CN109920904A - The radiator structure and processing technology of high-power GaN-based LED - Google Patents
The radiator structure and processing technology of high-power GaN-based LED Download PDFInfo
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- 239000010949 copper Substances 0.000 claims abstract description 71
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Abstract
The present invention provides the radiator structure and processing technology of a kind of high-power GaN-based LED, its structure includes LED core blade unit, conducting resinl, graphene film, covers copper ceramic substrate, heat-conducting silicone grease, radiator, and LED core blade unit is connect using upside-down mounting mode with layers of copper on copper ceramic substrate is covered.Wherein using chemical vapour deposition technique in designed graphical DBC grown on substrates graphene, as the heat dissipating layer contacted with chip sides, under the premise of not influencing chip top and bottom heat transfer itself, utilize the lateral high heat conductance of graphene, it will be then transmitted on substrate in the heat rapid lateral transport to graphene heat dissipating layer of chip surrounding side, increase new heat conduction path；Heat conduction path is shortened using the interconnection mode of flip-chip, enhances integrally-built heat dissipation performance, realizes effective heat dissipation of local high heat flux density hot spot, to reduce the maximum temperature of LED component, promotes the luminous efficiency and service life of GaN base LED.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of radiator structure and processing work of high-power GaN-based LED
Skill.
Background technique
LED is widely used in new-energy automobile field, and use in the car includes third brake lamp, left and right taillight, side
To lamp and instrument board, the indicator light of sound equipment etc., market is very huge.In recent years, the material of LED and structure have all obtained biggish
Development.Just GaN base LED luminous efficiency can reach 231lm/W at present, if under identical luminous intensity, compared to biography
System LED component has more significant advantage, can play good energy saving effect.It can be seen that GaN base LED component
In new-energy automobile, this field plays key player.
The generally existing heat management problems of great power LED, high heat can cause very big harm in efficiency to device and service life.
Great power LED in use, if heat cannot shed in time, will lead to the raising of PN junction junction temperature, LED dominant wavelength or λ p are just
It can drift about to long wavelength, influence luminescent color, original intensity can also decline.The excessively high fast prompt drop of luminous efficiency that can make LED of temperature
It is low, generate apparent light decay.And excessively high temperature can make the encapsulating material of LED to rubber-like transformation and thermal expansion coefficient it is rapid
It rises, open a way so as to cause LED and fails.Due to the extensive use of LED in the car, negatively affected in conjunction with LED fever bring,
The problem of greatly may cause secure context.
In order to guarantee the reliability service of great power LED, just have to solve its heat dissipation problem.Traditional radiator structure has silicon
Base flip chip structure, metal circuit board structure and micro-pumping structure, but all have the defects that certain, such as silicon base chip, silicon
The heating conduction of piece is limited；The pcb board heating conduction of metal circuit board structure is very poor；Micro-pumping structure is excessively complicated, no
Suitable for all devices.So research heat sinking mode has a very important significance.
Summary of the invention
The purpose of the present invention is to provide a kind of radiating structures of high-power GaN-based LED, on covering copper ceramic substrate
Graphene film is grown according to designed graphic structure chemical vapour deposition technique, obtains graphically covering copper based on graphene
Ceramic substrate, graph position correspond to the installation site of chip, allow chip be embedded in designed figure just, remove LED chip
The surrounding of front and back is in contact with graphene film, increases sinking path, improves the heat-sinking capability of LED entirety.
In order to achieve the above objectives, the present invention uses following technical scheme.
The radiator structure of the high-power GaN-based LED, including LED core blade unit, conducting resinl, graphene film, cover copper
Ceramic substrate, heat-conducting silicone grease, radiator, wherein covering copper ceramic substrate with upper layers of copper and lower layers of copper, LED core blade unit uses
Dress mode is connect with layers of copper on copper ceramic substrate is covered, and it is described by heat-conducting silicone grease connection radiator to cover layers of copper under copper ceramic substrate
Covering has the pattern grooves for accommodating LED core blade unit in the upper layers of copper of copper ceramic substrate, on upper layers of copper surface, production has patterned
Graphene film, LED core blade unit are inverted in the pattern grooves, and the front of LED core blade unit passes through conducting resinl and upper copper
Layer connection, the surrounding of LED core blade unit are contacted with the graphene film in upper layers of copper, by covering copper pottery between LED core blade unit
Circuit in porcelain substrate realizes connection.
