CN109787084A - A kind of the semiconductor laser array encapsulating structure and production method of high efficiency and heat radiation - Google Patents
A kind of the semiconductor laser array encapsulating structure and production method of high efficiency and heat radiation Download PDFInfo
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- CN109787084A CN109787084A CN201910201556.XA CN201910201556A CN109787084A CN 109787084 A CN109787084 A CN 109787084A CN 201910201556 A CN201910201556 A CN 201910201556A CN 109787084 A CN109787084 A CN 109787084A
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- heat sink
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Abstract
The invention belongs to field of laser device technology, more particularly to the semiconductor laser array encapsulating structure and production method of a kind of high efficiency and heat radiation.A kind of semiconductor laser array encapsulating structure of high efficiency and heat radiation, including basis are heat sink, and the heat sink upper setting auxiliary in basis is heat sink, the heat sink upper setting transition heat sink of auxiliary, and semiconductor laser array is arranged in the transition heat sink.The present invention solves the problems, such as the poor thermal conduction of existing Superpower semiconductor laser array encapsulation, improves the heat dissipation performance and photoelectric conversion efficiency of semiconductor laser array, improves laser service life.
Description
Technical field
The invention belongs to field of laser device technology, encapsulate more particularly to a kind of semiconductor laser array of high efficiency and heat radiation
Structure and production method.
Background technique
Semiconductor laser, also known as laser diode (Laser Diode) are meant with III-V race of direct band gap, IV-
VI race, II-VI compounds of group and its solid-solution material are a kind of laser of operation material, from last century early sixties birth
It is just incomparable with conventional lasers such as small in size, light-weight, electro-optical efficiency is high, the service life is long, reliability height after life
Advantage and be developing progressively the core devices one of mostly important for modern optoelectronic devices field.
Semiconductor laser array is also known as laser diode bar item, abbreviation bar item.According to power needs, several lists
Member is grown on the same substrate to nearly laser diode of Unit thousand with metal organic chemical vapor deposition (MOCVD), is just constituted
One-dimensional array.Linear array comprising tens units is phase-locked array, and functionization output only has several watts, because of the unit for including in array
Number increase to active area width meet or exceed chamber it is long when, lateral lasing and amplified spontaneous emission (ASE) will affect required
Normal lasing, to limit the increase of output power.If complex array is divided into group, every group as unit of 19 units, respectively
It is separated between group with light isolation technology, the light that each group issues is irrelevant each other, forms multiple aperture lasing, so that it may be collected by increasing
Output power is improved at quantity.
With the development of semiconductor laser technology, requirement of the people to its output power is gradually increased, and leads to semiconductor
Chip of laser junction temperature increases, especially large power semiconductor laser array.As the raising of junction temperature makes semiconductor laser battle array
The wavelength of column broadens, and threshold current increases, photoelectric conversion efficiency decline, service life reduction, reliability decrease.Therefore semiconductor laser
Device encapsulation technology becomes particularly significant.
In recent years, graphite because with layer to good conductive thermal conductive property arouse great concern, graphite monocrystalline
Face thermal coefficient may be up to 2200W/MK.In addition, graphite also has many advantages, such as that good mechanical property, density are low, thermal expansion coefficient is small.
Therefore, graphite is considered as a kind of novel highly heat-conductive material for having very much development potentiality.
Temperature constantly increases high-power semiconductor laser during the work time, wants to conventional package and heat sink material
Ask higher and higher, there is an urgent need to a kind of novel high-thermal conductivity high materials to improve capsulation structure for semiconductor laser thermal conductivity.Therefore, exist
In semiconductor laser encapsulation, how more efficiently to reduce the operating temperature of semiconductor laser is a major issue.
Summary of the invention
To solve the problems, such as above-mentioned background technique, the present invention provides a kind of semiconductor lasers of high efficiency and heat radiation
Array encapsulation structure solves the problems, such as the poor thermal conduction of existing Superpower semiconductor laser array encapsulation, improves and partly lead
The heat dissipation performance and photoelectric conversion efficiency of body laser array improve laser service life.
Technical proposal that the invention solves the above-mentioned problems is: a kind of semiconductor laser array encapsulation knot of high efficiency and heat radiation
Structure is characterized in that
Heat sink including basis, the heat sink upper setting auxiliary in basis is heat sink, the heat sink upper setting transition heat sink of auxiliary, institute
It states and semiconductor laser array is set in transition heat sink.
Further, it is graphite-copper composite heat sink that above-mentioned auxiliary is heat sink.
Further, it is that copper is heat sink that above-mentioned basis is heat sink；The transition heat sink is aluminium nitride heat sink.
