CN206379617U - A kind of high-power semiconductor laser - Google Patents
A kind of high-power semiconductor laser Download PDFInfo
- Publication number
- CN206379617U CN206379617U CN201720069559.9U CN201720069559U CN206379617U CN 206379617 U CN206379617 U CN 206379617U CN 201720069559 U CN201720069559 U CN 201720069559U CN 206379617 U CN206379617 U CN 206379617U
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- CN
- China
- Prior art keywords
- laser
- heat sink
- transition heat
- width
- luminescence unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 230000007704 transition Effects 0.000 claims abstract description 56
- 238000004020 luminiscence type Methods 0.000 claims abstract description 36
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 229910000679 solder Inorganic materials 0.000 claims description 28
- 238000005520 cutting process Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 9
- 239000000498 cooling water Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
A kind of high-power semiconductor laser, including base, insulating barrier and laser module；Insulating barrier is provided with base；Insulating layer is provided with positive electrode, laser module and negative electrode, laser module includes at least one laser luminescence unit, laser luminescence unit is made up of the transition heat sink of chip of laser and its both sides, and wherein the transition heat sink of side is the L-type transition heat sink with step.The laser carries the L-type transition heat sink of step by design, adds the contact area of laser luminescence unit and insulating barrier, is easy to bonding, the problem of reducing bonding cavity and be bonded loosely because of contact area is small.The distance of laser element positive and negative electrode is added simultaneously, reduces the probability of short circuit.
Description
Technical field
The utility model is related to a kind of structure of high-power semiconductor laser, belongs to semiconductor laser technology neck
Domain.
Background technology
Because semiconductor laser has, small volume, power is big, steady performance, and its application is also more and more wider
It is general.With semiconductor laser power output more and more higher, semiconductor laser laser welding, laser cutting, laser boring,
The application of the industrial circles such as laser medicine is also developed rapidly.The same performance requirement to laser also more and more higher.Laser
Performance in addition to relevant with epitaxial material, radiating also with laser, encapsulate it is relevant.
The packaging technology of the high-power semiconductor laser of conduction cooling conventional at present mainly has shown in Fig. 1 and Fig. 2
Two kinds.Scheme shown in Fig. 1 be by the transition heat sink (such as copper, copper tungsten) of multiple chips and multiple conductive and heat-conductives and meanwhile welding after,
Integral solder is on insulating heat-conductive substrate again, then by the Module bond on base, fixed electrode, completes the system of laser
It is standby.Or all components are once directly placed into particular jig once bonding completion on demand.
Fig. 2 is the high-power semiconductor laser preparation method of current main flow.By single chip of laser, conductive and heat-conductive mistake
Cross heat sink and insulating heat-conductive piece to weld simultaneously, semiconductor laser luminescence unit is made, laser element is tested, then
Qualified laser element is bonded on base, high-power semiconductor laser is made.
But above-mentioned technique all has the disadvantage that：
(1) the technical process chips of Fig. 1 schemes, heat sink, insulating barrier and base can be bonded simultaneously or successively twice
Bonding shaping, once the uniformity difference of chip will cause whole device not use, device yield is low, causes huge material
And artificial waste；
(2) in Fig. 2 schemes, although avoid the screening problem in Fig. 1 schemes, but it is qualified to equally exist technological requirement height
The low problem of rate.Because, it is necessary to precise clamp and align, together when several semiconductor laser luminescence units are bonded in two schemes
When chip of laser thickness there was only 0.1mm or so, the thickness of transition heat sink typically also only has 1mm or so.Two adjacent hairs
Light unit by during solder bond in the presence of the greater risk of short circuit, while also because size when luminescence unit is bonded on insulating barrier
The small hidden danger that there is welding cavity or not prison welding, causes device weak heat-dissipating, reliability and service life reduction.
Utility model content
In order to overcome the shortcomings of that existing high-power semiconductor laser encapsulation technology is present, the utility model proposes a kind of high
Power semiconductor laser, can effectively solve that laser qualification rate in existing structure scheme is low, bonding quality is poor and reliable
Property it is not high the problems such as, promote high-power semiconductor laser fast development.
High-power semiconductor laser of the present utility model, technical scheme is as follows：
The semiconductor laser, including base, insulating barrier and laser module；Insulating barrier is provided with base；Insulating barrier
Be provided with positive electrode, laser module and negative electrode above, laser module is between positive electrode and negative electrode, positive electrode and
Negative electrode is connected with laser module respectively；Laser module includes at least one laser luminescence unit, and each laser lights
Unit is horizontally arranged on the insulating layer；Laser luminescence unit is by chip of laser and is arranged on the transition of chip of laser both sides
Heat sink to constitute, wherein the transition heat sink of side is the L-type transition heat sink with step, and chip of laser is put with another transition heat sink
On the step of L-type transition heat sink, the base width of L-type transition heat sink is less than the width of laser luminescence unit.
