CN107017545A - One kind improves Nd:The method and device of YAG laser output characteristics - Google Patents
One kind improves Nd:The method and device of YAG laser output characteristics Download PDFInfo
- Publication number
- CN107017545A CN107017545A CN201710449011.1A CN201710449011A CN107017545A CN 107017545 A CN107017545 A CN 107017545A CN 201710449011 A CN201710449011 A CN 201710449011A CN 107017545 A CN107017545 A CN 107017545A
- Authority
- CN
- China
- Prior art keywords
- yag
- mirror
- output characteristics
- laser output
- free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Abstract
Nd is improved the invention discloses one kind:The method and device of YAG laser output characteristics, belongs to laser manufacture field, and described device includes trapezoidal lath gain medium, pumping source, total reflective mirror, cylindrical mirror, diaphragm, outgoing mirror;Described trapezoidal lath gain medium is the sapphire Nd of bonding:YAG crystal laths;The fuel factor of hot slab laser is reduced using the bonding techniques of non-same material, power output and beam quality is improved.The laser of high-output power and high light beam quality is exported during using the good heat conduction of sapphire to realize glancing incidence slab laser free oscillation operation.
Description
Technical field
The present invention relates to a kind of Nd:The crystal that YAG is bonded with sapphire, and make using it vibration of lath profile pump
Device, the method for reducing the fuel factor of slab laser by the good heat conduction of sapphire to improve output characteristics, belongs to laser
Device manufactures field.
Background technology
Because LD pumping plate solid lasers have the advantages that compact conformation, efficiency high, good beam quality, in industry neck
Application prospect in domain is boundless, is the study hotspot of current laser field.But with the raising of pump power, laser is situated between
The fuel factor of matter turns into the key factor of restriction high-output power and high light beam quality.The present invention utilizes the high thermal conductivity of sapphire
Rate, by by sapphire and Nd:YAG Direct Bondings serve as the heat that the method for gain media effectively reduces slab laser
Effect, so as to improve the output characteristics of slab laser.There is presently no pass through sapphire and Nd:YAG Direct Bonding is come
Weaken lath fuel factor to obtain the report of high-power and high-lighting beam quality
The content of the invention
It is an object of the invention to pass through sapphire and Nd:The technology of YAG Direct Bondings, utilizes the good heat conduction of sapphire
The laser output of high-output power and high light beam quality during realizing glancing incidence slab laser free oscillation operation.
One kind improves Nd:The device of YAG free-running laser output characteristics, the device includes sapphire and Nd:YAG's
Trapezoidal lath gain medium 1, pumping source 2, total reflective mirror 3, cylindrical mirror 4, diaphragm 5, outgoing mirror 6 that bonded crystals are made;Pump
Cylindrical mirror 4 is placed with the exit positions in Pu source 2, the pump light that pumping source 2 is sent arrives trapezoidal lath gain after cylindrical mirror 4
The bottom surface of medium 1.Total reflective mirror 3 and the symmetrically placed tangent plane both sides in trapezoidal lath gain media 1 of outgoing mirror 6, diaphragm 5 are placed
Between total reflective mirror 3 and outgoing mirror 6.The laser produced between total reflective mirror 3 and outgoing mirror 6 is under trapezoidal lath gain media 1
Bottom surface (pumping optical pumping face) carries out multiple total reflection.Described trapezoidal lath gain medium 1 is the sapphire Nd of bonding:
YAG crystal laths;
The trapezoidal lath gain medium 1 is sapphire and Nd:YAG bonded crystals.
Described pumping source 2 is four peak power 500w semiconductor bar bar storehouse.
The total reflective mirror 3 is coated with wavelength 1064nm 0 degree of film that is all-trans.
The cylindrical mirror 4 is focal length 70mm cylindrical mirror, and the pump light for launching pumping source 2 carries out vertical direction
Focus on.
The diaphragm 5 is diameter 1.5mm circular hole diaphragm.
The outgoing mirror 6 is that transmitance is 30%.
One kind improves Nd:The method of YAG free-running laser output characteristics.The first step, by sapphire and Nd:YAG is brilliant
Body is bonded directly to is made bonded crystals together.This bonded crystals is served as gain media and is put into glancing incidence lath and swashed by second step
It can then be obtained than single Nd in light device:YAG crystal serves as more preferable output characteristics during gain media.
