CN1189000A - Semiconductor laser module - Google Patents
Semiconductor laser module Download PDFInfo
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- CN1189000A CN1189000A CN98100321A CN98100321A CN1189000A CN 1189000 A CN1189000 A CN 1189000A CN 98100321 A CN98100321 A CN 98100321A CN 98100321 A CN98100321 A CN 98100321A CN 1189000 A CN1189000 A CN 1189000A
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- metalwork
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- laser component
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Abstract
In a semiconductor laser module including a laser diode chip, a metal substrate for mounting the laser diode chip thereon ,and a Peltier element having a panel coupled by metal solder to the metal substrate. The metal substrate is formed by a first metal member having a larger thermal conductivity than about 290 W/m.deg and a second metal member having a thermal expansion coefficient close to that of the panel.
Description
The present invention relates to a kind of semiconductor laser component that adopts Peltier element to make cooling system, especially relate to and wherein improved metallic substrates fixing Peltier element.
Semiconductor laser component just is being widely used in the optical-fibre communications usefulness as the excitation source of the signal optical source of closed-circuit television (CATV) system and fiber amplifier.This semiconductor laser component generally all comprises a Peltier element and realizes that as electronic cooler high-power output makes assembly be able to stable operation, metallic substrates wherein is mounted in the top of Peltier element, and again with optical element such as laser diode chip, luminous diode chip and/or eyeglass etc. and electronic component are arranged on the metallic substrates as thermistor, inductance or resistance etc.
The whole layout of semiconductor laser component can make whole metallic substrates obtain fine cooling to keep the temperature-resistant of laser diode chip.This is to make temperature detection because thermistor is abutted against the laser diode chip next door, and gives Peltier element to drive the result of this element work its detected Temperature Feedback.
Semiconductor laser component adopts Peltier element to make cooler and has been disclosed on JP-A-62-117382 and the JP-A-62-276892.
In the semiconductor laser component of prior art, metallic substrates is made with the monometallic with very big conductive coefficient, and on the other hand, potsherd then has the ceramic material of very little thermal coefficient of expansion and makes, in the case, in order to strengthen the power output of semiconductor laser component.The used metal material of metallic substrates preferably has very big conductive coefficient, so that improve its thermal radiation efficient, also will be gone through this below.
But in above-mentioned known semiconductor laser module, the difference of the thermal coefficient of expansion between metallic substrates and the potsherd is very big, so promptly produce very big thermal stress between metallic substrates and the potsherd.So Peltier element can be destroyed under the condition of temperature shock.
The purpose of this invention is to provide a kind of semiconductor laser component that contains the Peltier element of strengthening refrigerating function, when high-power operation, maybe when being in harsh heating condition, can have only very little difference to make it not go to pot between the thermal coefficient of expansion because of wherein Peltier element potsherd and the metallic substrates on it because of its fragility.
Comprise a laser diode chip according to semiconductor laser component of the present invention, one metallic substrates is used for installing a laser diode chip and a Peltier element thereon, weld a metallic substrates with the metal solder flux on the platform sheet of this element, this metallic substrates is to form with second metalwork that its thermal coefficient of expansion approaches pottery greater than first metalwork of 290 watts/Mi Du with its conductive coefficient.
The present invention can with reference to following accompanying drawing compared with the prior art in, through the detailed description of back and be able to definite understanding.
Fig. 1 is the end view of the semiconductor laser component of prior art.
Fig. 2 is along the amplification profile view of II-II line among Fig. 1;
Fig. 3 A and 3B are metallic substrates perspective views among Fig. 1 and Fig. 2;
Fig. 4 A is the metallic character table;
Fig. 4 B is the ceramic characteristics table;
Fig. 5 is the cross section view according to first embodiment of semiconductor laser component of the present invention;
Fig. 6 is the profile of the metallic substrates among Fig. 5;
Fig. 7 is the cross section view of thermoradiation efficiency of the semiconductor laser component of presentation graphs 5;
Fig. 8 is the curve that concerns between the conductive coefficient of the temperature of semiconductor laser component in the presentation graphs 5 and its metallic substrates;
Fig. 9 is the cross section view according to second embodiment of semiconductor laser component of the present invention;
Figure 10 is the perspective view of metallic substrates among Fig. 9.