Cooling water cavity is provided with the base.
The base width of the L-type transition heat sink than laser luminescence unit the small 0.2mm-0.6mm of width, to prevent key
It is short-circuit during conjunction.
The positive electrode is arranged on L-type transition heat sink side.
The region that the insulating barrier is combined with laser module carries periodicity cutting, the cycle of cutting and laser module
The width of middle laser luminescence unit is consistent.The width of the cutting lights for the base width of L-type transition heat sink with laser
The difference of the width of unit.
The region that the insulating barrier is contacted with laser module is provided with the solder layer with periodicity isolation channel, isolation channel
Cycle it is consistent with the width of laser luminescence unit, isolation well width is that L-type transition heat sink base width and laser light
The difference of the width of unit.
The base, positive electrode, the surface of negative electrode and transition heat sink are provided with Gold plated Layer.
Advantage of the present utility model is, by designing the L-type transition heat sink with step, to add laser luminous single
The contact area of first and insulating barrier, is easy to bonding, the problem of reducing bonding cavity and be bonded loosely because of contact area is small.
The distance of laser element positive and negative electrode is added simultaneously, reduces the probability of short circuit., can by the implementation of the utility model
Generally lift the yield rate of superpower laser module and improve uniformity.
Brief description of the drawings
Fig. 1 is the process schematic of the first existing semiconductor laser preparation technology.
Fig. 2 is the process schematic of second of existing semiconductor laser preparation technology.
Fig. 3 is the structural representation of the utility model high-power semiconductor laser.
In figure：1st, base；2nd, negative electrode；3rd, L-type transition heat sink；4th, normal transition is heat sink；5th, chip of laser；6th, positive electricity
Pole；7th, insulating barrier；8th, cutting；A, laser luminescence unit width；B, L-type transition heat sink 3 base width.
Embodiment
Embodiment 1
High-power semiconductor laser of the present utility model, as shown in figure 3, including base 1, insulating barrier 7 and laser die
Block.Insulating barrier 7 is provided with base 1.Base 1 is provided with cooling water cavity using the high thermal conductivity material such as copper, in it, with water flowing
Cooling Holes.The top of insulating barrier 7 is provided with laser module, and the both sides of insulating barrier 7 are provided with positive electricity between laser module
Pole 6 and negative electrode 2.Laser module, insulating barrier 7 and base 1 pass through the into complete semiconductor laser of solder bond.Laser
Module includes at least one laser luminescence unit (having three laser luminescence units in Fig. 3), and each laser luminescence unit exists
The upper horizontal of insulating barrier 7 is arranged together.Laser luminescence unit is by chip of laser 5 and is arranged on 5 liang of chip of laser
The transition heat sink of side is constituted, and the transition heat sinks of chip of laser 5 and both sides is by together with solder bond.The wherein transition of side
Heat sink is L-type transition heat sink 3 with the level, and side is normal transition heat sink 4 (pane shape).Chip of laser 5 and common mistake
Heat sink 4 are crossed to be placed on the step of L-type transition heat sink 3, and both step surfaces not with L-type transition heat sink 3 are contacted.L-type transition
Heat sink 3 base width B is less than the width A 0.2mm-0.6mm of laser luminescence unit, to prevent short circuit during bonding.
Positive electrode 6 is arranged on the side of L-type transition heat sink 3, and negative electrode 2 is arranged on heat sink 4 side of normal transition.Positive electrode 6
With the material that negative electrode 2 is the electric-conductivity heat-conductivity high such as copper, silver, can be by way of solder or physics be fixed and laser module
It is attached.
The material of L-type transition heat sink 3 and normal transition heat sink 4 can be copper either tungsten copper.Two kinds of transition heat sinks are with swashing
The solder that the solder that the corresponding bond area of light device chip 5 is used requires for indium solder, golden tin solder or other satisfaction bondings.
Insulating barrier 7 is AlN ceramic material, surface gold-plating.The region that insulating barrier 7 is combined with laser module is with periodically
Cutting 8, the cycle of cutting 8 is consistent with the width of laser luminescence unit.The width of cutting 8 is wide for the base of L-type transition heat sink 3
Spend the width B of A and laser luminescence unit difference.Region of the two sides of insulating barrier 7 in addition to cutting 8 is with bonding temperature
The solder of temperature needed for degree is bonded solder less than transition heat sink, such as indium solder or silver-colored Sn-Cu solder.
Base 1, positive electrode 6, negative electrode 2, L-type transition heat sink 3 and normal transition heat sink 4 surface it is gold-plated.
The preparation process of above-mentioned high-power semiconductor laser is as described below：
1. chip of laser 5 is placed between L-type transition heat sink 3 and normal transition heat sink 4, chip of laser 5 and common
Transition heat sink 4 is placed in above the step of L-type transition heat sink 3 and not contacted with step surface, and three is placed into sintering fixture together,
Once it is bonded by solder, forms laser luminescence unit.Two kinds of transition heat sinks and the corresponding bonding region of chip of laser 5
The solder that domain is required using indium solder, golden tin solder or other satisfaction bondings.
