US20090190619A1 - Semiconductor laser package - Google Patents
Semiconductor laser package Download PDFInfo
- Publication number
- US20090190619A1 US20090190619A1 US12/363,103 US36310309A US2009190619A1 US 20090190619 A1 US20090190619 A1 US 20090190619A1 US 36310309 A US36310309 A US 36310309A US 2009190619 A1 US2009190619 A1 US 2009190619A1
- Authority
- US
- United States
- Prior art keywords
- semiconductor laser
- lasers
- laser
- insulated layer
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
Definitions
- the invention is related to semiconductor lasers, in particular to a semiconductor laser package.
- the output power of a single semiconductor laser device is less than 10 W.
- the emitters of all lasers must be strictly positioned in the same plane, that is all light emitters cannot be distorted and must be aligned in a straight line. It is proved that the precise alignment of laser chips is extremely difficult during high power laser packing.
- manufacturers just simply cut a wafer into a one dimensional laser array during process, which is normally called a laser bar.
- a laser bar includes many semiconductor lasers and all lasers are naturally on the same plane.
- these lasers Under working condition, these lasers have to be electrically connected in parallel mode because they are in the same bar and are not totally electrically isolated each other. It is obvious that high current is necessary for driving lasers in a bar because of parallel working mode. For example, for a laser bar with 19 lasers, if 1.5V, 2 A current is required to drive a single laser, 1.5V, 38 A current will be necessary to drive the whole laser bar. Higher current needs thicker wire which means bulky size of power supply, resulting in higher cost of manufacture, increased weight and inconvenience to many applications where the size of laser power supplies is critically requested.
- the present invention provides a semiconductor laser package including a heat sink, a laser bar with a plurality of lasers on the heat sink, an insulated layer arranged between said heat sink and said laser bar, a solder layer combining said insulated layer with said laser bar, and a clearance crossing said solder layer defined between adjacent lasers.
- the width of said clearance is less than the width of the adjacent laser.
- said clearance crosses into said insulated layer.
- said clearance crosses through said insulated layer.
- the area of said insulated layer is larger than that of said laser bar.
- said insulated layer is welded on one surface of said heat sink through said solder layer.
- said insulated layer is deposited on one surface of said heat sink by chemical or physical method, and then coat a solder layer on said insulated layer.
- At least two lasers are connected in series through at least one metal wire.
- separate power supply is provided for said laser.
- a metallic electrode is mounted at the joint with the metal wire and said laser.
- a metallic electrode is mounted at the joint with the metal wire and said insulated layer.
- the semiconductor laser package structure in accordance with the present invention defines a clearance between lasers on the laser bar, and power is supplied to lasers connected in series to decrease the current supplied and significantly reduce the power supply size, thus the manufacturing cost is effectively reduced. Meanwhile, the laser beam quality of the laser bar will not be affected, thus bringing great convenience to the application of high power semiconductor lasers.
- FIG. 1 is a front schematic diagram of a semiconductor laser package in accordance with the present invention, which includes a heat sink, a laser bar, an insulated layer, a solder layer, and a clearance;
- FIG. 2 is a front schematic diagram of a semiconductor laser package with a clearance crossing into an insulated layer in accordance with another embodiment of the present invention
- FIG. 3 is a front schematic diagram of a semiconductor laser package with a clearance crossing through an insulated layer in accordance with another embodiment of the present invention
- FIG. 4 is an overview schematic diagram of a semiconductor laser package with lasers connected in series in accordance with the present invention.
- FIG. 5 is an overview schematic diagram of a semiconductor laser package with lasers respectively connecting with power supplies in accordance with the present invention.
- a semiconductor laser package in accordance with the present invention comprises a heat sink 1 and a laser bar 3 on the heat sink 1 .
- the laser bar 3 comprises a plurality of lasers 31 positioned in the same plane.
- An insulated layer 2 is arranged between said heat sink 1 and said laser bar 2 .
- a solder layer 4 is arranged on said insulated layer 2 . Said laser bar 3 and said insulated layer 2 are combined together through said solder layer 4 .
- a clearance 5 is defined between adjacent lasers 31 in said laser bar 3 . Said clearance 5 crosses into said solder layer 4 .
- said lasers 31 are electrically isolated each other so that said lasers 31 can be connected in series.
