CN109787084B - Semiconductor laser array packaging structure with efficient heat dissipation and manufacturing method - Google Patents
Semiconductor laser array packaging structure with efficient heat dissipation and manufacturing method Download PDFInfo
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- CN109787084B CN109787084B CN201910201556.XA CN201910201556A CN109787084B CN 109787084 B CN109787084 B CN 109787084B CN 201910201556 A CN201910201556 A CN 201910201556A CN 109787084 B CN109787084 B CN 109787084B
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Abstract
The invention belongs to the technical field of lasers, and particularly relates to a semiconductor laser array packaging structure capable of efficiently dissipating heat and a manufacturing method thereof. The utility model provides a high-efficient radiating semiconductor laser array packaging structure, includes basic heat sink, set up supplementary heat sink on the basic heat sink, set up the transition heat sink on the supplementary heat sink, set up the semiconductor laser array on the transition heat sink. The invention solves the problem of poor heat conduction of the existing high-power semiconductor laser array package, improves the heat dissipation performance and the photoelectric conversion efficiency of the semiconductor laser array, and prolongs the service life of the laser.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a semiconductor laser array packaging structure capable of efficiently dissipating heat and a manufacturing method thereof.
Background
Semiconductor lasers, also known as laser diodes (L ase Diode), are lasers which use direct band gap III-V group, IV-VI group, II-VI group compounds and their solid solution materials as working substances, and since the early birth of the sixty years of the last century, they have gradually developed into one of the most important core devices in the field of modern optoelectronic devices with the advantages that the conventional lasers have small volume, light weight, high photoelectric conversion efficiency, long service life, high reliability and the like, which cannot be compared with the conventional lasers.
The semiconductor laser array is also called a laser diode bar, and is called a bar for short. Several unit to nearly thousand unit laser diodes are grown on the same substrate by Metal Organic Chemical Vapor Deposition (MOCVD) according to power requirements to form a one-dimensional array. The linear array containing dozens of units is a phase-locked array, the practical output is only a few watts, and as the number of the units contained in the array is increased to the extent that the width of an active region reaches or exceeds the cavity length, the required normal lasing can be influenced by transverse lasing and Amplified Spontaneous Emission (ASE), thereby limiting the increase of the output power. If the multi-element array is divided into groups, each group takes 19 units as a unit, the groups are separated by using an optical isolation technology, and the light emitted by the groups is irrelevant to each other to form multi-aperture lasing, the output power can be improved by increasing the integration number.
With the development of semiconductor laser technology, the requirements of people on the output power of the semiconductor laser are gradually increased, so that the junction temperature of a semiconductor laser chip is increased, and particularly, the high-power semiconductor laser array is formed. With the increase of junction temperature, the wavelength of the semiconductor laser array is widened, the threshold current is increased, the photoelectric conversion efficiency is reduced, the service life is shortened, and the reliability is reduced. Semiconductor laser packaging technology has become very important.
In recent years, graphite has attracted great attention because of its good electrical and thermal conductivity in the laminar direction, and its single crystal plane thermal conductivity can be as high as 2200W/MK. In addition, the graphite also has the advantages of good mechanical property, low density, small thermal expansion coefficient and the like. Therefore, graphite is considered to be a new high thermal conductive material with great development potential.
The temperature of the high-power semiconductor laser is continuously increased in the working process, the requirements on the traditional packaging structure and heat sink materials are higher and higher, and a novel high-thermal-conductivity material is urgently needed to improve the thermal conductivity of the packaging structure of the semiconductor laser. Therefore, in a semiconductor laser package, how to more efficiently lower the operating temperature of the semiconductor laser is an important issue.
Disclosure of Invention
In order to solve the problems in the background art, the invention provides a semiconductor laser array packaging structure with high heat dissipation efficiency, which solves the problem of poor heat conduction of the existing high-power semiconductor laser array packaging, improves the heat dissipation performance and the photoelectric conversion efficiency of a semiconductor laser array, and prolongs the service life of a laser.