Further, the conducting resinl is the epoxide resin conductive adhesive of graphene powder filling.
Further, the graphene film is with a thickness of 18~20 μm.
Further, the conducting resinl in pattern grooves is covered on a thickness of 10 ± 0.5 μm.
Further, the LED core blade unit include Sapphire Substrate front stack gradually production n-type GaN layer,
GaN base quantum well layer and p-type GaN layer, on p-type GaN layer surface, production has p-type electrode, and also making on n-type GaN layer surface has N-shaped
Electrode.
Further, the radiator is fin shape, and material is metallic aluminium.
The processing technology of the radiator structure of above-mentioned high-power GaN-based LED, comprising the following steps:
The position design of step 1. LED core blade unit in the upper layers of copper for cover copper ceramic substrate is multiple and LED chip
The pattern grooves that cell configuration size matches grow graphene film in entire upper layers of copper using chemical vapour deposition technique；
Polymethyl methacrylate solution is plotted in by graphene film using printing technology in the position of all corresponding pattern grooves
On surface, polydimethylsiloxane liquid is added dropwise on the graphene film surface that above-mentioned completion pattern is drawn, covers all gather
The position that methyl methacrylate is smeared, reheating drying solidifies dimethyl silicone polymer, forms protective layer；Then by poly- two
Methylsiloxane protective layer is thrown off from graphene film, and the graphene of polymethyl methacrylate and its covering will be with poly- two
Methylsiloxane is lifted-off together, and required figure is finally left on graphene film, to obtain based on graphene
Graphically cover copper ceramic substrate；
The graphene powder that step 2. is prepared using micromechanics stripping method or chemistry redox method, is filled into asphalt mixtures modified by epoxy resin
Rouge is in the conducting resinl of matrix, for the interconnection between chip and substrate；
Step 3. is covering the pattern grooves bottom surface progress dispensing on copper ceramic substrate, is covered with conducting resinl prepared by step 2
In pattern grooves, then the front of LED core blade unit is inverted and is placed in corresponding pattern grooves, LED core is heat-treated to
Blade unit, which is firmly fixed on, to be covered on copper ceramic substrate, and the graphene film in the surrounding of LED core blade unit and upper layers of copper
Contact completes LED core blade unit and passes through conducting resinl and the interconnection for covering copper ceramic substrate；
Step 4. cleaning radiator and the lower layers of copper surface for covering copper ceramic substrate, it is a small amount of in radiator central point after dry
Heat-conducting silicone grease is uniformly smeared and is opened, and the structure for then obtaining step 3 is flattened on spreader surface, and fixation is allowed to fit closely.
The present invention compared with prior art, has the advantages that
1, the increased graphene film of the present invention increases new heat dissipation under the premise of no change original heat dissipation channel
Heat is quickly and effectively transmitted to entire stone from the side of chip by the transverse heat transfer ability that graphene is excellent by approach
On black alkene film, and then substrate is transmitted to radiator by graphene film, effectively reduces the maximum temperature of device.
2, the present invention using graphene powder fill epoxide resin material made of conducting resinl as LED core blade unit with cover
Interconnection material between copper ceramic substrate enhances chip to the capacity of heat transmission of substrate, while the mode of LED chip upside-down mounting also mentions
The high integrally-built heat-sinking capability of device plays in the high heat flux density caused by high quantity, highdensity chip package
Very important effect.
Detailed description of the invention
Fig. 1 is the radiator structure schematic diagram of high-power GaN-based LED proposed by the present invention.
Fig. 2 is chip structure schematic diagram proposed by the present invention.
Fig. 3 a is the graphical DBC substrate schematic diagram proposed by the present invention based on graphene.
Fig. 3 b is the radiator structure partial schematic diagram of the high-power GaN-based LED proposed by the present invention with graphene film.
Fig. 4 is traditional high-power GaN-based LED radiator structure and heat conduction path schematic diagram.
Fig. 5 is the heat conduction path schematic diagram of high-power GaN-based LED proposed by the present invention.