Before describing most preferred embodiment, at first with reference to the semiconductor laser component of figure 1,2,3A and 3B explanation prior art.
Fig. 1 is the end view of prior art semiconductor laser component, and Fig. 2 is the profile along II-II line among Fig. 1.Laser diode chip 1 and thermistor 2 are to be installed on the assistance platform 4 by one heat sink 3 in Fig. 1 and Fig. 2.Light two utmost point detector tube chips 5 are installed on the bearing 6, and other has an eyeglass 7 to be installed on another bearing 8.Assistance platform 4, chip-carrier 6 and eyeglass bearing 8 all are installed on the metallic substrates 9, and resistance, inductance and circuit board also are housed on the metallic substrates 9.
On the other hand, Peltier element 10 is clipped in the middle of two potsherd 11A and the 11B.Use indium tin (InSn) soft metal cold welding agent that potsherd 11A is combined on the metallic substrates again, to relax the difference of above-mentioned thermal expansion between the two.Potsherd 11B uses metal solder flux (not shown) to be bonded on the thermal radiation clad plate 13 again.
Fig. 3 A is an example of metallic substrates 9 among Fig. 1 and Fig. 2, metallic substrates 9 is to be made by a kind of metal material as Covar (Kovar) or signal bronze, to simplify manufacturing process, the example of in Fig. 3 B, having represented another metallic substrates 9 of Fig. 1 and Fig. 2, metallic substrates 9 is made up of a kind of three-decker, promptly contains 93 composition of copper molybdenum alloy layer of 20% bronze medal with two- layer copper layer 91 and 92 clamping one decks.
Metallic substrates is all made by the metal material of high thermal conductivity coefficient usually, as copper-tungsten (CuW) wherein copper content be generally 10%～30% weight ratio or the copper metal is made (seeing Fig. 4 A).And on the other hand, potsherd 11A (11B) is made by the very little ceramic material of thermal coefficient of expansion, as aluminium oxide (Al
3O
2) or aluminium nitride (AlN) make (seeing Fig. 4 B).
In recent years, because the output of the power of semiconductor laser diode chip increases gradually, this just needs to strengthen the cooling capacity of Peltier element 10, so metallic substrates 9 will be selected the higher metal material of conductive coefficient for use, and for example copper-tungsten (CuW-30) or copper (Cu) (seeing Fig. 4 A).Like this, just enlarged between the potsherd 11A (aluminium oxide) of metallic substrates 9 poor between the thermal coefficient of expansion.So, suffer bigger thermal stress because the minimizing of refrigerating function enhancing back temperature adjustment time (promptly reaching the final temperature required time) causes between metallic substrates 9 and the potsherd 11A.This will produce creep in soft metal solder flux 12.
Yet, if adopted hard cold welding agent, Peltier element 10 (or rather so, should be potsherd 11A and 11B) and metallic substrates 9 between the difference of thermal coefficient of expansion just bigger, the difference of the thermal coefficient of expansion in the thermal environment that variations in temperature (opening and closing experiment as Peltier) fast causes between the material of the material of Peltier element potsherd 11A and 11B and metallic substrates 9 must be than known ceramics sheet 11A and 11B and metallic substrates 9 between the difference of thermal coefficient of expansion of multiple combination of materials much smaller.
In order to make combination between Peltier element 10 (potsherd 11A and 11B) and the metallic substrates 9 can improve reliability under the harsh heating condition to test by thermal environment, just must make the difference of its material coefficient of thermal expansion coefficient very little, and the infrastructure cost of its cooling system can't be too big.
If metallic substrates 9 is mounted on the potsherd of boron nitride (BN) or carborundum (SiC), fine and its thermal coefficient of expansion of the conductive coefficient of these materials is also very near potsherd 11A in the Peltier element 10 and 11B material (Al
2O
3Or AlN) thermal coefficient of expansion, still, the cost of SiC and these materials of BN is too high, is unsuitable for a large amount of productions.