The present invention realizes Nd with brand-new thinking:YAG slab lasers high-output power, high light beam quality laser it is defeated
Go out, in existing Nd:On the basis of YAG slab lasers, with advantages below:
1st, high-output power;
2nd, more preferable beam quality;
3rd, fuel factor is obviously reduced;
4th, it is easily achieved engineer applied.
5th, the present invention has substantial feature and marked improvement, and method of the present invention can be widely applied to Nd:
In YAG slab lasers, the efficiency, power output and beam quality of laser can be significantly improved.
Brief description of the drawings
Fig. 1 is new lath laser oscillator schematic diagram.
Fig. 2 is Nd:YAG and sapphire bonded crystals and monolithic Nd:YAG schematic diagrames.
Under Fig. 3 difference electric currents, bonded crystals and Nd:The power output of YAG monolithics.
Embodiment
1 to Fig. 2 this new pattern laser oscillator is described further below in conjunction with the accompanying drawings:
Refering to Fig. 1, Fig. 1 is slab laser oscillator structure figure.As seen from Figure 1, this oscillator is increased by trapezoidal slab laser
Beneficial medium 1, pumping source 2, total reflective mirror 3, cylindrical mirror 4, diaphragm 5, outgoing mirror 6 are constituted.
The trapezoidal lath gain medium is sapphire and Nd:YAG bonded crystals.
Described pumping source is four peak power 500w semiconductor bar bar storehouse.
The total reflective mirror is all-trans for 0 degree of 1064.
The cylindrical mirror is focal length 70mm cylindrical mirror, for the focusing to pump light vertical direction.
The diaphragm is diameter 1.5mm circular hole diaphragm.
The outgoing mirror is the outgoing mirror of transmitance 30%.It constitutes a resonator with total reflective mirror.
In traditional Nd:During YAG slab laser oscillator operations, glancing incidence battened construction due to pumping inhomogeneities and
The inhomogeneities of cooling result in the uneven of heat distribution in medium, so as to generate the thermal effects such as thermal lens in a thickness direction
Should.It can be said that being the problem of slab laser is maximum the problem of heat.
Refering to Fig. 2, Fig. 2 show bonded crystals and common Nd:The contrast of YAG modules, it can be seen that its side is bonded
One piece of sapphire crystal.Because sapphire does not absorb for pump light in itself, so the efficiency of pumping is not interfered with, and by
It has been bonded directly to together in both, has formed stable covalent bond between the two, therefore in Nd:YAG can be quickly when producing hot
Gone by sapphire export so that the used heat that produces when effectively reducing laser concussion, so slab laser can be effectively reduced
The fuel factor problem of device.
The experimental study of the output characteristic of laser of para-linkage crystal raising below is illustrated.Identical size is respectively adopted
Bonded crystals and monolithic Nd:YAG is as gain media, using experimental provision shown in Fig. 1, in repetition 200Hz, the μ s' of pulsewidth 240
Under power supply, the power output under different electric currents is measured.
From figure 3, it can be seen that the threshold value of bonded crystals is less than Nd:YAG monolithics, at low currents, bonded crystals and Nd:
The power output of YAG monolithics is more or less the same, but after 300A, Nd:Due to fuel factor substantially, power output is already for YAG monolithics
Begin to decline, but the power output of bonded crystals is still rising.Just it is decreased obviously when 380A.
Measured in pumping current 250A in both far-field spots, be bonded Nd:It is on YAG beam quality x directions
It is 2.13. monolithics Nd on 1.71, y directions:It is 2.4 on 1.88, y directions to be on YAG beam quality x directions.
The present invention devises a kind of slab laser oscillator of utilization novel gain medium, utilizes sapphire and gain media
Direct Bonding reduce the influence of lath fuel factor, so as to improve the power output and beam quality of laser.