The technical scheme for solving the problems is as follows: a semiconductor laser array packaging structure with high-efficiency heat dissipation is characterized in that:
the semiconductor laser device comprises a basic heat sink, wherein an auxiliary heat sink is arranged on the basic heat sink, a transitional heat sink is arranged on the auxiliary heat sink, and a semiconductor laser array is arranged on the transitional heat sink.
Further, the auxiliary heat sink is a graphite-copper composite heat sink.
Further, the basic heat sink is a copper heat sink; the transitional heat sink is an aluminum nitride heat sink.
Furthermore, the graphite-copper composite heat sink comprises an upper layer, an intermediate layer and a lower layer, wherein the intermediate layer is a graphite sheet, the upper layer and the lower layer are copper, the graphite sheet is provided with a plurality of through holes, copper columns are arranged in the through holes and are respectively connected with the upper layer and the lower layer.
Furthermore, the basic heat sink and the auxiliary heat sink are welded through gold-tin solder; and the auxiliary heat sink and the transitional heat sink are welded by gold-tin solder.
Furthermore, the rear surfaces of the basic heat sink and the auxiliary heat sink are arranged on a cooling surface; the lower surface of the basic heat sink is arranged on the cooling surface.
In addition, the invention also provides a manufacturing method of the semiconductor laser array packaging structure with high-efficiency heat dissipation, which is characterized by comprising the following steps:
1) manufacture of graphite-copper composite heat sink
1.1) providing a graphite sheet;
1.2) processing through holes on the graphite sheet;
1.3) adopting an electrochemical method to carry out metallization treatment on the graphite flake to form a graphite-copper composite heat sink;
2) providing a copper heat sink, and welding the graphite-copper composite heat sink on the copper heat sink;
3) providing an aluminum nitride heat sink, and welding the aluminum nitride heat sink on the graphite-copper composite heat sink;
4) and providing a semiconductor laser array, and welding the semiconductor laser array on the aluminum nitride heat sink.
Further, in the step 1.2), a drill with a radius of 0.2mm or a laser is used for drilling a through hole on the graphite sheet.
Further, in the step 1.3), the step of performing metallization treatment on the graphite sheet by using an electrochemical method specifically comprises: firstly, cleaning graphite flakes with ethanol, plating solution based on sulfuric acid solution, phosphorus-containing copper plate as anode and graphite flakes as cathode, and performing a plating process at a current density of 2A dm-2Plating Cu on both sides and in the interior of micropores of a graphite sheet, wherein the sulfuric acid solution is 0.32MCuSO4*5H2O、0.30M H2SO4And (3) preparing a mixed solution.
The invention has the advantages that:
according to the invention, the graphite-copper composite material is arranged between the copper heat sink and the aluminum nitride heat sink, the copper columns are filled in the through holes of the metallized graphite flake, and the heat generated by the semiconductor laser array can be conducted to the interior of the graphite flake through the copper columns, so that the defect of low longitudinal thermal conductivity of the graphite flake is overcome; the high transverse heat conductivity of the graphite flake is utilized, the heat dissipation capacity of the packaging structure is improved, and the photoelectric conversion efficiency and the service life of the semiconductor laser array are improved.
Drawings
Fig. 1 is a schematic diagram of a semiconductor laser array package structure with high heat dissipation efficiency according to the present invention;
FIG. 2 is a schematic representation of a graphite sheet of the present invention;
fig. 3 is a flowchart of a method for manufacturing a semiconductor laser array package structure with high heat dissipation efficiency according to the present invention.
In the figure: 1-graphite-copper composite heat sink; 2-semiconductor laser array, 3-aluminum nitride heat sink, 4-copper heat sink, and 5-through hole; 6-graphite flake.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1, a semiconductor laser array package structure with high heat dissipation efficiency includes a basic heat sink, an auxiliary heat sink is disposed on the basic heat sink, a transition heat sink is disposed on the auxiliary heat sink, and a semiconductor laser array 2 is disposed on the transition heat sink. The basic heat sink and the auxiliary heat sink are welded through gold-tin solder; and the auxiliary heat sink and the transitional heat sink are welded by gold-tin solder.
The auxiliary heat sink is a graphite-copper composite heat sink 1; the basic heat sink is a copper heat sink 4; the transitional heat sink is an aluminum nitride heat sink 3.
