TWI237411B - Process and structure for packaging LED's - Google Patents
Process and structure for packaging LED's Download PDFInfo
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- TWI237411B TWI237411B TW93137653A TW93137653A TWI237411B TW I237411 B TWI237411 B TW I237411B TW 93137653 A TW93137653 A TW 93137653A TW 93137653 A TW93137653 A TW 93137653A TW I237411 B TWI237411 B TW I237411B
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Abstract
Description
1237411 五、發明說明(1) " ~一"'~ ---— ----- 【發明所屬之技術領域】 本發明係有關於-種發光二極體晶片封裝製程 ::關於一種在設置反射件前預先形成俨丄 發光二極體晶片封裝製程。 揭对膠月豆心 【先前技術】 習知發光二極體封裝(Light_emitting di()de P^kage’ LED package)係為一種常見的半導體封裝型1237411 V. Description of the invention (1) " ~ 一 " '~ ----- ----- [Technical field to which the invention belongs] The present invention relates to a light-emitting diode chip packaging process :: about a A chirped light emitting diode chip packaging process is formed in advance before the reflector is set. Revealing the Right Moon Heart [Previous Technology] It is known that the light emitting diode package (Light_emitting di () de P ^ kage ’LED package) is a common semiconductor package type
態,其係具有高亮度、耐腐蝕、低耗電、反應速度快、斧 命長及可靠度佳的優點。 T 一種習知高亮度發光二極體晶片封裝製程係說明如 下。請參閱第1A圖,首先提供一晶片載體11(),其係具有φ 一表面111,接著,請參閱第iB圖,設置一金屬反射件i 2〇 於該表面111,用以反射光線並具有散熱之功能,該金屬 反射件1 2 0係具有一光滑反射面1 2 1及一開孔1 2 2,該開孔 1 2 2係與該晶片載體u 〇構成一晶片容置空間a,之後,請‘ 參閱第1 C圖,設置一發光二極體晶片1 30於該晶片容置空 間A ’請參閱第1 D圖,再形成一透光性封膠體1 4 〇於該晶片 容置空間A,以密封該發光二極體晶片1 3〇,該透光性封膠 體1 4 0係接觸並黏接該金屬反射件1 2 0之該反射面1 2 1,以 製造習知之發光二極體封裝構造1 〇 〇。 # 由於在上述之習知發光二極體晶片封裝製程中,係先 將該金屬反射件12〇設置該晶片載體110上,再形成該透光 性封膠體1 40以密封該發光二極體晶片1 30,因此該透光性 封膠體140係黏接該金屬反射件1 20之該光滑反射面121,It has the advantages of high brightness, corrosion resistance, low power consumption, fast response speed, long axe life and good reliability. T A conventional high-brightness light-emitting diode chip packaging process is described below. Please refer to FIG. 1A. First, a wafer carrier 11 () is provided, which has a φ surface 111. Then, referring to FIG. IB, a metal reflector i 2o is provided on the surface 111 to reflect light and has For the function of heat dissipation, the metal reflecting member 1 2 0 has a smooth reflecting surface 1 2 1 and an opening 1 2 2. The opening 1 2 2 and the wafer carrier u 0 form a wafer accommodating space a. Please refer to FIG. 1C to set a light-emitting diode wafer 1 30 in the wafer accommodating space A. Please refer to FIG. 1D to form a translucent sealing gel 1 4 〇 in the wafer accommodating space. A, to seal the light-emitting diode wafer 130, and the light-transmitting sealant 140 is in contact with and adheres to the reflective surface 1 2 1 of the metal reflection member 120 to make a conventional light-emitting diode Body package structure 100. # In the conventional light-emitting diode chip packaging process described above, the metal reflector 120 is first set on the wafer carrier 110, and then the light-transmitting sealing compound 1 40 is formed to seal the light-emitting diode wafer. 1 30, so the translucent sealing compound 140 is adhered to the smooth reflecting surface 121 of the metal reflecting member 1 20,