In a word, have the attempt of semiconductor laser component reliability of operation under harsh heating condition of cooler with improvement all be futile and invalid to any reinforcement refrigerating function.
In Fig. 5, shown first embodiment of the present invention, metallic substrates 9 is wherein substituted by metalwork 91 ' and the metallic substrates 9 ' that is trapped among metalwork 91 ' metalwork 92 ' common composition on every side, see Fig. 5 for details, metallic substrates 9 ' is to be combined in Peltier element 10 by hard metal solder flux 12 ', be the top of potsherd 11A, and it is to lay superincumbent perpendicularly with the flow direction of hot-fluid from the laser diode chip to the Peltier element.
Metalwork 91 ' is by the metal material of its conductive coefficient greater than 290 watts/Mi Du, and is made just as CuW-30 or cobalt (Co) (seeing Fig. 4 A).On the other hand, metalwork 92 ' is very little and to approach the metal material of potsherd 11A made by its thermal coefficient of expansion.For example, the thermal coefficient of expansion of metalwork 92 ' is less than 8.5 * 10
-6/ degree, at this moment, metalwork 92 ' can be by tungsten (W), kovar (Kovar), CMC-20, CuW-10, materials such as CuW-15 or CuW-20 are made.(seeing Fig. 4 A).
When the semiconductor laser component of structure puts into operation as mentioned above, the temperature of laser diode chip 1 is to be detected by thermistor 2, and Peltier element 10 promptly is subjected to the control of temperature-control circuit and the function with air-circulation features is provided outside semiconductor laser component, and the temperature maintenance of maintenance laser diode chip 1 is on constant level.When ambient temperature is lower, and when remaining on room temperature usually, laser diode chip 1 can be worked well.
On the other hand, in case the output of the power of laser diode chip 1 is very high, and when a large amount of thermal radiations was arranged, then Peltier element 10 is just inevitable be activated more intensely, and will be the smaller the better to the thermal resistance on the hot release way of thermal radiation clad plate 13 by laser diode chip 1.
Fig. 7 has promptly represented the thermoradiation efficiency of semiconductor laser component shown in Figure 5.The heat that is produced by laser diode chip 1 be by an angle of divergence θ (should be 90 ° in theory) via heat sink 3, assistance platform 4 and metallic substrates 9 ' and disperse out to the top of Peltier element 10.If the area of metalwork 91 ' is received the zone of heating flow greater than it, then assembly just can obtain satisfied cooling effect.Yet, if the assembly expanded by heating gets very big, and the reliability of assembly is wrecked, metalwork 91 ' just must be done enough for a short time to the surface area ratio of metalwork 92 ' so, so that the conductive coefficient that makes the metallic substrates 9 ' in the zone that combines with assistance platform 4 is less than a value given in advance.Do more detailed narration now more at this point, and use R
1And R
2The thermal resistance of representing metalwork 91 ' and metalwork 92 ' respectively.
Notice that metalwork 91 ' and metalwork 92 ' all are configured to hot-fluid perpendicular from the flow direction that laser diode chip 1 is transmitted to Peltier element 10.
Fig. 8 is exactly the temperature of laser diode chip 1 as shown in Figure 5 and the simulative relation curve of conductive coefficient.This curve is the relation curve of the temperature of the heat conduction of the thermal-radiating material that draws of analogue test that the laser diode chip under promoting according to 1 watt of power is done and laser diode chip 1.Need only the employing conductive coefficient just can reduce chip effectively more than or equal to the material of about 290 watts/Mi Du temperature according to this simulation.Therefore, must adopt the higher material of copper-tungsten (CuW-30) (seeing Fig. 4 A) of its thermal conductivity ratio cupric 30% for the metallic substrates 9 ' that assembly is moved be installed to Peltier element to get under favorable cooling effect.
But the material of manufacturing Peltier element 10 potsherd 11A and 11B is Al particularly
2O
3And AlN, be from the table of Fig. 4 B, to elect, because all the material coefficient of thermal expansion coefficient than metallic substrates 9 ' is little for the material coefficient of thermal expansion coefficient in Fig. 4 B table, so the thermal stress that has obvious fluctuation the time to be produced when temperature is just quite big, if adopt hard metal solder flux to do to connect then Peltier element 10 will be impaired and finally destroyed.