- the current supplied is decreased and significantly reduce the required power supply dimension, thus the manufacturing cost is effectively reduced for the power supply. Meanwhile, the emitting quality of the laser bar 3 will not be influenced either, bringing great convenience to the application of lasers.
- the width of said clearance 5 in the present invention is less than that of adjacent laser 31 for ensuring that the operation performance of a single laser 31 will not be influenced by said clearance 4 .
- Two lasers 31 can be electrically connected in series through a metal wire 6 .
- One end of said metal wire 6 is connected with the laser 31 ; the other end of said metal wire 6 is connected with the insulated layer 2 beneath the adjacent laser 31 .
- With at least one metal wire 6 at least two lasers 31 can be connected in series.
- lasers 31 to be connected in series can also be multiple.
- the number of wires used for connecting lasers depends on the demands for installation.
- a metallic electrode is installed at each joint with the metal wire 6 and the insulated layer 2 .
- a metallic electrode is installed at each joint with the metal wire 6 and the laser 31 .
- Metallic electrodes are helpful for connection of metal wire 6 with the insulated layer 2 and the laser 31 .
- separate power supply can be provided for each laser in accordance with some embodiments of the present invention, enabling them to light separately, which depends on different demands from users.
- a laser package can be achieved as follow: integrating a heat sink 1 , a heat-conducting insulated layer 2 and a laser bar 3 together, cutting a clearance 5 in said laser bar 3 by physical or chemical methods such as engraving, etching and corrosion. Since the relative positions of the laser bar 3 and the heat sink 1 prior to cutting are fixed and no shift of position of said laser bar 3 will be caused by cutting, and the quality of the output light beam from said laser bar 3 will not be influenced by cutting.
- clearance 5 can be cut into the insulated layer 2 and also can be cut through the insulated layer 2 , thus realizing electrically insulation between lasers 31 . It is optimal for said insulated layer to adopt materials with good insulation effect such as AlN and diamond.
- the area of said insulated layer 2 is larger than that of said laser bar, for the ease of serial connection between lasers. In some other embodiments, the area of insulated layer 2 can be equal to or less than that of the laser bar 3 .
- said insulated layer 2 is welded on the surface of said heat sink 1 through said solder layer 4 , in other embodiments, which can also be deposited on the surface of said heat sink by chemical or physical methods and then coat a solder layer on said deposited insulated layer.
Abstract
The present invention provides a semiconductor laser package including a heat sink, a laser bar with a plurality of lasers on the heat sink, an insulated layer arranged between said heat sink and said laser bar, a solder layer combining said insulated layer with said laser bar, and a clearance crossing said solder layer defined between adjacent lasers.
Description
- This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 200820091982.X filed in China on Jan. 30, 2008, the entire contents of which are hereby incorporated by reference.
- 1. Field of the Invention
- The invention is related to semiconductor lasers, in particular to a semiconductor laser package.
- 2. Background
- It is hard for a single semiconductor laser to get high output power. Generally, the output power of a single semiconductor laser device is less than 10 W. To get higher semiconductor laser output power, it is allowed to arrange many individual lasers into a one dimensional laser array. To achieve high quality laser beam in a laser array, it is required that the emitters of all lasers must be strictly positioned in the same plane, that is all light emitters cannot be distorted and must be aligned in a straight line. It is proved that the precise alignment of laser chips is extremely difficult during high power laser packing. Conventionally for making high power lasers, manufacturers just simply cut a wafer into a one dimensional laser array during process, which is normally called a laser bar. A laser bar includes many semiconductor lasers and all lasers are naturally on the same plane. Under working condition, these lasers have to be electrically connected in parallel mode because they are in the same bar and are not totally electrically isolated each other. It is obvious that high current is necessary for driving lasers in a bar because of parallel working mode. For example, for a laser bar with 19 lasers, if 1.5V, 2 A current is required to drive a single laser, 1.5V, 38 A current will be necessary to drive the whole laser bar. Higher current needs thicker wire which means bulky size of power supply, resulting in higher cost of manufacture, increased weight and inconvenience to many applications where the size of laser power supplies is critically requested.
- It is an objective of the present invention to provide a low-cost semiconductor laser package with simple structure against the high cost of lasers caused by large size of power supplies in semiconductor lasers in the existing technologies.