第7頁 1237411 五、發明說明(2) 而使仔該光滑 差,其係容易 接合處,會產 導致影響該發 一種習知 證號第220282 不者’其係提 一載體,接著 一平坦層,然 光二極體晶粒 片與反射面, 反射面係為一 反射面係有分 亮度及品質。 【發明内容】 本發明之 裝製程,首先 載體,之後, 封該些發光二 複數個溝槽, 容置空間,之 容置空間中, 反射面1 21與識透光性封膠體1 4 Q之結合力較 於該光滑反射面1 2 1與該透光性封膠體1 4 〇夕 生不規則之龜裂而有分層損壞之情況發生, 光二極體封裝構造1 0 0之亮度及品質。 發光*一極體晶片封裝製程’如中華民國專利 號「提咼發光二極體免度之封裳方法」所揭 供一種發光二極體之封裝方法,首先,提供 ,對該載體之表面進行平坦化處理,以形成 後,於該平坦層上形成一反射面,再貼附發 於該載體上,最後形成一樹脂以密封該些晶 其中,該樹脂係黏接至該反射面,並且,因 光滑面而具有較差之接合力,故該樹脂與該 層4貝壞之情況發生’因而影響發光二極體之 主要目 ,係將 形成一 極體晶 該些溝 後,再 用以反 反射件之一反射面係 免該些金屬反射件之 的係在於提 複數個發光 透光性模封 片,接著, 槽係與該晶 設置複數個 射光線並具 不黏接該透 該反射面與 供一種發光二極體晶片封 二極體晶片設 膠體於該晶片 於該透光性模 片載體構成複 金屬反射件於 有散熱之功能 光性模封膠體 該透光性模封 置於一晶片 載體,以密 封膠體形成 數個反射件 該些反射件 ,該些金屬 ,因此可避 膠體產生不Page 7 1237411 V. Description of the invention (2) To make the baby smooth and poor, it is easy to join, which will affect the development of a kind of certificate No. 220282 No. 'It is a carrier, followed by a flat layer However, the light-emitting diode chip piece and the reflecting surface, the reflecting surface is a reflecting surface, and has brightness and quality. [Summary of the invention] In the packaging process of the present invention, the carrier is firstly sealed, and then the two or more light emitting grooves are sealed. In the containing space, the reflecting surface 1 21 and the translucent sealing gel 1 4 Q Compared with the smooth reflective surface 1 2 1 and the transparent sealing gel 1 4 0, irregular bonding cracks and layer breakages occur, and the brightness and quality of the photodiode package structure 100 are. Luminescence * one-pole wafer packaging process, as disclosed in the Republic of China Patent No. "Method for Enhancing Light-emitting Diode Exemption", provides a method for packaging light-emitting diodes. First, the surface of the carrier is provided. After the planarization process is performed, a reflective surface is formed on the flat layer, and then attached to the carrier, and finally a resin is formed to seal the crystals, and the resin is adhered to the reflective surface, and, Because the smooth surface has a poor bonding force, the resin and the layer are damaged. Therefore, the main purpose of affecting the light-emitting diode is to form a polar crystal and the grooves, and then use it for reflection. The reflection surface of one of the pieces is free of the metal reflection pieces. It is to raise a plurality of light-transmitting and translucent molding sheets. Then, the groove system and the crystal are provided with a plurality of light rays and do not adhere to the reflection surface and the reflection surface. A light-emitting diode wafer encapsulating a diode wafer is provided with a colloid on the wafer and the translucent mold carrier forms a composite metal reflecting member. The light-transmitting mold encapsulation colloid is placed on a wafer. Carry To form a plurality of colloidal seal the plurality of reflective member reflecting member, the plurality of metal, thus avoiding colloids produce