Therefore, metallic substrates 9 ' among Fig. 5 and Fig. 6 be by the metalwork 92 ' with less thermal coefficient of expansion be arranged on metalwork 91 ' with big conductive coefficient around, its objective is in order to reduce the thermal expansion of whole metallic substrates 9 ', and improve its conductive coefficient.Adopt this structure, the refrigerating function of Peltier element 10 and reliability just all can be improved.
Narrate example now as the material of metallic substrates 9 '.Metalwork 91 ' can adopt pyroconductivity, and very big (390 watts/Mi Du) copper (Cu), shown in Fig. 4 A, this moment, metalwork 92 ' then can adopt its thermal coefficient of expansion very little by (6.5 * 10
-6/ degree) cupric is 10% copper-tungsten (CuW-10), as Fig. 4 B, these the two kinds of metalworks 91 ' and 92 ' the available soldering or ooze the method for melting and combine and form metallic substrates 9 ', perhaps when metalwork 91 ' be when prepare adopting the copper tungsten (CuW-10) that contains 10% copper, then can be used as a monoblock and form.Metalwork 91 ' is according to its thermal resistance R as metalwork 92 ' (CuW-10) to the area ratio of whole metallic substrates 9 '
2With the function of the permission thermal coefficient of expansion of whole metallic substrates 9 ' and definite.The permission thermal coefficient of expansion of metallic substrates 9 ' is then again according to bonded area, and the hardness and the thickness of thermal environment and hard metal solder flux 12 ' change as function.
Should be noted that, as mentioned above, if the reliability of Peltier element 10 goes wrong, then can reduce metalwork 91 ' to the area of whole metallic substrates 9 ' than and improve that conductive coefficient makes it above 290 watts/Mi Du in metallic substrates 9 ' and the zone that assistance platform 4 combines.
If the thermal resistance R of 10% copper-tungsten (CuW-10) in assistance platform 4 and metallic substrates 9 ' combine the zone
2Be Rcw (degree/watt), the thermal resistance R of copper
1Be Rcc (degree/watt); Then the conductive coefficient of assistance platform 4 and metallic substrates 10 calmodulin binding domain CaMs be λ (watt/Mi Du) and Rcw, Rcc can be expressed from the next respectively:
With
λ cw wherein, Scw, λ cc and Scc and L are defined as:
The conductive coefficient of λ cw-CuW-10 (watt/Mi Du);
Scw-CuW-10 combine with assistance platform 4 place area (square metre);
The conductive coefficient of λ cc-copper (watt/Mi Du);
Scc-copper combine with assistance platform 4 place area (square metre);
The thickness of L-metallic substrates 9 ' (rice).
Then, the area Scc that combines with assistance platform 4 of copper.
Can determine by λ 〉=290.
In above-mentioned example, have conductive coefficient greater than the metalwork 91 ' periphery of 30% copper-tungsten (CuW-30) all surround have thermal coefficient of expansion between kovar (Kovar) and 20% copper-tungsten (CuW-20) thus between the metalwork 92 ' of value constitute metallic substrates 9 ', and then combine with the potsherd 11A of Peltier element 10 and form semiconductor laser component.In this layout, the most heats that generated by laser diode chip 1 all directly are sent on the metallic substrates 9 through being placed on heat sink 3 and assistance platform 4 below it.These heats are transferred to its bottom by the top of Peltier element 10 again and are finally radiate by thermal radiation clad plate 13.
In a word, with a kind of metalwork with little thermal coefficient of expansion be enclosed in another kind have big conductive coefficient metalwork around, the metalwork that a large amount of hot-fluids just can be by having big conductive coefficient is so that the assembly among first embodiment has very reliable conductive coefficient to improve the cooling effect of Peltier element 10 when high temperature.In addition, if temperature is unsteady to some extent, the metalwork that the thermal expansion that then has a metalwork of big conductive coefficient can be had little thermal coefficient of expansion suppresses, and keeping very low thermal expansion, thereby has improved the reliability under the thermal environment of being subjected in the harshness of the fierce change of temperature.
