3*10
-15W/Hz
1/2, embodied excellent performance.
The embodiment that it will be appreciated by those skilled in the art that the utility model only is used to explain the utility model but not is used for it is made any restriction.All changes of in the spirit of the utility model, making are all within the protection domain of the utility model.
Claims (9)
1. a terahertz wave detector is used to survey the THz wave from terahertz radiation source, and said terahertz wave detector comprises:
Substrate;
Attached to the superconductor material thin film on the said substrate, said superconductor material thin film is the long-range lines type structure that wall scroll extends on said substrate with tortuous and compact mode;
Cryostat, said cryostat hold said substrate and superconductor material thin film and the temperature that makes said superconductor material thin film be in the suiperconducting transition warm area can be provided; Wherein, said cryostat is provided with window, and THz wave to be detected can pass said window and shine directly on the said superconductor material thin film; With
Detection circuit, said detection circuit are connected the two ends of the superconductor material thin film of said long-range lines type structure, dc bias current is provided and surveys the voltage at superconductor material thin film two ends to said superconductor material thin film.
2. terahertz wave detector according to claim 1 is characterized in that, the material of said superconductor material thin film is a niobium.
3. terahertz wave detector according to claim 1 and 2 is characterized in that the thickness of said superconductor material thin film is between 1～20nm.
4. terahertz wave detector according to claim 1 and 2 is characterized in that, the line thickness of said superconductor material thin film is between 1～30 μ m.
5. terahertz wave detector according to claim 1 and 2 is characterized in that, at least a portion in the zone that is provided with superconductor material thin film of said substrate, the lines length of the above superconductor material thin film of unit square millimeter area is greater than 20mm.
6. terahertz wave detector according to claim 1 and 2 is characterized in that, at least a portion in the zone that is provided with superconductor material thin film of said substrate, the superconductor material thin film area occupied is greater than 40% on the unit area.
7. terahertz wave detector according to claim 2 is characterized in that, said cryostat is the thermostat that 4～10K temperature is provided.
8. terahertz wave detector according to claim 2 is characterized in that, the size of said dc bias current is 10～200 μ A.
9. terahertz wave detector according to claim 1 and 2 is characterized in that, said THz wave to be detected is the THz wave after modulating with 13～1333Hz modulating frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200058757U CN202421055U (en) | 2012-01-06 | 2012-01-06 | T-Hz wave detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200058757U CN202421055U (en) | 2012-01-06 | 2012-01-06 | T-Hz wave detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202421055U true CN202421055U (en) | 2012-09-05 |
Family
ID=46745809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200058757U Expired - Fee Related CN202421055U (en) | 2012-01-06 | 2012-01-06 | T-Hz wave detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202421055U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109031448A (en) * | 2018-10-29 | 2018-12-18 | 苏州耶拿微电子有限公司 | Using the passive superconduction Terahertz human body safety check instrument of WR4 waveguide |
| CN112263234A (en) * | 2020-11-18 | 2021-01-26 | 上海理工大学 | Human body acupuncture point detection device for detecting terahertz radiation signals and using method |
-
2012
- 2012-01-06 CN CN2012200058757U patent/CN202421055U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109031448A (en) * | 2018-10-29 | 2018-12-18 | 苏州耶拿微电子有限公司 | Using the passive superconduction Terahertz human body safety check instrument of WR4 waveguide |
| CN112263234A (en) * | 2020-11-18 | 2021-01-26 | 上海理工大学 | Human body acupuncture point detection device for detecting terahertz radiation signals and using method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Trupke et al. | Self-consistent calibration of photoluminescence and photoconductance lifetime measurements | |
| CN112859098B (en) | Photon number resolution measurement enhanced single-photon laser radar system and ranging method | |
| US8465201B2 (en) | Electro-magnetic radiation detector | |
| CN103090977B (en) | Terahertz signal detection device | |
| CN102539339B (en) | Terahertz wave detector | |
| JPH03274772A (en) | Radiation detecting element and radiation detector | |
| JPH07209431A (en) | X-ray detecting element and method of operation of device thereof | |
| CN202421055U (en) | T-Hz wave detector | |
| CN102136520B (en) | Terahertz single-photon detector and detection method thereof | |
| CN103364091A (en) | Multifunctional superconducting single photon detector | |
| CN104458848A (en) | Comb nanosensor with pH indication and self-calibration and preparation method of comb nanosensor | |
| CN106847987B (en) | CIGS superelevation, ultrafast wide wavestrip optical position sensitive detector | |
| US5331162A (en) | Sensitive, low-noise superconducting infrared photodetector | |
| CN110864805B (en) | Ultra-wideband spectrum detection device and method | |
| CN110767769A (en) | Detection unit, ultra-wideband photodetector and detection method | |
| Ferraioli et al. | Evidence for generalized Kirchhoff’s law from angle-resolved electroluminescence of high efficiency silicon solar cells | |
| Kasemann et al. | Emissivity-corrected power loss calibration for lock-in thermography measurements on silicon solar cells | |
| Li et al. | Design and analysis of weak optical signal detection system based on photoelectric detection technology | |
| Lu et al. | An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates | |
| CN109728121B (en) | Wide-temperature large-dynamic-range mid-infrared photoelectric detector and detection module | |
| Shenoy et al. | Devices used for measuring solar radiation—a review | |
| Wang et al. | Photon-detections via probing the switching current shifts of Josephson junctions | |
| CN206248222U (en) | Pyroelectricity sensing circuit with zero temperature compensation | |
| CN111048605A (en) | Infrared imaging unit for enhancing photoelectric effect by utilizing hot carriers | |
| Zhang et al. | PtTe2-based terahertz photodetector integrated with an interdigital antenna |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120905 Termination date: 20160106 |