第8頁 1237411Page 8 1237411
五、發明說明(3) 定向之龜裂與分層損壞之情況發味。 本發明之次要目的係在提供一種發光二極體封裝構 造,其係包含一基板、一發光二極體晶片、一透光性模封 膠體及一金屬^射件,該發光二極體晶片係設置於該晶片 載體之该載體單凡,該透光性模封膠體係形成於該晶片栽 體之該表面,以密封該發光二極體晶片,該金屬反射件係 位於對應之載’肢單兀上並圍繞對應之該些發光二極體晶 片,其中該金屬反射件之一反射面係不黏接該透光性模封 膠體,可避免该些金屬反射件之該反射面與該透光性模封 膠體產生分層損壞之情況,而影響發光二體之亮度與品 質。 依本發明之發光二極體晶片封裝製程,其係主要包含 =下的步驟:首先,提供一晶片載體,該晶片載體係具有 :表面’並包含有複數個載體單元;之後,設置複數個發 光一極體晶片於該晶片載體;接著,形成一透光性模封膠 體於忒晶片載體之該表面,以密封該些發光二極體晶片; t後方、A透光性模封膠體形成複數個溝槽,以使該些溝 槽與该晶片載體構成複數個反射件容置空間;接著,再設 置複數個金屬反射件於該些反射件容置空間,以利 光二極體封裝構造。 、 【貫施方式】V. Description of the invention (3) The cracking and delamination damage of the directional odor. A secondary object of the present invention is to provide a light-emitting diode package structure, which includes a substrate, a light-emitting diode wafer, a light-transmitting moldable gel, and a metal emitter. The light-emitting diode wafer The carrier is provided on the wafer carrier. The light-transmissive molding compound system is formed on the surface of the wafer carrier to seal the light-emitting diode wafer. The metal reflector is located on the corresponding carrier limb. The corresponding light emitting diode wafers are placed on and around the light emitting diodes, and one of the reflective surfaces of the metal reflecting member is not adhered to the transparent molding compound, which can avoid the reflecting surface of the metallic reflecting member and the transparent member. The optical moldable colloid has delamination damage, which affects the brightness and quality of the light-emitting body. The light-emitting diode chip packaging process according to the present invention mainly includes the following steps: First, a wafer carrier is provided. The wafer carrier has: a surface and includes a plurality of carrier units; and then, a plurality of light-emitting units are provided. A polar wafer is on the wafer carrier; then, a light-transmitting molding gel is formed on the surface of the wafer carrier to seal the light-emitting diode wafers; t rear, A light-transmitting molding gel is formed into a plurality of Grooves, so that the grooves and the wafer carrier form a plurality of reflecting member accommodating spaces; then, a plurality of metal reflecting members are set in the reflecting member accommodating spaces to facilitate the light diode packaging structure. , [Implementation method]
參閱所附圖式,本發明將列舉以下之實施例說明。 朵一,本發明之一具體實施例,第2A圖至第2G圖係為一發 返體封裝構造在製造過程中之截面圖,請參閱第2AWith reference to the drawings, the present invention will be illustrated by the following embodiments. Douyi, a specific embodiment of the present invention, FIG. 2A to FIG. 2G are cross-sectional views of a round package structure during the manufacturing process, please refer to FIG. 2A