Fig. 9 is the second embodiment of the present invention.Wherein with by metalwork 91 " and metalwork 92 " metallic substrates 9 formed " come the metallic substrates 9 in the alternate figures 2.Metalwork 9 " be to adopt as the 91 ' identical materials of metalwork among Fig. 5.Promptly as shown in figure 10, a lot of metalworks 91 " be at whole metalwork 92 " the zone in make metallic substrates 9 by the arrayed of constant spacing ", metalwork 91 " number and size can be determined with reference to first embodiment by mentioned above principle.
Second embodiment than first embodiment more superior be that the thermal coefficient of expansion that is the entire semiconductor assembly can be even lower than first embodiment, this is because metalwork 91 " be divided into a lot of pieces and do vertically to arrange after, just can make metalwork 91 " and metalwork 92 " be positioned on the direction that parallels with the hot-fluid that emits from laser diode chip 1.
As mentioned above, because of comprised among the present invention a kind of have conductive coefficient metal, so the conductive coefficient of metallic substrates itself is just very big, heat that laser diode chip takes place is radiate effectively strengthened refrigerating function like this.In addition, again because metallic substrates has also comprised a kind of metal with low thermal coefficient of expansion, so the difference of the thermal coefficient of expansion between the potsherd of metallic substrates and Peltier element has just reduced.The stress that Peltier element is brought because of variations in temperature reduces, so just protected the unlikely degradation of Peltier element or impaired, is subjected to reliability level in the thermal environment thereby improved it in the harshness of temperature shock.
Claims (18)
1, a kind of semiconductor laser component is characterized in that, comprising:
One laser diode chip (1);
One metallic substrates (9 ', 9 ") is used for installing said diode chip for backlight unit thereon; With
One Peltier element (10), this element have a platform sheet (11A) that combines with metal solder flux (12 ') and said metallic substrates,
Said metallic substrates comprises first metalwork (91 ", 92 ") of 290 watts of/meter Du Genggao of a kind of its thermal conductivity ratio and second metalwork that a kind of its thermal coefficient of expansion approaches said sheet.
2, a kind of semiconductor laser component as claimed in claim 1 is characterized in that wherein said second metalwork is arranged on the outside of the said first metalwork perisporium.
3, a kind of semiconductor laser component as claimed in claim 1, it is characterized in that wherein said first metalwork be divided into some in accordance with regulations be spaced into arranged in matrix on second metalwork.
4, a kind of as the said semiconductor laser component of claim 1, it is characterized in that wherein said first metalwork and second metalwork are the directions of being arranged to be parallel to hot-fluid that said laser diode chip produces.
5, a kind of as right 1 said semiconductor laser one-level pipe assembly, it is characterized in that wherein said first metalwork is with a kind of the making in copper or 30% copper-tungsten.
6, a kind of semiconductor laser component as claimed in claim 1, it is characterized in that a wherein said sheet with the pottery make.
7, a kind of as the said semiconductor laser component of claim 6, it is characterized in that wherein said pottery is a kind of aluminium oxide or aluminium nitride.
8, a kind ofly it is characterized in that as the said semiconductor laser component of claim 7 thermal coefficient of expansion of wherein said second metalwork is from 4.5 * 10
-6/ spend to 8.5 * 10
-6/ degree.
9, a kind of as the said semiconductor laser component of claim 8, it is characterized in that wherein said second metalwork is a kind of made by in tungsten, Covar, 20% copper molybdenum alloy, 10% copper-tungsten, 15% copper-tungsten and 20% copper-tungsten.
10, a kind of semiconductor laser component is characterized in that, comprising:
A platform sheet (11A) is arranged on one Peltier element (10);
One metallic substrates (9 ', 9 ") combines with metal solder flux (12 ') and said sheet on it;
One assistance platform (4) is fixed on the said metallic substrates;
One heat sink (3) are installed on the said assistance platform;
One laser diode chip (1) be bonded in said heat sink on;
One thermal diode (2) be bonded in said heat sink on;
Said metallic substrates has comprised a kind of its conductive coefficient approaches said sheet greater than first metalwork of 290 watts/Mi Du (91 ', 91 ") and a kind of its thermal coefficient of expansion second metalwork (92 ', 92 ").