Claims (8)
1. one kind improves Nd:The device of YAG free-running laser output characteristics, it is characterised in that:The device includes sapphire
With Nd:Trapezoidal lath gain medium (1) that YAG bonded crystals are made, pumping source (2), total reflective mirror (3), cylindrical mirror
(4), diaphragm (5), outgoing mirror (6);Cylindrical mirror (4), the pump that pumping source (2) is sent are placed with the exit positions of pumping source (2)
Pu light arrives the bottom surface of trapezoidal lath gain media (1) after cylindrical mirror (4);Total reflective mirror (3) and outgoing mirror (6) are symmetrically placed
In the tangent plane both sides of trapezoidal lath gain media (1), diaphragm (5) is positioned between total reflective mirror (3) and outgoing mirror (6);Total reflective mirror
(3) laser produced between outgoing mirror (6) carries out multiple total reflection in the bottom surface of trapezoidal lath gain media (1);It is described
Trapezoidal lath gain medium (1) to be bonded sapphire Nd:YAG crystal laths.
2. a kind of raising Nd according to claim 1:The device of YAG free-running laser output characteristics, its feature exists
In:The trapezoidal lath gain medium (1) is sapphire and Nd:YAG bonded crystals.
3. a kind of raising Nd according to claim 1:The device of YAG free-running laser output characteristics, its feature exists
In:Described pumping source (2) is four peak power 500w semiconductor bar bar storehouse.
4. a kind of raising Nd according to claim 1:The device of YAG free-running laser output characteristics, its feature exists
In:The total reflective mirror (3) is coated with wavelength 1064nm 0 degree of film that is all-trans.
5. a kind of raising Nd according to claim 1:The device of YAG free-running laser output characteristics, its feature exists
In:The cylindrical mirror (4) is focal length 70mm cylindrical mirror, and the pump light for launching pumping source (2) carries out vertical direction
Focus on.
6. a kind of raising Nd according to claim 1:The device of YAG free-running laser output characteristics, its feature exists
In:The diaphragm (5) is diameter 1.5mm circular hole diaphragm.
7. a kind of raising Nd according to claim 1:The device of YAG free-running laser output characteristics, its feature exists
In:The outgoing mirror (6) is that transmitance is 30%.
8. a kind of raising Nd carried out using claim 1 described device:The method of YAG free-running laser output characteristics,
It is characterized in that:This method comprises the following steps, the first step, by sapphire and Nd:YAG crystal is bonded directly to is made key together
Synthetic body;Second step, this bonded crystals is served as into gain media being put into glancing incidence slab laser can then obtain than single
Nd:YAG crystal serves as more preferable output characteristics during gain media.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710449011.1A CN107017545A (en) | 2017-06-14 | 2017-06-14 | One kind improves Nd:The method and device of YAG laser output characteristics |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710449011.1A CN107017545A (en) | 2017-06-14 | 2017-06-14 | One kind improves Nd:The method and device of YAG laser output characteristics |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107017545A true CN107017545A (en) | 2017-08-04 |
Family
ID=59453175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710449011.1A Pending CN107017545A (en) | 2017-06-14 | 2017-06-14 | One kind improves Nd:The method and device of YAG laser output characteristics |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107017545A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107946890A (en) * | 2017-11-21 | 2018-04-20 | 湖北久之洋红外系统股份有限公司 | A kind of mechanism of diaphragm based on Zig Zag laths |
CN109149350A (en) * | 2018-10-08 | 2019-01-04 | 安徽环巢光电科技有限公司 | A kind of double clad disc waveguide laser crystal |
CN109193335A (en) * | 2018-10-08 | 2019-01-11 | 安徽环巢光电科技有限公司 | The preparation method of double clad disc waveguide laser crystal |
CN109586152A (en) * | 2019-01-18 | 2019-04-05 | 东莞理工学院 | Pumping configuration for high power glancing incidence slab laser beamquality improvement |
CN113258418A (en) * | 2021-07-16 | 2021-08-13 | 四川光天下激光科技有限公司 | Laser amplification system |