第9頁 1237411 -----------—_ 1 —. .,-... .—. . rn— in 五、發明說明(4) ' ——^— ,·.—〜 圖丄眉,,提供一晶片載體2】〇,其係具有一表面2 1 1 — 有複數個載體單元2 1 2,該晶片載體2 1 〇係可為_—導線 ^或一電路基版。在本實施例中,該晶片載體21〇係為— 電路基板(如第3圖所示)。之後,再請參閱第⑽圖,設置 複數個―發光二極體晶片22〇於該晶片載體21〇之該上表面 1 母 ®光一極體晶片2 2 0係位於對應之載體單元 21 2、,該些發光二極體晶片220之設置方式係可為覆晶接合 或X打、、東方式電性連接至該晶片載體2 1 〇。在本實施例 中’该發光二極體晶片2 2〇係藉由複數個凸塊22 1與該晶片 載體2 1 0電性連接。 、明參閱第2C圖’形成一透光性模封膠體230於該晶丨彳❿ 載體2 1 0之该表面2 1 1,該模封膠體2 3 〇係密封該些發光二 極體晶片2 2 〇,較佳地,該透光性模封膠體2 3 0係包含有螢、 光粉末’以利用螢光粉末吸收並轉變來自於該些發光二極 體曰曰片2 2 0之光線,而發出不同波長之光線。接著,再請、 參閱第2D圖,於該透光性模封膠體23〇形成複數個溝槽231 (groove),以使該些溝槽231與該晶片載體21〇構成複數個 反射件容置空間B。 請參閱第2E圖,在本實施例中,可形成一黏膠層2 5 〇 於該晶片載體2 1 〇,該黏膠層2 5 0係可為薄型黏膠膜或b階毫^ 膠層。請在參閱第2F圖,設置複數個金屬反射件26 0於該 些反射件谷置空間B,該些金屬反射件2 6 0係藉由該黏膠層 250黏著於該晶片載體21 0。較佳地,該黏膠層2 50係具有 介電性且可為一種導熱膠,以傳導由該發光二極體晶片Page 9 1237411 -------------_ 1 —.., -... .—.. Rn— in V. Description of the invention (4) '—— ^ —, · .— ~ As shown in the figure, a wafer carrier 2] 0 is provided, which has a surface 2 1 1-having a plurality of carrier units 2 1 2. The wafer carrier 2 1 0 may be a lead wire or a circuit board. In this embodiment, the wafer carrier 21 is a circuit board (as shown in FIG. 3). Then, referring to the second figure, a plurality of-light emitting diode wafers 22 are placed on the upper surface of the wafer carrier 21, and a mother® photodiode wafer 2 2 0 is located on the corresponding carrier unit 21 2 ,, The light-emitting diode wafers 220 may be arranged in a flip-chip bonding method or an X-type bonding method, and may be electrically connected to the chip carrier 21 in an eastern manner. In this embodiment, the light-emitting diode wafer 2 2 0 is electrically connected to the wafer carrier 2 1 0 through a plurality of bumps 22 1. 2. Refer to FIG. 2C for reference to form a light-transmitting mold-molding colloid 230 on the surface 2 1 1 of the carrier 2 1 0, and the mold-molding colloid 2 3 0 seals the light-emitting diode wafers 2 20, preferably, the light-transmitting mold-molding colloid 230 contains fluorescent powder and light powder to use the fluorescent powder to absorb and transform light from the light-emitting diode chips 2 2 0, And emit light of different wavelengths. Then, referring to FIG. 2D, a plurality of grooves 231 are formed in the light-transmitting molding compound 23, so that the grooves 231 and the wafer carrier 21 form a plurality of reflecting members. Space B. Please refer to FIG. 2E. In this embodiment, an adhesive layer 2 5 0 can be formed on the wafer carrier 2 1 0. The adhesive layer 2 5 0 can be a thin adhesive film or a b-level ^ adhesive layer . Referring to FIG. 2F, a plurality of metal reflecting members 26 0 are disposed in the reflecting member valley spaces B. The metal reflecting members 26 0 are adhered to the wafer carrier 21 0 through the adhesive layer 250. Preferably, the adhesive layer 2 50 is dielectric and may be a thermally conductive adhesive to conduct the light emitting diode chip.