Further, above-mentioned graphite-copper composite heat sink includes upper layer, middle layer and lower layer, and the middle layer is graphite flake,
The upper and lower are copper, and the graphite flake is equipped with through-hole, the quantity of through-hole be it is multiple, copper post, copper post point are equipped in through-hole
It is not connect with upper layer, lower layer.
Further, above-mentioned basis is heat sink and auxiliary it is heat sink between welded by golden tin solder；The heat sink and transition of the auxiliary
Heat sink passes through golden tin solder welding.
Further, above-mentioned basis is heat sink, auxiliary is heat sink, and rear surface is placed in cooling surface；It sets the lower surface that the basis is heat sink
In cooling surface.
In addition, the present invention also proposes a kind of production side of the semiconductor laser array encapsulating structure of above-mentioned high efficiency and heat radiation
Method is characterized in that, comprising the following steps:
1) graphite-copper composite heat sink is made
1.1) graphite flake is provided；
1.2) through-hole is processed on graphite flake；
1.3) become graphite-copper composite heat sink after carrying out metalized to graphite flake using electrochemical method；
2) provide copper it is heat sink, by graphite-copper composite heat sink be welded on copper it is heat sink on；
3) aluminium nitride heat sink is provided, aluminium nitride heat sink is welded on graphite-copper composite heat sink；
4) semiconductor laser array is provided, semiconductor laser array is welded in aluminium nitride heat sink.
Further, above-mentioned steps 1.2) in, use radius to process on graphite flake for the drill bit of 0.2mm or laser drill
Through-hole.
Further, above-mentioned steps 1.3) in, metalized is carried out to graphite flake using electrochemical method specifically: first
First, graphite flake is cleaned with ethyl alcohol, is basic plating solution with sulfuric acid solution, using phosphorous copper sheet as anode, graphite flake is cathode, in electric current
Density is 2A dm-2Under conditions of, Cu is plated in the two sides and micropore inside of graphite flake, the sulfuric acid solution is 0.32M
CuSO4*5H2O、0.30M H2SO4Manufactured mixed liquor.
Advantages of the present invention:
Graphite-carbon/carbon-copper composite material, graphite flake after metallization is arranged copper is heat sink in the present invention between aluminium nitride heat sink
Copper post is filled inside through-hole, the heat generated from semiconductor laser array can be by copper post to conducting inside graphite flake, more
The lower deficiency of graphite flake longitudinal direction thermal conductivity is mended；Using the higher lateral thermal conductivity of graphite flake, the heat dissipation of encapsulating structure is improved
Ability, the photoelectric conversion efficiency and service life of semiconductor laser array.
Detailed description of the invention
Fig. 1 is a kind of semiconductor laser array package structure diagram of high efficiency and heat radiation of the present invention；
Fig. 2 is the schematic diagram of graphite flake in the present invention；
Fig. 3 is a kind of flow chart of the semiconductor laser array encapsulating structure production method of high efficiency and heat radiation of the present invention.
In figure: 1- graphite-copper composite heat sink；2- semiconductor laser array, 3- aluminium nitride heat sink, 4- copper is heat sink, 5- is logical
Hole；6- graphite flake.
Specific embodiment
To keep the purposes, technical schemes and advantages of embodiment of the present invention clearer, implement below in conjunction with the present invention
The technical solution in embodiment of the present invention is clearly and completely described in attached drawing in mode, it is clear that described reality
The mode of applying is some embodiments of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ability
Domain those of ordinary skill every other embodiment obtained without creative efforts, belongs to the present invention
The range of protection.Therefore, the detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit below and is wanted
The scope of the present invention of protection is sought, but is merely representative of selected embodiment of the invention.Based on the embodiment in the present invention,
Every other embodiment obtained by those of ordinary skill in the art without making creative efforts belongs to this
Invent the range of protection.
Referring to Fig. 1, a kind of semiconductor laser array encapsulating structure of high efficiency and heat radiation, including basic heat sink, the basis
Heat sink upper setting auxiliary is heat sink, the heat sink upper setting transition heat sink of auxiliary, and semiconductor laser is arranged in the transition heat sink
Array 2.The basis is heat sink and auxiliary it is heat sink between welded by golden tin solder；The auxiliary is heat sink to pass through gold between transition heat sink
Tin solder welding.
It is graphite-copper composite heat sink 1 that the auxiliary is heat sink；It is copper heat sink 4 that the basis is heat sink；The transition heat sink is nitrogen
Change Aluminum Heat Sink 3.