CN115084982A (en) * | 2022-07-15 | 2022-09-20 | 中国工程物理研究院应用电子学研究所 | Lath laser amplification gain module for high peak power laser |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6167069A (en) * | 1998-05-01 | 2000-12-26 | The Regents Of The University Of California | Thermal lens elimination by gradient-reduced zone coupling of optical beams |
CN203150893U (en) * | 2013-01-16 | 2013-08-21 | 北京工业大学 | Multi-way slab laser amplifier |
CN105390917A (en) * | 2015-12-08 | 2016-03-09 | 南京先进激光技术研究院 | Compact and stable high-peak-power optical fiber output laser |
-
2017
- 2017-06-14 CN CN201710449011.1A patent/CN107017545A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6167069A (en) * | 1998-05-01 | 2000-12-26 | The Regents Of The University Of California | Thermal lens elimination by gradient-reduced zone coupling of optical beams |
CN203150893U (en) * | 2013-01-16 | 2013-08-21 | 北京工业大学 | Multi-way slab laser amplifier |
CN105390917A (en) * | 2015-12-08 | 2016-03-09 | 南京先进激光技术研究院 | Compact and stable high-peak-power optical fiber output laser |
Non-Patent Citations (2)
Title |
---|
M.J.DAMZEN 等: ""Continuous-wave Nd : YVO4 grazing-incidence laser with 22.5 W output power and 64% conversion efficiency"", 《OPTICS COMMUNICATIONS》 * |
程思齐: ""短脉宽高重频掠入射板条激光放大器的研究"", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107946890A (en) * | 2017-11-21 | 2018-04-20 | 湖北久之洋红外系统股份有限公司 | A kind of mechanism of diaphragm based on Zig Zag laths |
CN109149350A (en) * | 2018-10-08 | 2019-01-04 | 安徽环巢光电科技有限公司 | A kind of double clad disc waveguide laser crystal |
CN109193335A (en) * | 2018-10-08 | 2019-01-11 | 安徽环巢光电科技有限公司 | The preparation method of double clad disc waveguide laser crystal |
CN109586152A (en) * | 2019-01-18 | 2019-04-05 | 东莞理工学院 | Pumping configuration for high power glancing incidence slab laser beamquality improvement |
CN109586152B (en) * | 2019-01-18 | 2024-03-12 | 东莞理工学院 | Pump structure for improved beam quality of high power grazing incidence slab laser |
CN113258418A (en) * | 2021-07-16 | 2021-08-13 | 四川光天下激光科技有限公司 | Laser amplification system |
CN113258418B (en) * | 2021-07-16 | 2021-12-21 | 四川光天下激光科技有限公司 | Laser amplification system |
CN115084982A (en) * | 2022-07-15 | 2022-09-20 | 中国工程物理研究院应用电子学研究所 | Lath laser amplification gain module for high peak power laser |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107017545A (en) | One kind improves Nd:The method and device of YAG laser output characteristics | |
WO2021128828A1 (en) | End-pump multi-pass slab laser amplifier | |
WO2008055390A1 (en) | Third harmonic ultraviolet laser of semiconductor double end face pumping | |
CN105305207A (en) | End-pumped single-pass traveling wave laser amplifier | |
CN110086070B (en) | Novel thin-chip laser structure with high pumping absorption and high power output | |
CN103779772A (en) | Laser module using combination pumping coupling and solid-state laser | |
CN113889831A (en) | Compact type strip pulse laser | |
CN105182548A (en) | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device | |
CN204809628U (en) | Laser | |
CN102064469A (en) | Diode pumping slab fixed laser | |
CN103427322A (en) | Laser diode pumping multicrystal Q-switched laser | |
CN104051949A (en) | High-efficiency compact end surface pumping lath laser amplifier apparatus | |
CN111769431A (en) | Structure for increasing one-way gain of angular side pumping and implementation method | |
CN104319603A (en) | Strip laser amplifier and laser output method thereof | |
CN106486885A (en) | Solid state laser | |
CN110289549B (en) | Semiconductor laser chip, packaging method thereof and semiconductor laser | |
CN111668692A (en) | Laser material module for micron-waveband solid laser | |
CN208368938U (en) | A kind of Q-switched laser of semiconductor laser pumping | |
CN201478678U (en) | Tension type folding-cavity laser | |
CN203722049U (en) | High power thin type laser module packaging structure and high-power laser packaging | |
JPWO2013073024A1 (en) | Semiconductor laser pumped solid state laser | |
WO2012088787A1 (en) | Green laser device | |
CN101837515A (en) | Solar silicon cell nanosecond-pulse green laser scriber | |
CN103532003A (en) | Side pump laser module for double-wave-length integrated pumping | |
CN102280811A (en) | Pulsed solid state laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170804 |
|
RJ01 | Rejection of invention patent application after publication |