2. pair laser luminescence unit carries out test screen, swash multiple (being preferred with 2-6) of requirement are qualified
Connected between the horizontal formation laser module of light device luminescence unit, laser luminescence unit by indium solder
Connect.Solder bond temperature between laser luminescence unit is bonded temperature less than solder between transition heat sink and chip of laser
Degree.
3. the position designed according to Fig. 3, insulating barrier 7, base 1, positive electrode 6, negative electrode 2 and laser module are assembled
Fixed in fixture.Carried out between positive electrode 6 and laser module and using indium solder between negative electrode 2 and laser module
Connection, is attached between positive electrode 6, negative electrode 2 and laser module three and insulating barrier 7 using solder.Laser module
Seam between middle adjoining laser luminescence unit is in the cutting 8 of insulating barrier 7.Fixture is put into basis in backflow sintering furnace
The bonding temperature of solder carries out bonding shaping.
Solder bond temperature between positive and negative electrode and laser luminescence unit and between positive and negative electrode and insulating barrier is low
The bonding temperature of solder between transition heat sink and chip of laser.
Embodiment 2
The present embodiment and the difference of embodiment 1 be, the solder in one side that insulating barrier 7 is contacted with laser module
With periodic isolation channel.The cycle of isolation channel is consistent with the width A of laser luminescence unit, and isolation well width is L-type mistake
Cross the width A of heat sink 3 base width A and laser luminescence unit difference.
Claims (8)
1. a kind of high-power semiconductor laser, including base, insulating barrier and laser module；It is characterized in that：Set on base
There is insulating barrier；Insulating layer is provided with positive electrode, laser module and negative electrode, and laser module is in positive electrode and negative electricity
Between pole, positive electrode and negative electrode are connected with laser module respectively；It is luminous single that laser module includes at least one laser
Member, each laser luminescence unit is horizontally arranged on the insulating layer；Laser luminescence unit is by chip of laser and is arranged on laser
The transition heat sink of device chip both sides is constituted, and wherein the transition heat sink of side is the L-type transition heat sink with step, chip of laser
On the step that L-type transition heat sink is placed in another transition heat sink, the base width of L-type transition heat sink is less than the luminous list of laser
The width of member.
2. high-power semiconductor laser according to claim 1, it is characterized in that：Cooling water is provided with the base
Chamber.
3. high-power semiconductor laser according to claim 1, it is characterized in that：The base of the L-type transition heat sink is wide
Spend the small 0.2mm-0.6mm of width than laser luminescence unit.
4. high-power semiconductor laser according to claim 1, it is characterized in that：The positive electrode is arranged on L-type transition
Heat sink side.
5. high-power semiconductor laser according to claim 1, it is characterized in that：The insulating barrier and laser die agllutination
The region of conjunction carries periodicity cutting, and the cycle of cutting is consistent with the width of laser luminescence unit in laser module.
6. high-power semiconductor laser according to claim 5, it is characterized in that：The width of the cutting is L-type transition
Heat sink base width and the difference of the width of laser luminescence unit.
7. high-power semiconductor laser according to claim 1, it is characterized in that：The insulating barrier connects with laser module
Tactile region is provided with the solder layer with periodicity isolation channel, the cycle of isolation channel and the width one of laser luminescence unit
Cause, isolation well width is the difference of the width of L-type transition heat sink base width and laser luminescence unit.
8. high-power semiconductor laser according to claim 1, it is characterized in that：The base, positive electrode, negative electrode and
The surface of transition heat sink is provided with Gold plated Layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720069559.9U CN206379617U (en) | 2017-01-20 | 2017-01-20 | A kind of high-power semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720069559.9U CN206379617U (en) | 2017-01-20 | 2017-01-20 | A kind of high-power semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206379617U true CN206379617U (en) | 2017-08-04 |
Family
ID=59400442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720069559.9U Withdrawn - After Issue CN206379617U (en) | 2017-01-20 | 2017-01-20 | A kind of high-power semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206379617U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336640A (en) * | 2017-01-20 | 2018-07-27 | 山东华光光电子股份有限公司 | A kind of high-power semiconductor laser and preparation method thereof |
-
2017
- 2017-01-20 CN CN201720069559.9U patent/CN206379617U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336640A (en) * | 2017-01-20 | 2018-07-27 | 山东华光光电子股份有限公司 | A kind of high-power semiconductor laser and preparation method thereof |
| CN108336640B (en) * | 2017-01-20 | 2024-02-09 | 山东华光光电子股份有限公司 | High-power semiconductor laser and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170804 Effective date of abandoning: 20240209 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20170804 Effective date of abandoning: 20240209 |