第10頁 1237411 五、發明說明(5) ^ 一 〜―〜 2 2 0發出之熱量經由該晶片載體2】〇到該些金屬反射件 260,達到較佳散熱。每一金屬反射件26〇係位於對應之载 體單元2 1 2上並圍繞對應之該些發光二極,^τ 地,該金屬反射件260係具有—反射面261 =該反射面k 261係不黏接該透光性模封膠體23〇。在本實施例中,該此 金屬反射件2 60係可由單一金屬板以沖壓或蝕刻製作而— 成’或者’預先利用金屬粉末冶金鑄造成形,再鍍上—反 射膜。 /請參閱第2G圖,較佳地,在設置該些金屬反射件26() 之後’設置複數個例如凸透鏡之鏡片27〇( lens)於該些金 屬反射件260上’以修正該些發光二極體晶片22 〇之光線方❿ 向趨向平行’在本實施例中,在設置該些鏡片2 7〇後,再 切割該晶片載體2 1 0,以構成複數個發光二極體封裝構造 2〇〇。或者,在另一實施例中係可在切割該晶片載體21 〇 一 後再5又置孩些鏡片2 7 0,以構成複數個發光二極體封裝· 構0 0。較佳地,该些鏡片2 7〇係經過光學鍵膜處理, 達到聚焦之功能。 一請參閱第2G圖,係為依上述封裝製程所形成之一發 一極體封裝構造200,所包含之一載體單元212係可為一Page 10 1237411 V. Description of the invention (5) ^ 1 ~~~ 2 2 0 The heat emitted from the wafer carrier 2] to the metal reflectors 260 to achieve better heat dissipation. Each metal reflector 26 is located on the corresponding carrier unit 2 1 2 and surrounds the corresponding light emitting diodes. ^ Τ ground, the metal reflector 260 has-a reflecting surface 261 = the reflecting surface k 261 The light-transmitting molding compound 23 is not adhered. In this embodiment, the metal reflecting member 2 60 can be made from a single metal plate by stamping or etching—or ”formed by metal powder metallurgy casting in advance, and then plated with a reflective film. / Please refer to FIG. 2G, preferably, after the metal reflection members 26 () are disposed, 'a plurality of lenses 27 such as a convex lens are disposed on the metal reflection members 260' to correct the light emission In the present embodiment, after the lenses 2 70 are set, the wafer carrier 2 1 10 is cut to form a plurality of light emitting diode packaging structures 2 0. 〇. Alternatively, in another embodiment, after the wafer carrier 21 is cut, a plurality of lenses 2 7 0 may be placed again to form a plurality of light emitting diode packages. Preferably, the lenses 270 are processed by an optical key film to achieve the function of focusing. Please refer to FIG. 2G, which is a polar package structure 200 formed according to the above-mentioned packaging process. A carrier unit 212 included in the package may be a
線Ϊ或一電路基板,一發光二極體晶片220係設置於該菊 體單元212,一透光性模封膠體23〇係形成於該載體單 ,以密封該發光性二極體晶片22〇,該透光性模 係包含有螢光粉末,以發出不同波長之光線1月: 反射件260係設置於該載體單元212上並圍繞對應之該些屬A coil or a circuit substrate, a light-emitting diode wafer 220 is disposed on the chrysanthemum unit 212, and a light-transmitting molding compound 23 is formed on the carrier sheet to seal the light-emitting diode wafer 22. The translucent mold system contains fluorescent powder to emit light of different wavelengths. January: a reflector 260 is disposed on the carrier unit 212 and surrounds the corresponding genera
1237411 五、發明說明(6) 光二極體晶片220。在本實施例中,-~鏡片270係設置於該 金屬反射件2 6 0上。 依據本發明之發光二極體晶片封裝製程,在設置該些 金屬反射件2 6 0之前,係在該晶片載體2 1 0之該表面2 11形 成該透光性模封膠體2 3 0,因此該些金屬反射件2 6 0之該反 射面26 1可不被該透光性模封膠體23 0黏貼,其係可避免該 些反射面2 6 1與該模封膠體2 3 〇之間發生不規則之龜裂及分 層損壞(del ami nat ion)之情況,而影響發光二極體之亮度 及品夤,並且该些金屬反射件2 β 〇係用以反射光線集中該 些發光二極體晶片220產生之光線並具有散熱之功能,以 適用在封裝高亮度之發光二極體 光二極體晶片22 0所產生的熱能 晶片2 2 0,並導出該些發 為準 本發明之保護蔚圍a,任何熟知此項:;:後請專利範圍所界定者. 圍内所作之任何變化與:改:= : = 神和範 粍圍 第12頁 1237411 圖式簡單說明 【圖式簡單說明】 第1 A圖至第1 D圖:習知發光二極體晶片封裝製程中一晶片 載體之截面示意圖; 第2 A圖至第2 G圖:依據本發明之一具體實施例,在一發光 · 二極體晶片封裝製程中一晶片載體之截面示意圖;及 第 3 圖:依據本發明之一具體實施例,該發光二 極體封裝構造之晶片載體之上視圖。 