The graphite-copper composite heat sink 1 include upper layer, middle layer and lower layer, the middle layer be graphite flake 6, upper layer and
Lower layer is copper, and the graphite flake 6 is equipped with through-hole 5, the quantity of through-hole 5 be it is multiple, copper post, copper post difference are equipped in through-hole 5
It is connect with upper layer, lower layer.
In a particular embodiment, copper heat sink 4, graphite-copper composite heat sink 1, aluminium nitride heat sink 3 and semiconductor laser array
2 front surfaces are in one plane.In a particular embodiment, the rear surface of copper heat sink 4 and graphite-copper composite heat sink 1 with it is cold
But face is in contact, which can flow cooling surface for constant temperature solid conduction cooling surface, liquid.
In a particular embodiment, heat sink 4 lower surface of copper is in contact with cooling surface, which can be cold for constant temperature solid conduction
But face, liquid flow cooling surface.
As optional embodiment, the lower surface size of graphite-copper composite heat sink 1 is not more than the upper surface of copper heat sink 4
Size.
In a particular embodiment, 1 lower surface of graphite-copper composite heat sink is identical as the heat sink 4 upper surface size of copper.
As optional embodiment, aluminium nitride heat sink 3 is located at the upper surface of graphite-copper composite heat sink 1.It is being embodied
In example, aluminium nitride heat sink 3 is in the upper surface middle position of graphite-copper composite heat sink 1, and the two front surface is in one plane.
As optional embodiment, 5 position of through-hole is located in 3 perspective plane of aluminium nitride heat sink.In a particular embodiment, lead to
5 position of hole is located in each luminescence unit perspective plane of semiconductor laser array 2.
Semiconductor laser array encapsulating structure provided in an embodiment of the present invention, between copper heat sink 4 and aluminium nitride heat sink 3
It is in contact added with graphite-copper composite heat sink 1, and in encapsulating structure lower surface with rear surface with cooling surface.Using this semiconductor
Laser array encapsulating structure can be improved the heat-sinking capability of encapsulating structure, the photoelectric conversion efficiency of semiconductor laser array
And service life.
Referring to Fig. 3, a kind of production method of the semiconductor laser array encapsulating structure of high efficiency and heat radiation, including following step
It is rapid:
1) graphite-copper composite heat sink is made
1.1) graphite flake 6 is provided.
1.2) through-hole 5 referring to fig. 2, is processed on graphite flake 6；Each logical distance between borehole and semiconductor laser array 2 are respectively sent out
Light unit spacing is identical；Specifically, radius is used to process through-hole 5 on graphite flake 6 for the drill bit of 0.2mm or laser drill.
1.3) become graphite-copper composite heat sink 1 after carrying out metalized to graphite flake 6 using electrochemical method.Specifically
Ground carries out metalized to graphite flake 6 using electrochemical method specifically: firstly, graphite flake 6 is cleaned with ethyl alcohol, with sulfuric acid
Solution is basic plating solution, and using phosphorous copper sheet as anode, graphite flake 6 is cathode, is 2A dm in current density-2Under conditions of, by Cu
In being plated in inside the two sides and micropore of graphite flake 6, the sulfuric acid solution is 0.32M CuSO4*5H2O、0.30M H2SO4It is manufactured
Mixed liquor.
2) copper heat sink 4 is provided, graphite-copper composite heat sink 1 is welded on copper heat sink 4.Specifically, first heat sink to copper 4 into
Row cleaning treatment, then the upper surface of copper heat sink 4 and the lower surface of graphite-copper composite heat sink 1 are passed through into golden tin solder and welded.
3) aluminium nitride heat sink 3 is provided, aluminium nitride heat sink 3 is welded on graphite-copper composite heat sink 1.Specifically, it will nitrogenize
The lower surface of Aluminum Heat Sink 3 and the upper surface of graphite-copper composite heat sink 1 pass through golden tin solder and weld.
4) semiconductor laser array 2 is provided, semiconductor laser array 2 is welded in aluminium nitride heat sink 3.Specifically
Ground, is that semiconductor laser array 2 is put on workbench, semiconductor laser array is sucked using chip mounter, P is faced
Under.Semiconductor laser array 2 and the heat sink front end face 3 of transition heat sink are completely coincident, suction nozzle declines automatically after determining position, will
Semiconductor laser array 2 is depressed on aluminium nitride 3, and manually opened heater waits completion to be welded.
The above description is only an embodiment of the present invention, and the scope of the patents of the invention is not limited with this, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant systems
Domain is commanded, is included within the scope of the present invention.
