CN111048605A - Infrared imaging unit for enhancing photoelectric effect by utilizing hot carriers - Google Patents
Infrared imaging unit for enhancing photoelectric effect by utilizing hot carriers Download PDFInfo
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- 238000003331 infrared imaging Methods 0.000 title claims abstract description 20
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 10
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- 239000002086 nanomaterial Substances 0.000 claims abstract description 113
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- 229910005540 GaP Inorganic materials 0.000 claims abstract description 10
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
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- H01L31/02—Details
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Abstract
The invention relates to an infrared imaging unit for enhancing photoelectric effect by utilizing hot carriers, which comprises a substrate layer, a first indium phosphide layer, a first indium gallium arsenide layer, a second indium phosphide layer, a second indium gallium arsenide layer and a second electrode layer, wherein the first indium phosphide layer, the first indium gallium arsenide layer, the second indium phosphide layer, the second indium gallium arsenide layer and the second electrode layer are arranged from bottom to top; the silicon nanostructure layer is arranged in parallel with the first indium gallium arsenide layer, the second indium gallium phosphide layer and the second indium gallium arsenide layer, and the plurality of plasmon nanostructure layers are arranged above the silicon nanostructure layer and above the second electrode layer; according to the infrared imaging unit for enhancing the photoelectric effect by utilizing the hot carriers, the photo-thermal effect is generated on the silicon nanostructure by utilizing the plasmon nanometer structure layer, so that the utilization efficiency of the photo-generated carriers is improved, and the photo-thermal effect is generated in the silicon nanostructure due to the temperature gradient drive of the photo-generated hot carriers. The photothermal and photoelectric effects can effectively utilize the energy of thermalized carriers which cannot be utilized by the traditional photoelectric detection, and the photoelectric conversion efficiency is further improved.
Description
Technical Field
The invention relates to the technical field of infrared imaging, in particular to an infrared imaging unit for enhancing a photoelectric effect by utilizing hot carriers.
Background
The infrared imaging technology is a high and new technology with a wide prospect. Electromagnetic waves longer than 0.78 microns are outside the red color of the visible spectrum and are called infrared, also known as infrared radiation. The electromagnetic wave with the wavelength of 0.78-1000 microns is referred to, wherein the part with the wavelength of 0.78-2.0 microns is referred to as near infrared, and the part with the wavelength of 2.0-1000 microns is referred to as thermal infrared. In nature, all objects can radiate infrared rays, so that infrared images formed by different thermal infrared rays can be obtained by measuring the infrared ray difference between a target and a background by using a detector.
When infrared rays are transmitted on the ground, the infrared rays are absorbed by Atmospheric composition substances (particularly H2O, CO2, CH4, N2O, O3 and the like), the intensity is obviously reduced, and the infrared rays only have better transmittance (Transmission) in two wave bands of 3-5 microns of medium waves and 8-12 microns of long waves, which are known as Atmospheric windows (Atmospheric windows), and most of infrared thermal imagers detect the two wave bands and calculate and display the surface temperature distribution of an object. In addition, infrared thermography is primarily used to measure the infrared radiation energy of the object surface because infrared rays have very poor penetration ability to most of solid and liquid materials.
The detector is made by utilizing the photoconductive effect of semiconductor materials. By photoconductive effect is meant a physical phenomenon in which radiation causes a change in the conductivity of the irradiated material. Generally, a semiconductor material can excite a bag of hole pairs in the semiconductor by utilizing incident light, and an electric current is formed when electrons and holes are respectively diffused to a cathode and an anode, namely, an output signal is generated, so that light energy is converted into electric energy, and a device of the electric signal is mainly limited by a material energy band and is also limited by material carrier mobility.