- The present invention provides a semiconductor laser package including a heat sink, a laser bar with a plurality of lasers on the heat sink, an insulated layer arranged between said heat sink and said laser bar, a solder layer combining said insulated layer with said laser bar, and a clearance crossing said solder layer defined between adjacent lasers.
- In said embodiment, the width of said clearance is less than the width of the adjacent laser.
- In another embodiment, said clearance crosses into said insulated layer.
- In another embodiment, said clearance crosses through said insulated layer.
- In said embodiments, the area of said insulated layer is larger than that of said laser bar.
- In said embodiments, said insulated layer is welded on one surface of said heat sink through said solder layer.
- In other embodiments, said insulated layer is deposited on one surface of said heat sink by chemical or physical method, and then coat a solder layer on said insulated layer.
- In said embodiments, at least two lasers are connected in series through at least one metal wire.
- In said embodiments, separate power supply is provided for said laser.
- In said embodiments, a metallic electrode is mounted at the joint with the metal wire and said laser.
- In said embodiments, a metallic electrode is mounted at the joint with the metal wire and said insulated layer.
- Comparing with the conventional technologies, the semiconductor laser package structure in accordance with the present invention defines a clearance between lasers on the laser bar, and power is supplied to lasers connected in series to decrease the current supplied and significantly reduce the power supply size, thus the manufacturing cost is effectively reduced. Meanwhile, the laser beam quality of the laser bar will not be affected, thus bringing great convenience to the application of high power semiconductor lasers.
-
FIG. 1 is a front schematic diagram of a semiconductor laser package in accordance with the present invention, which includes a heat sink, a laser bar, an insulated layer, a solder layer, and a clearance; -
FIG. 2 is a front schematic diagram of a semiconductor laser package with a clearance crossing into an insulated layer in accordance with another embodiment of the present invention; -
FIG. 3 is a front schematic diagram of a semiconductor laser package with a clearance crossing through an insulated layer in accordance with another embodiment of the present invention; -
FIG. 4 is an overview schematic diagram of a semiconductor laser package with lasers connected in series in accordance with the present invention; and -
FIG. 5 is an overview schematic diagram of a semiconductor laser package with lasers respectively connecting with power supplies in accordance with the present invention. - As shown in
FIG. 1 , a semiconductor laser package in accordance with the present invention comprises aheat sink 1 and alaser bar 3 on theheat sink 1. Thelaser bar 3 comprises a plurality of lasers 31 positioned in the same plane. An insulated layer 2 is arranged between saidheat sink 1 and said laser bar 2. A solder layer 4 is arranged on said insulated layer 2. Saidlaser bar 3 and said insulated layer 2 are combined together through said solder layer 4. Aclearance 5 is defined between adjacent lasers 31 in saidlaser bar 3. Saidclearance 5 crosses into said solder layer 4. In the present invention, through setting saidclearance 5 between said lasers 31 on saidlaser bar 3, said lasers 31 are electrically isolated each other so that said lasers 31 can be connected in series. Through supplying power into said lasers 31 connected in series, the current supplied is decreased and significantly reduce the required power supply dimension, thus the manufacturing cost is effectively reduced for the power supply. Meanwhile, the emitting quality of thelaser bar 3 will not be influenced either, bringing great convenience to the application of lasers. - As shown in
FIGS. 1-4 , the width of saidclearance 5 in the present invention is less than that of adjacent laser 31 for ensuring that the operation performance of a single laser 31 will not be influenced by said clearance 4. Two lasers 31 can be electrically connected in series through ametal wire 6. One end of saidmetal wire 6 is connected with the laser 31; the other end of saidmetal wire 6 is connected with the insulated layer 2 beneath the adjacent laser 31. With at least onemetal wire 6, at least two lasers 31 can be connected in series. By setting a plurality ofmetal wires 6, lasers 31 to be connected in series can also be multiple. - The number of wires used for connecting lasers depends on the demands for installation. A metallic electrode is installed at each joint with the