11, a kind of as the said semiconductor laser component of claim 10, it is characterized in that wherein said second metalwork is arranged on the outside of the said first metalwork perisporium.
12, a kind of as the said semiconductor laser component of claim 10, it is characterized in that wherein said first metalwork is to be divided into some, spacing arrangement in accordance with regulations becomes arranged in matrix on second metalwork.
13, a kind ofly it is characterized in that first metalwork wherein and second metalwork are the directions of being arranged to be parallel to hot-fluid that said laser diode chip produces as the said semiconductor laser component of claim 10.
14, a kind ofly it is characterized in that as the said semiconductor laser component of claim 10 first metalwork wherein is by a kind of the making in the copper-tungsten of copper and 30%.
15, a kind ofly it is characterized in that as the said semiconductor laser component of claim 10 a wherein said sheet is made by pottery.
16, a kind ofly it is characterized in that as the said semiconductor laser component of claim 15 wherein said pottery is by a kind of the making in aluminium oxide and the aluminium nitride.
17, a kind ofly it is characterized in that as the said semiconductor laser component of claim 16 thermal coefficient of expansion of wherein said second metalwork is by about 4.5 * 10
-6/ spend to 8.5 * 10
-6/ degree.
18, a kind ofly it is characterized in that as the said semiconductor laser component of claim 17 wherein said second metalwork is by tungsten, Covar, 20% copper molybdenum alloy, 10% copper-tungsten, 15% copper-tungsten and 20% copper-tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98100321A CN1189000A (en) | 1997-01-09 | 1998-01-09 | Semiconductor laser module |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP002115/97 | 1997-01-09 | ||
| CN98100321A CN1189000A (en) | 1997-01-09 | 1998-01-09 | Semiconductor laser module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1189000A true CN1189000A (en) | 1998-07-29 |
Family
ID=5215958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98100321A Pending CN1189000A (en) | 1997-01-09 | 1998-01-09 | Semiconductor laser module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1189000A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320710C (en) * | 2003-11-24 | 2007-06-06 | 中国科学院半导体研究所 | Heat sink for coaxial packaging of surface-emitting laser |
| CN101657899B (en) * | 2007-04-17 | 2012-12-05 | 丰田自动车株式会社 | Power semiconductor module |
| CN101933202B (en) * | 2007-12-17 | 2013-05-29 | 奥兰若光电公司 | Laser emitter modules and methods of assembly |
| CN109560455A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array |
| CN109560456A (en) * | 2018-07-26 | 2019-04-02 | 长春理工大学 | A kind of capsulation structure for semiconductor laser and preparation method thereof |
| US10642138B2 (en) | 2017-09-26 | 2020-05-05 | Qingdao Hisense Laser Display Co., Ltd. | Laser array, laser light source and laser projection device |
| CN111433908A (en) * | 2017-10-27 | 2020-07-17 | 日产自动车株式会社 | Semiconductor device with a plurality of semiconductor chips |
-
1998
- 1998-01-09 CN CN98100321A patent/CN1189000A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320710C (en) * | 2003-11-24 | 2007-06-06 | 中国科学院半导体研究所 | Heat sink for coaxial packaging of surface-emitting laser |
| CN101657899B (en) * | 2007-04-17 | 2012-12-05 | 丰田自动车株式会社 | Power semiconductor module |
| CN101933202B (en) * | 2007-12-17 | 2013-05-29 | 奥兰若光电公司 | Laser emitter modules and methods of assembly |
| CN109560455A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array |
| US10642138B2 (en) | 2017-09-26 | 2020-05-05 | Qingdao Hisense Laser Display Co., Ltd. | Laser array, laser light source and laser projection device |
| CN111433908A (en) * | 2017-10-27 | 2020-07-17 | 日产自动车株式会社 | Semiconductor device with a plurality of semiconductor chips |
| CN109560456A (en) * | 2018-07-26 | 2019-04-02 | 长春理工大学 | A kind of capsulation structure for semiconductor laser and preparation method thereof |
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