Fig. 6 is high-power GaN-based LED upper surface heat conduction path schematic diagram proposed by the present invention.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
Referring to Fig. 1 and Fig. 2, the invention proposes a kind of radiator structures of high-power GaN-based LED, including LED core blade unit
21, conducting resinl 7, graphene film 13, cover copper ceramic substrate, heat-conducting silicone grease 11, radiator 12, wherein covering copper ceramic substrate has
Upper layers of copper 8 and lower layers of copper 10, LED core blade unit 21 are connect using upside-down mounting mode with layers of copper 8 on copper ceramic substrate is covered, and copper ceramics are covered
Layers of copper 10 connects radiator by heat-conducting silicone grease 11 under substrate.Covering copper ceramic substrate (Direct Bonded Copper, DBC) is
There is upper layers of copper 8 in the upper surface of AlN ceramic 9, lower surface has the substrate of lower layers of copper 10.The copper ceramic substrate of covering
Design has the pattern grooves for accommodating LED core blade unit 21 in upper layers of copper 8, and on upper 8 surface of layers of copper, production has patterned graphene
Film 13, LED core blade unit 21 are inverted in the pattern grooves, and the front of LED core blade unit 21 passes through conducting resinl 7 and upper copper
Layer 8 connects, and the surrounding of LED core blade unit 21 is contacted with the graphene film 13 in upper layers of copper 8, leads between LED core blade unit 21
It crosses the circuit covered in copper ceramic substrate and realizes connection.
The present invention covers growth patterned graphene film on copper ceramic substrate designed using chemical vapour deposition technique,
Graphene is utilized under the premise of not influencing chip top and bottom heat transfer itself as the heat dissipating layer contacted with LED chip side
Lateral high heat conductance be then transmitted to base in the heat rapid lateral transport to graphene heat dissipating layer of chip surrounding side
On plate, new heat conduction path is increased；Heat conduction path is shortened using the interconnection mode of flip-chip, is enhanced integrally-built
Heat dissipation performance, realizes effective heat dissipation of local high heat flux density hot spot, to reduce the maximum temperature of LED component, promotes GaN base
The luminous efficiency and service life of LED.
The invention also provides the manufacture crafts of above structure, to use the LED core made on graphical sapphire substrate
For blade unit, comprising the following steps:
Sapphire Substrate 1 used in step 1. embodiment is graphical sapphire substrate (PSS), blue precious with being dry-etched in
The light-emitting surface at stone lining bottom and epitaxial growth plane two sides all make recessed hemispherical figure, after surface clean, using MOCVD method in indigo plant
The epitaxial growth plane of jewel grows GaN buffer layer, then sequential deposition n-type GaN layer 2, GaN base quantum well layer 3, p-type GaN layer 4.So
Afterwards in the metal electrode layer (i.e. p-type electrode 5) that layer of Ni-Au composition is deposited in p-type GaN layer, the evaporating n type in n-type GaN layer
Electrode 6, electrode material Pt complete the production of LED core blade unit 21.
Step 2. is using chemical vapour deposition technique directly in DBC grown on substrates graphene.
9 and chip form size phase are devised in upper layers of copper 8 in the corresponding installation site of chip referring to Fig. 3 a
The pattern grooves matched, pattern grooves include the square indentations of 91 × 1mm in embodiment.Using chemical vapour deposition technique whole
The graphene film that 18~20 μ m-thicks are grown in a upper layers of copper 8, will using printing technology in all corresponding pattern grooves positions
PMMA (polymethyl methacrylate) solution is plotted on the surface of graphene film 13, shape size and pattern grooves one
Sample, it is grid-shaped, half an hour is then stood in air, and PMMA film on the surface of graphene can be obtained.Above-mentioned complete
Fraction of PDMS (dimethyl silicone polymer) liquid is added dropwise at the graphene film surface that pattern is drawn, covers all PMMA and applies
The position smeared, then heating, drying solidifies PDMS, forms protective layer, then takes off PDMS protective layer from graphene film 13
It goes.Since the cohesive force of PMMA and PDMS are stronger, while PMMA and graphene of its covering also have a stronger active force, and PDMS
It is weaker with the cohesive force of graphene, therefore PMMA and its graphene of covering will be lifted-off together with PDMS, finally in graphite
Required figure is left on alkene film 13, to obtain the graphical DBC substrate based on graphene.
The graphene powder that step 3. is prepared using micromechanics stripping method or chemistry redox method, is filled into asphalt mixtures modified by epoxy resin
Rouge is to enhance thermal conductivity, for the interconnection between chip and substrate in the conducting resinl 7 of matrix.