metal wire 6 and the insulated layer 2. A metallic electrode is installed at each joint with themetal wire 6 and the laser 31. Metallic electrodes are helpful for connection ofmetal wire 6 with the insulated layer 2 and the laser 31. - As shown in
FIG. 5 , separate power supply can be provided for each laser in accordance with some embodiments of the present invention, enabling them to light separately, which depends on different demands from users. - In accordance with some embodiments of the present invention, a laser package can be achieved as follow: integrating a
heat sink 1, a heat-conducting insulated layer 2 and alaser bar 3 together, cutting aclearance 5 in saidlaser bar 3 by physical or chemical methods such as engraving, etching and corrosion. Since the relative positions of thelaser bar 3 and theheat sink 1 prior to cutting are fixed and no shift of position of saidlaser bar 3 will be caused by cutting, and the quality of the output light beam from saidlaser bar 3 will not be influenced by cutting. - As shown in
FIGS. 2 and 3 , in semiconductor lasers in accordance with the above-mentioned embodiments of the present invention,clearance 5 can be cut into the insulated layer 2 and also can be cut through the insulated layer 2, thus realizing electrically insulation between lasers 31. It is optimal for said insulated layer to adopt materials with good insulation effect such as AlN and diamond. - As shown in
FIGS. 4 and 5 , the area of said insulated layer 2 is larger than that of said laser bar, for the ease of serial connection between lasers. In some other embodiments, the area of insulated layer 2 can be equal to or less than that of thelaser bar 3. - As shown in
FIGS. 1-3 , said insulated layer 2 is welded on the surface of saidheat sink 1 through said solder layer 4, in other embodiments, which can also be deposited on the surface of said heat sink by chemical or physical methods and then coat a solder layer on said deposited insulated layer.
Claims (11)
1. A semiconductor laser package, comprising:
a heat sink,
a laser bar comprising a plurality of lasers on the heat sink,
an insulated layer arranged between said heat sink and said laser bar,
a solder layer combining said insulated layer with said laser bar, and
a clearance crossing said solder layer defined between adjacent lasers.
2. The semiconductor laser package as claimed in claim 1 , wherein the width of said clearance is less than the width of the adjacent laser.
3. The semiconductor laser package as claimed in claim 1 , wherein said clearance crosses into said insulated layer.
4. The semiconductor laser package as claimed in claim 1 , wherein said clearance crosses through said insulated layer.
5. The semiconductor laser package as claimed in claim 1 , wherein the area of said insulated layer is larger than that of said laser bar.
6. The semiconductor laser package as claimed in claim 1 , wherein said insulated layer is welded on one surface of said heat sink through said solder layer.
7. The semiconductor laser package as claimed in claim 1 , wherein said insulated layer is deposited on one surface of said heat sink by chemical or physical method, and then coat a solder layer on said insulated layer.
8. The semiconductor laser package as claimed in claim 1 , wherein at least two lasers are connected in series through at least one metal wire.
9. The semiconductor laser package as claimed in claim 8 , wherein separate power supply is provided for said laser.
10. The semiconductor laser package as claimed in claim 8 , wherein a metallic electrode is mounted at the joint with the metal wire and said laser.
11. The semiconductor laser package as claimed in claim 8 , wherein a metallic electrode is mounted at the joint with the metal wire and said insulated layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU200820091982XU CN201199606Y (en) | 2008-01-30 | 2008-01-30 | Packaging structure of semiconductor laser |
CN200820091982.X | 2008-01-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090190619A1 true US20090190619A1 (en) | 2009-07-30 |
Family
ID=40450756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/363,103 Abandoned US20090190619A1 (en) | 2008-01-30 | 2009-01-30 | Semiconductor laser package |
Country Status (2)