The graphite-copper composite heat sink 1 comprises an upper layer, an intermediate layer and a lower layer, wherein the intermediate layer is a graphite sheet 6, the upper layer and the lower layer are copper, the graphite sheet 6 is provided with a plurality of through holes 5, copper columns are arranged in the through holes 5 and are respectively connected with the upper layer and the lower layer.
In the specific embodiment, the copper heat sink 4, the graphite-copper composite heat sink 1, the aluminum nitride heat sink 3 and the front surface of the semiconductor laser array 2 are all on the same plane. In a specific embodiment, the rear surfaces of the copper heat sink 4 and the graphite-copper composite heat sink 1 are both in contact with a cooling surface, which may be a constant temperature solid conduction cooling surface or a liquid flow cooling surface.
In a specific embodiment, the lower surface of the copper heat sink 4 is in contact with a cooling surface, which may be a constant temperature solid conduction cooling surface, a liquid flow cooling surface.
As an alternative embodiment, the size of the lower surface of the graphite-copper composite heat sink 1 is not larger than the size of the upper surface of the copper heat sink 4.
In a specific embodiment, the lower surface of the graphite-copper composite heat sink 1 has the same size as the upper surface of the copper heat sink 4.
As an alternative embodiment, the aluminum nitride heat sink 3 is located on the upper surface of the graphite-copper composite heat sink 1. In a specific embodiment, the aluminum nitride heat sink 3 is arranged in the middle of the upper surface of the graphite-copper composite heat sink 1, and the front surfaces of the two are on the same plane.
As an alternative embodiment, the through hole 5 is positioned in the projection plane of the aluminum nitride heat sink 3. In a specific embodiment, the through holes 5 are positioned in the projection plane of each light emitting unit of the semiconductor laser array 2.
According to the semiconductor laser array packaging structure provided by the embodiment of the invention, the graphite-copper composite heat sink 1 is arranged between the copper heat sink 4 and the aluminum nitride heat sink 3, and the lower surface and the rear surface of the packaging structure are in contact with the cooling surface. By adopting the semiconductor laser array packaging structure, the heat dissipation capability of the packaging structure, the photoelectric conversion efficiency of the semiconductor laser array and the service life can be improved.
Referring to fig. 3, a method for manufacturing a semiconductor laser array package structure with high heat dissipation efficiency includes the following steps:
1) manufacture of graphite-copper composite heat sink
1.1) providing graphite flakes 6.
1.2) with reference to fig. 2, through-holes 5 are machined in a graphite sheet 6; the distance between the through holes is the same as the distance between the light emitting units of the semiconductor laser array 2; specifically, the through-holes 5 are processed in the graphite sheet 6 by using a drill having a radius of 0.2mm or laser drilling.
1.3) adopting an electrochemical method to carry out metallization treatment on the graphite sheet 6 to form the graphite-copper composite heat sink 1. Specifically, the metallization treatment of the graphite sheet 6 by the electrochemical method specifically comprises: firstly, the graphite flake 6 is cleaned by ethanol, the plating solution is based on sulfuric acid solution, the phosphor-containing copper plate is used as the anode, the graphite flake 6 is used as the cathode, and the current density is 2A dm-2Plating Cu on both sides and inside of micropores of a graphite sheet 6, the sulfuric acid solution being 0.32M CuSO4*5H2O、0.30M H2SO4And (3) preparing a mixed solution.
2) Providing a copper heat sink 4, and welding the graphite-copper composite heat sink 1 on the copper heat sink 4. Specifically, the copper heat sink 4 is cleaned, and then the upper surface of the copper heat sink 4 and the lower surface of the graphite-copper composite heat sink 1 are soldered by using gold-tin solder.
3) Providing an aluminum nitride heat sink 3, and welding the aluminum nitride heat sink 3 on the graphite-copper composite heat sink 1. Specifically, the lower surface of the aluminum nitride heat sink 3 and the upper surface of the graphite-copper composite heat sink 1 are soldered by gold-tin solder.
4) Providing a semiconductor laser array 2, and welding the semiconductor laser array 2 on an aluminum nitride heat sink 3. Specifically, the semiconductor laser array 2 is placed on a working platform, and the semiconductor laser array is absorbed by a chip mounter with the P surface facing downward. The semiconductor laser array 2 and the front end face 3 of the transition heat sink are completely overlapped, the suction nozzle automatically descends after the position is determined, the semiconductor laser array 2 is pressed onto the aluminum nitride 3, the heater is manually started, and the welding is waited to be completed.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures or equivalent flow transformations made by the present specification and drawings, or applied directly or indirectly to other related systems, are included in the scope of the present invention.
Claims (6)
1. The utility model provides a high-efficient radiating semiconductor laser array packaging structure which characterized in that:
the semiconductor laser device comprises a basic heat sink, wherein an auxiliary heat sink is arranged on the basic heat sink, a transitional heat sink is arranged on the auxiliary heat sink, and a semiconductor laser array (2) is arranged on the transitional heat sink;
the auxiliary heat sink is a graphite-copper composite heat sink (1);
the graphite-copper composite heat sink (1) comprises an upper layer, an intermediate layer and a lower layer, wherein the intermediate layer is a graphite sheet (6), the upper layer and the lower layer are copper, through holes (5) are formed in the graphite sheet (6), the number of the through holes (5) is multiple, copper columns are arranged in the through holes (5), and the copper columns are respectively connected with the upper layer and the lower layer;
the basic heat sink is a copper heat sink (4); the transitional heat sink is an aluminum nitride heat sink (3).
2. A high efficiency heat sinking semiconductor laser array package structure as claimed in claim 1 wherein: the basic heat sink and the auxiliary heat sink are welded through gold-tin solder; and the auxiliary heat sink and the transitional heat sink are welded by gold-tin solder.
3. A high efficiency heat sinking semiconductor laser array package structure as claimed in claim 2, wherein: the rear surfaces of the basic heat sink and the auxiliary heat sink are arranged on a cooling surface; the lower surface of the basic heat sink is arranged on the cooling surface.
4. A manufacturing method of a semiconductor laser array packaging structure with efficient heat dissipation is characterized by comprising the following steps:
1) manufacture of graphite-copper composite heat sink
1.1) providing a graphite sheet (6);
1.2) processing through holes (5) on a graphite sheet (6);
1.3) adopting an electrochemical method to carry out metallization treatment on the graphite sheet (6) to form the graphite-copper composite heat sink (1);
2) providing a copper heat sink (4), and welding the graphite-copper composite heat sink (1) on the copper heat sink (4);
3) providing an aluminum nitride heat sink (3), and welding the aluminum nitride heat sink (3) on the graphite-copper composite heat sink (1);
4) providing a semiconductor laser array (2), and welding the semiconductor laser array (2) on an aluminum nitride heat sink (3).
5. The method for fabricating a high efficiency heat dissipating semiconductor laser array package as claimed in claim 4, wherein:
in the step 1.2), a drill bit with the radius of 0.2mm or laser drilling is adopted to process the through hole (5) on the graphite sheet (6).
6. A method for fabricating a high-efficiency heat-dissipating semiconductor laser array package structure according to claim 4 or 5, wherein:
in the step 1.3), the step of performing metallization treatment on the graphite sheet (6) by using an electrochemical method specifically comprises the following steps: firstly, the graphite flake (6) is cleaned by ethanol, the plating solution is based on sulfuric acid solution, the phosphorus-containing copper plate is used as the anode, the graphite flake (6) is used as the cathode, and the current density is 2A dm-2Plating Cu on both sides and inside the micropores of a graphite sheet (6), the sulfuric acid solution being 0.32MCuSO4*5H2O、0.30M H2SO4And (3) preparing a mixed solution.
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| CN114300931A (en) * | 2021-12-06 | 2022-04-08 | 武汉锐科光纤激光技术股份有限公司 | Heat radiator for laser chip |
| CN114361933A (en) * | 2021-12-08 | 2022-04-15 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Semiconductor laser heat radiation structure and packaging structure with same |
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| CN109244825B (en) * | 2018-09-26 | 2020-04-17 | 华南师范大学 | Edge-emitting semiconductor laser with heat dissipation structure and preparation method thereof |
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