Pattern grooves bottom surface of the step 4. on DBC substrate carries out dispensing, is covered with the conducting resinl 7 that graphene powder is filled
In pattern grooves, with a thickness of 10 ± 0.5 μm.Then the front of bare chip that step 1 completes is inverted and is placed in pair
In the pattern grooves answered, referring to Fig. 3 b, it is heat-treated to chip and is firmly fixed on substrate, and the four of LED core blade unit 21
All graphene films 13 in upper layers of copper 8 contact.LED core blade unit 21 is completed by conducting resinl 7 and covers copper ceramic substrate
Interconnection.
Step 5. covers the interconnection of copper ceramic substrate Yu radiator 12.10 surface of layers of copper under radiator 12 and substrate is cleaned, is done
After dry, in a small amount of heat-conducting silicone grease 11 in radiator central point, uniformly smear and open, the structure of step 4 is then flattened on radiator 12
Surface, fixation are allowed to fit closely.Complete integrally-built basic encapsulation.
The radiator structure of traditional high-power GaN-based LED is as shown in figure 4, there is high heat flux density on LED core blade unit 21
Hot spot, since chip uses the interconnection mode of upside-down mounting, heat directly conducts to chip front side, passes downwardly through interconnection material and successively pass
It is delivered to substrate, radiator.Minor heat is conducted to chip back, and sapphire heating conduction is insufficient, can not be passed by the back side
Pass more heat transfer.Such heat conduction path capacity of heat transmission is limited, to the more demanding of radiator, biggish fin is needed to dissipate
Hot device or the better radiator of performance, and it is difficult to meet the needs of following great power LED.
A kind of radiating structure of high-power GaN-based LED proposed by the present invention, heat conduction path such as Fig. 5 and Fig. 6 institute
Show, the high heat flux density hot spot that chip interior generates, due to the side surrounding of LED core blade unit 21 and connecing for graphene film 13
Touching, under the premise of not destroying original heat conduction path, provides new heat conduction path.Utilize the lateral high fever of graphene
The high heat that hot spot generates rapidly is transmitted on entire graphene film 13 by conductance, graphene film 13 and DBC substrate
Upper layers of copper 8 comes into contact in a large area, and heat can be made rapidly to be transmitted on substrate, and heat passes sequentially through layers of copper 8, AlN ceramic
Substrate 9, lower layers of copper 10, heat-conducting silicone grease 11 to radiator 12.Rapidly reduce the maximum temperature of entire device.
The present invention is contacted using the patterned graphene of chemical vapour deposition technique preparation by the surrounding side with chip, is sent out
Its excellent transverse heat transfer performance is waved, the heat that the hot localised points on chip generate is transmitted to rapidly entire surface, is enhanced
The lateral thermal conductivity energy of entire radiator structure.Including the Graphene powder prepared using micromechanics stripping method or chemistry redox method
End is filled into using epoxy resin to enhance its thermal conductivity in the conducting resinl of matrix, interconnects for chip and substrate, increases
Strong longitudinal capacity of heat transmission of device.The enhancing of horizontal and vertical capacity of heat transmission significantly effectively reduces the highest of device
Temperature improves the heat dissipation performance of device.The interconnection mode of flip-chip, patterned sapphire substrate are device light emitting efficiency
Very big effect is provided with service life.
The present invention applies the graphene with high heat conductance in high-power GaN-based LED device, solves great power LED
Heat dissipation bottleneck problem so that high power lighting lamp bring security risk and service life due to the fever of LED are asked
Topic has obtained good improvement.Grapheme material has highly thermally conductive good characteristic, and future may substitute dissipating for conventional LED devices
Heat structure, while also more excellent scheme is provided for the cost decline of LED illumination product.
Of the present invention is only presently preferred embodiments of the present invention, is not intended to limit the invention, all of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within spirit and principle.