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US (1) | US20090190619A1 (en) |
CN (1) | CN201199606Y (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103532006A (en) * | 2013-10-21 | 2014-01-22 | 重庆航伟光电科技有限公司 | Semiconductor laser |
CN103633549A (en) * | 2012-08-30 | 2014-03-12 | 苏州长光华芯光电技术有限公司 | Packaging method of semiconductor laser array single chip |
EP2797186A4 (en) * | 2011-12-20 | 2015-08-12 | Xi An Focuslight Technologies Co Ltd | Conductively cooled high-power semiconductor laser and preparation method thereof |
CN105182548A (en) * | 2015-10-30 | 2015-12-23 | 山东华光光电子有限公司 | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device |
WO2016162340A1 (en) * | 2015-04-09 | 2016-10-13 | Dilas Diodenlaser Gmbh | Monolithic diode laser arrangement |
WO2017223050A1 (en) * | 2016-06-20 | 2017-12-28 | TeraDiode, Inc. | Packages for high-power laser devices |
JP2018508979A (en) * | 2015-02-18 | 2018-03-29 | ツーシックス、インコーポレイテッドIi−Vi Incorporated | Structure of closely spaced laser diodes |
JP2019047117A (en) * | 2017-08-31 | 2019-03-22 | 日亜化学工業株式会社 | Method for manufacturing light-emitting device and light-emitting device |
DE102019121384A1 (en) * | 2019-08-07 | 2021-02-11 | Forschungsverbund Berlin E.V. | Optical pulse generator and method for operating an optical pulse generator with high power and short pulses |
US11095091B2 (en) | 2016-06-20 | 2021-08-17 | TeraDiode, Inc. | Packages for high-power laser devices |
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CN102237636B (en) * | 2010-04-26 | 2013-08-14 | 无锡亮源激光技术有限公司 | Multi-tube serial semiconductor laser module and manufacturing method thereof |
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- 2008-01-30 CN CNU200820091982XU patent/CN201199606Y/en not_active Expired - Fee Related
-
2009
- 2009-01-30 US US12/363,103 patent/US20090190619A1/en not_active Abandoned
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US5394426A (en) * | 1992-11-13 | 1995-02-28 | Hughes Aircraft Company | Diode laser bar assembly |
US6028878A (en) * | 1996-01-29 | 2000-02-22 | Opto Power Corporation | Laser diode array with built-in current and voltage surge protection |
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Cited By (16)
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---|---|---|---|---|
EP2797186A4 (en) * | 2011-12-20 | 2015-08-12 | Xi An Focuslight Technologies Co Ltd | Conductively cooled high-power semiconductor laser and preparation method thereof |
CN103633549A (en) * | 2012-08-30 | 2014-03-12 | 苏州长光华芯光电技术有限公司 | Packaging method of semiconductor laser array single chip |
CN103532006A (en) * | 2013-10-21 | 2014-01-22 | 重庆航伟光电科技有限公司 | Semiconductor laser |
JP2018508979A (en) * | 2015-02-18 | 2018-03-29 | ツーシックス、インコーポレイテッドIi−Vi Incorporated | Structure of closely spaced laser diodes |
WO2016162340A1 (en) * | 2015-04-09 | 2016-10-13 | Dilas Diodenlaser Gmbh | Monolithic diode laser arrangement |
KR20170134528A (en) * | 2015-04-09 | 2017-12-06 | 딜라스 다이오덴레이저 게엠베하 | Monolithic Diode Laser Arrangement |
CN107567671A (en) * | 2015-04-09 | 2018-01-09 | 迪拉斯二极管有限公司 | One chip diode laser arrangement |
JP2018511948A (en) * | 2015-04-09 | 2018-04-26 | ディラス ディオーデンレーザー ゲゼルシャフト ミット ベシュレンクテル ハフツング | Monolithic semiconductor laser device |
KR102044732B1 (en) * | 2015-04-09 | 2019-11-14 | 딜라스 다이오덴레이저 게엠베하 | Monolithic Diode Laser Arrangement |
CN105182548A (en) * | 2015-10-30 | 2015-12-23 | 山东华光光电子有限公司 | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device |
WO2017223050A1 (en) * | 2016-06-20 | 2017-12-28 | TeraDiode, Inc. | Packages for high-power laser devices |
JP2019526165A (en) * | 2016-06-20 | 2019-09-12 | テラダイオード, インコーポレーテッド | Package for high power laser devices |
US10490972B2 (en) | 2016-06-20 | 2019-11-26 | TeraDiode, Inc. | Packages for high-power laser devices |
US11095091B2 (en) | 2016-06-20 | 2021-08-17 | TeraDiode, Inc. | Packages for high-power laser devices |
JP2019047117A (en) * | 2017-08-31 | 2019-03-22 | 日亜化学工業株式会社 | Method for manufacturing light-emitting device and light-emitting device |
DE102019121384A1 (en) * | 2019-08-07 | 2021-02-11 | Forschungsverbund Berlin E.V. | Optical pulse generator and method for operating an optical pulse generator with high power and short pulses |
Also Published As
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Owner name: SHENZHEN CENTURY EPITECH PHOTONICS TECHNOLOGY CO. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:QI, HAIHUA;XIONG, BIFENG;JIANG, BIN;AND OTHERS;REEL/FRAME:022182/0989 Effective date: 20090127 |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |