Background technology
Luminescent device based on semiconductor material with wide forbidden band is the emphasis of Semiconductor Optic Electronics field and field of electronic devices research and development always.To be that the semiconductor illuminating light source of representative has advantages such as environmental protection, energy-conservation, good weatherability and life-span be long based on the high-power blue-ray LED of III-V group nitride material, will cause a revolution in lighting source market, finally may replace the traditional lighting light source.Simultaneously, based on the short wavelength laser diode (LD) of GaN material because it in the advantage aspect the optical storage, had caused the revolution of optical storage mode already.But with regard to present circumstances, the high great power LED of GaN base LD cost still is difficult to extensively replace traditional lighting in domestic lighting market.Studies show that, comprise the solution that all multifactor impacts such as heat dissipation problem of device under the big injection current the problems referred to above.Particularly for LED, it is very outstanding that the factor of aspects such as luminous efficiency seems.
Because mixing, the p type of III group-III nitride is subject to the solubility that Mg led and the higher activation energy in hole, therefore, for making LED and LD, be difficult to obtain the p type GaN layer of high hole concentration, under big injection current condition, heat is especially easily in p type region generating.This heat certainly will could dissipate on heat sink by total.However, because GaN base luminescent device and electronic device temperature generally are lower than 200 ℃, a little less than the thermal radiation very, so can not rely on thermal radiation to dispel the heat, this just means that the heat radiation approach of GaN base luminescent device mainly is heat conduction and thermal convection.As everyone knows, the III group-III nitride has two basic properties (the document H.Mokoc.Nitride semiconductors and devices.Berlin:Springer that sees reference, 1999): the first, and fusing point is high.The fusing point of AlN is more than the 3000K, and the fusing point of GaN is more than the 2000K, and the fusing point of InN is also more than 1200K; The second, the equilibrium pressure of nitrogen is very high.More than two character determined to be difficult to obtain high-quality, large tracts of land body monocrystalline nitride, so the III group-III nitride can only obtain by heterogeneous epitaxial technology.Up to the present, with sapphire (Sapphire) be growth technology the most ripe (the document S.Nakamura that sees reference, the S.Pearton of substrate, and G.Fasol, The Blue Laser Diode:The Complete Story, Berlin, Springer, 2000).
Sapphire has the advantages such as the easily property obtained of the low and large tracts of land material of price, but it has the disadvantage of two aspects: the first, and extremely low thermal conductivity; The second, lattice constant and thermal coefficient of expansion and GaN material do not match.The former causes the thermal resistance (thermal resistance is defined as the temperature difference of device and surrounding environment and the ratio of corresponding burn-off power) of device to increase, produce serious self-heating effect, therefore the temperature of chip itself is very high under big injection current, not only make the device performance degradation that comprises LED and LD luminous efficiency etc., and make the component failure rate be the index law increase.The latter causes in the GaN epitaxial loayer extra high defect concentration on the one hand, and (dislocation density is generally 10
10More than the cm-2), cause existing among the GaN strong twin shaft compression on the other hand, particularly the difference owing to thermal coefficient of expansion can be introduced extra thermal stress (T.Kozawa in GaN when the variations in temperature of chip itself, T.Kachi, H.Kano, H.Nagase, N.Koide, and K.Manabe, Thermal Stress in GaN EpitaxyLayers Grown on Sapphire Substrates, J.Appl.Phys.1995 77 (9): 4389-4392).Therefore, both all produce destructive influence to the Performance And Reliability of device.
For reducing the thermal resistance of chip under the big injection current, thereby reduce the temperature of chip itself, usually the method that adopts is to utilize face-down bonding technique that the heat sink material of GaN base epitaxial wafer and high heat conductance is welded, reduce the temperature (D.A.Steigerwald of chip itself by the efficient heat conduction of high thermal conductivity material, J.C.Bhat, D.Collins, R.M.Fletcher, M.O.Holcomb, et al, Illumination With Solid State Lighting Technology, IEEE J.Sel.Top.Quant.Electron.2002 8 (2): 310-320).Secondly, it also is the very effective method that reduces the device thermal resistance that Sapphire Substrate and GaN epitaxial loayer are peeled away, the normal technology laser lift-off technique (Laser Lift-off) that adopts: the UV laser beam irradiation GaN and the sapphire interface that utilize high power density, thereby realize GaN and the sapphire (T.Fujii that separates, Y.Gao, R.Sharma, E.L.Hu, S.P.Denbaars, and S.Nakamura, Increase in the ExtractionEfficiency of GaN-based Light-emitting Diodes Via Surface Roughning.Appl.Phys.Lett., 2,004 84 (6): 855-857).
Yet above-mentioned two kinds of methods need expensive equipment on the one hand, have therefore increased the cost of element manufacturing; Increased technical difficulty on the other hand, very unfavorable to the rate of finished products that improves element manufacturing.The present invention proposes novel GaN base luminescent device structure, not only reduced thermal resistance but also improved the every performance index of device of luminous efficiency of comprising LED etc.
Summary of the invention
The present invention is the high thermal resistance problem of the GaN base luminescent device that causes for the utmost point lower thermal conductivity that solves owing to Sapphire Substrate, and improve the every performance index of device comprise LED luminous efficiency etc. and finish, its objective is the manufacturing technology that novel GaN base luminescent device is provided.
Manufacture method of the present invention comprises material epitaxy, etching and preparation contact electrode, it is characterized in that:
By utilizing figure that dry etching or wet etching go out to need substrate etching forming slotted eye, and fill and go up reflectivity height, thermal conductivity far, and improve its luminous efficiency greater than the material of substrate thermal conductivity thermal resistance with effective reduction GaN base luminescent device.
By utilizing dry etching or wet etching substrate etching to be gone out the figure of needs to form slotted eye, then resilient coating corresponding with described slotted eye or resilient coating and the epitaxial loayer that closes on that is positioned on the resilient coating are etched away, fill to go up reflectivity height, thermal conductivity far at last greater than the material of substrate thermal conductivity thermal resistance, and improve its luminous efficiency with effective reduction GaN base luminescent device.
Described slotted eye is distributed in arbitrary position of described substrate, be periodic arrangement or random arrangement, its degree of depth is less than or equal to thickness, the buffer layer thickness of described substrate and is positioned at three sums of an epitaxy layer thickness of closing on the resilient coating, and the degree of depth of each slotted eye is arbitrarily.
Described slotted eye figure in the plane along the size of either direction between 0.1 micron-100,000 microns.
Described slotted eye be shaped as arbitrary shape.
What extension obtained on the tangible Sapphire Substrate of material of making GaN base luminescent device commonly used at present.In the present invention, by adopting means such as wet method or dry etching some zone of Sapphire Substrate or part epitaxial loayer is got rid of to form slotted eye, be filled into the material of thermal conductivity afterwards greater than the sapphire thermal conductivity in these zones, on Sapphire Substrate, form the approach that dispels the heat efficiently, reduce the thermal resistance of device, improved every performance index of device; On the other hand, if adopt the packing material of high reflectance,, can improve the light extraction efficiency of LED device hugely because the distance between GaN material and the reflecting material shortens.The manufacturing technology compatibility of this technology and present GaN base luminescent device does not need complex apparatus and increase complicated manufacture craft, so cost of manufacture has obtained reduction.Experimental result shows, uses the new structure that proposes of the present invention, and it is low to obtain cost of manufacture, and the device thermal resistance is little, the GaN base luminescent device that performance is better.
Embodiment
The present invention realizes according to following technical scheme:
The present invention proves that under big injection current condition, because the thermal conductivity of Sapphire Substrate is extremely low, GaN based light-emitting diode and laser diode junction temperature rise very fast, and causing at short notice, luminous efficiency descends even lost efficacy.
At present, the normal GaN based light-emitting diode epitaxial structure that adopts as shown in Figure 1.Wherein, 1 is sapphire, and as the substrate of epitaxial growth GaN material, 2 is the resilient coating that forms between first contact electrode layer 3 and sapphire 1, and 3 is the first contact electrode layer material, above epitaxial growth In successively
xGa
yAl
1-x-yN/In
uGa
vAl
1-u-vThe GaN Multiple Quantum Well active area 4 and the second contact electrode layer material 5, resilient coating 2, first contact electrode layer 3, active area 4, second contact electrode layer 5 can be generally called epitaxial loayer, and its gross thickness is about 4500nm.In the process of making LED, adopt etching technics that second contact electrode layer 5 and the active area 4 of part epitaxial material are etched away usually earlier, to expose first contact electrode layer 3, the degree of depth of this technology etching very shallow (about 500nm).On first contact electrode layer and second contact electrode layer, make first contact electrode 6 and second contact electrode 7 then respectively, finish the manufacture craft of tube core.Because the thermal conductivity of Sapphire Substrate itself is lower, cause when device is worked under big injection current condition, the temperature of chip rises very big.Add the bigger thermal strain of introducing in epitaxial loayer, severe exacerbation the characteristic of GaN sill, thereby influenced the luminous efficiency and the thermal stability of device.
The present invention further proves, if some zone in Sapphire Substrate 1, resilient coating 2, first contact electrode layer 3 makes slotted eye, and fill therein thermal conductivity greater than the material 8 of sapphire thermal conductivity as aluminium (Al), as the material among Fig. 18, then can eliminate the drawback of Sapphire Substrate 1 lower thermal conductivity, effectively reduce the device thermal resistance, thereby can improve every performance index of device greatly.Particularly,, can improve the light extraction efficiency of LED device hugely because the distance between GaN material and the reflecting material shortens for LED.On the other hand, because this manufacturing technology and present manufacture craft compatibility do not need expensive equipment, so cost of manufacture can remain on lower level.