Claims (9)
1. the radiator structure of high-power GaN-based LED, including LED core blade unit (21), conducting resinl (7), graphene film (13),
Copper ceramic substrate, heat-conducting silicone grease (11), radiator (12) are covered, wherein covering copper ceramic substrate with upper layers of copper (8) and lower layers of copper
(10), LED core blade unit (21) is connect using upside-down mounting mode with layers of copper (8) on copper ceramic substrate is covered, and covers copper under copper ceramic substrate
Layer (10) passes through heat-conducting silicone grease (11) connection radiator (12), characterized in that has in the upper layers of copper (8) for covering copper ceramic substrate
The pattern grooves for accommodating LED core blade unit (21), on upper layers of copper (8) surface, production has patterned graphene film (13), LED
Chip unit (21) is inverted in the pattern grooves, and the front of LED core blade unit (21) passes through conducting resinl (7) and upper layers of copper
(8) it connects, the surrounding of LED core blade unit (21) is contacted with the graphene film (13) on upper layers of copper (8), LED core blade unit
(21) connection is realized by covering the circuit in copper ceramic substrate between.
2. the radiator structure of high-power GaN-based LED as described in claim 1, characterized in that the conducting resinl (7) is graphite
The epoxide resin conductive adhesive of alkene powder filling.
3. the radiator structure of high-power GaN-based LED as described in claim 1, characterized in that the graphene film (13) is thick
Degree is 18~20 μm.
4. the radiator structure of high-power GaN-based LED as described in claim 1, characterized in that be covered on leading in pattern grooves
Electric glue (7) is with a thickness of 10 ± 0.5 μm.
5. the radiator structure of high-power GaN-based LED as described in claim 1, characterized in that the LED core blade unit (21)
It is included in n-type GaN layer (2), GaN base quantum well layer (3) and p-type GaN layer that Sapphire Substrate (1) front stacks gradually production
(4), on p-type GaN layer (4) surface, production has p-type electrode (5), and also making on n-type GaN layer (2) surface has n-type electrode (6).
6. the radiator structure of high-power GaN-based LED as described in claim 1, characterized in that the radiator (12) is fin
Shape, material are metallic aluminiums.
7. the processing technology of the radiator structure of high-power GaN-based LED, characterized in that the following steps are included:
The position design of step 1. LED core blade unit (21) in the upper layers of copper (8) for cover copper ceramic substrate is multiple and LED core
The pattern grooves that blade unit (21) shape size matches grow stone on entire upper layers of copper (8) using chemical vapour deposition technique
Black alkene film (13)；Polymethyl methacrylate solution is plotted in using printing technology in the position of all corresponding pattern grooves
On the surface of graphene film, dimethyl silicone polymer liquid is added dropwise on graphene film (13) surface that above-mentioned completion pattern is drawn
Body covers the position that all polymethyl methacrylates are smeared, and reheating drying solidifies dimethyl silicone polymer, is formed and is protected
Sheath；Dimethyl silicone polymer protective layer is thrown off from graphene film (13) then, polymethyl methacrylate and its is covered
The graphene of lid will be lifted-off together with dimethyl silicone polymer, finally leave required figure on graphene film (13)
Shape, to obtain graphically covering copper ceramic substrate based on graphene；
The graphene powder that step 2. is prepared using micromechanics stripping method or chemistry redox method, is filled into and is with epoxy resin
In the conducting resinl (7) of matrix, for the interconnection between chip and substrate；
Step 3. is covering the pattern grooves bottom surface progress dispensing on copper ceramic substrate, is covered on conducting resinl (7) prepared by step 2
In pattern grooves, then the front of LED core blade unit (21) is inverted and is placed in corresponding pattern grooves, LED is heat-treated to
Chip unit (21), which is firmly fixed on, to be covered on copper ceramic substrate, and on the surrounding of LED core blade unit (21) and upper layers of copper (8)
Graphene film (13) contact, complete LED core blade unit (21) by conducting resinl (7) with cover the interconnection of copper ceramic substrate；
Step 4. cleaning radiator (12) and lower layers of copper (10) surface for covering copper ceramic substrate, after dry, in radiator (12)
The a small amount of heat-conducting silicone grease (11) of centre point, uniformly smears and opens, and the structure for then obtaining step 3 is flattened on radiator (12) surface, Gu
Surely it is allowed to fit closely.
8. the processing technology of the radiator structure of high-power GaN-based LED as claimed in claim 7, characterized in that described to be covered on figure
Conducting resinl (7) in shape groove is with a thickness of 10 ± 0.5 μm.