Disclosure of Invention
The invention aims to provide an infrared imaging unit for enhancing photoelectric effect by utilizing hot carriers, which comprises a substrate layer, wherein a first indium phosphide layer is arranged above the substrate layer, an electrode and a first indium gallium arsenide layer are arranged above the first indium phosphide layer, and the first indium gallium arsenide layer and the electrode are mutually spaced;
a first silicon nanostructure layer is arranged at the left end above the first indium gallium arsenide layer, a second indium phosphide layer is further arranged above the first indium gallium arsenide layer, the second indium phosphide layer is positioned on the right side of the first silicon nanostructure layer, the second indium phosphide layer and the first silicon nanostructure layer are mutually spaced, and a first plasmon nanostructure layer is arranged above the right end of the first silicon nanostructure layer;
a second silicon nanostructure layer is arranged at the left end above the second indium phosphide layer, a second indium gallium arsenide layer is further arranged above the second indium phosphide layer, the second indium gallium arsenide layer is positioned on the right side of the second silicon nanostructure layer, the second indium gallium arsenide layer and the second silicon nanostructure layer are mutually spaced, and a second plasmon polariton nanostructure layer is arranged above the right end of the second silicon nanostructure layer;
a third silicon nanostructure layer is arranged at the left end above the second indium gallium arsenide layer, a second electrode layer is further arranged above the second indium gallium arsenide layer, the second electrode layer is located on the right side of the third silicon nanostructure layer, the second electrode layer and the third silicon nanostructure layer are spaced from each other, and a third plasmon polariton nanostructure layer is arranged above the right end of the third silicon nanostructure layer;
and a fourth plasmon nanometer structure layer is arranged above the second electrode layer.
The left ends of the first indium gallium arsenide layer, the second indium gallium phosphide layer, the second indium gallium arsenide layer and the second electrode layer are sequentially arranged in a step shape; the right ends of the first indium gallium arsenide layer, the second indium gallium phosphide layer, the second indium gallium arsenide layer and the second electrode layer sequentially form an inclined plane.
And passivation layers are arranged on the left side surface and the right side surface of the first indium gallium arsenide layer, the second indium gallium phosphide layer, the second indium gallium arsenide layer, the second electrode layer, the first silicon nanostructure layer, the second silicon nanostructure layer, the third silicon nanostructure layer and the fourth silicon nanostructure layer.
And a plurality of holes which are arranged periodically are arranged above the first plasmon nanostructure layer, the second plasmon nanostructure layer, the third plasmon nanostructure layer and the fourth plasmon nanostructure layer.
The first plasmon nanostructure layer, the second plasmon nanostructure layer, the third plasmon nanostructure layer and the fourth plasmon nanostructure layer.
The first electrode is made of gold or silver or copper.
The second electrode layer is made of one of gold, titanium and nickel.
And a silicon dioxide layer is also arranged above the second electrode layer, and the micro-nano metal structure layer is arranged in the middle of the silicon dioxide layer.
The invention has the beneficial effects that: according to the infrared imaging unit for enhancing the photoelectric effect by utilizing the hot carrier, provided by the invention, the photoelectric effect is generated on the silicon nanostructure by utilizing the plasmon nanometer structure layer, so that the utilization efficiency of the photon-generated carrier is improved, and the photoelectric response, namely the photoelectric effect, exists in the silicon nanostructure and is driven by the temperature gradient of the photon-generated hot carrier. The photothermal and photoelectric effects can effectively utilize the energy of thermalized carriers which cannot be utilized by the traditional photoelectric detection, and the photoelectric conversion efficiency is further improved.
The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of an infrared imaging unit for enhancing photoelectric effect by using hot carriers.
In the figure: 1. a base layer; 2. a first indium phosphide layer; 3. a first InGaAs layer; 4. a second indium phosphide layer; 5. a second InGaAs layer; 6. a second electrode layer; 7. a fourth plasmonic nanostructure layer; 8. a passivation layer; 9. a first electrode; 10. a silicon dioxide layer; 11. a first silicon nanostructure layer; 12. a second silicon nanostructure layer; 13. a third silicon nanostructure layer; 14. a first plasmonic nanostructure layer; 15. a second plasmonic nanostructure layer; 16. a third plasmonic nanostructure layer; 17. and (4) holes.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.