元件符號簡單說明: 1 ◦ 0發光二極體封裝構造 11 0 晶片載體 111 表面 1 2 2 開孔 120 金屬反射件 121 反射面 130發光二極體晶片 140 透光性封膠體 200發光二極體封裝構造 21 0 晶片載體 211 表面 212 載體單元 2 2 1 凸塊 220發光二極體晶片 230模封膠體 231溝槽 2 5 0 黏膠層 260 金屬反射件 261 反射面 270鏡片 A 晶片容置空間B 反射件容置空間1237411 V. Description of the invention (6) Photodiode wafer 220. In this embodiment, the lens 270 is disposed on the metal reflecting member 260. According to the light-emitting diode chip packaging process of the present invention, before the metal reflectors 2 60 are provided, the light-transmitting molding compound 2 3 0 is formed on the surface 2 11 of the wafer carrier 2 1 0, so The reflective surface 26 1 of the metallic reflective members 2 6 0 may not be adhered by the light-transmitting molding compound 23 0, which can avoid the occurrence of inconsistency between the reflective surfaces 2 6 1 and the molding compound 2 3 〇 Regular cracks and del ami nat ion conditions affect the brightness and quality of light-emitting diodes, and the metal reflectors 2 β 〇 are used to reflect light to concentrate the light-emitting diodes. The light generated by the chip 220 has a heat dissipation function, and is suitable for packaging the thermal energy chip 2 2 0 generated by the high-brightness light-emitting diode light-emitting diode chip 22 0, and derives these emissions as the protection of the present invention. a, Anyone who is familiar with this:;: Please define the scope of the patent later. Any changes made within the scope and: change: =: = Shenhe Fan Yewei Page 12 1237411 Simple illustration of the diagram [Simplified illustration of the diagram] Section 1 Figure A to Figure 1D: In the conventional light-emitting diode chip packaging process Sectional schematic diagram of a wafer carrier; Figures 2A to 2G: Sectional schematic diagrams of a wafer carrier in a light-emitting diode packaging process according to a specific embodiment of the present invention; and Figure 3: According to this A specific embodiment of the invention, a top view of a wafer carrier of the light emitting diode package structure. Brief description of the component symbols: 1 ◦ 0 Light-emitting diode package structure 11 0 Wafer carrier 111 Surface 1 2 2 Opening 120 Metal reflector 121 Reflective surface 130 Light-emitting diode wafer 140 Translucent encapsulant 200 Light-emitting diode package Structure 21 0 Wafer carrier 211 Surface 212 Carrier unit 2 2 1 Bump 220 Light-emitting diode wafer 230 Molded gel 231 Groove 2 5 0 Adhesive layer 260 Metal reflector 261 Reflective surface 270 Lens A Wafer receiving space B Reflection Accommodating space
第13頁Page 13
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US20120037886A1 (en) | 2007-11-13 | 2012-02-16 | Epistar Corporation | Light-emitting diode device |
KR101798884B1 (en) | 2011-05-18 | 2017-11-17 | 삼성전자주식회사 | Light emitting device assembly and head light including the same |
TWI476877B (en) * | 2012-10-15 | 2015-03-11 | Win Semiconductors Corp | Structure and method for air cavity packaging |
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