9. the processing technology of the radiator structure of high-power GaN-based LED as claimed in claim 7, characterized in that the graphene is thin
Film (13) is with a thickness of 18~20 μm.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080143245A1 (en) * | 2006-12-18 | 2008-06-19 | Ching-Chuan Shiue | Electroluminescent module |
| CN201117676Y (en) * | 2007-08-17 | 2008-09-17 | 广东昭信光电科技有限公司 | Integrated microstructure high power light-emitting diode packaging structure |
| US20090267102A1 (en) * | 2008-03-12 | 2009-10-29 | Industrial Technology Research Institute | Light emitting diode package structure and method for fabricating the same |
| US20100085713A1 (en) * | 2008-10-03 | 2010-04-08 | Balandin Alexander A | Lateral graphene heat spreaders for electronic and optoelectronic devices and circuits |
| CN103925581A (en) * | 2013-10-29 | 2014-07-16 | 蔡鸿 | LED lamp heat dissipation structure |
| CN204289526U (en) * | 2014-12-31 | 2015-04-22 | 天际(吉安)光电信息有限公司 | Light emitting diode construction |
| CN204437861U (en) * | 2015-02-06 | 2015-07-01 | 东莞佰鸿电子有限公司 | A kind of LED lamp with high efficiency and heat radiation printed circuit board (PCB) |
| CN105023858A (en) * | 2015-06-05 | 2015-11-04 | 南京大学 | An LED device integrating graphene temperature sensing and a manufacturing method thereof |
| GB2531809A (en) * | 2014-11-03 | 2016-05-04 | Graphene Lighting Plc | Light emitting structures and devices |
| KR101877322B1 (en) * | 2017-03-29 | 2018-07-11 | (주)엘이디월드 | LED package module using graphene pin inserted heat sink and graphene radiant heat plate |
| CN108321134A (en) * | 2018-04-09 | 2018-07-24 | 黄山宝霓二维新材科技有限公司 | The encapsulating structure and processing technology of the plastic sealed IPM modules of high power density |
| CN109037174A (en) * | 2018-07-13 | 2018-12-18 | 深圳烯创技术有限公司 | A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate |
| CN209515738U (en) * | 2019-04-10 | 2019-10-18 | 黄山学院 | The radiator structure of high-power GaN-based LED |
-
2019
- 2019-04-10 CN CN201910283833.6A patent/CN109920904B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080143245A1 (en) * | 2006-12-18 | 2008-06-19 | Ching-Chuan Shiue | Electroluminescent module |
| CN201117676Y (en) * | 2007-08-17 | 2008-09-17 | 广东昭信光电科技有限公司 | Integrated microstructure high power light-emitting diode packaging structure |
| US20090267102A1 (en) * | 2008-03-12 | 2009-10-29 | Industrial Technology Research Institute | Light emitting diode package structure and method for fabricating the same |
| US20100085713A1 (en) * | 2008-10-03 | 2010-04-08 | Balandin Alexander A | Lateral graphene heat spreaders for electronic and optoelectronic devices and circuits |
| CN103925581A (en) * | 2013-10-29 | 2014-07-16 | 蔡鸿 | LED lamp heat dissipation structure |
| GB2531809A (en) * | 2014-11-03 | 2016-05-04 | Graphene Lighting Plc | Light emitting structures and devices |
| CN204289526U (en) * | 2014-12-31 | 2015-04-22 | 天际(吉安)光电信息有限公司 | Light emitting diode construction |
| CN204437861U (en) * | 2015-02-06 | 2015-07-01 | 东莞佰鸿电子有限公司 | A kind of LED lamp with high efficiency and heat radiation printed circuit board (PCB) |
| CN105023858A (en) * | 2015-06-05 | 2015-11-04 | 南京大学 | An LED device integrating graphene temperature sensing and a manufacturing method thereof |
| KR101877322B1 (en) * | 2017-03-29 | 2018-07-11 | (주)엘이디월드 | LED package module using graphene pin inserted heat sink and graphene radiant heat plate |
| CN108321134A (en) * | 2018-04-09 | 2018-07-24 | 黄山宝霓二维新材科技有限公司 | The encapsulating structure and processing technology of the plastic sealed IPM modules of high power density |
| CN109037174A (en) * | 2018-07-13 | 2018-12-18 | 深圳烯创技术有限公司 | A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate |
| CN209515738U (en) * | 2019-04-10 | 2019-10-18 | 黄山学院 | The radiator structure of high-power GaN-based LED |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491857A (en) * | 2019-09-18 | 2019-11-22 | 深圳爱仕特科技有限公司 | A kind of DBC structure suitable for the encapsulation of high voltage power device module |
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