Example 1
The embodiment provides an infrared imaging unit for enhancing photoelectric effect by utilizing hot carriers as shown in fig. 1, which includes a substrate layer 1, wherein the substrate layer 1 mainly plays a role in protection and insulation, the substrate layer 1 may be made of a voltage-resistant and insulating material such as silicon dioxide, a first indium phosphide layer 2 is arranged above the substrate layer 1, an electrode 9 and a first indium gallium arsenide layer (3) are arranged above the first indium phosphide layer 2, and the first indium gallium arsenide layer 3 and the electrode 9 are spaced from each other;
a first silicon nanostructure layer 11 is arranged at the left end above the first indium gallium arsenide layer 3, a second indium phosphide layer 4 is further arranged above the first indium gallium arsenide layer 3, the second indium phosphide layer 4 is positioned on the right side of the first silicon nanostructure layer 11, the second indium phosphide layer 4 and the first silicon nanostructure layer 11 are mutually spaced, and a first plasmon polariton nanostructure layer 14 is arranged above the right end of the first silicon nanostructure layer 11;
a second silicon nanostructure layer 12 is arranged at the left end above the second indium phosphide layer 4, a second indium gallium arsenide layer 5 is further arranged above the second indium phosphide layer 4, the second indium gallium arsenide layer 5 is positioned on the right side of the second silicon nanostructure layer 12, the second indium gallium arsenide layer 5 and the second silicon nanostructure layer 12 are mutually spaced, and a second plasmon polariton nanostructure layer 15 is arranged above the right end of the second silicon nanostructure layer 12;
a third silicon nanostructure layer 13 is arranged at the left end above the second indium gallium arsenide layer 5, a second electrode layer 6 is further arranged above the second indium gallium arsenide layer 5, the second electrode layer 6 serves as a grid, the second electrode layer 6 is located on the right side of the third silicon nanostructure layer 13, the second electrode layer 6 and the third silicon nanostructure layer 13 are spaced from each other, and a third plasmon nanostructure layer 16 is arranged above the right end of the third silicon nanostructure layer 13;
a fourth plasmon nano-structure layer 7 is arranged above the second electrode layer 6; the left ends of the first indium gallium arsenide layer 3, the second indium gallium phosphide layer 4, the second indium gallium arsenide layer 5 and the second electrode layer 6 are sequentially arranged in a step shape; the right ends of the first indium gallium arsenide layer 3, the second indium gallium phosphide layer 4, the second indium gallium arsenide layer 5 and the second electrode layer 6 sequentially form an inclined plane; in this way, the first indium phosphide layer 2, the first indium gallium arsenide layer 3, the second indium phosphide layer 4 and the second indium gallium arsenide layer 5 form a semiconductor photoelectric conversion structure, and a photo-thermal-electric conversion structure formed by a silicon nanostructure layer and a grade pear garden nanostructure layer is arranged above the left ends of the first indium gallium arsenide layer 3, the second indium phosphide layer 4 and the second indium gallium arsenide layer 5, and the photo-thermal-electric conversion structure can improve the temperature of semiconductor photoelectric conversion, so that the utilization efficiency of photo-generated carriers is improved, more infrared light can be absorbed by the semiconductor photoelectric conversion structure, and a more stable current signal is generated and is output by the first electrode 9 and the silicon dioxide layer 10, so as to perform subsequent imaging processing; in addition, the multi-layer ladder-shaped structure can make each layer of semiconductor be assisted by certain hot carriers to improve the utilization efficiency of the carriers of the layer.
Passivation layers 8 are arranged on the left side surface and the right side surface of the first indium gallium arsenide layer 3, the second indium gallium phosphide layer 4, the second indium gallium arsenide layer 5, the second electrode layer 6, the first silicon nanostructure layer 11, the second silicon nanostructure layer 12, the third silicon nanostructure layer 13 and the fourth silicon nanostructure layer 7; the passivation layer 8 mainly plays a role in protection, and prevents external infrared light from directly entering an internal semiconductor structure layer to affect photoelectric conversion and further affect a generated electric signal, and the passivation layer 8 can be made of silicon nitride.