The method disclosed in the present is applicable to that all are based on the GaN luminescent device on Sapphire Substrate and other lower thermal conductivity substrate substrates and the manufacturing technology of electronic device.
The present invention will be further described below by embodiment
Embodiment 1
Novel light-emitting diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 1: 1 is the Sapphire Substrate electrode, 2 is resilient coating, 3 is first contact electrode layer, 4 is active area, 5 is second contact electrode layer, 6 and 7 are respectively first and second contact electrodes, and 8 is the Al material of filling in sapphire.
By utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure, and fill to go up with the 8 reflectivity height of representing, thermal conductivity far metal material Al greater than the sapphire thermal conductivity, thereby effectively reduce the thermal resistance of GaN base LED, acquisition under big electric current injects, luminous even, reliable and stable GaN based light-emitting diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
Embodiment 2
New light-emitting diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 2: 1 is the Sapphire Substrate electrode, 2 is resilient coating, 3 is first contact electrode layer, 4 is active area, 5 is second contact electrode layer, 6 and 7 are respectively first and second contact electrodes, and 8 is the Al material of filling in sapphire.
At first, partial buffer layer 2 is etched away until exposing first contact electrode layer 3 then by utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure.After having made first contact electrode 6, reflectivity height, the thermal conductivity far metal material Al8 greater than the sapphire thermal conductivity will fill be gone up in the Sapphire Substrate, thereby effectively reduce the thermal resistance of GaN base LED, obtain under big electric current injects luminous even, reliable and stable GaN based light-emitting diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
Embodiment 3
New light-emitting diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 3: 1 is the Sapphire Substrate electrode, 2 is resilient coating, 3 is first contact electrode layer, 4 is active area, 5 is second contact electrode layer, 6 and 7 are respectively first and second contact electrodes, and 8 is the Al material of filling in sapphire.
At first, then the partial buffer layer 2 and first contact electrode layer 3 are eroded the corrosion depth difference of each slotted eye by utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure.After having made first contact electrode 6, reflectivity height, the thermal conductivity far metal material Al8 greater than the sapphire thermal conductivity will fill be gone up in the Sapphire Substrate, thereby effectively reduce the thermal resistance of GaN base LED, obtain under big electric current injects luminous even, reliable and stable GaN based light-emitting diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
Embodiment 4
New pattern laser diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 4: 1 is saphire substrate material, 2 is resilient coating, 3 is first contact electrode layer, 9 is first ducting layer, 4 is active area, and 10 is second ducting layer, and 5 is second contact electrode layer, 6 and 7 are respectively first and second contact electrodes, and 8 is the Al Heat Conduction Material of filling in sapphire.
By utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure, and fill and go up with the metal material Al of 8 thermal conductivity far of representing greater than the sapphire thermal conductivity, thereby effectively reduce the thermal resistance of GaN base LED, acquisition under big electric current injects, luminous even, reliable and stable GaN based laser diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
Embodiment 5
New pattern laser diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 5: 1 is saphire substrate material, 2 is resilient coating, 3 is first contact electrode layer, 9 is first ducting layer, 4 is active area, and 10 is second ducting layer, and 5 is second contact electrode layer, 6 and 7 are respectively first and second electrodes contacts, and 8 is the Al Heat Conduction Material of filling in sapphire.
By utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure, partial buffer layer 2 is etched away until exposing first contact electrode layer 3 then.After having made first contact electrode 6, go up with the metal material Al of 8 thermal conductivity far of representing filling in the Sapphire Substrate greater than the sapphire thermal conductivity, thereby effectively reduce the thermal resistance of GaN base LED, obtain under big electric current injects luminous even, reliable and stable GaN based laser diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
Embodiment 6
New pattern laser diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 6: 1 is saphire substrate material, 2 is resilient coating, 3 is first contact electrode layer, 9 is first ducting layer, 4 is active area, and 10 is second ducting layer, and 5 is second contact electrode layer, 6 and 7 are respectively first and second electrodes contacts, and 8 is the Al Heat Conduction Material of filling in sapphire.
By utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure, then partial buffer layer 2 and part first contact electrode layer 3 are etched away, the corrosion depth of each slotted eye is different.After having made first contact electrode 6, go up with the metal material Al of 8 thermal conductivity far of representing filling in the Sapphire Substrate greater than the sapphire thermal conductivity, thereby effectively reduce the thermal resistance of GaN base LED, obtain under big electric current injects luminous even, reliable and stable GaN based laser diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.