Claims (9)
1. a kind of semiconductor laser array encapsulating structure of high efficiency and heat radiation, it is characterised in that:
Heat sink including basis, the heat sink upper setting auxiliary in basis is heat sink, the heat sink upper setting transition heat sink of auxiliary, the mistake
Cross heat sink upper setting semiconductor laser array (2).
2. the semiconductor laser array encapsulating structure of high efficiency and heat radiation according to claim 1, it is characterised in that: described auxiliary
It helps heat sink for graphite-copper composite heat sink (1).
3. the semiconductor laser array encapsulating structure of high efficiency and heat radiation according to claim 2, it is characterised in that: the stone
Ink-copper composite heat sink (1) includes upper layer, middle layer and lower layer, and the middle layer is graphite flake (6), and the upper and lower are copper, institute
Graphite flake (6) are stated equipped with through-hole (5), the quantity of through-hole (5) be it is multiple, be equipped with copper post in through-hole (5), copper post respectively with it is upper
Layer, lower layer's connection.
4. the semiconductor laser array encapsulating structure of high efficiency and heat radiation according to any one of claims 1 to 3, feature exist
In: it is that copper is heat sink (4) that the basis is heat sink；The transition heat sink is aluminium nitride heat sink (3).
5. the semiconductor laser array encapsulating structure of high efficiency and heat radiation according to claim 4, it is characterised in that: the base
Plinth is heat sink and auxiliary it is heat sink between welded by golden tin solder；The auxiliary is heat sink to pass through golden tin solder welding between transition heat sink.
6. the semiconductor laser array encapsulating structure of high efficiency and heat radiation according to claim 5, it is characterised in that: the base
Plinth is heat sink, auxiliary is heat sink, and rear surface is placed in cooling surface；The lower surface that the basis is heat sink is placed in cooling surface.
7. a kind of production method of the semiconductor laser array encapsulating structure of high efficiency and heat radiation, which is characterized in that including following step
It is rapid:
1) graphite-copper composite heat sink is made
1.1) graphite flake (6) are provided；
1.2) through-hole (5) are processed on graphite flake (6)；
1.3) become graphite-copper composite heat sink (1) after carrying out metalized to graphite flake (6) using electrochemical method；
2) it is heat sink (4) to provide copper, graphite-copper composite heat sink (1) is welded on copper heat sink (4)；
3) aluminium nitride heat sink (3) are provided, aluminium nitride heat sink (3) is welded on graphite-copper composite heat sink (1)；
4) semiconductor laser array (2) are provided, semiconductor laser array (2) is welded on aluminium nitride heat sink (3).
8. a kind of production method of the semiconductor laser array encapsulating structure of high efficiency and heat radiation according to claim 7,
It is characterized in that:
In the step 1.2), radius is used to process through-hole (5) on graphite flake (6) for the drill bit of 0.2mm or laser drill.
9. a kind of production method of the semiconductor laser array encapsulating structure of high efficiency and heat radiation according to claim 7 or 8,
It is characterized by:
In the step 1.3), metalized is carried out to graphite flake (6) using electrochemical method specifically: firstly, using ethyl alcohol
It cleans graphite flake (6), is basic plating solution with sulfuric acid solution, using phosphorous copper sheet as anode, graphite flake (6) is cathode, close in electric current
Degree is 2A dm-2Under conditions of, Cu is plated in the two sides and micropore inside of graphite flake (6), the sulfuric acid solution is 0.32M
CuSO4*5H2O、0.30M H2SO4Manufactured mixed liquor.
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| CN201910201556.XA CN109787084B (en) | 2019-03-18 | 2019-03-18 | Semiconductor laser array packaging structure with efficient heat dissipation and manufacturing method |
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| CN201910201556.XA CN109787084B (en) | 2019-03-18 | 2019-03-18 | Semiconductor laser array packaging structure with efficient heat dissipation and manufacturing method |
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| CN109787084B CN109787084B (en) | 2020-07-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114300931A (en) * | 2021-12-06 | 2022-04-08 | 武汉锐科光纤激光技术股份有限公司 | Heat radiator for laser chip |
| CN114361933A (en) * | 2021-12-08 | 2022-04-15 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Semiconductor laser heat radiation structure and packaging structure with same |
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| US20170292027A1 (en) * | 2016-04-07 | 2017-10-12 | Wha Yueb Technology Co., Ltd. | Thermal balancing coating and a manufacturing method thereof |
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| CN114300931A (en) * | 2021-12-06 | 2022-04-08 | 武汉锐科光纤激光技术股份有限公司 | Heat radiator for laser chip |
| CN114361933A (en) * | 2021-12-08 | 2022-04-15 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Semiconductor laser heat radiation structure and packaging structure with same |
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