The passivation layer 8 is also arranged on the part, which is not occupied by the first electrode 9 and the first indium gallium arsenide layer 3, above the first indium phosphide layer 2, so that the protection effect can be achieved.
A silicon dioxide layer 10 is further arranged above the second electrode layer 6, the micro-nano metal structure layer 7 is arranged in the middle of the silicon dioxide layer 10, and therefore the silicon dioxide layer 10 is arranged above the second electrode layer 6 except for the middle area where the micro-nano metal structure layer 7 is located, the silicon dioxide layer 10 has good light transmission, stability and insulation characteristics, and has a good protection effect on the second electrode layer 6; therefore, the trapezoid structure formed by the first indium gallium arsenide layer 3, the second indium phosphide layer 4, the second indium gallium arsenide layer 5 and the second electrode layer 6 is wrapped by the passivation layer 8 and the silicon dioxide layer 10, and a good protection effect is achieved.
A plurality of periodically arranged holes 17 are formed above the first plasmon nanostructure layer 14, the second plasmon nanostructure layer 15, the third plasmon nanostructure layer 16 and the fourth plasmon nanostructure layer 7; the arrangement period of the holes 17 and the diameter of the holes 17 can be set to be 0.78-1000 μm, and can be specifically set according to the infrared light to be detected, and the priority is consistent with the wavelength of the infrared light to be detected, so that the resonance effect can be generated, and the absorption efficiency of the infrared light can be further improved.
Optionally, the holes 17 may be grooves, so that gratings in different directions absorb different gratings in different directions, and thus converted electrical signals are different, and different incident lights can be detected according to different electrical signals.
The first plasmon nanostructure layer 14, the second plasmon nanostructure layer 15, the third plasmon nanostructure layer 16, and the fourth plasmon nanostructure layer 7 are all made of gold or silver.
The first electrode 9 is made of gold or silver or copper.
The second electrode layer 6 is made of one of gold, titanium and nickel.
Finally, it should be noted that the doping property of the silicon nanostructure should be opposite to the doping property of the semiconductor under the silicon nanostructure, that is, the semiconductor material under the silicon nanostructure layer is an n-type doped material, and the silicon nanostructure should be P-type doped at this time; the semiconductor material below the silicon nanostructure layer is a P-type doped material, and the silicon nanostructure should be n-type doped at this time.
In addition, when the silicon nanostructure is p-type doped, an insulating layer should be disposed between the plasmonic nanostructure and the silicon nanostructure, that is, an insulating layer is disposed between the first plasmonic nanostructure layer 14 and the second indium phosphide layer 4, between the second silicon nanostructure layer 12 and the second plasmonic nanostructure layer 15, and between the third silicon nanostructure layer 13 and the third plasmonic nanostructure layer 16; the insulating layer can be made of silicon dioxide with good light transmittance.
In summary, the infrared imaging unit using the hot carrier to enhance the photoelectric effect utilizes the plasmon nanostructure layer to generate the photothermal effect on the silicon nanostructure, so as to improve the utilization efficiency of the photo-generated carrier, which is the photoelectric response driven by the temperature gradient of the photo-generated hot carrier existing in the silicon nanostructure, i.e., the photothermal effect. The photothermal and photoelectric effects can effectively utilize the energy of thermalized carriers which cannot be utilized by the traditional photoelectric detection, and the photoelectric conversion efficiency is further improved.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (8)
1. The utility model provides an utilize infrared imaging unit of hot carrier reinforcing photoelectric effect which characterized in that: the indium phosphide substrate comprises a substrate layer (1), wherein a first indium phosphide layer (2) is arranged above the substrate layer (1), an electrode (9) and a first indium gallium arsenide layer (3) are arranged above the first indium phosphide layer (2), and the first indium gallium arsenide layer (3) and the electrode (9) are mutually spaced;
a first silicon nanostructure layer (11) is arranged at the left end above the first indium gallium arsenide layer (3), a second indium phosphide layer (4) is further arranged above the first indium gallium arsenide layer (3), the second indium phosphide layer (4) is located on the right side of the first silicon nanostructure layer (11), the second indium phosphide layer (4) and the first silicon nanostructure layer (11) are mutually spaced, and a first plasmon nanostructure layer (14) is arranged above the right end of the first silicon nanostructure layer (11);
a second silicon nanostructure layer (12) is arranged at the left end above the second indium phosphide layer (4), a second indium gallium arsenide layer (5) is further arranged above the second indium phosphide layer (4), the second indium gallium arsenide layer (5) is located on the right side of the second silicon nanostructure layer (12), the second indium gallium arsenide layer (5) and the second silicon nanostructure layer (12) are mutually spaced, and a second plasmon nanostructure layer (15) is arranged above the right end of the second silicon nanostructure layer (12);
a third silicon nanostructure layer (13) is arranged at the left end above the second indium gallium arsenide layer (5), a second electrode layer (6) is further arranged above the second indium gallium arsenide layer (5), the second electrode layer (6) is located on the right side of the third silicon nanostructure layer (13), the second electrode layer (6) and the third silicon nanostructure layer (13) are spaced from each other, and a third plasmon nanostructure layer (16) is arranged above the right end of the third silicon nanostructure layer (13);
and a fourth plasmon nano-structure layer (7) is arranged above the second electrode layer (6).
2. An infrared imaging unit using hot carrier enhanced photoelectric effect as claimed in claim 1, wherein: the left ends of the first indium gallium arsenide layer (3), the second indium gallium phosphide layer (4), the second indium gallium arsenide layer (5) and the second electrode layer (6) are sequentially arranged in a step shape; the right ends of the first indium gallium arsenide layer (3), the second indium gallium phosphide layer (4), the second indium gallium arsenide layer (5) and the second electrode layer (6) sequentially form an inclined plane.
3. An infrared imaging unit using hot carrier enhanced photoelectric effect as claimed in claim 1, wherein: the passivation layer (8) is arranged on each of the left side surface and the right side surface of the first indium gallium arsenide layer (3), the second indium gallium phosphide layer (4), the second indium gallium arsenide layer (5), the second electrode layer (6), the first silicon nanostructure layer (11), the second silicon nanostructure layer (12), the third silicon nanostructure layer (13) and the fourth silicon nanostructure layer (7).
4. An infrared imaging unit using hot carrier enhanced photoelectric effect as claimed in claim 1, wherein: a plurality of holes (17) which are arranged periodically are arranged above the first plasmon nanometer structure layer (14), the second plasmon nanometer structure layer (15), the third plasmon nanometer structure layer (16) and the fourth plasmon nanometer structure layer (7).
5. An infrared imaging unit using hot carrier enhanced photoelectric effect as claimed in claim 1, wherein: the first plasmon nanostructure layer (14), the second plasmon nanostructure layer (15), the third plasmon nanostructure layer (16) and the fourth plasmon nanostructure layer (7) are all made of gold or silver.
6. An infrared imaging unit using hot carrier enhanced photoelectric effect as claimed in claim 1, wherein: the first electrode (9) is made of gold or silver or copper.
7. An infrared imaging unit using hot carrier enhanced photoelectric effect as claimed in claim 1, wherein: the second electrode layer (6) is made of one of gold, titanium and nickel.
8. The unit of claim 1, wherein the unit is a metal micro-nano structure for enhancing photoconductive infrared imaging, and is characterized in that: and a silicon dioxide layer (10) is further arranged above the second electrode layer (6), and the micro-nano metal structure layer (7) is arranged in the middle of the silicon dioxide layer (10).
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| US11588068B2 (en) * | 2020-11-20 | 2023-02-21 | Raytheon Company | Infrared photodetector architectures for high temperature operations |
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| US11588068B2 (en) * | 2020-11-20 | 2023-02-21 | Raytheon Company | Infrared photodetector architectures for high temperature operations |
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